9 Pages, 90 KB, Original
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
9 Pages, 90 KB, Original
8 Pages, 165 KB, Scan
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
10 Pages, 91 KB, Original
9 Pages, 90 KB, Original
Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R
9 Pages, 90 KB, Original
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
9 Pages, 90 KB, Original
MOSFET N-CH RF 12V 30MA SOT-143 - BF 998R E6327
7 Pages, 75 KB, Original
1 Pages, 30 KB, Scan
Shortform Data and Cross References (Misc Datasheets)
1 Pages, 42 KB, Original
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
1 Pages, 42 KB, Original
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
15 Pages, 296 KB, Original
MOSFET NCH DUAL GATE 12V SOT143B - BF998,215
15 Pages, 296 KB, Original
MOSFET NCH DUAL GATE 12V SOT143B - BF998,215
15 Pages, 296 KB, Original
15 Pages, 296 KB, Original
MOSFET N-CH 12V 30MA SOT143R - BF998R,215
15 Pages, 296 KB, Original
15 Pages, 296 KB, Original
12 Pages, 77 KB, Original
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS
12 Pages, 77 KB, Original
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS
9 Pages, 308 KB, Scan
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
9 Pages, 308 KB, Scan
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
13 Pages, 77 KB, Original
MOSFET N-CH 12V 30MA SOT343R - BF998WR,115
13 Pages, 77 KB, Original
13 Pages, 270 KB, Original
Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) CMPAK T/R
12 Pages, 70 KB, Original
N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 22 mS
9 Pages, 219 KB, Original
9 Pages, 220 KB, Original
12 Pages, 77 KB, Original
12 Pages, 77 KB, Original
8 Pages, 179 KB, Original
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
2 Pages, 34 KB, Original
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
2 Pages, 31 KB, Original
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
8 Pages, 220 KB, Original
9 Pages, 109 KB, Original
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
8 Pages, 220 KB, Original
8 Pages, 220 KB, Original
8 Pages, 220 KB, Original
8 Pages, 220 KB, Original
9 Pages, 109 KB, Original
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
9 Pages, 109 KB, Original
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
8 Pages, 220 KB, Original
9 Pages, 109 KB, Original
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode