BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998W MRs Pin Configuration 1=D 2=S 3=G1 Package 4=G2 SOT343 Maximum Ratings Parameter Symbol Drain-source voltage VDS 12 V Continuos drain current ID 30 mA Gate 1/gate 2 peak source current IG1/2SM 10 Total power dissipation, TS = 94 C Ptot 200 Storage temperature Tstg 55 ... 150 Channel temperature Tch 150 Value Unit mW C Thermal Resistance Channel - soldering point1) Rthchs 280 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-10-2001 BF998W Electrical Characteristics at TA = 25 C; unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - Gate 1 source breakdown voltage V(BR)G1SS 8 - 12 IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage V(BR)G2SS 8 - 12 IG1SS - - 50 IG2SS - - 50 IDSS 2 - 18 mA -VG1S(p) - - 2.5 V -VG2S(p) - - 2 DC characteristics Drain-source breakdown voltage V ID = 10 A, VG1S = -4 V, VG2S = -4 V IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate 1 source leakage current nA VG1S = 8 V, VG2S = VDS = 0 Gate 2 source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 0 , ID = 20 A Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 A 2 Aug-10-2001 BF998W Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs - 24 - mS Cg1ss - 2.1 2.5 pF Cg2ss - 1.2 - Cdg1 - 25 - fF Cdss - 1.1 - pF Gps - 28 - dB Gps - 20 - F - 0.6 - F - 1 - 40 - - AC characteristics Forward transconductance VDS = 8 V, ID = 10 mA, VG2S = 4 V Gate 1 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Feedback capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 200 MHz Power gain VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 200 MHz Noise figure VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gps Gain control range VDS = 8 V, VG2S = 4 ... -2V, f = 800 MHz 3 Aug-10-2001 BF998W Output characteristics ID = f (VDS ) Total power dissipation Ptot = f(TS) BF 998 25 220 mA D 180 EHT07333 mA VG1S = 0.5 V 20 0.4 V 15 0.2 V P tot 160 140 120 100 0V 10 80 60 -0.2 V 5 40 -0.4 V 20 -0.6 V 0 0 15 30 45 60 75 90 105 120 C 0 150 0 5 10 V TS V DS Gate 1 forward transconductance Gate 1 forward transconductance gfs1 = f (VG1S ) g fs1 = f (V G2S) 30 BF 998 EHT07293 VG2S = 4 V mS g fs1 15 30 BF 998 EHT07294 mS VG1S = 0.25 V g fs1 0V 20 20 -0.25 V 3V 10 10 2V 1V 0 0V -1 0 1 V 0 2 VG1S -1 0 1 2 3 V 4 VG2S 4 Aug-10-2001 BF998W Gate 1 forward transconductance Gate 1 input capacitance Cg1ss = f (VG1S) gfs1 = f (ID ) 30 g fs1 BF 998 EHT07295 mS VG2S = 4 V BF 998 2.5 C g1ss EHT07296 pF 2.0 3V 2V 20 1.5 1.0 10 0.5 1V 0.5 V 0 0V 0.0 5 0 10 15 mA 20 -3 -2 -1 0 D BF 998 1 VG1S Gate 2 input capacitance Cg2ss = f (VG2S) 2.0 V Output capacitance C dss = f (V DS) EHT07297 3 pF BF 998 EHT07298 pF Cg2ss Cdss 1.5 2 1.0 1 0.5 0.0 -2 -1 0 1 2 3 V 0 4 0 5 10 V 15 V DS VG2S 5 Aug-10-2001 BF998W Drain current ID = f (VG1S ) Power gain Gps = f (VG2S) f = 200 MHz BF 998 30 EHT07299 VG2S = 4 V 3V 2V D mA 30 BF 998 EHT07300 dB Gps 20 10 1V 20 0 -10 10 -20 0V 0 -1 0 1 V -30 -40 2 -1 0 1 2 3 V G1S Power gain Gps = f (VG2S) f = 200 MHz f = 800 MHZ F BF 998 4 VG2S Noise figure F = f (VG2S ) 5 V EHT07301 30 BF 998 EHT07302 dB dB G ps 20 4 10 3 0 -10 2 -20 1 -30 0 0 1 2 3 V -40 4 V G2S -1 0 1 2 3 V 4 VG2S 6 Aug-10-2001 BF998W Noise figure F = f (VG2S ) Gate 1 input admittance y11s f = 800 MHz (common source) BF 998 5 F EHT07303 14 BF 998 EHT07304 mS dB b 11s f = 1200 MHz 12 1100 MHz 4 1000 MHz 10 900 MHz 800 MHz 3 8 700 MHz 600 MHz 6 2 500 MHz 400 MHz 4 300 MHz 1 2 200 MHz 100 MHz 0 1 0 2 3 V 0 4 0 1 2 3 Gate 1 forward transfer admittance y21s Output admittance y 22s (common source) (common-source) b 21s BF 998 EHT07305 8 100 MHz mS 4 g 11s V G2S 0 mS b 22s 200 MHz BF 998 EHT07306 mS f = 1200 MHz 1100 MHz -5 300 MHz 6 1000 MHz 400 MHz 900 MHz 500 MHz -10 800 MHz 600 MHz 700 MHz 4 700 MHz 600 MHz 800 MHz -15 500 MHz 900 MHz 400 MHz 1000 MHz -20 2 1100 MHz 300 MHz 200 MHz f = 1200 MHz 100 MHz -25 10 15 20 mS 0 25 g 21s 7 0 0.1 0.2 0.3 0.4 mS 0.5 g 22s Aug-10-2001