BF998WRTR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1995 Apr 25

File under Discrete Semiconductors, SC07

1997 Sep 05

DISCRETE SEMICONDUCTORS

BF998WR

N-channel dual-gate MOS-FET

1997 Sep 05 2

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

FEATURES

•High forward transfer admittance

•Short channel transistor with high forward transfer

admittance to input capacitance ratio

•Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

•VHF and UHF applications with 12 V supply voltage,

such as television tuners and professional

communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

microminiature SOT343R package with source and

substrate interconnected. The transistor is protected

against excessive input voltage surges by integrated

back-to-back diodes between gates and source.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN SYMBOL DESCRIPTION

1 s, b source

2 d drain

gate 2

gate 1

Fig.1 Simplified outline (SOT343R) and symbol.

Marking code: MB.

MAM198

Top view

s,b

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VDS drain-source voltage −−12 V

IDdrain current −−30 mA

Ptot total power dissipation −−300 mW

Tjoperating junction temperature −−150 °C

yfsforward transfer admittance −24 −mS

Cig1-s input capacitance at gate 1 −2.1 −pF

Crs reverse transfer capacitance f=1MHz −25 −fF

F noise ﬁgure f = 800 MHz −1−dB

1997 Sep 05 3

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS drain-source voltage −12 V

IDdrain current −30 mA

IG1 gate 1 current −±10 mA

IG2 gate 2 current −±10 mA

Ptot total power dissipation up to Tamb =45°C; see Fig.2; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −+150 °C

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

MLD154

150

400

200

300

100

Ptot

(mW)

T ( C)

amb o

1997 Sep 05 4

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board.

2. Ts is the temperature at the soldering point of the source lead.

STATIC CHARACTERISTICS

Tj=25°C; unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25°C; VG2-S = 4 V; ID= 10 mA; VDS = 8 V; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 350 K/W

Rth j-s thermal resistance from junction to soldering point note 2; Ts=90°C 200 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V

DS = 0; IG1-S = 10 mA 6 20 V

V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V

DS = 0; IG2-S = 10 mA 6 20 V

V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; V

DS =8V; I

D=20µA−−2.5 V

V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS =8V; I

D=20µA−−2V

DSS drain-source current VG2-S =4V; V

DS =8V; V

G1-S =0 2 18 mA

G1-SS gate 1 cut-off current VG2-S =V

DS = 0; VG1-S =5V −50 nA

IG2-SS gate 2 cut-off current VG1-S =V

DS = 0; VG2-S =5V −50 nA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

yfsforward transfer admittance pulsed; Tj=25°C2225−mS

Cig1-s input capacitance at gate 1 f = 1 MHz −2.1 2.5 pF

Cig2-s input capacitance at gate 2 f = 1 MHz −1.2 −pF

Cos drain-source capacitance f = 1 MHz −1.05 −pF

Crs reverse transfer capacitance f = 1 MHz −25 −fF

F noise ﬁgure f = 200 MHz; GS= 2 mS; BS=B

Sopt −0.6 −dB

f = 800 MHz; GS= 3.3 mS; BS=B

Sopt −1−dB

1997 Sep 05 5

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

Fig.3 Transfer characteristics; typical values.

VDS =8V.

amb =25°C.

011

MGC471

(mA)

V (V)

G1 S

V = 4 V 3 V

2 V

1 V

0 V

G2 S

Fig.4 Output characteristics; typical values.

VG2-S =4V.

amb =25°C.

0210

MGC470

468

(mA)

V (V)

0.4 V

0.3 V

0.2 V

0.1 V

−0.1 V

0 V

V =

G1 S

−0.2 V

−0.3 V

−0.4 V

−0.5 V

VDS = 8 V; VG2 = 4 V; Tamb =25°C.

Fig.5 Drain current as a function of gate 1 voltage;

typical values.

−1600 400

MGC472

−1200 −800 −400 0

max typ

min

(mS)

V (mV)

Fig.6 Forward transfer admittance as a function

of drain current; typical values.

VDS = 8 V; Tamb =25°C.

020

MGC473

4 8 12 16

yfs

(mS)

I (mA)

V = 0 V

G2 − S0.5 V

4 V

3 V

2 V

1 V

1997 Sep 05 6

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

Fig.7 Forward transfer admittance as a function

of gate 1 voltage; typical values.

VDS = 8 V; Tamb =25°C.

−11

MGC474

0V (V)

G1-S

yfs

(mS)

3 V

2 V

1 V

0 V

V = 4 V

G2 S

Fig.8 Output capacitance as a function of

drain-source voltage; typical values.

VG2-S = 4 V; f = 1 MHz; Tamb =25°C.

414

1.5

1.0

1.1

MGC475

1.2

1.3

1.4

6 8 10 12VDS(V)

Cos

(pF)

12 mA

10 mA

8 mA

ID =

Fig.9 Gate 1 input capacitance as a function of

gate 1-source voltage; typical values.

VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25°C.

−2.4 −1.6 −0.8 0.8

2.4

1.4

2.2

MGC476

2.0

1.8

1.6

Cis

(pF)

V (mV)

G1-S

Fig.10 Gate 1 input capacitance as a function of

gate 2-source voltage; typical values.

VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25°C.

642 −2

2.4

2.3

2.1

2.0

2.2

MGC477

Cis

(pF)

V (V)

G2-S

1997 Sep 05 7

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

Fig.11 Input admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S =4V.

D= 10 mA; Tamb =25°C.

103

MGC466

102

10 2

10 1

yis

(mS)

f (MHz)

bis

gis

VDS = 8 V; VG2-S =4V.

D= 10 mA; Tamb =25°C.

Fig.12 Reverse transfer admittance and phase as

a function of frequency; typical values.

103

MGC467

102

103

102

yrs

103

(µS)

f (MHz)

yrs

(deg)

Fig.13 Forward transfer admittance and phase as

a function of frequency; typical values.

VDS = 8 V; VG2-S =4V.

D= 10 mA; Tamb =25°C.

103

MGC468

102

yfs

(mS) yfs

f (MHz)

(deg)

Fig.14 Output admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S =4V.

D= 10 mA; Tamb =25°C.

103

MGC469

102

10 1

10 2

yos

(mS)

f (MHz)

bos

gos

1997 Sep 05 8

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

Fig.15 Gain control testcircuit at f = 200 MHz.

VDD = 12 V; GS= 2 mS; GL= 0.5 mS.

L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.

L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.

Tapped at approximately half a turn from the cold side, to adjust GL= 0.5 mS. C1 adjusted for GS= 2 mS.

VAGC

1 nF1 nF

50 Ω

input

50 Ω

input

1 nF

20 µH

47 µF

1 nF 1 nF

1 nF

kΩ

1.8

kΩ

360

Ω

140 kΩ

1 nF

VDD

15 pF 10 pF

100

kΩ

330

kΩ

Vtun

BB405

5.5 pF

330

kΩ

BB405

input Vtun

output

MGC481

1997 Sep 05 9

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

VDD = 12 V; GS= 3.3 mS; GL= 1 mS.

L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.

L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.

L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.

Fig.16 Gain control test circuit at f = 800 MHz.

VAGC

1 nF

50 Ω

input

50 Ω

input

1 nF

270

kΩ

360

Ω

1.8

kΩ

140

kΩ

100 kΩ

VDD

1 nF

MGC480

VDD

1 nF

2-18 pF C2

0.5-3.5 pF

4-40 pF

Fig.17 Automatic gain control characteristics

measured in circuit of Fig.15.

VDD = 12 V; f = 200 MHz; Tamb =25°C.

010

−50

−40

MGC479

−30

−20

−10

2468

DSS=

max

typ

min

∆Gtr

(dB)

VAGC(V)

VDD = 12 V; f = 800 MHz; Tamb =25°C.

Fig.18 Automatic gain control characteristics

measured in circuit of Fig.16.

010

−50

−40

MGC478

−30

−20

−10

2468

DSS=

max

typ

min

∆Gtr

(dB)

VAGC(V)

1997 Sep 05 10

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

PACKAGE OUTLINE

Fig.19 SOT343R.

Dimensions in mm.

handbook, full pagewidth

0.3

0.1

0.25

0.10

0.2

0.1

max

1.00

max

MSB367

1.4

1.2

2.2

1.8 B

1.35

1.15

0.4

0.2

2.2

2.0

0.7

0.5

1997 Sep 05 11

Philips Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF998WR

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Rua do Rocio 220, 5th floor, Suite 51,

04552-903 São Paulo, SÃO PAULO - SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 829 1849

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2686, Fax. +41 1 481 7730

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,

Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

Printed in The Netherlands 117067/00/02/pp12 Date of release: 1997 Sep 05 Document order number: 9397 750 02671