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Document Number 85011
Rev. 1.5, 24-Nov-04
VISHAY
BF998 / BF998R / BF998RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter Test condition Symbol Value Unit
Drain - source voltage VDS 12 V
Drain current ID30 mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM 10 mA
Gate 1/Gate 2 - source voltage ± VG1S/G2S 7V
Total power dissipation Tamb ≤ 60 °C Ptot 200 mW
Channel temperature TCh 150 °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Symbol Value Unit
Channel ambient 1) RthChA 450 K/W
Parameter Test condition Part Symbol Min Ty p. Max Unit
Drain - source breakdown
voltage
ID = 10 µA, - VG1S = - VG2S = 4 V V(BR)DS 12 V
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS 714V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 714V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0 ± IG1SS 50 nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 50 nA
Drain current VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/
BF998R/
BF998RW
IDSS 418mA
BF998A/
BF998RA/
BF998RAW
IDSS 4 10.5 mA
BF998B/
BF998RB/
BF998RBW
IDSS 9.5 18 mA
Gate 1 - source cut-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA- V
G1S(OFF) 1.0 2.0 V
Gate 2 - source cut-off voltage VDS = 8 V, VG1S = 0, ID = 20 µA- V
G2S(OFF) 0.6 1.0 V
Parameter Test condition Symbol Min Typ. Max Unit
Forward transadmittance |y21s|21 24 mS
Gate 1 input capacitance Cissg1 2.1 2.5 pF
Gate 2 input capacitance VG1S = 0, VG2S = 4 V Cissg2 1.1 pF
Feedback capacitance Crss 25 fF
Output capacitance Coss 1.05 pF