SIEMENS Silicon N Channel MOSFET Tetrode Features @ Short-channel transistor with high S/C quality factor @ For low-noise, gain-controlled input stages up to 1 GHz BF 998 54 Type | [Marking | OrderingCode =| Pin Configuration | Package") (tape and reel) ' 4: 2 3 4 BF998 MO 062702-F1128 S| O |G | Gi | SOT 149 Maximum Ratings Parameter 2 tts | Symbol Values Unit Drain-source voltage ; _ ] Vos | 12 Vv Drain current | fo 30 mA Gate 1/gate 2 peak source current + Iovesm 10 Total power dissipation, 7s <76 c Prot 200 i mw Storage temperature range - Tstg [- 55 w+ 150 C Channel temperature | Ton 150 | Thermal Resistance Junction - soldering point a Rivus | < 370 KAW 1) For detailed information see chapter Package Outlines. Semiconductor Group 229 04.96SIEMENS Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter DC Characteristics Drain-source breakdown voltage fo =10pA, Fos =- oes =4V Gate 1-source breakdown voltage tiais = 10 mA, Fees = Hos=0 Gate 2-source breakdown voltage tiees = 10 MA, eis = Fos=0 Gate 1-source leakage current +os = 5 V, Kees = Fos =0 Gate 2-source leakage current + Foes = 5 V, bars = Fos= O Drain current ios = 8V, Vos = 0, Faas=4V Gate 1-source pinch-off voltage _ Vos = BV, Fees = 4 V, lo= 20uA Gate 2-source pinch-off voltage Mos = BV, Vos = 0, f= 20 uA Semiconductor Group TSymbol | Values | Unit ; min ltyp. 'max. - Vier; 0s |) re _ Vy | heimaa hi 4 _ le Vencss |8 - 12 : | i | vies =O fe L + Ie2ss | - [50 | ioss | 2 f= Te [ma | Fo18ipi |- jo 25 | Vv _ Posie! i , - 3 7 230SIEMENS BF 998 Electrical Characteristics at Ta = 25 'C, unless otherwise specified. Parameter 'Symbol| = Values_si| Unit + TO _min. [typ. "max. oe oe mat AC Characteristics Forwardtransconductance = a ti(its:(S;*i:SCt*d - fms Vos = 8V, fn = 10 MA, Vaes = 4 V | | | f=1kHz | | Gate 1 input capacitance | Caiss | 2.1 2 - Tee Vos = BV, fo = 10 MA, Mees = 4 V f= 1 MHz / | | Gate 2 input capacitance oe | C3258. ~- 42 9- | hos = 8 V, Jo = 10 MA, Fors = 4V : | | | {= 1 MHz | | Reverse transfer capacitance Cag | - 25 j- if Kos = 8 V, lo = 10 MA, Io2s = 4 V | | | | {= 1 MHz | L So ee | __ Output capacitance Vos = 8V, lo = 10MA, Fors = 4 V | f= 1 MHz --__ 4-14 | _ _ Power gain (test circuit 1) Vos = 8 V, fo = 10 MA, f= 200 MHz, | Ga =2mS, G.=0.5 mS, Fas =4V Power gain | Gps i= (test circuit 2) vos = 8 V, fo = 10 mA, f= 800 MHz, | Go=3.3 mS, G.=1mMS, ees =4V Lo Noise figure lf - (06 |- dB (test circuit 1) Fos = 8 V, lo = 10 mA, f= 200 MHz, | | | | Go=2m5, G=0.5 mS, Vers =4 V [ | Noise figure iF - 1 - | (test circuit 2) Mos = 8 V, In = 10 mA, f = 800 MHz, | Go =3.3 mS, Ge=1 mS, Vez =4V | Control range AGps 40 (test circuit 2) | | Vos = BV, Faas =4...-2V | | = 800 MHz | ; ean po Lo Semiconductor Group 231SIEMENS BF 998 Total power dissipation Pic = f (Ta) 300 7 EHTO7233 Pp 1 mW 200 Lt 100 _ \\ 14 Xt LLELETETIR 0 50 foo =c150 _ Toil, Gate 1 forward transconductance giss = f (Vars) Vos = 8 V, loss = 10 mA, f= 1 kHz BF 998 7293 30 6 8B. into Hs | | | Semiconductor Group Output characteristics /p = f (Vos) Vass=4V uy oe o Le i aoa - in oe eto L, ee me 2 Li EXTQI233 i Jon ane 1 Gate 1 forward transconductance gtr = f (Vars) Vos = 8 V, Joss = 10 MA, f= 1 kHz S51 232 ____EWTO7294 |SIEMENS BF 998 Gate 1 forward transconductance gts = f (Io) Vos = 8 V, loss = 10 mA, f= 1 kHz 30 BF 998 EHTO7295 Vong =4V Fat as cas 3V 2V 20 0 3 10 15. mA 20 wtp Gate 2 input capacitance C gs: = f (Vazs) Veis = OV, Vos =8V loss = 10 MA, f = 1 MHz GF 998 EHTOT297 2.0 g?ss pF Semiconductor Group Gate 1 input capacitance Coiss = f (Vais) Voes = 4 V, Vos =8 V, loss = 10 mA, f=1MHz BF 998 cHTO7Za 2.5, _ eHTO729 | pot 2G Cots prs - | 4 a -4 4 2.0 OS f am Hers Output capacitance Cass = f (Vos) Vois = OV, Vass =4V loss = 10 mA, f= 1 MHz 3 Mo 07298 Cass | | ; : i Pry | , | peent ra | ~ tT : | SK : We Pa ' t- : 6 L 5 Ly y 15 wm Vos 233Semiconductor Group 234 SIEMENS BF 998 Drain current Jo = f (Vais} Power gain Gps = f (Vazs) Vos=8V Vos = 8 V, Vers = 0, foss = 10 mA, f= 200 MHz (see test circuit 1) 30 BF 998 30 3F 998 : EHTO7300 ly Li Gy BP y Foe oer pony bom bowl [fa tb | | pt te a lo ; oe ee Ct 201 oe Lode _ fio jt ~ 1 ope pore | 19 ppd i [| =: 10. - . m4 Poo I! 720 | a wd i : | [. | -30 | | | | . : . : | oF 0 i 2 3 Vv 4 m Vers ~ me Voag Noise figure F = f (Vas) Power gain Gps = f (Vazs) Vos = 8 V, Vais = 0, /oss = 10 MA, Vos = 8 V, Vais=0, foss = 10 mA, f= 200 MHz (see test circuit 1) f= 800 MHz (see test circuit 2) 5 r 998 we pp alate 30 BE 996 oo, . _. ere | . : F gp 6,, 4 ' 4 { 4p fe | | | | {| fos | || Lowe oe ol 3.0Y 4 Vo4 m Vos m HersSIEMENS BF 998 Noise figure F = f (Vazs) Gate 1 input admittance yi. Vos = BV, Vais = 0, Joss = 10 mA, Vos = 8 V, Vazs=4V, Vais = 0, f= 800 MHz (see test circuit 2) loss = 10 mA (common-source) 5 c 98 EHTO7 393 1g ee poe Fogg - | by | * -1200Mli2 4 | 4 \2)- so pee te [- ; "tue / 4 | | ' ' | | - . 10: | | | ; | 3 co 8. | I | | ma bk. : t . pot 2 . | | | oe | 4) ; | 1 ae 7 TT ron ob a r | 2 | ee . | | oe | : i a 9% 9 ms 4 om Neos ron. Gate 1 forward transfer admittance y 2:3 Output admittance y 22 Vos =8V, Vass =4V, Vais=0 Vos =8V, Voos=4V, Vais=0 loss = 10 MA (common-source) loss = 10 MA (common-source) EHTO7306 0.4 mS 0.5 ~ 9, Semiconductor Group 235SIEMENS BF 998 Test circuit 1 for power gain and noise figure f= 200 MHz, Go=2MS, Gi =0.5MS _ [4 me _ Output Spe | sorll \ C 60t inf . A Be ae f _8B515 88515 ! it A [zr (mh a Loe eo Mun EHMOFG22 Test circuit 2 for power gain and noise figure [= 800 MHz, Go = 3.3 mS, G=1mS oie Ch ia rN rN Yors Vos eHu07023 Semiconductor Group 236