BF998... Silicon N_Channel MOSFET Tetrode * Short-channel transistor with high S / C quality factor * For low-noise, gain-controlled input stage up to 1 GHz * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 SOT143 1=S 2=D 3=G2 4=G1 - - MOs BF998R SOT143R 1=D 2=S 3=G1 4=G2 - - MRs Maximum Ratings Parameter Symbol Drain-source voltage VDS 12 V Continuous drain current ID 30 mA Gate 1/ gate 2-source current IG1/2SM 10 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value Unit TS 76 C, BF998, BF998R C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2), BF998, BF998R Rthchs 370 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BF998... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - V (BR)G1SS 8 - 12 V (BR)G2SS 8 - 12 IG1SS - - 50 nA IG2SS - - 50 nA IDSS 5 9 15 mA -VG1S(p) - 0.8 2.5 V -VG2S(p) - 0.8 2 DC Characteristics Drain-source breakdown voltage V ID = 10 A, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 A Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 A 2 2007-04-20 BF998... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values AC Characteristics Unit min. typ. max. 20 24 - Cg1ss - 2.1 2.5 pF Cg2ss - 1.2 - pF Cdg1 - 25 - fF Cdss - 1.1 - pF (verified by random sampling) Forward transconductance gfs - VDS = 8 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Gate 2 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Feedback capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain Gp dB VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 28 - - 20 - VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure dB F VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 2.8 - - 1.8 - 40 50 - VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz G p Gain control range VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz 3 2007-04-20 BF998... Total power dissipation Ptot = (TS) BF998, BF998R Output characteristics ID = (V DS) VG2S = 4 V VG1S = Parameter 26 mA 220 mW 0.4V 22 180 20 0.2V 18 140 ID P tot 160 16 0V 120 14 100 12 -0.2V 10 80 8 60 -0.4V 6 40 4 20 0 0 2 15 30 45 60 75 90 105 120 C 0 0 150 2 4 6 8 V 10 TS Gate 1 forward transconductance Gate 1 forward transconductance g fs = (ID) VDS = 5V, VG2S = Parameter g fs1 = (VG1S) 26 mS 26 mS 4V 4V 22 22 20 20 2V 16 14 16 14 1V 12 12 10 10 8 8 6 6 4 4 0 0 2V 18 Gfs gfs 18 2 14 VDS 0V 1V 0V 2 4 8 12 16 mA 0 -1 24 ID -0.75 -0.5 -0.25 0 0.25 V 0.75 VG1S 4 2007-04-20 BF998... Drain current ID = (VG1S) Power gain Gps = (VG2S) VDS = 5V f = 45 MHz VG2S = Parameter 30 30 4V 2V dB 20 G ps mA ID 1V 20 15 15 10 10 0V 5 0 -1 5 -0.75 -0.5 -0.25 0 0.25 0.5 V 0 0 1 1 2 V VG1S 4 VG2S Noise figure F = (VG2S) Noise figure F = (VG2S) f = 45 MHz f = 800 MHz 10 5 dB dB 8 6 F F 7 3 5 4 2 3 2 1 1 0 0 1 2 V 0 0 4 VG2S 1 2 V 4 VG2S 5 2007-04-20 BF998... Power gain Gps = (VG2S) Gate 1 input capacitance Cg1ss = (VG1S) f = 800 MHz 20 2.6 pF dB Cg1ss G ps 2.2 10 5 2 1.8 1.6 0 1.4 -5 1.2 -10 0 1 V 2 1 -3 4 VG2S -2.6 -2.2 -1.8 -1.4 -1 -0.6 V 0.2 VG1S Output capacitance C dss = (VDS) 4 pF Cdss 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 V 12 VDS 6 2007-04-20 Package SOT143 BF998... 2 0.1 MAX. 10 MAX. 1 1 0.1 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 A 5 0...8 0.2 M A 0.25 M B 1.7 0.08...0.1 1.3 0.1 3 2.4 0.15 4 B 10 MAX. 2.9 0.1 1.9 0.15 MIN. Package Outline Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout (Example) RF s 56 Manufacturer Pin 1 2005, June Date code (YM) BFP181 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 7 2007-04-20 Package SOT143R BF998... Package Outline 2 0.2 0.08...0.15 A +0.1 0.8 -0.05 0.4 +0.1 -0.05 0... 8 1.7 0.25 10 MAX. 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1.9 4 1 0.1 0.15 MIN. 2.9 0.1 M 0.2 M A B Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 8 2007-04-20 BF998... Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-04-20