Power and Sensing
Selection Guide 2019
www.infineon.com/powerandsensing-selectionguide
EN
Dear Customer,
Today we communicate to everyone and everything.
Interaction is no longer limited to human-to-human,
but has been extended to human-to-machine and,
with the latest innovations, even further to machine-
to-machine communication.
As a leader in the semiconductor industry, Infineon is
oering a wide product range of world-class power,
sensor, and security technologies. Ultraprecise sensing
solutions, such as advanced 3D ToF imagers, MEMS
microphones or radar sensors, substitute human
senses in IoT devices, enabling them to react to their
surroundings. The next generations of GaN-based
products open up a new paradigm of ultimate eiciency
and reliability in power solutions that actuate sensing
and computing functions at the very core of intelligent
devices. Infineon’s portfolio also integrates cooler,
smaller and lighter audio amplifiers which enable
customers to create better sounding products and enjoy
exceptional audio performance of HMI-enabled speakers
and other audio products.
These technologies together enable energy-eicient,
secure, and seamless human-to-machine and machine-
to-machine interaction and bridge the link between
the real and the digital world. They also facilitate data
storage in smart cities, industries, buildings, and homes,
supporting the Internet of Intelligent Things.
The 2019 edition of the Power and Sensing Selection
Guide oers great solutions for your future success;
together, we will make life easier, safer, and greener.
尊敬的客户:
今天我们已步入互联时代，人与人、人与事的交互成为了现实。
科技发展日新月异，本来仅局限于人与人之间的交互，已经扩展
到人与机器之间，未来机器与机器的通信，也在最新技术的推
动下成形。
作为半导体行业的领导者，英飞凌旗下备有一系列的世界级电
源、传感器和安全技术。超精密的传感解决方案，如先进的3D
ToF成像仪、MEMS麦克风或雷达传感器，在物联网设备中发挥
人类感官的功能，对周围环境作出反应。下一代基于GaN的产
品，是智能设备核心传感和计算功能的动力，为极高效而可靠的
电源解决方案树立新标杆。英飞凌的产品组合还集成了更酷、更
小、更轻的音频放大器，使客户能够创造更好的音响产品，并享受
配备HMI的扬声器和其他音频产品的卓越音响表现。
上述技术结合应用，实现高效、安全、无缝的人机交互和机器对机
器的交互，给现实世界和数字世界之间架起了桥梁。它们还支持
智能物联网，促成智能城市、工业、建筑和家居的数据存储。
2019版的电力和传感选择指南的出色解决方案，为您指出未来
成功之道；让我们共同努力，使生活变得更轻松、更安全、更环保。
Andreas Urschitz,
Division President of
Power Management & Multimarket
电力管理和多市场部门总裁
Connectivity and linking the real to the digital
world is no longer a dream – it is a lived reality.
Future is something we create together to make
life easier, safer, and greener.
连接真实世界和数字世界不再是一个梦想，
而是活生生的现实。未来由我们共同创造，
让生活更轻松、更安全、更环保。
Andreas Urschitz,
Division President of
Power Management & Multimarket
电力管理和多市场部门总裁
Dear Customer,
Today we communicate to everyone and everything.
Interaction is no longer limited to human-to-human,
but has been extended to human-to-machine and,
with the latest innovations, even further to machine-
to-machine communication.
As a leader in the semiconductor industry, Infineon is
oering a wide product range of world-class power,
sensor, and security technologies. Ultraprecise sensing
solutions, such as advanced 3D ToF imagers, MEMS
microphones or radar sensors, substitute human
senses in IoT devices, enabling them to react to their
surroundings. The next generations of GaN-based
products open up a new paradigm of ultimate eiciency
and reliability in power solutions that actuate sensing
and computing functions at the very core of intelligent
devices. Infineon’s portfolio also integrates cooler,
smaller and lighter audio amplifiers which enable
customers to create better sounding products and enjoy
exceptional audio performance of HMI-enabled speakers
and other audio products.
These technologies together enable energy-eicient,
secure, and seamless human-to-machine and machine-
to-machine interaction and bridge the link between
the real and the digital world. They also facilitate data
storage in smart cities, industries, buildings, and homes,
supporting the Internet of Intelligent Things.
The 2019 edition of the Power and Sensing Selection
Guide oers great solutions for your future success;
together, we will make life easier, safer, and greener.
尊敬的客户:
今天我们已步入互联时代，人与人、人与事的交互成为了现实。
科技发展日新月异，本来仅局限于人与人之间的交互，已经扩展
到人与机器之间，未来机器与机器的通信，也在最新技术的推
动下成形。
作为半导体行业的领导者，英飞凌旗下备有一系列的世界级电
源、传感器和安全技术。超精密的传感解决方案，如先进的3D
ToF成像仪、MEMS麦克风或雷达传感器，在物联网设备中发挥
人类感官的功能，对周围环境作出反应。下一代基于GaN的产
品，是智能设备核心传感和计算功能的动力，为极高效而可靠的
电源解决方案树立新标杆。英飞凌的产品组合还集成了更酷、更
小、更轻的音频放大器，使客户能够创造更好的音响产品，并享受
配备HMI的扬声器和其他音频产品的卓越音响表现。
上述技术结合应用，实现高效、安全、无缝的人机交互和机器对机
器的交互，给现实世界和数字世界之间架起了桥梁。它们还支持
智能物联网，促成智能城市、工业、建筑和家居的数据存储。
2019版的电力和传感选择指南的出色解决方案，为您指出未来
成功之道；让我们共同努力，使生活变得更轻松、更安全、更环保。
Andreas Urschitz,
Division President of
Power Management & Multimarket
电力管理和多市场部门总裁
Connectivity and linking the real to the digital
world is no longer a dream – it is a lived reality.
Future is something we create together to make
life easier, safer, and greener.
连接真实世界和数字世界不再是一个梦想，
而是活生生的现实。未来由我们共同创造，
让生活更轻松、更安全、更环保。
Andreas Urschitz,
Division President of
Power Management & Multimarket
电力管理和多市场部门总裁
5
We make life easier, safer and greener – with technology that achieves more,
consumes less and is accessible to everyone.
From product thinking to system
understanding
Infineon enables e icient generation, transmission and conversion
of electrical energy
www.infineon.com/power
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
4
Applications 6
Battery powered applications 6
E-mobility 8
Audio solutions 12
DC-DC enterprise power solution for data processing 16
Industrial welding 20
LED lighting 22
Major home appliances 24
Air conditioning 24
Induction cooking 25
Multicopter 26
Smart home 28
Enabling secured communication for IoT 30
Robotics 31
SMPS 34
Laptop adapter 34
Mobile charger 36
PC power supply 37
TV power supply 38
Embedded power supply 41
Server power supply 42
Telecom power supply 44
DC EV charging 46
Uninterruptible power supply 50
Solar 55
Wireless charging 60
20-300V MOSFETs 66
500-950 V MOSFETs 96
Wide bandgap semiconductors 122
Discrete IGBTs 144
Power ICs 160
Gate driver ICs 224
Motor control ICs 252
Microcontrollers 254
Sensors 272
Packages 302
Contents
5
We make life easier, safer and greener – with technology that achieves more,
consumes less and is accessible to everyone.
From product thinking to system
understanding
Infineon enables e icient generation, transmission and conversion
of electrical energy
www.infineon.com/power
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications
XENSIV™ sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
7
Typical battery powered three-phase system – a one-stop-shop for battery powered drives
A complete set of components that ensure system-cost competitiveness and high performance solution
Why to choose Infineon as your partner for innovation in battery powered applications
www.infineon.com/motorcontrol
Current sensing
Current sensing
Gate driver ICs
EiceDRIVER™
200 V driver ICs
3-phase
inverter
OptiMOS™
HEXFET™/
StrongIRFET
IPM
USB,
XMC™
microcontroller
and
digital controller
and
iMOTION™
IRMCK099
M
Status
indication
LED drivers ≤ 60 V
User
interface
Power management
Battery management
CoolMOS™
OPTIGA™
OptiMOS™
HEXFET™/StrongIRFET™
Linear voltage/DC-DC
switching regulators
serial COM
& ethernet
CAN transceiver
Position sensing
Hall switches,
linear Hall,
angle, and
current sensors
Battery powered applications
Infineon product oering Customer benefits
Complete solutions – broad portfolio › Whatever design specification, Infineon has the answer in the comprehensive portfolio of products and solutions which you can
easily tailor to your needs
› Infineon oers solutions for power supplies, chargers, motor drives and sensors
Extended battery lifetime and
product life spans
› BiC MOSFETs e.g. OptiMOS™ and HEXFET™/StrongIRFET™ extend battery lifetime and reduce chances for control failure
› High reliability of Infineon components results in prolonged product lifespans
Productive capability › Oering LV FETs with SMD packaging improves the productive capability by automatic production, improves reliability and
reduces assembly cost
Overall system size and cost reduction › With Infineon‘s components you can reduce of overall system size and cost due to components occupying smallest area and
featuring compact design, both of which are required for highest power density and BOM savings thanks to lowest RDS(on)
Security, quality and safety › Trustworthy hardware-based security
› As a security market leader with a proven track record and outstanding partner network for embedded security, Infineon provides
highest quality standards and a safety certified development process
Authentication › OPTIGA™ Trust enables authentication of components connected to the system (e.g., battery pack recognition to avoid second
party batteries etc.)
Fast time-to-market › Faster time-to-market is enabled by providing evaluation and demo boards for fast prototyping, and simulations, documentation,
and system support that reduce development time and cost
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet, the previous CoolMOS™ CE and P6 series are the preferred series
Infineon product oering Consumer robotics Home and professional applications Light electric vehicles
Supply voltage 12-48 V 10.8-56 V 24-144 V
OptiMOS™ and
HEXFET™/StrongIRFET™
power MOSFETs
Voltage 25-200 V 20-100 V 60-300 V
Package SuperS08, PQFN 3x3, DirectFET™ S/M/L-
Can, TOLL, TO-220, DPAK, D²PAK
SuperSO8, PQFN 3x3, DirectFET™ S/M/L-
Can, TOLL, TO-220, TO-247, DPAK, D²PAK,
D²PAK 7-pin
SuperS08, PQFN 3x3, TO-220, DPAK,
D²PAK, D²PAK 7-pin, D
2
PAK 7-pin+, TOLL,
DirectFET™ L-Can
CoolMOS™ P7 SJ MOSFET* Voltage 600-800 V 600-700 V 600 V
Gate driver ICs 1EDN, 2EDN, 1EDN7550, 2EDL811x,
6ED003L02-F2, 6ED003L06-F2, 6EDL04N-
02PR, 6EDL04N06PT, 2EDL05N06PF,
IRS2005S, IRS2005M, IRS2007S, IRS2008S,
IRS2011S
Integrated gate driver ICs: IFX9201/2,
NovalithIC™ BTN8982, Trilith IC BTM7752
1EDN/2EDN/6EDL04N02PR, 6ED003L02-
F2, 2EDL05N06PF, 2ED2304S06F,
IRS2005S/M, IRS2007S, IRS2008S, IRS2301,
IRS21867, IRS2304
Integrated: IFX9201SG/ BTN8982
1EDN/2EDN/ 2EDL/ 6EDL04N02PR,
6ED003L02-F2, 2EDL05N06PF,
2ED2304S06F, IRS2005S/M, IRS2007S,
IRS2008S, IRS2301, IRS21867, IRS2304
IPM – CIPOS™ Nano IRSM836-0x4MA (x=2,4,8), IRSM808-204MH IRSM005-800MH, IRSM005-301MH
Authentication IC, security OPTIGA™ Trust B/X, OPTIGA™ TPM OPTIGA™ Trust B OPTIGA™ Trust B
XMC™ microcontrollers
iMotion™
ePower
XMC1100
XMC1000/XMC4000
iMOTION™: IRMCK099M
ePower: TLE987X (BLDC), TLE986X (BDC)
XMC1300
XMC4400/XMC4500
iMOTION™ IRMCK099M
ePower: TLE987X (BLDC)
XMC1300
XMC 4400/XMC4500
Microcontroller and driver supply:
linear voltage and DCDC switching
regulators
IFX1763/IFX54441/IFX54211/IFX30081/IFX90121/IFX91041
CAN transceivers IFX1050, IFX1051
Sensors Hall switches (TLE 496X),
Angle sensor (TLI5012B, TLE5501),
3D magnetic sensor (TLV493D),
Current sensor (TLI4970)
Hall switches (TLE496X),
Angle sensor (TLI5012B),
3D magnetic sensor (TLV493D)
Hall switches (TLE496X),
Angle sensor (TLI5012B),
3D magnetic sensor (TLV493D)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
6
7
Battery powered applications
We live in a mobile world filled with electrical devices - consumer-grade robots, light electric vehicles, multicopters and
other end products driven by highly eicient electric motors. As these products evolve and improve, there is an increasing
need for designers and engineers to find solutions that are more eicient, smaller, and less costly than ever before.
Based on the industry-leading technology, the highest quality, and manufacturing expertise, Infineon provides a
variety of innovative power semiconductors addressing a broad range of battery powered motor control applications,
such as power tools, forklis, all kinds of light electric vehicles including e-skateboards, e-scooters, pedelecs, low
speed cars, and many others. Through an excellent selection of devices for power management, consumption and
voltage regulation – such as power MOSFETs (e.g. CoolMOS™, OptiMOS™, and HEXFET™/StrongIRFET™), XMC™
microcontrollers, EiceDRIVER™ gate drivers and more, Infineon oers all components that are needed for the compact,
cost-eective designs of today, and for the innovative designs of tomorrow.
Battery powered applications
Highest performance in motor control
www.infineon.com/motorcontrol
Key enabling products for battery powered applications
Consumer robotics Home and professional applications Light electric vehicles
Consumer multicopters, vacuum robots, RC toys, service,
household, and other consumer robots
Power tools, gardening tools, commercial multicopters,
cordless home appliance, cordless vacuum cleaners, and
healthcare equipment
eScooter, eBike, electric wheelchair, electric forkli, low
speed electric vehicles (LSEV), electric motorcycle, and
other battery vehicles
To shorten customer development time and cost, we oer a complete portfolio of low voltage motor control application kits:
Battery powered applications
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet, the previous CoolMOS™ CE and P6 series are the preferred series
HEXFET™/StrongIRFET™ 20-300V
EiceDRIVER™
CIPOS™ Nano
XMC1100
XMC1000/XMC4000
iMOTION™ and embedded power ICs
XMC1300/XMC1400
Linear voltage and DC-DC switching regulators
IFX1050, IFX1051
Hall and xMR sensors
OPTIGA™ Trust B/X, OPTIGA™ TPM
OptiMOS™ 25-100V
200 V and 600 V gate driver ICs
XMC4500/XMC4400
OPTIGA™ Trust B
CoolMOS™ P7 superjunction (SJ) MOSFET*
OptiMOS™ 80-300V
Home and professional
applications
MOSFETs
Gate driver ICs
Microcontrollers
IPM
Microcontroller and driver supply
CAN transceivers
Magnetic sensors
Authentication
Light electric vehicles
Consumer robotics
XMC1000 motor control
application kit
XMC4000 motor control
application kit
iMOTION™ modular application
design kit (MADK)
40 V Medium Can ME/MF
DirectFET™ 3-phase BLDC motor drive
demo board (DEMO-PTOOL-300W-M)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
7
Typical battery powered three-phase system – a one-stop-shop for battery powered drives
A complete set of components that ensure system-cost competitiveness and high performance solution
Why to choose Infineon as your partner for innovation in battery powered applications
www.infineon.com/motorcontrol
Current sensing
Current sensing
Gate driver ICs
EiceDRIVER™
200 V driver ICs
3-phase
inverter
OptiMOS™
HEXFET™/
StrongIRFET
IPM
USB,
XMC™
microcontroller
and
digital controller
and
iMOTION™
IRMCK099
M
Status
indication
LED drivers ≤ 60 V
User
interface
Power management
Battery management
CoolMOS™
OPTIGA™
OptiMOS™
HEXFET™/StrongIRFET™
Linear voltage/DC-DC
switching regulators
serial COM
& ethernet
CAN transceiver
Position sensing
Hall switches,
linear Hall,
angle, and
current sensors
Battery powered applications
Infineon product oering Customer benefits
Complete solutions – broad portfolio › Whatever design specification, Infineon has the answer in the comprehensive portfolio of products and solutions which you can
easily tailor to your needs
› Infineon oers solutions for power supplies, chargers, motor drives and sensors
Extended battery lifetime and
product life spans
› BiC MOSFETs e.g. OptiMOS™ and HEXFET™/StrongIRFET™ extend battery lifetime and reduce chances for control failure
› High reliability of Infineon components results in prolonged product lifespans
Productive capability › Oering LV FETs with SMD packaging improves the productive capability by automatic production, improves reliability and
reduces assembly cost
Overall system size and cost reduction › With Infineon‘s components you can reduce of overall system size and cost due to components occupying smallest area and
featuring compact design, both of which are required for highest power density and BOM savings thanks to lowest RDS(on)
Security, quality and safety › Trustworthy hardware-based security
› As a security market leader with a proven track record and outstanding partner network for embedded security, Infineon provides
highest quality standards and a safety certified development process
Authentication › OPTIGA™ Trust enables authentication of components connected to the system (e.g., battery pack recognition to avoid second
party batteries etc.)
Fast time-to-market › Faster time-to-market is enabled by providing evaluation and demo boards for fast prototyping, and simulations, documentation,
and system support that reduce development time and cost
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet, the previous CoolMOS™ CE and P6 series are the preferred series
Infineon product oering Consumer robotics Home and professional applications Light electric vehicles
Supply voltage 12-48 V 10.8-56 V 24-144 V
OptiMOS™ and
HEXFET™/StrongIRFET™
power MOSFETs
Voltage 25-200 V 20-100 V 60-300 V
Package SuperS08, PQFN 3x3, DirectFET™ S/M/L-
Can, TOLL, TO-220, DPAK, D²PAK
SuperSO8, PQFN 3x3, DirectFET™ S/M/L-
Can, TOLL, TO-220, TO-247, DPAK, D²PAK,
D²PAK 7-pin
SuperS08, PQFN 3x3, TO-220, DPAK,
D²PAK, D²PAK 7-pin, D
2
PAK 7-pin+, TOLL,
DirectFET™ L-Can
CoolMOS™ P7 SJ MOSFET* Voltage 600-800 V 600-700 V 600 V
Gate driver ICs 1EDN, 2EDN, 1EDN7550, 2EDL811x,
6ED003L02-F2, 6ED003L06-F2, 6EDL04N-
02PR, 6EDL04N06PT, 2EDL05N06PF,
IRS2005S, IRS2005M, IRS2007S, IRS2008S,
IRS2011S
Integrated gate driver ICs: IFX9201/2,
NovalithIC™ BTN8982, Trilith IC BTM7752
1EDN/2EDN/6EDL04N02PR, 6ED003L02-
F2, 2EDL05N06PF, 2ED2304S06F,
IRS2005S/M, IRS2007S, IRS2008S, IRS2301,
IRS21867, IRS2304
Integrated: IFX9201SG/ BTN8982
1EDN/2EDN/ 2EDL/ 6EDL04N02PR,
6ED003L02-F2, 2EDL05N06PF,
2ED2304S06F, IRS2005S/M, IRS2007S,
IRS2008S, IRS2301, IRS21867, IRS2304
IPM – CIPOS™ Nano IRSM836-0x4MA (x=2,4,8), IRSM808-204MH IRSM005-800MH, IRSM005-301MH
Authentication IC, security OPTIGA™ Trust B/X, OPTIGA™ TPM OPTIGA™ Trust B OPTIGA™ Trust B
XMC™ microcontrollers
iMotion™
ePower
XMC1100
XMC1000/XMC4000
iMOTION™: IRMCK099M
ePower: TLE987X (BLDC), TLE986X (BDC)
XMC1300
XMC4400/XMC4500
iMOTION™ IRMCK099M
ePower: TLE987X (BLDC)
XMC1300
XMC 4400/XMC4500
Microcontroller and driver supply:
linear voltage and DCDC switching
regulators
IFX1763/IFX54441/IFX54211/IFX30081/IFX90121/IFX91041
CAN transceivers IFX1050, IFX1051
Sensors Hall switches (TLE 496X),
Angle sensor (TLI5012B, TLE5501),
3D magnetic sensor (TLV493D),
Current sensor (TLI4970)
Hall switches (TLE496X),
Angle sensor (TLI5012B),
3D magnetic sensor (TLV493D)
Hall switches (TLE496X),
Angle sensor (TLI5012B),
3D magnetic sensor (TLV493D)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
9
E-mobility
Product portfolio for onboard and o-board charger applications
Infineon’s comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself
perfectly to designs of compact units for onboard, o-board, and wireless charging. Our products in this sector support high
switching frequencies at lowest possible on-state resistance (RDS(on)) to enable compact and eicient designs: MOSFETs such
as CoolMOS™, IGBTs such as TRENCHSTOP™ 5 and SiC Schottky diodes, such as 650V CoolSiC™ diode. In addition, integrated
MOSFET and IGBT drivers, controller ICs for active CCM PFC high-performance microcontroller solutions and highly accurate
current sensors complete our product portfolio. For more information about o-board chargers, refer to page 46 DC EV charging.
Typical part number Product family Description
1ED020I12FA2 Automotive EiceDRIVER™ Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs
1ED020I12FTA Automotive EiceDRIVER™ Single-channel isolated driver, two-level turn-o for 650V/1200V IGBTs
2ED020I12FA Automotive EiceDRIVER™ Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs
IPx65RxxxCFDA CoolMOS™ 650V MOSFET with integrated fast body diode
TC23xL, TC26xD AURIX™ 32-bit lockstep microcontroller
TLF35584
1)
System supply New ISO26262 – system-supply optimized for AURIX™
TLE7250G Transceiver High-speed automotive CAN transceiver
TLE6251D Transceiver High-speed automotive CAN transceiver, with wake-up
Typical part number Product family Description
IKWxxN65F5/H5/EH5, IKZxxN65EH5/NH5
TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT with Rapid 1 diode
IGWxxN65F5/H5, IGZxxN65H5 TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT
IDWxxG65/120C5(B
3)
) CoolSiC™ diodes 650 V/1200 V SiC Schottky diode generation 5
IDWDxxG120C5 CoolSiC™ diodes 1200 V SiC Schottky diode generation 5 TO-247 2-pin
IMW/Z120RxxxM1 CoolSiC™ MOSFETs 1200 V SiC MOSFETs
IPW65RxxxC7 CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ C7 series for hard switching topologies
IPW60RxxxP7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ P7 series for hard switching topologies
IPW65RxxxCFD CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ CFD2 series for so switching topologies
IPW60RxxxCFD7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ CFD7 series for so switching topologies
HYBRIDPACKTM 1 Power module 1200 V/200 A for fast and ultrafast charging (>10 kW/phase)
XMC1000
2)
, XMC4000
2)
XMC™ microcontrollers
32-bit ARM® Cortex® M0/M4F microcontrollers, up to 125ºC ambient temperature (XMC4000)
IFX1763, IFX54441, IFX54211 Linear voltage regulators
Linear voltage regulator family with output current capability of 500 mA/300 mA/150 mA
respectively
IFX1050, IFX1021 Transceivers High-speed CAN transceiver/LIN transceiver
TLI4970 Current sensor 600 V functional isolation, ± 50 A
2EDNxxxxF/R
EiceDRIVER™ 2EDN gate driver ICs
Dual-channel, low-side, non-isolated
1EDIxxN12AF
EiceDRIVER™ 1EDL Compact gate driver ICs
Single-channel, high-side isolated
1) in development
2) for external chargers
3) „B“ in product name refers to common-cathode configuration
Wireless charging
Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts
for wireless power transfer systems have been proposed, which in general seek to compensate the significant stray
inductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. At the end of
2013, SAE announced a new standard for inductive charging which defined three power levels at 85 kHz. Infineon’s
TRENCHSTOP™ 5 IGBTs and CoolSiC™ diodes are perfectly suited for driving inductive power transfer systems on the
road side which operate inside the 80 to 90 kHz band.
Power
(grid)
50/60 Hz
High voltage
battery
~+
-
+
-
+
-
Road side Car side
M
~~
Inverter
Resonance
loops
PFC
AC-DC
Receiver
Resonance
loops
Rectifier
Battery
management
85 kHz
High
voltage
switch
Microcontroller
High
voltage
switch
Gate driver ICsGate driver ICs
Microcontroller
www.infineon.com/emobility
Automotive products for onboard units
Industrial products for o-board units
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
8
9
E-mobility
To recharge the battery of an electric or hybrid car, a charger is needed. Chargers can be implemented onboard
or
o-board the vehicle. Electric energy is transferred to the vehicle by wire or by wireless methods like resonant
inductive power transfer. Power units onboard the vehicle require automotive-grade components, while the wider
product selection of industrial-grade components can be used for o-board units.
Onboard chargers
In cars with onboard chargers the batteries can be recharged from any standard AC power outlet, which provides
maximum power of 6.6 kW best case (single-phase 230 V/32 A). This standard charging at low power takes several
hours (overnight). Battery charging via the power grid requires a flexible power converter topology to handle dierent
voltage and power ratings wherever the car may go to, and onboard chargers need to be as eicient and small as
possible to stay cool at the lowest possible weight.
O-board chargers
In o-board chargers, the power conversion from AC grid voltage to DC battery voltage is done outside the car and the
resulting DC power is transmitted by wire to the DC-charging socket in an electric vehicle. Ultrafast chargers with power
ratings at 50 kW and more have been designed in this way. As the power converter is o-board, automotive grade
qualification is not required for the respective electronic components. Apart from fast and ultrafast chargers, there may
be a market for o-board chargers in the power range up to 10 kW, for example to charge small and economic electric
vehicles (LEVs). Also in case of the o-board chargers, selecting the right topology to enable maximum conversion
eiciency is an important design criterion.
AC-DC battery chargers: functional blocks
E-mobility
Best solutions for battery chargers, wireless charging and battery management
*For o-board chargers only
RFI
filter PFC DC-DC
converter
RFI
filter PFC DC-DC
converter
RFI
filter PFC DC-DC
converter
Power
(grid)
Auxiliary
power
supply
Control + display
Isolation
Battery
management
L1
L2
L3
N
L1
L2
L3
I/V measurement
Single-phase charger
Microcontroller
power supply
32-bit
microcontroller
TC23xL
TC26xD
XMC1000*
XMC4000*
Isolated current
sensor
Transceiver
Gate driver ICs
Microcontroller
Input
Protection
EMI Filter
AC inputPFC stagePFC output
Driver ICs
Driver ICs
Driver ICs
www.infineon.com/emobility
Driver ICs High
voltage
battery
Digital isolation
Driver ICs
Microcontroller
PFC stage output Full-bridge converterPWM stage – secondary rectification
Driver ICs
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
9
E-mobility
Product portfolio for onboard and o-board charger applications
Infineon’s comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself
perfectly to designs of compact units for onboard, o-board, and wireless charging. Our products in this sector support high
switching frequencies at lowest possible on-state resistance (RDS(on)) to enable compact and eicient designs: MOSFETs such
as CoolMOS™, IGBTs such as TRENCHSTOP™ 5 and SiC Schottky diodes, such as 650V CoolSiC™ diode. In addition, integrated
MOSFET and IGBT drivers, controller ICs for active CCM PFC high-performance microcontroller solutions and highly accurate
current sensors complete our product portfolio. For more information about o-board chargers, refer to page 46 DC EV charging.
Typical part number Product family Description
1ED020I12FA2 Automotive EiceDRIVER™ Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs
1ED020I12FTA Automotive EiceDRIVER™ Single-channel isolated driver, two-level turn-o for 650V/1200V IGBTs
2ED020I12FA Automotive EiceDRIVER™ Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs
IPx65RxxxCFDA CoolMOS™ 650V MOSFET with integrated fast body diode
TC23xL, TC26xD AURIX™ 32-bit lockstep microcontroller
TLF35584
1)
System supply New ISO26262 – system-supply optimized for AURIX™
TLE7250G Transceiver High-speed automotive CAN transceiver
TLE6251D Transceiver High-speed automotive CAN transceiver, with wake-up
Typical part number Product family Description
IKWxxN65F5/H5/EH5, IKZxxN65EH5/NH5
TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT with Rapid 1 diode
IGWxxN65F5/H5, IGZxxN65H5 TRENCHSTOP™ 5 IGBTs 650 V ultrafast/fast IGBT
IDWxxG65/120C5(B
3)
) CoolSiC™ diodes 650 V/1200 V SiC Schottky diode generation 5
IDWDxxG120C5 CoolSiC™ diodes 1200 V SiC Schottky diode generation 5 TO-247 2-pin
IMW/Z120RxxxM1 CoolSiC™ MOSFETs 1200 V SiC MOSFETs
IPW65RxxxC7 CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ C7 series for hard switching topologies
IPW60RxxxP7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ P7 series for hard switching topologies
IPW65RxxxCFD CoolMOS™ SJ MOSFETs 650 V MOSFET, CoolMOS™ CFD2 series for so switching topologies
IPW60RxxxCFD7 CoolMOS™ SJ MOSFETs 600 V MOSFET, CoolMOS™ CFD7 series for so switching topologies
HYBRIDPACKTM 1 Power module 1200 V/200 A for fast and ultrafast charging (>10 kW/phase)
XMC1000
2)
, XMC4000
2)
XMC™ microcontrollers
32-bit ARM® Cortex® M0/M4F microcontrollers, up to 125ºC ambient temperature (XMC4000)
IFX1763, IFX54441, IFX54211 Linear voltage regulators
Linear voltage regulator family with output current capability of 500 mA/300 mA/150 mA
respectively
IFX1050, IFX1021 Transceivers High-speed CAN transceiver/LIN transceiver
TLI4970 Current sensor 600 V functional isolation, ± 50 A
2EDNxxxxF/R
EiceDRIVER™ 2EDN gate driver ICs
Dual-channel, low-side, non-isolated
1EDIxxN12AF
EiceDRIVER™ 1EDL Compact gate driver ICs
Single-channel, high-side isolated
1) in development
2) for external chargers
3) „B“ in product name refers to common-cathode configuration
Wireless charging
Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts
for wireless power transfer systems have been proposed, which in general seek to compensate the significant stray
inductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. At the end of
2013, SAE announced a new standard for inductive charging which defined three power levels at 85 kHz. Infineon’s
TRENCHSTOP™ 5 IGBTs and CoolSiC™ diodes are perfectly suited for driving inductive power transfer systems on the
road side which operate inside the 80 to 90 kHz band.
Power
(grid)
50/60 Hz
High voltage
battery
~+
-
+
-
+
-
Road side Car side
M
~~
Inverter
Resonance
loops
PFC
AC-DC
Receiver
Resonance
loops
Rectifier
Battery
management
85 kHz
High
voltage
switch
Microcontroller
High
voltage
switch
Gate driver ICsGate driver ICs
Microcontroller
www.infineon.com/emobility
Automotive products for onboard units
Industrial products for o-board units
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
11
1) In development
E-mobility
Best solution for battery management
An intelligent battery management system (BMS) is necessary to sustain battery performance throughout its entire
lifetime – the challenge there is to tune the utilization of each battery cell individually. Passive cell balancing is the default
approach where the weakest of the cells sets the limits for battery lifetime and cruising range. Infineon’s microcontrollers
and sensors, in combination with our power devices, enable active cell balancing while charging and discharging. An active
cell balancing system helps to increase the eective cruising range and the battery lifetime by 5 to 10 percent, compared to
passive balancing. In this context, highlights are our 8-bit XC886CM microcontroller family for the slave blocks and the new
32-bit AURIX™ microcontroller family for the master block, OptiMOS™ low voltage MOSFETs, automotive CAN transceivers
TLE7250G, TLE6251D, as well as step-down DC-DC controllers TLE6389-2GV and brand-new TLF35584.
Typical part number Description
TC23xL, TC26xD 32-bit AURIX™ lockstep microcontrollers
TLF35584
1)
ISO26262-system-supply optimized for AURIX™
TLE7250G High-speed automotive CAN transceiver
TLE6251D High-speed automotive CAN transceiver, with wake-up
Typical part number Description
XC886CM 8051-compatible 8-bit automotive microcontroller
TLE6389-2GV Step-down DC-DC controller
TLE7250G High-speed automotive CAN transceiver
IPG20N04S4L OptiMOS™ -T2 power transistor, logic level, dual, 40V/8.2 mW
IPD70N03S4L OptiMOS™ -T2 power transistor, logic level, 30V/4.3 mW
IPD70N10S3L OptiMOS™ -T2 power transistor, logic level, 100V/11.5 mW
Typical part number Product family Description
IPx65RxxxCFDA CoolMOS™ CFDA 650 V SJ MOSFET with integrated fast body diode
Main switch
650 V CoolMOS™
Battery master
32-bit microcontroller
TC23xL/TC26xD
TLF35584
HS-CAN transceiver
TLE7250G
Private CAN
Public CAN
150 V-400 V
+
-
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit uC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
High
voltage
switch
Gate driver ICs
Microcontroller
www.infineon.com/emobility
Main switch
Battery master
Battery master
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
10
11
E-mobility
Charger concepts without galvanic isolation of the power stages
Transformerless designs, without galvanic isolation inside the power stages, are economic and eicient. But enhanced
safety measures may be required to operate such designs from standard AC-grid power outlets. Type-B RCD (GFCI)
safety switches are needed on the grid side to immediately break the circuit in case an unintended feedback of
DC-voltage from the HV-battery into the AC-grid occurs under worst-case failure conditions, but type-B safety switches
on the grid side are not standard by today. The main reason why non-isolated designs are currently not accepted for
onboard chargers is because the level of safety measures on the grid side of the charging spot is uncertain. However,
inside an o-board charger installation with an integrated type-B safety switch, the use of non-isolated concepts may
be indicated. To highlight their opportunities, Infineon has investigated non-isolated concepts, built and evaluated
laboratory demonstrators of single-phase 3 kW chargers without galvanic isolation inside the power stages.
Typical part number Product family Description
ICE3PCS01G Integrated controller For active CCM PFC, DSO 14-pin
IPW65R019C7 CoolMOS™ C7 SJ MOSFET 650V MOSFET, 19 mΩ, TO-247
IDW30G65C5 CoolSiC™ diode 650V SiC Schottky diode generation 5, 30 A, TO-247
TLI4970 Current sensor 600V functional isolation, ± 50 A
Typical part number Product family Description
1ED020I12FA2 Automotive EiceDRIVER™ Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs
1ED020I12FTA Automotive EiceDRIVER™ Single-channel isolated driver, two-level turn-o for 650V/1200V IGBTs
2ED020I12FA Automotive EiceDRIVER™ Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs
IPx65RxxxCFDA CoolMOS™ 650V MOSFET with integrated fast body diode
TC23xL, TC26xD AURIX™ 32-bit lockstep microcontroller
TLF35584
1)
System supply New ISO26262-system-supply optimized for AURIX™
RCD
(GFCI)
type B
AC-DC
PFC w/o
galvanic
isolation
DC-DC
buck
Power
(grid) ~+
-
N
+
-
L1
To EV‘s DC
charging socket
High
voltage
switch
Gate driver ICs
Microcontroller
1) In development
2) Automotive version under consideration
3) More detailed information about this demonstrator is available upon request
Concept demonstrator3) of lean
and eicient o-board DC-charger
without galvanic isolation
› Input 230V/50 Hz single-phase AC
› Output 220V-390VDC, max. power
3.3 kW at 350V with 96.2 percent
eiciency
Typical part number Product family Description
IKW40N65F5 TRENCHSTOP™ 5 IGBTs Fast IGBT with Rapid 1 diode, 40 A, TO-247
IGW40N65F5 TRENCHSTOP™ 5 IGBTs Fast IGBT, single, 40 A, TO-247
IDW40G65C5 CoolSiC™ diode 650V SiC Schottky diode generation 5, 40 A, TO-247
2)
XMC4000 XMC™ microcontroller 32-bit ARM® Cortex® -M4F microcontrollers, up to 125 ºC ambient temperature
IFX1763, IFX54441 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA or 300 mA respectively
TLI4970 Current sensor 600V functional isolation, ± 50 A
*Available in dierent current ratings
www.infineon.com/emobility
Automotive products for the car side*
Industrial products for the road side*
Industrial products for the road side
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
11
1) In development
E-mobility
Best solution for battery management
An intelligent battery management system (BMS) is necessary to sustain battery performance throughout its entire
lifetime – the challenge there is to tune the utilization of each battery cell individually. Passive cell balancing is the default
approach where the weakest of the cells sets the limits for battery lifetime and cruising range. Infineon’s microcontrollers
and sensors, in combination with our power devices, enable active cell balancing while charging and discharging. An active
cell balancing system helps to increase the eective cruising range and the battery lifetime by 5 to 10 percent, compared to
passive balancing. In this context, highlights are our 8-bit XC886CM microcontroller family for the slave blocks and the new
32-bit AURIX™ microcontroller family for the master block, OptiMOS™ low voltage MOSFETs, automotive CAN transceivers
TLE7250G, TLE6251D, as well as step-down DC-DC controllers TLE6389-2GV and brand-new TLF35584.
Typical part number Description
TC23xL, TC26xD 32-bit AURIX™ lockstep microcontrollers
TLF35584
1)
ISO26262-system-supply optimized for AURIX™
TLE7250G High-speed automotive CAN transceiver
TLE6251D High-speed automotive CAN transceiver, with wake-up
Typical part number Description
XC886CM 8051-compatible 8-bit automotive microcontroller
TLE6389-2GV Step-down DC-DC controller
TLE7250G High-speed automotive CAN transceiver
IPG20N04S4L OptiMOS™ -T2 power transistor, logic level, dual, 40V/8.2 mW
IPD70N03S4L OptiMOS™ -T2 power transistor, logic level, 30V/4.3 mW
IPD70N10S3L OptiMOS™ -T2 power transistor, logic level, 100V/11.5 mW
Typical part number Product family Description
IPx65RxxxCFDA CoolMOS™ CFDA 650 V SJ MOSFET with integrated fast body diode
Main switch
650 V CoolMOS™
Battery master
32-bit microcontroller
TC23xL/TC26xD
TLF35584
HS-CAN transceiver
TLE7250G
Private CAN
Public CAN
150 V-400 V
+
-
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit uC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
Battery block slave
8-bit µC XC 886CM
6x IPG20N04S4L-08
IPD70N03S4L
IPD70N10S3L
TLE7250G
TLE6389-2GV
High
voltage
switch
Gate driver ICs
Microcontroller
www.infineon.com/emobility
Main switch
Battery master
Battery master
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
13
PWM
modulator
Analog input class D driver family
Protection
Class D
audio
MOSFETs
Gate driver
LPF
Multi-chip audio amplifier module
PWM input class D driver family
www.infineon.com/audiosolutions
MERUS™ integrated audio amplifier multi-chip modules (MCM)
The integrated class D audio module family of devices integrates PWM controller and digital audio power MOSFETs in
a single package to oer a highly eicient, compact solution that reduces component count, shrinks PCB size up to 70
percent and simplifies class D amplifier design.
Multi-chip audio amplifier module
Discrete audio solutions
MERUS™ discrete audio amplifier driver ICs
Infineon’s family of ICs developed specifically for class D audio applications enable audio system manufacturers to
more eiciently design audio product with superior audio performance and higher reliability.
Recommended audio MOSFETs
Audio MOSFETs are specifically designed for class D audio amplifier applications. Key parameters, such as on-state
resistance (RDS(on)), gate charge (QG), and reverse recovery charge (Qrr), are optimized for maximizing eiciency, THD
and EMI amplifier performance.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
12
13
Class D audio solutions
Cooler, smaller and lighter amplifiers for great sounding audio products
Audio solutions
www.infineon.com/audiosolutions
Infineon’s audio solutions enable audio designers to improve the performance of their products, while increasing
eiciency and reducing solution size. Advances in semiconductor processes in combination with new innovative
architectures are behind a portfolio of class D technologies that allow professional, commercial/home and portable
audio applications to benefit from unparalleled performance, power density and reliability.
Infineon’s advantage
Infineon oers a unique design
platform with high-performance
class D amplifier solutions for all
power ranges and applications
between 20 W and 2000 W per
channel - from the smallest fully
integrated single-chip solutions to
highly scalable driver and discrete
MOSFET combinations.
Integrated audio solutions
MERUS™ integrated multilevel audio amplifier ICs for class D audio solutions
With the revolutionary multilevel class D audio amplifier ICs, Infineon is leading in eiciency and power density.
Monolithic multilevel class D amplifier ICs give designers full flexibility to optimize audio systems for size, performance,
and cost to meet critical design objectives in today’s and tomorrow’s audio applications. These applications include
battery operated speakers, voice controlled active speakers, television sets, stereo HiFi, soundbars, monitors,
power-over-ethernet (PoE) and multichannel systems.
Filterless topology with “flying capacitor” of an integrated class D IC
PWM
modulator
Protection
Multilevel amplifiers
PVDO
Output power [W/Channel]
Scalable in power/flexibility Best audio performanceHighest power w/o heatsinkLowest idle power* Coming soon
No heatsink
20
Digital input Analog input
100 1000
2000
w/gate buer
IRS209X (1 ch) + CoolGaN™ 400 V e-mode HEMTs*
IRS2092 (1 ch) + MOSFETs
IRS2052 (2 ch) + MOSFETs
IRS2093 (4 ch) + MOSFETs
IR43x1 (1 ch)
IR43x2 (2 ch)
MA12040 (1-4 ch)
MA12070 (1-4 ch)
MA12040P (1-4 ch)
MA12070P (1-4 ch)
Integrated IC IC + MOSFETs /E-GaN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
13
PWM
modulator
Analog input class D driver family
Protection
Class D
audio
MOSFETs
Gate driver
LPF
Multi-chip audio amplifier module
PWM input class D driver family
www.infineon.com/audiosolutions
MERUS™ integrated audio amplifier multi-chip modules (MCM)
The integrated class D audio module family of devices integrates PWM controller and digital audio power MOSFETs in
a single package to oer a highly eicient, compact solution that reduces component count, shrinks PCB size up to 70
percent and simplifies class D amplifier design.
Multi-chip audio amplifier module
Discrete audio solutions
MERUS™ discrete audio amplifier driver ICs
Infineon’s family of ICs developed specifically for class D audio applications enable audio system manufacturers to
more eiciently design audio product with superior audio performance and higher reliability.
Recommended audio MOSFETs
Audio MOSFETs are specifically designed for class D audio amplifier applications. Key parameters, such as on-state
resistance (RDS(on)), gate charge (QG), and reverse recovery charge (Qrr), are optimized for maximizing eiciency, THD
and EMI amplifier performance.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
15
www.infineon.com/audiosolutions
www.infineon.com/gan
Discrete class D audio solution portfolio
Audio solutions
MERUS™ discrete audio amplifier driver IC product portfolio
Recommended CoolGaN™ e-mode HEMTs portfolio
Recommended audio MOSFET (through-hole) portfolio
*IRS2093S works up to150 W and IRS2052M works up to 300 W.
** IRS2092S and IRS20957S work with all power levels listed above.
Recommended audio MOSFET (DirectFET™) portfolio
IRS20965S IRS20957S IRS2092S IRS2052M IRS2093M IRS2452AM
Specifications Number of audio channels 111242
Max. power per channel 500 W 500 W 500 W 300 W 300 W 500 W
Supply voltage ±100 V ±100 V ±100 V ±100 V ±100 V ±200 V
Gate sink/source current 2.0/2.0 A 1.2/1.0 A 1.2/1.0 A 0.6/0.5 A 0.6/0.5 A 0.6/0.5 A
Features Over-current protection ✓✓✓✓✓✓
Over-current flag ✓
PWM input ✓ ✓
Floating input ✓✓✓✓✓✓
Dead time ✓✓✓✓✓
Protection control logic ✓✓✓✓✓✓
PWM controller ✓✓✓✓
Clip detection ✓
Click noise reduction ✓✓✓✓
Temperature sensor input ✓ ✓
Thermal shutdown ✓
Clock input ✓ ✓
Package type 16-pin SOIC narrow 16-pin SOIC narrow 16-pin SOIC narrow MLPQ48 MLPQ48 MLPQ32
Evaluation boards - IRAUDAMP4A,
IRAUDAMP6
IRAUDAMP5,
IRAUDAMP7S,
IRAUDAMP7D,
IRAUDAMP9
IRAUDAMP10 IRAUDAMP8 EVAL_IRAUDAMP23
CoolGaN 400 V e-mode HEMTs Recommended audio driver IC
Package
PG-DSO-20-87 (top-side cooling) HSOF-8-3 (TO-leadless)
IRS20957S
Pmax
Up to 500 W Up to 200 W
RDS(on) max.
70 m
Ω
70 m
Ω
Part number
IGOT40R070D1 IGT40R070D1
Output power [W] Recommended driver IC Speaker resistance
2 Ω 4 Ω 8 Ω
150 IRS2093S* IRFB4019 IRFB4019 IRFI4020H
200
IRS2052M*
IRFB5615 IRFB4019 IRFI4020H
300
IRS2092S**
IRFB4228 IRFB4227 IRFB4229
500
IRS20957S**
IRFB4228 IRFB4227 IRFB4229
750 IRFB4227 IRFB4229
1000 IRFP4668 IRFB4229 x 2
Output power [W] Recommended driver IC Speaker resistance
2 Ω 4 Ω 8 Ω
150 IRS2093S* IRF6645 IRF6665 IRF6775
200
IRS2052M*
IRF6646 IRF6775 IRF6775
300
IRS2092S**
IRF6644 IRF6775 IRF6785
500
IRS20957S**
IRF6643 IRF6641
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
14
15
www.infineon.com/audiosolutions
Integrated class D audio solution portfolio
Audio solutions
*All ICs carry a full protection scheme comprising undervoltage-lockout, overtemperature warning/error, short-circuit/overload protection, power stage pin-to-pin short-circuit,
error-reporting through serial interface (I
2
C), DC protection.
MERUS™ integrated audio amplifier multi-chip module (MCM) portfolio
IR4301M IR4321M IR4311M IR4302M IR4322M IR4312M
Specifications Number of audio channels 111222
Max. power per channel 160 W 90 W 45 W 130 W 100 W 40 W
Supply voltage ~ ± 31 V or 62 V ~ ±25 V or 50 V ~ ±15 V or 30 V ~ ± 31 V or 62 V ~ ±25 V or 50 V ~ ±16 V or 32 V
Max. PWM frequency 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz
Features Dierential audio input ✓✓✓✓✓✓
Over-current protection ✓✓✓✓✓✓
Integrated power MOSFET (80 V) (60 V) (40 V) (80 V) (60 V) (40 V)
PWM controller ✓✓✓✓✓✓
Thermal shutdown ✓✓✓✓✓✓
Click noise reduction ✓✓✓✓✓✓
Clip detection ✓✓✓
Fault output ✓✓✓
Package type 5 x 6 mm QFN 5 x 6 mm QFN 5 x 6 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN
Evaluation boards IRAUDAMP12,
IRAUDAMP19
IRAUDAMP21 IRAUDAMP15 IRAUDAMP16,
IRAUDAMP17
IRAUDAMP22 IRAUDAMP18
MA12040 MA12040P MA12070 MA12070P
Specifications Number of audio channels 2xBTL/2xSE/1xPBTL 2xBTL/2xSE/1xPBTL 2xBTL/2xSE/1xPBTL 2xBTL/2xSE/1xPBTL
Max. peak power @ 4 Ω 10% THD 2x40 W 2x40 W 2x80 W 2x80 W
Supply voltage 4-18 V 4-18 V 4-26 V 4-26 V
3-level and 5-level modulation ✓✓✓✓
Max. PWM frequency 726 kHz
Audio input Analog Digital Analog Digital
Hi-Res audio compliant ✓ ✓
Volume anddynamic range control ✓ ✓
Idle power dissipation
Max output andall channels switching
<100 mW <110 mW <160 mW <160 mW
Audio performance (PMP2) >107 dB DNR 55 μV output
noise 0.003% THD+N
>98 dB DNR 135 μV output
noise 0.006% THD+N
>110 dB SNR 45 μV output
integrated 0.004%THD+N
101 dB SNR 140 μV output
noise 0.007% THD+N
Features Comprehensive protection scheme* ✓✓✓✓
Configurable for SE or PBTL operation ✓✓✓✓
I
2
C communication ✓✓✓✓
Filterless implementation ✓✓✓✓
Package type 64-pin QFN package with
exposed thermal pad
64-pin QFN package with
exposed thermal pad
64-pin QFN package with
exposed thermal pad
64-pin QFN package with
exposed thermal pad
Evaluation boards EVAL_AUDIO_MA12040 EVAL_AUDIO_MA12040P EVAL_AUDIO_MA12070 EVAL_AUDIO_MA12070P
MERUS™ integrated multilevel audio amplifier IC portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
15
www.infineon.com/audiosolutions
www.infineon.com/gan
Discrete class D audio solution portfolio
Audio solutions
MERUS™ discrete audio amplifier driver IC product portfolio
Recommended CoolGaN™ e-mode HEMTs portfolio
Recommended audio MOSFET (through-hole) portfolio
*IRS2093S works up to150 W and IRS2052M works up to 300 W.
** IRS2092S and IRS20957S work with all power levels listed above.
Recommended audio MOSFET (DirectFET™) portfolio
IRS20965S IRS20957S IRS2092S IRS2052M IRS2093M IRS2452AM
Specifications Number of audio channels 111242
Max. power per channel 500 W 500 W 500 W 300 W 300 W 500 W
Supply voltage ±100 V ±100 V ±100 V ±100 V ±100 V ±200 V
Gate sink/source current 2.0/2.0 A 1.2/1.0 A 1.2/1.0 A 0.6/0.5 A 0.6/0.5 A 0.6/0.5 A
Features Over-current protection ✓✓✓✓✓✓
Over-current flag ✓
PWM input ✓ ✓
Floating input ✓✓✓✓✓✓
Dead time ✓✓✓✓✓
Protection control logic ✓✓✓✓✓✓
PWM controller ✓✓✓✓
Clip detection ✓
Click noise reduction ✓✓✓✓
Temperature sensor input ✓ ✓
Thermal shutdown ✓
Clock input ✓ ✓
Package type 16-pin SOIC narrow 16-pin SOIC narrow 16-pin SOIC narrow MLPQ48 MLPQ48 MLPQ32
Evaluation boards - IRAUDAMP4A,
IRAUDAMP6
IRAUDAMP5,
IRAUDAMP7S,
IRAUDAMP7D,
IRAUDAMP9
IRAUDAMP10 IRAUDAMP8 EVAL_IRAUDAMP23
CoolGaN 400 V e-mode HEMTs Recommended audio driver IC
Package
PG-DSO-20-87 (top-side cooling) HSOF-8-3 (TO-leadless)
IRS20957S
Pmax
Up to 500 W Up to 200 W
RDS(on) max.
70 m
Ω
70 m
Ω
Part number
IGOT40R070D1 IGT40R070D1
Output power [W] Recommended driver IC Speaker resistance
2 Ω 4 Ω 8 Ω
150 IRS2093S* IRFB4019 IRFB4019 IRFI4020H
200
IRS2052M*
IRFB5615 IRFB4019 IRFI4020H
300
IRS2092S**
IRFB4228 IRFB4227 IRFB4229
500
IRS20957S**
IRFB4228 IRFB4227 IRFB4229
750 IRFB4227 IRFB4229
1000 IRFP4668 IRFB4229 x 2
Output power [W] Recommended driver IC Speaker resistance
2 Ω 4 Ω 8 Ω
150 IRS2093S* IRF6645 IRF6665 IRF6775
200
IRS2052M*
IRF6646 IRF6775 IRF6775
300
IRS2092S**
IRF6644 IRF6775 IRF6785
500
IRS20957S**
IRF6643 IRF6641
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
17
Multiphase DC-DC system solution
Server/storage
Server-Intel/IBM/AMD/ARM
Workstation
Storage
High-end consumer
High-end desktop
Notebook
Gaming
Graphic
Industrial PC
Comms
Datacom
Comms core
SOHO SAN
Edge access
Telecom
Base station
(macro + distributed)
Powered ICs
Server chip set
Voltage
VCCIO
VMCP
Vcore
Vmem
ASIC
ASSP
FPGA
FPGAs (~0.5–3.3 V) Networking SoCs
and ASICs, FPGAs
Multi-core processors
Ethernet switch ICs
PC chip set
Vcore
Graphics
ASICs (~1.0 V)
ASSPs (~1.0 V)
10-30 A
single-phase (multi-rail)
>30 A
multi-phase/rail
www.infineon.com/dataprocessing
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
16
17
DC-DC
DC-DC enterprise power solution for
data processing applications
Multiphase and point-of-load DC-DC solution
An industry leader in digital power management, Infineon delivers solutions for the next generation server,
communi
cation, storage and client computing applications. Infineon oers a complete portfolio, including digital PWM
controllers,
integrated power stages, integrated point-of-load (POL), MOSFET drivers, power blocks and discrete
MOSFETs. These proven technologies oer full flexibility to our customers to optimize a complete system solution for
space, performance, ease of design and cost to meet critical design goal objectives. In addition, our latest soware
tools help simplify design, shorten design cycles and improve time-to-market.
Benefit Advantage
Best-in-class eiciency Digital controller and power stage provide industry‘s best eiciency of more than 95 percent
Support all major VID interface and control schemes Intel SVID, AMD SVI2, NVIDIA PWM VID, Parallel VID (up to 8-bit) , PMBus™ Rev1.3, AVS Bus (PMBus™ Rev1.3)
Complete system solution A broad portfolio of fully integrated point-of-load, integrated power stage and digital controller solutions in addition to
discrete drivers and MOSFETs oers full flexibility to optimize complete system solutions requiring 1 A to 300 A+, single
output/single-phase to multiple output/multi-phase
Digital controller flexibility The industry’s benchmark full featured 8-phase, multiple output, flexible configuration digital controllers
Ease of design GUI-based optimization and configuration significantly reduces design cycle time
Smallest solution size High density packaging and unique control schemes enable reduced external component count and overall board space
CPU, GPU, DDR
AC adapters
Battery
charger
Chip set, I/O,
other peripheral lo
ads
OptiMOS™
OptiMOS™
OptiMOS™
DC-DC
PWM
controller
www.infineon.com/dataprocessing
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
17
Multiphase DC-DC system solution
Server/storage
Server-Intel/IBM/AMD/ARM
Workstation
Storage
High-end consumer
High-end desktop
Notebook
Gaming
Graphic
Industrial PC
Comms
Datacom
Comms core
SOHO SAN
Edge access
Telecom
Base station
(macro + distributed)
Powered ICs
Server chip set
Voltage
VCCIO
VMCP
Vcore
Vmem
ASIC
ASSP
FPGA
FPGAs (~0.5–3.3 V) Networking SoCs
and ASICs, FPGAs
Multi-core processors
Ethernet switch ICs
PC chip set
Vcore
Graphics
ASICs (~1.0 V)
ASSPs (~1.0 V)
10-30 A
>30 A
www.infineon.com/dataprocessing
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
19
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
18
19
DC-DC enterprise power solution for
data processing applications
Integrated point-of-load converters
Infineon’s point-of-load converters integrate a PWM controller, driver and MOSFETs into a small PQFN package for
ease of use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies to deliver
ultracompact layouts and and the smallest bill of materials. A PMBus™ interface is available for monitoring and control
in systems that use advanced CPUs, ASICs and FPGAs.
DC-DC IPOL portfolio
Digital interface IPOL Analog interface IPOL
Block diagram
POL
IR38XXX
POL
IR38XXX
POL
IR38XXX
I/O I/O
Core
Memory
+
+
+
+
0.9 V
1.5 V
1.8 V
12 V
PMBus™
CPU/ASIC/FPGA/DSP
Key features
› Input voltage range
4.5-21 V
› Output current 1-35 A
› Operating temperature
range of -40 to 125°C
Key benefits
› Integrated controller,
driver, MOSFETs for small
footprint
› High eiciency MOSFETs
and thermally enhanced
packages for operation
without heat sinks
DC-DC
www.infineon.com/dataprocessing
I²C PMBus™, telemetry, margin, faults, SVID PVID
Digital control/configuration, telemetry and diagnostic
Part number Max. current
[A]
Package size
[mm]
Max. Vin Max. fsw Distinctive
features
IR38064 35 5 x 7 21 V 1500 KHz PMBus™
IR38063 25 5 x 7 21 V 1500 KHz
IR38062 15 5 x 7 21 V 1500 KHz
IR38060 6 5 x 6 16 V 1500 KHz
IR38163 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38165 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38363 15 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38365 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38263 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
PVID + PMBus™
IR38265 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID
IR38164 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™,
enhanced Imon
IRPS5401 4+4+2+2+0.5 7 x 7 14 V 1500 KHz 5 output PMIC,
PMBus™
„Performace“ voltage mode PWM
Ultralow jitter and noise, high accuracy and low ripple
Part number Max. current
[A]
Package size
[mm]
Max. Vin Max. fsw Distinctive
features
IR3883 3 3 x 3 14 V 800 KHz Constant-on-time
IR3823 3 3.5 x 3.5 21 V 1500 KHz 3 so start
IR3897 4 4 x 5 21 V 1500 KHz DDR tracking and
analog voltage
margin/AVSO
IR3898 6 4 x 5 21 V 1500 KHz
IR3899 9 4 x 5 21 V 1500 KHz
IR3894 12 5 x 6 21 V 1500 KHz
IR3895 16 5 x 6 21 V 1500 KHz
IR3826 23 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3826A 16 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3448 16 5 x 6 21 V 1500 KHz True dierential
remote sensing for
accuracy and ther-
mally enhanced Cu
clip package
IR3847 25 5 x 6 21 V 1500 KHz
IR3846 35 5 x 7 21 V 1500 KHz
IR3891 4+4 5 x 6 21 V 1500 KHz Dual output for
density and
out-of-phase
for less input
capacitor
IR3892 6+6 5 x 6 21 V 1500 KHz
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
19
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
21
VIN
Primary inverter
full-bridge
Gate driver
Control unit
Secondary-side
rectification
DC output
for welding
Auxiliary
power supply
PFC
(optional)
AC input
Gate
driver
IC
Stage Topology Voltage class Technology/product family Selection/benefit
PFC AC-DC Boost converter/switch 650V TRENCHSTOP™ 5 WR5 Cost/performace
Boost converter/switch 650V TRENCHSTOP™ 5 S5 Eiciency and ease of use
Boost converter/switch 650V TRENCHSTOP™ 5 H5 Best eiciency
Boost converter/switch 1200V TRENCHSTOP™ IGBT6 Eiciency
Low-side gate driver 25 V Single low-side driver 1ED44176N01F
NEW! OCP, fault and enable
function in DSO-8
Low-side gate driver 25 V Dual low-side driver IRS4427S Rugged and reliable in DSO-8
Low-side gate driver 25 V Single low-side driver IRS44273L Rugged and reliable in
SOT23-5
Inverter DC-DC Two transistor forward 650V TRENCHSTOP™ 5 WR5 Cost/performace
Two transistor forward 650V Rapid 1 diode Eiciency
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 WR5 Cost/performace
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 S5 Eiciency and ease of use
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 H5 Best eiciency
Full-bridge 1200V TRENCHSTOP™ IGBT6 Eiciency
DC-AC Al/Mg welding
secondary inverter
650V TRENCHSTOP™ 5 L5
Low VCE(sat)
Eiciency
DC-DC / DC-AC
Single high-side gate driver
1200V EiceDRIVER™ galvanic isolated 1EDI05I12AF 1 A output current, separate
sink/source outputs
Single high-side gate driver
1200V EiceDRIVER™ galvanic isolated 1EDI60N12AF 10 A output current, separate
sink/source outputs
Secondary side
rectification
DC-DC Output rectifier 650V Rapid 1 diode Eiciency
Output rectifier 650V Rapid 1 diode – common cathode Eiciency
Controller Auxiliary
power control
Flyback control 800 V CoolSET™ F5 Recommendation
Boost converter - XMC1000 Flexibility
Microcontroller supply
Linear voltage regulator
up to 20V IFX54211 Eiciency
www.infineon.com/welding
Infineon’s product recommendation for industrial welding
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
20
21
Industrial welding
Industrial welding*
High eiciency, easy design and cost competitive solutions
Discrete IGBTs are used in small inverterized single-phase handheld welders with current output from 120 to 200 A
and three-phase industrial welding machines with current output up to 280 A. Infineon oers a wide product range to
address key industry trends.
Price competitive 650V TRENCHSTOP™ 5 WR5 series has been specifically developed for the low power single-phase
welding machine market. The TRENCHSTOP™ 5 WR5 oers low switching losses coupled with low conduction losses to
provide eiciency to customers and outstanding thermal performance.
For the best-in-class performance, where customers strive for dierentiation, the 650V TRENCHSTOP™ 5 H5 series
oers outstanding eiciency for optimized, low inductance designs.
The new high speed, so switching 650V TRENCHSTOP™ 5 S5 series have so and smooth switching behavior with
no tail current, while keeping very competitive switching performance. The TRENCHSTOP™ 5 S5 series can be used as
plug-and-play replacement of previous generations of Infineon’s IGBTs. The low VCE(sat) 650V TRENCHSTOP™ 5 L5 series
is an excellent solution for secondary inverter AC output welding machines used for aluminum (Al) or magnesium (Mg)
welding.
For three-phase welding inverters, the 1200V HighSpeed 3 family keeps leading market position in >20 kHz designs
with best performance/cost trade-o and highest reliability. For medium switching frequency designs, 1200 V
TRENCHSTOP™ IGBT6 provides the best eiciency performance with a unique combination of low conduction losses
of 1.85 V VCE(sat) and the lowest switching losses.
Vin
Double switch forward topology
Single-phase inverters
Gate driver
Control unit
Auxiliary
power supply
Secondary-side
rectification
PFC
(optional)
DC output
for welding
AC input
Gate
driver
IC
Typical topologies for inverter welding machine < 280 A
www.infineon.com/welding
*(MMA/TIG < 280 A)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
21
VIN
Primary inverter
full-bridge
Gate driver
Control unit
Secondary-side
rectification
DC output
for welding
Auxiliary
power supply
PFC
(optional)
AC input
Gate
driver
IC
Stage Topology Voltage class Technology/product family Selection/benefit
PFC AC-DC Boost converter/switch 650V TRENCHSTOP™ 5 WR5 Cost/performace
Boost converter/switch 650V TRENCHSTOP™ 5 S5 Eiciency and ease of use
Boost converter/switch 650V TRENCHSTOP™ 5 H5 Best eiciency
Boost converter/switch 1200V TRENCHSTOP™ IGBT6 Eiciency
Low-side gate driver 25 V Single low-side driver 1ED44176N01F
NEW! OCP, fault and enable
function in DSO-8
Low-side gate driver 25 V Dual low-side driver IRS4427S Rugged and reliable in DSO-8
Low-side gate driver 25 V Single low-side driver IRS44273L Rugged and reliable in
SOT23-5
Inverter DC-DC Two transistor forward 650V TRENCHSTOP™ 5 WR5 Cost/performace
Two transistor forward 650V Rapid 1 diode Eiciency
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 WR5 Cost/performace
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 S5 Eiciency and ease of use
Full-bridge/half-bridge 650V TRENCHSTOP™ 5 H5 Best eiciency
Full-bridge 1200V TRENCHSTOP™ IGBT6 Eiciency
DC-AC Al/Mg welding
secondary inverter
650V TRENCHSTOP™ 5 L5
Low VCE(sat)
Eiciency
DC-DC / DC-AC
Single high-side gate driver
1200V EiceDRIVER™ galvanic isolated 1EDI05I12AF 1 A output current, separate
sink/source outputs
Single high-side gate driver
1200V EiceDRIVER™ galvanic isolated 1EDI60N12AF 10 A output current, separate
sink/source outputs
Secondary side
rectification
DC-DC Output rectifier 650V Rapid 1 diode Eiciency
Output rectifier 650V Rapid 1 diode – common cathode Eiciency
Controller Auxiliary
power control
Flyback control 800 V CoolSET™ F5 Recommendation
Boost converter - XMC1000 Flexibility
Microcontroller supply
Linear voltage regulator
up to 20V IFX54211 Eiciency
www.infineon.com/welding
Infineon’s product recommendation for industrial welding
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
23
Recommended LED driver products
LED lighting
www.infineon.com/lighting
Functional block Product type IC product family MOSFET technology Voltage class
PFC stage PFC IRS2505 CoolMOS™ P7 600/700/800/950 V 1)
Main stage PFC + LCC (constant current)
PFC + LLC (constant current)
ICL5102 2) CoolMOS™ P7 (up to 600 mΩ) 600 V/650 V
CoolMOS™ CE (above to 600 mΩ) 600 V
PFC + flyback (dual stage) XDPL8220 3) / XDPL8221 2) CoolMOS™ P7 800 V/950 V
PFC/flyback
(single-stage constant voltage) XDPL8105 CoolMOS™ P7 800 V/950 V
PFC/flyback (single-stage constant voltage) XDPL8218 CoolMOS™ P7 800 V/950 V
Buck / linear solutions Secondary buck (single-channel)
Secondary buck (multichannel)
ILD6150 / ILD8150 Integrated 60 V/80 V
XMC1300 / XMC1400 1) OptiMOS™
100 V/150 V/ 200 V/250 V/ 300 V
Secondary linear BCR601 OptiMOS™ 75 V/100 V
Synchronous rectification Synchronous rectification controller IR1161 / IR11688 OptiMOS™ 100 V/150 V/200 V
Dimming 0-10 V dimming interface IC CDM10V - -
CDM10VD - -
Hardware based security OPTIGA™ OPTIGA™ Trust - -
MCU XMC™ microcontroller XMC1100 - -
Sensors XENSIV™ radar sensor IC BGT24LTR11 - -
LED driver with constant voltage output and linear/switch mode LED driver ICs
AC-line
input Synchronous
rectification
LED string
typ.: >300 mA
Main
stage
PFC stage
LED module
Switch mode
LED driver IC
Linear LED
driver IC
typ.: 10 mA-500 mA
Linear/switch mode LED driver IC product portfolio
Functional block Topology IC product family MOSFET technology Voltage class
Linear LED driver IC Linear BCR400 series Integrated (extra transistor for BCR450) -
BCR602 External N-channel MOSFET 75 V / 100 V
Switch mode LED driver IC Buck
ILD6000 series Integrated -
XMC1300/XMC1400* OptiMOS™ 100 V/150 V/200 V/250 V/ 300 V
Buck/boost ILD1151 OptiMOS™ 60 V/100 V
1) 700 V, 800 V and 950 V CoolMOS™ P7 are optimized for PFC and flyback topologies. 600 V CoolMOS™ P7 is suitable for hard as well as so switching topologies (flyback, PFC and LLC)
2) PFC and resonant combo controllers
3) PFC and flyback combo controllers
* Including communication
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
22
23
LED lighting
LED lighting
Solutions for cost sensitive applications as well as for smart lighting
At Infineon, we focus on supplying tailored products for LED drivers, LED strips, horticultural, and smart lighting.
Our broad portfolio of tailored products and solutions for LED lighting comprises LED driver ICs, MOSFETs, and
microcontrollers suited for LED drivers as well sensors and dedicated ICs for secure communication. In addition to
oering products of proven quality, a competent global lighting team supports our lighting customers in designing LED
lighting products and systems in collaboration with our channel partners.
Key trends and challenges in LED lighting and our oering:
› Light quality and human-centric light
– No current ripple by using two stage topologies (i.e. ICL5102, XDPL8221, XDPL8218, BCR601)
– Easy implementation of tunable white with a lighting dedicated peripheral –
brightness and color control unit-BCCU (i.e. XMC1300)
› Designing smaller and flatter LED drivers
– Integrating up to 25 discrete components in one 0-10 V dimming interface IC (i.e. CDM10V)
– High voltage SJ MOSFETs in small and cost-eective SOT-223 package
› Smart lighting enabled by radar sensors
– Reliable presence detection and large area coverage up to 300 m2
– Integrated XENSIV™ 24 GHz radar transceiver eliminates the need on trimming and handling component tolerances
– Ready-to-use module solutions with our radar partners (i.e. K -LD 2 from RF beam and INS-Serie from InnoSent),
based on our XENSIV™ radar sensor IC (BGT24LTR11)
www.infineon.com/lighting
LED drivers
AC-line
input
MCU
communication
intellegent control
Hardware-based
security
Wired/wireless
communication
0-10 V
dimming interface
Sensors
hub
LED module
Dimmer
PFC stage Main stage
Combo IC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
23
Recommended LED driver products
LED lighting
www.infineon.com/lighting
Functional block Product type IC product family MOSFET technology Voltage class
PFC stage PFC IRS2505 CoolMOS™ P7 600/700/800/950 V 1)
Main stage PFC + LCC (constant current)
PFC + LLC (constant current)
ICL5102 2) CoolMOS™ P7 (up to 600 mΩ) 600 V/650 V
CoolMOS™ CE (above to 600 mΩ) 600 V
PFC + flyback (dual stage) XDPL8220 3) / XDPL8221 2) CoolMOS™ P7 800 V/950 V
PFC/flyback
(single-stage constant voltage) XDPL8105 CoolMOS™ P7 800 V/950 V
PFC/flyback (single-stage constant voltage) XDPL8218 CoolMOS™ P7 800 V/950 V
Buck / linear solutions Secondary buck (single-channel)
Secondary buck (multichannel)
ILD6150 / ILD8150 Integrated 60 V/80 V
XMC1300 / XMC1400 1) OptiMOS™
100 V/150 V/ 200 V/250 V/ 300 V
Secondary linear BCR601 OptiMOS™ 75 V/100 V
Synchronous rectification Synchronous rectification controller IR1161 / IR11688 OptiMOS™ 100 V/150 V/200 V
Dimming 0-10 V dimming interface IC CDM10V - -
CDM10VD - -
Hardware based security OPTIGA™ OPTIGA™ Trust - -
MCU XMC™ microcontroller XMC1100 - -
Sensors XENSIV™ radar sensor IC BGT24LTR11 - -
LED driver with constant voltage output and linear/switch mode LED driver ICs
AC-line
input Synchronous
rectification
LED string
typ.: >300 mA
Main
stage
PFC stage
LED module
Switch mode
LED driver IC
Linear LED
driver IC
typ.: 10 mA-500 mA
Linear/switch mode LED driver IC product portfolio
Functional block Topology IC product family MOSFET technology Voltage class
Linear LED driver IC Linear BCR400 series Integrated (extra transistor for BCR450) -
BCR602 External N-channel MOSFET 75 V / 100 V
Switch mode LED driver IC Buck
ILD6000 series Integrated -
XMC1300/XMC1400* OptiMOS™ 100 V/150 V/200 V/250 V/ 300 V
Buck/boost ILD1151 OptiMOS™ 60 V/100 V
1) 700 V, 800 V and 950 V CoolMOS™ P7 are optimized for PFC and flyback topologies. 600 V CoolMOS™ P7 is suitable for hard as well as so switching topologies (flyback, PFC and LLC)
2) PFC and resonant combo controllers
3) PFC and flyback combo controllers
* Including communication
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
25
Induction cooking
Resonant-switching applications such as induction cooktops and inverterized microwave ovens have unique system
requirements. The consumer marketplace demands them to be cost-eective, energy eicient and reliable. To achieve these
goals, designers need solutions that are developed specifically for these applications.
Infineon’s RC discrete IGBTs were developed for resonant switching with a monolithically integrated reverse conducting
diode. With this technology leadership and a broad portfolio of devices from 650 to 1600V, Infineon is the market leader and
provides the industry benchmark performance in terms of switching and conduction losses.
The latest RC-H5 family, previously oered with blocking voltage of 1200 V and 1350 V in a wide current range from 20 to 40 A,
is now completed with the addition of a new 30 A 1600 V IGBT.
The TRENCHSTOP™ Feature IGBT protected series (protected IGBT) is a new device in the IGBT portfolio for induction heating
application, which adds new functionality to standard discrete IGBTs. The innovative protected IGBT combines a 20 A 1350 V
IGBT in RC-H5 technology with a unique protecting gate driver IC in a TO-247 6-pin package.
The RC-E family is cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant
applications. This new family oers Infineon’s proven quality in RC IGBTs with the best price-performance ratio and ease of use.
Infineon also oers a range of complementary products, such as low-side gate drivers and high voltage level-shi gate drivers
which can be used with the IGBTs, as well as in the central control and power supply subsystems of induction cooking appliances.
Induction heating Topology Voltage class Technology/product family Selection/benefit
DC-AC Series-resonant half-bridge 650V RC-H5 Recommendation
Quasi-resonant single switch 1100V RC-H3 Recommendation
Quasi-resonant single switch 1200V RC-H5, RC-E Recommendation
Quasi-resonant single switch 1350 V RC-H5 Recommendation
Quasi-resonant single switch 1600 V RC-H2 Recommendation
Quasi-resonant single switch and protective driver
1350 V RC-H5/protected IGBT Recommendation
Gate driver ICs Single low-side gate driver 25 V 1ED44176N01F, IRS44273L
1ED integrated with OPC, fault and enable functions
Half-bridge gate driver 650 V 2ED2304S06F SOI with integrated bootstrap diode
Single high-side gate driver 1200 V 1EDI40I12AF, 1EDI30I12MF Galvanic isolation, separate sink/source output
Microcontroller 32-bit ARM® Cortex®-M0 - XMC1302 Recommendation
Microcontroller supply Linear voltage regulator Up to 20V IFX54211 Eiciency
AUX Fixed-frequency flyback 700V CoolSET™ F5 Recommendation
Induction heating inverter (current resonance) Induction heating inverter (voltage resonance)
Major home appliance
Highest performance and eiciency for induction cooking
Single switchHalf-bridge
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
V
AC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGBT
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
VAC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGB
T
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
www.infineon.com/homeappliance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
24
25
Air conditioning
Product designers are facing the daunting challenge of delivering smaller, smarter, more powerful and more energy-eicient
appliances. Based on industry-leading technology and manufacturing expertise, Infineon’s line of innovative components for
household appliances meets and exceeds even the most rigorous requirements for reliability and quality. The following block
diagram example of an air conditioning system, together with the product selection table, provides eective recommendation
for engineers selecting the right component for each power management stage inside major home appliances.
Functional block Topology Voltage
class
Technology/product family Selection/benefit
PFC AC-DC
IGBT – PFC CCM (high frequency – SC)
600V HighSpeed 3 Recommendation
IGBT – PFC CCM (low frequency – SC)
600V TRENCHSTOP™ Performance Recommendation
IGBT – PFC CCM (cost competitive – no SC)
650V TRENCHSTOP™ 5 – H5 Recommendation
IGBT – PFC CCM (low losses - SC)
650 V TRENCHSTOP™ IGBT6 Recommendation
IGBT – PFC 600 V TRENCHSTOP™ Advanced Isolation Recommendation
IGBT – PFC (cost competitive - no SC) 650 V TRENCHSTOP™ 5 WR5 Recommendation
MOSFET – PFC CCM 600V CoolMOS™ P7 Reference
Diode – PFC CCM 650V Rapid 1 and Rapid 2 diodes Recommendation
Controller – PFC CCM – ICE2PCS0xG, ICE3PCS0xG Recommendation
IPM – PFC CCM 650 V CIPOS™ Mini PFC interleaved IPM series,
CIPOS™ PFC integrated IPM series
Recommendation
Low-side gate driver IC-PFC 25 V
Single low-side driver 1ED44176N01F
NEW!
OCP, fault and enable function
in DSO-8
Dual low-side driver IRS4427S Rugged and reliable in DSO-8
Single low-side driver IRS44273L Rugged and reliable in SOT23-5
DC-AC IGBT – B6-VSI 650V TRENCHSTOP™ IGBT6 Eiciency
IGBT – B6-VSI 600V RC-Drives Fast Recommendation
MOSFET - B6-VSI 500 V/600 V CoolMOS™ CE Cost/performance
IPM – B6-VSI 600V CIPOS™ Mini Recommendation
Half-bridge gate driver IC 650 V 2ED2304S06F
NEW!
SOI with integrated
bootstrap diode
Half-bridge gate driver ICs 600 V 2EDL05I06PF, 2EDL23I06PJ, IRS2890DS
Integrated bootstrap diode/FET
Three-phase gate driver ICs 600 V 6EDL04I06PT, IR2136S, 6ED003L06-F2 OCP, fault and enable function
AUX Flyback fixed frequency 700V CoolSET™ F5 Recommendation
Microcontroller/motor control IC 32-bit ARM® Cortex®-M4 - XMC4100/XMC4200 Recommendation
iMOTION™ - IRMCxx motor control IC
(incl. motion control algorithm)
Recommendation
Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211, IFX3008 Eiciency
Communication CAN transceiver - IFX1050, IFX1051, IFX1040 Robustness
Position sensing Angle sensor - TLE5009, TLI5012B Recommendation
Hall switch - TLI496x Recommendation
Major home appliances
Innovative approach for air conditioning
Rectification
Power management
DC
supply
User interface
&
communication
Central control
unit
Gate driver ICs
MCU
AF discretes Sense and monitor Rotor position detection
Driver stage
M
IGBT
Plu
g
www.infineon.com/homeappliance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
25
Induction cooking
Resonant-switching applications such as induction cooktops and inverterized microwave ovens have unique system
requirements. The consumer marketplace demands them to be cost-eective, energy eicient and reliable. To achieve these
goals, designers need solutions that are developed specifically for these applications.
Infineon’s RC discrete IGBTs were developed for resonant switching with a monolithically integrated reverse conducting
diode. With this technology leadership and a broad portfolio of devices from 650 to 1600V, Infineon is the market leader and
provides the industry benchmark performance in terms of switching and conduction losses.
The latest RC-H5 family, previously oered with blocking voltage of 1200 V and 1350 V in a wide current range from 20 to 40 A,
is now completed with the addition of a new 30 A 1600 V IGBT.
The TRENCHSTOP™ Feature IGBT protected series (protected IGBT) is a new device in the IGBT portfolio for induction heating
application, which adds new functionality to standard discrete IGBTs. The innovative protected IGBT combines a 20 A 1350 V
IGBT in RC-H5 technology with a unique protecting gate driver IC in a TO-247 6-pin package.
The RC-E family is cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant
applications. This new family oers Infineon’s proven quality in RC IGBTs with the best price-performance ratio and ease of use.
Infineon also oers a range of complementary products, such as low-side gate drivers and high voltage level-shi gate drivers
which can be used with the IGBTs, as well as in the central control and power supply subsystems of induction cooking appliances.
Induction heating Topology Voltage class Technology/product family Selection/benefit
DC-AC Series-resonant half-bridge 650V RC-H5 Recommendation
Quasi-resonant single switch 1100V RC-H3 Recommendation
Quasi-resonant single switch 1200V RC-H5, RC-E Recommendation
Quasi-resonant single switch 1350 V RC-H5 Recommendation
Quasi-resonant single switch 1600 V RC-H2 Recommendation
Quasi-resonant single switch and protective driver
1350 V RC-H5/protected IGBT Recommendation
Gate driver ICs Single low-side gate driver 25 V 1ED44176N01F, IRS44273L
1ED integrated with OPC, fault and enable functions
Half-bridge gate driver 650 V 2ED2304S06F SOI with integrated bootstrap diode
Single high-side gate driver 1200 V 1EDI40I12AF, 1EDI30I12MF Galvanic isolation, separate sink/source output
Microcontroller 32-bit ARM® Cortex®-M0 - XMC1302 Recommendation
Microcontroller supply Linear voltage regulator Up to 20V IFX54211 Eiciency
AUX Fixed-frequency flyback 700V CoolSET™ F5 Recommendation
Induction heating inverter (current resonance) Induction heating inverter (voltage resonance)
Major home appliance
Highest performance and eiciency for induction cooking
Single switchHalf-bridge
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
V
AC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGBT
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
AUX
MCU
Lres
Lf
RC-IGBT
Cbus
CK2
CK1
VAC
Cres
2
Cres
2
Lf
Cbus
VAC
AUX
MCU
RC-IGB
T
Lres
Cres
RC-IGBT
Gate driver ICs
Gate driver ICs
www.infineon.com/homeappliance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
27
Benefits Oer
Development eort and cost reduction
› With no or little experience in motor control, customers can implement the iMOTION™ motor control IC and take flight
› Project development can be reduced up to 30 percent by using reference designs and the DAVE™ platform for microcontroller programming
Authentication › Infineon’s solutions enable authentication of components connected to the system
› Guaranteed safety and protection of the product, avoiding liability
Ease-of-precision control for
flight and data › Through the benefits of multifunction sensors, the user can experience an easy, stable, smooth and accurate control of the multicopter
› Closed loop control of gimbal motor, sensors enhanced camera stability and data transmission when recording video
Longer flight times › The highly eicient components and eective flight control can make the multicopter lighter, which results in longer flight time
Collision avoidance › XENSIV™ 24 GHz radar sensors have the capability of detecting the proximity of objects such as trees, buildings, etc.
Altitude stabilization
› The miniaturized digital barometric air pressure sensors based on capacitive technology guarantee high precision during temperature changes
Broader portfolio › Infineon can provide all the necessary critical semiconductor components for multicopters
Fast time-to-market › A complete eco-system of simulations, documentation and demoboard solutions enables a faster time-to-market
Multicopter
Infineon oers a comprehensive portfolio to address a broad range of multicopters.
Find more information at www.infineon.com/multicopter
www.infineon.com/multicopter
Flight control ESC
Microcontroller Sensor DC-DC module LDO Low noise
amplifer(LNA) SensorMicrocontroller Intelligent power
module
› XMC4000 family
› XMC1000 family
› AURIX™
› XENSIV™ pressure
sensor: DPS310
› XENSIV™ 24 GHz
radar sensor:
BGT24MR
› Current sensor:
TLI4970
› IFX90121ELV50
› IFX91041EJV33
› IFX91041EJV50
› IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› LTE: BGA7H,
BGA7M, BGA7L
› GPS: BGA524N6,
BGA824N6
› Wi-Fi: BFP842ESD,
BFR840L3RHESD,
BFR843L3, etc.
› Hall sensor:
TLI4961, TLV4961
› Angle sensor:
TLI5012B, TLE5009
Security Accessory
authentication Joystick Interface
protection diode LED driver Dual n-channel
power MOSFETs
MOSFET gate
driver
Low voltage
MOSFETs
› OPTIGA™ Trust E
SLS 32AIA
› OPTIGA™ Trust P
SLJ 52ACA
› OPTIGA™ TPM
SLB 96XX
› OPTIGA™ Trust
› SLS 10ERE
› OPTIGA™ Trust B
SLE 95250
› OPTIGA™ Trust X
SLS 32AIA
› 3D magnetic
sensor: TLV493D › ESD102 series › BCR450
› BCR321U
› BCR421U
› IR3742, etc.
› BSC0925ND, etc.
› XMC1300 family
› iMOTION™
IRMCK099
› ePOWER: TLE987x
› IRSM005-800MH
› IRSM836-084MA
› IRS2301S
› 6EDL04N02P
› IRS23365
› PX3517
› OptiMOS™ 5 series
› StrongIRFET™ series
Gimbal control
Microcontrollers Angle sensor LDO CAN transceiver Low voltage
MOSFETs
Dual n-channel
power MOSFETs MOSFET gate driver
› XMC1400 family › TLI5012B
› TLE5009 › IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› HS CAN IFX1050G
› IFX1050GVIO
› 25-30 V OptiMOS™ 5
› 25-30 V StrongIRFET™
› IRFHM8363TRPBF, etc. › IR2101STRPBF, etc.
Charger Battery management
High voltage MOSFETs Low voltage MOSFETs Stand alone
PWM controller Authentication ICs Cell balancing Low voltage MOSFETs
› 600 V CoolMOS™ P7* › 40-80 V OptiMOS™ 5
in TO-220, SuperSO8
› 40-75 V StrongIRFET™
› ICE2QS03G › 30 V OptiMOS™ in SSO8,
S308, DirectFET™
› 30 V StrongIRFET™
› OPTIGA™ Trust B SLE95250 › OptiMOS™ 5 in SuperSO8,
S3O8, DirectFET™
› 40-80 V StrongIRFET™
Solution tree for multicopters
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet, the previous CoolMOS™ CE and P6 series are the preferred series
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
26
27
Multicopter
Reliable and cost-eective solutions to support future design trends
Initially regarded as toys, multicopters are now serious business. From FPV drone racing to the observation of remote
places or even future delivery solutions, entire businesses are emerging around the design, supply, and the use of
multicopters. The major dierentiator between toy drones and professional multicopters is the complexity of the
control system. In professional applications, multicopters must provide a useful function on top of mere flying.
Most oen, this is a vision system that requires video processing, gimbal control, and other functionalities which are
integrated into the control system. With great development progress in the field of data processing, navigation and
control, the overall system performance is determined from reliable and eicient power management.
Multicopter solutions from Infineon
Infineon’s comprehensive portfolio of high quality products allows designers to rapidly design, develop, and
deploy systems that address the ever more demanding needs of today’s customers. We oer a near system
solution – everything from XMC™ microcontrollers, to iMOTION™ motor control ICs, to magnetic sensors and many
other cutting-edge technologies – with the exception of one commodity, an IMU (inertial measurement unit) for
existing solutions. In the very fast growing multicopter market, energy eiciency and reliability are becoming more
important. Camera applications, autonomous flying and sophisticated onboard equipment are pushing the limits of
power management and reliability. With increased adoption comes increased regulation and the multicopter itself
needs to be capable of being piloted in a safe and well-controlled manner. Being a recognized leader in automotive
and industrial power electronic systems, Infineon oers high quality system solutions for the next generation of
multicopters and enables customers to achieve a higher degree of innovation and dierentiation.
Overview of the main electronic subsystems of a typical multicopter design
Multicopter
www.infineon.com/multicopter
Current sensing
Gate driver
3-phase
inverter
XMC4000
microcontroller
and
digital control ICs
M
Power management
Battery
management
Authentication
LED
Gimbal
XMC1400
microcontroller
Video camera
Silicon microphones
CAN
USB
ESD
2.4/5.0 GHz
Wireless
LTE/GPS
24 GHz
Radar sensor
Pressure Sensor
Authentication
& remote control
M
Security
Inertial measurement unit
(IMU)
3-axis gyroscope
3-axis accelerometer
3-axis magnetometer
DC-DC
LDO
Electronic speed
controller
IRMCK099 / XMC1300
microcontroller
Yaw
Motor control
M
I2C/SPI
Position sensor
Position sensor
Roll
motor control
Pitch
motor control
Position sensor
M
Application processor
and wireless Interface
e.g. Raspberry PI Zero
I2C/SPI
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
27
Benefits Oer
Development eort and cost reduction
› With no or little experience in motor control, customers can implement the iMOTION™ motor control IC and take flight
› Project development can be reduced up to 30 percent by using reference designs and the DAVE™ platform for microcontroller programming
Authentication › Infineon’s solutions enable authentication of components connected to the system
› Guaranteed safety and protection of the product, avoiding liability
Ease-of-precision control for
flight and data › Through the benefits of multifunction sensors, the user can experience an easy, stable, smooth and accurate control of the multicopter
› Closed loop control of gimbal motor, sensors enhanced camera stability and data transmission when recording video
Longer flight times › The highly eicient components and eective flight control can make the multicopter lighter, which results in longer flight time
Collision avoidance › XENSIV™ 24 GHz radar sensors have the capability of detecting the proximity of objects such as trees, buildings, etc.
Altitude stabilization
› The miniaturized digital barometric air pressure sensors based on capacitive technology guarantee high precision during temperature changes
Broader portfolio › Infineon can provide all the necessary critical semiconductor components for multicopters
Fast time-to-market › A complete eco-system of simulations, documentation and demoboard solutions enables a faster time-to-market
Multicopter
Infineon oers a comprehensive portfolio to address a broad range of multicopters.
Find more information at www.infineon.com/multicopter
www.infineon.com/multicopter
Flight control ESC
Microcontroller Sensor DC-DC module LDO Low noise
amplifer(LNA) SensorMicrocontroller Intelligent power
module
› XMC4000 family
› XMC1000 family
› AURIX™
› XENSIV™ pressure
sensor: DPS310
› XENSIV™ 24 GHz
radar sensor:
BGT24MR
› Current sensor:
TLI4970
› IFX90121ELV50
› IFX91041EJV33
› IFX91041EJV50
› IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› LTE: BGA7H,
BGA7M, BGA7L
› GPS: BGA524N6,
BGA824N6
› Wi-Fi: BFP842ESD,
BFR840L3RHESD,
BFR843L3, etc.
› Hall sensor:
TLI4961, TLV4961
› Angle sensor:
TLI5012B, TLE5009
Security Accessory
authentication Joystick Interface
protection diode LED driver Dual n-channel
power MOSFETs
MOSFET gate
driver
Low voltage
MOSFETs
› OPTIGA™ Trust E
SLS 32AIA
› OPTIGA™ Trust P
SLJ 52ACA
› OPTIGA™ TPM
SLB 96XX
› OPTIGA™ Trust
› SLS 10ERE
› OPTIGA™ Trust B
SLE 95250
› OPTIGA™ Trust X
SLS 32AIA
› 3D magnetic
sensor: TLV493D › ESD102 series › BCR450
› BCR321U
› BCR421U
› IR3742, etc.
› BSC0925ND, etc.
› XMC1300 family
› iMOTION™
IRMCK099
› ePOWER: TLE987x
› IRSM005-800MH
› IRSM836-084MA
› IRS2301S
› 6EDL04N02P
› IRS23365
› PX3517
› OptiMOS™ 5 series
› StrongIRFET™ series
Gimbal control
Microcontrollers Angle sensor LDO CAN transceiver Low voltage
MOSFETs
Dual n-channel
power MOSFETs MOSFET gate driver
› XMC1400 family › TLI5012B
› TLE5009 › IFX1117ME
› IFX54441EJV
› IFX1763XEJV33
› HS CAN IFX1050G
› IFX1050GVIO
› 25-30 V OptiMOS™ 5
› 25-30 V StrongIRFET™
› IRFHM8363TRPBF, etc. › IR2101STRPBF, etc.
Charger Battery management
High voltage MOSFETs Low voltage MOSFETs Stand alone
PWM controller Authentication ICs Cell balancing Low voltage MOSFETs
› 600 V CoolMOS™ P7* › 40-80 V OptiMOS™ 5
in TO-220, SuperSO8
› 40-75 V StrongIRFET™
› ICE2QS03G › 30 V OptiMOS™ in SSO8,
S308, DirectFET™
› 30 V StrongIRFET™
› OPTIGA™ Trust B SLE95250 › OptiMOS™ 5 in SuperSO8,
S3O8, DirectFET™
› 40-80 V StrongIRFET™
Solution tree for multicopters
* If the necessary package/RDS(on) combination is not available in the new CoolMOS™ P7 series yet, the previous CoolMOS™ CE and P6 series are the preferred series
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
29
Infineon’s leading portfolio of best-fit, ready-to-use semiconductor solutions empowers you to create innovative
smart home applications that meet both current and future demands. You can count on our components to be smart,
secured and energy eicient. In our one-stop shop, you will find all components and solutions required for your
project. Furthermore, our products are easy to integrate into your designs.
As you forge new, unexplored territory in the smart home realm, our in-depth know-how of our components and
their potential in smart homes and home automation systems enable us to support you through and through. At the
cutting-edge of key smart home technologies, we are in the position to guide you through this exciting new market
while you explore new opportunities and business models. Especially those new to smart homes will appreciate our
easy-to-use smart home demo and our basic oering of solutions.
How Infineon’s oering enhances your project
www.infineon.com/smarthome
Contextual sensitivity with
market-leading accuracy and
reliability. For more natural,
seamless interaction between
humans, machines and the
surroundings.
Advanced
sensing
Ensure optimized system
performance thanks to our deep
system understanding and
strong processing and steering
know-how. The result: an
excellent user experience.
Cross-
application
control
Our innovative power
electronics technologies allow
users to save energy and run
applications at a market-leading
low energy level. It’s the basis
for real green smart homes.
Eicient
power
management
The right, easy to implement
security solutions for smart,
always secured homes. We meet
your design’s evolving security
needs without compromising on
convenience.
Trusted
security
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
28
29
Smart home
Smart home
Smartifying homes the secured way
How does a smart home dier from a regular home? A smart home is equipped with technologies that make our lives
more convenient and energy eicient. Today, the growing range of technologies encompasses smart home appliances,
mobile devices and home automation systems, many of which are interconnected. But being ‘smart’ in this sense
requires appliances and systems fitted with the right semiconductor solutions. They empower smart appliances,
devices and systems to make sense of their environment and current situation. Working together, sensors, controllers
and actuators enable members of a smart home to properly collect, interpret and process real-time data, then trigger
the appropriate action or response. In an age of mounting security threats, security solutions keep all activities and
system secured and out of harm’s way.
From intelligent lighting control to optimized energy consumption, each smart home function depends on intelligent
semiconductors. As this rapidly changing field continues to evolve and mature, having a reputable and reliable partner
in smart home semiconductor technologies such as Infineon makes all the dierence.
Benefit from our smart home expertise
Smart home security
Smart home appliances
Surveillance and detection
Smart air conditioning Data privacy Smart lighting
www.infineon.com/smarthome
Our in-depth system know-how coupled with
our market expertice means you get application
specific solutions that are best in class
Unparalleled system
knowledge
Lasting reliability
Easy-to-integrate solutions We enable you to reduce your time-to-market
thanks to easy-to-integrate products and a
strong global support team for your designs.
With a proven track record, our high-quality
products help keep our customers’ business
uncertainty at a minimum.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
29
Infineon’s leading portfolio of best-fit, ready-to-use semiconductor solutions empowers you to create innovative
smart home applications that meet both current and future demands. You can count on our components to be smart,
secured and energy eicient. In our one-stop shop, you will find all components and solutions required for your
project. Furthermore, our products are easy to integrate into your designs.
As you forge new, unexplored territory in the smart home realm, our in-depth know-how of our components and
their potential in smart homes and home automation systems enable us to support you through and through. At the
cutting-edge of key smart home technologies, we are in the position to guide you through this exciting new market
while you explore new opportunities and business models. Especially those new to smart homes will appreciate our
easy-to-use smart home demo and our basic oering of solutions.
How Infineon’s oering enhances your project
www.infineon.com/smarthome
Contextual sensitivity with
market-leading accuracy and
reliability. For more natural,
seamless interaction between
humans, machines and the
surroundings.
Advanced
sensing
Ensure optimized system
performance thanks to our deep
system understanding and
strong processing and steering
know-how. The result: an
excellent user experience.
Cross-
application
control
Our innovative power
electronics technologies allow
users to save energy and run
applications at a market-leading
low energy level. It’s the basis
for real green smart homes.
Eicient
power
management
The right, easy to implement
security solutions for smart,
always secured homes. We meet
your design’s evolving security
needs without compromising on
convenience.
Trusted
security
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
31
Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on the
horizon – the age of robots. Robots are joining the ranks of innovative and disruptive technologies by revolutionizing
traditional habits and processes. Today’s robots are able to identify and navigate their surroundings, work alongside
and even interact with humans and they teach themselves the skills required to complete a new task.
All this would not be possible without semiconductor solutions. Whether in an industrial robot, a cobot, an
automated guided vehicle (AGV) or a service robot, intelligent semiconductors are the key enabler for all major
robotic functions.
Drawing on our insight into all facets of the robotics field, and with a comprehensive portfolio of
power products and sensors on oer, we are able to provide reliable system solutions that address the latest trends in
robotics like artificial intelligence, the Internet of Things, smart home, cloud based services, human machine interface
etc., and add value to nearly every robot design.
Robotics
Superior solutions for industrial and service robotics
www.infineon.com/robotics
www.infineon.com/industrial-robotics
Robotics
In the era of Industry 4.0 and smart
factories, the latest generation of
industrial robots is revolutionizing
traditional manufacturing processes,
thus creating the benefits for
manufactures worldwide, such as
increased productivity and enhanced
cost optimization. Regardless of the
robot’s size, number of axes and
payload, Infineon’s wide product
portfolio has the right solution for
nearly any industrial robot design.
Structural system overview: industrial robot
Industrial robots – achieve greater productivity and optimize costs
Cobots – advance through collaboration
Cobots, or collaborative robots, work outside the limitation of a safety cell, in a direct interaction with real people. This
setup requires a precise set of design features, especially for the sake of workplace safety. With Infineon’s semiconductors
for cobot systems, you benefit from the expertise of an experienced and reliable partner. Our radar and sensor solutions, for
example, provide the tools to uphold even the highest safety standards and allow the robots to leave their formerly fenced
working environment.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
Enabling secured communication for IoT
OPTIGA™ Trust product family
An increasingly connected world enables new services and features leading to new business models. For these services,
high system reliability and data integrity are key necessities. The Internet of Things generates an increased amount of data
due to the proliferation of sensors and actuators that have become available at an attractive cost.
Intelligent lighting systems represent one of the leading applications that enable collection of information that goes
beyond pure lighting functionality. Lighting systems manufacturers are looking into implementing new functions to their
customers such as:
› advanced presence detection including people counting
› sound detection
› pressure and environmental sensing
Collection and processing of that data targets to increase customer value in smart buildings and smart cities. Proliferation
of interconnected nodes poses serious challenge in terms of ensuring that the IoT does not oer backdoors to cybercrimes.
Infineon oers several products that build an “anchor of trust” in order to ensure secure data communication with the
OPTIGA™ Trust product family. In a connected world, the performance and security of the smart IoT systems can be
continuously improved by firmware updates. As an example, a radar system that fulfills a presence detection function
in oice meeting rooms might be enhanced by soware update to count people in meeting rooms in order to optimize
the usage of assets, in this case meeting rooms. The implementation of this firmware update in a secure manner is
fundamental. The update may need to be authenticated to verify its source and the authenticity of the file or may be sent
encrypted to protect the know how included in the update. To do so and prevent unauthorized firmware updates, these
can be sent with a cryptographic signature as encrypted files allowing the receiving system to verify and decrypt the
update before installing it. With Infineon’s OPTIGA™ Trust product family, the keys used for the signature and encryption
are stored in the hardware-based OPTIGA™ security solution, and therefore cannot be easily read out or altered.
Key benefits of OPTIGA™ security
Combining state-of-the-art hardware security controllers with soware
› Reliable turnkey products with a proven track record
› Strong security based on the latest cryptography
› Oering a variety of interfaces to match your system
architecture
› Easy to integrate based on evaluation kits, host code
and reference applets
› Developed and manufactured in certified environment
Application flow for secure soware update
Server sends update to device
Update is signed with
private key (inserted in
development environment)
Update is encrypted
with secret key
Power supply uses OPTIGA™
Trust product to verify
signature with the public key
Update is decrypted with
secret key stored in
OPTIGA™ Trust product
Update file is transferred
from the device to the digital
power supply
File can be installed
www.infineon.com/optiga
30
31
OPTIGA™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
31
Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on the
horizon – the age of robots. Robots are joining the ranks of innovative and disruptive technologies by revolutionizing
traditional habits and processes. Today’s robots are able to identify and navigate their surroundings, work alongside
and even interact with humans and they teach themselves the skills required to complete a new task.
All this would not be possible without semiconductor solutions. Whether in an industrial robot, a cobot, an
automated guided vehicle (AGV) or a service robot, intelligent semiconductors are the key enabler for all major
robotic functions.
Drawing on our insight into all facets of the robotics field, and with a comprehensive portfolio of
power products and sensors on oer, we are able to provide reliable system solutions that address the latest trends in
robotics like artificial intelligence, the Internet of Things, smart home, cloud based services, human machine interface
etc., and add value to nearly every robot design.
Robotics
Superior solutions for industrial and service robotics
www.infineon.com/robotics
www.infineon.com/industrial-robotics
Robotics
In the era of Industry 4.0 and smart
factories, the latest generation of
industrial robots is revolutionizing
traditional manufacturing processes,
thus creating the benefits for
manufactures worldwide, such as
increased productivity and enhanced
cost optimization. Regardless of the
robot’s size, number of axes and
payload, Infineon’s wide product
portfolio has the right solution for
nearly any industrial robot design.
Structural system overview: industrial robot
Industrial robots – achieve greater productivity and optimize costs
Cobots – advance through collaboration
Cobots, or collaborative robots, work outside the limitation of a safety cell, in a direct interaction with real people. This
setup requires a precise set of design features, especially for the sake of workplace safety. With Infineon’s semiconductors
for cobot systems, you benefit from the expertise of an experienced and reliable partner. Our radar and sensor solutions, for
example, provide the tools to uphold even the highest safety standards and allow the robots to leave their formerly fenced
working environment.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
33
Robotics
www.infineon.com/robotics
For the complete portfolio, visit our website.
Functional block Purpose Characteristics Component Type or Family
Power:
-Power supply
-Power factor correction (PFC)
-Charger
-Battery management
Power switches
(0.4-6 kW output power)
25-150 V OptiMOS™
20-75 V StrongIRFET™
P-/N-channel -60 to 20 V Small signal MOSFETs
600-800 V CoolMOS™ P7
600 V CoolMOS™ C7
600 V CoolMOS™ CFD7
600 V CoolGaN™
600 V IGBT HighSpeed 5
PFC power diodes 650 V Schottky diode CoolSiC™
Integrated power stage 800 V CoolSET™
Gate driver ICs 12-100 V IRS2000x
12-1200 V, non-isolated EiceDRIVER™ 1EDN/2EDN
12-1200 V, functional/safe isolation EiceDRIVER™ 1EDI/2ED/2EDF/2EDS
12-1200 V, three-phase EiceDRIVER™ 6ED, 6EDL
Microcontroller ARM® Cortex®-M0 microcontroller XMC1100/XMC1300
ARM® Cortex®-M4 microcontroller XMC4200
Voltage regulators LDO and DCDC switching regulators e.g. IFX1763, IFX90121
Battery authentication Hardware-based, embedded security OPTIGA™ Trust B
Motor control Motor inverter power switches <12 V, <400 W PROFET™
20-60 V StrongIRFET™
60 V SIPMOS™
25-100 V, <1kW OptiMOS™
P-/N-channel MOSFETs ranging from -60 V to 20 V Small signal MOSFETs
600 V, <500 W CoolMOS™ CFD7
650 V, <500 W CoolMOS™ CFD2
600/1200 V, <10 kW TRENCHSTOP™
1200 V, 10-20 kW CoolSiC™
Fully integrated, 600 V, 0.5-5 kW CIPOS™
Fully integrated, 600 V, <20 kW EasyPIM™
Fully integrated, 1200 V, 10-20 kW CoolSiC™ Easy1B
Gate driver ICs 12-100 V IRS2000x
12-1200 V, non-isolated EiceDRIVER™ 1EDN/2EDN
12-1200 V, functional/safe isolation EiceDRIVER™ 1EDI/2ED/2EDF/2EDS
12-1200 V, three-phase EiceDRIVER™ 6ED, 6EDL
Integrated gate driver ICs NovalithIC™
Automotive embedded power ICs TLE986x, TLE987x
Microcontroller ARM® Cortex®-M0 microcontroller XMC1000 microcontroller family
ARM® Cortex®-M4 microcontroller XMC4000 microcontroller family
TriCore™ Safety certified security on-chip AURIX™
Fully integrated motor control ICs iMOTION™
Position & condition sensing XENSIV™ magnetic Hall switches TLx496x
XENSIV™ angle sensor, digital I/F TLE/TLI5012B, TLE5014SP
XENSIV™ angle sensor, analog I/F TLE5009/5109/5309/5501
Sensing:
-Robot sensing
-Environment sensing
-Human machine interface
XENSIV™ 3D magnetic sensor, digital I/F TLV/TLE/TLI493D
XENSIV™ current sensor, digital I/F TLI 4970
XENSIV™ current sensor, analog I/F TLI4971
Object & condition sensing XENSIV™ pressure/temperature sensor, digital I/F DPS310
XENSIV™ 24 GHz radar BGT24MTR11/12, BGT24MR2
XENSIV™ MEMS microphone, analog I/F IM69D120/IM69D130
XENSIV™ ToF 3D imaging @ 38-100k pixel REAL3™ IRS1125C/IRS1645C/IRS2381C
Peripherals:
-WLAN/BT/GPS
-Human machine interface
Audio Class D audio amplifier IR43x1M, IR43x2M
Interface CAN, CAN FD, CAN PD @ 1-5 MBit/s Industrial CAN transceiver
Industrial interface ICs ISOFACE™
LED drivers Driving currents from 10-250 mA Linear dirver ICs BCR3xx, BCR4xx
Support currents from 150 mA to 3A DCDC switch mode ILD4xxx, ILD6xxx
Security and safety
-Motion controller (incl. safety)
-Security controller
Controller TriCore™ Safety certified with security on-chip AURIX™
Sensors Safe angle sensing - dual die structure e.g. TLE5009xxxD
Voltage regulators DCDC voltage regulator 12 V/ 5V or 3.3 V; watchdog,
error monitoring, safe state control, BIST etc.
e.g. TLF35584
Security Hardware-based, embedded security solutions, mutual
authentication, secure communication, key protection,
data signing etc.
OPTIGA™ TPM/Trust B/Trust X
Infineon’s key enabling products for robotics
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
32
33
Robotics
Automated guided vehicles – driving production and logistics forward
How our oering enhances your project
At Infineon you will find ready-to-use semiconductor solutions out of one hand. Our well-thought-out products,
combined with our deep know-how and proven experience, enable you to take your robotics project to the next
level. By providing everything from reliable chargers and eicient power plus battery management, to compact
motor control and indispensable sensors, to unrivalled hardware-based security solutions, our portfolio of leading
semiconductor solutions covers everything you need to leverage the full potential of any robotic system.
www.infineon.com/robotics
www.infineon.com/service-robotics
Automated guided vehicles
(AGVs) are a self-driving force
behind automated manufacturing
processes. Battery-powered systems
oer the highest degree of flexibility
within working environment.
Covering the entire product portfolio
of robotics applications – from
the power supply to motor drives
and sensors for navigation and
environment scanning – Infineon
is equipped to ensure AGVs can
find their way through nearly all
production environments.
Structural system overview: battery-powered AGV
The latest generation of service
robots is ushering in a new level of
assistance and simplicity in homes
and professional environments.
They directly interact with
humans, which introduces
unique challenges from a design
perspective, especially in domestic
environments. Energy eiciency
and long battery life as well as
security aspects and sensing
capabilities are key to user-friendly
and safe designs.
By choosing Infineon, you get a
one-stop semiconductor shop for all
your service robot design needs.
Structural system overview: service robot
Motor
sensing
Motor
sensing
Motor
sensing
Other
motors
Blower/
blade motor
Wheel
motor
Motor
drive
Motor
drive
Motor
drive
Human
machine
interface
WLAN/BT/GPSWLAN/BT/GPS
Main
controller
Security
controller
Power DC-supply (24 V/36 V/48 V/54 V) AUX DC-supply (12 V, 5 V, 3.3 V, …) Central COM bus (Ethernet, CAN, IC, SPI, …)
Drives
110/230 V~
AC grid
Remote control
monitoring
Smartphone/
tablet/computer
AUX supplies
› 12 V
› 5 V, 3.3 V
› Others
Service robot Charger
(can be on board)
Service robots - simplifying everyday life and work
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
33
Robotics
www.infineon.com/robotics
For the complete portfolio, visit our website.
Functional block Purpose Characteristics Component Type or Family
Power:
-Power supply
-Power factor correction (PFC)
-Charger
-Battery management
Power switches
(0.4-6 kW output power)
25-150 V OptiMOS™
20-75 V StrongIRFET™
P-/N-channel -60 to 20 V Small signal MOSFETs
600-800 V CoolMOS™ P7
600 V CoolMOS™ C7
600 V CoolMOS™ CFD7
600 V CoolGaN™
600 V IGBT HighSpeed 5
PFC power diodes 650 V Schottky diode CoolSiC™
Integrated power stage 800 V CoolSET™
Gate driver ICs 12-100 V IRS2000x
12-1200 V, non-isolated EiceDRIVER™ 1EDN/2EDN
12-1200 V, functional/safe isolation EiceDRIVER™ 1EDI/2ED/2EDF/2EDS
12-1200 V, three-phase EiceDRIVER™ 6ED, 6EDL
Microcontroller ARM® Cortex®-M0 microcontroller XMC1100/XMC1300
ARM® Cortex®-M4 microcontroller XMC4200
Voltage regulators LDO and DCDC switching regulators e.g. IFX1763, IFX90121
Battery authentication Hardware-based, embedded security OPTIGA™ Trust B
Motor control Motor inverter power switches <12 V, <400 W PROFET™
20-60 V StrongIRFET™
60 V SIPMOS™
25-100 V, <1kW OptiMOS™
P-/N-channel MOSFETs ranging from -60 V to 20 V Small signal MOSFETs
600 V, <500 W CoolMOS™ CFD7
650 V, <500 W CoolMOS™ CFD2
600/1200 V, <10 kW TRENCHSTOP™
1200 V, 10-20 kW CoolSiC™
Fully integrated, 600 V, 0.5-5 kW CIPOS™
Fully integrated, 600 V, <20 kW EasyPIM™
Fully integrated, 1200 V, 10-20 kW CoolSiC™ Easy1B
Gate driver ICs 12-100 V IRS2000x
12-1200 V, non-isolated EiceDRIVER™ 1EDN/2EDN
12-1200 V, functional/safe isolation EiceDRIVER™ 1EDI/2ED/2EDF/2EDS
12-1200 V, three-phase EiceDRIVER™ 6ED, 6EDL
Integrated gate driver ICs NovalithIC™
Automotive embedded power ICs TLE986x, TLE987x
Microcontroller ARM® Cortex®-M0 microcontroller XMC1000 microcontroller family
ARM® Cortex®-M4 microcontroller XMC4000 microcontroller family
TriCore™ Safety certified security on-chip AURIX™
Fully integrated motor control ICs iMOTION™
Position & condition sensing XENSIV™ magnetic Hall switches TLx496x
XENSIV™ angle sensor, digital I/F TLE/TLI5012B, TLE5014SP
XENSIV™ angle sensor, analog I/F TLE5009/5109/5309/5501
Sensing:
-Robot sensing
-Environment sensing
-Human machine interface
XENSIV™ 3D magnetic sensor, digital I/F TLV/TLE/TLI493D
XENSIV™ current sensor, digital I/F TLI 4970
XENSIV™ current sensor, analog I/F TLI4971
Object & condition sensing XENSIV™ pressure/temperature sensor, digital I/F DPS310
XENSIV™ 24 GHz radar BGT24MTR11/12, BGT24MR2
XENSIV™ MEMS microphone, analog I/F IM69D120/IM69D130
XENSIV™ ToF 3D imaging @ 38-100k pixel REAL3™ IRS1125C/IRS1645C/IRS2381C
Peripherals:
-WLAN/BT/GPS
-Human machine interface
Audio Class D audio amplifier IR43x1M, IR43x2M
Interface CAN, CAN FD, CAN PD @ 1-5 MBit/s Industrial CAN transceiver
Industrial interface ICs ISOFACE™
LED drivers Driving currents from 10-250 mA Linear dirver ICs BCR3xx, BCR4xx
Support currents from 150 mA to 3A DCDC switch mode ILD4xxx, ILD6xxx
Security and safety
-Motion controller (incl. safety)
-Security controller
Controller TriCore™ Safety certified with security on-chip AURIX™
Sensors Safe angle sensing - dual die structure e.g. TLE5009xxxD
Voltage regulators DCDC voltage regulator 12 V/ 5V or 3.3 V; watchdog,
error monitoring, safe state control, BIST etc.
e.g. TLF35584
Security Hardware-based, embedded security solutions, mutual
authentication, secure communication, key protection,
data signing etc.
OPTIGA™ TPM/Trust B/Trust X
Infineon’s key enabling products for robotics
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
35
Travelling with multiple and oen clunky chargers and adapters for phones,
tablets and laptops has been a nuisance for many consumers, and oen leads
to frustrations due to the additional weight and required space. Over the past
years manufacturers of chargers and adapters became increasingly aware of
these issues and a trend towards higher power density and consequently smaller
devices has emerged. Today, the typical power topology used in such systems is a
flyback power conversion topology and the form factor is limited by the eiciency
achievable at 90 VAC input voltage and full load. The highest power density systems
available today reach ~12 W/in
3
(for 65 W maximum output power). Infineon’s
CoolGaN™ e-mode HEMTs enable a breakthrough with respect to power density
for adapter and charger systems enabling ~20 W/in
3
power density systems (for
65 W maximum output power). This advantage can be realized by implementing
Infineon’s CoolGaN™ in a half-bridge topology that allows increasing switching
frequency and eiciency simultaneously.
Infineon’s 20 W/in
3
adapter (cased) -
24 W/in
3
(uncased) with 65 W output
power capability (LxWxH: 74.2 mm x
36.5 mm x 16.5 mm)
www.infineon.com/smps
Type-C connector
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary side PWM control
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
34
35
Laptop adapter
Manufacturing slimmer and lighter adapters requires ICs enabling high eiciency with good electromagnetic interference
(EMI) performance and low standby power. There is also a need for cost-eective MOSFETs in small packages that feature
good EMI and excellent thermal performance. Infineon oers a wide range of products specifically designed for adapters
including high voltage MOSFETs and control ICs for PFC and PWM stages, as well as low voltage MOSFETs for synchronous
rectification. With these products, Infineon supports the trend towards a significantly higher eiciency level, especially in
partial load conditions, as well as miniaturization of the adapter.
Extremely versatile are the recently released CoolMOS™ P7 SJ MOSFET series series, which combine high eiciency and
optimized cost with the ease of use. Infineon developed a family of packages, characterized by having a short lead, IPAK
Short Lead with ISO-Stando and wide creepage that enable our customers’ cheap and reliable manufacturing, specifically
for adapters. High power density at low manufacturing cost can be delivered using Infineon’s SOT-223 cost-eective
package which enables SMT manufacturing, while maintaining very good thermal performances. For synchronous
rectification, Infineon’s OptiMOS™ power MOSFET series oer extremely low on-state resistance and low capacitances.
New control ICs support topologies such as quasi-resonant flyback, and digital-based XDP controller can enable the forced
frequency resonant flyback (zero voltage switching) operation, making it ideal to implement in high power density adapters
and supporting USB-PD requirements.
Regional regulations and a general increased sensitivity toward the containment of electronic waste are pointing toward
the adoption of universal adapters. The implementations, methodologies and protocols are not yet harmonized; however,
Infineon is already closely monitoring and partnering with the decision makers to timely ensure the oer of a competitive
semiconductor solution. The capability to eiciently manage dierent power classes and protocols are key in this
application, and Infineon is getting ready to support adapter makers in this challenge.
SMPS
Right-fit portfolio for competitive design of laptop adapters
Functional block Product category Topology Product family Benefits
Flyback converter High voltage MOSFETs
and HEMTs
Flyback
600 V/700 V/800 V CoolMOS™ P7
SJ MOSFETs
› Fast-switching speed for improved eiciency and thermals
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
Flyback (ACF, FFR, etc.)
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency
› Highest power density
Low voltage MOSFETs Flyback/auxiliary
synchronous rectification
OptiMOS™ 100-150V › Low conduction losses and reduced overshoot
› Logic level can support low voltage gate drive to achieve
high eiciency
Control ICs QR flyback IC ICE2QS03G, ICE5QSAG › High eiciency and low standby power
FFR flyback IC IDP2105, XDPS21061 › High power density and digital control
PFC High voltage MOSFETs,
HEMTs, and diodes
DCM PFC 600 V CoolMOS™ P7
SJ MOSFETs
› Fast-switching speed for improved eiciency
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
DCM/CCM PFC
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency contribution via less parasitic parameter
› Space saving with SMD smaller package
Boost diode DCM/PFC 650 V Rapid 1 diodes › Low conduction losses
Control ICs DCM PFC ICs TDA4863G,
IRS2505LTRPBF
› Simple external circuitry
› High power factor and low THD
Main stage High voltage MOSFETs
and HEMTs
HB LLC 600 V CoolMOS™ P7
SJ MOSFETs
› Fast-switching speed for improved eiciency and thermals
› Reduced gate charge for enhanced light load eiciency
› Optimized gate-to-source voltage (VGS) threshold for lower turn-o losses
CoolGaN™ 600 V e-mode HEMTs
› Highest eiciency
› Highest power density
Synchronous
rectification
Low voltage MOSFETs Synchronous rectification OptiMOS™ 5 100-150V › Low conduction losses, reduced overshoot
› Logic level switching
Control ICs Synchronous rectification IR1161LTRPBF › High eiciency
› Simple external circuitry
www.infineon.com/smps
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
35
Travelling with multiple and oen clunky chargers and adapters for phones,
tablets and laptops has been a nuisance for many consumers, and oen leads
to frustrations due to the additional weight and required space. Over the past
years manufacturers of chargers and adapters became increasingly aware of
these issues and a trend towards higher power density and consequently smaller
devices has emerged. Today, the typical power topology used in such systems is a
flyback power conversion topology and the form factor is limited by the eiciency
achievable at 90 VAC input voltage and full load. The highest power density systems
available today reach ~12 W/in
3
(for 65 W maximum output power). Infineon’s
CoolGaN™ e-mode HEMTs enable a breakthrough with respect to power density
for adapter and charger systems enabling ~20 W/in
3
power density systems (for
65 W maximum output power). This advantage can be realized by implementing
Infineon’s CoolGaN™ in a half-bridge topology that allows increasing switching
frequency and eiciency simultaneously.
Infineon’s 20 W/in
3
adapter (cased) -
24 W/in
3
(uncased) with 65 W output
power capability (LxWxH: 74.2 mm x
36.5 mm x 16.5 mm)
www.infineon.com/smps
Type-C connector
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary side PWM control
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
37
PC power supply
The PC power market is divided into high-end gaming PC and better cost-performance sectors to achieve a better price
performance goal for desktop SMPS. The PC OEMs are implementing the desktop SMPS by removing the AUX power
block, to save the cost of having a flyback circuit.
Infineon’s IDP2321 is the first digital PFC + LLC combo IC worldwide to meet world-leading PC manufacturers’ specifications,
with integrated drivers and a 600 V depletion cell to achieve low standby power and lower cost. The PFC controlling loop
is a configurable CrCM/DCM multimode to meet highest light-load eiciency. And the most important of all, IDP2321 has
approximately 30 to 40 less part counts than traditional analog solutions, thanks to the state-of-the-art digital control.
Furthermore, Infineon’s IDP2321 oers flexible IC parameter configuration with user-friendly GUI, which means R&D
engineers
can key in the parameters on the PC to fine-tune and debug the system performance instead of soldering the
passive components. Infineon oers the best total system solutions for non-AUX PC power together with its SMD and
through-hole MOSFETs.
SMPS
More eicient PC power supply
DC
AC
Vin Vout
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
PFC/Main stage High voltage MOSFETs CrCM/DCM PFC 600V CoolMOS™ P7 › Best thermal performance
› Rugged body diode
› ESD enhancement for production line
› Wide RDS(on) portfolio including both THD and SMD packages
600V CoolMOS™ P6 › Fast-switching speed for improved eiciency and thermals
› Low gate charge for enhanced light-load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for low turn-o losses
500V CoolMOS™ CE › Optimized cost/performance
› Lower transition losses versus standard MOSFET
Boost diodes DCM PFC 650V Rapid 1 › Low conduction losses
CCM PFC 650V Rapid 2 › Low reverse recovery losses and PFC switch turn-on losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs 650V – ICE1HS01G-1/
ICE2HS01G › High eiciency and low EMI
Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOS™ 40V › Optimized cost/performance and low thermals
OptiMOS™ 60V › Layout tolerance and low thermals
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
36
37
Mobile charger
Modern mobile devices require a charger that provides faster charging but comes in a small size. High power density
and cost-eective power supplies can be designed by operating the converter at a higher switching frequency to
avoid a considerable increase in the transformer and the output capacitor size. In achieving the required thermal
performance and EMI behavior, power devices with lower losses and controlled switching behavior enable eective
and fast product development.
Infineon’s state-of-the-art digital-based controller XDPS21061 enables the forced frequency resonant flyback (zero
voltage switching) operation, ideal to implement in high power density adapters and well-supporting USB-PD
requirements.
To address these requirements, Infineon oers its CoolMOS™ P7 SJ MOSFET family for adapters and chargers. Special
care has been taken to ensure very good thermal behavior, increased eiciency and fulfillment of all EMI requirements,
enabling our customers to easily design products based on this new family. In addition, power devices in IPAK/SMD
packages enable optimal PCB layout through minimal footprint. SMD packages oer additional benefits for automatized
large volume production. Specifically, high power density at low manufacturing cost can be delivered using Infineon’s
SOT-223 cost-eective package, which enables SMT manufacturing maintaining very good thermal performances.
The digital so switching controller, CoolMOS™ high voltage MOSFETs, OptiMOS™ low voltage MOSFETs and
synchronous rectification IC portfolios, enable high power density designs whilst meeting the thermal requirements.
Functional block Product category Topology Product family Benefits
Flyback converter High voltage MOSFETs Flyback 700 V CoolMOS™ P7 (standard grade) › Best price competitive CoolMOS™ SJ MOSFET family
› Lower switching losses versus standard MOSFET
Control ICs QR flyback ICs ICE5QSAG , ICE5QSAG › High eiciency and low standby power
FFR flyback IC XDPS21061 › High power density and ideal for USB-PD
Synchronous rectification Low voltage MOSFETs Synchronous
rectification
OptiMOS™ 5 40-120 V logic level › Low conduction losses and reduced overshoot
› Logic level switching
› S308/PQFN 3.3 x 3.3 package available
Control ICs Synchronous
rectification
IR1161LTRPBF › High eiciency
› Simple external circuitry
Load switch Low voltage MOSFETs Load switch OptiMOS™ 30 V › Low conduction losses
› S308/PQFN 3.3 x 3.3 package available
Charger SMPS
Best solutions for mobile charger
www.infineon.com/smps
Type-C connector
DC
Main stage
AC
Vin Vout
SwitchRectification
SR and protocol control
Primary side PWM control
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
37
PC power supply
The PC power market is divided into high-end gaming PC and better cost-performance sectors to achieve a better price
performance goal for desktop SMPS. The PC OEMs are implementing the desktop SMPS by removing the AUX power
block, to save the cost of having a flyback circuit.
Infineon’s IDP2321 is the first digital PFC + LLC combo IC worldwide to meet world-leading PC manufacturers’ specifications,
with integrated drivers and a 600 V depletion cell to achieve low standby power and lower cost. The PFC controlling loop
is a configurable CrCM/DCM multimode to meet highest light-load eiciency. And the most important of all, IDP2321 has
approximately 30 to 40 less part counts than traditional analog solutions, thanks to the state-of-the-art digital control.
Furthermore, Infineon’s IDP2321 oers flexible IC parameter configuration with user-friendly GUI, which means R&D
engineers
can key in the parameters on the PC to fine-tune and debug the system performance instead of soldering the
passive components. Infineon oers the best total system solutions for non-AUX PC power together with its SMD and
through-hole MOSFETs.
SMPS
More eicient PC power supply
DC
AC
Vin Vout
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
PFC/Main stage High voltage MOSFETs CrCM/DCM PFC 600V CoolMOS™ P7 › Best thermal performance
› Rugged body diode
› ESD enhancement for production line
› Wide RDS(on) portfolio including both THD and SMD packages
600V CoolMOS™ P6 › Fast-switching speed for improved eiciency and thermals
› Low gate charge for enhanced light-load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for low turn-o losses
500V CoolMOS™ CE › Optimized cost/performance
› Lower transition losses versus standard MOSFET
Boost diodes DCM PFC 650V Rapid 1 › Low conduction losses
CCM PFC 650V Rapid 2 › Low reverse recovery losses and PFC switch turn-on losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs 650V – ICE1HS01G-1/
ICE2HS01G › High eiciency and low EMI
Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOS™ 40V › Optimized cost/performance and low thermals
OptiMOS™ 60V › Layout tolerance and low thermals
DC outputAC input
PFC RectificationLLC MOS
CCM PFC
controller LLC controller
AUX/standby
DC outputAC input
PFC RectificationLLC MOS
PFC + PWM
(digital combi)
DC outputAC input
RectificationHV MOS
PWM
Non-AUX digital solution for large screen size
High power solution for larger screen size
Flyback solution for small screen size
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
39
www.infineon.com/smps
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
38
39
TV power supply
In addition to their outstanding image quality, new generation TVs gain attention for their user interface, low power
consumption and for their slim design. This requires the power supply unit (PSU) to either keep a low profile to
maintain the slim appearance of a TV and a low thermal dissipation image or to have an external adapter. In addition, a
growing number of TV manufacturers will use external adapters to deliver DC power to the TV. Infineon introduced two
products based on digital power technology, designed to meet challenging eiciency and standby power requirements
for Internet of Things (IoT) enabled TVs (both embedded PSU and adapter).
Thanks to digital power, our customers can reduce the number of TV power supplies by adapting the digital IC parameters
to dierent TV and screen models by flexible and easy parameter setting. On top of that, Infineon recently introduced
thedigital based flyback controllers, ideal to implement low power adapters for TVs and monitors. With the digital so
switching, the adapter power density can be improved significantly. The new 600 V CoolMOS™ P7 is the logical successor of
the current 600 V CoolMOS™ P6. The series has been developed to cover a broad spectrum of dierent applications where
the excellent performance and perfect ease of use are required. The rugged body diode enables not only the use in hard
switching topologies, such as power factor correction, boost, and two transistor forward, but also in resonant topologies
such as LLC where the technologies lead to high eiciency in both hard-switching and resonant circuits.
For higher on-state resistance (RDS(on)) classes, there is a new feature of an integrated ESD diode that helps improve the quality
in manufacturing. At the same time, the low RDS(on) and gate charge (QG) enable high eiciency in the various topologies. The
600 V CoolMOS™ P7 comes with a wide variety of RDS(on)s and packages on consumer grade to make it best suitable for TV
power by balancing the cost and performance. Infineon developed specifically for TV power supplies a family of packages,
characterized by short lead, SOT-223 mold stopper and wide creepage distance, which enable our customers’ cheap and
reliable manufacturing.
SMPS
Diversify TV power supply with cost, performance and ease of use
Functional block Product category Topology Product family Benefits
Main stage/PFC combo
non-AUX
High voltage
MOSFETs
DCM PFC, HB LLC 600V CoolMOS™ P7 › Fast-switching speed for improved eiciency
› Low gate charge for enhanced light load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode for HB LLC application
500V/600V CoolMOS™ CE › Easy control of switching behavior even in
non-optimized layout
› Lower switching losses in comparison with its predecessor
› Rugged body diode which prevents device failure during
hard commutation
Control ICs IDP2308 PFC-LLC non-AUX digital IC for
TV embedded PSU › Low BOM count/system cost due to high integration
› Low standby power
› High system reliability
› Shorter development cycles and higher design and
production flexibility
IDP2303A PFC-LLC non-AUX digital IC for
TV adapter › Low BOM count/system cost due to high integration
› Low standby power
› Small form factor designs
› High system reliability
PFC Boost diodes DCM PFC 650V Rapid diode › Low conduction losses
Control ICs CCM PFC ICs ICE3PCS0xG › High PFC and low THD
Main stage Control ICs HB LLC ICs ICE1HS01G-1/ICE2HS01G › High eiciency and low EMI
Auxiliary power supply Control ICs QR/FF flyback
CoolSET™
700V/800V – ICE5QRxx70/80A(Z)(G) › Low standby power, high eiciency and robustness
Flyback Control ICs Digital ZVS
flyback
IDP2105 › Forced resonant ZVS control reduces the switching loss
› Multilevel protection enables the robust design
› Flexible firmware provides more dierentiation for OEMs
High voltage
MOSFETs
Flyback 700 V CoolMOS™ P7 › Optimized for flyback topologies
› Best price competitive CoolMOS™ SJ MOSFET family
› Lower switching losses versus standard MOSFET
› Controlled dV/dt and di/dt for better EMI
www.infineon.com/smps
DC outputAC input
PFC RectificationLLC MOS
CCM PFC
controller LLC controller
AUX/standby
DC outputAC input
PFC RectificationLLC MOS
PFC + PWM
(digital combi)
DC outputAC input
RectificationHV MOS
PWM
Non-AUX digital solution for large screen size
High power solution for larger screen size
Flyback solution for small screen size
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
39
www.infineon.com/smps
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
41
Customers who design or manufacture a product that needs embedded intelligence typically want to focus on the
system design of their product, be it white goods, a vending machine, an automatic door opener or any other product.
They do not want to spend valuable eorts and time in designing the power supply systems. They just want to use
them, having a trouble-free, EMI friendly, and reliable power supply.
Infineon decided to build a scalable broad range of products, and flexible, and easy to reuse reference designs aimed at
helping its customers with best fitting solutions tailored for their dierent needs.
Depending on their specific needs, our customers can select very low-cost power supply reference designs featuring
high integration or using a platform approach to reuse the same power designs for dierent products that need
dierent power supplies. If high eiciency is needed, for example to meet ENERGY STAR label requirements or to
improve overall thermal performance, Infineon oers highest eiciency power supply reference designs.
In addition, Infineon oers comprehensive reference designs and application notes helping customers to drastically
improve the eiciency of their power supply by using secondary-side synchronous rectification instead of a rectifier
diode. Benefits of synchronous rectification are better eiciency and better thermal performance of your power supply.
SMPS
Full system solutions for embedded power supplies
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 700 V/800 V
ICE5QRxx70/80A(Z)(G) › Low standby power, high eiciency and
robustness
Flyback Control ICs QR flyback ICE5QSAG › High eiciency and low standby power
High voltage MOSFET Flyback
700 V/800 V CoolMOS™ P7
› Best price competitive CoolMOS™ family
› Lower switching losses versus standard
MOSFET
› Controlled dV/dt and di/dt for better EMI
DC
Flyback
AC
Vin Vout
Flyback
Rectification
DC
AC
Vin Vout
Flyback non-AUX
Rectification
PFC Main stage
Vbus
Embedded power supply
OLED LLC
controller IC
OLED LLC
stage
Main LLC
stage
Rectifier
+ PFC
stage
VBUS
VCC
Supply for standby mode
Supply for OLED display
On/o control
Supply for system
Supply for system
Power on control
Status information
Vin
PFC not active in
standby mode
startup
Main LLC/PFC
combo-controller IC
OLED
module and
TV system
AC
OLED TV power block diagram
CoolGaN™ portfolio
Benefiting from several advantage of organic light emitting diodes (OLED), varying TV manufacturers are developing
OLED TVs to level up the user experience of their consumers. Comparing with LCD/LED TV panels, the OLED can be
thinner, lighter and more flexible, also the power consumption is lower. With the excellent performance of wide
bandgap GaN power MOSFETs from Infineon, the OLED TV become even thinner and more reliable.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
40
41
RDS(on) DSO-20-85
Bottom-side cooling
DSO-20-87
Top-side cooling
HSOF-8-3
TO-leadless
LSON-8-1
DFN 8x8
35 IGO60R035D1* IGOT60R035D1* IGT60R035D1*
70 IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1
190 IGT60R190D1*
IGT60R190D1S**
IGLD60R190D1*
340 IGLD60R340D1*
www.infineon.com/smps
TV power supply
* Coming soon
**Standard grade
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
41
Customers who design or manufacture a product that needs embedded intelligence typically want to focus on the
system design of their product, be it white goods, a vending machine, an automatic door opener or any other product.
They do not want to spend valuable eorts and time in designing the power supply systems. They just want to use
them, having a trouble-free, EMI friendly, and reliable power supply.
Infineon decided to build a scalable broad range of products, and flexible, and easy to reuse reference designs aimed at
helping its customers with best fitting solutions tailored for their dierent needs.
Depending on their specific needs, our customers can select very low-cost power supply reference designs featuring
high integration or using a platform approach to reuse the same power designs for dierent products that need
dierent power supplies. If high eiciency is needed, for example to meet ENERGY STAR label requirements or to
improve overall thermal performance, Infineon oers highest eiciency power supply reference designs.
In addition, Infineon oers comprehensive reference designs and application notes helping customers to drastically
improve the eiciency of their power supply by using secondary-side synchronous rectification instead of a rectifier
diode. Benefits of synchronous rectification are better eiciency and better thermal performance of your power supply.
SMPS
Full system solutions for embedded power supplies
www.infineon.com/smps
Functional block Product category Topology Technology Benefits
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 700 V/800 V
ICE5QRxx70/80A(Z)(G) › Low standby power, high eiciency and
robustness
Flyback Control ICs QR flyback ICE5QSAG › High eiciency and low standby power
High voltage MOSFET Flyback
700 V/800 V CoolMOS™ P7
› Best price competitive CoolMOS™ family
› Lower switching losses versus standard
MOSFET
› Controlled dV/dt and di/dt for better EMI
DC
Flyback
AC
Vin Vout
Flyback
Rectification
DC
AC
Vin Vout
Flyback non-AUX
Rectification
PFC Main stage
Vbus
Embedded power supply
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
43
Server power supply
www.infineon.com/smps
Functional block Product category Topology Product family Benefits
PFC High voltage MOSFETs CCM/interleaved PFC; TTF 600 V/650 V CoolMOS™ C7 650
V CoolMOS™ G7 › Best FOM RDS(on)*QG and RDS(on)*Eoss
› Lowest RDS(on) per package
› Low dependency of switching losses form Rg,ext
High voltage GaN Totem pole PFC 600 V CoolGaN™ › Enable the highest eiciency and highest power density
SiC diodes CCM/interleaved PFC 650 V CoolSiC™ Schottky diode
generation 5 › Low FOM VF*QG
Control ICs CCM PFC ICs ICE3PCS0xG › Ease of use
Main stage High voltage MOSFETs ITTF 600 V CoolMOS™ C7/P6 › Fast switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard
commutation
LLC, half-bridge below
1 kW
600 V CoolMOS™ P7, CFD7 › Low turn-o losses
› Low Qoss
› Low QG
LLC, phase shi full-bridge
below 1 kW
600 V CoolMOS™ CFD7,
650 V CoolMOS™ CFD2 › Fast and rugged body diode
› Optimized low QG and so commutation behavior to reach
highest eciency
› Highest reliability for 650 V VDS
ZVS PS FB; LLC, TTF 650 V TRENCHSTOP™ F5 › Improved ruggedness and high eiciency in low inductance
designs
Control ICs HB LLC ICs ICE1HS01G-1
ICE2HS01G › High eiciency and low EMI
Sychronous rectification
Low voltage MOSFETs
HB LLC and center tap OptiMOS™ power MOSFET 40 V › High eiciency over whole load range, layout tolerance
ITTF 60 V OptiMOS™ › High eiciency, low thermals, low VDS overshoot
ZVS PS FB and center tap 80 V OptiMOS™ › High eiciency over whole load range, low VDS overshoot and
oscillations
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 800 V – ICE2QRxx80(Z)(G)
ICE3xRxx80J(Z)(G)
700 V ICE5QRxx70A(Z)(G) 800
V ICE5QRxx80A(Z)(G)
› Low standby power, high eiciency and robustness
› An integrated 700 V/800 V superjunction power MOSFET with
avalanche capability
› Burst mode entry/exit to optimize standby power at dierent
low load conditions
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM and digital communication
PFC, PWM/resonant
converter, synchronous
rectification
Gate driver ICs - 1EDix EiceDRIVER™ › 100 ns typical propagation delay time
› Functional isolation
› Separate source
- 2EDNx EiceDRIVER™ › 8 V UVLO option
› -10 V input robustness
› Output robust against reverse current
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
42
43
Server power supply
The trend in the field of enterprise and data center server is to deliver more power per rack. Meanwhile, the higher rising
cost of energy and environmental concerns make SMPS eiciency optimization a key requirement across the entire load
range for server and data center design. This challenging task is combined with the requirement for higher power and
higher power density with cost-eective design.
In the PFC stage and in general hard-switching topologies used in server applications, Infineon recommends its
600 V CoolMOS™ C7 family with the lowest FOM RDS(on) *QG and RDS(on) *Eoss. This MOSFET series provides the lowest
switching losses, which are necessary in fast switching needed in high-end server SMPS. In this way, the eiciency is
optimized starting from a very light-load operation. The very compact SMD packages such as ThinPAK, DDPAK and TOLL
oer benefits in space and power density and are used with Infineon’s new industry standard non-isolated driver family
2EDN752x. Complementary to the 600 V CoolMOS™ C7 in high eiciency PFC is the CoolSiC™ Schottky diode generation
family. The 600 V CoolMOS™ P6 family oers a good compromise between price and performance. This is valuable in
both PFC and HV DC-DC stages where the low Q
G
and turn-o losses are important benefits, especially in the case of
high-switching frequency operation and high light load eiciency requirements. In applications which require very
high eiciency (Titanium and above) and power density, 650 V CoolMOS™ G7 and 600 V CoolGaN™ families enable the
highest eiciency and power density at lower system cost for high power (2~3 kW above). Operating expenses (OPEX)
and capital expenditures (CAPEX) are both reduced through simplified topologies and the power density in server PSU is
doubled.
In applications with a low output voltage and a high output current, further eiciency improvements have been made
possible by the continuous reduction of on-resistance by Infineon’s low voltage OptiMOS™ MOSFET series used in the
synchronous rectification stage. Infineon’s low voltage families are complemented by StrongIRFET™ which is optimized
for lower switching frequencies and highest system robustness.
SMPS
Highly eicient server power supply
DC
Auxiliary power
Control and housekeeping
AC
Vin Vout
DC
Vaux
PFC-PWM with AUX and ICs
Rectification
PFC Main stage
Vbus
www.infineon.com/smps
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
43
Server power supply
www.infineon.com/smps
Functional block Product category Topology Product family Benefits
PFC High voltage MOSFETs CCM/interleaved PFC; TTF 600 V/650 V CoolMOS™ C7 650
V CoolMOS™ G7 › Best FOM RDS(on)*QG and RDS(on)*Eoss
› Lowest RDS(on) per package
› Low dependency of switching losses form Rg,ext
High voltage GaN Totem pole PFC 600 V CoolGaN™ › Enable the highest eiciency and highest power density
SiC diodes CCM/interleaved PFC 650 V CoolSiC™ Schottky diode
generation 5 › Low FOM VF*QG
Control ICs CCM PFC ICs ICE3PCS0xG › Ease of use
Main stage High voltage MOSFETs ITTF 600 V CoolMOS™ C7/P6 › Fast switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency and low
power consumption at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard
commutation
LLC, half-bridge below
1 kW
600 V CoolMOS™ P7, CFD7 › Low turn-o losses
› Low Qoss
› Low QG
LLC, phase shi full-bridge
below 1 kW
600 V CoolMOS™ CFD7,
650 V CoolMOS™ CFD2 › Fast and rugged body diode
› Optimized low QG and so commutation behavior to reach
highest eciency
› Highest reliability for 650 V VDS
ZVS PS FB; LLC, TTF 650 V TRENCHSTOP™ F5 › Improved ruggedness and high eiciency in low inductance
designs
Control ICs HB LLC ICs ICE1HS01G-1
ICE2HS01G › High eiciency and low EMI
Sychronous rectification
Low voltage MOSFETs
HB LLC and center tap OptiMOS™ power MOSFET 40 V › High eiciency over whole load range, layout tolerance
ITTF 60 V OptiMOS™ › High eiciency, low thermals, low VDS overshoot
ZVS PS FB and center tap 80 V OptiMOS™ › High eiciency over whole load range, low VDS overshoot and
oscillations
Auxiliary power supply Control ICs QR/FF flyback CoolSET™ 800 V – ICE2QRxx80(Z)(G)
ICE3xRxx80J(Z)(G)
700 V ICE5QRxx70A(Z)(G) 800
V ICE5QRxx80A(Z)(G)
› Low standby power, high eiciency and robustness
› An integrated 700 V/800 V superjunction power MOSFET with
avalanche capability
› Burst mode entry/exit to optimize standby power at dierent
low load conditions
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM and digital communication
PFC, PWM/resonant
converter, synchronous
rectification
Gate driver ICs - 1EDix EiceDRIVER™ › 100 ns typical propagation delay time
› Functional isolation
› Separate source
- 2EDNx EiceDRIVER™ › 8 V UVLO option
› -10 V input robustness
› Output robust against reverse current
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
45
Telecom power supply
www.infineon.com/smps
*Upcoming - Q2/2019
Functional block Product category Topology Product family Benefits
DC-DC
main stage
High voltage
MOSFETs
CCM/interleaved PFC;
TTF HB LLC
600V CoolMOS™ C7/P7 › Fast-switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency and low power consumption
at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard commutation
LLC 600V CoolMOS™ P7 › Low turn-o losses
› Low Qoss
› Low QG
CCM/interleaved PFC;
TTF HB LLC
600V CoolMOS™ CFD7 › Best-in-class Qrr and trr level
› Significantly reduced QG
› Improved eiciency over previous CoolMOS™ fast body diode series
Control ICs HB LLC ICs ICE1HS01G-1, ICE2HS01G › High eiciency and low EMI
GaN driver ICs LLC, ZVS phase shi
full-bridge
EiceDRIVER™ 1EDS5663H › Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Input-output propagation delay accuracy: +/- 5 ns
› Functional and reinforced isolation available
GaN e-mode
HEMTs
LLC, ZVS phase shi
full-bridge
CoolGaN™ 600 V › Enable the highest eiciency and highest power density
Synchronous
rectification
Low voltage
MOSFETs
Synchronous
rectification MOSFET
OptiMOS™ 80-150V › Industry’s lowest FOM (RDS(on)*QG) leading to high eiciency at good price/performance
› Low voltage overshoots enabling easy design-in
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
Auxiliary power
supply
Control ICs 5
th
generation QR/FF
flyback CoolSET™
QR 800 V - ICE5QRxx80Ax
FF 800 V - ICE5xRxx80AG › Quasi-resonant switching operation for high eiciency and low EMI signature
› Fixed frequency switching operation for ease of design – 100 KHz and 125 KHz
› Fast and robust start-up with cascode configuration
› Robust protection with adjustable line input over-voltage protection,
VCC and CS pin short-to-ground protection
› Optimized light-load eiciency with selectable burst mode entry/exit profile
› Frequency reduction for mid- and light-load condition to reduce switching losses and
increase eiciency
› Direct feedback and regulation with integrated error amplifier for non-isolated output
› High power delivery of up to 42 W with 800 V CoolSET™ in heatsink-free SMD package
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
PFC, PWM/
resonant
converter,
synchronous
rectification
Gate driver ICs Single-channel
non-isolated
EiceDRIVER™ 1EDN751x › 8 V UVLO option
› (-)10 V input robustness
› Output robust against reverse current
Single-channel
non-isolated
EiceDRIVER™ 1EDN7550 › 8 V UVLO option
› (-)10 V input robustness
› True dierential inputs for >100 VAC ground shi robustness
Dual-channel
non-isolated
EiceDRIVER™ 2EDN7x › 8 V UVLO option
› (-)10 V input robustness
› Output robust against reverse current
Dual-channel
junction isolated
EiceDRIVER™ 2EDL811x* › 20 ns typical propagation delay time
› 20 V bootstrap capability on high side
› (-)7 V input robustness
Single-channel isolated EiceDRIVER™ 1EDi
Compact › 100 ns typical propagation delay time
› Functional isolation 1.2 kV separate source and sync outputs
Dual-channel isolated EiceDRIVER™ 2EDFx › 35 ns typical propagation delay time
› Functional isolation 1.5 kVCMTI > 150 V/ns
Dual-channel isolated EiceDRIVER™ 2EDSx › 35 ns typical propagation delay time
› Reinforced (safe) isolation 6 kV CMTI > 150 V/ns
Or-ing Low voltage
MOSFETs
Or-ing MOSFET OptiMOS™ 60-200 V › Industry’s lowest FOM (RDS(on)*QG) leading to high eiciency at good price/performance
› Low voltage overshoots enabling easy design-in
Battery
protection
Low voltage
MOSFETs
MOSFET OptiMOS™ 60-150V
Isolated DC-DC Low voltage
MOSFETs
Primary side
PWM MOSFET OptiMOS™ 60-200V › Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
StrongIRFET™ 60-200V
Small signal MOSFETs
60-200 V
Synchronous
rectification MOSFET OptiMOS™ 40-100V
StrongIRFET™ 40-100V
Or-ing MOSFET OptiMOS™ 25-30V
StrongIRFET™ 25-30V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
44
45
www.infineon.com/smps
The telecommunication industry providing data, voice, and video services is continuously growing supported by the
expansion into new markets and accelerated by the spread of wireless and broadband technologies. The outstanding
improvements in telecom SMPS performance made in the past 10 years have been primarily brought about by the
dramatic reduction of the on-resistance achieved in high voltage MOSFETs, using the revolutionary superjunction
principle. This principle was introduced by Infineon at the end of the nineties with the CoolMOS™ series.
Equally impressive improvements in reverse-recovery characteristics have been achieved for high voltage CoolSiC™
(silicon carbide) diodes. Infineon’s high voltage (HV) oerings are complemented by the newly introduced HV GaN
switches – the CoolGaN™ family, which enables highest electrical conversion eiciency at attractive system costs.
In order to meet the new challenging eiciency targets, the synchronous rectification utilizing the unique performance
of OptiMOS™ low voltage MOSFETs has become increasingly popular even in the typically high output voltage of
telecom rectifiers.
SMPS
Full system solution for telecom power supply
niPOL, buck
Load
Load
Power
distribution Hot swap Primary side
PWM
Synchronous
rectification Or-ing
Battery protection
DC
Isolated DC-DC Non-isolated POL
AUX
Analog and digital control ICs
AC
Vin
DC
Vout
DC
Vaux
AC-DC rectifier
Synchronous
rectification
PFC DC-DC
main stage
Vbulk
Or-ing
Telecom power supply
Functional block Product category Topology Product family Benefits
PFC High voltage
MOSFETs
CCM/interleaved PFC;
TTF
600V/650V
CoolMOS™ C7 › Best FOM RDS(on)*QG and RDS(on)*Eoss
› Lowest RDS(on) per package
› Low dependency of switching losses form Rg,ext
600V CoolMOS™ P7 › Low turn-o losses
› Low Qoss
› Low QG
High voltage
GaN
CCM totem pole CoolGaN™ 600 V › Switching at high frequencies (> Si)
› Enables high power density
SiC diodes CCM/interleaved PFC 650 V CoolSiC™ Schottky
diode generation 6 › Low FOM VF*QC
Control ICs CCM PFC ICs 800V – ICE3PCS0xG › High PFC and low THD
GaN driver ICs Totem pole PFC EiceDRIVER™ 1EDF5673F
and 1EDF5673K › Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Input-output propagation delay accuracy: ±5 ns
› Functional and reinforced isolation available
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
45
Telecom power supply
www.infineon.com/smps
*Upcoming - Q2/2019
Functional block Product category Topology Product family Benefits
DC-DC
main stage
High voltage
MOSFETs
CCM/interleaved PFC;
TTF HB LLC
600V CoolMOS™ C7/P7 › Fast-switching speed for improved eiciency and thermals
› Low gate charge for enhanced light load eiciency and low power consumption
at no load condition
› Optimized VGS threshold for lower turn-o losses
› Rugged body diode which prevents device failure during hard commutation
LLC 600V CoolMOS™ P7 › Low turn-o losses
› Low Qoss
› Low QG
CCM/interleaved PFC;
TTF HB LLC
600V CoolMOS™ CFD7 › Best-in-class Qrr and trr level
› Significantly reduced QG
› Improved eiciency over previous CoolMOS™ fast body diode series
Control ICs HB LLC ICs ICE1HS01G-1, ICE2HS01G › High eiciency and low EMI
GaN driver ICs LLC, ZVS phase shi
full-bridge
EiceDRIVER™ 1EDS5663H › Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Input-output propagation delay accuracy: +/- 5 ns
› Functional and reinforced isolation available
GaN e-mode
HEMTs
LLC, ZVS phase shi
full-bridge
CoolGaN™ 600 V › Enable the highest eiciency and highest power density
Synchronous
rectification
Low voltage
MOSFETs
Synchronous
rectification MOSFET
OptiMOS™ 80-150V › Industry’s lowest FOM (RDS(on)*QG) leading to high eiciency at good price/performance
› Low voltage overshoots enabling easy design-in
› Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
Auxiliary power
supply
Control ICs 5
th
generation QR/FF
flyback CoolSET™
QR 800 V - ICE5QRxx80Ax
FF 800 V - ICE5xRxx80AG › Quasi-resonant switching operation for high eiciency and low EMI signature
› Fixed frequency switching operation for ease of design – 100 KHz and 125 KHz
› Fast and robust start-up with cascode configuration
› Robust protection with adjustable line input over-voltage protection,
VCC and CS pin short-to-ground protection
› Optimized light-load eiciency with selectable burst mode entry/exit profile
› Frequency reduction for mid- and light-load condition to reduce switching losses and
increase eiciency
› Direct feedback and regulation with integrated error amplifier for non-isolated output
› High power delivery of up to 42 W with 800 V CoolSET™ in heatsink-free SMD package
Housekeeping Microcontrollers - XMC1xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
Conversion Microcontrollers - XMC4xxx › Flexibility, HR PWM, digital communication
› ARM® based standard MCU family and wide family
PFC, PWM/
resonant
converter,
synchronous
rectification
Gate driver ICs Single-channel
non-isolated
EiceDRIVER™ 1EDN751x › 8 V UVLO option
› (-)10 V input robustness
› Output robust against reverse current
Single-channel
non-isolated
EiceDRIVER™ 1EDN7550 › 8 V UVLO option
› (-)10 V input robustness
› True dierential inputs for >100 VAC ground shi robustness
Dual-channel
non-isolated
EiceDRIVER™ 2EDN7x › 8 V UVLO option
› (-)10 V input robustness
› Output robust against reverse current
Dual-channel
junction isolated
EiceDRIVER™ 2EDL811x* › 20 ns typical propagation delay time
› 20 V bootstrap capability on high side
› (-)7 V input robustness
Single-channel isolated EiceDRIVER™ 1EDi
Compact › 100 ns typical propagation delay time
› Functional isolation 1.2 kV separate source and sync outputs
Dual-channel isolated EiceDRIVER™ 2EDFx › 35 ns typical propagation delay time
› Functional isolation 1.5 kVCMTI > 150 V/ns
Dual-channel isolated EiceDRIVER™ 2EDSx › 35 ns typical propagation delay time
› Reinforced (safe) isolation 6 kV CMTI > 150 V/ns
Or-ing Low voltage
MOSFETs
Or-ing MOSFET OptiMOS™ 60-200 V › Industry’s lowest FOM (RDS(on)*QG) leading to high eiciency at good price/performance
› Low voltage overshoots enabling easy design-in
Battery
protection
Low voltage
MOSFETs
MOSFET OptiMOS™ 60-150V
Isolated DC-DC Low voltage
MOSFETs
Primary side
PWM MOSFET OptiMOS™ 60-200V › Industry’s lowest RDS(on)
› Highest system eiciency and power density
› Outstanding quality and reliability
› Reduces the need for a snubber circuit
StrongIRFET™ 60-200V
Small signal MOSFETs
60-200 V
Synchronous
rectification MOSFET OptiMOS™ 40-100V
StrongIRFET™ 40-100V
Or-ing MOSFET OptiMOS™ 25-30V
StrongIRFET™ 25-30V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
47
O-board DC EV charging
www.infineon.com/ev-charging
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET
600 V CoolMOS™ CFD7 / CSFD IPW60R018CFD7 600 V, 18 mΩ, TO-247
IPW60R024CFD7 600 V, 24 mΩ, TO-247
IPW60R037CSFD 600 V, 37 mΩ, TO-247
IPW60R040CFD7 600 V, 40 mΩ, TO-247
IPW60R055CFD7 600 V, 55 mΩ, TO-247
IPW60R070CFD7 600 V, 70 mΩ, TO-247
600 V CoolMOS™ C7 IPW65R045C7 650 V, 45 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R080P7 600 V, 80 mΩ, TO-247
1200 V CoolSiC™ SiC MOSFET IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy module FF6MR12W2M1_B11 1200 V, 6 mΩ, Easy 2B, half-bridge
FF8MR12W2M1_B11 1200 V, 8 mΩ, Easy 2B, half-bridge
FF11MR12W1M1_B11 1200 V, 11 mΩ, Easy 1B, half-bridge
FF23MR12W1M1_B11 1200 V, 23 mΩ, Easy 1B, half-bridge
F4-23MR12W1M1_B11 1200 V, 23 mΩ, Easy 1B, fourpack
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, sixpack
SiC Diodes
Output rectification diodes
1200 V CoolSiC™ Schottky diode generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
650 V CoolSiC™ Schottky diode generation 5 IDW12G65C5 650 V, 12 A, TO-247
IDW16G65C5 650 V, 16 A, TO-247
IDW20G65C5 650 V, 20 A, TO-247
IDW20G65C5B 650 V, 10 A, TO-247
IDW24G65C5B 650 V, 24 A, TO-247
IDW30G65C5 650 V, 30 A, TO-247
IDW32G65C5B 650 V, 32 A, TO-247
IDW40G65C5 650 V, 40 A, TO-247
IDW40G65C5B 650 V, 40 A, TO-247
650 V CoolSiC™ Schottky diode generation 6 IDH20G65C6 650 V, 20 A, TO-220
IDH16G65C6 650 V, 16 A, TO-220 real 2-pin
IDH12G65C6 650 V, 12 A, TO-220 real 2-pin
IDH10G65C6 650 V, 10 A, TO-220 real 2-pin
IDH08G65C6 650 V, 8 A, TO-220 real 2-pin
IDH06G65C6 650 V, 6 A, TO-220 real 2-pin
IDH04G65C6 650 V, 4 A, TO-220 real 2-pin
IDDD20G65C6 650 V, 20 A, Double DPAK
IDDD16G65C6 650 V, 16 A, Double DPAK
IDDD12G65C6 650 V, 12 A, Double DPAK
IDDD10G65C6 650 V, 10 A, Double DPAK
IDDD08G65C6 650 V, 8 A, Double DPAK
IDDD06G65C6 650 V, 6 A, Double DPAK
IDDD04G65C6 650 V, 4 A, Double DPAK
Infineon’s solution recommendation for DC EV charging system blocks
Our solutions are designed for harsh environmental conditions and long life time as we have an excellent understandin
g
of quality requirements. Take the next step by exploring our product portfolio for DC EV charging systems.
HV DC-DC main stage
Through extensive interaction with DC EV charging designers and being a member of CharIN, we have vast system expertise in
electric mobility as well as its automotive safety and data security. All this contributes to making vehicle chargers safe, eicient,
and fast. Based on that knowledge, Infineon provides a comprehensive oering addressing application needs of DC EV charging:
› Power semiconductor and gate driver solutions for highly eicient power conversion
› Authentication solutions for secure authentication and protection against misuse
› Encryption solutions ensuring secure communication for billing and roaming
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET / IGBT
650 V CoolMOS™ C7 IPW65R019C7 650 V, 19 mΩ, TO-247
600 V CoolMOS™ C7 IPW60R017C7 600 V, 17 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R024P7 600 V, 24 mΩ, TO-247
IPW60R037P7 600 V, 37 mΩ, TO-247
IPW60R060P7 600 V, 60 mΩ, TO-247
650 V TRENCHSTOP™ 5 H5 IKW50N65EH5/IKZ50N65EH5 650 V, 50 A, TO-247-3/4
IKW75N65EH5/IKZ75N65EH5 650 V, 75 A, TO-247-3/4
1200 V CoolSiC™ MOSFETs IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy modules F3L15MR12W2M1_B69 1200 V, 15 mΩ, Easy 2B, Vienna rectifier phase leg
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, sixpack
SiC diodes 1200 V CoolSiC™ Schottky diodes generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5
1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
PFC stage (three-phase input)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
46
47
O-board DC EV charging
O-board DC EV charging
www.infineon.com/ev-charging
What speaks for o-board DC EV charging?
With the growing number of electric vehicles (EVs), which are in some markets becoming viable alternatives to
traditional internal combustion engine vehicles, the demand for enhanced semiconductor solutions for charging
stations increases too. Currently, all eyes are on China where EVs have gained traction in the rapidly expanding middle
class, while Europe and the United States are expected to follow suit soon. However, to truly welcome EVs on a large
scale, these markets need to provide widespread availability of DC charging infrastructure so that drivers can quickly
charge their vehicles. DC charging systems are an attractive choice because they oer much faster charging than a
standard AC EV charger which many EV drivers possess. Today a DC charger with e.g. 150 kW can put a 200 km charge
on an EV battery in just 15 minutes. The improvement of charging technologies is expected to even further lower the
charging time. Consequently, o-board charging is becoming more and more attractive.
Challenges on the horizon
Reaching the next level in designing DC EV chargers confronts engineers with many new challenges.
For a DC charging design to be a long term success, you must:
› Enhance output power to shorten the charging time
› Improve power density within the set dimensions of the charging station
› Increase eiciency by boosting the load and decreasing power dissipation
› Reduce design cost per watt
Overcoming all of the mentioned issues is possible – with the right partner.
The right partner for successful DC EV charger designs
As a market leader and the global frontrunner in power electronics, Infineon enables you to bring energy-eicient DC
EV charger designs to life, with our highly eicient components and in-depth technical support. We cover power ranges
from kilowatt to megawatt in our broad portfolio of high-quality power semiconductors, microcontrollers, gate drivers
and security, safety, and authentication solutions. Our CoolMOS™ and CoolSiC™ MOSFETs, for example, are ideal in
a wide range of DC EV charging designs. Their matchless advantages include high frequency operation, high power
density and reduced switching losses, allowing you to reach high levels of eiciency in any battery charging system.
Fast EV Charging
Advanced solutions for DC EV charging
System diagram DC EV charger
Power
Control
Communication
and security
AC-DC
including
PFC
Gate driver and galvanic isolation
Internal power supply
Microcontroller
AURIX™ / XMC™
DC-DC
stage
DC power
to batteries
Communica
tion
to
car - end user
Communica
tion
to user
Human-machine
interface
(HMI)
Authentication
and
encryption
AC power in
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
47
O-board DC EV charging
www.infineon.com/ev-charging
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET
600 V CoolMOS™ CFD7 / CSFD IPW60R018CFD7 600 V, 18 mΩ, TO-247
IPW60R024CFD7 600 V, 24 mΩ, TO-247
IPW60R037CSFD 600 V, 37 mΩ, TO-247
IPW60R040CFD7 600 V, 40 mΩ, TO-247
IPW60R055CFD7 600 V, 55 mΩ, TO-247
IPW60R070CFD7 600 V, 70 mΩ, TO-247
600 V CoolMOS™ C7 IPW65R045C7 650 V, 45 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R080P7 600 V, 80 mΩ, TO-247
1200 V CoolSiC™ SiC MOSFET IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy module FF6MR12W2M1_B11 1200 V, 6 mΩ, Easy 2B, half-bridge
FF8MR12W2M1_B11 1200 V, 8 mΩ, Easy 2B, half-bridge
FF11MR12W1M1_B11 1200 V, 11 mΩ, Easy 1B, half-bridge
FF23MR12W1M1_B11 1200 V, 23 mΩ, Easy 1B, half-bridge
F4-23MR12W1M1_B11 1200 V, 23 mΩ, Easy 1B, fourpack
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, sixpack
SiC Diodes
Output rectification diodes
1200 V CoolSiC™ Schottky diode generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
650 V CoolSiC™ Schottky diode generation 5 IDW12G65C5 650 V, 12 A, TO-247
IDW16G65C5 650 V, 16 A, TO-247
IDW20G65C5 650 V, 20 A, TO-247
IDW20G65C5B 650 V, 10 A, TO-247
IDW24G65C5B 650 V, 24 A, TO-247
IDW30G65C5 650 V, 30 A, TO-247
IDW32G65C5B 650 V, 32 A, TO-247
IDW40G65C5 650 V, 40 A, TO-247
IDW40G65C5B 650 V, 40 A, TO-247
650 V CoolSiC™ Schottky diode generation 6 IDH20G65C6 650 V, 20 A, TO-220
IDH16G65C6 650 V, 16 A, TO-220 real 2-pin
IDH12G65C6 650 V, 12 A, TO-220 real 2-pin
IDH10G65C6 650 V, 10 A, TO-220 real 2-pin
IDH08G65C6 650 V, 8 A, TO-220 real 2-pin
IDH06G65C6 650 V, 6 A, TO-220 real 2-pin
IDH04G65C6 650 V, 4 A, TO-220 real 2-pin
IDDD20G65C6 650 V, 20 A, Double DPAK
IDDD16G65C6 650 V, 16 A, Double DPAK
IDDD12G65C6 650 V, 12 A, Double DPAK
IDDD10G65C6 650 V, 10 A, Double DPAK
IDDD08G65C6 650 V, 8 A, Double DPAK
IDDD06G65C6 650 V, 6 A, Double DPAK
IDDD04G65C6 650 V, 4 A, Double DPAK
Infineon’s solution recommendation for DC EV charging system blocks
Our solutions are designed for harsh environmental conditions and long life time as we have an excellent understandin
g
of quality requirements. Take the next step by exploring our product portfolio for DC EV charging systems.
HV DC-DC main stage
Through extensive interaction with DC EV charging designers and being a member of CharIN, we have vast system expertise in
electric mobility as well as its automotive safety and data security. All this contributes to making vehicle chargers safe, eicient,
and fast. Based on that knowledge, Infineon provides a comprehensive oering addressing application needs of DC EV charging:
› Power semiconductor and gate driver solutions for highly eicient power conversion
› Authentication solutions for secure authentication and protection against misuse
› Encryption solutions ensuring secure communication for billing and roaming
Product category Product family Product Additional information
High voltage MOSFET /
SiC MOSFET / IGBT
650 V CoolMOS™ C7 IPW65R019C7 650 V, 19 mΩ, TO-247
600 V CoolMOS™ C7 IPW60R017C7 600 V, 17 mΩ, TO-247
600 V CoolMOS™ P7 IPW60R024P7 600 V, 24 mΩ, TO-247
IPW60R037P7 600 V, 37 mΩ, TO-247
IPW60R060P7 600 V, 60 mΩ, TO-247
650 V TRENCHSTOP™ 5 H5 IKW50N65EH5/IKZ50N65EH5 650 V, 50 A, TO-247-3/4
IKW75N65EH5/IKZ75N65EH5 650 V, 75 A, TO-247-3/4
1200 V CoolSiC™ MOSFETs IMW120R045M1/IMZ120R045M1 1200 V, 45 mΩ, TO-247-3/4
1200 V CoolSiC™ Easy modules F3L15MR12W2M1_B69 1200 V, 15 mΩ, Easy 2B, Vienna rectifier phase leg
FS45MR12W1M1_B11 1200 V, 45 mΩ, Easy 1B, sixpack
SiC diodes 1200 V CoolSiC™ Schottky diodes generation 5 IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2
IDW20G120C5B/IDWD20G120C5
1200 V, 20 A, TO-247-3/2
IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2
PFC stage (three-phase input)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
49
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
48
49
www.infineon.com/ev-charging
Product category Product family Product Additional information
Gate driver ICs EiceDRIVER™ (non-isolated) 1EDN family, 2EDN family Single-channel/dual-channel, non-isolated low-side gate driver ICs
EiceDRIVER™ 500-700 V level
shi gate driver
IR2214SS 1200 V half-bridge gate driver for IGBTs and MOSFETs with level-shi
technology
EiceDRIVER™
(galvanic isolation)
2EDF7175F, 2EDF7275F Dual-channel functional isolated (1,5 kV)
2EDS8265H, 2EDS8165H Dual-channel reinforced (safe) isolated (6 kV)
1EDI40I12AF/H, 1EDI60I12AF/H,
1EDC40I12AH, 1EDC60I12AH
600 V / 650 V single-channel, galvanic isolated driver with separate
source and sink outputs to drive CoolMOS™ SJ MOSFETs in floating
mode as in Vienna rectifier variants
1EDC20H12AH, 1EDC60H12AH,
1ED020I12-F2, 2ED020I12-F2
1200 V, single-channel/dual-channel, galvanic isolated driver recommen-
ded to drive CoolSiC™ MOSFETs and CoolSiC™ EasyPack™ power modules
1EDI30I12MF/H, 1EDC30I12H,
1EDI10I12MF/H, 1EDC10I12MH
1200 V, single-channel, galvanic isolated driver with integrated Miller clamp
to drive TRENCHSTOP™ 5 H5 IGBTs
Product category Product family Product Additional information
Security OPTIGA™ Trust B SLE952500000XTSA1
Assymetric ECC authentication with individual certificate key pair and
an extended temperature range of -40 to 110°C
OPTIGA™ Trust TPM SLB9670XQ2.0
Fully TCG TPM 2.0 standard compliant module with the SPI interface
SLC37 SLC37ESA2M0,
SLI97CSIFX1M00PE
New class of performance and security cryptocontroller adhering to
CC EAL6+ high targeted and EMVCo targeted certifications for payment
and eSIM applications
Product category Product family Product Additional information
AC-DC power conversion CoolSET™ 5 QR/FF flyback ICE5QR0680AG 800 V, 42 W, 710 mΩ, PG-DSO-12
ICE5AR0680AG 800 V, 42 W, 710 mΩ, PG-DSO-12
5
th
generation PWM controllers
and CoolMOS™ P7
ICE5QSAG and IPP80R360P7 800 V, 360 mΩ, TO-220
ICE5QSAG and IPA95R450P7 950 V, 450 mΩ , TO-220 FP
CoolMOS™ HV SJ MOSFETs IPN95R1K2P7 950 V, 450 mΩ, SOT-223
IPN80R1K4P7 800 V, 1.4 Ω, SOT-223
Authentication and encryption
As embedded systems are increasingly becoming targets of attackers, Infineon oers OPTIGA™ - a turnkey security solution.
Gate driver and galvanic isolation
Internal power supply
Product category Product family Product Additional information
Microcontroller XMC™ XMC1400 family (PFC stage) ARM® Cortex® M0 based microcontroller
XMC4500/4700
(HV DC-DC/PWM stage)
ARM® Cortex® M4F based microcontroller
AURIX™ TC26X/TC27X
TC36X/TC37X
TriCore™ AURIX™ 32-bit microcontroller
HSM (hardware secure module) full EVITA compliance
Microcontroller
O-board DC EV charging
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
49
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
51
UPS
Oline UPS
Bidirectional UPS power stage
Full-bridge bidirectional power stage Push-pull bidirectional power stage
Bidirectional
charger / inverter
Battery
12 V / 24 V
Grid Load
Sensing
www.infineon.com/ups
Battery voltage Topology MOSFET
breakdown voltage
TO-220 TO-247 D
2
PAK and D
2
PAK-7 Gate drivers
Inverter/charger
MOSFETs
12 V Push-pull 60 V IRFB7530
IRFB7534
IRFB7540
IRFB7545
IRFP3006
IRFP7530
IRFP7537
IRFS7530
IRFS7530-7P
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 30 V
40 V
IRLB3813
IRLB8314
IRLB8743
IRFB7430 (40 V)
IRFP7430 IRFS7430 (40 V)
IRFS7430-7P (40 V)
IRS211X
IRS2186
2EDL811X
24 V Push-pull 75 V
100 V
IRFB3077
IRFB3207
IRFB7730
IRFB7734
IRFP7718 IRFS7730
IRFS7734
IRF3610S (100 V)
IRFS4010 (100 V)
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 40 V
60 V
IRFB7430
IRFB7434
IRFB7545 (60 V)
IRF60B217 (60 V)
IRFP7530
IRFP3006
IRFP7537
IRFS7430
IRFS7430-7P
IRF7430
IRFS7530-7P
IRS211X
IRS2186
2EDL811X
48 V Push-pull 150 V IRFB4115
IRFB4321
IPP046N15N5
IRFB4228
IRFB4019
IRFP4568
IRFP4321
IRF150P220
IRF150P221
IRFS4321
IRFS4115
RB048N15N5
IRFS4615
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 100 V IPP030N10N
IRFB4110
IPP086N10N3G
IRFB4510
IPP180N10N3G
IRFP4468
IRFP4110
IRF100P218
IRF100P219
IRFS3610
IRF3710S
IRF8010S
IRFS4510
IRFS4010
IRS211X
IRS2186
2EDL811X
72 V Push-pull 200 V IPP110N20N3
IRFB4127
IRFB4227
IPP320N20N3
IRFB4320
IRF200P222
IRFP4668
IRF200P223
IRFP4127
IRFP4227
IPB110N20N3LF
IRFS4127
IRFS4227
IRFB117N20NFD
IRF200S234
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 150 V IRFB4321
IPP046N15N5
IRFP4568
IRF150P220
IRFS4321
IRB048N15N5
IRS211X
IRS2186
2EDL811X
Full-bridge 200 V IPP110N20N3
IRFB4227
IRF200P222
IRFP4668
IPB110N20N3LF
IRFS4127
IRS211X
IRS2186
2EDL811X
Microcontrollers 12-72 V XMC1300 series
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LF transformer
StrongIRFET™
HB driver
Grid
HB driver
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LS
gate driver
LS
gate driver LF transformer
StrongIRFET™
Grid
Tap select
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
50
51
UPS
Uninterruptible power supply (UPS)
Attractive solutions for highest eiciency and power density
Today’s uninterruptible power supply systems introduce a wide range of challenges. Overcoming them requires an
increase in output power, power density and energy eiciency. For all your UPS power supply applications, Infineon’s
high quality products provide you with complete system level solutions. Equipped with our semiconductors, UPS
applications can achieve best-possible power conversion eiciency and cutting-edge power density. The benefits are
cost reduction and fewer passive components – regardless of the topology used.
By choosing Infineon’s products for UPS applications you get solutions that fulfill the latest market requirements. This
includes the trend of modularization of UPS brick units due to scalable power demand from data centers, as well as
the topology shi from two-level to three-level to achieve higher eiciency. Our products are suitable for any kind of
uninterruptible power supplies in telecom, data center, server or industrial automation environments.
www.infineon.com/ups
Oline UPS
CoolMOS™ SJ MOSFETs
500-950 V
OptiMOS™ and StrongIRFET™
20-300 V
Online UPS
MOSFETs
IGBTs
Auxiliary power supply
TRENCHSTOP™ IGBT6
TRENCHSTOP™ 5 H5
CoolSET™
650-800 V
SiC diodes
Driver ICs
EiceDRIVER™ 1EDN
EiceDRIVER™ 2EDN
XMC1300 series
CoolSiC™
Schottky diode
EiceDRIVER™ 1ED Compact
Power module and stack
Microcontrollers
EasyPACK™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
51
UPS
Oline UPS
Bidirectional UPS power stage
Full-bridge bidirectional power stage Push-pull bidirectional power stage
Bidirectional
charger / inverter
Battery
12 V / 24 V
Grid Load
Sensing
www.infineon.com/ups
Battery voltage Topology MOSFET
breakdown voltage
TO-220 TO-247 D
2
PAK and D
2
PAK-7 Gate drivers
Inverter/charger
MOSFETs
12 V Push-pull 60 V IRFB7530
IRFB7534
IRFB7540
IRFB7545
IRFP3006
IRFP7530
IRFP7537
IRFS7530
IRFS7530-7P
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 30 V
40 V
IRLB3813
IRLB8314
IRLB8743
IRFB7430 (40 V)
IRFP7430 IRFS7430 (40 V)
IRFS7430-7P (40 V)
IRS211X
IRS2186
2EDL811X
24 V Push-pull 75 V
100 V
IRFB3077
IRFB3207
IRFB7730
IRFB7734
IRFP7718 IRFS7730
IRFS7734
IRF3610S (100 V)
IRFS4010 (100 V)
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 40 V
60 V
IRFB7430
IRFB7434
IRFB7545 (60 V)
IRF60B217 (60 V)
IRFP7530
IRFP3006
IRFP7537
IRFS7430
IRFS7430-7P
IRF7430
IRFS7530-7P
IRS211X
IRS2186
2EDL811X
48 V Push-pull 150 V IRFB4115
IRFB4321
IPP046N15N5
IRFB4228
IRFB4019
IRFP4568
IRFP4321
IRF150P220
IRF150P221
IRFS4321
IRFS4115
RB048N15N5
IRFS4615
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 100 V IPP030N10N
IRFB4110
IPP086N10N3G
IRFB4510
IPP180N10N3G
IRFP4468
IRFP4110
IRF100P218
IRF100P219
IRFS3610
IRF3710S
IRF8010S
IRFS4510
IRFS4010
IRS211X
IRS2186
2EDL811X
72 V Push-pull 200 V IPP110N20N3
IRFB4127
IRFB4227
IPP320N20N3
IRFB4320
IRF200P222
IRFP4668
IRF200P223
IRFP4127
IRFP4227
IPB110N20N3LF
IRFS4127
IRFS4227
IRFB117N20NFD
IRF200S234
IRS44273
IRS4427
1EDN851X
2EDN852X
Full-bridge 150 V IRFB4321
IPP046N15N5
IRFP4568
IRF150P220
IRFS4321
IRB048N15N5
IRS211X
IRS2186
2EDL811X
Full-bridge 200 V IPP110N20N3
IRFB4227
IRF200P222
IRFP4668
IPB110N20N3LF
IRFS4127
IRS211X
IRS2186
2EDL811X
Microcontrollers 12-72 V XMC1300 series
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LF transformer
StrongIRFET™
HB driver
Grid
HB driver
Battery +
XMC1300
PWM
generation
ADC
Display
drive
Battery -
LS
gate driver
LS
gate driver LF transformer
StrongIRFET™
Grid
Tap select
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
53
Unidirectional inverter stage
Unidirectional charger
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 Gate drivers
200 V Full-bridge inverter
120 VAC
300 V IPP410N30N
IRFB4137
IRF300P226
IRF300P227
IRFP4868
IRFP4137
IRS211X
IRS2186
400 V Full-bridge inverter
220 VAC
500 V IPP50R280CE
IPP50R380CE
IPP50R190CE
IPW50R190CE IRS211X
IRS2186
Microcontrollers XMC1300 series
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 PG-DIP-7
12-72 V Flyback 650 V CoolSET™ ICE3RBR1765JZ
ICE3RBR0665JZ
12-72 V Flyback 800 V CoolMOS™ P7 IPP80R750P7
IPP80R600P7
IPP80R450P7
IPP80R360P7
IPP80R280P7
Microcontrollers Integrated, ICE3AS03LJG, ICE3BS03LJG
www.infineon.com/ups
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
52
53
Unidirectional
Unidirectional power stage (output stage)
Battery
12 V / 24 V
AC-DC
charger
DC-DC
step up Inverter + filter
Multistage
Grid Load
Sensing
Unidirectional DC-DC stage
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 D
2
PAK and D
2
PAK-7 Gate drivers
12 V Push-pull 40 V IRFB7430
IRFB7434
IRFP7718 IRFS7430
IRFS7430-7P
IRF7430
IRS44273
IRS4427
1EDN851X
2EDN852X
60 V IRFB7540
IRFB7545
IRF60B217
IRFS7530-7P
75 V IRFP7718
24 V Push-pull 75 V IRFB3077
IRFB3207
IRFB7730
IRFB7734
IRFP7718 IRFS7730
IRFS7734
100 V IRF100P218
IRFP4468
IRFS4010
IRF3610S
150 V IRFB4115
IRFB4321
IPP046N15N5
IRFB4228
IRFB4019
IRF150P220
IRFS4321
IRFS4115
IRB048N15N5
IRFS4615
Microcontrollers XMC1300 series
www.infineon.com/ups
UPS
Battery +
XMC1300
HB
driver
PWM
generation
ADC
Display
drive
HB
driver
Battery -
LS
gate driver
LS
gate driver HF transformer
Grid
DC-DC stage Inverter stage
CoolMOS™
StrongIRFET™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
53
Unidirectional inverter stage
Unidirectional charger
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 Gate drivers
200 V Full-bridge inverter
120 VAC
300 V IPP410N30N
IRFB4137
IRF300P226
IRF300P227
IRFP4868
IRFP4137
IRS211X
IRS2186
400 V Full-bridge inverter
220 VAC
500 V IPP50R280CE
IPP50R380CE
IPP50R190CE
IPW50R190CE IRS211X
IRS2186
Microcontrollers XMC1300 series
Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 PG-DIP-7
12-72 V Flyback 650 V CoolSET™ ICE3RBR1765JZ
ICE3RBR0665JZ
12-72 V Flyback 800 V CoolMOS™ P7 IPP80R750P7
IPP80R600P7
IPP80R450P7
IPP80R360P7
IPP80R280P7
Microcontrollers Integrated, ICE3AS03LJG, ICE3BS03LJG
www.infineon.com/ups
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
55
Infineon provides a comprehensive portfolio to deliver the best eiciency and reliability for solar applications. Infineon’s
cutting edge technologies such as CoolMOS™ SJ MOSFETs, HighSpeed3 IGBT and TRENCHSTOP™ 5, CoolSiC™ Schottky
diodes, CoolSiC™ MOSFETs, coreless transformer, driver, etc. combined with the rich experience and highest quality
ensure the company’s leader position in solar applications. The newly added ARM® Cortex™-M4 based MCU enables easy
and high eiciency design.
Infineon’s products for complete solar system
Solar
High eiciency designs for solar power systems
Optimizer
250-750 W
Single/Dual microinverter
250-600 W; 900 W
String inverter
1-60 kw
Schottky diode BAT165 Schottky diode
Auxiliary power supply CoolSET™
800 V
MOSFETs OptiMOS™
SuperSO8/DirectFET™ | 75-150 V
CoolMOS™
D2PAK/ThinPAK | 600-800 V
CoolMOS™
TO-247 | 600 V/650 V | 19-99 m
OptiMOS™
150-300 V
Microcontrollers XMC1xxx ARM® Cortex®-M0 XMC1xxx ARM® Cortex®-M0XMC1xxx ARM® Cortex®-M0
XMC45xx ARM® Cortex®-M4 XMC45xx ARM® Cortex®-M4XMC45xx ARM® Cortex®-M4
SiC diodes CoolSiC™ Schottky diodes
DPAK/TO-220 | 600 V/1200 V
DPAK | 650 V
CoolSiC™ Schottky diodes
TO-220/TO-247 | 650 V/1200 V
Easy 1B/2B
650 V TRENCHSTOP™ 5 / 1200 V TRENCHSTOP™ IGBT6
TO-247-3/TO-247-4/TO-247PLUS | 600 V/650 V/1200 V
Gate driver ICs EiceDRIVER™ 1ED Compact
EiceDRIVER™ Enhanced
1ED020I12-F2/2ED020I12-F2
Central inverter
500-5000 kW
XMC1xxx ARM® Cortex®-M0
XMC45xx ARM® Cortex®-M4
PrimePACK™ / EconoDUAL™ 3 / MIPAQ™ Pro
EiceDRIVER™ Enhanced
1ED020I12-F2/2ED020I12-F2
2EDN EiceDRIVER™
OptiMOS™
SuperSO8 | 60-200 V
CoolSiC™ MOSFET
TO-247-3/TO-247-4 | 1200 V
IGBTs
Grid
Photovoltaic
panels
EiceDRIVER™
...
Sensing
MPPT
calculation
PWM
generation ADC
MCU with ARM® Cortex®-M4
MPP tracker
DC-DC conversion
DC-AC
conversion
EiceDRIVER™ Sensing
Auxiliary power
supply
Energy storage
(optional)
EiceDRIVER™
Sensing
Battery management
...
...
www.infineon.com/solar
Solar
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
54
55
Active
front end
or
rectifier
Inverter
Microcontroller
Auxiliary power
supply
voltage
regulation
Gate driver
+
isolation
Gate driver
+
isolation
Grid Load
Communication
interface
Battery charger
Online UPS
Online UPS power stage
Stage Topology Voltage class Technology Part number
Rectifier Three-phase 800 V/1600 V EasyBRIDGE, EconoBRIDGE™
PFC Boost PFC / Vienna “T-type” 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
Boost PFC / Vienna rectifier 1200 V CoolSiC™ MOSFET F3L15MR12W2M1_B69
Boost PFC / Vienna “T-type” 650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
Boost PFC 600 V/1200 V EasyPACK™
Boost PFC 1200 V CoolSiC ™ Schottky diode
PFC 600 V CoolMOS™ P7 IPP60R060P7
IPB60R060P7
PFC 600 V CoolMOS™ C7 IPP60R040C7
IPB60R040C7
Inverter NPC 1 650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ75N65EH5
NPC 1 650 V TRENCHSTOP™ 5 S5 IKW50N65ES5
IKW75N65ES5
NPC 1 650 V TRENCHSTOP™ HighSpeed3 IGBT
Rapid diode
FS3L50R07W2H3F_B11
NPC 2 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
NPC 2 1200 V CoolSiC ™ Schottky diode
NPC 2 1200 V TRENCHSTOP™ HighSpeed3 IGBT
Rapid diode
FS3L25R12W2H3_B11
F3L200R12W2H3_B11
F3L200R12W2H3_B47
NPC 2 650 V TRENCHSTOP™ 5 S5 IKW50N65ES5
IKW75N65ES5
Two-level 1200 V EconoPACK™ , EasyPACK™ FS75R12W2T4_B11
FS200R12KT4R_B11
Two-level 1200 V EconoDUAL™ FF600R12ME4_B11
Three-level NPC1 600 V/1200 V EconoPACK™ F3L300R07PE4
Battery charger Half-bridge 1200 V TRENCHSTOP™ IGBT6 IKW40N120CS6
IKQ75N120CS6
1200 V CoolSiC™ MOSFET FF6MR12W2M1_B11
650 V TRENCHSTOP™ 5 H5 IKW50N65EH5
IKW75N65EH5
Gate driver ICs Single-channel 1200 V EiceDRIVER™ 1ED Compact
AUX - 650-800 V CoolSET™
www.infineon.com/ups
UPS
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
55
Infineon provides a comprehensive portfolio to deliver the best eiciency and reliability for solar applications. Infineon’s
cutting edge technologies such as CoolMOS™ SJ MOSFETs, HighSpeed3 IGBT and TRENCHSTOP™ 5, CoolSiC™ Schottky
diodes, CoolSiC™ MOSFETs, coreless transformer, driver, etc. combined with the rich experience and highest quality
ensure the company’s leader position in solar applications. The newly added ARM® Cortex™-M4 based MCU enables easy
and high eiciency design.
Infineon’s products for complete solar system
Solar
High eiciency designs for solar power systems
Optimizer
250-750 W
Single/Dual microinverter
250-600 W; 900 W
String inverter
1-60 kw
Schottky diode BAT165 Schottky diode
Auxiliary power supply CoolSET™
800 V
MOSFETs OptiMOS™
SuperSO8/DirectFET™ | 75-150 V
CoolMOS™
D2PAK/ThinPAK | 600-800 V
CoolMOS™
TO-247 | 600 V/650 V | 19-99 m
OptiMOS™
150-300 V
Microcontrollers XMC1xxx ARM® Cortex®-M0 XMC1xxx ARM® Cortex®-M0XMC1xxx ARM® Cortex®-M0
XMC45xx ARM® Cortex®-M4 XMC45xx ARM® Cortex®-M4XMC45xx ARM® Cortex®-M4
SiC diodes CoolSiC™ Schottky diodes
DPAK/TO-220 | 600 V/1200 V
DPAK | 650 V
CoolSiC™ Schottky diodes
TO-220/TO-247 | 650 V/1200 V
Easy 1B/2B
650 V TRENCHSTOP™ 5 / 1200 V TRENCHSTOP™ IGBT6
TO-247-3/TO-247-4/TO-247PLUS | 600 V/650 V/1200 V
Gate driver ICs EiceDRIVER™ 1ED Compact
EiceDRIVER™ Enhanced
1ED020I12-F2/2ED020I12-F2
Central inverter
500-5000 kW
XMC1xxx ARM® Cortex®-M0
XMC45xx ARM® Cortex®-M4
PrimePACK™ / EconoDUAL™ 3 / MIPAQ™ Pro
EiceDRIVER™ Enhanced
1ED020I12-F2/2ED020I12-F2
2EDN EiceDRIVER™
OptiMOS™
SuperSO8 | 60-200 V
CoolSiC™ MOSFET
TO-247-3/TO-247-4 | 1200 V
IGBTs
Grid
Photovoltaic
panels
EiceDRIVER™
...
Sensing
MPPT
calculation
PWM
generation ADC
MCU with ARM® Cortex®-M4
MPP tracker
DC-DC conversion
DC-AC
conversion
EiceDRIVER™ Sensing
Auxiliary power
supply
Energy storage
(optional)
EiceDRIVER™
Sensing
Battery management
...
...
www.infineon.com/solar
Solar
Optimizer
DC 20 V to 150 V
45 V (typ.) ~ DC 80 V (typ.)
MPPT
calculation PWM
generation ADC
XMC1000
OptiMOS™
OptiMOS™
OptiMOS™ OptiMOS™
PV
Microcontroller
power supply
Gate driver ICs
OptiMOS™ MOSFETs for optimizer DC-DC power conversion
Input
voltage
Topology MOSFET
breakdown voltage
SuperSO8 S308/PQFN 3.3 x 3.3 DirectFET™ D
2
PAK and DPAK
Up to 48 V Buck-boost 60 V BSC012N06NS
BSC016N06NS
BSZ042N06NS BSB028N06NN3G IPB026N06N
Up to 64 V Buck-boost 80 V BSC027N08NS5
BSC040N08NS5
BSC052N08NS5
BSC117N08NS5
BSZ075N08NS5
BSZ084N08NS5
BSZ110N08NS5
BSB044N08NN3G IPB017N08N5
IPB031N08N5
IPB049N08N5
Up to 80 V Buck-boost 100 V BSC035N10NS5
BSC040N10NS5
BSC060N10NS3
BSZ097N10NS5 BSB056N10NN3
BSF134N10NJ3G
IPB020N10N5
Up to 125 V Buck-boost 200 V BSC320N20NS3G BSZ900N20NS3 G – IPD320N20N3G
Microcontrollers for power optimizer
Topology Package Voltage class Technology
Microcontroller All All XMC1000
Microcontroller supply Linear voltage regulator Up to 20 V IFX1763, IFX54441, IFX54211
Microcontroller All All XMC4000
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
57
Solar
www.infineon.com/solar
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
56
57
Solar
Microinverter
DC 20 V to 90 V
45 V (typ.)
MPPT
calculation PWM
generation ADC
XMC1000/XMC4000
OptiMOS™OptiMOS™
OptiMOS™OptiMOS™
CoolMOS™ CoolMOS™
CoolMOS™CoolMOS™
CoolSiC™
Schottky diode
CoolSiC™
Schottky diode
CoolSiC™
Schottky diode
CoolSiC™
Schottky diode
PV Grid
Microcontroller
power supply
Gate driver ICs Gate driver ICs
OptiMOS™ power MOSFETs for microinverter
CoolMOS™ SJ MOSFETs for microinverter CoolSiC™ Schottky diodes for microinverter
Microcontrollers for microinverter
Input voltage Topology MOSFET breakdown voltage SuperSO8 DirectFET™ D
2
PAK
Up to 48 V Half-bridge, full-bridge,
LLC and other resonant
topologies
60V BSC012N06NS
BSC019N06NS
BSC028N06NS
BSC039N06NS
BSB028N06NN3G –
Up to 64 V Half-bridge, full-bridge,
LLC and other resonant
topologies
80V BSC030N08NS5
BSC037N08NS5
BSC052N08NS5
BSB044N08NN3G
BSB104N08NP3
–
Up to 80V Half-bridge, full-bridge,
LLC and other resonant
topologies
100V BSC035N10NS5
BSC040N10NS5
– IPB020N10N5
Up to 60V Flyback 150V BSC093N15NS5
BSC108N15NS5
BSC160N15NS5
BSC175N15NS5
BSB165N15NZ3 IPB041N15N5
IPB063N15N5
IPB108N15N3G
Push-pull 200V BSC320N20NS3G – IPB107N20N3G
Topology Package Voltage class Part number
Current source D²PAK 800V SPB17N80C3
Current/voltage
source
D²PAK 650V IPB65R190C7
IPB65R125C7
IPB65R095C7
IPB65R065C7
IPB65R045C7
ThinPAK 8x8 600V IPL60R185P7
IPL60R125P7
IPL60R105P7
IPL60R085P7
IPL60R065P7
IPL60R185C7
IPL60R125C7
IPL60R104C7
IPL60R065C7
650V IPL65R195C7
IPL65R130C7
IPL65R099C7
IPL65R070C7
Topology Package Voltage class Part number
Rectifier TO-252 (DPAK) 1200V IDM02G120C5
IDM05G120C5
IDM08G120C5
600 V IDD05SG60C
D
2
PAK 650 V IDK04G65C5
Topology Package Voltage class Technology
Microcontroller All All XMC1000
Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441,
IFX54211
Microcontroller All All XMC4000
Functional block Product
category
Product
family
Benefits
PFC, PWM/
resonant
converter,
synchronous
rectification
Gate driver ICs EiceDRIVER™
1ED Compact › 100 ns typical propagation
delay time
› Functional isolation
› Separate source
EiceDRIVER™
2EDNx › 8 V UVLO option
› (-)10V input robustness
› Output robust against
reverse current
www.infineon.com/solar
Optimizer
DC 20 V to 150 V
45 V (typ.) ~ DC 80 V (typ.)
MPPT
calculation PWM
generation ADC
XMC1000
OptiMOS™
OptiMOS™
OptiMOS™ OptiMOS™
PV
Microcontroller
power supply
Gate driver ICs
OptiMOS™ MOSFETs for optimizer DC-DC power conversion
Input
voltage
Topology MOSFET
breakdown voltage
SuperSO8 S308/PQFN 3.3 x 3.3 DirectFET™ D
2
PAK and DPAK
Up to 48 V Buck-boost 60 V BSC012N06NS
BSC016N06NS
BSZ042N06NS BSB028N06NN3G IPB026N06N
Up to 64 V Buck-boost 80 V BSC027N08NS5
BSC040N08NS5
BSC052N08NS5
BSC117N08NS5
BSZ075N08NS5
BSZ084N08NS5
BSZ110N08NS5
BSB044N08NN3G IPB017N08N5
IPB031N08N5
IPB049N08N5
Up to 80 V Buck-boost 100 V BSC035N10NS5
BSC040N10NS5
BSC060N10NS3
BSZ097N10NS5 BSB056N10NN3
BSF134N10NJ3G
IPB020N10N5
Up to 125 V Buck-boost 200 V BSC320N20NS3G BSZ900N20NS3 G – IPD320N20N3G
Microcontrollers for power optimizer
Topology Package Voltage class Technology
Microcontroller All All XMC1000
Microcontroller supply Linear voltage regulator Up to 20 V IFX1763, IFX54441, IFX54211
Microcontroller All All XMC4000
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
57
Solar
www.infineon.com/solar
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
59
Solar
Three-phase string inverter
Discrete power devices for string inverter
Inverter type Function Product series Voltage class Part number
Single-phase Boost CoolMOS™ C7 600 V IPW60R040C7
CoolSiC™ diode 650 V IDW20G65C5
DC-DC CoolMOS™ P7 600 V IPW60R037P7
CoolSiC™ diode 650 V IDW20G65C5
Rapid diode 650 V IDW15E65D2
Inverter TRENCHSTOP™ IGBT3 600 V IKW40N60H3
TRENCHSTOP™ 5 H5 650 V IKW40N65H5
CoolMOS™ P7 600 V IPW60R037P7
Three-phase Boost TRENCHSTOP™ IGBT6 1200 V IKW40N120CS6
IKQ75N120CS6
IKY75N120CS6
CoolSiC™ MOSFET 1200 V IMW120R045M1
IMZ120R045M1
CoolSiC™Schottky diode
generation 5
1200 V IDW20G120C5B
IDW30G120C5B
IDW40G120C5B
Inverter TRENCHSTOP™ IGBT6 1200 V IKW40N120CS6
IKQ75N120CS6
IKY75N120CS6
TRENCHSTOP™ 5 S5 650 V IKW40N65ES5
TRENCHSTOP™ 5 L5 650 V IKW30N65EL5
Voltage class Part number
800V ICE3AR2280JZ
650V ICE3BR1765JZ
CoolSET™ for string inverter
Power device Driving method Voltage class Part number
IGBT/SiC MOSFET Single-channel 1200V EiceDRIVER™ 1ED Compact
EiceDRIVER™ Enhanced 1ED020I12-F2
IGBT/SiC MOSFET Half-bridge and
high- and low-side
1200V EiceDRIVER™ Enhanced 2ED020I12-F2/FI
Gate driver ICs for string inverter
Microcontrollers for string inverter
Inverter
PV
PV
EiceDRIVER™
...
Sensors
MPPT
calculation PWM
generation ADC
XMC4000
MPPT
PWM
Boost
1200 V TRENCHSTOP™ IGBT6/
CoolSiC™ MOSFET
<1000 V
(typ.)3~
Grid
650 V
TRENCHSTOP™ 5
Grid
Microcontroller
power supply
EiceDRIVER™
...
Phase A
Phase B
Phase C
1200 V
CoolSiC™
Schottky
diode
1200 V
CoolSiC™
MOSFET
1200 V TRENCHSTOP™ IGBT6/
CoolSiC™ MOSFET
Topology Package Voltage class Technology
Microcontroller All All XMC1000
Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211
Microcontroller All All XMC4000
www.infineon.com/solar
www.infineon.com/igbtmodules1200v
For Infineon’s extensive module portfolio for string and central inverters, visit:
Inverter
PV
PV
EiceDRIVER™
...
EiceDRIVER™
...
Sensors
MPPT
calculation
PWM
generation ADC
XMC4000MPPT
PWM
Boost
CoolMOS™
TRENCHSTOP™ 5/TRENCHSTOP™ IGBT6
TRENCHSTOP™ 5/TRENCHSTOP™ IGBT6
< 600 VDC
(typ.)
Grid
Microcontroller
power supply
CoolSiC™
Schottky
diode/
Rapid diode
Single-phase string inverter
(non-isolated) – standard solution
Single-phase string inverter – multilevel topology
Topology MOSFET breakdown
voltage
Family SuperSO8 D
2
PAK TO-220 TO-247
Flying-capacitor-based active
neutral-point-clamp multilevel inverter
150 V OptiMOS™ 5 BSC093N15NS5
BSC110N15NS5
BSC160N15NS5
IPB044N15N5
IPB048N15N5
IPB060N15N5
IPB073N15N5
IPP051N15N5
IPP076N15N5
–
PV
PV
EiceDRIVER™ EiceDRIVER™ Sensors
MPPT
calculation
PWM
generation
ADC
XMC4000
MPPT
PWM
Boost
CoolMOS™/ IGBT
OptiMOS™ 5
OptiMOS™ 5
OptiMOS™ 5OptiMOS™ 5
OptiMOS™ 5
OptiMOS™ 5OptiMOS™ 5
PV
Grid
Multilevel inverter
Microcontroller
power supply
SiC diode /
Rapid diode
OptiMOS™ 5
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
58
59
www.infineon.com/solar
In multilevel inverter, four high voltage MOSFETs/IGBTs in H-bridge topology are replaced with a higher number of
lower voltage MOSFETs. Compared to a conventional H-bridge inverter, a multilevel inverter, composed of lower
voltage MOSFETs, oers several advantages:
› With much lower RDS(on) and switching loss parameters it significantly reduces conduction and switching losses
› Higher eective output frequency (smaller magnetics) is possible with lower switching losses
› Improved EMC due to reduced switching voltages
› Significant reduction in cooling system, size and weight
Discrete power devices for multilevel string inverter
Solar
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
59
Solar
Three-phase string inverter
Discrete power devices for string inverter
Inverter type Function Product series Voltage class Part number
Single-phase Boost CoolMOS™ C7 600 V IPW60R040C7
CoolSiC™ diode 650 V IDW20G65C5
DC-DC CoolMOS™ P7 600 V IPW60R037P7
CoolSiC™ diode 650 V IDW20G65C5
Rapid diode 650 V IDW15E65D2
Inverter TRENCHSTOP™ IGBT3 600 V IKW40N60H3
TRENCHSTOP™ 5 H5 650 V IKW40N65H5
CoolMOS™ P7 600 V IPW60R037P7
Three-phase Boost TRENCHSTOP™ IGBT6 1200 V IKW40N120CS6
IKQ75N120CS6
IKY75N120CS6
CoolSiC™ MOSFET 1200 V IMW120R045M1
IMZ120R045M1
CoolSiC™Schottky diode
generation 5
1200 V IDW20G120C5B
IDW30G120C5B
IDW40G120C5B
Inverter TRENCHSTOP™ IGBT6 1200 V IKW40N120CS6
IKQ75N120CS6
IKY75N120CS6
TRENCHSTOP™ 5 S5 650 V IKW40N65ES5
TRENCHSTOP™ 5 L5 650 V IKW30N65EL5
Voltage class Part number
800V ICE3AR2280JZ
650V ICE3BR1765JZ
CoolSET™ for string inverter
Power device Driving method Voltage class Part number
IGBT/SiC MOSFET Single-channel 1200V EiceDRIVER™ 1ED Compact
EiceDRIVER™ Enhanced 1ED020I12-F2
IGBT/SiC MOSFET Half-bridge and
high- and low-side
1200V EiceDRIVER™ Enhanced 2ED020I12-F2/FI
Gate driver ICs for string inverter
Microcontrollers for string inverter
Inverter
PV
PV
EiceDRIVER™
...
Sensors
MPPT
calculation PWM
generation ADC
XMC4000
MPPT
PWM
Boost
1200 V TRENCHSTOP™ IGBT6/
CoolSiC™ MOSFET
<1000 V
(typ.)3~
Grid
650 V
TRENCHSTOP™ 5
Grid
Microcontroller
power supply
EiceDRIVER™
...
Phase A
Phase B
Phase C
1200 V
CoolSiC™
Schottky
diode
1200 V
CoolSiC™
MOSFET
1200 V TRENCHSTOP™ IGBT6/
CoolSiC™ MOSFET
Topology Package Voltage class Technology
Microcontroller All All XMC1000
Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211
Microcontroller All All XMC4000
www.infineon.com/solar
www.infineon.com/igbtmodules1200v
For Infineon’s extensive module portfolio for string and central inverters, visit:
Inverter
PV
PV
EiceDRIVER™
...
EiceDRIVER™
...
Sensors
MPPT
calculation
PWM
generation ADC
XMC4000MPPT
PWM
Boost
CoolMOS™
TRENCHSTOP™ 5/TRENCHSTOP™ IGBT6
TRENCHSTOP™ 5/TRENCHSTOP™ IGBT6
< 600 VDC
(typ.)
Grid
Microcontroller
power supply
CoolSiC™
Schottky
diode/
Rapid diode
Single-phase string inverter
(non-isolated) – standard solution
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
61
Wireless charging
Components for inductive designs for consumer and industrial applications
Especially for the emerging higher power (15 W+) transmitter applications equipping your half- or full-bridge topologies with
components
from the OptiMOS™ product family, driver ICs, and voltage regulators pays o with superior power transfer
performance. Single and dual N-channel OptiMOS™ versions with excellent RDS(on) and charge characteristics are available in
small footprint packages for your wireless power transmitter design. For multicoil designs, there are very suitable
IR MOSFET™ devices in 2 x 2 mm packages ready to use. In addition, Infineon’s XMC™ 32-bit industrial microcontrollers
provide the flexibility to charge “just about anything”. Infineon’s portfolio supports individual needs by either an ARM®
Cortex®-M0 core (XMC1000 family) or a Cortex®-M4 core with a floating point unit (XMC4000 family). In addition, wireless
power controllers – XMC™-SC, including soware IP, are available for selected applications in our portfolio (for further details
check page 261). Ensuring that you, your data, and your devices remain secured and safe during charging, Infineon adds
a new member to its OPTIGA™ Trust family – the OPTIGA™ Trust UWP. Infineon readily supports the WPC Qi authentication
standard with an integrated turnkey solution.
Find here additional MOSFET and driver IC oerings!
www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver
www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder
Inductive (Qi) and low frequency transmitter solutions
www.infineon.com/wirelesscharging
* Coming soon
1) www.infineon.com/smallsignalmosfets
Products Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
Recommendation
MOSFETs 20 V PQFN 2 x 2 IRLHS6242 11.7 (= 2.5 V drive capable) Right fit
25 V IRFHS8242 21 Right fit
30 V Super SO8 BSC0996NS 11.8 Right fit
BSC0993ND 7 Best performance
PQFN 3.3 x 3.3 BSZ0589NS 4.4 Best performance
BSZ0994NS 8.6 Right fit
BSZ0909NS 15 Right fit
PQFN 3.3 x 3.3 dual BSZ0909ND 25 Best performance
BSZ0910ND 13 Best performance
PQFN 2 x 2 IRFHS8342 25 Right fit
IRLHS6342 15.5 (= 2.5 V drive capable) Best performance
40 V PQFN 3.3 x 3.3 BSZ097N04LS 14.2 Right fit
Driver ICs PX3519, IRS2301S, WCDSC006*
Microcontroller or wireless power controller XMC™ MCU and wireless power controller XMC™-SC* (including soware IP)
Voltage regulators IR3841M, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV
Small signal MOSFETs Please check online
1)
Authentication SLS32AIA020Ux – OPTIGA™ Trust UWP (USON10 3 x 3 package)
System diagram: inductive wireless charging
AdapterWireless charging transmitter
Receiver (Rx)
Transmitter (Tx) Selection coil 1
5-20 V
Wireless charging
receiver
Selection coil 2
Half-bridge or
full-bridge
inverter
Pre-regulators
(if needed)
AC-DC converter
Mains
85...264 V~
MCU or wireless
power controller
Driver
Selection coil N
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
60
61
Wireless charging solutions
Cost-eective and secure oerings for consumer, industrial and
automotive applications
Over the last years, wireless charging has gained more and more traction in the market and is expected to heavily
influence our daily lives in future. Infineon oers a broad portfolio of eicient, high-quality products and solutions to
serve the key requirements of the dominant market standards: inductive (Qi (WPC)) and resonant (AirFuel). Whether
you charge a smartphone (e.g. at home or in the car), a handful of wearables, a power tool, a laptop or a service robot,
Infineon’s components and solutions help you overcome a wide range of common wireless power transfer challenges
for consumer, industrial and automotive wireless charging designs.
Wireless charging standards
www.infineon.com/wirelesscharging
Wireless charging
Many end markets for wireless battery charging
Infineon’s key enabling products for consumer, industrial and automotive solutions
› Low and medium voltage power MOSFETs – OptiMOS™ and StrongIRFET™
› Gate driver ICs – EiceDRIVER™ or DC-DC low voltage gate driver
› 32-bit microcontrollers – XMC™ and AURIX™
› Wireless power controller (including soware IP) – XMC™-SC and AURIX™
› P-channel and N-channel small signal power MOSFETs
› High voltage power MOSFETs – CoolMOS™ superjunction MOSFETs
› PWM/flyback controllers and integrated power stage ICs – CoolSET™
› Gallium nitride (GaN) – CoolGaN™ e-mode HEMTs
› Dedicated automotive power products – MOSFETs, DC-DC, LDO, PMIC with ASIL qualification
› Voltage and buck regulators for component and bridge supply
› Authentication – OPTIGA™ Trust UWP
Inductive multi-coil
Number of devices charged Charges only one device Charges one device but with
better user experience Charges multiple devices
Positioning of receiver application
Exact positioning Positioning more flexible
(X and Y direction)
Free positioning
(up to >30 mm vertical freedom)
Rx-Tx communication In-band communication Bluetooth low energy or
in-band communication
Magnetic resonance
Inductive single-coil
Standard Qi inductive
110-205 kHz
Resonant AirFuel
6.78 MHz
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
61
Wireless charging
Components for inductive designs for consumer and industrial applications
Especially for the emerging higher power (15 W+) transmitter applications equipping your half- or full-bridge topologies with
components
from the OptiMOS™ product family, driver ICs, and voltage regulators pays o with superior power transfer
performance. Single and dual N-channel OptiMOS™ versions with excellent RDS(on) and charge characteristics are available in
small footprint packages for your wireless power transmitter design. For multicoil designs, there are very suitable
IR MOSFET™ devices in 2 x 2 mm packages ready to use. In addition, Infineon’s XMC™ 32-bit industrial microcontrollers
provide the flexibility to charge “just about anything”. Infineon’s portfolio supports individual needs by either an ARM®
Cortex®-M0 core (XMC1000 family) or a Cortex®-M4 core with a floating point unit (XMC4000 family). In addition, wireless
power controllers – XMC™-SC, including soware IP, are available for selected applications in our portfolio (for further details
check page 261). Ensuring that you, your data, and your devices remain secured and safe during charging, Infineon adds
a new member to its OPTIGA™ Trust family – the OPTIGA™ Trust UWP. Infineon readily supports the WPC Qi authentication
standard with an integrated turnkey solution.
Find here additional MOSFET and driver IC oerings!
www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver
www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder
Inductive (Qi) and low frequency transmitter solutions
www.infineon.com/wirelesscharging
* Coming soon
1) www.infineon.com/smallsignalmosfets
Products Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
Recommendation
MOSFETs 20 V PQFN 2 x 2 IRLHS6242 11.7 (= 2.5 V drive capable) Right fit
25 V IRFHS8242 21 Right fit
30 V Super SO8 BSC0996NS 11.8 Right fit
BSC0993ND 7 Best performance
PQFN 3.3 x 3.3 BSZ0589NS 4.4 Best performance
BSZ0994NS 8.6 Right fit
BSZ0909NS 15 Right fit
PQFN 3.3 x 3.3 dual BSZ0909ND 25 Best performance
BSZ0910ND 13 Best performance
PQFN 2 x 2 IRFHS8342 25 Right fit
IRLHS6342 15.5 (= 2.5 V drive capable) Best performance
40 V PQFN 3.3 x 3.3 BSZ097N04LS 14.2 Right fit
Driver ICs PX3519, IRS2301S, WCDSC006*
Microcontroller or wireless power controller XMC™ MCU and wireless power controller XMC™-SC* (including soware IP)
Voltage regulators IR3841M, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV
Small signal MOSFETs Please check online
1)
Authentication SLS32AIA020Ux – OPTIGA™ Trust UWP (USON10 3 x 3 package)
System diagram: inductive wireless charging
AdapterWireless charging transmitter
Receiver (Rx)
Transmitter (Tx) Selection coil 1
5-20 V
Wireless charging
receiver
Selection coil 2
Half-bridge or
full-bridge
inverter
Pre-regulators
(if needed)
AC-DC converter
Mains
85...264 V~
MCU or wireless
power controller
Driver
Selection coil N
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
63
Wireless in-car charging (automotive)
The next generation of in-cabin wireless charging systems have to meet strict automotive safety, security, environmental
and regulatory requirements while still enabling industry-leading charging performance and eiciency. Infineon’s AURIX™
microcontroller, voltage regulators, power MOSFET technologies and network ICs will easily support these requirements
with a complete charging solution. With 15 W charging that meets existing standards, including fast charge smartphones,
the solution easily supports future changes with a soware update. Infineon’s new innovative foreign object detection
(FOD) system or our unique improved power drive architecture that provides unparalleled EMI performance are just two
benefits out of many to address the design challenges in the automotive wireless charging market. Discover our complete
oerings for in-cabin charging on a system level on Infineon’s wireless charging webpage
– something you will not find
just anywhere.
www.infineon.com/wirelesscharging
Wireless charging
System diagram: AURIX™-based wireless charger – three-coil
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
QG typical
[nC]
Inverter automotive grade MOSFETs 40 V SuperSO8 5 x 6 Dual IPG20N04S4-12A 15.5 9
S3O8 3.3 x 3.3 IPZ40N04S5L-4R8 6.7 11
IPZ40N04S5L-7R4 10.7 6.5
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
RDS(on) max @ VGS = 10 V
[mQ]
Coil selection switch 60 V TDSON-8 IPG20N06S4L-11A 15.8 11.2
100 V SuperSO8 5 x 6 Dual IPG20N10S4L-22A 28 22
IPG20N10S4L-35A 45 35
IPG16N10S4L-61A 78 61
Microcontroller and wireless power controller AURIX™ SAK-TC212S-4F100N, SAK-TC212S-8F133SC
Power supply TLD5190 – buck-boost controller/TLE8366, TLS4120x, TLS203x/TLF35584 – safety MCU supply + CAN supply
CAN TLE7250SJ – high performance CAN transceiver
Drivers AUIRS2301S
TLD5190QV
(Buck/Boost)
TLE8366
Pre-regulator
TLS203B0
(LDO)
TLE7250VSJ
(CAN)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
IPG16N10S4L-61A
(2x Dual FET)
VBA
T
5-40V
5 V gate DRV
3.3 V
NFC radio
CAN interface
Coil 1 Coil 2 Coil 3
IPG20N10S4L-22 (100 V)
(coil switches)
AURIX ™
SAK-TC212S-8F133SC
Wireless
power
controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
62
63
Wireless charging
Components for resonant (AirFuel) and high frequency solutions
www.infineon.com/wirelesscharging
Components for resonant designs for consumer and industrial
Infineon oers superior power MOSFET technology especially in the 30-100 V classes for class D inverter designs and
in the 150-250 V voltage classes for class E inverters to address MHz switching implementations. We provide industry
leading products when it comes to fast switching and have the best figure of merit for gate charge times RDS(on) and for
Coss thus enabling our customer to achieve 6.78 MHz inverter designs using robust silicon MOSFET technology.
CoolGaN™ 600 V with low and highly linear COSS, as well as low QC, enables high eiciency at higher power levels,
especially in higher power class E designs. The CoolGaN™ portfolio qualifying for the use in wireless charging
applications will be extended by adding 100 V and 200 V products over the next years. Infineon oers the “coolest”
driver ICs in the industry, already available as low-side drivers for class E implementations and very soon as level
shied half-bridge driver for class D topologies. If your transmitter design uses a pre-regulator (buck or buck/boost)
to control the input voltage of your amplifier you can find OptiMOS™ solutions in the 20-300V MOSFETs section. Here
again, the XMC™ industrial mircocontroller and the XMC™-SC wireless power controller, including soware IP, are a
great fit to charge “just about anything”.
Products Voltage class Package Part number RDS(on) max @ VGS = 4.5
[mQ]
QG typical
[nC]
Coss typical
[pF]
Topology
MOSFETs 30 V PQFN 2 x 2 dual IRLHS6376PBF 48 2.8 32 Class D
PQFN 3.3 x 3.3
dual
BSZ0909ND 25 1.8 120 Class D
BSZ0910ND 13 5.6 230 Class D
SOT-23 IRLML0030PBF 33 2.75 84 Class D
40 V SOT-23 IRLML0040 62 2.8 49 Class D
60 V SOT-23 IRLML0060 98 2.6 37 Class D
80 V PQFN 2 x 2 IRL80HS120 32 3.5 68 Class D/E
100 V PQFN 2 x 2 IRL100HS121 42 2.7 62 Class D/E
150 V PQFN 3.3 x 3.3 BSZ900N15NS3 75** 4.1** 46 Class E
BSZ520N15NS3 42** 7.2** 80 Class E
200 V BSZ900N20NS3 78** 7.2** 52 Class E
BSZ22DN20NS3 200** 3.5** 24 Class E
BSZ12DN20NS3 111** 5.4** 39 Class E
250 V BSZ42DN25NS3 375** 3.6** 21 Class E
Driver ICs EiceDRIVER™ 2EDL71*, 1EDN7512, 2EDN7524
GaN EiceDRIVER™ ICs 1EDS5663H, 1EDF5673F, 1EDF5673K
GaN e-mode HEMT CoolGaN™ 600 V e-mode GaN HEMT IGT60R190D1S (HSOF-8-3)
Microcontroller or wireless power controller XMC™ MCU and wireless power controller XMC™-SC* (including soware IP)
Voltage regulators IR3841M, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV
Small signal MOSFETs Please check online
1)
Find here additional MOSFET and driver IC oerings!
www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver
www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder
* Coming soon
** VGS = 8 V
1) www.infineon.com/smallsignalmosfets
Make use of our evaluation boards
for low cost charger and adapter
applications (see pages 34 and 36).
System diagram: resonant wireless charging – class D, full-bridge
EiceDRIVER™
2EDL
gate driver
EiceDRIVER™
2EDL
gate driver
Pre-regulators
Receiver
AC-DC converter
MCU or wireless
power controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
63
Wireless in-car charging (automotive)
The next generation of in-cabin wireless charging systems have to meet strict automotive safety, security, environmental
and regulatory requirements while still enabling industry-leading charging performance and eiciency. Infineon’s AURIX™
microcontroller, voltage regulators, power MOSFET technologies and network ICs will easily support these requirements
with a complete charging solution. With 15 W charging that meets existing standards, including fast charge smartphones,
the solution easily supports future changes with a soware update. Infineon’s new innovative foreign object detection
(FOD) system or our unique improved power drive architecture that provides unparalleled EMI performance are just two
benefits out of many to address the design challenges in the automotive wireless charging market. Discover our complete
oerings for in-cabin charging on a system level on Infineon’s wireless charging webpage
– something you will not find
just anywhere.
www.infineon.com/wirelesscharging
Wireless charging
System diagram: AURIX™-based wireless charger – three-coil
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
QG typical
[nC]
Inverter automotive grade MOSFETs 40 V SuperSO8 5 x 6 Dual IPG20N04S4-12A 15.5 9
S3O8 3.3 x 3.3 IPZ40N04S5L-4R8 6.7 11
IPZ40N04S5L-7R4 10.7 6.5
Automotive products for wireless charging Voltage class Package Part number RDS(on) max @ VGS = 4.5 V
[mQ]
RDS(on) max @ VGS = 10 V
[mQ]
Coil selection switch 60 V TDSON-8 IPG20N06S4L-11A 15.8 11.2
100 V SuperSO8 5 x 6 Dual IPG20N10S4L-22A 28 22
IPG20N10S4L-35A 45 35
IPG16N10S4L-61A 78 61
Microcontroller and wireless power controller AURIX™ SAK-TC212S-4F100N, SAK-TC212S-8F133SC
Power supply TLD5190 – buck-boost controller/TLE8366, TLS4120x, TLS203x/TLF35584 – safety MCU supply + CAN supply
CAN TLE7250SJ – high performance CAN transceiver
Drivers AUIRS2301S
TLD5190QV
(Buck/Boost)
TLE8366
Pre-regulator
TLS203B0
(LDO)
TLE7250VSJ
(CAN)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
AUIRS2301S
(Driver)
IPG20N04S4L-11A
(Dual FET)
IPG16N10S4L-61A
(2x Dual FET)
VBA
T
5-40V
5 V gate DRV
3.3 V
NFC radio
CAN interface
Coil 1 Coil 2 Coil 3
IPG20N10S4L-22 (100 V)
(coil switches)
AURIX ™
SAK-TC212S-8F133SC
Wireless
power
controller
Videos
www.infineon.com/mediacenter
Infineon support for applications
Useful links and helpful information
Learn more about our system solutions for your application.
Find block diagrams, evaluation boards, interactive 3D models, videos, tools and related material for download.
www.infineon.com/audio
www.infineon.com/automation
www.infineon.com/consumer
www.infineon.com/dataprocessing
www.infineon.com/emobility
www.infineon.com/ev-charging
www.infineon.com/homeappliance
www.infineon.com/industrial-robotics
www.infineon.com/lev
www.infineon.com/lighting
www.infineon.com/microwave
www.infineon.com/motorcontrol
www.infineon.com/multicopter
www.infineon.com/optiga
www.infineon.com/service-robotics
www.infineon.com/smps
www.infineon.com/solar
www.infineon.com/ups
www.infineon.com/welding
www.infineon.com/wirelesspower
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
Application support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
64
Wireless charging
www.infineon.com/wirelesscharging
System solutions for wireless charging
Master your design challenges with Infineon. With our broad range of designs, customers have the possibility to make
wireless charging available for dierent kinds of applications. For more information on the availability of our boards
please visit www.infineon.com/wirelesscharging or get in contact with us via www.infineon.com/support.
Find the right solutions for your wireless charging designs in four steps
Infineon’s selection tool for wireless charging allows you to find the right solutions for your designs
in just four steps: select the application, power range, standard and the topology you want to apply
and get an overview of Infineon’s most recommended oerings.
Try now!
15 W inductive
Consumer/industrialAutomotive
1-15 W inductive 2.5 W resonant60-200 W inductive 16/20 W resonant >20 W resonant
Resonant solutionsInductive solutions
Dedicated
for automotive
in-cabin wireless
charging
Videos
www.infineon.com/mediacenter
Infineon support for applications
Useful links and helpful information
Learn more about our system solutions for your application.
Find block diagrams, evaluation boards, interactive 3D models, videos, tools and related material for download.
www.infineon.com/audio
www.infineon.com/automation
www.infineon.com/consumer
www.infineon.com/dataprocessing
www.infineon.com/emobility
www.infineon.com/ev-charging
www.infineon.com/homeappliance
www.infineon.com/industrial-robotics
www.infineon.com/lev
www.infineon.com/lighting
www.infineon.com/microwave
www.infineon.com/motorcontrol
www.infineon.com/multicopter
www.infineon.com/optiga
www.infineon.com/service-robotics
www.infineon.com/smps
www.infineon.com/solar
www.infineon.com/ups
www.infineon.com/welding
www.infineon.com/wirelesspower
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs ApplicationsXENSIV™ sensors
Application support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
67
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™
Technology development and product family positioning
Infineon's power MOSFET 20-300 V product portfolio is divided into „active and preferred“, referring to the latest
technology available oering best-in-class performance, as well as „active“, which consists of well-established
technologies which complete this broad portfolio.
OptiMOS™ 6 power MOSFETs 40 V are the newest addition to the OptiMOS™ product family available either in SuperSO8
or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high eiciency
over a wide range of output power are required. For the other voltage classes, from 25 V up to 150 V, OptiMOS™ 5
represents the latest generation in the market, oering either best in class (BiC) or price/performance solutions. For high
frequency applications, the product portfolio is complemented by OptiMOS™ 3 power MOSFETs 40-50 V as standard
components. The „active and preferred“ OptiMOS™ 3 power MOSFETs 75-120 V, as well as 200-300 V is the best fit
portfolio either in low or high frequency applications with a range of products covering from BiC to standard parts.
StrongIRFET™ Gen. 1 is recommended for 20-300 V applications when BiC performance is not essential and cost is a
more significant consideration.
The diagrams below summarize the recommended technology for best fit standard components, price/performance
and dierentiated products according to switching frequency.
IR MOSFET™
40-300 V
StrongIRFET™ Gen. 1
20-300 V
OptiMOS™ 3
80/100/150 V
OptiMOS™ 3
40-60 V
OptiMOS™
25/30 V
OptiMOS™ 5
80/100/150 V
OptiMOS™ 3
200/250/300 V
OptiMOS™ 3
75/120 V
OptiMOS™ 5
25/30/40/60 V
OptiMOS™ 6
40 V
Active Active and preferred Active Active and preferred
StrongIRFET™ OptiMOS™
Best-in-class OptiMOS™ 5
20-150 V
StrongIRFET™
20-75 V
20 V 80 V 300 V
Breakdown voltage
Dierenti
ated
products
Low frequency application <100 kHz High frequency application >100 kHz
Price
performance
Best-fit
standard
components
StrongIRFET™
80-300 V
OptiMOS™ 5
80-150 V
OptiMOS™ 3
80-150 V
OptiMOS™ 3
200-300 V
Best-in-class OptiMOS™ 5
20-150 V
OptiMOS™ 5
20-150 V
OptiMOS™ 3
20-150 V
20 V 80 V 300 V
Breakdown voltage
OptiMOS™ 3
200-300 V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
66
67
OptiMOS™ and StrongIRFET™
20-300 V MOSFETs N-channel power MOSFETs
Infineon’s semiconductors are designed to bring greater eiciency, power density and cost-eectiveness. The full range
of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch
mode power supplies (SMPS), battery powered applications, motor control and drives, inverters, and computing.
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and
performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and
figure of merit (FOM).
OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultralow RDS(on), as well as low charge
for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are
ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.
OptiMOS™ and StrongIRFET™
www.infineon.com/powermosfet-12V-300V
StrongIRFET™
Robust and excellent price/performance ratio
Designed for industrial applications
Optimized for low switching frequency
High current carrying capability
Rugged silicon
OptiMOS™
Best-in-class technology
Designed for high performance applications
Optimized for high switching frequency
Industry’s best figure of merit
High eiciency and power density
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
67
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™
Technology development and product family positioning
Infineon's power MOSFET 20-300 V product portfolio is divided into „active and preferred“, referring to the latest
technology available oering best-in-class performance, as well as „active“, which consists of well-established
technologies which complete this broad portfolio.
OptiMOS™ 6 power MOSFETs 40 V are the newest addition to the OptiMOS™ product family available either in SuperSO8
or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high eiciency
over a wide range of output power are required. For the other voltage classes, from 25 V up to 150 V, OptiMOS™ 5
represents the latest generation in the market, oering either best in class (BiC) or price/performance solutions. For high
frequency applications, the product portfolio is complemented by OptiMOS™ 3 power MOSFETs 40-50 V as standard
components. The „active and preferred“ OptiMOS™ 3 power MOSFETs 75-120 V, as well as 200-300 V is the best fit
portfolio either in low or high frequency applications with a range of products covering from BiC to standard parts.
StrongIRFET™ Gen. 1 is recommended for 20-300 V applications when BiC performance is not essential and cost is a
more significant consideration.
The diagrams below summarize the recommended technology for best fit standard components, price/performance
and dierentiated products according to switching frequency.
IR MOSFET™
40-300 V
StrongIRFET™ Gen. 1
20-300 V
OptiMOS™ 3
80/100/150 V
OptiMOS™ 3
40-60 V
OptiMOS™
25/30 V
OptiMOS™ 5
80/100/150 V
OptiMOS™ 3
200/250/300 V
OptiMOS™ 3
75/120 V
OptiMOS™ 5
25/30/40/60 V
OptiMOS™ 6
40 V
Active Active and preferred Active Active and preferred
StrongIRFET™ OptiMOS™
Best-in-class OptiMOS™ 5
20-150 V
StrongIRFET™
20-75 V
20 V 80 V 300 V
Breakdown voltage
Dierenti
ated
products
Low frequency application <100 kHz High frequency application >100 kHz
Price
performance
Best-fit
standard
components
StrongIRFET™
80-300 V
OptiMOS™ 5
80-150 V
OptiMOS™ 3
80-150 V
OptiMOS™ 3
200-300 V
Best-in-class OptiMOS™ 5
20-150 V
OptiMOS™ 5
20-150 V
OptiMOS™ 3
20-150 V
20 V 80 V 300 V
Breakdown voltage
OptiMOS™ 3
200-300 V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
69
www.infineon.com/powermosfet-12V-300V
Space saving and high performance packages
TO-247 TO-220 D
2
PAK D
2
PAK 7-pin TO-leadless
Optimized for high power applications and high current capability
Height [mm]
5.0 4.4 4.4 4.4 2.3
Outline [mm]
40.15 x 15.9 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9
Current capability [A]
195.0 195.0 195.0 240.0 300.0
Thermal resistance RthJC [K/W]
2.0 0.5 0.5 0.5 0.4
SuperSO8 Power Block PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFET™
For highest eiciency
and power management
Significant design shrink For highest eiciency
and power management
Enables significant
space saving
Best thermal behavior in
a tiny footprint
Height [mm]
1.0 1.0 1.0 0.9 Small: 0.65
Medium: 0.65
Large: 0.71
Outline [mm]
5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8
Medium: 6.3 x 4.9
Large: 9.1 x 6.98
Current capability [A]
100.0 50.0 40.0 18.5 Small: 75.0
Medium: 180.0
Large: 375.0
Thermal resistance RthJC [K/W]
0.8 1.5 3.2 11.1 0.5
OptiMOS™ and StrongIRFET™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
68
69
Guidance for applications and voltage classes
OptiMOS™ and StrongIRFET™ portfolio, covering 20 up to 300 V MOSFETs, can address a broad range of needs from
low to high switching frequencies. The tables below provide a guidance overview for the recommended OptiMOS™ or
StrongIRFET™ products for each major sub-application and voltage class.
StrongIRFET™ available
OptiMOS™ recommended
OptiMOS™ available
StrongIRFET™ recommended
www.infineon.com/powermosfet-12V-300V
Low power
Power tools,
Multicopter, Battery,
Industrial Drives
OptiMOS™ ✓
✓
✓
✓
✓
✓
✓
✓✓
✓
✓✓
✓
✓✓
✓
✓✓
OptiMOS™
StrongIRFET™
StrongIRFET™
High power
(LEV, LSEV)
Battery powered
Solar
Oline
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓✓ ✓✓ ✓✓ ✓
✓
✓
✓ ✓
✓
slow switching
fast switching
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
UPS
Inverters
Adapter /
Charger
PC Power
LCD TV
Server
AC-DC
Telecom
✓✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓ ✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
StrongIRFET™
SMPS
Recommended voltage 20 V
to 30 V 40 V 60 V 75 V
to 80 V 100 V 135 V
to 150 V 200 V 250 V 300 V
OptiMOS™ and StrongIRFET™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
69
www.infineon.com/powermosfet-12V-300V
Space saving and high performance packages
TO-247 TO-220 D
2
PAK D
2
PAK 7-pin TO-leadless
Optimized for high power applications and high current capability
Height [mm]
5.0 4.4 4.4 4.4 2.3
Outline [mm]
40.15 x 15.9 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9
Current capability [A]
195.0 195.0 195.0 240.0 300.0
Thermal resistance RthJC [K/W]
2.0 0.5 0.5 0.5 0.4
SuperSO8 Power Block PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFET™
For highest eiciency
and power management
Significant design shrink For highest eiciency
and power management
Enables significant
space saving
Best thermal behavior in
a tiny footprint
Height [mm]
1.0 1.0 1.0 0.9 Small: 0.65
Medium: 0.65
Large: 0.71
Outline [mm]
5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8
Medium: 6.3 x 4.9
Large: 9.1 x 6.98
Current capability [A]
100.0 50.0 40.0 18.5 Small: 75.0
Medium: 180.0
Large: 375.0
Thermal resistance RthJC [K/W]
0.8 1.5 3.2 11.1 0.5
OptiMOS™ and StrongIRFET™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
71
OptiMOS™ Linear FET
www.infineon.com/optimos-linearfet
OptiMOS™ Linear FET
Combining low on-state resistance (RDS(on))
with wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-o between on-state resistance (RDS(on)) and linear
mode capability operation in the saturation region of an enhanced mode MOSFET. It oers the state-of-the-art RDS(on) of
a trench MOSFET, as well as the wide safe operating area of a classic planar MOSFET.
This new product is the perfect fit for hot swap and e-fuse applications commonly found in telecom and battery
management systems. OptiMOS™ Linear FET prevents damage at the load in case of a short circuit by limiting high
inrush currents.
OptiMOS™ Linear FET is currently available in three voltage classes – 100 V, 150 V, and 200 V – in either D2PAK or
D2PAK 7-pin package.
SOA comparison
Whilst the OptiMOS™ 5 100 V, 1.7 mΩ power MOSFET has a SOA of
0.5 A, the OptiMOS™ Linear FET version at the same RDS(on) oers a
much wider SOA of 11.5 A (@ 54 V, 10 ms).
103
102
101
100
10-1
103
102
101
100
10-1
10-1 100 101 102 10310-1 100 101 102 10
3
VDS [V]
I
D
[A]
VDS [V]
ID [A]
1 µs 1 µs
10 µs 10 µs
100 µs 100 µs
1 ms
1 ms
10 ms
10 ms
DC
DC
OptiMOS™ 5
RDS(on) = 1.7 mΩ
OptiMOS™ Linear FET
RDS(on) = 1.7 mΩ
0.5 A @ 54 V
tpulse= 10 ms
11.5 A @ 54 V
tpulse= 10 ms
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
70
71
www.infineon.com/powermosfet-12V-300V
Discrete and integrated packages
Small signal and small power MOSFETs
OptiMOS™ and StrongIRFET™ technologies are available in dierent packages to address the demands for higher
current carrying capability and significant space saving.
The broad portfolio enables footprint reduction, boosted current rating, and optimized thermal performance. While
the surface mount leadless devices enable footprint reduction, through-hole packages are characterized by a high
power rating.
Furthermore, Infineon oers innovative packages such as DirectFET™ and TO-leadless. DirectFET™ is designed for
high frequency applications by oering lowest parasitic resistance. This package is available in three dierent sizes:
small, medium and large. TO-leadless is optimized to handle currents of up to 300 A, increasing power density with a
substantial reduction in footprint.
Small signal and small power
MOSFETs are available in eight
industry-standard package types
ranging from the largest SOT-223 to
the smallest SOT-363.
Products are oered in single, dual
and complementary configurations
and are suitable for a wide range
of applications, including battery
protection, LED lighting, low voltage
drives and DC-DC converters.
400
300
250
200
150
100
50
I
max
[A]
Outline [mm
2
]
DirectFET™ L
DirectFET™ M
DirectFET™ S
PQFN 3.3 x 3.3
Power Block 5 x 6
Super SO8 DPAK IPAK TO-220 (FullPAK)
TO-220
I2PAK
D2PAK
D2PAK 7-pin
D2PAK 7-pin+
TOLL
TO-247
SMD (leadless + dual side cooling)
Legend
SMD (leadless)
SMD (with leads)
THD
PQFN 2 x 2
SO-8
20 40 60 80 100 150 300 400 500
10
5
2.5
10
I
max
[A]
Outline [mm
2
]
TSOP-6
SC-59
SOT-89 SOT-223
SOT-23
SOT-323
SOT-363
20 30 40 50
OptiMOS™ and StrongIRFET™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
71
OptiMOS™ Linear FET
www.infineon.com/optimos-linearfet
OptiMOS™ Linear FET
Combining low on-state resistance (RDS(on))
with wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-o between on-state resistance (RDS(on)) and linear
mode capability operation in the saturation region of an enhanced mode MOSFET. It oers the state-of-the-art RDS(on) of
a trench MOSFET, as well as the wide safe operating area of a classic planar MOSFET.
This new product is the perfect fit for hot swap and e-fuse applications commonly found in telecom and battery
management systems. OptiMOS™ Linear FET prevents damage at the load in case of a short circuit by limiting high
inrush currents.
OptiMOS™ Linear FET is currently available in three voltage classes – 100 V, 150 V, and 200 V – in either D2PAK or
D2PAK 7-pin package.
SOA comparison
Whilst the OptiMOS™ 5 100 V, 1.7 mΩ power MOSFET has a SOA of
0.5 A, the OptiMOS™ Linear FET version at the same RDS(on) oers a
much wider SOA of 11.5 A (@ 54 V, 10 ms).
103
102
101
100
10-1
103
102
101
100
10-1
10-1 100 101 102 10310-1 100 101 102 10
3
VDS [V]
I
D
[A]
VDS [V]
ID [A]
1 µs 1 µs
10 µs 10 µs
100 µs 100 µs
1 ms
1 ms
10 ms
10 ms
DC
DC
OptiMOS™ 5
RDS(on) = 1.7 mΩ OptiMOS™ Linear FET
RDS(on) = 1.7 mΩ
0.5 A @ 54 V
tpulse= 10 ms
11.5 A @ 54 V
tpulse= 10 ms
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
73
OptiMOS™ 6
Lowest RDS(on)and Qg enabling high eiciency over a wide load range
in SMPS applications
In SMPS applications, OptiMOS™ 6 is the perfect solution for high eiciency over a wide range of output power,
avoiding the trade-o between low and high load conditions.
At the low output power range, where switching losses due to parasitic capacitance in the MOSFET are dominating,
OptiMOS™ 6 power MOSFET BSC010N04LS6 achieves the same eiciency as the OptiMOS™ 5 power MOSFET
BSC014N04LS at 40% lower RDS(on).
Moreover, compared to the OptiMOS™ 5 40 V 1.0 mΩ power MOSFET, the OptiMOS™ 6 generation achieves lower
switching losses at high load with the same RDS(on). This combination leads to an overall eiciency optimization in low
and high load operating points.
0
OptiMOS™ 6 power MOSFET BSC010N04LS6
OptiMOS™ 5 power MOSFET BSC010N04LS
OptiMOS™ 5 power MOSFET BSC014N04LS
99.8
99.7
99.6
99.5
99.4
99.3
99.2
99.1
99.0
100 200 300 400 500 600 700 800 900 1000 1100 1200
Output power [W]
Eiciency [%]
www.infineon.com/optimos6
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
72
73
OptiMOS™ 6
www.infineon.com/optimos6
OptiMOS™ 6 power MOSFETs 40 V
Next generation of cutting edge MOSFETs
OptiMOS™ 6 40 V devices are setting a new technology standard in the field of discrete MOSFET devices.
Compared to alternative products, Infineon's leading thin wafer technology enables significant performance
benefits compared to OptiMOS™ 5:
› RDS(on) reduced by 30%
› Improved FOM Qg x RDS(on) by 29%
› Improved FOM Qgd x RDS(on) by 46%
Infineon’s OptiMOS™ 6 power MOSFET 40 V family oers an optimized solution for synchronous rectification
in switched mode power supplies (SMPS) in servers, desktop PCs, wireless and quick chargers. The improved
performance in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) yields an eiciency
improvement, allowing easier thermal design and less paralleling, leading to system cost reduction. In addition,
the best-in-class RDS(on) makes these devices suitable for ORing circuits.
Infineon’s market-leading OptiMOS™ 6 power MOSFETs 40 V are available
in two dierent packages:
› SuperSO8 – 5 x 6 mm with RDS(on) ranging from 5.9 mΩ down to 0.7 mΩ
› PQFN 3x3 – 3.3 x 3.3 mm with RDS(on) ranging from 6.3 mΩ down to 1.8 mΩ
Gate drive
Controller
Gate drive
fsw
UT
UGS UGS
SMPS application: syncronous rectification
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
73
OptiMOS™ 6
Lowest RDS(on)and Qg enabling high eiciency over a wide load range
in SMPS applications
In SMPS applications, OptiMOS™ 6 is the perfect solution for high eiciency over a wide range of output power,
avoiding the trade-o between low and high load conditions.
At the low output power range, where switching losses due to parasitic capacitance in the MOSFET are dominating,
OptiMOS™ 6 power MOSFET BSC010N04LS6 achieves the same eiciency as the OptiMOS™ 5 power MOSFET
BSC014N04LS at 40% lower RDS(on).
Moreover, compared to the OptiMOS™ 5 40 V 1.0 mΩ power MOSFET, the OptiMOS™ 6 generation achieves lower
switching losses at high load with the same RDS(on). This combination leads to an overall eiciency optimization in low
and high load operating points.
0
OptiMOS™ 6 power MOSFET BSC010N04LS6
OptiMOS™ 5 power MOSFET BSC010N04LS
OptiMOS™ 5 power MOSFET BSC014N04LS
99.8
99.7
99.6
99.5
99.4
99.3
99.2
99.1
99.0
100 200 300 400 500 600 700 800 900 1000 1100 1200
Output power [W]
Eiciency [%]
www.infineon.com/optimos6
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
75
OptiMOS™ and StrongIRFET™ 25 V/30 V in Power Stage 3x3 and 5x6
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSZ0910ND TISON 3 x 3 – 30 13 13 4.0 4.0
BSZ0909ND TISON 3 x 3 – 30 25 25 1.8 1.8
BSC0910NDI TISON 5 x 6 ü25 5.9 1.6 7.7 25.0
BSC0911ND TISON 5 x 6 – 25 4.8 1.7 7.7 25.0
BSC0921NDI TISON 5 x 6 ü30 7.0 2.1 5.8 21.0
BSC0923NDI TISON 5 x 6 ü30 7.0 3.7 5.2 12.2
BSC0924NDI TISON 5 x 6 ü30 7.0 5.2 5.2 8.6
BSC0925ND TISON 5 x 6 – 30 6.4 6.4 5.2 6.7
OptiMOS™ and StrongIRFET™ 25 V/30 V in Power Block 5x6 and 5x4
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSG0810NDI TISON 5 x 6 ü25 4.0 1.2 5.6 16.0
BSG0811ND TISON 5 x 6 – 25 4.0 1.1 5.6 20.0
BSG0813NDI TISON 5 x 6 ü25 4.0 1.7 5.6 12.0
IRFH4257DTRPBF PQFN 5 x 4 ü25 4.7 1.8 9.7 23.0
www.infineon.com/powermosfet-12V-300V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
74
75
Product portfolio
* Optimized for resonant applications (e.g. LLC converter)
** Monolithically integrated Schottky-like diode
*** RDS(on) max @ VGS=4.5 V
1) 2.5 VGS capable
2) Coming soon
OptiMOS™ and StrongIRFET™ 20V (super) logic level
RDS(on) max
@ VGS=10V
[mΩ]
TO-252
(DPAK)
DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8 SOT-23
< 1 IRL6283MTRPBF
RDS(on)=0.65 mΩ
IRFH6200TRPBF
RDS(on)=0.99 mΩ
2-4
BSC026N02KS G
RDS(on)=2.6 mΩ
IRF6201TRPBF
RDS(on)=2.45 mΩ
IRLR6225TRPBF
RDS(on)=4.0 mΩ
IRL6297SDTRPBF**
RDS(on)=3.8 mΩ; dual
IRLH6224TRPBF
RDS(on)=3.0 mΩ
4-10 BSC046N02KS G
RDS(on)=4.6 mΩ
IRF3717
RDS(on)=4.4 mΩ
> 10
IRLHS6242TRPBF
RDS(on)=11.7 mΩ
IRLML6244 1) ***
RDS(on)=21 mΩ
IRLHS6276TRPBF**
RDS(on)=45.0 mΩ; dual
IRLML6246 1) ***
RDS(on)=46 mΩ
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™ 25 V logic level
RDS(on) max
@ VGS=10V
[mΩ]
DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8 SOT-23
< 1
IRF6718L2TRPBF
RDS(on)=0.7 mΩ
BSC009NE2LS
RDS(on)=0.9 mΩ
BSB008NE2LX
RDS(on)=0.8 mΩ
BSZ009NE2LS5 2)
RDS(on)=0.9 mΩ
BSC009NE2LS5
RDS(on)=0.9 mΩ
BSC009NE2LS5I**
RDS(on)=0.95 mΩ
1-2
IRF6898MTRPBF**
RDS(on)=1.1 mΩ
BSZ010NE2LS5 2)
RDS(on)=1.0 mΩ
BSC010NE2LS
RDS(on)=1.0 mΩ
BSB012NE2LXI**
RDS(on)=1.2 mΩ
BSZ011NE2LS5 2)
RDS(on)=1.1 mΩ
BSC010NE2LSI**
RDS(on)=1.05 mΩ
IRF6717MTRPBF
RDS(on)=1.25 mΩ
BSZ013NE2LS5I**
RDS(on)=1.3 mΩ
BSC014NE2LSI**
RDS(on)=1.4 mΩ
IRF6894MTRPBF**
RDS(on)=1.3 mΩ
BSZ014NE2LS5IF * **
RDS(on)=1.45 mΩ
IRFH5250D
RDS(on)=1.4 mΩ
BSB013NE2LXI**
RDS(on)=1.3 mΩ
BSZ017NE2LS5I**
RDS(on)=1.7 mΩ
BSC015NE2LS5I**
RDS(on)=1.5 mΩ
IRF6797MTRPBF**
RDS(on)=1.4 mΩ
BSZ018NE2LS
RDS(on)=1.8 mΩ
BSC018NE2LS
RDS(on)=1.8 mΩ
IRF6716M
RDS(on)=1.6 mΩ
BSZ018NE2LSI**
RDS(on)=1.8 mΩ
BSC018NE2LSI**
RDS(on)=1.8 mΩ
IRF6715MTRPBF
RDS(on)=1.6 mΩ
IRF6893MTRPBF**
RDS(on)=1.6 mΩ
IRF6892STRPBF**
RDS(on)=1.7 mΩ
IRF6795MTRPBF**
RDS(on)=1.8 mΩ
2-4
IRF6714MTRPBF
RDS(on)=2.1 mΩ
BSZ031NE2LS5
RDS(on)=3.1 mΩ
BSC024NE2LS
RDS(on)=2.4 mΩ
BSF030NE2LQ
RDS(on)=3.0 mΩ
BSZ033NE2LS5
RDS(on)=3.3 mΩ
BSC026NE2LS5
RDS(on)=2.6 mΩ
IRF8252
RDS(on)=2.7 mΩ
BSF035NE2LQ
RDS(on)=3.5 mΩ
BSZ036NE2LS
RDS(on)=3.6 mΩ
BSC032NE2LS
RDS(on)=3.2 mΩ
IRF6811STRPBF**
RDS(on)=3.7 mΩ
BSZ037NE2LS5 2)
RDS(on)= 3.7mΩ
BSZ039NE2LS5 2)
RDS(on) = 3.9 mΩ
4-10
IRF6802SD
RDS(on)=4.2 mΩ
IRF6710S2TRPBF
RDS(on)=4.5 mΩ
IRFHM8228TRPBF
RDS(on)=5.2 mΩ
BSC050NE2LS
RDS(on)=5.0 mΩ
IRF6712STRPBF
RDS(on)=4.9 mΩ
BSZ060NE2LS
RDS(on)=6.0 mΩ
IRF6810STRPBF**
RDS(on)=5.2 mΩ
IRFHM8235TRPBF
RDS(on)=7.7 mΩ
> 10 IRFHS8242
RDS(on)=13 mΩ
IRFML8244
RDS(on)=24 mΩ
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
75
OptiMOS™ and StrongIRFET™ 25 V/30 V in Power Stage 3x3 and 5x6
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSZ0910ND TISON 3 x 3 – 30 13 13 4.0 4.0
BSZ0909ND TISON 3 x 3 – 30 25 25 1.8 1.8
BSC0910NDI TISON 5 x 6 ü25 5.9 1.6 7.7 25.0
BSC0911ND TISON 5 x 6 – 25 4.8 1.7 7.7 25.0
BSC0921NDI TISON 5 x 6 ü30 7.0 2.1 5.8 21.0
BSC0923NDI TISON 5 x 6 ü30 7.0 3.7 5.2 12.2
BSC0924NDI TISON 5 x 6 ü30 7.0 5.2 5.2 8.6
BSC0925ND TISON 5 x 6 – 30 6.4 6.4 5.2 6.7
OptiMOS™ and StrongIRFET™ 25 V/30 V in Power Block 5x6 and 5x4
Part number Package Monolithically
integrated Schottky
like diode
BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
High-side Low-side High-side Low-side
BSG0810NDI TISON 5 x 6 ü25 4.0 1.2 5.6 16.0
BSG0811ND TISON 5 x 6 – 25 4.0 1.1 5.6 20.0
BSG0813NDI TISON 5 x 6 ü25 4.0 1.7 5.6 12.0
IRFH4257DTRPBF PQFN 5 x 4 ü25 4.7 1.8 9.7 23.0
www.infineon.com/powermosfet-12V-300V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
77
Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
Dual
PQFN 2 x 2
2-4
IRF8304MTRPBF
RDS(on)=2.2 mΩ
BSZ0901NSI**
RDS(on)=2.1 mΩ
BSC020N03LS G
RDS(on)=2.0 mΩ
IPC042N03L3****
RDS(on)=3.7 mΩ
IRLHM620TRPBF
RDS(on)=2.5 mΩ
BSC0502NSI**
RDS(on)=2.4 mΩ
IRF8306MTRPBF**
RDS(on)=2.5 mΩ
BSZ0902NS
RDS(on)=2.6 mΩ
BSC025N03LS G
RDS(on)=2.5 mΩ
BSC0902NS
RDS(on)=2.6 mΩ
IRF8252TRPBF
RDS(on)=2.7 mΩ
BSZ0902NSI**
RDS(on)=2.8 mΩ
BSC0902NSI**
RDS(on)=2.8 mΩ
IRF8788TRPBF
RDS(on)=2.8 mΩ
BSZ0502NSI**
RDS(on)=2.8 mΩ
IRFH8316TRPBF
RDS(on)=2.95 mΩ
BSC030N03LS G
RDS(on)= 3.0 mΩ
BSZ0503NSI**
RDS(on)=3.4 mΩ
IRFH8318TRPBF
RDS(on)=3.1 mΩ
IRLHM630***
RDS(on)= 3.5 mΩ
BSC0503NSI**
RDS(on)=3.2 mΩ
IRF7862TRPBF
RDS(on)=3.3 mΩ
BSZ035N03LS G
RDS(on)=3.5 mΩ
BSC034N03LS G
RDS(on)=3.4 mΩ
IRF8734TRPBF
RDS(on)=3.5 mΩ
IRFHM830
RDS(on)= 3.8 mΩ
BSC0504NSI**
RDS(on)=3.7 mΩ
BSZ0904NSI**
RDS(on)=4.0 mΩ
BSC0904NSI**
RDS(on)=3.7 mΩ
4-10
IRFHM830D
RDS(on)= 4.3 mΩ
IRFH8324TRPBF
RDS(on)=4.1 mΩ
BSZ0506NS
RDS(on)=4.4 mΩ
BSC042N03LS G
RDS(on)=4.2 mΩ
IRFHM8326TRPBF
RDS(on)=4.7 mΩ
BSC0906NS
RDS(on)=4.5 mΩ
IRFH8321TRPBF
RDS(on)=4.9 mΩ
IPC028N03L3
RDS(on)=5.0 mΩ
BSZ050N03LS G
RDS(on)=5.0 mΩ
IRFH8325TRPBF
RDS(on)=5.0 mΩ
IRF8736TRPBF
RDS(on)=4.8 mΩ
BSZ058N03LS G
RDS(on)=5.8 mΩ
BSC050N03LS G
RDS(on)=5.0 mΩ
IPC022N03L3
RDS(on)=5.3 mΩ
IRFHM8329TRPBF
RDS(on)=6.1 mΩ
BSC052N03LS
RDS(on)=5.2 mΩ
BSZ065N03LS
RDS(on)=6.5 mΩ
BSC057N03LS G
RDS(on)=5.7 mΩ
IRF8327S2
RDS(on)= 7.3 mΩ
IRFHM8330TRPBF
RDS(on)=6.6 mΩ
IRFH8330TRPBF
RDS(on)=6.6 mΩ
BSZ0994NS
RDS(on)= 7.0 mΩ
BSC080N03LS G
RDS(on)=8.0 mΩ
IRFHM831
RDS(on)= 7.8 mΩ
IRFH8334TRPBF
RDS(on)=9.0 mΩ
IRF8721TRPBF
RDS(on)=8.5 mΩ
BSZ088N03LS G
RDS(on)=8.8 mΩ
BSC090N03LS G
RDS(on)=9.0 mΩ
IRF8714TRPBF
RDS(on)=8.7 mΩ
IRFHM8334TRPBF
RDS(on)=9.0 mΩ
BSC0909NS
RDS(on)=9.2 mΩ
BSZ100N03LS G
RDS(on)=10.0 mΩ
10-63
IPC014N03L3
RDS(on)=10.3 mΩ
BSZ0909NS
RDS(on)=12.0 mΩ
BSC120N03LS G
RDS(on)=12.0 mΩ
IRF8707TRPBF
RDS(on)=11.9 mΩ
IRF7907TRPBF
R
DS(on)
=11.8 mΩ+16.4 mΩ
IRLHS6342***
RDS(on)= 16 mΩ
IRFHM8337TRPBF
RDS(on)=12.4 mΩ
IRFH8337TRPBF
RDS(on)=12.8 mΩ
IRL6342 1) ***
RDS(on) = 14.6 mΩ
IRF8513TRPBF
R
DS(on)
=2.7 mΩ+15.5 mΩ
IRFHS8342
RDS(on)= 16 mΩ
BSZ130N03LS G
RDS(on)=13.0 mΩ
IRL6372 1) ***
RDS(on) = 18 mΩ; dual
IRF8313TRPBF
R
DS(on)
=15.5 mΩ+15.5 mΩ
IRLHS6376***
RDS(on)= 63 mΩ; dual
IRFHM8363TRPBF
RDS(on)=14.9 mΩ
IRF7905TRPBF
R
DS(on)
=17.1 mΩ+21.8 mΩ
2 x 7.2 BSC072N03LD G
RDS(on)=7.2 mΩ
2 x 15 BSC150N03LD G
RDS(on)=15.0 mΩ
1) 2.5 VGS capable
** Monolithically integrated Schottky-like diode
*** RDS(on) max @VGS=4.5 V
**** RDS(on) typ. @VGS= 4.5 V
www.infineon.com/powermosfet-12V-300V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@ VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-220
<1 IPB009N03L G
RDS(on)=0.95 mΩ
1-2 IRLS3813TRLPBF
RDS(on)=1.95 mΩ
IRLB3813PBF
RDS(on)=1.95 mΩ
2-4
IRLR8743TRPBF
RDS(on)=3.1 mΩ
IRLB8314PBF
RDS(on)=2.4 mΩ
IPD031N03L G
RDS(on)=3.1 mΩ
IRL3713PBF
RDS(on)=3.0 mΩ
IPB034N03L G
RDS(on)=3.4 mΩ
IRLB8743PBF
RDS(on)=3.2 mΩ
IPD040N03L G
RDS(on)=4.0 mΩ
IPP034N03L G
RDS(on)=3.4 mΩ
4-10
IPD050N03L G
RDS(on)=5.0 mΩ
IPB042N03L G
RDS(on)=4.2 mΩ
IPP042N03L G
RDS(on)=4.2 mΩ
IRLR8726TRPBF
RDS(on)=5.8 mΩ
IPB055N03L G
RDS(on)=5.5 mΩ
IRLB8748PBF
RDS(on)=4.8 mΩ
IPD060N03L G
RDS(on)=6.0 mΩ
IPB065N03L G
RDS(on)=6.5 mΩ
IPP055N03L G
RDS(on)=5.5 mΩ
IPD075N03L G
RDS(on)=7.5 mΩ
IPB080N03L G
RDS(on)=8.0 mΩ
IRL8113PBF
RDS(on)=6.0 mΩ
IRLR8729TRPBF
RDS(on)=8.9 mΩ
IRLB8721PBF
RDS(on)=8.7 mΩ
IPD090N03L G
RDS(on)=9.0 mΩ
10-25
IPD135N03L G
RDS(on)=13.5 mΩ
IRLR3103
RDS(on)=19.0 mΩ
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@ VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1 IPT004N03L
RDS(on)=0.4 mΩ
1-2
IRFH8303TRPBF
RDS(on)=1.1 mΩ
BSC011N03LS
RDS(on)=1.1 mΩ
BSC011N03LSI**
RDS(on)=1.1 mΩ
BSC011N03LST
RDS(on)=1.1 mΩ
IRFH8307TRPBF
RDS(on)=1.3 mΩ
IRF8301MTRPBF
RDS(on)=1.5 mΩ
BSC0500NSI**
RDS(on)=1.3 mΩ
BSZ0500NSI**
RDS(on)=1.5 mΩ
BSC014N03LS G
RDS(on)=1.4 mΩ
IRF8302MTRPBF**
RDS(on)=1.8 mΩ
BSZ019N03LS
RDS(on)=1.9 mΩ
BSC0901NS
RDS(on)=1.9 mΩ
BSZ0901NS
RDS(on)=2.0 mΩ
BSC0501NSI**
RDS(on)=1.9 mΩ
IPC055N03L3***
RDS(on)=2.7 mΩ
BSZ0501NSI**
RDS(on)=2.0 mΩ
BSC0901NSI**
RDS(on)=2.0 mΩ
** Monolithically integrated Schottky-like diode
*** RDS(on) typ. @VGS=4.5 V
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Product portfolio
OptiMOS™ and StrongIRFET™ 30V logic level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
Dual
PQFN 2 x 2
2-4
IRF8304MTRPBF
RDS(on)=2.2 mΩ
BSZ0901NSI**
RDS(on)=2.1 mΩ
BSC020N03LS G
RDS(on)=2.0 mΩ
IPC042N03L3****
RDS(on)=3.7 mΩ
IRLHM620TRPBF
RDS(on)=2.5 mΩ
BSC0502NSI**
RDS(on)=2.4 mΩ
IRF8306MTRPBF**
RDS(on)=2.5 mΩ
BSZ0902NS
RDS(on)=2.6 mΩ
BSC025N03LS G
RDS(on)=2.5 mΩ
BSC0902NS
RDS(on)=2.6 mΩ
IRF8252TRPBF
RDS(on)=2.7 mΩ
BSZ0902NSI**
RDS(on)=2.8 mΩ
BSC0902NSI**
RDS(on)=2.8 mΩ
IRF8788TRPBF
RDS(on)=2.8 mΩ
BSZ0502NSI**
RDS(on)=2.8 mΩ
IRFH8316TRPBF
RDS(on)=2.95 mΩ
BSC030N03LS G
RDS(on)= 3.0 mΩ
BSZ0503NSI**
RDS(on)=3.4 mΩ
IRFH8318TRPBF
RDS(on)=3.1 mΩ
IRLHM630***
RDS(on)= 3.5 mΩ
BSC0503NSI**
RDS(on)=3.2 mΩ
IRF7862TRPBF
RDS(on)=3.3 mΩ
BSZ035N03LS G
RDS(on)=3.5 mΩ
BSC034N03LS G
RDS(on)=3.4 mΩ
IRF8734TRPBF
RDS(on)=3.5 mΩ
IRFHM830
RDS(on)= 3.8 mΩ
BSC0504NSI**
RDS(on)=3.7 mΩ
BSZ0904NSI**
RDS(on)=4.0 mΩ
BSC0904NSI**
RDS(on)=3.7 mΩ
4-10
IRFHM830D
RDS(on)= 4.3 mΩ
IRFH8324TRPBF
RDS(on)=4.1 mΩ
BSZ0506NS
RDS(on)=4.4 mΩ
BSC042N03LS G
RDS(on)=4.2 mΩ
IRFHM8326TRPBF
RDS(on)=4.7 mΩ
BSC0906NS
RDS(on)=4.5 mΩ
IRFH8321TRPBF
RDS(on)=4.9 mΩ
IPC028N03L3
RDS(on)=5.0 mΩ
BSZ050N03LS G
RDS(on)=5.0 mΩ
IRFH8325TRPBF
RDS(on)=5.0 mΩ
IRF8736TRPBF
RDS(on)=4.8 mΩ
BSZ058N03LS G
RDS(on)=5.8 mΩ
BSC050N03LS G
RDS(on)=5.0 mΩ
IPC022N03L3
RDS(on)=5.3 mΩ
IRFHM8329TRPBF
RDS(on)=6.1 mΩ
BSC052N03LS
RDS(on)=5.2 mΩ
BSZ065N03LS
RDS(on)=6.5 mΩ
BSC057N03LS G
RDS(on)=5.7 mΩ
IRF8327S2
RDS(on)= 7.3 mΩ
IRFHM8330TRPBF
RDS(on)=6.6 mΩ
IRFH8330TRPBF
RDS(on)=6.6 mΩ
BSZ0994NS
RDS(on)= 7.0 mΩ
BSC080N03LS G
RDS(on)=8.0 mΩ
IRFHM831
RDS(on)= 7.8 mΩ
IRFH8334TRPBF
RDS(on)=9.0 mΩ
IRF8721TRPBF
RDS(on)=8.5 mΩ
BSZ088N03LS G
RDS(on)=8.8 mΩ
BSC090N03LS G
RDS(on)=9.0 mΩ
IRF8714TRPBF
RDS(on)=8.7 mΩ
IRFHM8334TRPBF
RDS(on)=9.0 mΩ
BSC0909NS
RDS(on)=9.2 mΩ
BSZ100N03LS G
RDS(on)=10.0 mΩ
10-63
IPC014N03L3
RDS(on)=10.3 mΩ
BSZ0909NS
RDS(on)=12.0 mΩ
BSC120N03LS G
RDS(on)=12.0 mΩ
IRF8707TRPBF
RDS(on)=11.9 mΩ
IRF7907TRPBF
R
DS(on)
=11.8 mΩ+16.4 mΩ
IRLHS6342***
RDS(on)= 16 mΩ
IRFHM8337TRPBF
RDS(on)=12.4 mΩ
IRFH8337TRPBF
RDS(on)=12.8 mΩ
IRL6342 1) ***
RDS(on) = 14.6 mΩ
IRF8513TRPBF
R
DS(on)
=2.7 mΩ+15.5 mΩ
IRFHS8342
RDS(on)= 16 mΩ
BSZ130N03LS G
RDS(on)=13.0 mΩ
IRL6372 1) ***
RDS(on) = 18 mΩ; dual
IRF8313TRPBF
R
DS(on)
=15.5 mΩ+15.5 mΩ
IRLHS6376***
RDS(on)= 63 mΩ; dual
IRFHM8363TRPBF
RDS(on)=14.9 mΩ
IRF7905TRPBF
R
DS(on)
=17.1 mΩ+21.8 mΩ
2 x 7.2 BSC072N03LD G
RDS(on)=7.2 mΩ
2 x 15 BSC150N03LD G
RDS(on)=15.0 mΩ
1) 2.5 VGS capable
** Monolithically integrated Schottky-like diode
*** RDS(on) max @VGS=4.5 V
**** RDS(on) typ. @VGS= 4.5 V
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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OptiMOS™ and StrongIRFET™ 40V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1
IRL40SC228
RDS(on) =0.65 mΩ
IRL7472L1TRPBF
RDS(on) =0.45 mΩ
BSC007N04LS6
RDS(on)=0.7 mΩ
IRL40T209
RDS(on)= 0.8 mΩ
IRL40SC209
RDS(on) =0.8 mΩ
1-2
IPB015N04L G
RDS(on) =1.5 mΩ
IPB011N04L G
RDS(on) =1.1 mΩ
IRL40B209
RDS(on) =1.25 mΩ
IRLP3034PBF
RDS(on) =1.7 mΩ
BSB014N04LX3 G
RDS(on) =1.4 mΩ
BSC010N04LS
RDS(on) =1.0 mΩ
IRLS3034TRLPBF
RDS(on) =1.7 mΩ
IRLS3034TRL7P
RDS(on) =1.4 mΩ
IRLB3034PBF
RDS(on) =1.7 mΩ
IRL7486MTRPBF
RDS(on) =1.4 mΩ
BSC010N04LS6
RDS(on) =1.0 mΩ
IRL40S212
RDS(on) =1.9 mΩ
IRL40B212
RDS(on) =1.9 mΩ
BSC010N04LST
RDS(on)=1.0 mΩ
BSC010N04LSI
RDS(on) =1.05 mΩ
BSC010N04LSC *
RDS(on)= 1.05 mΩ
BSC014N04LST
RDS(on) =1.4 mΩ
BSC014N04LS
RDS(on) =1.4 mΩ
BSC014N04LSI
RDS(on) =1.45 mΩ
BSC016N04LS G
RDS(on) =1.6 mΩ
BSZ018N04LS6
RDS(on)=1.8 mΩ
BSC018N04LS G
RDS(on) =1.8 mΩ
BSC019N04LS
RDS(on) =1.9 mΩ
BSC019N04LST
RDS(on) =1.9 mΩ
2-4
IRL40B215
RDS(on) =2.7 mΩ
BSZ021N04LS6
RDS(on) =2.1 mΩ
BSC022N04LS
RDS(on) =2.2 mΩ
BSZ024N04LS6
RDS(on) =2.4 mΩ
BSC022N04LS6
RDS(on) =2.2 mΩ
IPP039N04L G
RDS(on) =3.9 mΩ
BSZ025N04LS
RDS(on) =2.5 mΩ
BSC026N04LS
RDS(on) =2.6 mΩ
BSZ028N04LS
RDS(on) =2.8 mΩ
BSC027N04LS G
RDS(on) =2.7 mΩ
BSC032N04LS
RDS(on) =3.2 mΩ
IPD036N04L G
RDS(on)=3.6 mΩ
IRL1404S
RDS(on) =4.0 mΩ
BSZ034N04LS
RDS(on) =3.4 mΩ
BSC035N04LS G
RDS(on) =3.5 mΩ
4-10
IRLR31142TRPBF
RDS(on) =4.5 mΩ
BSZ040N04LS G
RDS(on) =4.0 mΩ
BSC050N04LS G
RDS(on) =5.0 mΩ
BSZ063N04LS6
RDS(on) =6.3 mΩ
BSC059N04LS G
RDS(on) =5.9 mΩ
BSC059N04LS6
RDS(on) =5.9 mΩ
BSZ097N04LS G
RDS(on) =9.7 mΩ
BSC093N04LS G
RDS(on) =9.3 mΩ
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* Increased creepage distance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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79
OptiMOS™ and StrongIRFET™ 30V logic level 5 V optimized
RDS(on), max.
@VGS=10V
[mΩ]
PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
Dual
SOT-23 TSOP-6
1-2
BSC014N03MS G
RDS(on) =1.4 mΩ
BSC016N03MS G
RDS(on) =1.6 mΩ
BSC020N03MS G
RDS(on) =2.0 mΩ
2-4
BSC025N03MS G
RDS(on) =2.5 mΩ
BSO033N03MS G
RDS(on) =3.3 mΩ
BSZ035N03MS G
RDS(on) =3.5 mΩ
BSC030N03MS G
RDS(on) =3.0 mΩ
BSO040N03MS G
RDS(on) =4.0 mΩ
4-10
BSC042N03MS G
RDS(on) =4.2 mΩ
BSZ050N03MS G
RDS(on) =5.0 mΩ
BSC050N03MS G
RDS(on) =5.0 mΩ
BSC057N03MS G
RDS(on) =5.7 mΩ
BSZ058N03MS G
RDS(on) =5.8 mΩ
BSC080N03MS G
RDS(on) =8.0 mΩ
BSZ088N03MS G
RDS(on) =8.8 mΩ
BSC090N03MS G
RDS(on) =9.0 mΩ
BSZ100N03MS G
RDS(on) =10.0 mΩ
BSC100N03MS G
RDS(on) =10.0 mΩ
>10
BSZ130N03MS G
RDS(on) =13.0 mΩ
BSC120N03MS G
RDS(on) =12.0 mΩ
BSO110N03MS G
RDS(on) =11.0 mΩ
IRLML0030
RDS(on)=27 mΩ
IRLTS6342***
RDS(on)=14.6 mΩ
IRLML6344 1) ***
RDS(on)=29 mΩ
IRFTS8342
RDS(on)=19 mΩ
IRLML6346 1) ***
RDS(on)=63 mΩ
IRLML2030
RDS(on)=100 mΩ
2 x 15 BSO150N03MD G
RDS(on) =15.0 mΩ
2 x 22 BSO220N03MD G
RDS(on) =22.0 mΩ
OptiMOS™ and StrongIRFET™ 40V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-220 TO-247 Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-220
FullPAK
<1
IRFS7430TRL7PP
RDS(on) =0.75 mΩ
IPC218N04N3
RDS(on) =0.9 mΩ
1-2
IRFS7430TRLPBF
RDS(on) =1.3 mΩ
IRFS7434TRL7PP
RDS(on) =1.0 mΩ
IRFB7430PBF
RDS(on) =1.3 mΩ
IRFP7430PBF
RDS(on) =1.3 mΩ
IPC171N04N
RDS(on) =1.1 mΩ
IRF7739L1TRPBF
RDS(on) =1.0 mΩ
IRFH7084TRPBF
RDS(on) =1.25 mΩ
IPB015N04N G
RDS(on) =1.5 mΩ
IPB011N04N G
RDS(on) =1.1 mΩ
IPP015N04N G
RDS(on) =1.5 mΩ
IRF7480MTRPBF
RDS(on) =1.2 mΩ
IRFH7004TRPBF
RDS(on) =1.4 mΩ
IRFS3004
RDS(on) =1.75 mΩ
IRFS3004-7P
RDS(on) =1.25 mΩ
IRF7946TRPBF
RDS(on) =1.4 mΩ
BSC017N04NS G
RDS(on) =1.7 mΩ
IRFS7434TRLPBF
RDS(on) =1.6 mΩ
IRFS7437TRL7PP
RDS(on) =1.4 mΩ
IRFB7434PBF
RDS(on) =1.6 mΩ
BSB015N04NX3 G
RDS(on) =1.5 mΩ
IRF40H210
RDS(on) =1.7 mΩ
IRFS7437TRLPBF
RDS(on) =1.8 mΩ
IPB020N04N G
RDS(on) =2.0 mΩ
IRFB7437PBF
RDS(on) =2.0 mΩ
IRF40DM229
RDS(on)=1.85 mΩ
BSC019N04NS G
RDS(on) =1.9 mΩ
2-4
IRFR7440TRPBF
RDS(on) =2.4 mΩ
IPP023N04N G
RDS(on) =2.3 mΩ
IRF7483MTRPBF
RDS(on) =2.3 mΩ
IRFH7440TRPBF
RDS(on) =2.4 mΩ
IRFR7446TRPBF
RDS(on) =3.9 mΩ
IRFS7440TRLPBF
RDS(on) =2.5 mΩ
IRFB7440PBF
RDS(on) =2.5 mΩ
BSC030N04NS G
RDS(on) =3.0 mΩ
IRF1404S
RDS(on) =4.0 mΩ
IRFB7446PBF
RDS(on) =3.3 mΩ
IRFH7446TRPBF
RDS(on) =3.3 mΩ
4-10
IPP041N04N G
RDS(on) =4.1 mΩ
BSC054N04NS G
RDS(on)=5.4 mΩ
IPA041N04N G
RDS(on)=4.1 mΩ
IRF40R207
RDS(on) =5.1 mΩ
IRF40B207
RDS(on) =4.5 mΩ
IPP048N04N G
RDS(on)=4.8 mΩ
>10
BSZ105N04NS G
RDS(on) =10.5 mΩ
BSZ165N04NS G
RDS(on) =16.5 mΩ
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1) 2.5 VGS capable
*** RDS(on) max @ VGS=4.5 V
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
79
OptiMOS™ and StrongIRFET™ 40V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1
IRL40SC228
RDS(on) =0.65 mΩ
IRL7472L1TRPBF
RDS(on) =0.45 mΩ
BSC007N04LS6
RDS(on)=0.7 mΩ
IRL40T209
RDS(on)= 0.8 mΩ
IRL40SC209
RDS(on) =0.8 mΩ
1-2
IPB015N04L G
RDS(on) =1.5 mΩ
IPB011N04L G
RDS(on) =1.1 mΩ
IRL40B209
RDS(on) =1.25 mΩ
IRLP3034PBF
RDS(on) =1.7 mΩ
BSB014N04LX3 G
RDS(on) =1.4 mΩ
BSC010N04LS
RDS(on) =1.0 mΩ
IRLS3034TRLPBF
RDS(on) =1.7 mΩ
IRLS3034TRL7P
RDS(on) =1.4 mΩ
IRLB3034PBF
RDS(on) =1.7 mΩ
IRL7486MTRPBF
RDS(on) =1.4 mΩ
BSC010N04LS6
RDS(on) =1.0 mΩ
IRL40S212
RDS(on) =1.9 mΩ
IRL40B212
RDS(on) =1.9 mΩ
BSC010N04LST
RDS(on)=1.0 mΩ
BSC010N04LSI
RDS(on) =1.05 mΩ
BSC010N04LSC *
RDS(on)= 1.05 mΩ
BSC014N04LST
RDS(on) =1.4 mΩ
BSC014N04LS
RDS(on) =1.4 mΩ
BSC014N04LSI
RDS(on) =1.45 mΩ
BSC016N04LS G
RDS(on) =1.6 mΩ
BSZ018N04LS6
RDS(on)=1.8 mΩ
BSC018N04LS G
RDS(on) =1.8 mΩ
BSC019N04LS
RDS(on) =1.9 mΩ
BSC019N04LST
RDS(on) =1.9 mΩ
2-4
IRL40B215
RDS(on) =2.7 mΩ
BSZ021N04LS6
RDS(on) =2.1 mΩ
BSC022N04LS
RDS(on) =2.2 mΩ
BSZ024N04LS6
RDS(on) =2.4 mΩ
BSC022N04LS6
RDS(on) =2.2 mΩ
IPP039N04L G
RDS(on) =3.9 mΩ
BSZ025N04LS
RDS(on) =2.5 mΩ
BSC026N04LS
RDS(on) =2.6 mΩ
BSZ028N04LS
RDS(on) =2.8 mΩ
BSC027N04LS G
RDS(on) =2.7 mΩ
BSC032N04LS
RDS(on) =3.2 mΩ
IPD036N04L G
RDS(on)=3.6 mΩ
IRL1404S
RDS(on) =4.0 mΩ
BSZ034N04LS
RDS(on) =3.4 mΩ
BSC035N04LS G
RDS(on) =3.5 mΩ
4-10
IRLR31142TRPBF
RDS(on) =4.5 mΩ
BSZ040N04LS G
RDS(on) =4.0 mΩ
BSC050N04LS G
RDS(on) =5.0 mΩ
BSZ063N04LS6
RDS(on) =6.3 mΩ
BSC059N04LS G
RDS(on) =5.9 mΩ
BSC059N04LS6
RDS(on) =5.9 mΩ
BSZ097N04LS G
RDS(on) =9.7 mΩ
BSC093N04LS G
RDS(on) =9.3 mΩ
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Product portfolio
2) 6 V rated (RDS(on) also specified @ VGS = 6 V)
3) Coming soon
OptiMOS™ and StrongIRFET™ 60V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1 IPT007N06N 2)
RDS(on) =0.7 mΩ
1-2
IPC218N06N3
RDS(on) =1.3 mΩ
IRF7749L1TRPBF
RDS(on) =1.5 mΩ
BSC012N06NS
RDS(on) =1.2 mΩ
IPT012N06N 2)
RDS(on) =1.2 mΩ
BSC014N06NS 2)
RDS(on) =1.4 mΩ
BSC014N06NST 2)
RDS(on) =1.45 mΩ
BSC016N06NST 2)
RDS(on) =1.6 mΩ
BSC016N06NS 2)
RDS(on) =1.6 mΩ
BSC019N06NS 2)
RDS(on) =1.9 mΩ
2-4
IRF7748L1TRPBF
RDS(on) =2.2 mΩ
BSC028N06NS 2)
RDS(on) =2.8 mΩ
BSC028N06NST 2)
RDS(on) =2.8 mΩ
BSB028N06NN3 G
RDS(on) =2.8 mΩ
BSC031N06NS3 G
RDS(on) =3.1 mΩ
IRF60DM206
RDS(on) =2.9 mΩ
IRFH7085TRPBF
RDS(on) =3.2 mΩ
BSC034N06NS 2)
RDS(on) =3.4 mΩ
IRF7580MTRPBF
RDS(on) =3.6 mΩ
BSC039N06NS 2)
RDS(on) =3.9 mΩ
4-10
IRF6648
RDS(on) =7.0 mΩ
BSZ042N06NS 2)
RDS(on) =4.2 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRF6674
RDS(on) =11.0 mΩ
IRFH7545TRPBF
RDS(on) =5.2 mΩ
BSZ068N06NS 2)
RDS(on) =6.8 mΩ
BSC066N06NS 2)
RDS(on) =6.6 mΩ
BSC076N06NS3 G
RDS(on) =7.6 mΩ
BSZ100N06NS 2)
RDS(on) =10.0 mΩ
BSC097N06NS 2)
RDS(on) =9.7 mΩ
BSC097N06NST 2)
RDS(on)=9.7 mΩ
>10 BSZ110N06NS3 G
RDS(on) =11.0 mΩ
BSC110N06NS3 G
RDS(on) =11.0 mΩ
OptiMOS™ and StrongIRFET™ 60V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-262
(I2PAK)
TO-220 Bare die
(RDS(on) typ.)
PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SOT-23
1-2
IPB019N06L3 G
RDS(on) =1.9 mΩ
IPB016N06L3 G
RDS(on) =1.6 mΩ
IPC218N06L3
RDS(on) =1.2 mΩ
BSC014N06LS5
RDS(on) = 1.4 mΩ
IRL60S216
RDS(on) =1.95 mΩ
IRL60SL216
RDS(on) =1.95 mΩ
IRL60B216
RDS(on) =1.9 mΩ
2-4
IRLS3036TRLPBF
RDS(on) =2.4 mΩ
IRLB3036PBF
RDS(on) =2.4 mΩ
BSC027N06LS5
RDS(on) =2.7 mΩ
IPD031N06L3 G
RDS(on) =3.1 mΩ
IPB034N06L3 G
RDS(on) =3.4 mΩ
IPP037N06L3 G
RDS(on) =3.7 mΩ
BSC028N06LS3 G
RDS(on) =2.8 mΩ
4-10
IPD048N06L3 G
RDS(on) =4.8 mΩ
IPP052N06L3 G
RDS(on) =5.2 mΩ
BSZ040N06LS5
RDS(on) =4.0 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRLR3636TRPBF
RDS(on) =6.8 mΩ
BSZ065N06LS5
RDS(on) =6.5 mΩ
BSC065N06LS5
RDS(on)=6.5 mΩ
IPD079N06L3 G
RDS(on) =7.9 mΩ
IPB081N06L3 G
RDS(on) =8.1 mΩ
IPI084N06L3 G
RDS(on) =8.4 mΩ
IPP084N06L3 G
RDS(on) =8.4 mΩ
BSZ067N06LS3 G
RDS(on) =6.7 mΩ
BSC067N06LS3 G
RDS(on) =6.7 mΩ
BSZ099N06LS5
RDS(on) =9.9 mΩ
BSC094N06LS5
RDS(on) =9.4 mΩ
BSZ100N06LS3 G
RDS(on) =10.0 mΩ
BSC100N06LS3 G
RDS(on) =10.0 mΩ
>10
IPD350N06L G
RDS(on) =35.0 mΩ
IRL60HS118
RDS(on)=17.0 mΩ
IRLML0060
RDS(on)=92 mΩ
IRLML2060
RDS(on)=480 mΩ
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2) 6 V rated (RDS(on) also specified @ VGS=6 V)
OptiMOS™ and StrongIRFET™ 60V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
1-2
IPB010N06N 2)
RDS(on) =1.0 mΩ
IRFS7530TRL7PP
RDS(on) =1.4 mΩ
IPB014N06N 2)
RDS(on) =1.4 mΩ
IPB017N06N3 G
RDS(on) =1.7 mΩ
IRFS7530TRLPBF
RDS(on) =2.0 mΩ
IRFS7534TRL7PP
RDS(on) =1.95 mΩ
IPI020N06N 2)
RDS(on) =2.0 mΩ
IRFB7530PBF
RDS(on) =2.0 mΩ
IRFP7530PBF
RDS(on) =2.0 mΩ
2-4
IPD025N06N 2)
RDS(on) =2.5 mΩ
IRFS7534TRLPBF
RDS(on) =2.4 mΩ
IRFS3006TRL7PP
RDS(on) =2.1 mΩ
IPP020N06N 2)
RDS(on) =2.0 mΩ
IRFS3006
RDS(on) =2.5 mΩ
IPI024N06N3 G
RDS(on) =2.4 mΩ
IRFB7534PBF
RDS(on) =2.4 mΩ
IPB026N06N 2)
RDS(on) =2.6 mΩ
IPP024N06N3 G 2)
RDS(on) =2.4 mΩ
IRFP3006PBF
RDS(on) =2.5 mΩ
IPB029N06N3 G
RDS(on) =2.9 mΩ
IPI029N06N 2)
RDS(on) =2.9 mΩ
IPP029N06N 2)
RDS(on) =2.9 mΩ
IPA029N06N 2)
RDS(on) =2.9 mΩ
IRFP3206PBF
RDS(on) =3.0 mΩ
IPD033N06N 2)
RDS(on)=3.3 mΩ
IRFS3206
RDS(on)=3.0 mΩ
IPI032N06N3 G
RDS(on) =3.2 mΩ
IPP032N06N3 G
RDS(on) =3.2 mΩ
IPA032N06N3 G
RDS(on) =3.2 mΩ
IPD034N06N3 G
RDS(on) =3.4 mΩ
IRFS7537TRLPBF
RDS(on) =3.3 mΩ
IRFB7537PBF
RDS(on) =3.3 mΩ
IRFP7537PBF
RDS(on) =3.3 mΩ
IPD038N06N3 G
RDS(on) =3.8 mΩ
IPB037N06N3 G
RDS(on) =3.7 mΩ
IPP040N06N3 G
RDS(on) =4.0 mΩ
IRFS3306
RDS(on) =4.2 mΩ
IPI040N06N3 G
RDS(on) =4.0 mΩ
IPP040N06N 2)
RDS(on) =4.0 mΩ
IPA040N06N 2)
RDS(on) =4.0 mΩ
4-10
IRFR7540TRPBF
RDS(on) =4.8 mΩ
IRFS7540TRLPBF
RDS(on) =5.1 mΩ
IRFB7540PBF
RDS(on) =5.1 mΩ
IPA057N06N3 G
RDS(on) =5.7 mΩ
IPD053N06N 2)
RDS(on) =5.3 mΩ
IPB054N06N3 G
RDS(on)=5.4 mΩ
IPP057N06N3 G 2)
RDS(on) =5.7 mΩ
IPB057N06N 2)
RDS(on) =5.7 mΩ
IRFB7545PBF
RDS(on) =5.9 mΩ
IRFR7546TRPBF
RDS(on) =7.9 mΩ
IRF1018ES
RDS(on)=8.4 mΩ
IPP060N06N 2)
RDS(on) =6.0 mΩ
IPA060N06N 2)
RDS(on) =6.0 mΩ
IPD088N06N3 G
RDS(on)=8.8 mΩ
IRF60B217
RDS(on) =9.0 mΩ
IPA093N06N3 G
RDS(on) =9.3 mΩ
IRF60R217
RDS(on) =9.9 mΩ
IPB090N06N3 G
RDS(on) =9.0 mΩ
IPP093N06N3 G
RDS(on) =9.3 mΩ
>10 IRFS3806
RDS(on) =15.8 mΩ
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2) 6 V rated (RDS(on) also specified @ VGS = 6 V)
3) Coming soon
OptiMOS™ and StrongIRFET™ 60V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
<1 IPT007N06N 2)
RDS(on) =0.7 mΩ
1-2
IPC218N06N3
RDS(on) =1.3 mΩ
IRF7749L1TRPBF
RDS(on) =1.5 mΩ
BSC012N06NS
RDS(on) =1.2 mΩ
IPT012N06N 2)
RDS(on) =1.2 mΩ
BSC014N06NS 2)
RDS(on) =1.4 mΩ
BSC014N06NST 2)
RDS(on) =1.45 mΩ
BSC016N06NST 2)
RDS(on) =1.6 mΩ
BSC016N06NS 2)
RDS(on) =1.6 mΩ
BSC019N06NS 2)
RDS(on) =1.9 mΩ
2-4
IRF7748L1TRPBF
RDS(on) =2.2 mΩ
BSC028N06NS 2)
RDS(on) =2.8 mΩ
BSC028N06NST 2)
RDS(on) =2.8 mΩ
BSB028N06NN3 G
RDS(on) =2.8 mΩ
BSC031N06NS3 G
RDS(on) =3.1 mΩ
IRF60DM206
RDS(on) =2.9 mΩ
IRFH7085TRPBF
RDS(on) =3.2 mΩ
BSC034N06NS 2)
RDS(on) =3.4 mΩ
IRF7580MTRPBF
RDS(on) =3.6 mΩ
BSC039N06NS 2)
RDS(on) =3.9 mΩ
4-10
IRF6648
RDS(on) =7.0 mΩ
BSZ042N06NS 2)
RDS(on) =4.2 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRF6674
RDS(on) =11.0 mΩ
IRFH7545TRPBF
RDS(on) =5.2 mΩ
BSZ068N06NS 2)
RDS(on) =6.8 mΩ
BSC066N06NS 2)
RDS(on) =6.6 mΩ
BSC076N06NS3 G
RDS(on) =7.6 mΩ
BSZ100N06NS 2)
RDS(on) =10.0 mΩ
BSC097N06NS 2)
RDS(on) =9.7 mΩ
BSC097N06NST 2)
RDS(on)=9.7 mΩ
>10 BSZ110N06NS3 G
RDS(on) =11.0 mΩ
BSC110N06NS3 G
RDS(on) =11.0 mΩ
OptiMOS™ and StrongIRFET™ 60V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK 7-pin)
TO-262
(I2PAK)
TO-220 Bare die
(RDS(on) typ.)
PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SOT-23
1-2
IPB019N06L3 G
RDS(on) =1.9 mΩ
IPB016N06L3 G
RDS(on) =1.6 mΩ
IPC218N06L3
RDS(on) =1.2 mΩ
BSC014N06LS5
RDS(on) = 1.4 mΩ
IRL60S216
RDS(on) =1.95 mΩ
IRL60SL216
RDS(on) =1.95 mΩ
IRL60B216
RDS(on) =1.9 mΩ
2-4
IRLS3036TRLPBF
RDS(on) =2.4 mΩ
IRLB3036PBF
RDS(on) =2.4 mΩ
BSC027N06LS5
RDS(on) =2.7 mΩ
IPD031N06L3 G
RDS(on) =3.1 mΩ
IPB034N06L3 G
RDS(on) =3.4 mΩ
IPP037N06L3 G
RDS(on) =3.7 mΩ
BSC028N06LS3 G
RDS(on) =2.8 mΩ
4-10
IPD048N06L3 G
RDS(on) =4.8 mΩ
IPP052N06L3 G
RDS(on) =5.2 mΩ
BSZ040N06LS5
RDS(on) =4.0 mΩ
IRLH5036TRPBF
RDS(on) =4.4 mΩ
IRLR3636TRPBF
RDS(on) =6.8 mΩ
BSZ065N06LS5
RDS(on) =6.5 mΩ
BSC065N06LS5
RDS(on)=6.5 mΩ
IPD079N06L3 G
RDS(on) =7.9 mΩ
IPB081N06L3 G
RDS(on) =8.1 mΩ
IPI084N06L3 G
RDS(on) =8.4 mΩ
IPP084N06L3 G
RDS(on) =8.4 mΩ
BSZ067N06LS3 G
RDS(on) =6.7 mΩ
BSC067N06LS3 G
RDS(on) =6.7 mΩ
BSZ099N06LS5
RDS(on) =9.9 mΩ
BSC094N06LS5
RDS(on) =9.4 mΩ
BSZ100N06LS3 G
RDS(on) =10.0 mΩ
BSC100N06LS3 G
RDS(on) =10.0 mΩ
>10
IPD350N06L G
RDS(on) =35.0 mΩ
IRL60HS118
RDS(on)=17.0 mΩ
IRLML0060
RDS(on)=92 mΩ
IRLML2060
RDS(on)=480 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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OptiMOS™ and StrongIRFET™ 100V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
1-2
IPB020N10N5
RDS(on) =2.0 mΩ
IPB017N10N5
RDS(on) =1.7 mΩ
IRF100P218
RDS(on)=1.1 mΩ
IPB020N10N5LF
RDS(on)=2.0 mΩ
IPB017N10N5LF
RDS(on)=1.7 mΩ
IRF100P219
RDS(on)=2.1 mΩ
2-4
IPB027N10N3 G
RDS(on) =2.7 mΩ
IPB024N10N5
RDS(on) =2.4 mΩ
IPP023N10N5
RDS(on) =2.3 mΩ
IRFP4468PBF
RDS(on) =2.6 mΩ
IPB027N10N5
RDS(on) =2.7 mΩ
IPB025N10N3 G
RDS(on) =2.5 mΩ
IPI030N10N3 G
RDS(on) =3.0 mΩ
IPP030N10N3 G
RDS(on) =3.0 mΩ
IPA030N10N3 G
RDS(on) =3.0 mΩ
IPB033N10N5LF
RDS(on) =3.3 mΩ
IPB032N10N5
RDS(on) =3.2 mΩ
IPP030N10N5
RDS(on)=3.0 mΩ
IPB039N10N3 G
RDS(on) =3.9 mΩ
IPP039N10N5
RDS(on)=3.9 mΩ
4-10
IPD050N10N5
RDS(on)=5.0 mΩ
IPB042N10N3 G
RDS(on) =4.2 mΩ
IPI045N10N3 G
RDS(on) =4.5 mΩ
IRFB4110PBF
RDS(on) =4.5 mΩ
IPA045N10N3 G
RDS(on) =4.5 mΩ
IRFP4110PBF
RDS(on) =4.5 mΩ
IPD068N10N3 G
RDS(on) =6.8 mΩ
IRFS4010TRLPBF
RDS(on) =4.7 mΩ
IPP045N10N3 G
RDS(on) =4.5 mΩ
IPA083N10N5
RDS(on) =8.3 mΩ
IRFP4310ZPBF
RDS(on) =6.0 mΩ
IPB065N10N3 G
RDS(on)=6.5 mΩ
IRFB4310ZPBF
RDS(on) =6.0 mΩ
IPA086N10N3 G
RDS(on) =8.6 mΩ
IRFS4310ZTRLPBF
RDS(on) =7.0 mΩ
IPI072N10N3 G
RDS(on) =7.2 mΩ
IPP072N10N3 G
RDS(on) =7.2 mΩ
IPD082N10N3 G
RDS(on) =8.2 mΩ
IPP083N10N5
RDS(on) =8.3 mΩ
IPB083N10N3 G
RDS(on) =8.3 mΩ
IPI086N10N3 G
RDS(on) =8.6 mΩ
IPP086N10N3 G
RDS(on) =8.6 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFP4410ZPBF
RDS(on) =9.0 mΩ
10-25
IPD122N10N3 G
RDS(on) =12.2 mΩ
IPD12CN10N G
RDS(on)=12.4 mΩ
IPB123N10N3 G
RDS(on) =12.3 mΩ
IRFR4510TRPBF
RDS(on) =13.9 mΩ
IRFS4510TRLPBF
RDS(on) =13.9 mΩ
IPD180N10N3 G
RDS(on) =18.0 mΩ
IPI180N10N3 G
RDS(on) =18.0 mΩ
IPD25CN10N G
RDS(on) =25.0 mΩ
>25
IPD33CN10N G
RDS(on) =33.0 mΩ
IPD78CN10N G
RDS(on) =78.0 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
82
83
OptiMOS™ and StrongIRFET™ 75 V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-220 TO-247 Bare die
(RDS(on) typ.)
DirectFET™ SuperSO8
1-2 IPB020NE7N3 G
RDS(on) =2.0 mΩ
IRFS7730TRL7PP
RDS(on) =2.0 mΩ
IRFP7718PBF
RDS(on) =1.8 mΩ
IPC302NE7N3
RDS(on) =1.2 mΩ
2-4
IRFS7730TRLPBF
RDS(on) =2.6 mΩ
IPP023NE7N3 G
RDS(on) =2.3 mΩ
IPB031NE7N3 G
RDS(on) =3.1 mΩ
IRFS7734TRL7PP
RDS(on) =3.05 mΩ
IRFB7730PBF
RDS(on) =2.6 mΩ
BSC036NE7NS3 G
RDS(on) =3.6 mΩ
IRFS7734TRLPBF
RDS(on) =3.5 mΩ
IPP034NE7N3 G
RDS(on) =3.4 mΩ
IRFB7734PBF
RDS(on) =3.5 mΩ
4-10
IPB049NE7N3 G
RDS(on) =4.9 mΩ
IPP052NE7N3 G
RDS(on) =5.2 mΩ
BSC042NE7NS3 G
RDS(on) =4.2 mΩ
IRFS7762TRLPBF
RDS(on) =6.7 mΩ
IPP062NE7N3 G
RDS(on) =6.2 mΩ
IRF7780MTRPBF
RDS(on) =5.7 mΩ
IRFR7740TRPBF
RDS(on) =7.2 mΩ
IRFB7740PBF
RDS(on) =7.3 mΩ
IRFS7787TRLPBF
RDS(on) =8.4 mΩ
IRFB7787PBF
RDS(on) =8.4 mΩ
IRFH7787TRPBF
RDS(on) =8.0 mΩ
>10 IRFR7746TRPBF
RDS(on) =11.2 mΩ
IRFB7746PBF
RDS(on) =10.6 mΩ
BSF450NE7NH3 1)
RDS(on) =45.0 mΩ
1) DirectFET™ S
OptiMOS™ and StrongIRFET™ 80V normal level – logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 2 x 2 PQFN 3.3
x 3.3
SuperSO8 TO-Leadless
1-2
IPB017N08N5
RDS(on) =1.7 mΩ
IPB015N08N5
RDS(on) =1.5 mΩ
IPC302N08N3
RDS(on) =1.2 mΩ
IPT012N08N5
RDS(on) =1.2 mΩ
IPB020N08N5
RDS(on) =2.0 mΩ
IPB019N08N3 G
RDS(on) =1.9 mΩ
IPP020N08N5
RDS(on) =2.0 mΩ
BSC021N08NS5
RDS(on) =2.1 mΩ
2-4
IPB024N08N5
RDS(on) =2.4 mΩ
IPP023N08N5
RDS(on) =2.3 mΩ
BSC025N08LS5
RDS(on) =2.5 mΩ
IPB025N08N3 G
RDS(on) =2.5 mΩ
IPB030N08N3 G
RDS(on) =3.0 mΩ
IPP027N08N5
RDS(on) =2.7 mΩ
BSC026N08NS5
RDS(on) =2.6 mΩ
IPP028N08N3 G
RDS(on) =2.8 mΩ
IPA028N08N3 G
RDS(on) =2.8 mΩ
BSC030N08NS5
RDS(on) =3.0 mΩ
IPT029N08N5
RDS(on) =2.9 mΩ
IPB031N08N5
RDS(on) =3.1 mΩ
IPP034N08N5
RDS(on) =3.4 mΩ
BSC037N08NS5
RDS(on) =3.7 mΩ
BSC037N08NS5T
RDS(on)= 3.7 mΩ
IPB035N08N3 G
RDS(on) =3.5 mΩ
IPI037N08N3 G
RDS(on) =3.7 mΩ
IPP037N08N3 G
RDS(on) =3.7 mΩ
IPA037N08N3 G
RDS(on) =3.7 mΩ
BSC040N08NS5
RDS(on) =4.0 mΩ
4-10
IPD046N08N5
RDS(on)=4.6 mΩ
IPB049N08N5
RDS(on) =4.9 mΩ
IPP052N08N5
RDS(on) =5.2 mΩ
BSB044N08NN3 G
R
DS(on)
=4.4 mΩ
BSC047N08NS3 G
R
DS(on)
=4.7 mΩ
IPD053N08N3 G
RDS(on) =5.3 mΩ
IPB054N08N3 G
RDS(on) =5.4 mΩ
IPP057N08N3 G
RDS(on) =5.7 mΩ
IPA057N08N3 G
RDS(on) =5.7 mΩ
BSC052N08NS5
RDS(on) =5.2 mΩ
IPB067N08N3 G
RDS(on) =6.7 mΩ
BSZ070N08LS5
RDS(on) =7.0 mΩ
BSC057N08NS3 G
RDS(on) =5.7 mΩ
BSZ075N08NS5
RDS(on) =7.5 mΩ
BSC061N08NS5
RDS(on) =6.1 mΩ
IPD096N08N3 G
RDS(on) =9.6 mΩ
IPP100N08N3 G
RDS(on) =9.7 mΩ
BSZ084N08NS5
RDS(on) =8.4 mΩ
BSC072N08NS5
RDS(on) =7.2 mΩ
>10
BSB104N08NP3
RDS(on) =10.4 mΩ
IRL80HS120
RDS(on)=32.0 mΩ
BSZ110N08NS5
RDS(on) =11.0 mΩ
BSC117N08NS5
RDS(on) =11.7 mΩ
IPD135N08N3 G
RDS(on) =13.5 mΩ
BSZ123N08NS3 G
RDS(on) =12.3 mΩ
BSC123N08NS3
RDS(on) =12.3 mΩ
BSZ340N08NS3 G
RDS(on) =34.0 mΩ
BSC340N08NS3 G
RDS(on) =34.0 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
83
OptiMOS™ and StrongIRFET™ 100V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D²PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
1-2
IPB020N10N5
RDS(on) =2.0 mΩ
IPB017N10N5
RDS(on) =1.7 mΩ
IRF100P218
RDS(on)=1.1 mΩ
IPB020N10N5LF
RDS(on)=2.0 mΩ
IPB017N10N5LF
RDS(on)=1.7 mΩ
IRF100P219
RDS(on)=2.1 mΩ
2-4
IPB027N10N3 G
RDS(on) =2.7 mΩ
IPB024N10N5
RDS(on) =2.4 mΩ
IPP023N10N5
RDS(on) =2.3 mΩ
IRFP4468PBF
RDS(on) =2.6 mΩ
IPB027N10N5
RDS(on) =2.7 mΩ
IPB025N10N3 G
RDS(on) =2.5 mΩ
IPI030N10N3 G
RDS(on) =3.0 mΩ
IPP030N10N3 G
RDS(on) =3.0 mΩ
IPA030N10N3 G
RDS(on) =3.0 mΩ
IPB033N10N5LF
RDS(on) =3.3 mΩ
IPB032N10N5
RDS(on) =3.2 mΩ
IPP030N10N5
RDS(on)=3.0 mΩ
IPB039N10N3 G
RDS(on) =3.9 mΩ
IPP039N10N5
RDS(on)=3.9 mΩ
4-10
IPD050N10N5
RDS(on)=5.0 mΩ
IPB042N10N3 G
RDS(on) =4.2 mΩ
IPI045N10N3 G
RDS(on) =4.5 mΩ
IRFB4110PBF
RDS(on) =4.5 mΩ
IPA045N10N3 G
RDS(on) =4.5 mΩ
IRFP4110PBF
RDS(on) =4.5 mΩ
IPD068N10N3 G
RDS(on) =6.8 mΩ
IRFS4010TRLPBF
RDS(on) =4.7 mΩ
IPP045N10N3 G
RDS(on) =4.5 mΩ
IPA083N10N5
RDS(on) =8.3 mΩ
IRFP4310ZPBF
RDS(on) =6.0 mΩ
IPB065N10N3 G
RDS(on)=6.5 mΩ
IRFB4310ZPBF
RDS(on) =6.0 mΩ
IPA086N10N3 G
RDS(on) =8.6 mΩ
IRFS4310ZTRLPBF
RDS(on) =7.0 mΩ
IPI072N10N3 G
RDS(on) =7.2 mΩ
IPP072N10N3 G
RDS(on) =7.2 mΩ
IPD082N10N3 G
RDS(on) =8.2 mΩ
IPP083N10N5
RDS(on) =8.3 mΩ
IPB083N10N3 G
RDS(on) =8.3 mΩ
IPI086N10N3 G
RDS(on) =8.6 mΩ
IPP086N10N3 G
RDS(on) =8.6 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFS4410ZTRLPBF
RDS(on) =9.0 mΩ
IRFP4410ZPBF
RDS(on) =9.0 mΩ
10-25
IPD122N10N3 G
RDS(on) =12.2 mΩ
IPD12CN10N G
RDS(on)=12.4 mΩ
IPB123N10N3 G
RDS(on) =12.3 mΩ
IRFR4510TRPBF
RDS(on) =13.9 mΩ
IRFS4510TRLPBF
RDS(on) =13.9 mΩ
IPD180N10N3 G
RDS(on) =18.0 mΩ
IPI180N10N3 G
RDS(on) =18.0 mΩ
IPD25CN10N G
RDS(on) =25.0 mΩ
>25
IPD33CN10N G
RDS(on) =33.0 mΩ
IPD78CN10N G
RDS(on) =78.0 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
85
OptiMOS™ and StrongIRFET™ 120V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 Bare die
(RDS(on) typ.)
PQFN 3.3 x 3.3 SuperSO8
2-4
IPC302N12N3
RDS(on) =2.5 mΩ
IPC26N12N
RDS(on) =3.0 mΩ
IPB038N12N3 G
RDS(on) =3.8 mΩ
IPB036N12N3 G
RDS(on) =3.6 mΩ
IPC26N12NR
RDS(on)=3.2 mΩ
4-10
IPI041N12N3 G
RDS(on) =4.1 mΩ
IPP041N12N3 G
RDS(on) =4.1 mΩ
IPP048N12N3 G
RDS(on) =4.8 mΩ
IPI076N12N3 G
RDS(on) =7.6 mΩ
IPP076N12N3 G
RDS(on) =7.6 mΩ
BSC077N12NS3 G
RDS(on) =7.7 mΩ
10-25
IPD110N12N3 G
RDS(on) =11.0 mΩ
IPP114N12N3 G
RDS(on) =11.4 mΩ
IPB144N12N3 G
RDS(on) =14.4 mΩ
IPI147N12N3 G
RDS(on) =14.7 mΩ
IPP147N12N3 G
RDS(on) =14.7 mΩ
BSZ240N12NS3 G
RDS(on) =24.0 mΩ
BSC190N12NS3 G
RDS(on) =19.0 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
84
85
1) DirectFET™ S
2) RDS(on) typ. specified @ 4.5 V
3) Coming soon
OptiMOS™ and StrongIRFET™ 100V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 TO-Leadless
1-2
IPC302N10N3
RDS(on) =1.7 mΩ
IPT015N10N5
RDS(on) =1.5 mΩ
IPC313N10N3R
RDS(on) =1.9 mΩ
BSC027N10NS5
RDS(on) =2.7 mΩ
IPT020N10N3
RDS(on) =2.0 mΩ
2-4
IPC26N10NR
RDS(on) =3.2 mΩ
IRF7769L1TRPBF
RDS(on) =3.5 mΩ
BSC035N10NS5
RDS(on) =3.5 mΩ
IPC173N10N3
RDS(on) =3.6 mΩ
BSC040N10NS5
RDS(on) =4.0 mΩ
4-10
IRF100DM116 3)
RDS(on)=4.3 mΩ
BSC050N10N5
RDS(on) =5.0 mΩ
BSB056N10NN3 G
RDS(on) =5.6 mΩ
BSC060N10NS3 G
RDS(on) =6.0 mΩ
BSC070N10NS3 G
RDS(on) =7.0 mΩ
BSC070N10NS5
RDS(on) =7.0 mΩ
IRFH5010TRPBF
RDS(on) =9.0 mΩ
BSZ097N10NS5
RDS(on) =9.7 mΩ
BSC098N10NS5
RDS(on) =9.8 mΩ
10-25
BSC109N10NS3 G
RDS(on) =10.9 mΩ
BSC118N10NS G
RDS(on) =11.8 mΩ
BSF134N10NJ3 G 1)
RDS(on) =13.4 mΩ
IRFH7110TRPBF
RDS(on) =13.5 mΩ
IPC045N10N3
RDS(on)=15.2 mΩ
BSZ160N10NS3 G
RDS(on) =16.0 mΩ
BSC160N10NS3 G
RDS(on) =16.0 mΩ
IRF6662TRPBF
RDS(on) =22.0 mΩ
BSC196N10NS G
RDS(on) =19.6 mΩ
IRF7853TRPBF
RDS(on) =18.0 mΩ
>25
IRF6645TRPBF
RDS(on) =35.0 mΩ
BSZ440N10NS3 G
RDS(on) =44.0 mΩ
BSC252N10NSF G
RDS(on)=25.2 mΩ
IRF7665S2TRPBF
RDS(on) =62.0 mΩ
BSC440N10NS3 G
RDS(on) =44.0 mΩ
2 x 75 BSC750N10ND G
RDS(on) =75.0 mΩ; dual
2 x 195 IRFHM792TRPBF
RDS(on) =195.0 mΩ
OptiMOS™ and StrongIRFET™ 100V logic level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-220 Bare die
(RDS(on) typ.)
PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SOT-23
2-4 IRLS4030TRL7PP
RDS(on) =3.9 mΩ
BSC034N10LS5
RDS(on) =3.4 mΩ
4-10 IRLS4030TRLPBF
RDS(on) =4.3 mΩ
IRLB4030PBF
RDS(on) =4.3 mΩ
BSZ096N10LS5
RDS(on) =9.6 mΩ
10-25
IPP12CN10L G
RDS(on) =12.0 mΩ
IPC045N10L32)
RDS(on)= 16.0 mΩ
BSZ146N10LS5
RDS(on) =14.6 mΩ
BSC123N10LS G
RDS(on) =12.3 mΩ
IRLR3110ZTRPBF
RDS(on) =14.0 mΩ
BSZ150N10LS3
RDS(on) =15.0 mΩ
BSC146N10LS5
RDS(on) =14.6 mΩ
>25 IPC020N10L3 2)
RDS(on) =42.0 mΩ
IRL100HS121
RDS(on)=42.0 mΩ
BSC265N10LSF G
RDS(on) =26.5 mΩ
IRLML0100
RDS(on)=220 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
85
OptiMOS™ and StrongIRFET™ 120V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-262
(I2PAK)
TO-220 Bare die
(RDS(on) typ.)
PQFN 3.3 x 3.3 SuperSO8
2-4
IPC302N12N3
RDS(on) =2.5 mΩ
IPC26N12N
RDS(on) =3.0 mΩ
IPB038N12N3 G
RDS(on) =3.8 mΩ
IPB036N12N3 G
RDS(on) =3.6 mΩ
IPC26N12NR
RDS(on)=3.2 mΩ
4-10
IPI041N12N3 G
RDS(on) =4.1 mΩ
IPP041N12N3 G
RDS(on) =4.1 mΩ
IPP048N12N3 G
RDS(on) =4.8 mΩ
IPI076N12N3 G
RDS(on) =7.6 mΩ
IPP076N12N3 G
RDS(on) =7.6 mΩ
BSC077N12NS3 G
RDS(on) =7.7 mΩ
10-25
IPD110N12N3 G
RDS(on) =11.0 mΩ
IPP114N12N3 G
RDS(on) =11.4 mΩ
IPB144N12N3 G
RDS(on) =14.4 mΩ
IPI147N12N3 G
RDS(on) =14.7 mΩ
IPP147N12N3 G
RDS(on) =14.7 mΩ
BSZ240N12NS3 G
RDS(on) =24.0 mΩ
BSC190N12NS3 G
RDS(on) =19.0 mΩ
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
87
2) 220 V rated
3) In development
4) Part qualified according to AEC Q101
OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK+)
TO-262
(I2PAK)
TO-220 TO-247
4-10
IRF200P222
RDS(on)=6.6 mΩ
IRFP4668PBF
RDS(on) =9.7 mΩ
10-25
IPB107N20N3 G
RDS(on) =10.7 mΩ
IRF200S234
RDS(on)= 16.9 mΩ
IPI110N20N3 G
RDS(on) =11.0 mΩ
IPP110N20N3 G
RDS(on) =11.0 mΩ
IRF200P223
RDS(on)=11.5 mΩ
IPB107N20NA 4)
RDS(on) =10.7 mΩ
IPB110N20N3LF
RDS(on)=11.0 mΩ
IPP120N20NFD
RDS(on) =12.0 mΩ
IRFP4127PBF
RDS(on) =21.0 mΩ
IPB117N20NFD
RDS(on) =11.7 mΩ
IRFB4127PBF
RDS(on) =20.0 mΩ
IRFP4227PBF
RDS(on) =25.0 mΩ
IPB156N22NFD 2)
RDS(on) =15.6 mΩ
IRFS4127TRLPBF
RDS(on) =22.0 mΩ
>25
IRFS4227TRLPBF
RDS(on) =26.0 mΩ
IRFB4227PBF
RDS(on) =26.0 mΩ
IPD320N20N3 G
RDS(on) =32.0 mΩ
IPB320N20N3 G
RDS(on) =32.0 mΩ
IPI320N20N3 G
RDS(on) =32.0 mΩ
IPP320N20N3 G
RDS(on) =32.0 mΩ
IRFB4620PBF
RDS(on) =72.5 mΩ
IRFR4620TRLPBF
RDS(on) =78.0 mΩ
IRFS4620TRLPBF
RDS(on) =78.0 mΩ
IRFB5620PBF
RDS(on) =72.5 mΩ
IRFS4020TRLPBF
RDS(on) =105.0 mΩ
IRFB4020PBF
RDS(on) =100.0 mΩ
IRF200B211
RDS(on) =170.0 mΩ
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OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 TO-Leadless TO-247
4-10
IPC300N20N3
RDS(on) =9.2 mΩ
IRF200P222
RDS(on)= 6.6 mΩ
IPC302N20N3
RDS(on) =9.2 mΩ
10-25 IPC302N20NFD
RDS(on) = 9.4 mΩ
BSC220N20NSFD
RDS(on)=22.0 mΩ
IPT111N20NFD
RDS(on)=11.1 mΩ
IRF200P223
RDS(on)= 11.5 mΩ
>25
BSC320N20NS3 G
RDS(on) =32.0 mΩ
BSC350N20NSFD
RDS(on)=35.0 mΩ
BSC500N20NS3G
RDS(on) =50.0 mΩ
IRF6641TRPBF
RDS(on) =59.9 mΩ
IRFH5020
RDS(on) =55.0 mΩ
BSZ900N20NS3 G
RDS(on) =90.0 mΩ
BSC900N20NS3 G
RDS(on) =90.0 mΩ
IRF7820TRPBF
RDS(on) =78.0 mΩ
IRF6785TRPBF
RDS(on) =100.0 mΩ
BSZ12DN20NS3 G
RDS(on) =125.0 mΩ
BSC12DN20NS3 G
RDS(on) =125.0 mΩ
BSZ22DN20NS3 G
RDS(on) =225.0 mΩ
BSC22DN20NS3 G
RDS(on) =225.0 mΩ
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
86
87
2) 8 V rated (RDS(on) also specified @ VGS = 8 V)
3) In development
5) 135 V
OptiMOS™ and StrongIRFET™ 135-150 V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D²PAK 7-pin)
TO-263
(D²PAK 7-pin+)
TO-251/
TO-251 Short
Lead
(IPAK/IPAK
Short Lead)
TO-262
(I2PAK)
TO-220 TO-220
FullPAK
TO-247
4-10
IPB048N15N5
RDS(on)=4.8 mΩ
IPB044N15N5
RDS(on)=4.4 mΩ
IPI051N15N5
RDS(on)=5.1 mΩ
IPP051N15N5 2)
RDS(on)=5.1 mΩ
IRF150P220
RDS(on)=2.5mΩ
IPB048N15N5LF
RDS(on)=4.8 mΩ
IRF135SA204 5)
RDS(on) =5.9 mΩ
IRF135SA204
RDS(on)=5.9 mΩ
IRF150P221
RDS(on)=4.8mΩ
IPB072N15N3 G
RDS(on) =7.2 mΩ
IPB060N15N5
RDS(on)= 6.0 mΩ
IPI075N15N3 G
RDS(on) =7.5 mΩ
IPP075N15N3 G
RDS(on) =7.5 mΩ
IRFP4568PBF
RDS(on) =5.9 mΩ
IPB073N15N5
RDS(on)=7.3 mΩ
IPB065N15N3 G
RDS(on) =6.5 mΩ
IPI076N15N5
RDS(on)=7.6 mΩ
IPP076N15N5
RDS(on)=7.6 mΩ
IPA075N15N3 G
RDS(on) =7.5 mΩ
IPB083N15N5LF
RDS(on)=8.3 mΩ
IRF135S203 5)
RDS(on) =8.4 mΩ
IRF135B203 5)
RDS(on) =8.4 mΩ
10-25
IPB108N15N3 G
RDS(on) =10.8 mΩ
IRFS4115TRL7PP
RDS(on) =11.8 mΩ
IPI111N15N3 G
RDS(on) =11.1 mΩ
IPP111N15N3 G
RDS(on) =11.1 mΩ
IPA105N15N3 G
RDS(on) =10.5 mΩ
IRFS4321
RDS(on) =15.0 mΩ
IRFS4321TRL7PP
RDS(on) =14.7 mΩ
IRFB4321PBF
RDS(on) =15.0 mΩ
IRFP4321PBF
RDS(on) =15.5 mΩ
IPD200N15N3 G
RDS(on) =20.0 mΩ
IPB200N15N3 G
RDS(on) =20.0 mΩ
IPP200N15N3
G 2)
RDS(on) =20.0 mΩ
>25
IRFS4615PBF
RDS(on) =42.0 mΩ
IRFB4615PBF
RDS(on) =39.0 mΩ
IRFR4615
RDS(on) =42.0 mΩ
IRFS5615PBF
RDS(on) =42.0 mΩ
IRFU4615PBF
RDS(on) =42.0 mΩ
IRFB5615PBF
RDS(on) =39.0 mΩ
IPD530N15N3 G
RDS(on) =53.0 mΩ
IPB530N15N3 G
RDS(on) =53.0 mΩ
IPI530N15N3 G 2)
RDS(on) =53.0 mΩ
IPP530N15N3
G 2)
RDS(on) =53.0 mΩ
IRFB4019PBF
RDS(on) =95.0 mΩ
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OptiMOS™ and StrongIRFET™ 135-150 V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
4-10
IPC302N15N3
RDS(on) =4.9 mΩ
BSC093N15NS5
RDS(on) =9.3 mΩ
IPT059N15N3
RDS(on) = 5.9 mΩ
IPC300N15N3R
RDS(on) =4.9 mΩ
10-25
IRF7779L2TRPBF 5)
RDS(on) =11.0 mΩ
BSC110N15NS5
RDS(on) =11.0 mΩ
BSC160N15NS5
RDS(on) =16.0 mΩ
BSB165N15NZ3 G
RDS(on) =16.5 mΩ
BSC190N15NS3 G
RDS(on) =19.0 mΩ
>25
BSB280N15NZ3 G
RDS(on) =28.0 mΩ
BSZ300N15NS5
RDS(on) =30.0 mΩ
BSC360N15NS3 G
RDS(on) =36.0 mΩ
IRF6643TRPBF
RDS(on) =34.5 mΩ
BSZ520N15NS3 G
RDS(on) =52.0 mΩ
BSC520N15NS3 G
RDS(on) =52.0 mΩ
IRF6775MTRPBF
RDS(on) =56.0 mΩ
BSZ900N15NS3 G
RDS(on) =90.0 mΩ
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
87
2) 220 V rated
3) In development
4) Part qualified according to AEC Q101
OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-263
(D2PAK+)
TO-262
(I2PAK)
TO-220 TO-247
4-10
IRF200P222
RDS(on)=6.6 mΩ
IRFP4668PBF
RDS(on) =9.7 mΩ
10-25
IPB107N20N3 G
RDS(on) =10.7 mΩ
IRF200S234
RDS(on)= 16.9 mΩ
IPI110N20N3 G
RDS(on) =11.0 mΩ
IPP110N20N3 G
RDS(on) =11.0 mΩ
IRF200P223
RDS(on)=11.5 mΩ
IPB107N20NA 4)
RDS(on) =10.7 mΩ
IPB110N20N3LF
RDS(on)=11.0 mΩ
IPP120N20NFD
RDS(on) =12.0 mΩ
IRFP4127PBF
RDS(on) =21.0 mΩ
IPB117N20NFD
RDS(on) =11.7 mΩ
IRFB4127PBF
RDS(on) =20.0 mΩ
IRFP4227PBF
RDS(on) =25.0 mΩ
IPB156N22NFD 2)
RDS(on) =15.6 mΩ
IRFS4127TRLPBF
RDS(on) =22.0 mΩ
>25
IRFS4227TRLPBF
RDS(on) =26.0 mΩ
IRFB4227PBF
RDS(on) =26.0 mΩ
IPD320N20N3 G
RDS(on) =32.0 mΩ
IPB320N20N3 G
RDS(on) =32.0 mΩ
IPI320N20N3 G
RDS(on) =32.0 mΩ
IPP320N20N3 G
RDS(on) =32.0 mΩ
IRFB4620PBF
RDS(on) =72.5 mΩ
IRFR4620TRLPBF
RDS(on) =78.0 mΩ
IRFS4620TRLPBF
RDS(on) =78.0 mΩ
IRFB5620PBF
RDS(on) =72.5 mΩ
IRFS4020TRLPBF
RDS(on) =105.0 mΩ
IRFB4020PBF
RDS(on) =100.0 mΩ
IRF200B211
RDS(on) =170.0 mΩ
www.infineon.com/powermosfet-12V-300V
OptiMOS™ and StrongIRFET™ 200V normal level
RDS(on), max.
@VGS=10V
[mΩ]
Bare die
(RDS(on) typ.)
DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 TO-Leadless TO-247
4-10
IPC300N20N3
RDS(on) =9.2 mΩ
IRF200P222
RDS(on)= 6.6 mΩ
IPC302N20N3
RDS(on) =9.2 mΩ
10-25 IPC302N20NFD
RDS(on) = 9.4 mΩ
BSC220N20NSFD
RDS(on)=22.0 mΩ
IPT111N20NFD
RDS(on)=11.1 mΩ
IRF200P223
RDS(on)= 11.5 mΩ
>25
BSC320N20NS3 G
RDS(on) =32.0 mΩ
BSC350N20NSFD
RDS(on)=35.0 mΩ
BSC500N20NS3G
RDS(on) =50.0 mΩ
IRF6641TRPBF
RDS(on) =59.9 mΩ
IRFH5020
RDS(on) =55.0 mΩ
BSZ900N20NS3 G
RDS(on) =90.0 mΩ
BSC900N20NS3 G
RDS(on) =90.0 mΩ
IRF7820TRPBF
RDS(on) =78.0 mΩ
IRF6785TRPBF
RDS(on) =100.0 mΩ
BSZ12DN20NS3 G
RDS(on) =125.0 mΩ
BSC12DN20NS3 G
RDS(on) =125.0 mΩ
BSZ22DN20NS3 G
RDS(on) =225.0 mΩ
BSC22DN20NS3 G
RDS(on) =225.0 mΩ
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
89
All products are qualified to Automotive AEC Q101 (except the parts marked with *)
1) RDS(on) 4.5 V rated
Small signal P-channel
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
P-channel MOSFETs
-250
BSP317P
4 Ω, -0.43 A, LL
BSS192P
12 Ω, -0.19 A, LL
BSR92P
11 Ω, -0.14 A, LL
BSP92P
12 Ω, -0.26 A, LL
-100
BSP321P
900 mΩ, -0.98 A, NL
BSP322P
800 mΩ, -1.0 A, LL
BSP316P
1.8 Ω, -0.68 A, LL
BSR316P
1.8 Ω, -0.36 A, LL
-60
BSP612P
120 mΩ, 3 A, LL
ISS17EP06LM
1.7Ω, -0.3 A, LL
BSP613P
130 mΩ, 2.9 A, NL
BSS83P
2 Ω, -0.33 A, LL
BSS84PW
8 Ω, -0.15 A, LL
BSP170P
300 mΩ, -1.9 A, NL
ISS55EP06LM
5.5 Ω, -0.18 A, NL
BSP171P
300 mΩ, -1.9 A, LL
BSS84P
8 Ω, -0.17 A, LL
BSP315P
800 mΩ, -1.17 A, LL
ISP650P06NM
65 mΩ, -3.7 A, NL
BSR315P
800 mΩ, -0.62 A, LL
ISP12DP06NM
125 mΩ, -2.8, NL
ISP25DP06LM
250 mΩ, -1.9 A, LL
SP25DP06NM
250 mΩ, -1.9 A, NL
SP75DP06LM
750 mΩ, -1.1 A, LL
- 30
BSL303SPE
33 mΩ, -6.3 A, LL
BSS308PE
80 mΩ, -2.1 A, LL, ESD
BSD314SPE
140 mΩ, -1.5 A, LL, ESD
IRFTS9342TRPBF*
40 mΩ, -5.8 A, LL
BSS314PE
140 mΩ, -1.5 A,
LL, ESD
BSL307SP
43 mΩ, -5.5 A, LL
BSS315P
150 mΩ, -1.5 A, LL
BSL305SPE
45 mΩ, -5.5 A, LL
BSL308PE
80 mΩ, -2.1 A, LL, dual,
ESD
BSL314PE
140 mΩ, -1.5 A, LL,
ESD, dual
-20
BSL207SP
41 mΩ, -6 A, SLL
IRLML2244* 1)
54 mΩ, 4.3 A, LL
BSL211SP
67 mΩ, -4.7 A, SLL
IRLML2246* 1)
135 mΩ, 2.6 A, LL
BSS209PW
550 mΩ, -0.58 A, SLL
BSV236SP
175 mΩ, -1.5 A, SLL
BSS215P
150 mΩ, -1.5 A, SLL
BSS223PW
1.2 Ω, -0.39 A, SLL
BSD223P
1.2 Ω, -0.39 A, SLL, dual
Small signal complementary
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
Complementary
-20/20
BSL215C
N: 140 mΩ, 1.5 A, SLL
P: 150 mΩ, 1.5 A, SLL
BSD235C
N: 350 mΩ, 0.95 A, SLL
P: 1.2 Ω, 0.53 A, SLL
-30/30
BSL308C
N: 57 mΩ, 2.3 A, LL
P: 80 mΩ, -2.0 A, LL
BSL316C
N: 160 mΩ, 1.4 A, LL
P: 150 mΩ, -1.5 A, LL
www.infineon.com/smallsignal
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
88
89
OptiMOS™ and StrongIRFET™ 250V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-262
(I2PAK)
TO-220 TO-247 Bare die
(RDS(on) typ.)
PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
10-25
IPB200N25N3 G
RDS(on) =20.0 mΩ
IPI200N25N3 G
RDS(on) =20.0 mΩ
IPP200N25N3 G
RDS(on) =20.0 mΩ
IRF250P224
RDS(on)=12.0 mΩ
IPP220N25NFD
RDS(on) =22.0 mΩ
IRFP4768PBF
RDS(on) =17.5 mΩ
IPC302N25N3
RDS(on)=16.0 mΩ
IPT210N25NFD
RDS(on)=21.0 mΩ
IRF250P225
RDS(on)=22.0 mΩ
>25
BSC430N25NSFD
RDS(on)=43.0 mΩ
IRFS4229TRLPBF
RDS(on) =48.0 mΩ
IRFB4332PBF
RDS(on) =33.0 mΩ
IRFP4332PBF
RDS(on) =33.0 mΩ
BSC600N25NS3 G
RDS(on) =60.0 mΩ
BSC670N25NSFD
RDS(on)=67.0 mΩ
IPD600N25N3 G
RDS(on) =60.0 mΩ
IPB600N25N3 G
RDS(on) =60.0 mΩ
IPI600N25N3 G
RDS(on) =60.0 mΩ
IRFB4229PBF
RDS(on) =46.0 mΩ
IRFP4229PBF
RDS(on) =46.0 mΩ
BSZ16DN25NS3 G
RDS(on) =165.0 mΩ
IRFH5025
RDS(on) =100.0 mΩ
IPP600N25N3 G
RDS(on) =60.0 mΩ
IPC045N25N3
RDS(on) =146.0 mΩ
BSZ42DN25NS3 G
RDS(on) =425.0 mΩ
BSC16DN25NS3 G
RDS(on) =165.0 mΩ
OptiMOS™ and StrongIRFET™ 300V normal level
RDS(on), max.
@VGS=10V
[mΩ]
TO-263
(D2PAK)
TO-220 TO-247 SuperSO8
0-25 IRF300P226
RDS(on)=19.0 mΩ
>25
IPB407N30N
RDS(on) =40.7 mΩ
IPP410N30N
RDS(on) =41.0 mΩ
IRFP4868PBF
RDS(on) =32.0 mΩ
IRF300P227
RDS(on)=40.0 mΩ
IRFB4137PBF
RDS(on) =69.0 mΩ
IRFP4137PBF
RDS(on) =69.0 mΩ
BSC13DN30NSFD
RDS(on)=130.0 mΩ
www.infineon.com/powermosfet-12V-300V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
89
All products are qualified to Automotive AEC Q101 (except the parts marked with *)
1) RDS(on) 4.5 V rated
Small signal P-channel
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
P-channel MOSFETs
-250
BSP317P
4 Ω, -0.43 A, LL
BSS192P
12 Ω, -0.19 A, LL
BSR92P
11 Ω, -0.14 A, LL
BSP92P
12 Ω, -0.26 A, LL
-100
BSP321P
900 mΩ, -0.98 A, NL
BSP322P
800 mΩ, -1.0 A, LL
BSP316P
1.8 Ω, -0.68 A, LL
BSR316P
1.8 Ω, -0.36 A, LL
-60
BSP612P
120 mΩ, 3 A, LL
ISS17EP06LM
1.7Ω, -0.3 A, LL
BSP613P
130 mΩ, 2.9 A, NL
BSS83P
2 Ω, -0.33 A, LL
BSS84PW
8 Ω, -0.15 A, LL
BSP170P
300 mΩ, -1.9 A, NL
ISS55EP06LM
5.5 Ω, -0.18 A, NL
BSP171P
300 mΩ, -1.9 A, LL
BSS84P
8 Ω, -0.17 A, LL
BSP315P
800 mΩ, -1.17 A, LL
ISP650P06NM
65 mΩ, -3.7 A, NL
BSR315P
800 mΩ, -0.62 A, LL
ISP12DP06NM
125 mΩ, -2.8, NL
ISP25DP06LM
250 mΩ, -1.9 A, LL
SP25DP06NM
250 mΩ, -1.9 A, NL
SP75DP06LM
750 mΩ, -1.1 A, LL
- 30
BSL303SPE
33 mΩ, -6.3 A, LL
BSS308PE
80 mΩ, -2.1 A, LL, ESD
BSD314SPE
140 mΩ, -1.5 A, LL, ESD
IRFTS9342TRPBF*
40 mΩ, -5.8 A, LL
BSS314PE
140 mΩ, -1.5 A,
LL, ESD
BSL307SP
43 mΩ, -5.5 A, LL
BSS315P
150 mΩ, -1.5 A, LL
BSL305SPE
45 mΩ, -5.5 A, LL
BSL308PE
80 mΩ, -2.1 A, LL, dual,
ESD
BSL314PE
140 mΩ, -1.5 A, LL,
ESD, dual
-20
BSL207SP
41 mΩ, -6 A, SLL
IRLML2244* 1)
54 mΩ, 4.3 A, LL
BSL211SP
67 mΩ, -4.7 A, SLL
IRLML2246* 1)
135 mΩ, 2.6 A, LL
BSS209PW
550 mΩ, -0.58 A, SLL
BSV236SP
175 mΩ, -1.5 A, SLL
BSS215P
150 mΩ, -1.5 A, SLL
BSS223PW
1.2 Ω, -0.39 A, SLL
BSD223P
1.2 Ω, -0.39 A, SLL, dual
Small signal complementary
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
Complementary
-20/20
BSL215C
N: 140 mΩ, 1.5 A, SLL
P: 150 mΩ, 1.5 A, SLL
BSD235C
N: 350 mΩ, 0.95 A, SLL
P: 1.2 Ω, 0.53 A, SLL
-30/30
BSL308C
N: 57 mΩ, 2.3 A, LL
P: 80 mΩ, -2.0 A, LL
BSL316C
N: 160 mΩ, 1.4 A, LL
P: 150 mΩ, -1.5 A, LL
www.infineon.com/smallsignal
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
91
1) 5-leg
2) 2.5 VGS capable
* Products are qualified to Automotive AEC Q101
**RDS(on) specified at 4.5 V
*** RDS(on) max. @ VGS=4.5 V
Power P-channel MOSFETs
Voltage
[V]
TO-252
(DPAK)
DirectFET™ SOT-23 PQFN 3.3 x 3.3 SuperSO8 SO-8 PQFN 2 x 2 TSOP-6
P-channel MOSFETs
-20
BSO201SP H
RDS(on) =7.0 mΩ
BSO203SP H
RDS(on) =21.0 mΩ
BSO203P H
RDS(on) =21.0 mΩ
IRLHS2242TRPBF**
RDS(on) =31.0 mΩ
IRLTS2242
RDS(on)=39 mΩ
IRLML2244 2) ***
RDS(on)=54 mΩ
BSO207P H
RDS(on) =45.0 mΩ
IRLML2246 2) ***
RDS(on)=135 mΩ
BSO211P H
RDS(on) =67.0 mΩ
-30
BSC030P03NS3 G
RDS(on) =3.0 mΩ
IRF9310
RDS(on)=4.6 mΩ
IPD042P03L3 G
RDS(on) =4.2 mΩ
BSC060P03NS3E G
RDS(on) =6.0 mΩ; ESD
IRF9317
RDS(on)=6.6 mΩ
BSZ086P03NS3 G
RDS(on) =8.6 mΩ
IRF9321
RDS(on)=7.2 mΩ
SPD50P03L G 1)*
RDS(on) =7.0 mΩ
IRF9395M
RDS(on)=7.0 mΩ; dual
BSZ086P03NS3E G
RDS(on) =8.6 mΩ
BSO080P03NS 3 G
RDS(on) =8.0 mΩ
BSC084P03NS3 G
RDS(on) =8.4 mΩ
BSO080P03NS3E G
RDS(on) =8.0 mΩ; ESD
BSC084P03NS3E G
RDS(on) =8.4 mΩ; ESD
BSO080P03S H
RDS(on) =8.0 mΩ
BSZ120P03NS3 G
RDS(on) =12.0 mΩ
BSO301SP H
RDS(on) =8.0 mΩ
BSZ120P03NS3E G
RDS(on) =12.0 mΩ; ESD
IRF9328
RDS(on)=11.9 mΩ
IRF9388TRPBF
RDS(on)=11.9 mΩ
BSO130P03S H
RDS(on) =13.0 mΩ
IRF9358
RDS(on)=16 mΩ; dual
IRFHM9331
2)
RDS(on)=15 mΩ
IRF9332
RDS(on)=17.5 mΩ
IRF9392TRPBF
RDS(on)= 17.5 mΩ
BSZ180P03NS3 G
RDS(on) =18.0 mΩ
IRF9333
RDS(on)=19.4 mΩ
BSZ180P03NS3E G
RDS(on) =18.0 mΩ; ESD
BSO200P03S H
RDS(on) =20.0 mΩ
BSO303SP H
RDS(on) =21.0 mΩ
IRFH9301TRPBF
RDS(on) =37.0 mΩ
IRLML9301TRPBF
RDS(on)=64 mΩ
BSO303P H
RDS(on) =21.0 mΩ; dual
IRLML9303TRPBF
RDS(on)=165 mΩ
IRF9362
RDS(on)=21 mΩ; dual
IRFHS9351TRPBF
RDS(on) =170.0 mΩ; dual
IRFTS9342***
RDS(on)=32 mΩ
IRF9335
RDS(on)=59 mΩ
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Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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91
Small signal N-channel
Voltage
[V]
SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
N-channel
20
BSL802SN
22 mΩ, 7.5 A, ULL
BSR802N
23 mΩ, 3.7 A, ULL
IRLML6244* 1)
21 mΩ, 6.3 A, LL
BSL202SN
22 mΩ, 7.5 A, SLL
BSR202N
21 mΩ, 3.8 A, SLL
IRLML6246* 1)
46 mΩ, 4.1 A, LL
BSL205N
50 mΩ, 2.5 A, SLL, dual
BSS205N
50 mΩ, 2.5 A, SLL
BSD214SN
140 mΩ, 1.5 A, SLL
BSS806NE
57 mΩ, 2.3 A, ULL, ESD
BSD816SN
160 mΩ, 1.4 A, ULL
BSL207N
70 mΩ, 2.1 A, SLL, dual
BSS806N
57 mΩ, 2.3 A, ULL
BSS214NW
140 mΩ, 1.5 A, SLL
BSD235N
350 mΩ, 0.95 A, SLL, dual
BSL214N
140 mΩ, 1.5 A, SLL, dual
BSS214N
140 mΩ, 1.5 A, SLL
BSS816NW
160 mΩ, 1.4 A, ULL
BSD840N
400 mΩ, 0.88 A, ULL, dual
25 IRFML8244*
24 mΩ, 5.8 A, NL
30
IRLTS6342* 1)
17.5 mΩ, 8.3 A, LL
BSR302N
23 mΩ, 3.7 A, LL
IRLML0030*
27 mΩ, 5.3 A, LL
BSD316SN
160 mΩ, 1.4A, LL
IRFTS8342*
19 mΩ. 8.2 A, NL
IRLML6344* 1)
29 mΩ, 5.0 A, LL
BSL302SN
25 mΩ, 7.1 A, LL
BSS306N
57 mΩ, 2.3 A, LL
BSL306N
57 mΩ, 2.3 A, LL, dual
IRLML6346* 1)
63 mΩ, 3.4 A, LL
IRLML2030*
100 mΩ, 1.4 A, LL
BSS316N
160 mΩ, 1.4 A, LL
55 BSS670S2L
650 mΩ, 0.54 A, LL
BSS340NW
400 mΩ, 0.88 A, LL
60
BSP318S
90 mΩ, 2.6 A, LL
BSL606SN
60 mΩ, 4.5 A, LL
BSS606N
60 mΩ, 3.2 A, LL
BSR606N
60 mΩ, 2.3 A, LL
IRLML0060*
92 mΩ, 2.7 A, LL
BSS138W
3.5 Ω, 0.28 A, LL
2N7002DW
3 Ω, 0.3 A, LL, dual
BSP320S
120 mΩ, 2.9 A, NL
IRLML2060*
480 mΩ, 1.2 A, LL
SN7002W
5 Ω, 0.23 A, LL
BSP295
300 mΩ, 1.8 A, LL
BSS138N
3.5 Ω, 0.23 A, LL
BSS7728N
5 Ω, 0.2 A, LL
SN7002N
5 Ω, 0.2 A, LL
2N7002
3 Ω, 0.3 A, LL
BSS159N
8 Ω, 0.13 A, depl.
75 BSP716N
160 mΩ, 2.3 A, LL
BSL716SN
150 mΩ, 2.5 A, LL
80
100
BSP372N
230 mΩ, 1.8 A, LL
BSL372SN
220 mΩ, 2.0 A, LL
IRLML0100*
220 mΩ, 1.6 A, LL
BSP373N
240 mΩ, 1.8 A, NL
BSL373SN
230 mΩ, 2.0 A, NL
BSS119N
6 Ω, 0.19 A, LL
VGS(th) 1.8 V to 2.3 V
BSP296N
600 mΩ, 1.2 A, LL
BSL296SN
460 mΩ, 1.4 A, LL
BSS123N
6 Ω, 0.19 A, LL
VGS(th) 0.8 V to 1.8 V
BSS169
12 Ω, 0.09 A, depl.
200
BSP297
1.8 Ω, 0.66 A, LL
BSP149
3.5 Ω,0.14 A, depl.
240
BSP88
6 Ω, 0.35 A, 2.8 V rated
BSS87
6 Ω, 0.26 A, LL
BSS131
14 Ω, 0.1 A, LL
BSP89
6 Ω, 0.35 A, LL
BSP129
6 Ω, 0.05 A, depl.
250 BSS139
30 Ω, 0.03 A, depl.
400
BSP298
3 Ω, 0.5 A, NL
BSP179
24 Ω, 0.04 A, depl.
BSP324
25 Ω, 0.17 A, LL
500 BSP299
4 Ω, 0.4 A, NL
600
BSP125
45 Ω, 0.12 A, LL
BSS225
45 Ω, 0.09 A, LL
BSS127
500 Ω, 0.023 A, LL
BSP135
60 Ω, 0.02 A, depl.
BSS126
700 Ω, 0.007 A, depl.
800
BSP300
20 Ω, 0.19 A, NL
All products are qualified to Automotive AEC Q101 (except 2N7002) (except the parts marked with *)
1) RDS(on) specified at 4.5 V
www.infineon.com/smallsignal
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
91
1) 5-leg
2) 2.5 VGS capable
* Products are qualified to Automotive AEC Q101
**RDS(on) specified at 4.5 V
*** RDS(on) max. @ VGS=4.5 V
Power P-channel MOSFETs
Voltage
[V]
TO-252
(DPAK)
DirectFET™ SOT-23 PQFN 3.3 x 3.3 SuperSO8 SO-8 PQFN 2 x 2 TSOP-6
P-channel MOSFETs
-20
BSO201SP H
RDS(on) =7.0 mΩ
BSO203SP H
RDS(on) =21.0 mΩ
BSO203P H
RDS(on) =21.0 mΩ
IRLHS2242TRPBF**
RDS(on) =31.0 mΩ
IRLTS2242
RDS(on)=39 mΩ
IRLML2244 2) ***
RDS(on)=54 mΩ
BSO207P H
RDS(on) =45.0 mΩ
IRLML2246 2) ***
RDS(on)=135 mΩ
BSO211P H
RDS(on) =67.0 mΩ
-30
BSC030P03NS3 G
RDS(on) =3.0 mΩ
IRF9310
RDS(on)=4.6 mΩ
IPD042P03L3 G
RDS(on) =4.2 mΩ
BSC060P03NS3E G
RDS(on) =6.0 mΩ; ESD
IRF9317
RDS(on)=6.6 mΩ
BSZ086P03NS3 G
RDS(on) =8.6 mΩ
IRF9321
RDS(on)=7.2 mΩ
SPD50P03L G 1)*
RDS(on) =7.0 mΩ
IRF9395M
RDS(on)=7.0 mΩ; dual
BSZ086P03NS3E G
RDS(on) =8.6 mΩ
BSO080P03NS 3 G
RDS(on) =8.0 mΩ
BSC084P03NS3 G
RDS(on) =8.4 mΩ
BSO080P03NS3E G
RDS(on) =8.0 mΩ; ESD
BSC084P03NS3E G
RDS(on) =8.4 mΩ; ESD
BSO080P03S H
RDS(on) =8.0 mΩ
BSZ120P03NS3 G
RDS(on) =12.0 mΩ
BSO301SP H
RDS(on) =8.0 mΩ
BSZ120P03NS3E G
RDS(on) =12.0 mΩ; ESD
IRF9328
RDS(on)=11.9 mΩ
IRF9388TRPBF
RDS(on)=11.9 mΩ
BSO130P03S H
RDS(on) =13.0 mΩ
IRF9358
RDS(on)=16 mΩ; dual
IRFHM9331
2)
RDS(on)=15 mΩ
IRF9332
RDS(on)=17.5 mΩ
IRF9392TRPBF
RDS(on)= 17.5 mΩ
BSZ180P03NS3 G
RDS(on) =18.0 mΩ
IRF9333
RDS(on)=19.4 mΩ
BSZ180P03NS3E G
RDS(on) =18.0 mΩ; ESD
BSO200P03S H
RDS(on) =20.0 mΩ
BSO303SP H
RDS(on) =21.0 mΩ
IRFH9301TRPBF
RDS(on) =37.0 mΩ
IRLML9301TRPBF
RDS(on)=64 mΩ
BSO303P H
RDS(on) =21.0 mΩ; dual
IRLML9303TRPBF
RDS(on)=165 mΩ
IRF9362
RDS(on)=21 mΩ; dual
IRFHS9351TRPBF
RDS(on) =170.0 mΩ; dual
IRFTS9342***
RDS(on)=32 mΩ
IRF9335
RDS(on)=59 mΩ
www.infineon.com/pchannel
Product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
93
Nomenclature
OptiMOS™
L
BSC 014 NG
S
03
R
DS(on) [mΩ]
Divide by 10 to get
RDS(on)
value e.g. 014 = 1.4 mΩ
However, if the sixth character
is a C, the fourth and the fifth
character indicate the
RDS(on)
e.g. 12C = 12 mΩ
For chip products chip area
in mm
2 multiplied by 10
Breakdown voltage [V]
Multiply by 10 to get
voltage class e.g. 03 = 30
V
E
= Extended, +5 V, e.g. E2 = 25 V
N
= N-channel
P
= P-channel
C
= Complementary
RoHS compliant
Level
N = Normal level (NL) 10.0
M = Logic level 5 V opt. (LL) 4.5
L = Logic level (ELL) 4.5
K = Super logic level (SLL) 2.5
J = Ultra logic level (ULL) 1.8
Package options
SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2
S = Single chip
D = Dual chip
DirectFET™
X = MX footprint
N = MN footprint
Z = MZ footprint
Q = SQ footprint
T = ST footprint
H = SH footprint
J = SJ footprint
3 = Technology generation
I = Monolithically integrated
Schottky-like diode
FD = Fast diode
LF = Linear mode capability
XE
Features
F = Fast switching
R = Integrated gate
resistor
E = ESD protection
A = Qualified according to AEC Q101
to be used from V
GS
Package type
BSB = DirectFET™
(M Can)
BSC = SuperSO8
BSF = DirectFET™
(S Can)
BSK = PQFN 2 x 2
BSO = SO-8
BSZ = PQFN 3.3 x 3.3
IPA = FullPAK
SPB/IPB = D2PAK
IPC = Chip product
SPD/IPD = DPAK
IPI = I2PAK
SPP/IPP = TO-220
IPS = IPAK Short Leads
IPT = TO-Leadless
OptiMOS™ 30V
P
ackage type
Consecutive number
without any c
orrelation
to
product specification
Channels
N
= N-channel
P
= P-channel
D = Dual
E = ESD
S = Single
I = Monolithically
integrated
Schottky-lik
e diode
BSC 0901 N X I
OptiMOS™ nomenclature
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
92
93
Power MOSFETs complementary
Voltage
[V]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 PQFN 3.3 x 3.3 SuperSO8 SO-8
Complementary
-20/20 >50 mΩ
BSZ15DC02KD H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
BSZ215C H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
-60/60 11-30 Ω
BSO612CV G*
N: 0.12 Ω, 3.0 A
P: 0.30 Ω, -2.0 A
BSO615C G*
N: 0.11 Ω, 3.1 A
P: 0.30 Ω, -2.0 A
*Products are qualified to Automotive AEC Q101
**RDS(on) specified at 4.5 V
www.infineon.com/complementary
Power P-channel MOSFETs
Voltage
[V]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 PQFN 3.3 x 3.3 SuperSO8 SO-8
P-channel MOSFETs
-60
IPD380P06NM
RDS(on)= 38 mΩ
IPB110P06LM
RDS(on)= 11 mΩ
SPP80P06P H*
RDS(on) =23.0 mΩ
IPD650P06NM
RDS(on)= 65 mΩ
SPB80P06P G*
RDS(on) =23.0 mΩ
SPD30P06P G*
RDS(on) =75.0 mΩ
IPD900P06NM
RDS(on) = 90 mΩ
SPD18P06P G*
RDS(on) =130.0 mΩ
SPB18P06P G*
RDS(on) =130.0 mΩ
SPP18P06P H*
RDS(on) =130.0 mΩ
BSO613SPV G*
RDS(on) =130.0 mΩ
SPD09P06PL G*
RDS(on) =250.0 mΩ
IPD25DP06LM
RDS(on) = 250 mΩ
IPD25DP06NM
RDS(on) = 250 mΩ
SPD08P06P G*
RDS(on) =300.0 mΩ
SPB08P06P G*
RDS(on) =300.0 mΩ
SPP08P06P H*
RDS(on) =300.0 mΩ
IPD40DP06NM
RDS(on) = 400 mΩ
-100
SPD15P10PL G*
RDS(on) =200.0 mΩ
SPP15P10PL H*
RDS(on) =200.0 mΩ
SPD15P10P G*
RDS(on) =240.0 mΩ
SPP15P10P H*
RDS(on) =240.0 mΩ
SPD04P10PL G*
RDS(on) =850.0 mΩ
SPD04P10P G*
RDS(on) =1000.0 mΩ
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
93
Nomenclature
OptiMOS™
L
BSC 014 NG
S
03
R
DS(on) [mΩ]
Divide by 10 to get
RDS(on)
value e.g. 014 = 1.4 mΩ
However, if the sixth character
is a C, the fourth and the fifth
character indicate the
RDS(on)
e.g. 12C = 12 mΩ
For chip products chip area
in mm
2 multiplied by 10
Breakdown voltage [V]
Multiply by 10 to get
voltage class e.g. 03 = 30
V
E
= Extended, +5 V, e.g. E2 = 25 V
N
= N-channel
P
= P-channel
C
= Complementary
RoHS compliant
Level
N = Normal level (NL) 10.0
M = Logic level 5 V opt. (LL) 4.5
L = Logic level (ELL) 4.5
K = Super logic level (SLL) 2.5
J = Ultra logic level (ULL) 1.8
Package options
SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2
S = Single chip
D = Dual chip
DirectFET™
X = MX footprint
N = MN footprint
Z = MZ footprint
Q = SQ footprint
T = ST footprint
H = SH footprint
J = SJ footprint
3 = Technology generation
I = Monolithically integrated
Schottky-like diode
FD = Fast diode
LF = Linear mode capability
XE
Features
F = Fast switching
R = Integrated gate
resistor
E = ESD protection
A = Qualified according to AEC Q101
to be used from V
GS
Package type
BSB = DirectFET™
(M Can)
BSC = SuperSO8
BSF = DirectFET™
(S Can)
BSK = PQFN 2 x 2
BSO = SO-8
BSZ = PQFN 3.3 x 3.3
IPA = FullPAK
SPB/IPB = D2PAK
IPC = Chip product
SPD/IPD = DPAK
IPI = I2PAK
SPP/IPP = TO-220
IPS = IPAK Short Leads
IPT = TO-Leadless
OptiMOS™ 30V
P
ackage type
Consecutive number
without any c
orrelation
to
product specification
Channels
N
= N-channel
P
= P-channel
D = Dual
E = ESD
S = Single
I = Monolithically
integrated
Schottky-lik
e diode
BSC 0901 N X I
OptiMOS™ nomenclature
Further information, data sheets and documents
www.infineon.com/powermosfet-12V-300V
www.infineon.com/smallsignal
www.infineon.com/pchannel
www.infineon.com/depletion
www.infineon.com/complementary
www.infineon.com/baredie
Evaluation boards and simulation models
www.infineon.com/to-leadless-evaluationboard
www.infineon.com/powermosfet-simulationmodels
Videos
www.infineon.com/mediacenter
Infineon support for low voltage MOSFETs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Low voltage MOSFETs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
94
StrongIRFET™ nomenclature
StrongIRFET™ (from May 2015 onwards)
Drive volt
age
F
= 4.5 VGS capable for BV ≤ 30 V
L
= 2.5 VGS capable for BV ≤ 30 V, 4.5 VGS capable for BV ≥ 40 V
2
to 3 digit voltage
F
or example:
25
= 25 V
135
= 135 V
Package
1 or 2 letters
B = TO-220
BA = Super220
C = Bare die or wafer
DL = DirectFET™ 1.5 Large Can
DM = DirectFET™ 1.5 Medium Can
Can DS = DirectFET
™ 1.5 Small Can
Can FF = TO-220 FullPAK
H = PQFN 5 x 6
HB = Power Block 5 x 6
HM = PQFN 3.0 x 3.0 or 3.3 x 3.3
HS = PQFN 2 x 2
I = TO-220 FullPAK
K = SO-8
L = SOT-223
ML = SOT-23
P = TO-247
PS = Super247
R = DPAK
S = D2PAK
SL = TO-262
SA = D2 7-pin with pin 2 void
SN = D2 7-pin with pins void
SC = D2 7-pin with pin 4 void
T = TollFET
TS = TSOP-6
U = IPAK
3 sequential digits
3 digits issued sequentially
IR F135 SA 204
Small signal
“X” indicates the packag
e
D
= SOT-363
P
= SOT-223
R
= SC59
S
= SOT-89, SOT-23, SOT-323
L
= TSOP-6
3 digits product identifier
me
aning dependent on
product g
eneration
Only present in following case
S
= Single (only for packages which
are also used for multichip products)
Polarity
N = N-channel
P = P-channel
C = Complementary
(N-ch + P-ch)
Only present in following case
W =
to distinguish SOT-323 from SOT
-23
Additional features
E = ESD protected MOSFET
BSX J1YJ
2Z
Further information, data sheets and documents
www.infineon.com/powermosfet-12V-300V
www.infineon.com/smallsignal
www.infineon.com/pchannel
www.infineon.com/depletion
www.infineon.com/complementary
www.infineon.com/baredie
Evaluation boards and simulation models
www.infineon.com/to-leadless-evaluationboard
www.infineon.com/powermosfet-simulationmodels
Videos
www.infineon.com/mediacenter
Infineon support for low voltage MOSFETs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Low voltage MOSFETs support
950 V CoolMOS™ P7 SJ MOSFET
Perfect fit for PFC and flyback topologies
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7
technology focuses on the low-power SMPS market. This new P7 family addresses applications ranging from lighting,
smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. Oering 50 V more
blocking voltage than its predecessor 900 V CoolMOS™ C3, the new 950 V CoolMOS™ P7 series delivers outstanding
performance in terms of eiciency, thermal behavior and ease of use. As the all other P7 family members, the 950 V
CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves
ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is
developed with best-in-class threshold voltage (VGS(th)) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to
drive and design-in.
Compared to competition, the 950 V CoolMOS™ P7 delivers best-in-class eiciency and thermal performance. Plug-and-play
at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent eiciency gains
of up to 0.2 % and lower MOSFET temperature of up to 5.2°C compared to similar competitor technology. With over
20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOS™ P7 with best-in-class DPAK
on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 mΩ - more than 60% lower RDS(on) compared to the
nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM and assembly cost.
www.infineon.com/950v-p7
Charger
Best-in-class DPAK RDS(on)
Customer benefits:
› Possible change from leaded to SMD packages
› High power density
› Lower BOM cost
› Less production cost
1400
1200
1000
800
600
400
200
0
1250 mΩ 1200 mΩ
450 mΩ
Competitor CoolMOS™ C3 CoolMOS™ P7
R
DS(on)
[mΩ]
-65%
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Pout [W]
Relative eiciency @ 90 VAC (ref: IPA95R450P7)
Eiciency [%]
65
60
55
50
45
40
35
30
25 5 10 15 20 25 30 35 40
5 10 15 20 25 30 35 40
Pout [W]
Temperature @ 90 VAC
Temperature [°C]
Δ 5.2°C
Δ 0.2%
IPA95R450P7 IPA90R500C3 Competitor IPA95R450P7 IPA90R500C3 Competitor
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
97
950 V CoolMOS™ P7 SJ MOSFET
CoolMOS™ SJ MOSFETs
Trusted leader in high voltage MOSFETs
The revolutionary CoolMOS™ power MOSFET family sets new standards in the field of energy eiciency. Our CoolMOS™
products oer a significant reduction of conduction, switching and driving losses, and enable high power density as
well as eiciency for superior power conversion systems.
600 V P6
600 V CE
650/700 V CE
800 V C3
800 V CE
900 V C3
500 V CE
600 V P7
700 V P7 1)
800 V P7 1)
950 V P7 1)
650 V CFD2
600 V CPA
600 V P6
800 V C3A
650 V CFDA
600 V CFD7
600 V P7
600/650 V C7
600/650 V G7
Optimized for flyback topologies Price-performance Highest performance Fast recovery diode Automotive
TimeTime
CoolMOS™ superjunction MOSFETs for industrial applications (>250 W) and automotiv
CoolMOS™ superjunction MOSFETs for for consumer applications (<400 W)
500/600 V CP
Not for new design
600/650 V C6/E6
500/600/650 V C3
600 V CFD
600/650 V C6/E6
500/600/650 V C3
ActiveNot for new design Active and preferred Active Active and preferred
High voltage superjunction MOSFETs address consumer applications, such as smartphone/tablet chargers, notebook
adapters, LED lighting, PC power, as well as audio and TV power supplies. Customers are increasingly replacing
standard MOSFETs with superjunction MOSFETs to benefit from higher eiciency and lower power consumption for
end users. CoolMOS™ P7 sets a new benchmark by oering high performance and competitive price all at once.
Also for industrial applications such as server, telecom, PC power, solar, UPS, EV-charging and others, Infineon’s latest
CoolMOS™7 superjunction MOSFETs with C7, G7, CFD7 and P7 product families oer what you need - from highest
eiciency to best price performance. Infineon has meanwhile also complemented the portfolio with first CoolGaN™
e-mode HEMTs products to further optimize eiciency and system cost.
Infineon’s CoolMOS™ superjunction MOSFET oering is complemented by the automotive qualified series 600 V CPA,
650 V CFDA and 800 V C3A. Gain your momentum in the rapidly growing on-board charger and DC-DC converter
markets with our excellent performing automotive series with proven outstanding quality standards that go well
beyond AEC Q101.
www.infineon.com/coolmos
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
96
97
CoolMOS™
950 V CoolMOS™ P7 SJ MOSFET
Perfect fit for PFC and flyback topologies
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7
technology focuses on the low-power SMPS market. This new P7 family addresses applications ranging from lighting,
smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. Oering 50 V more
blocking voltage than its predecessor 900 V CoolMOS™ C3, the new 950 V CoolMOS™ P7 series delivers outstanding
performance in terms of eiciency, thermal behavior and ease of use. As the all other P7 family members, the 950 V
CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves
ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is
developed with best-in-class threshold voltage (VGS(th)) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to
drive and design-in.
Compared to competition, the 950 V CoolMOS™ P7 delivers best-in-class eiciency and thermal performance. Plug-and-play
at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent eiciency gains
of up to 0.2 % and lower MOSFET temperature of up to 5.2°C compared to similar competitor technology. With over
20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOS™ P7 with best-in-class DPAK
on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 mΩ - more than 60% lower RDS(on) compared to the
nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM and assembly cost.
www.infineon.com/950v-p7
Charger
Best-in-class DPAK RDS(on)
Customer benefits:
› Possible change from leaded to SMD packages
› High power density
› Lower BOM cost
› Less production cost
1400
1200
1000
800
600
400
200
0
1250 mΩ 1200 mΩ
450 mΩ
Competitor CoolMOS™ C3 CoolMOS™ P7
R
DS(on)
[mΩ]
-65%
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
Pout [W]
Relative eiciency @ 90 VAC (ref: IPA95R450P7)
Eiciency [%]
65
60
55
50
45
40
35
30
25 5 10 15 20 25 30 35 40
5 10 15 20 25 30 35 40
Pout [W]
Temperature @ 90 VAC
Temperature [°C]
Δ 5.2°C
Δ 0.2%
IPA95R450P7 IPA90R500C3 Competitor IPA95R450P7 IPA90R500C3 Competitor
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
97
950 V CoolMOS™ P7 SJ MOSFET
700 V CoolMOS™ P7 SJ MOSFET
Our answer for flyback topologies
The 700 V CoolMOS™ P7 family has been developed to serve today’s and, especially, tomorrow’s trends in flyback
topologies. The family products address the low power SMPS market, mainly focusing on mobile phone chargers and
notebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment
(TV, game consoles or audio), and auxiliary power supplies. 700 V CoolMOS™ P7 achieves outstanding eiciency gains
of up to 4 percent and a decrease in device temperature of up to 16 K compared to competition. In contrast with the
previous 650 V CoolMOS™ C6 technology, 700 V CoolMOS™ P7 oers 2.4 percent gain in eiciency and 12 K lower device
temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed.
Keeping the ease of use in mind, Infineon has launched
the technology with a low threshold voltage (VGS(th)) of
3 V and a very narrow tolerance of ±0.5 V. This makes the
CoolMOS™ P7 easy to design-in and enables the usage
of lower gate source voltage, which facilitates its driving
and leads to lower idle losses. To increase the ESD
ruggedness up to HBM class 2 level, 700 V CoolMOS™ P7
has an integrated Zener diode. This helps to support
increased assembly yield, leads to reduction of
production related failures and, finally, manufacturing
cost savings on customer side.
Key features
› Highly performant technology
– Low switching losses (Eoss)
– Highly eicient
– Excellent thermal behavior
› Allowing high speed switching
› Integrated protection Zener diode
› Optimized VGS(th) of 3 V with very narrow tolerance of ±0.5 V
› Finely graduated portfolio
Key benefits
› Cost competitive technology
› Further eiciency gain at higher switching speed
› Supporting less magnetic size with lower BOM costs
› High ESD ruggedness up to HBM class 2 level
› Easy to drive and design-in
› Enabler for smaller form factors and high power
density designs
› Excellent choice in selecting the best fitting product
www.infineon.com/700V-p7
Charger
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
3.5
-4.0
-4.5
0.5 1.0 1.5 2.0 2.5
I
out
[A]
CoolMOS™ P7
Relative eiciency
@ 230 V
AC
; T
amb
=25°C
△ 4%
Relative temperature
@ 230 V
AC
; T
amb
=25°C, 30 min burn-in
△
Eiciency [%]
△
Temp [K]
13
16
5
18
16
14
12
10
8
6
4
2
0
CoolMOS™ C6
Competitor 1 Competitor 2
CoolMOS™ P7 CoolMOS™ C6
Competitor 1 Competitor 2
△ 1.5%
△ 16 K
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
CoolMOS™ P7 Comp. 1
Gate threshold voltage and tolerance
V
GSth
typ. [V]
Comp. 2 Comp. 3 Comp. 4 Comp. 5 Comp. 6
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
99
700 V CoolMOS™ P7 SJ MOSFET
800 V CoolMOS™ P7 SJ MOSFET
A benchmark in eiciency and thermal performance
With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines
best-in-class performance with the remarkable ease of use. This new product family is a perfect fit for flyback-based
consumer and industrial SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as
solar applications, fully covering the market needs in terms of its price/performance ratio.
The technology oers fully optimized key parameters to deliver best-in-class eiciency as well as thermal performance.
As demonstrated on an 80 W LED driver, bought on the market, the >45 percent reduction in switching losses (Eoss)
and output capacitance (Coss) as well as the significant improvement in input capacitance (Ciss) and gate charge (QG),
compared to competitor technologies, lead to 0.5 percent higher eiciency at light load which helps to reduce standby
power in the end application. At full load, the observed improvement is up to 0.3 percent higher eiciency and 6°C
lower device temperature.
EMI is a system level topic, and the optimization needs to be done on the system level only. Nevertheless, a pure
plug-and-play measurement on Infineon's 45 W adapter reveals that 800 V CoolMOS™ P7 shows similar EMI
performance to Infineon’s previous technologies as well as to competitors’ technologies.
Compared to competition, the 800 V CoolMOS™ P7 technology allows to integrate much lower RDS(on) values into small
packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels.
The complete P7 platform has been developed with an integrated Zener diode that is used as an electrostatic discharge (ESD)
protection mechanism, which increases the overall device ruggedness up to Human body model (HBM) class 2 level.
www.infineon.com/800V-p7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 10 20 30 40 50 60 70 80 90
Plug and play in an 80 W LED driver from market
Pout [W]
Relative eiciency [%]
CoolMOS™ P7
0.5%
0.3%
CoolMOS™ C3 Competitor 1 Competitor
2
60
50
40
30
20
10
0
30
CoolMOS™ C3
300
Frequency [MHz]
800 V CoolMOS™ exceptional EMI performance
CoolMOS™ P7 Competitor 1 Competitor 2
CoolMOS™ P7 sets a new benchmark
in best-in-class DPAK RDS(on)
Customer benefits:
› High power density
› Lower BOM cost
› Less production cost
850 mΩ
Competitor 2
630 mΩ
Competitor 1
280 mΩ
CoolMOS™ P7
360 mΩ
CoolMOS™ P7
450 mΩ
CoolMOS™ P7
-56
%
Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFET
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
98
99
800 V CoolMOS™ P7 SJ MOSFET
700 V CoolMOS™ P7 SJ MOSFET
Our answer for flyback topologies
The 700 V CoolMOS™ P7 family has been developed to serve today’s and, especially, tomorrow’s trends in flyback
topologies. The family products address the low power SMPS market, mainly focusing on mobile phone chargers and
notebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment
(TV, game consoles or audio), and auxiliary power supplies. 700 V CoolMOS™ P7 achieves outstanding eiciency gains
of up to 4 percent and a decrease in device temperature of up to 16 K compared to competition. In contrast with the
previous 650 V CoolMOS™ C6 technology, 700 V CoolMOS™ P7 oers 2.4 percent gain in eiciency and 12 K lower device
temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed.
Keeping the ease of use in mind, Infineon has launched
the technology with a low threshold voltage (VGS(th)) of
3 V and a very narrow tolerance of ±0.5 V. This makes the
CoolMOS™ P7 easy to design-in and enables the usage
of lower gate source voltage, which facilitates its driving
and leads to lower idle losses. To increase the ESD
ruggedness up to HBM class 2 level, 700 V CoolMOS™ P7
has an integrated Zener diode. This helps to support
increased assembly yield, leads to reduction of
production related failures and, finally, manufacturing
cost savings on customer side.
Key features
› Highly performant technology
– Low switching losses (Eoss)
– Highly eicient
– Excellent thermal behavior
› Allowing high speed switching
› Integrated protection Zener diode
› Optimized VGS(th) of 3 V with very narrow tolerance of ±0.5 V
› Finely graduated portfolio
Key benefits
› Cost competitive technology
› Further eiciency gain at higher switching speed
› Supporting less magnetic size with lower BOM costs
› High ESD ruggedness up to HBM class 2 level
› Easy to drive and design-in
› Enabler for smaller form factors and high power
density designs
› Excellent choice in selecting the best fitting product
www.infineon.com/700V-p7
Charger
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
3.5
-4.0
-4.5
0.5 1.0 1.5 2.0 2.5
I
out
[A]
CoolMOS™ P7
Relative eiciency
@ 230 V
AC
; T
amb
=25°C
△ 4%
Relative temperature
@ 230 V
AC
; T
amb
=25°C, 30 min burn-in
△
Eiciency [%]
△
Temp [K]
13
16
5
18
16
14
12
10
8
6
4
2
0
CoolMOS™ C6
Competitor 1 Competitor 2
CoolMOS™ P7 CoolMOS™ C6
Competitor 1 Competitor 2
△ 1.5%
△ 16 K
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
CoolMOS™ P7 Comp. 1
Gate threshold voltage and tolerance
V
GSth
typ. [V]
Comp. 2 Comp. 3 Comp. 4 Comp. 5 Comp. 6
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
99
700 V CoolMOS™ P7 SJ MOSFET
www.infineon.com/c7
600 V and 650 V CoolMOS™ C7 and
C7 Gold (G7) SJ MOSFET
Infineon’s highest eiciency superjunction MOSFET series
The 600 V and 650 V CoolMOS™ C7 and C7 Gold (G7)
superjunction MOSFET series are designed to achieve
record level eiciency performance – they oer
substantial eiciency benefits over the whole load range
in hard switching applications compared to previous
series and competition. This is achieved by minimizing
switching losses via ultralow levels of switching losses
(EOSS) (approximately 50 percent reduction compared
to the CoolMOS™ CP), reduced gate charge (QG)
and a careful balance of other relevant product key
parameters. The low Eoss and QG also enable operation at
higher switching frequency and related size reduction of
the circuit magnetics.
The outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) oerings make the CoolMOS™ C7
and C7 Gold series key enablers for highest eiciency and power density. While the 650 V CoolMOS™ C7 and G7 (C7 Gold)
superjunction MOSFETs are solely designed for hard switching applications such as PFC, the 600 V version is also well
suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The product
portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-leadless and top-side cooled Double DPAK (DDPAK) packages which
come with additional Kelvin source contacts enabling further eiciency advantages over the classical 3-pin approach.
Key features of CoolMOS™ C7 and C7 Gold (G7)
› Reduced switching loss parameters such as QG and Coss,
enabling higher switching frequency
› 50 percent Eoss reduction compared to older CoolMOS™ CP
› Suitable for hard switching topologies (650 V and 600 V)
› Suitable for high-end resonant (600 V only) topologies
Key benefits of CoolMOS™ C7 and C7 Gold (G7)
› Increased eiciency in hard switching topologies such
as PFC and TTF
› Reduced size and cost of magnetic components by
increased switching frequency (e.g. 65 -130 kHz)
› Increased power density by smaller packages for
same RDS(on)
–50%
7
6
5
4
3
2
1
0
0 100 200 300 400
Drain source voltage VDS [V]
Reduction of EOSS
Stored energy EOSS [µJ]
GaN HEMTIPP60R180C7 IPP60R199CP
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
IPZ60R040C7
0 200 400 600 800 1.000 1.200
PFC CCM 1200 W eiciency dierence for 90 V
AC
(PFC CCM, 1.150 W @ 65 kHz)
Pout [W]
∆ Eiciency [%]
IPW60R040C7 IPW60R045CP
Average
0.7% 0.4%
CoolMOS™ CP CoolMOS™ C7 CoolMOS™ CP CoolMOS™ C7
65 kHz 130 kHz
1.9 2.8 2.1 2.9
2.1
3.0
0.1
0.1
0.1
0.2
7.1
4.7
6.6
12.4
0.8
6.0
1.5
2.1
1.0 4.1
CoolMOS™ CP
CoolMOS™ C7
Gate charge Turn-o Turn-on Conduction
MOSFET losses [W]
IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
101
600/650 V CoolMOS™
C7/G7 SJ MOSFET
600 V CoolMOS™ P7 SJ MOSFET
Perfect combination between high eiciency and ease of use
The 600 V CoolMOS™ P7 is a general purpose series, targeting a broad variety of applications, ranging from low power
SMPS up to the highest power levels. In the low power arena, it is the successor of the 600 V CoolMOS™ CE, and for
high power SPMS applications, it is the replacement for the 600 V CoolMOS™ P6, which makes it the perfect choice for
applications such as chargers, adapters, lighting, TV power supply, PC power supply, solar, small light electric vehicles,
server power supply, telecom power supply, and electric vehicle (EV) charging.
The 600 V CoolMOS™ P7 is Infineon’s most well-balanced CoolMOS™ technology in terms of combining the ease of use
and excellent eiciency performance. Compared to its predecessors, it oers highest eiciency and improved power
density due to the significantly reduced gate charge (QG) and switching losses (EOSS) levels, as well as optimized
on-state
resistance (RDS(on)). The carefully selected integrated gate resistors enable very low ringing tendency and,
thanks to its outstanding robustness of body diode against hard commutation, it is suitable for hard as well as so
switching topologies, such as LLC. In addition, an excellent ESD capabilty helps to improve the quality in manufacturing.
The 600 V CoolMOS™ P7 familiy oers a wide range of on-resistance (RDS(on))/package combinations, including THD, as well
as SMD devices, at an RDS(on) granularity from 24 to 600 mΩ and comes along with the most competitive price/performance
ratio of all 600 V CoolMOS™ oerings.
Portfolio
Eiciency
CoolMOS™ P7 CoolMOS™ P6 CoolMOS™ C7
CoolMOS™ CE
Low ringing
Commutation
ruggedness
Pric
e competitiveness
ESD
Key features
› Suitable for hard and so switching (PFC and LLC) due to
an outstanding commutation ruggedness
› Optimized balance between eiciency and ease of use
› Significant reduction of switching and conduction losses
leading to low MOSFET temperature
› Excellent ESD robustness >2 kV (HBM) for all products
› Better RDS(on)/package products compared to competition
› Large portfolio with granular RDS(on) selection qualified for
a variety of industrial and consumer applications
Key benefits
› Ease of use and fast design-in through low ringing
tendency and usage across PFC and PWM stages
› Improved eiciency and simplified thermal management
due to low switching and conduction losses
› Higher manufacturing quality due to
>2 kV ESD protection
› Increased power density solutions enabled by using
products with smaller footprint
› Suitable for a wide variety of applications and power ranges
www.infineon.com/600V-p7
Charger
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
100
101
600 V CoolMOS™ P7 SJ MOSFET
www.infineon.com/c7
600 V and 650 V CoolMOS™ C7 and
C7 Gold (G7) SJ MOSFET
Infineon’s highest eiciency superjunction MOSFET series
The 600 V and 650 V CoolMOS™ C7 and C7 Gold (G7)
superjunction MOSFET series are designed to achieve
record level eiciency performance – they oer
substantial eiciency benefits over the whole load range
in hard switching applications compared to previous
series and competition. This is achieved by minimizing
switching losses via ultralow levels of switching losses
(EOSS) (approximately 50 percent reduction compared
to the CoolMOS™ CP), reduced gate charge (QG)
and a careful balance of other relevant product key
parameters. The low Eoss and QG also enable operation at
higher switching frequency and related size reduction of
the circuit magnetics.
The outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) oerings make the CoolMOS™ C7
and C7 Gold series key enablers for highest eiciency and power density. While the 650 V CoolMOS™ C7 and G7 (C7 Gold)
superjunction MOSFETs are solely designed for hard switching applications such as PFC, the 600 V version is also well
suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The product
portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-leadless and top-side cooled Double DPAK (DDPAK) packages which
come with additional Kelvin source contacts enabling further eiciency advantages over the classical 3-pin approach.
Key features of CoolMOS™ C7 and C7 Gold (G7)
› Reduced switching loss parameters such as QG and Coss,
enabling higher switching frequency
› 50 percent Eoss reduction compared to older CoolMOS™ CP
› Suitable for hard switching topologies (650 V and 600 V)
› Suitable for high-end resonant (600 V only) topologies
Key benefits of CoolMOS™ C7 and C7 Gold (G7)
› Increased eiciency in hard switching topologies such
as PFC and TTF
› Reduced size and cost of magnetic components by
increased switching frequency (e.g. 65 -130 kHz)
› Increased power density by smaller packages for
same RDS(on)
–50%
7
6
5
4
3
2
1
0
0 100 200 300 400
Drain source voltage VDS [V]
Reduction of EOSS
Stored energy EOSS [µJ]
GaN HEMTIPP60R180C7 IPP60R199CP
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
IPZ60R040C7
0 200 400 600 800 1.000 1.200
PFC CCM 1200 W eiciency dierence for 90 V
AC
(PFC CCM, 1.150 W @ 65 kHz)
Pout [W]
∆ Eiciency [%]
IPW60R040C7 IPW60R045CP
Average
0.7% 0.4%
CoolMOS™ CP CoolMOS™ C7 CoolMOS™ CP CoolMOS™ C7
65 kHz 130 kHz
1.9 2.8 2.1 2.9
2.1
3.0
0.1
0.1
0.1
0.2
7.1
4.7
6.6
12.4
0.8
6.0
1.5
2.1
1.0 4.1
CoolMOS™ CP
CoolMOS™ C7
Gate charge Turn-o Turn-on Conduction
MOSFET losses [W]
IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
101
600/650 V CoolMOS™
C7/G7 SJ MOSFET
CoolMOS™ CE SJ MOSFET
High voltage superjunction MOSFETs for consumer
CoolMOS™ CE is a product family launched by Infineon to address consumer and lighting applications. It oers benefits
in eiciency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness,
while delivering the right fit performance and excellent Infineon quality.
CoolMOS™ CE customer benefits
Product portfolio We oer a broad portfolio covering five voltage classes in both through-hole and SMD packages
Capacity We own the world largest capacity for power devices, with three dedicated frontends and four backends
Quality Our field failure rates are as low as 0.1 DPM
Design-in support We have a large field application engineering team to provide professional and flexible support for your design
www.infineon.com/ce
Application example: 10 W and 15 W smartphone charger
10 W charger
IPS65R1K5CE
100
90
80
70
60
50
40
30
20
10
0
Temperature [°C]
CoolMOS™ CE meets typical MOSFET
case temperature requirements in charger applications
19°C 13°C 14°C 7°C
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE case temperature:
The maximum MOSFET case temperature is required to
be below 90°C. CoolMOS™ CE meets this requirement and
oers enough margin required for design-in flexibility.
10 W charger
IPS65R1K5CE
100
95
90
85
80
75
70
65
60
55
50
Average eiciency [%]
CoolMOS™ CE meets the standard
eiciency requirements in charger application
4.5% 4.5% 14% 7%
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE eiciency performance:
CoolMOS™ CE meets the 80 percent standard eiciency
requirement and oers enough margin required for
design-in flexibility.
The performance of CoolMOS™ CE
in the 10 W and 15 W design
demonstrates that the series meets
common EMI requirements for
charger applications and thus, is also
oering design-in flexibility.
40
30
20
10
0
-10
30M 50 60 80 100M
Frequency [Hz]
10 W design: IPS65R1K5CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
15 W design: IPS65R1K0CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
Level [dBµV/m]
Level [dBµV/m]
200 300 400 500 800 1G
40
30
20
10
0
-10
Frequency [Hz]
30M 50 60 80 100M 200 300 400 500 800
1G
EN 55022 B RE 10 m OP EN 55022 B RE 10 m OP
Horizontal direction Vertical direction Horizontal direction Vertical direction
Charger
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
103
CoolMOS™ CE SJ MOSFET
600 V CoolMOS™ CFD7 SJ MOSFET
Infineon's answer to resonant switching high power applications
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET series with an integrated fast body
diode. It is the ideal choice for resonant topologies, such as LLC and ZVS PSFB, and targets the high SMPS market.
As a result of significantly reduced gate charge (QG), improved turn-o behavior, a reverse recovery charge (Qrr) of
up to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market,
it combines highest eiciency and best-in-class reliability in so switching applications, without sacrificing the easy
implementation in the design-in process.
In addition, the 600 V CoolMOS™ CFD7 enables higher power density solutions by oering best-in-class on-state
resistance (RDS(on)) package combinations in through-hole devices, as well as in surface-mount devices. In ThinPAK 8x8
and
TO-220 with CoolMOS™ CFD7, a RDS(on) of around 30 percent below the next best competitor oering can be achieved.
All this together makes CoolMOS™ CFD7 the perfect fit for server and telecom applications, and it is also suitable for
EV-charging stations.
Key features
› Ultrafast body diode
› Best-in-class reverse recovery charge (Qrr)
› Improved reverse diode dv/dt and dif/dt ruggedness
› Lowest figure of merit (RDS(on) x QG x Eoss)
› Best-in-class RDS(on)/package combinations
Key benefits
› Best-in-class hard commutation ruggedness
› Highest reliability for resonant topologies
› Highest eiciency with outstanding
ease of use/performance trade-o
› Enabling increased power density solutions
www.infineon.com/cfd7
1200
1000
800
600
400
200
0
Comp. C Comp. A Comp. D
Q
rr
[nC]
Comp. B
-69 %
-32 %
CFD2 CFD7
World‘s best Q
rr
got even better!
Q
rr
comparison of 170 mΩ CFD vs. 190 mΩ range competition*
*Comparison based on datasheet values
Δ Eiciency [%]
Load current [A]
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
0 10 20 30 40
IPW60R070CFD7 IPW65R080CFD Competitor A
Competitor B Competitor C Competitor D
Eiciency comparison of CFD7 vs. CFD2 and c
ompetition in 2 kW ZVS
Δ 1.45% Δ 0.17%
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
102
103
600 V CoolMOS™ CFD7 SJ MOSFET
CoolMOS™ CE SJ MOSFET
High voltage superjunction MOSFETs for consumer
CoolMOS™ CE is a product family launched by Infineon to address consumer and lighting applications. It oers benefits
in eiciency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness,
while delivering the right fit performance and excellent Infineon quality.
CoolMOS™ CE customer benefits
Product portfolio We oer a broad portfolio covering five voltage classes in both through-hole and SMD packages
Capacity We own the world largest capacity for power devices, with three dedicated frontends and four backends
Quality Our field failure rates are as low as 0.1 DPM
Design-in support We have a large field application engineering team to provide professional and flexible support for your design
www.infineon.com/ce
Application example: 10 W and 15 W smartphone charger
10 W charger
IPS65R1K5CE
100
90
80
70
60
50
40
30
20
10
0
Temperature [°C]
CoolMOS™ CE meets typical MOSFET
case temperature requirements in charger applications
19°C 13°C 14°C 7°C
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE case temperature:
The maximum MOSFET case temperature is required to
be below 90°C. CoolMOS™ CE meets this requirement and
oers enough margin required for design-in flexibility.
10 W charger
IPS65R1K5CE
100
95
90
85
80
75
70
65
60
55
50
Average eiciency [%]
CoolMOS™ CE meets the standard
eiciency requirements in charger application
4.5% 4.5% 14% 7%
15 W charger
IPS65R1K0CE
High line Low line
CoolMOS™ CE eiciency performance:
CoolMOS™ CE meets the 80 percent standard eiciency
requirement and oers enough margin required for
design-in flexibility.
The performance of CoolMOS™ CE
in the 10 W and 15 W design
demonstrates that the series meets
common EMI requirements for
charger applications and thus, is also
oering design-in flexibility.
40
30
20
10
0
-10
30M 50 60 80 100M
Frequency [Hz]
10 W design: IPS65R1K5CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
15 W design: IPS65R1K0CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
Level [dBµV/m]
Level [dBµV/m]
200 300 400 500 800 1G
40
30
20
10
0
-10
Frequency [Hz]
30M 50 60 80 100M 200 300 400 500 800
1G
EN 55022 B RE 10 m OP EN 55022 B RE 10 m OP
Horizontal direction Vertical direction Horizontal direction Vertical direction
Charger
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
103
CoolMOS™ CE SJ MOSFET
CoolMOS™ SJ MOSFET low power
package innovations
Addressing today’s consumer needs
SOT-223
The SOT-223 package without middle pin is a cost-eective alternative to
DPAK, addressing the need for cost reductions in price sensitive applications.
It oers a smaller footprint, while still being pin-to-pin compatible with
DPAK, thus, allowing a drop-in replacement for DPAK and second sourcing.
Moreover, SOT-223 achieves comparable thermal performance to DPAK and
enables customers to achieve improved form factors or space savings in
designs with low power dissipation.
ThinPAK 5x6
ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent
when compared to the DPAK package which is widely used in chargers and
adapters. ThinPAK 5x6 is the right device to replace DPAK and meet the market
demands of slimmer and smaller designs. Also ThinPAK 5x6 enables a reduced
charger and adapter case hot spot temperature by increasing the space
between the MOSFET and the charger and adapter case.
TO-220 FullPAK Narrow Lead
Infineon’s TO-220 FullPAK Narrow Lead addresses customer needs with
regards to height reduction requirements in adapter and charger applications.
By oering an optimized stando width and height and improved creepage
distance, the package can be fully inserted into the PCB without any
production concerns and, therefore, is especially suitable for slim and
semi-slim adapter solutions.
TO-220 FullPAK Wide Creepage
This package solution has an increased creepage distance between the pins to
4.25 mm compared to 2.54 mm of a TO-220 FullPAK package. It targets open
frame power supplies such asTV setsandPC power,where dust can enter
the case through air vents. Dust particles can reduce the eective creepage
between pins over time, which may lead to high voltage arcing. The package
meets the requirements of open frame power supplies without any additional
measures. Thus, it reduces system cost by oering an alternative to frequently
used approaches to increase creepage distance.
Cost-eective drop-in
replacement for DPAK
Solution for slim and small
adapters and chargers
Solution for height reduction
in adapters and chargers
Improved creepage distance for
open frame power supplies
www.infineon.com/coolmos-latest-packages
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
105
CoolMOS™ low power packages
CoolMOS™ SJ MOSFET high power
package innovations
Space-saving and high performance packages
TO-247 4-pin with asymmetric leads
The TO-247 4-pin package with asymmetric leads is an optimized version of the
standard TO-247 4-pin and enables highest eiciency and controllability in the
high power SMPS market. The fourth pin acts as a Kelvin source. The main current
of the switch is placed outside of the gate loop and the feedback is eliminated.
This leads to less switching losses, especially at high currents. Secondly, the
EMI will be reduced due to cleaner waveforms. In addition, the asymmetric
leads further improve the ease of use in the design-in process. Compared to the
standard TO-247 4-pin the distance between the critical pins has been increased
to enable simplified wave soldering and reduced board yield loss.
Top-side cooled Double DPAK (DDPAK)
This is the first top-side cooled surface mount device (SMD) package addressing
high power SMPS applications such as PC power, solar, server and telecom.
SMD-based SMPS designs support fast switching and help to reduce the
parasitic inductance associated with long leaded packages such as the
common TO-220 package. In today’s SMD-based designs, the output power
is restricted by the thermal limit of the PCB material because the heat must
be dissipated through the board. Thanks to the top-side cooling concept
of DDPAK, the thermal decoupling of board and semiconductor is possible,
enabling higher power density or improved system lifetime.
ThinPAK 8x8
With very small footprint of only 64 mm² (vs. 150 mm² for the D²PAK) and a very
low profile with only 1 mm height (vs. 4.4 mm for the D²PAK) the ThinPAK 8x8
leadless SMD package for high voltage MOSFETs is a first choice to decrease
system size in power-density driven designs. Low parasitic inductance and a
separate 4-pin Kelvin source connection oer best eiciency and ease of use.
The package is RoHS compliant with halogen-free mold compound.
TO-leadless
Combined with the latest CoolMOS™ C7 Gold (G7) technology, the TO-leadless
(TOLL) package is Infineon’s flagship SMD package for high power/high current
SMD solutions. Compared to D
2
PAK 7-pin, TO-leadless shows a 30 percent
reduction in footprint, yet oers improved thermal performance. This and the
50 percent height reduction result in a significant advantage whenever highest
power density is demanded. Equipped with 4-pin Kelvin source connection
and low parasitic inductances the package oers best eiciency and ease of
use. The package is MSL1 compliant and reflow solderable.
For highest eiciency and
controllability in high power
SMPS markets
Enabling significant space savings
Optimized for high power
applications
www.infineon.com/coolmos-latest-packages
Innovative top-side cooled SMD
solution for high power applications
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
104
105
CoolMOS™ high power packages
CoolMOS™ SJ MOSFET low power
package innovations
Addressing today’s consumer needs
SOT-223
The SOT-223 package without middle pin is a cost-eective alternative to
DPAK, addressing the need for cost reductions in price sensitive applications.
It oers a smaller footprint, while still being pin-to-pin compatible with
DPAK, thus, allowing a drop-in replacement for DPAK and second sourcing.
Moreover, SOT-223 achieves comparable thermal performance to DPAK and
enables customers to achieve improved form factors or space savings in
designs with low power dissipation.
ThinPAK 5x6
ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent
when compared to the DPAK package which is widely used in chargers and
adapters. ThinPAK 5x6 is the right device to replace DPAK and meet the market
demands of slimmer and smaller designs. Also ThinPAK 5x6 enables a reduced
charger and adapter case hot spot temperature by increasing the space
between the MOSFET and the charger and adapter case.
TO-220 FullPAK Narrow Lead
Infineon’s TO-220 FullPAK Narrow Lead addresses customer needs with
regards to height reduction requirements in adapter and charger applications.
By oering an optimized stando width and height and improved creepage
distance, the package can be fully inserted into the PCB without any
production concerns and, therefore, is especially suitable for slim and
semi-slim adapter solutions.
TO-220 FullPAK Wide Creepage
This package solution has an increased creepage distance between the pins to
4.25 mm compared to 2.54 mm of a TO-220 FullPAK package. It targets open
frame power supplies such asTV setsandPC power,where dust can enter
the case through air vents. Dust particles can reduce the eective creepage
between pins over time, which may lead to high voltage arcing. The package
meets the requirements of open frame power supplies without any additional
measures. Thus, it reduces system cost by oering an alternative to frequently
used approaches to increase creepage distance.
Cost-eective drop-in
replacement for DPAK
Solution for slim and small
adapters and chargers
Solution for height reduction
in adapters and chargers
Improved creepage distance for
open frame power supplies
www.infineon.com/coolmos-latest-packages
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
105
CoolMOS™ low power packages
CoolMOS™ SJ MOSFET automotive – ready to support future application trends
Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly
growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy eiciency
of the used electric components. The used battery voltage classes tend to become standardized at 270 V, 480 V and
870 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling
within the vehicle. Discrete high voltage components are widely used for on board charger (OBC) and DC-DC converter
(LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging
impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC
topologies have been found in the range from 3.2 kW to 7.2 kW, whereas the future tends to stir the trend towards
11 kW or even up to 22 kW. This development, paired with a demand for high eiciency and power density at low
system cost, is a strong driver for the usage of three-phase solutions.
While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market,
the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers full
power if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level
topology minimizes the filter eort compared to other solutions. By using the doubled frequency on the magnetic
components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier,
followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs.
This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired eiciency
level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V
CoolMOS™ CPA and 650 V CoolMOS™ CFDA portfolio, covering an RDS(on) range from 45 to 660 mΩ, we are well prepared
to support your next generation three-phase Vienna rectifier design. With CoolMOS™ you are ready to seize your share
in the emerging high-power onboard-charger markets.
www.infineon.com/coolmos-automotive
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
107
Classic PFC stage for OBC OBC Vienna rectifier for three-phase PFC in OBC
CoolMOS™ SJ MOSFET for automotive
600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA –
on the fast lane in automotive applications
Highest system performance in a size and weight constrained environment, outstanding and proven product quality
and reliability, as well as 100 percent reliable delivery are the needs of our automotive customers. With the high
voltage automotive MOSFET series 600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA, Infineon is perfectly prepared to
take the challenges in the strongly growing automotive market.
CoolMOS™ SJ MOSFET automotive – benchmark in quality and reliability
Focus on top-notch quality and reliability without any compromise – that is the principle Infineon applies during
development and qualification of all CoolMOS™ superjunction technologies. For our automotive grade derivatives, the
great quality levels of the industrial base technologies are further boosted by special screening measures in front and
back end, as well as by extended qualification procedures. The Infineon robustness validation approach with extended
stress-test procedures, doubling the real application requirements, is one of our key measures to ensure a quality level
well beyond the formal requirements of the AEC Q101 standard. Aside from extended stress times on standard qualification
tests, it comprises test procedures, specially developed by Infineon to ensure highest quality of e.g., the power
metallization of our devices. Usage of robust package technologies, 100 percent gate oxide screening, and top-notch
production monitoring, including yield screening measures, part average testing (PAT), statistical bin alarm (SBA), and
pattern recognition procedures, complete our package to guarantee highest automotive quality. This holistic approach
results in an unrivalled quality position of our 600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA.
AEC Q101
Robustness validation – example for thermal cycling test
1.000 cycles
1.270 cycles
+254%
2.540 cycles
Customer mission
profile
Infineon automotive
robustness valida
tion
www.infineon.com/cfda
www.infineon.com/coolmos-automotive
Product series Key features Applications Quality
600 V CoolMOS™ CPA Best choice for demanding hard
switching applications
› Lowest RDS(on) per package
› Lowest gate charge value QG
› Hard switching topologies
› PFC boost stages in on-board charger
› Active clamp or two transistor forward
in DC-DC converter Quality level well beyond the formal
requirements of the AEC Q101 standard
through
› Special screening measures in front end,
back end
› Mission-profile based qualification
procedures
650 V CoolMOS™ CFDA Easy implementation of layout and
design
› Integrated fast body diode
› Limited voltage overshoot during hard
commutation – self-limiting dI/dt and
dV/dt
› Low Qrr at repetitive commutation on
body diode and low Qoss
› Resonant switching topologies
› DC-DC stage of OBC
› LLC or full-bridge ZVS in DC-DC converter
› HID lamp
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
106
107
CoolMOS™ automotive
CoolMOS™ SJ MOSFET automotive – ready to support future application trends
Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly
growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy eiciency
of the used electric components. The used battery voltage classes tend to become standardized at 270 V, 480 V and
870 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling
within the vehicle. Discrete high voltage components are widely used for on board charger (OBC) and DC-DC converter
(LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging
impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC
topologies have been found in the range from 3.2 kW to 7.2 kW, whereas the future tends to stir the trend towards
11 kW or even up to 22 kW. This development, paired with a demand for high eiciency and power density at low
system cost, is a strong driver for the usage of three-phase solutions.
While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market,
the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers full
power if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level
topology minimizes the filter eort compared to other solutions. By using the doubled frequency on the magnetic
components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier,
followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs.
This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired eiciency
level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V
CoolMOS™ CPA and 650 V CoolMOS™ CFDA portfolio, covering an RDS(on) range from 45 to 660 mΩ, we are well prepared
to support your next generation three-phase Vienna rectifier design. With CoolMOS™ you are ready to seize your share
in the emerging high-power onboard-charger markets.
www.infineon.com/coolmos-automotive
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
107
Classic PFC stage for OBC OBC Vienna rectifier for three-phase PFC in OBC
www.infineon.com/coolmos
www.infineon.com/c3
www.infineon.com/ce
www.infineon.com/700v-p7
800V CoolMOS™ CE ACTIVE
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
310 IPA80R310CE
460 IPA80R460CE
650 IPA80R650CE
1000 IPA80R1K0CE IPD80R1K0CE IPU80R1K0CE
1400 IPA80R1K4CE IPD80R1K4CE
2800 IPD80R2K8CE
700 V CoolMOS™ P7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO -220 TO – 262
(I
2
PAK)
TO-251
(IPAK Short
Lead)
TO-220 FullPAK ThinPAK 5x6 TO-252
(DPAK)
TO-220 FullPAK
narrow lead
TO-251
(IPAK Short Lead
w/ ISO Stando)
SOT-223
360 IPS70R360P7S IPA70R360P7S IPD70R360P7S IPAN70R360P7S IPSA70R360P7S IPN70R360P7S
450 IPA70R450P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S
600 IPS70R600P7S IPA70R600P7S IPLK70R600P7 IPD70R600P7S IPAN70R600P7S IPSA70R600P7S IPN70R600P7S
750 IPA70R750P7S IPLK70R750P7 IPAN70R750P7S IPSA70R750P7S IPN70R750P7S
900 IPS70R900P7S IPA70R900P7S IPLK70R900P7 IPD70R900P7S IPAN70R900P7S IPSA70R900P7S IPN70R900P7S
1200 IPLK70R1K2P7 IPSA70R1K2P7S IPN70R1K2P7S
1400 IPS70R1K4P7S IPLK70R1K4P7 IPD70R1K4P7S IPSA70R1K4P7S IPN70R1K4P7S
2000 IPLK70R2K0P7 IPSA70R2K0P7S IPN70R2K0P7S
800V CoolMOS™ C3 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
85 SPW55N80C3
290 SPP17N80C3 SPB17N80C3 SPA17N80C3 SPW17N80C3
450 SPP11N80C3 SPA11N80C3 SPW11N80C3
650 SPP08N80C3 SPA08N80C3
900 SPP06N80C3 SPA06N80C3 SPD06N80C3
1300 SPP04N80C3 SPA04N80C3 SPD04N80C3
2700 SPA02N80C3 SPD02N80C3
700V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK
Wide Creepage
TO-262
(I
2
PAK)
TO-251
(IPAK Short Lead
with ISO Stando)
TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223
600 IPAW70R600CE IPSA70R600CE IPD70R600CE
950 IPAW70R950CE IPI70R950CE IPSA70R950CE IPD70R950CE IPS70R950CE
1000 IPN70R1K0CE
1400 IPSA70R1K4CE IPD70R1K4CE IPS70R1K4CE
1500 IPN70R1K5CE
2000 IPSA70R2K0CE IPD70R2K0CE IPS70R2K0CE
2100 IPN70R2K1CE
* Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
109
CoolMOS™ product portfolio
900V CoolMOS™ C3 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
120 IPW90R120C3
340 IPP90R340C3 IPI90R340C3 IPB90R340C3 IPA90R340C3 IPW90R340C3
500 IPI90R500C3 IPA90R500C3 IPW90R500C3
800 IPP90R800C3 IPA90R800C3
1000 IPP90R1K0C3 IPA90R1K0C3
1200 IPP90R1K2C3 IPI90R1K2C3 IPA90R1K2C3 IPD90R1K2C3
950V CoolMOS™ P7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO-220 TO-220
FullPAK
SOT-223 TO-251
Long lead
TO-252
(DPAK)
TO-220
Wide creepage
ThinPAK 8x8 D
2
PAK
450 IPA95R450P7 IPU95R450P7 IPD95R450P7
750 IPA95R750P7 IPU95R750P7 IPD95R750P7
1200 IPA95R1K2P7 IPN95R1K2P7 IPU95R1K2P7 IPD95R1K2P7
2000 IPN95R2K0P7 IPU95R2K0P7 IPD95R2K0P7
3700 IPN95R3K7P7 IPU95R3K7P7
800 V CoolMOS™ P7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
narrow lead
ThinPAK 5x6*
280 IPP80R280P7 IPA80R280P7 IPW80R280P7 IPD80R280P7 IPAN80R280P7
360 IPP80R360P7 IPA80R360P7 IPW80R360P7 IPD80R360P7 IPAN80R360P7
450 IPP80R450P7 IPA80R450P7 IPD80R450P7 IPAN80R450P7
600 IPP80R600P7 IPA80R600P7 IPD80R600P7 IPU80R600P7 IPS80R600P7 IPN80R600P7 IPLK80R600P7*
750 IPP80R750P7 IPA80R750P7 IPD80R750P7 IPU80R750P7 IPS80R750P7 IPN80R750P7 IPLK80R750P7*
900 IPP80R900P7 IPA80R900P7 IPD80R900P7 IPU80R900P7 IPS80R900P7 IPN80R900P7 IPLK80R900P7*
1200 IPP80R1K2P7 IPA80R1K2P7 IPD80R1K2P7 IPU80R1K2P7 IPS80R1K2P7 IPN80R1K2P7 IPLK80R1K2P7*
1400 IPP80R1K4P7 IPA80R1K4P7 IPD80R1K4P7 IPU80R1K4P7 IPS80R1K4P7 IPN80R1K4P7 IPLK80R1K4P7*
2000 IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P7 IPN80R2K0P7 IPLK80R2K0P7*
2400 IPD80R2K4P7 IPU80R2K4P7 IPS80R2K4P7 IPN80R2K4P7
3300 IPD80R3K3P7 IPU80R3K3P7 IPN80R3K3P7
4500 IPD80R4K5P7 IPU80R4K5P7 IPN80R4K5P7
www.infineon.com/coolmos
www.infineon.com/c3
www.infineon.com/800v-p7
www.infineon.com/950v-p7
* Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
108
109
CoolMOS™ product portfolio
www.infineon.com/coolmos
www.infineon.com/c3
www.infineon.com/ce
www.infineon.com/700v-p7
800V CoolMOS™ CE ACTIVE
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
310 IPA80R310CE
460 IPA80R460CE
650 IPA80R650CE
1000 IPA80R1K0CE IPD80R1K0CE IPU80R1K0CE
1400 IPA80R1K4CE IPD80R1K4CE
2800 IPD80R2K8CE
700 V CoolMOS™ P7 ACTIVE & PREFERRED
Charger
RDS(on)
[mΩ]
TO -220 TO – 262
(I
2
PAK)
TO-251
(IPAK Short
Lead)
TO-220 FullPAK ThinPAK 5x6 TO-252
(DPAK)
TO-220 FullPAK
narrow lead
TO-251
(IPAK Short Lead
w/ ISO Stando)
SOT-223
360 IPS70R360P7S IPA70R360P7S IPD70R360P7S IPAN70R360P7S IPSA70R360P7S IPN70R360P7S
450 IPA70R450P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S
600 IPS70R600P7S IPA70R600P7S IPLK70R600P7 IPD70R600P7S IPAN70R600P7S IPSA70R600P7S IPN70R600P7S
750 IPA70R750P7S IPLK70R750P7 IPAN70R750P7S IPSA70R750P7S IPN70R750P7S
900 IPS70R900P7S IPA70R900P7S IPLK70R900P7 IPD70R900P7S IPAN70R900P7S IPSA70R900P7S IPN70R900P7S
1200 IPLK70R1K2P7 IPSA70R1K2P7S IPN70R1K2P7S
1400 IPS70R1K4P7S IPLK70R1K4P7 IPD70R1K4P7S IPSA70R1K4P7S IPN70R1K4P7S
2000 IPLK70R2K0P7 IPSA70R2K0P7S IPN70R2K0P7S
800V CoolMOS™ C3 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
85 SPW55N80C3
290 SPP17N80C3 SPB17N80C3 SPA17N80C3 SPW17N80C3
450 SPP11N80C3 SPA11N80C3 SPW11N80C3
650 SPP08N80C3 SPA08N80C3
900 SPP06N80C3 SPA06N80C3 SPD06N80C3
1300 SPP04N80C3 SPA04N80C3 SPD04N80C3
2700 SPA02N80C3 SPD02N80C3
700V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK
Wide Creepage
TO-262
(I
2
PAK)
TO-251
(IPAK Short Lead
with ISO Stando)
TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223
600 IPAW70R600CE IPSA70R600CE IPD70R600CE
950 IPAW70R950CE IPI70R950CE IPSA70R950CE IPD70R950CE IPS70R950CE
1000 IPN70R1K0CE
1400 IPSA70R1K4CE IPD70R1K4CE IPS70R1K4CE
1500 IPN70R1K5CE
2000 IPSA70R2K0CE IPD70R2K0CE IPS70R2K0CE
2100 IPN70R2K1CE
* Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
109
CoolMOS™ product portfolio
600 V CoolMOS™ CFD7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
18 IPW60R018CFD7
24 IPW60R024CFD7*
31 IPW60R31CFD7
40 IPB60R040CFD7* IPW60R40CFD7
55 IPB60R055CFD7* IPW60R55CFD7
60 IPL60R060CFD7
70 IPP60R70CFD7 IPB60R070CFD7* IPW60R70CFD7
75 IPL60R75CFD7
90/95 IPP60R90CFD7 IPB60R090CFD7* IPW60R90CFD7 IPL60R095CFD7
105/115 IPP60R105CFD7 IPB60R105CFD7* IPW60R105CFD7 IPL60R115CFD7
125/140 IPP60R125CFD7 IPB60R125CFD7* IPA60R125CFD7 IPW60R125CFD7 IPL60R140CFD7
145/160 IPP60R145CFD7 IPB60R145CFD7* IPA60R145CFD7 IPW60R145CFD7 IPD60R145CFD7 IPL60R160CFD7
170 IPP60R170CFD7 IPB60R170CFD7* IPA60R170CFD7 IPW60R170CFD7 IPD60R170CFD7
185 IPL60R185CFD7
210/225 IPP60R210CFD7 IPB60R210CFD7* IPA60R210CFD7 IPD60R210CFD7 IPL60R225CFD7*
280 IPP60R280CFD7 IPB60R280CFD7* IPA60R280CFD7 IPD60R280CFD7
360 IPP60R360CFD7* IPB60R360CFD7* IPA60R360CFD7* IPD60R360CFD7*
www.infineon.com/coolmos
www.infineon.com/600v-p7 www.infineon.com/g7
600 V CoolMOS™ C7 Gold (G-series) ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-Leadless
(TOLL)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(Double DPAK)
ThinPAK 8x8
28 IPT60R028G7
50 IPT60R050G7 IPDD60R050G7
80 IPT60R080G7 IPDD60R080G7
102 IPT60R102G7 IPDD60R102G7
125 IPT60R125G7 IPDD60R125G7
150 IPT60R150G7 IPDD60R150G7
190 IPDD60R190G7
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Standard grade
Charger
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-220 FullPAK
Narrow lead
TO-247 4-pin TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 SOT-223
180 IPA60R180P7S IPAN60R180P7S IPD60R180P7S IPAW60R180P7S
280 IPA60R280P7S IPAN60R280P7S IPD60R280P7S IPAW60R280P7S
360 IPA60R360P7S IPAN60R360P7S IPD60R360P7S IPAW60R360P7S IPN60R360P7S
600 IPA60R600P7S IPAN60R600P7S IPD60R600P7S IPAW60R600P7S IPN60R600P7S
*Coming soon
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Industrial grade
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-247 TO-247 4-pin
asymmetric leads
TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 D
2
PAK
24 IPW60R024P7 IPZA60R024P7
37 IPW60R037P7 IPZA60R037P7
45 IPW60R045P7 IPZA60R045P7 IPB60R045P7
60 IPP60R060P7 IPA60R060P7 IPW60R060P7 IPZA60R060P7 IPB60R060P7
65 IPL60R065P7
80 IPP60R080P7 IPA60R080P7 IPW60R080P7 IPZA60R080P7 IPL60R085P7 IPB60R080P7
99 IPP60R099P7 IPA60R099P7 IPW60R099P7 IPZA60R099P7 IPB60R099P7
105 IPL60R105P7
120 IPP60R120P7 IPA60R120P7 IPW60R120P7 IPZA60R120P7 IPB60R120P7
125 IPL60R125P7
160 IPP60R160P7 IPA60R160P7
180 IPP60R180P7 IPA60R180P7 IPW60R180P7 IPZA60R180P7 IPD60R180P7 IPB60R180P7
185 IPL60R185P7
280 IPP60R280P7 IPA60R280P7 IPD60R280P7 IPB60R280P7
285 IPL60R285P7
360 IPP60R360P7 IPA60R360P7 IPD60R360P7 IPB60R360P7
365 IPL60R365P7
600 IPP60R600P7 IPA60R600P7 IPD60R600P7
Charger
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
111
CoolMOS™ product portfolio
650V CoolMOS™ CFD2 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-262
(I
2
PAK)
TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-252
(DPAK)
ThinPAK 8x8
41 IPW65R041CFD
80 IPW65R080CFD
110 IPP65R110CFD IPB65R110CFD IPA65R110CFD IPW65R110CFD
150 IPP65R150CFD IPB65R150CFD IPA65R150CFD IPW65R150CFD
165 IPL65R165CFD
190 IPP65R190CFD IPI65R190CFD IPB65R190CFD IPA65R190CFD IPW65R190CFD
210 IPL65R210CFD
310 IPP65R310CFD IPB65R310CFD IPA65R310CFD
340 IPL65R340CFD
420 IPP65R420CFD IPA65R420CFD IPW65R420CFD IPD65R420CFD
660 IPA65R660CFD IPD65R660CFD
950 IPD65R950CFD
1400 IPD65R1K4CFD
www.infineon.com/coolmos
www.infineon.com/g7
www.infineon.com/c7
www.infineon.com/cfd2
www.infineon.com/ce
650V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
400 IPA65R400CE IPD65R400CE IPS65R400CE
650 IPA65R650CE IPD65R650CE IPS65R650CE IPAN65R650CE
1000 IPA65R1K0CE IPD65R1K0CE IPS65R1K0CE
1500 IPA65R1K5CE IPD65R1K5CE IPN65R1K5CE
650V CoolMOS™ C7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
19 IPW65R019C7 IPZ65R019C7
45 IPP65R045C7 IPB65R045C7 IPA65R045C7 IPW65R045C7 IPZ65R045C7
65 IPP65R065C7 IPB65R065C7 IPA65R065C7 IPW65R065C7 IPZ65R065C7
70 IPL65R070C7
95 IPP65R095C7 IPB65R095C7 IPA65R095C7 IPW65R095C7 IPZ65R095C7
99 IPL65R099C7
125 IPP65R125C7 IPB65R125C7 IPA65R125C7 IPW65R125C7
130 IPL65R130C7
190 IPP65R190C7 IPB65R190C7 IPA65R190C7 IPW65R190C7 IPD65R190C7
195 IPL65R195C7
225 IPP65R225C7 IPB65R225C7 IPA65R225C7 IPD65R225C7
230 IPL65R230C7
650 V CoolMOS™ C7 Gold (G-series) ACTIVE & PREFERRED
R
DS(on)
[mΩ]
TO -220 TO-Leadless
(TOLL)
TO-263
(D
2
PAK)
TO-220
FullPAK
TO-247 TO -252
(DPAK)
33 IPT65R033G7
105 IPT65R105G7
195 IPT65R195G7
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
110
111
CoolMOS™ product portfolio
600 V CoolMOS™ CFD7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
18 IPW60R018CFD7
24 IPW60R024CFD7*
31 IPW60R31CFD7
40 IPB60R040CFD7* IPW60R40CFD7
55 IPB60R055CFD7* IPW60R55CFD7
60 IPL60R060CFD7
70 IPP60R70CFD7 IPB60R070CFD7* IPW60R70CFD7
75 IPL60R75CFD7
90/95 IPP60R90CFD7 IPB60R090CFD7* IPW60R90CFD7 IPL60R095CFD7
105/115 IPP60R105CFD7 IPB60R105CFD7* IPW60R105CFD7 IPL60R115CFD7
125/140 IPP60R125CFD7 IPB60R125CFD7* IPA60R125CFD7 IPW60R125CFD7 IPL60R140CFD7
145/160 IPP60R145CFD7 IPB60R145CFD7* IPA60R145CFD7 IPW60R145CFD7 IPD60R145CFD7 IPL60R160CFD7
170 IPP60R170CFD7 IPB60R170CFD7* IPA60R170CFD7 IPW60R170CFD7 IPD60R170CFD7
185 IPL60R185CFD7
210/225 IPP60R210CFD7 IPB60R210CFD7* IPA60R210CFD7 IPD60R210CFD7 IPL60R225CFD7*
280 IPP60R280CFD7 IPB60R280CFD7* IPA60R280CFD7 IPD60R280CFD7
360 IPP60R360CFD7* IPB60R360CFD7* IPA60R360CFD7* IPD60R360CFD7*
www.infineon.com/coolmos
www.infineon.com/600v-p7 www.infineon.com/g7
600 V CoolMOS™ C7 Gold (G-series) ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO -220 TO-Leadless
(TOLL)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(Double DPAK)
ThinPAK 8x8
28 IPT60R028G7
50 IPT60R050G7 IPDD60R050G7
80 IPT60R080G7 IPDD60R080G7
102 IPT60R102G7 IPDD60R102G7
125 IPT60R125G7 IPDD60R125G7
150 IPT60R150G7 IPDD60R150G7
190 IPDD60R190G7
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Standard grade
Charger
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-220 FullPAK
Narrow lead
TO-247 4-pin TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 SOT-223
180 IPA60R180P7S IPAN60R180P7S IPD60R180P7S IPAW60R180P7S
280 IPA60R280P7S IPAN60R280P7S IPD60R280P7S IPAW60R280P7S
360 IPA60R360P7S IPAN60R360P7S IPD60R360P7S IPAW60R360P7S IPN60R360P7S
600 IPA60R600P7S IPAN60R600P7S IPD60R600P7S IPAW60R600P7S IPN60R600P7S
*Coming soon
600 V CoolMOS™ P7 ACTIVE & PREFERRED
Industrial grade
RDS(on)
[mΩ]
TO -220 TO-220 FullPAK TO-247 TO-247 4-pin
asymmetric leads
TO-252
(DPAK)
TO-220 FullPAK
Wide Creepage
ThinPAK 8x8 D
2
PAK
24 IPW60R024P7 IPZA60R024P7
37 IPW60R037P7 IPZA60R037P7
45 IPW60R045P7 IPZA60R045P7 IPB60R045P7
60 IPP60R060P7 IPA60R060P7 IPW60R060P7 IPZA60R060P7 IPB60R060P7
65 IPL60R065P7
80 IPP60R080P7 IPA60R080P7 IPW60R080P7 IPZA60R080P7 IPL60R085P7 IPB60R080P7
99 IPP60R099P7 IPA60R099P7 IPW60R099P7 IPZA60R099P7 IPB60R099P7
105 IPL60R105P7
120 IPP60R120P7 IPA60R120P7 IPW60R120P7 IPZA60R120P7 IPB60R120P7
125 IPL60R125P7
160 IPP60R160P7 IPA60R160P7
180 IPP60R180P7 IPA60R180P7 IPW60R180P7 IPZA60R180P7 IPD60R180P7 IPB60R180P7
185 IPL60R185P7
280 IPP60R280P7 IPA60R280P7 IPD60R280P7 IPB60R280P7
285 IPL60R285P7
360 IPP60R360P7 IPA60R360P7 IPD60R360P7 IPB60R360P7
365 IPL60R365P7
600 IPP60R600P7 IPA60R600P7 IPD60R600P7
Charger
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
111
CoolMOS™ product portfolio
600V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 FullPAK TO-220 FullPAK
Wide Creepage
TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPAW60R190CE
280 IPAW60R280CE
380 IPAW60R380CE
400 IPA60R400CE IPD60R400CE IPS60R400CE
460 IPA60R460CE IPD60R460CE IPS60R460CE
600 IPAW60R600CE
650 IPA60R650CE IPD60R650CE IPS60R650CE IPAN60R650CE
800 IPD60R800CE IPS60R800CE IPAN60R800CE
1000 IPA60R1K0CE IPD60R1K0CE IPU60R1K0CE IPS60R1K0CE IPN60R1K0CE
1500 IPA60R1K5CE IPD60R1K5CE IPU60R1K5CE IPS60R1K5CE IPN60R1K5CE
2100 IPD60R2K1CE IPU60R2K1CE IPS60R2K1CE IPN60R2K1CE
3400 IPD60R3K4CE IPS60R3K4CE IPN60R3K4CE
500V CoolMOS™ CE ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPP50R190CE IPA50R190CE
280 IPP50R280CE IPA50R280CE IPD50R280CE
380 IPP50R380CE IPA50R380CE IPD50R380CE
500 IPA50R500CE IPD50R500CE IPAN50R500CE
650 IPD50R650CE IPN50R650CE
800 IPA50R800CE IPD50R800CE IPN50R800CE
950 IPA50R950CE IPD50R950CE IPN50R950CE
1400 IPD50R1K4CE IPN50R1K4CE
2000 IPD50R2K0CE IPN50R2K0CE
3000 IPD50R3K0CE IPN50R3K0CE
www.infineon.com/coolmos
www.infineon.com/ce www.infineon.com/500v-ce
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
113
CoolMOS™ product portfolio
600V CoolMOS™ P6 ACTIVE
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 5x6 ThinPAK 8x8
41 IPW60R041P6
70 IPW60R070P6 IPZ60R070P6
99 IPP60R099P6 IPA60R099P6 IPW60R099P6 IPZ60R099P6
125 IPP60R125P6 IPA60R125P6 IPW60R125P6
160 IPP60R160P6 IPA60R160P6 IPW60R160P6
180 IPL60R180P6
190 IPP60R190P6 IPA60R190P6 IPW60R190P6
210 IPL60R210P6
230 IPA60R230P6
255
280 IPP60R280P6 IPA60R280P6 IPW60R280P6
330/360 IPL60R360P6S
380 IPA60R380P6 IPD60R380P6
600 IPA60R600P6 IPD60R600P6
650 IPL60R650P6S
www.infineon.com/coolmos
www.infineon.com/c7 www.infineon.com/p6
600V CoolMOS™ C7 ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-263
(D
2
PAK)
TO-220 FullPAK TO-247 TO-247 4-pin TO-252
(DPAK)
ThinPAK 8x8
17 IPW60R017C7 IPZ60R017C7
40 IPP60R040C7 IPB60R040C7 IPW60R040C7 IPZ60R040C7
60 IPP60R060C7 IPB60R060C7 IPA60R060C7 IPW60R060C7 IPZ60R060C7
65 IPL60R065C7
99 IPP60R099C7 IPB60R099C7 IPA60R099C7 IPW60R099C7 IPZ60R099C7
104 IPL60R104C7
120 IPP60R120C7 IPB60R120C7 IPA60R120C7 IPW60R120C7
125 IPL60R125C7
180 IPP60R180C7 IPB60R180C7 IPA60R180C7 IPW60R180C7 IPD60R180C7
185 IPL60R185C7
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
112
113
CoolMOS™ product portfolio
600V CoolMOS™ CE ACTIVE
Charger
RDS(on)
[mΩ]
TO-220 FullPAK TO-220 FullPAK
Wide Creepage
TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPAW60R190CE
280 IPAW60R280CE
380 IPAW60R380CE
400 IPA60R400CE IPD60R400CE IPS60R400CE
460 IPA60R460CE IPD60R460CE IPS60R460CE
600 IPAW60R600CE
650 IPA60R650CE IPD60R650CE IPS60R650CE IPAN60R650CE
800 IPD60R800CE IPS60R800CE IPAN60R800CE
1000 IPA60R1K0CE IPD60R1K0CE IPU60R1K0CE IPS60R1K0CE IPN60R1K0CE
1500 IPA60R1K5CE IPD60R1K5CE IPU60R1K5CE IPS60R1K5CE IPN60R1K5CE
2100 IPD60R2K1CE IPU60R2K1CE IPS60R2K1CE IPN60R2K1CE
3400 IPD60R3K4CE IPS60R3K4CE IPN60R3K4CE
500V CoolMOS™ CE ACTIVE & PREFERRED
RDS(on)
[mΩ]
TO-220 TO-220 FullPAK TO-247 TO-252
(DPAK)
TO-251
(IPAK)
TO-251
(IPAK Short Lead)
SOT-223 TO-220 FullPAK
Narrow Lead
190 IPP50R190CE IPA50R190CE
280 IPP50R280CE IPA50R280CE IPD50R280CE
380 IPP50R380CE IPA50R380CE IPD50R380CE
500 IPA50R500CE IPD50R500CE IPAN50R500CE
650 IPD50R650CE IPN50R650CE
800 IPA50R800CE IPD50R800CE IPN50R800CE
950 IPA50R950CE IPD50R950CE IPN50R950CE
1400 IPD50R1K4CE IPN50R1K4CE
2000 IPD50R2K0CE IPN50R2K0CE
3000 IPD50R3K0CE IPN50R3K0CE
www.infineon.com/coolmos
www.infineon.com/ce www.infineon.com/500v-ce
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
113
CoolMOS™ product portfolio
www.infineon.com/coolmos-latest-packages
CoolMOS™ SJ MOSFETs – packages
TO-247
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
P7 24/37/45 60/80 99/120 180
C7 17/40 60 99/120 180
P6 41 70 99/125 160/190 280
CFD7 31/40/55 70 90/125 170
CPA 45 75 99
650
C7 19/45 65 95/125 190
CFD2 41 80 110 150/190 420
CFDA 48 80 110 150/190
800 P7 280 360
C3 85 290 450
900 C3 120 340 500
SOT-223
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 650/800 950/1400 2000/3000
600 P7 360 600
CE 1000/1500 2100/3400
650 CE 1500
700 P7 360 450/600 700
900/1200/1400
2000
CE
1000/1500/2100
800 P7 650/750
900/1200/1400
2000/2400/
3300/4500
950 P7 1200 2000/3700
TO-247 4-pin
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 C7 17/40 60 99
P6 70 99
650 C7 19/45 65 95
TO-247 4-pin asymmetric leads
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P7 24/37/45 60/80 99/120 180
IPAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CE 1000/1500 2100
800
P7 600 750
900/1200/1400
2000/2400
3300/4500
CE 1000
950 P7 450 750 1200 2000/3700
ACTIVE & PREFERRED
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
115
CoolMOS™ product portfolio
www.infineon.com/coolmos
www.infineon.com/coolmos-automotive
www.infineon.com/cfda
CoolMOS™ SJ MOSFET automotive
600V CoolMOS™ CPA ACTIVE
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPB60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-263
IPB60R199CPA 199 16 51 2.5 … 3.5 32 0.9 TO-263
IPB60R299CPA 299 11 34 2.5 … 3.5 22 1.3 TO-263
IPP60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-220
IPW60R045CPA 45 60 230 2.5 … 3.5 150 0.29 TO-247
IPW60R075CPA 75 39 130 2.5 … 3.5 87 0.4 TO-247
IPW60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-247
IPI60R099CPA 99 31 93 2.5 … 3.5 60 0.5 TO-262
800V CoolMOS™ C3A ACTIVE & PREFERRED
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPD80R2K7C3A 2700 2 6 2.1 … 3.9 12 3 TO-252
IPB80R290C3A 290 17 51 2.1 … 3.9 91 0.55 TO-263
IPW80R290C3A 290 17 51 2.1 … 3.9 91 0.55 TO-247
650V CoolMOS™ CFDA ACTIVE & PREFERRED
Product type RDS(on) @ TJ = 25°C
VGS = 10V
[mΩ]
ID,max. @ TJ = 25°C
[A]
ID_puls,max.
[A]
VGS(th),min.-max.
[V]
QG,typ.
[nC]
RthJC,max.
[K/W]
Package
IPD65R420CFDA 420 8.7 27 3.5...4.5 32 1.5 TO-252
IPD65R660CFDA 660 6 17 3.5...4.5 20 2 TO-252
IPB65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-263
IPB65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-263
IPB65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-263
IPB65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-263
IPB65R660CFDA 660 6 17 3.5...4.5 20 2 TO-263
IPP65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-220
IPP65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-220
IPP65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-220
IPP65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-220
IPW65R048CFDA 48 63.3 228 3.5...4.5 27 0.25 TO-247
IPW65R080CFDA 80 43.3 127 3.5...4.5 16 0.32 TO-247
IPW65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-247
IPW65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-247
IPW65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-247
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
114
115
CoolMOS™ product portfolio
www.infineon.com/coolmos-latest-packages
CoolMOS™ SJ MOSFETs – packages
TO-247
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
P7 24/37/45 60/80 99/120 180
C7 17/40 60 99/120 180
P6 41 70 99/125 160/190 280
CFD7 31/40/55 70 90/125 170
CPA 45 75 99
650
C7 19/45 65 95/125 190
CFD2 41 80 110 150/190 420
CFDA 48 80 110 150/190
800 P7 280 360
C3 85 290 450
900 C3 120 340 500
SOT-223
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 650/800 950/1400 2000/3000
600 P7 360 600
CE 1000/1500 2100/3400
650 CE 1500
700 P7 360 450/600 700
900/1200/1400
2000
CE
1000/1500/2100
800 P7 650/750
900/1200/1400
2000/2400/
3300/4500
950 P7 1200 2000/3700
TO-247 4-pin
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 C7 17/40 60 99
P6 70 99
650 C7 19/45 65 95
TO-247 4-pin asymmetric leads
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P7 24/37/45 60/80 99/120 180
IPAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CE 1000/1500 2100
800
P7 600 750
900/1200/1400
2000/2400
3300/4500
CE 1000
950 P7 450 750 1200 2000/3700
ACTIVE & PREFERRED
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
115
CoolMOS™ product portfolio
TO-220 FullPAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 190 280 380 500 800 950
600
P7 60/80 99/120 160/180 280 360 600
C7 60 99/120 180
CE 400 460 650 1000/1500
CFD7 125 170 280 360*
P6 99/125 160/190 230/280 380 600
650
C7 45 65 95/125 190 225
CE 400 650 1000/1500
CFD2 110 150/190 310 420 660
700 P7 360 450/600 750 900
800
P7 280 360 450/600 750
900/1200/1400
C3 290 450 650 900/1300 2700
CE 310 460 650 1000/1400
900 C3 340 500 800 1000/1200
950 P7 450 750 1200
TO-220 FullPAK Narrow Lead
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 500
600 CE 650/800
P7 180 280 360 600
650 CE 650
700 P7 360 450/600 750 900
800 P7 280 360 450
Double DPAK (DDPAK)
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 50 80 102/125 150/190
TO-leadless
RDS(on) group [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 28/50 80 102/125 150
650 G7 33 105 195
D²PAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
C7 40 60 99/120 180
P7 45 60/80 99/120 180 280 360
CPA 99 199 299
CFD7 40*
55*
70* 20*/105*
125*/145*
170* 210*
280*
360*
650
C7 45 65 95/125 190 225
CFD2 110 150/190 310
CFDA 110 150/190 310 660
800 C3 290
900 C3 340
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
*Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
117
CoolMOS™ product portfolio
IPAK Short Lead
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CE 400 460 650/800 1000/1500 2100/3400
650 CE 400 650 1000
700 P7 360/600 900/1400
CE 950/1400 2000
800 P7 600 750
900/1200/1400
2000/2400
IPAK Short Lead with ISO Stando
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
700 P7 360 450/600 750
900/1200/1400
2000
CE 600 950/1400 2000
DPAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 280 380 500 650/800 950/1400 2000/3000
600
P7 180 280 360 600
C7 180
CE 400 460 650/800 1000/1500 2100/3400
P6 380 600
CFD7 170 280 360*
650
C7 190 225
CE 400 650 1000/1500
CFD2 420 660 950/1400
CFDA 420 660
700 P7 360 600 900/1400
CE 600 950/1400 2000
800
P7 280 360 450/600 750
900/1200/1400
2000/2400
3300/4500
C3 900/1300 2700
CE 1000/1400 2800
900 C3 1200
950 P7 450 750 1200 2000
I²PAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 CPA 99
650 CFD2 199
700 CE 950
900 C3 340 500 1200
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
*Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
116
117
CoolMOS™ product portfolio
TO-220 FullPAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 190 280 380 500 800 950
600
P7 60/80 99/120 160/180 280 360 600
C7 60 99/120 180
CE 400 460 650 1000/1500
CFD7 125 170 280 360*
P6 99/125 160/190 230/280 380 600
650
C7 45 65 95/125 190 225
CE 400 650 1000/1500
CFD2 110 150/190 310 420 660
700 P7 360 450/600 750 900
800
P7 280 360 450/600 750
900/1200/1400
C3 290 450 650 900/1300 2700
CE 310 460 650 1000/1400
900 C3 340 500 800 1000/1200
950 P7 450 750 1200
TO-220 FullPAK Narrow Lead
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 500
600 CE 650/800
P7 180 280 360 600
650 CE 650
700 P7 360 450/600 750 900
800 P7 280 360 450
Double DPAK (DDPAK)
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 50 80 102/125 150/190
TO-leadless
RDS(on) group [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 G7 28/50 80 102/125 150
650 G7 33 105 195
D²PAK
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
C7 40 60 99/120 180
P7 45 60/80 99/120 180 280 360
CPA 99 199 299
CFD7 40*
55*
70* 20*/105*
125*/145*
170* 210*
280*
360*
650
C7 45 65 95/125 190 225
CFD2 110 150/190 310
CFDA 110 150/190 310 660
800 C3 290
900 C3 340
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
*Coming soon
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XENSIV™ sensors Applications
117
CoolMOS™ product portfolio
Power MOSFETs (from October 2015 onwards)
Power MOSFETs (until 2005)
Nomenclature
SPP20N60 C3
Company
S = Formerly Siemens
Device
P = Power MOSFET
Continuous drain current
(@ TC = 25°C) [A]
Package type
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
N
= SOT-223
P
= TO-220
U
= TO-251 (IPAK)
W
= TO-247
Z = TO-247 4-pin
Breakdown voltage
Divided by 10 (60x10 = 600 V)
Specifications
C3 = CoolMOSTM C3
S5 = CoolMOSTM S5
Technology
N = N-channel transistors
IPDD 80 R190 P7
Company
I = Infineon
Device
P = Power MOSFET
Breakdown voltage
Divided by 10 (80x10 = 800 V)
Package type (max. 2 digits)
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
C
= Bare die
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
L
= ThinPAK 8x8
N
= SOT-223
P
= TO-220
S
= TO-251 (IPAK Short Lead)
U
= TO-251 (IPAK Long Lead)
W
= TO-247
Z
= TO-247 4-pin
T
= TO-Leadless
DD
= TO-252 (Double DPAK)
AW
= TO-220 (Wide Creepage)
AN
= TO-220 (Narrow Lead)
LS
= ThinPAK 5x6
LK
= ThinPAK 5x6 Kelvin source
DQ
= TO-252 (Quadruple DPAK)
SA
= TO-251 (IPAK Short Lead with ISO Stando)
ZA
= TO-247 4-pin asymmetric
Series name (2-4 digits)
In this case CoolMOS™ P7
(max. digits e.g. CFD7)
Reliability grade
blank = Industrial
A = Automotive
S = Standard
R = RDS(on)
As a seperator between voltage und R
DS(on)
RDS(on) [mΩ]
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
119
CoolMOS™ nomenclature
TO-220
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
500 CE 190 280 380
600
P7 60/80 99/120 160/180 280 360 600
C7 40 60 99/120 180
P6 99/125 160/190 280
CFD7 70 90/125 170 280 360*
CPA 99
650
C7 45 65 95/125 190 225
CFD2 110 150/190 310 420
CFDA 110 150/190 310 660
800 P7 280 360 450/600 750
900/1200/1400
C3 290 450 650 900/1300
900 C3 340 800 1000/1200
ThinPAK 8x8
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600
P7 65/85 105/125 185 285 365
C7 65 104/125 185
CFD7 75 185 225*
P6 180 210
650 C7 70 99/130 195 230
CFD2 165 210 340
ThinPAK 5x6
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P6 360 650
700 P7 600 750
900/1200/1400
2000
800 P7 600 750
900/1200/1400
2000
TO-220 FullPAK Wide Creepage
RDS(on) [mΩ]
Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500
600 P7 180 280 360 600
CE 190 280 380 600
700 CE 600 950
www.infineon.com/coolmos-latest-packages
ACTIVE & PREFERRED
*Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
118
119
CoolMOS™ product portfolio
Power MOSFETs (from October 2015 onwards)
Power MOSFETs (until 2005)
Nomenclature
SPP20N60 C3
Company
S = Formerly Siemens
Device
P = Power MOSFET
Continuous drain current
(@ TC = 25°C) [A]
Package type
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
N
= SOT-223
P
= TO-220
U
= TO-251 (IPAK)
W
= TO-247
Z = TO-247 4-pin
Breakdown voltage
Divided by 10 (60x10 = 600 V)
Specifications
C3 = CoolMOSTM C3
S5 = CoolMOSTM S5
Technology
N = N-channel transistors
IPDD 80 R190 P7
Company
I = Infineon
Device
P = Power MOSFET
Breakdown voltage
Divided by 10 (80x10 = 800 V)
Package type (max. 2 digits)
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
C
= Bare die
D
= TO-252 (DPAK)
I
= TO-262 (I2PAK)
L
= ThinPAK 8x8
N
= SOT-223
P
= TO-220
S
= TO-251 (IPAK Short Lead)
U
= TO-251 (IPAK Long Lead)
W
= TO-247
Z
= TO-247 4-pin
T
= TO-Leadless
DD
= TO-252 (Double DPAK)
AW
= TO-220 (Wide Creepage)
AN
= TO-220 (Narrow Lead)
LS
= ThinPAK 5x6
LK
= ThinPAK 5x6 Kelvin source
DQ
= TO-252 (Quadruple DPAK)
SA
= TO-251 (IPAK Short Lead with ISO Stando)
ZA
= TO-247 4-pin asymmetric
Series name (2-4 digits)
In this case CoolMOS™ P7
(max. digits e.g. CFD7)
Reliability grade
blank = Industrial
A = Automotive
S = Standard
R = RDS(on)
As a seperator between voltage und R
DS(on)
RDS(on) [mΩ]
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
119
CoolMOS™ nomenclature
Further information, datasheets and documents
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages
www.infineon.com/coolmos-automotive
www.infineon.com/gan
Evaluationboards and simulation models
www.infineon.com/coolmos-boards
www.infineon.com/powermosfet-simulationmodels
Videos
www.infineon.com/mediacenter
Infineon support for high voltage MOSFETs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
High voltage MOSFETs support
Automotive MOSFETs
CoolGaN™
IPP60R099 CPA
Packa
ge type
B
= PG-TO-263 (D2PAK)
I
= PG-TO-262 (I2PAK)
P
= PG-TO-220
W = PG-TO-247
Automotive
Series name
CoolMOS™ CP and CoolMOS™ CFD
Company
I
= Infineon
Device
P
= Power MOSFET
Breakdown voltage
Divided by 10 (60x10 = 600 V)
RDS(on) [mΩ]
R = RDS(on)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
120
CoolMOS™ nomenclature
Further information, datasheets and documents
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages
www.infineon.com/coolmos-automotive
www.infineon.com/gan
Evaluationboards and simulation models
www.infineon.com/coolmos-boards
www.infineon.com/powermosfet-simulationmodels
Videos
www.infineon.com/mediacenter
Infineon support for high voltage MOSFETs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
High voltage MOSFETs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
123
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
122
123
Wide bandgap semiconductors
Gallium nitride (GaN) and silicon carbide (SiC)
The key to the next essential step towards an energy-eicient world is to use new materials, such as wide bandgap
semiconductors that allow for greater power eiciency, smaller size, lighter weight, lower overall cost – or all of these
together. Infineon Technologies, with its unique market position of being currently the only company oering silicon
(Si),silicon carbide (SiC)andgallium nitride (GaN)devices, is the customer’s first choice in all segments.
CoolGaN™ – ultimate eiciency and reliability
Compared to silicon (Si), the breakdown field of Infineon’s CoolGaN™ enhancement mode (e-mode) HEMTs is ten times
higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and
the reverse recovery charge is almost zero which is key to high frequency operations. GaN is the best-suited technology
in hard switching as well as resonant topologies, and is enabling new approaches in current modulation. Infineon’s GaN
solution is based on the most robust and performing concept in the market – the enhancement mode concept - oering
fast turn-on and turn-o speed. CoolGaN™ products focus on high performance and robustness, and add significant
value to a broad variety of systems across many applications such as server, telecom, hyperscale data centers, wireless
charging, adapter/charger, and audio. CoolGaN™ switches are easy to design-in with the matching GaN EiceDRIVER™ gate
driver ICs from Infineon.
CoolSiC™ - revolution to rely on
Silicon carbide (SiC) has a wide bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared
to silicon. SiC-based MOSFETs are best-suited for high-breakdown, high-power applications that operate at higher
frequencies compared to traditional IGBTs. CoolSiC™ MOSFETs come along with a fast internal freewheeling diode, thus
making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very
low, temperature-independent switching and low conduction losses, especially under partial load conditions. Based
on proven, high quality volume manufacturing, Infineon’s CoolSiC™ solutions combine revolutionary technology with
benchmark reliability – for our customers’ success today and tomorrow. The oering is completed by selected driver ICs
based on Infineon’s successful coreless transformer technology.
www.infineon.com/wbg
Wide bandgap semiconductors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
123
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
125
CoolGaN™
CoolGaN™ 400 V and 600 V e-mode GaN HEMTs –
bringing GaN technology to the next level
Infineon’s CoolGaN™ 400 V* and 600 V e-mode HEMTs enable more than 98 percent system eiciency and help
customers to make their end products smaller and lighter. Driving enhancement mode devices requires some
additional features when choosing the correct gate driver IC, however CoolGaN™ technology does not require
customized ICs. Infineon oers three new members of a single-channel galvanic isolated gate driver IC family. The
new components are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diode input characteristic) and low
threshold voltage, such as CoolGaN™.
Complete support of all requirements specific to e-mode GaN HEMTs operation:
› Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Resistor programmable gate current for steady on-state (typically 10 mA)
› Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges
Block diagram: high-eiciency GaN switched mode power supply (SMPS)
www.infineon.com/gan
* Coming soon
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
EiceDRIVER™
2EDF7275
GaN EiceDRIVER™
1EDF5673*
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
124
125
CoolGaN™
CoolGaN™ e-mode HEMTs
Tailor-made for the highest eiciency and power density in switch mode power supplies
In comparison to the next best silicon alternative, CoolGaN™ enables higher power density and the highest eiciency,
especially in the partial load range, through novel topologies such as the CCM totem pole PFC stage. GaN e-mode HEMT
performance features low reverse recovery charge and excellent dynamic performance in reverse conduction
compared to silicon FET solutions. This enables more eicient operation at established frequencies, and much higher
frequency operation which can improve power density by shrinking the size of passive components. CoolGaN™
enables doubled output power in a given energy storage slot size, freeing up space and realizing higher eiciency at
the same time.
Infineon’s CoolGaN™ comes with industry leading reliability. During the quality management process, it is not only the
device which is thoroughly tested but also its behavior in the application environment. The performance of CoolGaN™
goes beyond other GaN products in the market.
Infineon leverages its unique portfolio of high and low voltage MOSFETs, driver ICs and digital controllers to
complement its CoolGaN™ product line, thus enabling full exploit for GaN benefits.
CoolGaN™ e-mode HEMTs overview
Features
› Low output charge and
gate charge
› No reverse recovery charge
Design benefits
› High power density, small and
light design
› High eiciency in resonant circuits
› New topologies and current
modulation
› Fast and (near-)lossless switching
Advantages
› Operational expenses (OPEX)
and capital expenditure (CAPEX)
reduction
› BOM and overall cost savings
600 V CoolGaN™ e-mode HEMTs
1EDF5673K
400 V CoolGaN™ e-mode HEMTs*
1EDF5673F 1EDS5663H
CoolGaN™ e-mode HEMTs
Perfect fit for enhancement mode GaN HEMTs
Single-channel functional and reinforced isolated gate-driver ICs for enhancement mode GaN HEMTs
www.infineon.com/gan
* Coming soon
The highest quality
The qualification of GaN switches requires a dedicated
approach, well beyond existing silicon standards
› Infineon qualifies GaN devices well beyond
industry standards
› Application profiles are an integral part of
the qualification
› Failure models, based on accelerated test conditions,
ensure target lifetime and quality are met
› Infineon sets the next level of wide bandgap quality
Application
profile
Degradation
models
Qualification plan
Rel. investigation at
development phase
QRP – quality
requirement profile
Released
product
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
125
CoolGaN™
CoolGaN™ 400 V and 600 V e-mode GaN HEMTs –
bringing GaN technology to the next level
Infineon’s CoolGaN™ 400 V* and 600 V e-mode HEMTs enable more than 98 percent system eiciency and help
customers to make their end products smaller and lighter. Driving enhancement mode devices requires some
additional features when choosing the correct gate driver IC, however CoolGaN™ technology does not require
customized ICs. Infineon oers three new members of a single-channel galvanic isolated gate driver IC family. The
new components are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diode input characteristic) and low
threshold voltage, such as CoolGaN™.
Complete support of all requirements specific to e-mode GaN HEMTs operation:
› Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
› Resistor programmable gate current for steady on-state (typically 10 mA)
› Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges
Block diagram: high-eiciency GaN switched mode power supply (SMPS)
www.infineon.com/gan
* Coming soon
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
EiceDRIVER™
2EDF7275
GaN EiceDRIVER™
1EDF5673*
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
127
600 V CoolGaN™
www.infineon.com/gan
CoolGaN™ 600 V e-mode GaN HEMTs
The highest eiciency and power density with reduced system costs
The e-mode concept oers fast turn-on and turn-o speed, as well as a better path towards integration. CoolGaN™
600 V e-mode HEMTs enable simpler and more cost-eective half-bridge topologies. As e-mode based products reach
maturity, CoolGaN™ 600 V HEMTs are gaining growing prominence thanks to their potential. The CoolGaN™ 600 V series
is manufactured according to a specific, GaN-tailored qualification process which goes far beyond the standards for
silicon power devices. CoolGaN™ 600 V is designed for datacom and server SMPS, telecom rectifiers, as well as mobile
chargers and can be used as a general switch in many other industrial and consumer applications. It is the most rugged
and reliable solution in the market. The CoolGaN™ portfolio is built around high performing SMD packages to fully
exploit the benefits of GaN.
CoolGaN™ for PFC
CoolGaN™ enables the adoption of simpler half-bridge topologies (including elimination of the lossy input bridge
rectifier). The result is record eiciency (>99%) with a potential for BOM savings.
CoolGaN™ for resonant topologies
› In resonant applications, ten times lower Qoss and QG enables
high frequency operations (>1 MHz) at the highest eiciency
levels
› Linear output capacitance leads to 8 to 10 times lower
dead time
› Devices can be easily paralleled
› Power density can be pushed even further by optimizing
the thermal performance
› CoolGaN™ enables to push the eiciency forward, thus
enabling high power density e.g., in low
power chargers
Full-bridge totem pole Demonstration board
2.5 kW totem pole PFC board:
EVAL_2500W_PFC_GAN_A
250 500 750 1000 1250 1500 1750 2000 2250 2500
99.18 99.33 99.33 99.31 99.25 99.17 99.07 99.00
98.90
98.75
Eiciency versus load (fsw = 65 kHz)*
Output power [W]
Eiciency [%]
100
99
98
97
96
Flat eiciency
> 99 % over wide load range
Measured values
All available boards within +/- 0.1%
IGO60R070D1
* No external power supplies – everything included.
Vin = 230 VAC, Vout = 390 VDC, tambient = 25 °C
Q3
400 V
AC IN
Q4
L1
Q1
Q2
› 2 x 70 mΩ CoolGaN™ in DSO-20 BSC
› 2 x 33 mΩ CoolMOS™
Applications
› Telecom
› Server
› Datacom
› Adapter and charger
› Wireless charging
› SMPS
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
126
127
400 V CoolGaN™
CoolGaN™ 400 V* e-mode GaN HEMTs
Class D output stage oering the best audio experience
CoolGaN™ 400 V enables smoother switching and more linear class D output stage by oering low/linear Coss, zero
Qrr, and normally-o switch. Ideal class D audio amplifiers oer 0 percent distortion and 100 percent eiciency. What
impairs the linearity and power loss is highly dependent on switching characteristics of the switching device. Infineon’s
CoolGaN™ 400 V breaks through the technology barrier by introducing zero reverse recovery charge in the body diode
and very small, linear input and output capacitances.
In addition, the e-mode concept oers fast turn-on and turn-o speed. This feature also simplifies pairing CoolGaN™
with the IRS20957S class D controller and therefore enables faster go-to-market.
CoolGaN™ for class D audio solutions
CoolGaN™ 400 V is tailored for premium HiFi home audio, professional, and aermarket car audio systems where end
users demand every detail of their high resolution sound tracks. These have been conventionally addressed by bulky
linear amplifiers or tube amplifiers. With CoolGaN™ 400 V as the class D output stage, audio designers will be able to
deliver the best audio experience to their prospective audio fans.
CoolGaN™ 400 V devices in PG-DSO-20-87 and PG-TOLL package have been tested in class D audio amplifier
applications on 300 W+300 W dual-channel system designs.
400 V CoolGaN™ benefits from the engineering expertise Infineon has made towards challenging applications, such as
telecom rectifiers and SMPS servers, where CoolGaN™ technology proved to be highly reliable. It is the most robust and
performing concept in the market. The 400 V CoolGaN™ portfolio is built around class D Audio requirements, with high
performing SMD packages to fully exploit the benefits of GaN technology.
Key features
› Ultralow and linear Coss 400 V power devices
› Zero Qrr
› E-mode transistor – normally-o switch
Key benefits
› Clean switching performance
› Narrow dead time for better THD
› Easy to use: compatible with the IRS20957S class D
audio control IC
www.infineon.com/gan
* Coming soon
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
127
600 V CoolGaN™
www.infineon.com/gan
CoolGaN™ 600 V e-mode GaN HEMTs
The highest eiciency and power density with reduced system costs
The e-mode concept oers fast turn-on and turn-o speed, as well as a better path towards integration. CoolGaN™
600 V e-mode HEMTs enable simpler and more cost-eective half-bridge topologies. As e-mode based products reach
maturity, CoolGaN™ 600 V HEMTs are gaining growing prominence thanks to their potential. The CoolGaN™ 600 V series
is manufactured according to a specific, GaN-tailored qualification process which goes far beyond the standards for
silicon power devices. CoolGaN™ 600 V is designed for datacom and server SMPS, telecom rectifiers, as well as mobile
chargers and can be used as a general switch in many other industrial and consumer applications. It is the most rugged
and reliable solution in the market. The CoolGaN™ portfolio is built around high performing SMD packages to fully
exploit the benefits of GaN.
CoolGaN™ for PFC
CoolGaN™ enables the adoption of simpler half-bridge topologies (including elimination of the lossy input bridge
rectifier). The result is record eiciency (>99%) with a potential for BOM savings.
CoolGaN™ for resonant topologies
› In resonant applications, ten times lower Qoss and QG enables
high frequency operations (>1 MHz) at the highest eiciency
levels
› Linear output capacitance leads to 8 to 10 times lower
dead time
› Devices can be easily paralleled
› Power density can be pushed even further by optimizing
the thermal performance
› CoolGaN™ enables to push the eiciency forward, thus
enabling high power density e.g., in low
power chargers
Full-bridge totem pole Demonstration board
2.5 kW totem pole PFC board:
EVAL_2500W_PFC_GAN_A
250 500 750 1000 1250 1500 1750 2000 2250 2500
99.18 99.33 99.33 99.31 99.25 99.17 99.07 99.00
98.90
98.75
Eiciency versus load (fsw = 65 kHz)*
Output power [W]
Eiciency [%]
100
99
98
97
96
Flat eiciency
> 99 % over wide load range
Measured values
All available boards within +/- 0.1%
IGO60R070D1
* No external power supplies – everything included.
Vin = 230 VAC, Vout = 390 VDC, tambient = 25 °C
Q3
400 V
AC IN
Q4
L1
Q1
Q2
› 2 x 70 mΩ CoolGaN™ in DSO-20 BSC
› 2 x 33 mΩ CoolMOS™
Applications
› Telecom
› Server
› Datacom
› Adapter and charger
› Wireless charging
› SMPS
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
129
CoolGaN™ nomenclature
IGT60R070D 1
Packag
e type
LD
= DFN 8 x 8-LSON
T
= TOLL
O
= DSO20-BSC
OT
= DSO20-TSC
Generation
1 = 1st generation
Product type
D = Discrete
S = System
Company
I
= Infineon
Technology
G
= GaN
Voltage
Divided by 10 (60x10 = 600 V)
RDS(on) [mΩ]
R = RDS(on)
Reliability grade
blank = Industrial
A
= Automotive
S = Standard
CoolGaN™
www.infineon.com/gan
Nomenclature
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
128
129
CoolGaN™ portfolio
CoolGaN™ 400 V e-mode GaN HEMTs
Package DSO-20-87
Top-side cooling
HSOF-8-3
(TO-leadless)
up to 500 W up to 200 W
70 mΩ IGOT40R070D1** IGT40R070D1**
*Standard grade
** Coming soon
GaN EiceDRIVER™ family product portfolio
Product Package Input to output isolation Propagation
delay accuracy
Typ. high level
(sourcing) out-
put resistance
Typ. low level
(sinking) out-
put resitance
SP number
Isolation class Rating Surge testing Certification
1EDF5673K LGA, 13-pin, 5x5
mm
functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 Ω 0.35 Ω SP002447622
1EDF5673F DSO, 16-pin,
150 mil
functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 Ω 0.35 Ω SP003194020
1EDS5663H DSO, 16-pin,
300 mil
reinforced VIOTM = 8 kVpk
VISO = 5.7 kVrms
VISOM > 10 kVpk VDE0884-10
UL1577
-6 ns/+7ns 0.85 Ω 0.35 Ω SP002753980
Infineon’s CoolGaN™ devices, driven by single-channel isolated gate driver ICs from the GaN EiceDRIVER™ family,
aim to unlock the full potential of GaN technology.
www.infineon.com/gan
www.infineon.com/gan-eicedriver
CoolGaN™ 600 V e-mode GaN HEMTs
DSO-20-85
Bottom-side cooling
DSO-20-87
Top-side cooling
HSOF-8-3
TO-leadless
LSON-8-1
DFN 8x8
35 mΩ IGO60R035D1** IGOT60R035D1** IGT60R035D1**
70 mΩ IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1
190 mΩ IGT60R190D1S* IGLD60R190D1**
IGT60R190D1**
340 mΩ IGLD60R340D1**
Pmax
RDS(on) max.
RDS(on)
Package
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
129
CoolGaN™ nomenclature
IGT60R070D 1
Packag
e type
LD
= DFN 8 x 8-LSON
T
= TOLL
O
= DSO20-BSC
OT
= DSO20-TSC
Generation
1 = 1st generation
Product type
D = Discrete
S = System
Company
I
= Infineon
Technology
G
= GaN
Voltage
Divided by 10 (60x10 = 600 V)
RDS(on) [mΩ]
R = RDS(on)
Reliability grade
blank = Industrial
A
= Automotive
S = Standard
CoolGaN™
www.infineon.com/gan
Nomenclature
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
131
Infineon is the world’s first SiC discrete power supplier. The long market presence and experience enable Infineon to deliver
highly reliable, industry-leading SiC performance. With over 10 years pioneering experience in developing and manufacturing
SiC diodes, Infineon’s latest CoolSiC™ Schottky diode generation 6 family sets benchmark in quality, eiciency and reliability.
CoolSiC™ Schottky diodes 650 V
CoolSiC™ Schottky diodes 650 V G6 and G5
The new CoolSiC™ Schottky diode 650 V G6 product family is built over the strong characteristics of the
previous generation G5, fully leveraging technology and process innovation to propose the best eiciency and zero
price/ performance products to date.
Foundation technology – CoolSiC™ Schottky diodes 650 V G5
The established CoolSiC™ Schottky diodes G5 product family has been optimized aer all key aspects including
junction structure, substrate and die attach. It represents a well-balanced product family which oers state-of-the-art
performance and high surge current capability at competitive cost level.
Innovation: optimized junction, substrate and die attach
Infineon’s SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high power and high
eiciency SMPS applications.
Junction: merged PN structure
On the junction level, it has an optimized merged PN
structure. Compared to competitors, Infineon’s SiC diode has
additional P-doped area, which, together with the N-doped
EPI layer, forms a PN junction diode. Thus, it is a combination
of Schottky diode and PN junction diode. Under normal
conditions it works like a standard Schottky diode. Under
abnormal conditions such as lighting, AC line drop-out, it
works like a PN junction diode. At high current level, the PN
junction diode has significantly lower forward voltage (VF)
than Schottky diode, which leads to less power dissipation,
thus significantly improving the surge current capability.
Substrate: thin wafer technology
On the substrate level, Infineon introduced thin
wafer
technology. At the later stage of our SiC diode production,
thin wafer process is used to reduce the wafer thickness
by about two-thirds, which significantly reduces the
substrate resistance contribution, thus, improving both
forward voltage (VF) and thermal performance.
Silicon carbide
Backside and
packaging
SiC substrate
Field stop layer
EPI
layer
Al
Al wire bond
Ti
110 µm
p+ p+p+
p+
p+
60
50
40
30
20
10
00 2 4 6
8
VF [V]
I
F
[A/mm
2
]
Generation 5 Generation 2, 3
0
5
10
15
20
25
30
35
40
0.00 2.00 4.00 8.00 10.00 12.00 14.00
I
F
(A)
VF (V)
Bipolar PN diode
forward characteristic
Schottky diode
forward characteristic
Combined
characteristic
surge current
RthJC=2.0 K/W RthJC=1.5 K/W
Diusion
soldering
Die attach: diusion soldering
On the backside, package level diusion soldering is
introduced, which significantly improves the thermal path
between lead frame and the diode, enhancing the thermal
performance. With the same chip size and power dissipation,
the junction temperature is reduced by 30°C.
www.infineon.com/sic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
130
131
Silicon carbide
Silicon carbide
Improve eiciency and solution costs
Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which oers a number of
attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In
particular, the much higher breakdown field strength and thermal conductivity of silicon carbide allow developing
devices which by far outperform the corresponding silicon-based ones, and enable eiciency levels unattainable
otherwise. Infineon’s portfolio of SiC devices covers 600 V and 650 V to 1200 V Schottky diodes as well as the
revolutionary CoolSiC™ MOSFET.
CoolSiC™ Schottky diodes
The dierences in material properties between silicon carbide and silicon limit the fabrication of practical silicon
unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a relatively high on-state resistance and leakage
current. In SiC, Schottky diodes can reach a much higher breakdown voltage. Infineon oers products up to 1200 V in
discrete packages and up to 1700 V in modules.
Features
› No reverse recovery
charge
› Purely capacitive
switching
› High operating
temperature
(Tj, max 175°C)
Advantages
› Low turn-o losses
› Reduction of CoolMOS™
or IGBT turn-on loss
› Switching losses
independent
from load current,
switching
speed and temperature
Benefits
› System eiciency
improvement compared
to Si diodes
› Reduced cooling
requirements
› Enabling higher
frequency/increased
power density
› Higher system reliability
due to lower operating
temperature
› Reduced EMI
Applications
› Server
› Telecom
› Solar
› UPS
› EV charging
› Energy storage
› PC power
› Motor drives
› Lighting
› CAV
Reverse recovery charge of SiC Schottky diodes versus Si-pin diodes
The majority of carrier characteristics imply no reverse recovery charge
and the only contribution to the switching losses comes from the tiny
displacement charge of capacitive nature. In the same voltage range, silicon
devices have a bipolar component resulting in much higher switching
losses. The graph shows the comparison between various 600V devices.
Improved system eiciency (PFC in CCM mode operation, full load, low line)
The fast switching characteristics of the SiC diodes provide clear eiciency
improvements at system level. The performance gap between SiC and
high-end silicon devices increases with the operating frequency.
10
8
6
4
2
0
-2
-4
-6
-8
-10
0.07 0.1 0.13 0.16 0.19 0.22 0.25
T=125°C, VDC= 400 V, IF=6 A, di/dt=200 A/µs
SiC Schottky diode
Si-pin double diode (2*300 V)
Ultrafast Si-pin diod
e
I [A]
Time [µs]
95.0
94.5
94.0
93.5
93.0
92.5
92.0
91.5
91.0
60 120 180 240
Switchting frequency [kHz]
Eiciency [%]
Infineon SiC 6 A Comp. 1 6 A Comp. 2 6 A
www.infineon.com/sic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
131
Infineon is the world’s first SiC discrete power supplier. The long market presence and experience enable Infineon to deliver
highly reliable, industry-leading SiC performance. With over 10 years pioneering experience in developing and manufacturing
SiC diodes, Infineon’s latest CoolSiC™ Schottky diode generation 6 family sets benchmark in quality, eiciency and reliability.
CoolSiC™ Schottky diodes 650 V
CoolSiC™ Schottky diodes 650 V G6 and G5
The new CoolSiC™ Schottky diode 650 V G6 product family is built over the strong characteristics of the
previous generation G5, fully leveraging technology and process innovation to propose the best eiciency and zero
price/ performance products to date.
Foundation technology – CoolSiC™ Schottky diodes 650 V G5
The established CoolSiC™ Schottky diodes G5 product family has been optimized aer all key aspects including
junction structure, substrate and die attach. It represents a well-balanced product family which oers state-of-the-art
performance and high surge current capability at competitive cost level.
Innovation: optimized junction, substrate and die attach
Infineon’s SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high power and high
eiciency SMPS applications.
Junction: merged PN structure
On the junction level, it has an optimized merged PN
structure. Compared to competitors, Infineon’s SiC diode has
additional P-doped area, which, together with the N-doped
EPI layer, forms a PN junction diode. Thus, it is a combination
of Schottky diode and PN junction diode. Under normal
conditions it works like a standard Schottky diode. Under
abnormal conditions such as lighting, AC line drop-out, it
works like a PN junction diode. At high current level, the PN
junction diode has significantly lower forward voltage (VF)
than Schottky diode, which leads to less power dissipation,
thus significantly improving the surge current capability.
Substrate: thin wafer technology
On the substrate level, Infineon introduced thin
wafer
technology. At the later stage of our SiC diode production,
thin wafer process is used to reduce the wafer thickness
by about two-thirds, which significantly reduces the
substrate resistance contribution, thus, improving both
forward voltage (VF) and thermal performance.
Silicon carbide
Backside and
packaging
SiC substrate
Field stop layer
EPI
layer
Al
Al wire bond
Ti
110 µm
p+ p+p+
p+
p+
60
50
40
30
20
10
00 2 4 6
8
VF [V]
I
F
[A/mm
2
]
Generation 5 Generation 2, 3
0
5
10
15
20
25
30
35
40
0.00 2.00 4.00 8.00 10.00 12.00 14.00
I
F
(A)
VF (V)
Bipolar PN diode
forward characteristic
Schottky diode
forward characteristic
Combined
characteristic
surge current
RthJC=2.0 K/W RthJC=1.5 K/W
Diusion
soldering
Die attach: diusion soldering
On the backside, package level diusion soldering is
introduced, which significantly improves the thermal path
between lead frame and the diode, enhancing the thermal
performance. With the same chip size and power dissipation,
the junction temperature is reduced by 30°C.
www.infineon.com/sic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
133
The best price performance
CoolSiC™ Schottky diodes G6 are the outcome of Infineon’s continuous technological and process improvements,
enabling the design and development of SiC-based products, making them more price-competitive and increasing
performance across generations. As a result, G6 is Infineon’s best price/performance CoolSiC™ Schottky diode
generation, oering the highest cost-eiciency. In addition, Infineon oers the reliability of collaborating with the
industry leader. Customers can leverage Infineon’s proven quality and supply chain reliability. They can benefit from
“one-stop-shop” advantages and maximize system performance, combining CoolSiC™ Schottky diodes with the SJ
MOSFETs of the CoolMOS™ 7 family, such as 600 V C7, 650 V C7, 600 V G7, 650 V G7 and 600 V P7.
A comprehensive portfolio
The combined G6 and G5 650 V CoolSiC™ Schottky diode portfolio oers wide choice of packages and ampere class
granularity to allow the best fit to application. G6 comes in double DPAK, the first top-side cooled surface mount
package, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved
system lifetime thanks to the reduced board temperature.
www.infineon.com/coolsic-g6
G2*
G3
G5
G6
Performance (eiciency, density)
Price
* G2 is discontinued
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
132
133
CoolSiC™ Generation 6
Infineon’s CoolSiC™ Schottky diodes enable optimum eiciency and ruggedness. Lower forward voltage (VF) means
lower conduction loss, and lower capacitive charge (Qc) means lower switching loss. Qc x VF is the figure of merit for
eiciency, and comparison indicates that the latest generation 6 products have the lowest Qc x VF on the market.
Infineon’s CoolSiC™ Schottky diodes oer a surge current robustness far better than the one oered by the most
eicient products. Thus, under abnormal conditions, this surge current capability oers excellent device robustness.
In terms of eiciency, the 8 A G6 device has been tested in CCM PFC. The maximum output power is 3.5 kW. The le
figure shows the relative eiciency at 65 kHz, while the right figure shows the relative eiciency at 130 kHz. This shows
that Infineon’s CoolSiC™ Schottky diode G6 delivers better eiciency over the full load range, keeping this advantage
even at 130 kHz, therefore meeting the needs of designers who want to increase the switching frequencies in their
designs to attain more power density.
Latest development - CoolSiC™ Schottky diodes 650 V G6
On the top of these technologies, the CoolSiC™ Schottky diodes G6 product family introduces a novel and proprietary
Schottky metal system. This contributes to the reduction of the forward voltage (VF) to levels which are diicult,
determining a measurable decrease of conduction losses.
Eiciency comparison
www.infineon.com/coolsic-g6
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-1.00
-1.02
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-1.00
-1.02
Eiciency dierence [%]
Output power [% of nominal]
Relative eiciency @ 65 kHz Relative eiciency @ 130 kHz
10 20 30 40 50 60 70 80 90 100
Eiciency dierence [%]
Output power [% of nominal]
10 20 30 40 50 60 70 80 90 100
G6 Competitor 1 Competitor 2 Competitor 3
20
16
12
8
4
0
0.5 1 1.5
2
VF [V]
IF [A]
Minimized VF
IDH08G65C6_25C IDH08G65C6_175C
IDH08G65C5_25C
rated current
IDH08G65C5_175C
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
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133
The best price performance
CoolSiC™ Schottky diodes G6 are the outcome of Infineon’s continuous technological and process improvements,
enabling the design and development of SiC-based products, making them more price-competitive and increasing
performance across generations. As a result, G6 is Infineon’s best price/performance CoolSiC™ Schottky diode
generation, oering the highest cost-eiciency. In addition, Infineon oers the reliability of collaborating with the
industry leader. Customers can leverage Infineon’s proven quality and supply chain reliability. They can benefit from
“one-stop-shop” advantages and maximize system performance, combining CoolSiC™ Schottky diodes with the SJ
MOSFETs of the CoolMOS™ 7 family, such as 600 V C7, 650 V C7, 600 V G7, 650 V G7 and 600 V P7.
A comprehensive portfolio
The combined G6 and G5 650 V CoolSiC™ Schottky diode portfolio oers wide choice of packages and ampere class
granularity to allow the best fit to application. G6 comes in double DPAK, the first top-side cooled surface mount
package, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved
system lifetime thanks to the reduced board temperature.
www.infineon.com/coolsic-g6
G2*
G3
G5
G6
Performance (eiciency, density)
Price
* G2 is discontinued
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
135
CoolSiC™ silicon carbide MOSFETs – revolution to rely on
Infineon’s CoolSiC™ technology enables radically new product designs
Silicon carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of eiciency and
system flexibility. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC MOSFET oers a
series of advantages. These include the low switching losses with 1200 V switches, very low reverse recovery losses of
the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state
characteristics. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary SiC
technology which enables radically new product designs with high performance and high reliability. CoolSiC™ MOSFET
products are targeted for photovoltaic inverters, battery charging and energy storage.
CoolSiC™ MOSFET features
› Revolutionary semiconductor material –
silicon carbide
› Very low switching losses
› Threshold-free on-state characteristic
› Wide gate-source voltage range
› Benchmark gate threshold voltage, VGS(th) = 4.5 V
› Fully controllable dV/dt
› Commutation robust body diode, ready for
synchronous rectification
› Temperature independent turn-o switching losses
Benefits
› Best-in-class system performance
› Eiciency improvement and reduced cooling eort
› Significant reduction in junction temperature for longer
lifetime and higher reliability
› Enables higher frequency operation for reduction in
system cost and shrink
› Allows for increase in power density
› Two-level topologies can replace three-level with same
eiciency for lower complexity and cost
› Excellent for hard switching and resonant switching
topologies like LLC and ZVS
www.infineon.com/coolsic-mosfet
TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference
potential for the gate driving voltage, thereby eliminating the eect of voltage drops over the source inductance. The result
is even lower switching losses than for TO-247 3-pin version, especially at higher currents and higher switching frequencies.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
134
135
CoolSiC™ Generation 5
CoolSiC™ Schottky diodes 1200 V
New level of system eiciency and reliability
By using hybrid Si power switch/SiC diode sets, designers of industrial applications will gain flexibility for system
optimization compared to purely silicon-based solutions. System improvements by higher eiciency, higher output
power or higher switching frequency are enabled by SiC diodes. Implementing CoolSiC™ diodes generation 5, for
example in Vienna rectifier topology, in combination with Infineon’s 650 V TRENCHSTOP™ IGBTs and
650 V CoolMOS™ MOSFETs, designers can achieve outstanding system level performance and reliability.
Key features of generation 5
› Low forward voltage (VF) - 1.4 V
› Mild positive temperature dependency of VF
› High surge current capability up to fourteen
times of the nominal current
› Up to 40A-rated diode
Key benefits of 1200 V generation 5
› Reduced cooling requirements through lower diode
losses and lower case temperatures
› High system reliability by extended surge current
650 V Si IGBT/Si SJ MOSFET and 1200 V SiC diode/ultrafast Si diode in a Vienna rectifier topology, fsw=48 kHz
www.infineon.com/sic
96.0
96.5
97.0
97.5
98.0
98.5
99.0
0 1000
CoolMOS™
w. SiC diode
SiC vs. Si diode
› +0.8% higher efficiency
› Increased output power is possible
w. Si diode
IGBT
CoolMOS™
IGBT
2000 3000 4000 5000
Output power [W]
650 V SJ MOSFET + 1200 V SiC diode
(IPW65R045C7 + IDW15G120C5B)
Eiciency [%]
650 V IGBT + 1200 V SiC diode
(IKW50N65EH5 + IDW15G120C5B)
650 V SJ MOSFET + 1200 V Si diode
(IPW65R045C7 + Vendor A)
650 V IGBT + 1200 V Si diode
(IKW50N65EH5 + Vendor A)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
135
CoolSiC™ silicon carbide MOSFETs – revolution to rely on
Infineon’s CoolSiC™ technology enables radically new product designs
Silicon carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of eiciency and
system flexibility. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC MOSFET oers a
series of advantages. These include the low switching losses with 1200 V switches, very low reverse recovery losses of
the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state
characteristics. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary SiC
technology which enables radically new product designs with high performance and high reliability. CoolSiC™ MOSFET
products are targeted for photovoltaic inverters, battery charging and energy storage.
CoolSiC™ MOSFET features
› Revolutionary semiconductor material –
silicon carbide
› Very low switching losses
› Threshold-free on-state characteristic
› Wide gate-source voltage range
› Benchmark gate threshold voltage, VGS(th) = 4.5 V
› Fully controllable dV/dt
› Commutation robust body diode, ready for
synchronous rectification
› Temperature independent turn-o switching losses
Benefits
› Best-in-class system performance
› Eiciency improvement and reduced cooling eort
› Significant reduction in junction temperature for longer
lifetime and higher reliability
› Enables higher frequency operation for reduction in
system cost and shrink
› Allows for increase in power density
› Two-level topologies can replace three-level with same
eiciency for lower complexity and cost
› Excellent for hard switching and resonant switching
topologies like LLC and ZVS
www.infineon.com/coolsic-mosfet
TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference
potential for the gate driving voltage, thereby eliminating the eect of voltage drops over the source inductance. The result
is even lower switching losses than for TO-247 3-pin version, especially at higher currents and higher switching frequencies.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
137
CoolSiC™ Schottky diodes 650 V G6 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 Double DPAK D2PAK R2L ThinPAK 8x8
4IDH04G65C6 IDDD04G65C6
6IDH06G65C6 IDDD06G65C6
8IDH08G65C6 IDDD08G65C6
10 IDH10G65C6 IDDD10G65C6
12 IDH12G65C6 IDDD12G65C6
16 IDH16G65C6 IDDD16G65C6
20 IDH20G65C6 IDDD20G65C6
www.infineon.com/sic
„B“ in product name refers to common-cathode configuration
CoolSiC™ Schottky diodes 1200 V G5 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 R2L DPAK R2L
2IDH02G120C5 IDM02G120C5
5IDH05G120C5 IDM02G120C5
8IDH08G120C5 IDM08G120C5
10 IDH10G120C5 IDW10G120C5B IDWD10G120C5 IDM10G120C5
15/16 IDH16G120C5 IDW15G120C5B IDWD15G120C5
20 IDH20G120C5 IDW20G120C5B IDWD20G120C5
30 IDW30G120C5B IDWD30G120C5
40 IDW40G120C5B IDWD40G120C5
CoolSiC™ Schottky diodes 650 V G3 ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 DPAK R2L D2PAK ThinPAK 8x8
3IDH03SG60C IDD03SG60C
4IDH04SG60C IDD04SG60C
5IDH05SG60C IDD05SG60C
6IDH06SG60C IDD06SG60C
8IDH08SG60C IDD08SG60C
9IDH09SG60C IDD09SG60C
10 IDH10SG60C IDD10SG60C
12 IDH12SG60C IDD12SG60C
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
136
137
SiC diodes product portfolio
www.infineon.com/sic
CoolSiC™ Schottky diodes 650 V G5 ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 D2PAK R2L ThinPAK 8x8
2IDH02G65C5 IDK02G65C5 IDL02G65C5
3IDH03G65C5 IDK03G65C5
4IDH04G65C5 IDK04G65C5 IDL04G65C5
5IDH05G65C5 IDK05G65C5
6IDH06G65C5 IDK06G65C5 IDL06G65C5
8IDH08G65C5 IDK08G65C5 IDL08G65C5
9IDH09G65C5 IDK09G65C5
10 IDH10G65C5 IDW10G65C5 IDK10G65C5 IDL10G65C5
12 IDH12G65C5 IDW12G65C5 IDK12G65C5 IDL12G65C5
16 IDH16G65C5 IDW16G65C5
20 IDH20G65C5 IDW20G65C5B IDW20G65C5
24 IDW24G65C5B
30/32 IDW32G65C5B IDW30G65C5
40 IDW40G65C5B IDW40G65C5
CoolSiC™ Schottky diodes 650 V G6 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 Double DPAK D2PAK R2L ThinPAK 8x8
4IDH04G65C6 IDDD04G65C6
6IDH06G65C6 IDDD06G65C6
8IDH08G65C6 IDDD08G65C6
10 IDH10G65C6 IDDD10G65C6
12 IDH12G65C6 IDDD12G65C6
16 IDH16G65C6 IDDD16G65C6
20 IDH20G65C6 IDDD20G65C6
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
137
CoolSiC™ Schottky diodes 650 V G6 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 Double DPAK D2PAK R2L ThinPAK 8x8
4IDH04G65C6 IDDD04G65C6
6IDH06G65C6 IDDD06G65C6
8IDH08G65C6 IDDD08G65C6
10 IDH10G65C6 IDDD10G65C6
12 IDH12G65C6 IDDD12G65C6
16 IDH16G65C6 IDDD16G65C6
20 IDH20G65C6 IDDD20G65C6
www.infineon.com/sic
„B“ in product name refers to common-cathode configuration
CoolSiC™ Schottky diodes 1200 V G5 ACTIVE & PREFERRED
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 R2L DPAK R2L
2IDH02G120C5 IDM02G120C5
5IDH05G120C5 IDM02G120C5
8IDH08G120C5 IDM08G120C5
10 IDH10G120C5 IDW10G120C5B IDWD10G120C5 IDM10G120C5
15/16 IDH16G120C5 IDW15G120C5B IDWD15G120C5
20 IDH20G120C5 IDW20G120C5B IDWD20G120C5
30 IDW30G120C5B IDWD30G120C5
40 IDW40G120C5B IDWD40G120C5
CoolSiC™ Schottky diodes 650 V G3 ACTIVE
IF
[A]
TO-220 R2L TO-247
Dual Die
TO-247 DPAK R2L D2PAK ThinPAK 8x8
3IDH03SG60C IDD03SG60C
4IDH04SG60C IDD04SG60C
5IDH05SG60C IDD05SG60C
6IDH06SG60C IDD06SG60C
8IDH08SG60C IDD08SG60C
9IDH09SG60C IDD09SG60C
10 IDH10SG60C IDD10SG60C
12 IDH12SG60C IDD12SG60C
CoolSiC™ MOSFET
Breakdown voltage
Divided by 10
120
= 1200 V
IMW120 RM145
Company
I = Infineon
Reliable grade
blank = Industrial
A = Automotive
Device
M = MOSFET
Package Type
W = TO-247
Z = TO-247 4-pin
Series name (2 digits)
M1 = Generation 1
RDS(on) [mΩ]
R = RDS(on)
As a separator between
voltage und RDS(on)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
139
SiC diodes nomenclature
www.infineon.com/sic
Nomenclature
CoolSiC™ Schottky diodes G2 and G3
Continuous forward current
[A]
IDHXSXGC
Company
I = Infineon
Specifications
C = Surge current stable
Device
D = Diode
Package Type
D = DPAK
H = TO-220 R2L
B = D2PAK
D = DPAK = TO-220
V = TO-220 FullPAK
W = TO-247
Breakdown voltage
60 = 600 V
G
= Low thermal resistance
(diffusion soldering)
Technology
S = SiC diode
CoolSiC™ Schottky diodes G5 and G6
Continuous forward current
[A]
IDWD XG CX5B
Company
I = Infineon
Series name
5 = Generation 5
6 = Generation 6
B
= Common-cathode configuration
Device
D = Diode
Package type
H = TO-220 R2L
W = TO-247
K = D2PAK R2L
L = ThinPAK 8x8
M = DPAK R2L
WD = TO-247 R2L
Specifications
C = Surge current stable*
Breakdown voltage
65 = 650 V
120 = 1200 V
G = Low thermal resistance
*Generation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
138
139
SiC diodes nomenclature
www.infineon.com/sic
CoolSiC™ MOSFET
Breakdown voltage
Divided by 10
120
= 1200 V
IMW120 RM145
Company
I = Infineon
Reliable grade
blank = Industrial
A = Automotive
Device
M = MOSFET
Package Type
W = TO-247
Z = TO-247 4-pin
Series name (2 digits)
M1 = Generation 1
RDS(on) [mΩ]
R = RDS(on)
As a separator between
voltage und RDS(on)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
139
SiC diodes nomenclature
www.infineon.com/sic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
141
Rapid 1 diodes
650V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-220
common cathode
TO-247 TO-247
common cathode
TO-247
advanced isolation
8 IDP08E65D1
15 IDP15E65D1
20 IDV20E65D1
30 IDP30E65D1 IDW30E65D1 IDW30C65D1
40 IDW40E65D1 IDFW40E65D1E
60 IDW60C65D1 IDFW60C65D1
75 IDW75D65D1
80 IDW80C65D1
Rapid 2 diodes
650
V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-220
common cathode
TO-247 TO-247
common cathode
8IDP08E65D2 IDV08E65D2
15 IDP15E65D2 IDV15E65D2 IDW15E65D2
20 IDP20E65D2 IDP20C65D2 IDW20C65D2
30 IDP30E65D2 IDV30E65D2 IDP30C65D2 IDW30C65D2
40 IDP40E65D2 IDW40E65D2
80 IDW80C65D2
www.infineon.com/rapiddiodes
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
140
141
Silicon power diodes
Filling the gap between SiC diodes and emitter controlled diodes
The Rapid diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap
between SiC diodes and previously released emitter controlled diodes. They oer a perfect cost/performance balance
and target high eiciency applications switching between 18 and 100 kHz. Rapid 1 and Rapid 2 diodes are optimized to
have excellent compatibility with CoolMOS™ and high speed IGBTs (insulated gate bipolar transistor)
such as the TRENCHSTOP™ 5 and HighSpeed 3.
The Rapid 1 diode family
Rapid 1 is forward voltage drop (VF) optimized to address low switching frequency applications between 18 kHz and
40 kHz, for example air conditioner and welder PFC stages.
› 1.35 V temperature-stable forward voltage (VF)
› Lowest peak reverse recovery current (Irrm)
› Reverse recovery time (trr) < 100 ns
› High soness factor
The Rapid 2 diode family
Rapid 2 is Qrr/trr optimized hyperfast diode to address high speed switching applications between 40 kHz and 100 kHz,
typically found in PFCs in high eiciency switch mode power supplies (SMPS) and welding machines.
› Lowest reverse recovery charge (Qrr): VF ratio for best-in-class performance
› Lowest peak reverse recovery current (Irrm)
› Reverse recovery trr < 50 ns
› High soness factor
Emitter controlled diodes
Rapid 2 SiCRapid 1
0 Hz 18 kHz 40 kHz 100 kHz >100 kHz
1000
900
800
700
600
500
400
300
200
100
0
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3
30 A competitor A
IDW30E65D1
IDP08E65D2 8 A competitor C
8 A competitor D
30 A competitor B
Q
rr
[nC]
VF [V]
V
F
- Q
rr
trade-o, Rapid 1 diF/dt = 1000 A/us, Rapid 2 diF/dt = 300 A/us
97.6
97.4
97.2
97.0
96.8
96.6
96.4
96.2
96.0
95.8
95.6
0 100 200 300 400 500 600 700 800
Eiciency [%]
Output Power [W]
IDP08E65D2
Competitor S
Competitor F
PFC Eiciency @ 60 kHz – Vin = 230 V
98.2
98.0
97.8
97.6
97.4
97.2
97.0
96.8
96.6
96.4
96.2
0 200 400 600 800 1000 1200 1400 1600
Eiciency [%]
Output Power [W]
PFC Eiciency @ 70 kHz – Vin = 230 V
Rapid 2
SiC
www.infineon.com/rapiddiodes
www.infineon.com/ultrasoftdiodes
Silicon power diodes
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
141
Rapid 1 diodes
650V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-220
common cathode
TO-247 TO-247
common cathode
TO-247
advanced isolation
8 IDP08E65D1
15 IDP15E65D1
20 IDV20E65D1
30 IDP30E65D1 IDW30E65D1 IDW30C65D1
40 IDW40E65D1 IDFW40E65D1E
60 IDW60C65D1 IDFW60C65D1
75 IDW75D65D1
80 IDW80C65D1
Rapid 2 diodes
650
V product family
Continuous
current Ic
@TC=100°C
[A]
TO-220 TO-220
FullPAK
TO-220
common cathode
TO-247 TO-247
common cathode
8IDP08E65D2 IDV08E65D2
15 IDP15E65D2 IDV15E65D2 IDW15E65D2
20 IDP20E65D2 IDP20C65D2 IDW20C65D2
30 IDP30E65D2 IDV30E65D2 IDP30C65D2 IDW30C65D2
40 IDP40E65D2 IDW40E65D2
80 IDW80C65D2
www.infineon.com/rapiddiodes
Infineon support for wide bandgap semiconductors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/wbg
www.infineon.com/sic
www.infineon.com/rapiddiodes
www.infineon.com/ultraso diodes
www.infineon.com/gan
www.infineon.com/gan-eicedriver
Videos
www.infineon.com/mediacenter
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
SiC discretes & Si diodes support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
142
Silicon power diodes
Emitter controlled diodes
600V and 1200V product families
Continuous
current Ic
@TC=100°C
[A]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220
Real 2-pin
TO-247
600V
6IDD06E60
15 IDB15E60 IDP15E60
30 IDB30E60 IDP30E60 IDW30E60
45 IDP45E60
50 IDW50E60
75 IDW75E60
100 IDW100E60
1200V
12 IDP12E120
18 IDP18E120
30 IDB30E120 IDP30E120
Nomenclature
Silicon power diodes
Company
I
= Infineon
I D
Device
D
= Diode
Package type
P
= TO-220
V
= TO-220 FullPAK
W
= TO-247
D
= TO-252 (DPAK)
B
= TO-263 (DPAK)
FW
= TO-247 Advanced Isolation
D1 = Rapid 1
D2 = Rapid 2
W 75 E65D1
Nominal
current
(@ 100°C) [A]
Nominal voltage
Divided by 10 (650 V/10 = 65)
Technology
E = Std. diode configuration
– replacement for FullP
AK
packagesorTO-247 +
mediumperformance
insulator
C = Common cathode
D = Dual anode
www.infineon.com/ultrasodiodes
Infineon support for wide bandgap semiconductors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/wbg
www.infineon.com/sic
www.infineon.com/rapiddiodes
www.infineon.com/ultraso diodes
www.infineon.com/gan
www.infineon.com/gan-eicedriver
Videos
www.infineon.com/mediacenter
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
SiC discretes & Si diodes support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
145
TRENCHSTOP™ 5 L5
Best-in-class IGBT low VCE(sat) IGBT
VCE(sat) IGBT – 1.05 V
Best trade-o VCE(sat) Vss Ets for frequencies below 20 kHz
Solar, UPS, welding
› Ultralow frequency converters
› Three-level inverter type NPC 1 and NPC 2
› Modified HERIC inverter
› AC output (aluminum/magnesium welding)
TRENCHSTOP™ 5 S5
Best-in-class ease-of-use IGBT
Elimination of:
› Collector-emitter snubber capacitor and gate capacitor in low
inductance designs (<100 nH)
› Soer switching than TRENCHSTOP™ 5 H5
UPS, battery charger, solar, welding
› Medium frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 H5/F5
Best-in-class high frequency IGBT
› Bridge to SJ MOSFET performance
› Highest eiciency, especially under light load conditions
UPS, solar, welding
› High frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 R5
Price/performance optimized
application specific IGBT
Induction cooking – RC-H5
Half-bridge topologies in induction cooking appliances and other
resonant switching applications
TRENCHSTOP™ 5 WR5
Price optimized application specific IGBT for zero current
switching (ZCS)
› Optimized full rated hard switching turn-o typically found in
welding
› Excellent RG controllability
› So recovery plus low reverse recovery charge (Qrr) for diode
Air conditioning, welding
› Medium frequency converters
› Zero-voltage switching
› PFC
650 V TRENCHSTOP™ 5
650 V TRENCHSTOP™ 5 IGBT
In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance
of the TRENCHSTOP™ 5. Wafer thickness has been reduced by more than 25 percent, which enables a dramatic
improvement in both switching and conduction losses, while providing an increased breakthrough voltage of 650V.
Based on TRENCHSTOP™ 5 IGBT technology, Infineon has developed six dierent product families optimized for
specific applications, allowing designers to optimize for high eiciency, system cost or reliability demands of the
market. The quantum leap of eiciency improvement provided by the TRENCHSTOP™ 5 IGBT families opens up new
opportunities for designers to explore.
Highest power density in D2PAK footprint
Infineon’s ultrathin TRENCHSTOP™ 5 IGBT technology allows higher power density in a smaller chip size. Infineon is the
first on the market able to fit a 40 A 650 V IGBT with 40 A diode in D2PAK – 25 percent higher than any other competitors
that are oering maximum 30 A DuoPack IGBT in D2PAK. Now it is possible to upgrade the available SMD designs for
higher power output Pout.
Key features
› The highest power density – 40 A IGBT co-packed
with a 40 A diode in D2PAK
› 25 percent higher current than any other competitor
› Superior eiciency of leading TRENCHSTOP™ 5
technology
Key benefits
› Higher power design with D2PAK package
› Upgrade of the available designs for higher
power output
› Less paralleling for improved system reliability and
less complexity
› Smaller PCB, more compact system design, lighter
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
150 kHz
TRENCHSTOP™ 5 L5 (hard switching)
TRENCHSTOP™ 5 S5 (hard switching)
TRENCHSTOP™ 5 WR5 (resonant switching)
RC-H5 (resonant switching)
TRENCHSTOP™ 5 H5 (hard switching)
TRENCHSTOP™ 5 F5 (hard switching)
www.infineon.com/trenchstop5
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
144
145
Discrete IGBTs
Discrete IGBTs
Market leadership through groundbreaking innovation and application focus
Resolute to achieve the highest standards in performance and quality, Infineon oers a comprehensive portfolio of
application-specific discrete IGBTs.
Discrete IGBT overview
New best-in-class technologies and applications
Technology Application
TRENCHSTOP™ 5
H5/F5 650V
TRENCHSTOP™ 5
L5 650V
Rapid diode
650V
RC-H5
650V/1200V/1350V
RC-E
1200V
WR5
650V
RC-drives
RC-drives fast
600V
TRENCHSTOP™ 5
S5 650V
TRENCHSTOP™
IGBT6 650 V
TRENCHSTOP™
IGBT6 1200 V
www.infineon.com/igbtdiscretes
P-SOT-223-4 SMD
SMD,
single transistor,
small signal
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-220
FullPAK
TO-247 TO-247
4-pin
TO-
247PLUS
TO-
247PLUS
4-pin
TRENCHSTOP™
advanced
isolation TO-247
Package options
Voltage class 600V, 650V, 1100V, 1200V, 1350V, 1600V 600 V, 650 V
Configuration
DuoPack (with diode), single IGBTs Duopack IGBTs
(with diode) and
diodes
Continuous coll-
ector current TC =
100°C
2-120 A 40-90 A
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
145
TRENCHSTOP™ 5 L5
Best-in-class IGBT low VCE(sat) IGBT
VCE(sat) IGBT – 1.05 V
Best trade-o VCE(sat) Vss Ets for frequencies below 20 kHz
Solar, UPS, welding
› Ultralow frequency converters
› Three-level inverter type  NPC 1 and NPC 2
› Modified HERIC inverter
› AC output (aluminum/magnesium welding)
TRENCHSTOP™ 5 S5
Best-in-class ease-of-use IGBT
Elimination of:
› Collector-emitter snubber capacitor and gate capacitor in low
inductance designs (<100 nH)
› Soer switching than TRENCHSTOP™ 5 H5
UPS, battery charger, solar, welding
› Medium frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 H5/F5
Best-in-class high frequency IGBT
› Bridge to SJ MOSFET performance
› Highest eiciency, especially under light load conditions
UPS, solar, welding
› High frequency converters
› Multilevel inverter stages
› Output stages
› PFC
TRENCHSTOP™ 5 R5
Price/performance optimized
application specific IGBT
Induction cooking – RC-H5
Half-bridge topologies in induction cooking appliances and other
resonant switching applications
TRENCHSTOP™ 5 WR5
Price optimized application specific IGBT for zero current
switching (ZCS)
› Optimized full rated hard switching turn-o typically found in
welding
› Excellent RG controllability
› So recovery plus low reverse recovery charge (Qrr) for diode
Air conditioning, welding
› Medium frequency converters
› Zero-voltage switching
› PFC
650 V TRENCHSTOP™ 5
650 V TRENCHSTOP™ 5 IGBT
In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance
of the TRENCHSTOP™ 5. Wafer thickness has been reduced by more than 25 percent, which enables a dramatic
improvement in both switching and conduction losses, while providing an increased breakthrough voltage of 650V.
Based on TRENCHSTOP™ 5 IGBT technology, Infineon has developed six dierent product families optimized for
specific applications, allowing designers to optimize for high eiciency, system cost or reliability demands of the
market. The quantum leap of eiciency improvement provided by the TRENCHSTOP™ 5 IGBT families opens up new
opportunities for designers to explore.
Highest power density in D2PAK footprint
Infineon’s ultrathin TRENCHSTOP™ 5 IGBT technology allows higher power density in a smaller chip size. Infineon is the
first on the market able to fit a 40 A 650 V IGBT with 40 A diode in D2PAK – 25 percent higher than any other competitors
that are oering maximum 30 A DuoPack IGBT in D2PAK. Now it is possible to upgrade the available SMD designs for
higher power output Pout.
Key features
› The highest power density – 40 A IGBT co-packed
with a 40 A diode in D2PAK
› 25 percent higher current than any other competitor
› Superior eiciency of leading TRENCHSTOP™ 5
technology
Key benefits
› Higher power design with D2PAK package
› Upgrade of the available designs for higher
power output
› Less paralleling for improved system reliability and
less complexity
› Smaller PCB, more compact system design, lighter
10 20 30 40 50 60 70 80 90 100 110 120 130 140
TRENCHSTOP™ 5 L5 (hard switching)
TRENCHSTOP™ 5 S5 (hard switching)
TRENCHSTOP™ 5 WR5 (resonant switching)
RC-H5 (resonant switching)
TRENCHSTOP™ 5 H5 (hard switching)
TRENCHSTOP™ 5 F5 (hard switching)
www.infineon.com/trenchstop5
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
147
www.infineon.com/igbt6
TRENCHSTOP™ IGBT6
650 V trench and field-stop IGBT for low power motor drives
Motor drives up to 1 kW are used in a wide variety of applications from home appliance fans and compressors to
commercial sewing machines and pumps. The market for these products demands longer lifetimes, high reliability and
high eiciency. Therefore, these compact motors require power electronics with the lowest losses and best thermal
performance.
The TRENCHSTOP™ IGBT6 family of discrete devices has been designed to meet these specific requirements of motor
drives. It has been optimized for the lowest switching losses, which is particularly important in systems with higher
switching frequencies up to 30 kHz. Additionally, the IGBTs are co-packed with the so, fast recovery Rapid 1
anti-parallel
diodes for the lowest total losses.
With a higher blocking voltage at 650 V, and short circuit rating, TRENCHSTOP™ IGBT6 is a key contributor to robust
motor designs.
The devices are oered in TO-220 FullPAK packages for the required isolation, as well as DPAK for a more compact
surface mount solution.
› Optimized for small drives requiring best-in-class eiciency
› Up to 20 percent reduction in total losses
› Lowest switching losses for better heat management and easier design-in
Key features
› Lowest collector-emitter saturation voltage (VCE(sat))
and forward voltage (VF)
› 650 V blocking voltage
› 3 μsec short-circuit protection capability
› Optimized for switching frequencies from 8–30 kHz
Key benefits
› Good thermal performance, especially at
higher frequencies
› Low losses to meet energy eiciency requirements
› Increased design margin and reliability
› Leading price/performance
TRENCHSTOP™ IGBT6
TRENCHS
TOP™ IGBT6 IKA15N65ET6
Power losses [W]
550 W @ TA = 25°C, 10 kHz, same dv/dt
TRENCHSTOP™ IKA15N60T
Gen5 IRGIB15B60KD1P
0.5 0.75 1 1.25 1.5
1.75
Pcnd(s) [W] Pcnd(d) [W] Prec(d) [W]Pon(s) [W] Po(s) [W]
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
146
147
1200 V discrete IGBTs
1200 V IGBT families
The 1200 V TRENCHSTOP™ 2 IGBT is optimized for low conduction losses with the lowest saturation voltage VCE(sat)
of 1.75 V. A so fast recovery emitter controlled diode further minimizes the turn-on losses.
The 1200 V HighSpeed 3 discrete IGBTs provides the lowest losses and the highest reliability for switching above
20 kHz. Transition to fast switching high speed devices allows reduction in the size of the active components (25-70 kHz).
The new 1200 V IGBT generation, TRENCHSTOP™ IGBT6, is designed to meet requirements of high eiciency, lowest
conduction and switching losses in hard switching and resonant topologies, operating at switching frequencies above
15 kHz. The IGBT6 devices can be used as direct replacement for the Highspeed3 H3 series, without any changes of the
design. Such plug-and-play replacement of H3 with new S6 IGBT may benefit up to 0.2 percent eiciency improvement.
The RC-H5 family is the latest generation in the RC-H series of reverse conducting IGBT. With a monolithically integrated
diode, they oer optimized performance for resonant switching applications such as induction cooking. R5 devices are
also available in 1350V blocking voltage.
RC-H5
World-class TRENCHSTOP™ RC-H products
High performance and low losses
Induction cooking
Resonant switching
Medium to high frequency converters
RC-E
New TRENCHSTOPTM RC-E
Price versus performance leader
Induction cooking
Resonant switching
Low to medium power cookers
TRENCHSTOP™ 2
Best-in-class 1200V IGBT
› Outstanding eiciency
› Lowest conduction and switching losses
› Market proven and recognized quality leader
Motor control, general purpose inverter, solar, UPS
Low frequency converters
HighSpeed 3 H3
High speed/high power IGBT
› First tailless/low loss IGBT on market
› Market proven and recognized quality leader
Solar, UPS, welding
Medium frequency converters
TRENCHSTROP™ IGBT6
New low switching losses and high power IGBTs
› Optimized for operation at 15 – 40 kHz
› Best combination of low VCE(sat) of 1.85 V and low switching losses
UPS, solar, welding
Medium frequency converters
0
5 10 15 20 25 30 35 40 45 50 55
60 kHz
TRENCHSTOP™ R3/R5 (resonant switching)
HighSpeed 3 H3 (hard switching)
TRENCHSTOP™ 2 (hard switching)
TRENCHSTOP™ IGBT6 S6, H6 (hard switching)
TRENCHSTOP™ RC-E (resonant switching)
NEW!
www.infineon.com/rch5
www.infineon.com/rc-e
www.infineon.com/igbt6-1200v
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
147
www.infineon.com/igbt6
TRENCHSTOP™ IGBT6
650 V trench and field-stop IGBT for low power motor drives
Motor drives up to 1 kW are used in a wide variety of applications from home appliance fans and compressors to
commercial sewing machines and pumps. The market for these products demands longer lifetimes, high reliability and
high eiciency. Therefore, these compact motors require power electronics with the lowest losses and best thermal
performance.
The TRENCHSTOP™ IGBT6 family of discrete devices has been designed to meet these specific requirements of motor
drives. It has been optimized for the lowest switching losses, which is particularly important in systems with higher
switching frequencies up to 30 kHz. Additionally, the IGBTs are co-packed with the so, fast recovery Rapid 1
anti-parallel
diodes for the lowest total losses.
With a higher blocking voltage at 650 V, and short circuit rating, TRENCHSTOP™ IGBT6 is a key contributor to robust
motor designs.
The devices are oered in TO-220 FullPAK packages for the required isolation, as well as DPAK for a more compact
surface mount solution.
› Optimized for small drives requiring best-in-class eiciency
› Up to 20 percent reduction in total losses
› Lowest switching losses for better heat management and easier design-in
Key features
› Lowest collector-emitter saturation voltage (VCE(sat))
and forward voltage (VF)
› 650 V blocking voltage
› 3 μsec short-circuit protection capability
› Optimized for switching frequencies from 8–30 kHz
Key benefits
› Good thermal performance, especially at
higher frequencies
› Low losses to meet energy eiciency requirements
› Increased design margin and reliability
› Leading price/performance
TRENCHSTOP™ IGBT6
TRENCHS
TOP™ IGBT6 IKA15N65ET6
Power losses [W]
550 W @ TA = 25°C, 10 kHz, same dv/dt
TRENCHSTOP™ IKA15N60T
Gen5 IRGIB15B60KD1P
0.5 0.75 1 1.25 1.5
1.75
Pcnd(s) [W] Pcnd(d) [W] Prec(d) [W]Pon(s) [W] Po(s) [W]
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
149
TRENCHSTOP™
advanced isolation
www.infineon.com/advanced-isolation
TRENCHSTOP™ advanced isolation
Fully isolated TO-247 package with industry leading IGBTs
TRENCHSTOP™ advanced isolation solution breaks the limits reached by traditional packaging and isolation
techniques. This new isolated package enables the highest power density, the best performance and the lowest
cooling eort thanks to an eective and reliable thermal path from the IGBT die to the heatsink.
In addition to providing 100 percent electrical isolation, TRENCHSTOP™ advanced isolation also eliminates the need
for thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity,
helping designers to increase power density, as well as lower system complexity and assembling costs.
This new package solution allows industrial and home appliance designs to fully utilize the high performance of
TRENCHSTOP™ IGBTs without compromises for isolation and cooling.
Key features
› 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
› 100 percent tested isolated mounting surface
› Lowest Rth(j-h)
› Low coupling capacitance, 38 pF
› No need for isolation film or thermal
interface material
Key benefits
› Up to 35 percent reduction in assembly time
reduces manufacturing cost
› Increased power density
› Improved reliability from higher yield and
no isolation film misalignment
› Less EMI filter design eort
› Decreased heatsink size
Technology Version and package Part number Equivalent current rating @ 65°C [A ] Rth(j-h) [K/W] VCEsat [V] @ Tvj = 25°C
TRENCHSTOP™
HighSpeed 3
Price/performance
advanced isolation TO-2471)
IKFW40N60DH3E 44 1.35 2.30
IKFW50N60DH3E 60 1.15 2.20
IKFW60N60DH3E 74 1.06 2.20
Best-in-class
advanced isolation TO-2472)
IKFW50N60DH3 60 1.03 1.85
IKFW60N60EH3 63 0.91 1.85
IKFW90N60EH3 95 0.84 1.85
TRENCHSTOP™ Best-in-class
advanced isolation TO-247
IKFW50N60ET 64 0.91 1.50
IKFW75N60ET 95 0.84 1.50
Technology Version and package Part number Equivalent current rating @ 65°C [A ] Rth(j-h) [K/W] Vf [V]
Rapid 1 diode Price/performance
advanced isolation TO-247
IDFW40E65D1E 35 1.92 1.70
IDFW60C65D1 2 x 30 1.37 1.45
TRENCHSTOP™ advanced isolation oers a broad portfolio for specific application needs
Rth(j-h)
TO-247
FullPA
K
50% lower
35% lower
TO-247 with
isolation film
1)
Advanced
isolation
1)
Isolation material: standard polyimide based reinforced carrier
insulator film with 152 µm thickness, 1.3 W/mK thermal conductivity
1) Optimized to replace FullPAK packages or systems including TO-247 with medium performance insulator, standard polyimide based reinforced carrier insulator with 152 µm thickness,
0.9 W/mK thermal conductivity.
2) Optimized to replace systems using TO-247 with high performance insulator, standard polyimide based reinforced carrier insulator with 152 µm thickness, 1.3 W/mK thermal conductivity.
Thermal resistivity of package and isolation types
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
148
149
TRENCHSTOP™
advanced isolation
www.infineon.com/igbt6-1200V
TRENCHSTOP™ IGBT6
New generation 1200 V fast speed IGBT
The new 1200 V IGBT generation TRENCHSTOP™ IGBT6 is designed to meet requirements of high eiciency, lowest
conduction and switching losses in hard switching and resonant topologies operating at switching frequencies
above 15 kHz.
The TRENCHSTOP™ IGBT 6 is released in two product families – low conduction losses optimized S6 series and
improved switching losses H6 series. The TRENCHSTOP™ IGBT6 S6 series features low conduction losses of 1.85
V collector-emitter saturation voltage VCE(sat) combined with low switching losses of the HighSpeed 3 H3 series.
TRENCHSTOP™ IGBT6 H6 series is optimized for low switching losses, provides ~15 percent lower total switching
losses when compared to predecessor generation H3.
Very so, fast recovery anti-parallel emitter controlled diode is optimized for fast recovery while still maintaining a
high level of soness complementing to an excellent EMI behaviour.
Positive temperature coeicient allows easy and reliable device paralleling. Very good RG controllability allows
adjustment of IGBT switching speed to the requirements of application.
300
250
200
150
100
50
0
Switching losses E
tot
/I
Cnom
[μJ/A]
Forward voltage VCE(sat) [V]
Datasheet specifications @ 175°C
TRENCHSTOP™ 2
HighSpeed 3
10 20 30 40 50 60 70 80 90 100
CT2
CS6
BH6
CH3
H3
Lower VCE(sat)
Lower Esw
Key features
› Easy, plug and play replacement of predecessor
HighSpeed 3 H3 IGBT
› 0.15 percent system eiciency improvement when
changing from H3 to S6 in TO-247-3 2)
› 0.2 percent system eiciency improvement when
changing from H3 to S6 in TO-247PLUS 4-pin 2)
Key benefits
› Best combination of switching and conduction
losses for switching frequency 15–40 kHz
› Low conduction losses with 1.85 V VCE(sat) for S6
series
› High RG controllability
› Low EM
› Full rated, robust freewheeling diode
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
149
TRENCHSTOP™
advanced isolation
www.infineon.com/advanced-isolation
TRENCHSTOP™ advanced isolation
Fully isolated TO-247 package with industry leading IGBTs
TRENCHSTOP™ advanced isolation solution breaks the limits reached by traditional packaging and isolation
techniques. This new isolated package enables the highest power density, the best performance and the lowest
cooling eort thanks to an eective and reliable thermal path from the IGBT die to the heatsink.
In addition to providing 100 percent electrical isolation, TRENCHSTOP™ advanced isolation also eliminates the need
for thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity,
helping designers to increase power density, as well as lower system complexity and assembling costs.
This new package solution allows industrial and home appliance designs to fully utilize the high performance of
TRENCHSTOP™ IGBTs without compromises for isolation and cooling.
Key features
› 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
› 100 percent tested isolated mounting surface
› Lowest Rth(j-h)
› Low coupling capacitance, 38 pF
› No need for isolation film or thermal
interface material
Key benefits
› Up to 35 percent reduction in assembly time
reduces manufacturing cost
› Increased power density
› Improved reliability from higher yield and
no isolation film misalignment
› Less EMI filter design eort
› Decreased heatsink size
Technology Version and package Part number Equivalent current rating @ 65°C [A ] Rth(j-h) [K/W] VCEsat [V] @ Tvj = 25°C
TRENCHSTOP™
HighSpeed 3
Price/performance
advanced isolation TO-2471)
IKFW40N60DH3E 44 1.35 2.30
IKFW50N60DH3E 60 1.15 2.20
IKFW60N60DH3E 74 1.06 2.20
Best-in-class
advanced isolation TO-2472)
IKFW50N60DH3 60 1.03 1.85
IKFW60N60EH3 63 0.91 1.85
IKFW90N60EH3 95 0.84 1.85
TRENCHSTOP™ Best-in-class
advanced isolation TO-247
IKFW50N60ET 64 0.91 1.50
IKFW75N60ET 95 0.84 1.50
Technology Version and package Part number Equivalent current rating @ 65°C [A ] Rth(j-h) [K/W] Vf [V]
Rapid 1 diode Price/performance
advanced isolation TO-247
IDFW40E65D1E 35 1.92 1.70
IDFW60C65D1 2 x 30 1.37 1.45
TRENCHSTOP™ advanced isolation oers a broad portfolio for specific application needs
Rth(j-h)
TO-247
FullPA
K
50% lower
35% lower
TO-247 with
isolation film
1)
Advanced
isolation
1)
Isolation material: standard polyimide based reinforced carrier
insulator film with 152 µm thickness, 1.3 W/mK thermal conductivity
1) Optimized to replace FullPAK packages or systems including TO-247 with medium performance insulator, standard polyimide based reinforced carrier insulator with 152 µm thickness,
0.9 W/mK thermal conductivity.
2) Optimized to replace systems using TO-247 with high performance insulator, standard polyimide based reinforced carrier insulator with 152 µm thickness, 1.3 W/mK thermal conductivity.
Thermal resistivity of package and isolation types
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
151
TRENCHSTOP™ 5 selection tree
650 V
Free wheeling diode (FWD)
50 Hz-20 kHz
low speed
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
IGW30N65L5 IGP20N65H5/F5
IGP30N65H5/F5
IGP40N65H5/F5
IGW30N65H5/F5
IGW40N65H5/F5
IGW50N65H5/F5
IGZ50N65H5
IGZ75N65H5
IGZ100N65H5
IGB15N65S5
IGB20N65S5
IGB50N65S5
IGB50N65H5
IKW30N65EL5
IKW30N65NL5
IKW75N65EL5
IKZ75N65EL5
Corresponding best fit IGBT
Corresponding best fit IGBT
TRENCHSTOP™ 5
(H5/F5/S5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
30 kHz-120 kHz
high speed
50 Hz-20 kHz
low speed
IKW30N65WR5
IKW40N65WR5
IKW50N65WR5
RC TRENCHSTOP™ 5
(WR5)
> 20 kHz-60 kHz
high speed
No
Yes
IKP08N65H5
IKP15N65H5
IKP20N65H5
IKP30N65H5
IKP40N65H5
IKA08N65H5
IKA15N65H5
IKW30N65H5
IKW40N65H5
IKW50N65H5
IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ50N65NH5
IKZ75N65EH5
IKZ75N65NH5
IKB15N65EH5
IKB20N65EH5
IKB30N65EH5
IKB40N65EH5
TRENCHSTOP™ 5
(H5)
30 kHz-100 kHz
high speed
IKB40N65EF5
IKP08N65F5
IKP15N65F5
IKP20N65F5
IKP30N65F5
IKP40N65F5
IKA08N65F5
IKA15N65F5
IKW30N65F5
IKW40N65F5
IKW50N65F5
TRENCHSTOP™ 5
(F5)
60 kHz-120 kHz
ultra-high speed
IKW30N65ES5
IKW40N65ES5
IKW50N65ES5
IKW75N65ES5
IKZ50N65ES5
IKZ75N65ES5
IKB30N65ES5
IKB40N65ES5
„So“
TRENCHSTOP™ 5 (S5)
10 kHz-40 kHz
high speed
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
150
151
TRENCHSTOP™ 5 selection tree
TRENCHSTOP™ 5 selection tree
www.infineon.com/trenchstop5
650 V
Free wheeling diode (FWD)
50 Hz-20 kHz
low speed
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
IGW30N65L5 IGP20N65H5/F5
IGP30N65H5/F5
IGP40N65H5/F5
IGW30N65H5/F5
IGW40N65H5/F5
IGW50N65H5/F5
IGZ50N65H5
IGZ75N65H5
IGZ100N65H5
IGB15N65S5
IGB20N65S5
IGB50N65S5
IGB50N65H5
IKW30N65EL5
IKW30N65NL5
IKW75N65EL5
IKZ75N65EL5
Corresponding best fit IGBT
Corresponding best fit IGBT
TRENCHSTOP™ 5
(H5/F5/S5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
30 kHz-120 kHz
high speed
50 Hz-20 kHz
low speed
IKW30N65WR5
IKW40N65WR5
IKW50N65WR5
RC TRENCHSTOP™ 5
(WR5)
> 20 kHz-60 kHz
high speed
No
Yes
IKP08N65H5
IKP15N65H5
IKP20N65H5
IKP30N65H5
IKP40N65H5
IKA08N65H5
IKA15N65H5
IKW30N65H5
IKW40N65H5
IKW50N65H5
IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ50N65NH5
IKZ75N65EH5
IKZ75N65NH5
IKB15N65EH5
IKB20N65EH5
IKB30N65EH5
IKB40N65EH5
TRENCHSTOP™ 5
(H5)
30 kHz-100 kHz
high speed
IKB40N65EF5
IKP08N65F5
IKP15N65F5
IKP20N65F5
IKP30N65F5
IKP40N65F5
IKA08N65F5
IKA15N65F5
IKW30N65F5
IKW40N65F5
IKW50N65F5
TRENCHSTOP™ 5
(F5)
60 kHz-120 kHz
ultra-high speed
IKW30N65ES5
IKW40N65ES5
IKW50N65ES5
IKW75N65ES5
IKZ50N65ES5
IKZ75N65ES5
IKB30N65ES5
IKB40N65ES5
„So“
TRENCHSTOP™ 5 (S5)
10 kHz-40 kHz
high speed
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
151
TRENCHSTOP™ 5 selection tree
650 V
Free wheeling diode (FWD)
50 Hz-20 kHz
low speed
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
IGW30N65L5 IGP20N65H5/F5
IGP30N65H5/F5
IGP40N65H5/F5
IGW30N65H5/F5
IGW40N65H5/F5
IGW50N65H5/F5
IGZ50N65H5
IGZ75N65H5
IGZ100N65H5
IGB15N65S5
IGB20N65S5
IGB50N65S5
IGB50N65H5
IKW30N65EL5
IKW30N65NL5
IKW75N65EL5
IKZ75N65EL5
Corresponding best fit IGBT
Corresponding best fit IGBT
TRENCHSTOP™ 5
(H5/F5/S5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
30 kHz-120 kHz
high speed
50 Hz-20 kHz
low speed
IKW30N65WR5
IKW40N65WR5
IKW50N65WR5
RC TRENCHSTOP™ 5
(WR5)
> 20 kHz-60 kHz
high speed
No
Yes
IKP08N65H5
IKP15N65H5
IKP20N65H5
IKP30N65H5
IKP40N65H5
IKA08N65H5
IKA15N65H5
IKW30N65H5
IKW40N65H5
IKW50N65H5
IKW50N65EH5
IKW75N65EH5
IKZ50N65EH5
IKZ50N65NH5
IKZ75N65EH5
IKZ75N65NH5
IKB15N65EH5
IKB20N65EH5
IKB30N65EH5
IKB40N65EH5
TRENCHSTOP™ 5
(H5)
30 kHz-100 kHz
high speed
IKB40N65EF5
IKP08N65F5
IKP15N65F5
IKP20N65F5
IKP30N65F5
IKP40N65F5
IKA08N65F5
IKA15N65F5
IKW30N65F5
IKW40N65F5
IKW50N65F5
TRENCHSTOP™ 5
(F5)
60 kHz-120 kHz
ultra-high speed
IKW30N65ES5
IKW40N65ES5
IKW50N65ES5
IKW75N65ES5
IKZ50N65ES5
IKZ75N65ES5
IKB30N65ES5
IKB40N65ES5
„So“
TRENCHSTOP™ 5 (S5)
10 kHz-40 kHz
high speed
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
153
Discrete IGBTs selection tree
Diode commutation
IGBT
Frequency range
Voltage range
Part number
Applications
Induction cooking
Microwave
Multifunction printers
Half-bridge resonant
(Current resonance < 650 V)
Single switch
(Voltage resonance > 650 V)
Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Uninterruptable power supply
UPS bridge
Three-level type II converter
Major and small home appliances
Symmetrical full-bridge
PFC
Battery charger
Welding
UPS
Solar
Energy storage
SMPS
Air conditioning
HVDC (Telecom/data centers)
PFC
Welding inverter
Full-brigde
Half-bridge
Two transistor forward
UPS
Three-level NPC1 and
NPC2 topology,
inner switches
Solar
Three-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output
(Al/Mag welding)
UPS
Energy storage
Battery charger
Welding
Solar Inverter
IHpccNvvvR2
IHpccNvvvR3
IHpccN60R/RF
IHpccNvvvR5
IHpccNvvvE1
IKpccN60R
IKpccN60RF
IKpccN60T
IKpccN60dTP
IKpccT120…
IGpccN60T
IGpccN60TP
IGpccT120
IGpccN120T2
IKpccN60H3
IKpccN120H3
IGpccN60H3
IGpccN120H3
IKpccN65H5
IKpccN65F5
IGpccN65H5
IGpccN65F5
IKpccN65dR5 IKpccN65dL5
IGpccN65L5
IKpccN65dS5
600 V, 650 V, 1100 V, 1200 V,
1350 V, 1600 V 600 V 600 V, 1200 V
IKpccN65dT6
IKpccN120dS6
IKpccN120dH6
650 V, 1200 V
650 V 650 V 650 V 650 V600 V, 1200 V
8 kHz – 60 kHz
RC series (monolythic) 2 kHz – 30 kHz
So
Hard/no diode for IG** parts
RC-drives (monolythic) TRENCHSTOP™ Performance TRENCHSTOP™ IGBT6
So turn-o
TRENCHSTOP™ 5 (S5)
HighSpeed 3
(H3)
TRENCHSTOP™ 5
H5/F5
RC TRENCHSTOP™ 5
(WR5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
10 kHz – 40 kHz
medium speed
> 18 kHz – 60 kHz
high speed
10 kHz – 100 kHz
high speed
> 18 kHz – 60 kHz
high speed
50 Hz – 20 kHz
low speed
NEW!
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
152
153
Diode commutation
IGBT
Frequency range
Voltage range
Part number
Applications
Induction cooking
Microwave
Multifunction printers
Half-bridge resonant
(Current resonance < 650 V)
Single switch
(Voltage resonance > 650 V)
Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Uninterruptable power supply
UPS bridge
Three-level type II converter
Major and small home appliances
Symmetrical full-bridge
PFC
Battery charger
Welding
UPS
Solar
Energy storage
SMPS
Air conditioning
HVDC (Telecom/data centers)
PFC
Welding inverter
Full-brigde
Half-bridge
Two transistor forward
UPS
Three-level NPC1 and
NPC2 topology,
inner switches
Solar
Three-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output
(Al/Mag welding)
UPS
Energy storage
Battery charger
Welding
Solar Inverter
IHpccNvvvR2
IHpccNvvvR3
IHpccN60R/RF
IHpccNvvvR5
IHpccNvvvE1
IKpccN60R
IKpccN60RF
IKpccN60T
IKpccN60dTP
IKpccT120…
IGpccN60T
IGpccN60TP
IGpccT120
IGpccN120T2
IKpccN60H3
IKpccN120H3
IGpccN60H3
IGpccN120H3
IKpccN65H5
IKpccN65F5
IGpccN65H5
IGpccN65F5
IKpccN65dR5 IKpccN65dL5
IGpccN65L5
IKpccN65dS5
600 V, 650 V, 1100 V, 1200 V,
1350 V, 1600 V 600 V 600 V, 1200 V
IKpccN65dT6
IKpccN120dS6
IKpccN120dH6
650 V, 1200 V
650 V 650 V 650 V 650 V600 V, 1200 V
8 kHz – 60 kHz
RC series (monolythic) 2 kHz – 30 kHz
So
Hard/no diode for IG** parts
RC-drives (monolythic) TRENCHSTOP™ Performance TRENCHSTOP™ IGBT6
So turn-o
TRENCHSTOP™ 5 (S5)
HighSpeed 3
(H3)
TRENCHSTOP™ 5
H5/F5
RC TRENCHSTOP™ 5
(WR5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
10 kHz – 40 kHz
medium speed
> 18 kHz – 60 kHz
high speed
10 kHz – 100 kHz
high speed
> 18 kHz – 60 kHz
high speed
50 Hz – 20 kHz
low speed
NEW!
NEW!
NEW!
NEW!
Discrete IGBTs selection tree
IGBT selection tree
www.infineon.com/igbtdiscretes
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
153
Discrete IGBTs selection tree
Diode commutation
IGBT
Frequency range
Voltage range
Part number
Applications
Induction cooking
Microwave
Multifunction printers
Half-bridge resonant
(Current resonance < 650 V)
Single switch
(Voltage resonance > 650 V)
Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Uninterruptable power supply
UPS bridge
Three-level type II converter
Major and small home appliances
Symmetrical full-bridge
PFC
Battery charger
Welding
UPS
Solar
Energy storage
SMPS
Air conditioning
HVDC (Telecom/data centers)
PFC
Welding inverter
Full-brigde
Half-bridge
Two transistor forward
UPS
Three-level NPC1 and
NPC2 topology,
inner switches
Solar
Three-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output
(Al/Mag welding)
UPS
Energy storage
Battery charger
Welding
Solar Inverter
IHpccNvvvR2
IHpccNvvvR3
IHpccN60R/RF
IHpccNvvvR5
IHpccNvvvE1
IKpccN60R
IKpccN60RF
IKpccN60T
IKpccN60dTP
IKpccT120…
IGpccN60T
IGpccN60TP
IGpccT120
IGpccN120T2
IKpccN60H3
IKpccN120H3
IGpccN60H3
IGpccN120H3
IKpccN65H5
IKpccN65F5
IGpccN65H5
IGpccN65F5
IKpccN65dR5 IKpccN65dL5
IGpccN65L5
IKpccN65dS5
600 V, 650 V, 1100 V, 1200 V,
1350 V, 1600 V 600 V 600 V, 1200 V
IKpccN65dT6
IKpccN120dS6
IKpccN120dH6
650 V, 1200 V
650 V 650 V 650 V 650 V600 V, 1200 V
8 kHz – 60 kHz
RC series (monolythic) 2 kHz – 30 kHz
So
Hard/no diode for IG** parts
RC-drives (monolythic) TRENCHSTOP™ Performance TRENCHSTOP™ IGBT6
So turn-o
TRENCHSTOP™ 5 (S5)
HighSpeed 3
(H3)
TRENCHSTOP™ 5
H5/F5
RC TRENCHSTOP™ 5
(WR5)
Low VCE(sat)
TRENCHSTOP™ 5 (L5)
10 kHz – 40 kHz
medium speed
> 18 kHz – 60 kHz
high speed
10 kHz – 100 kHz
high speed
> 18 kHz – 60 kHz
high speed
50 Hz – 20 kHz
low speed
NEW!
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
155
TRENCHSTOP™
1200V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247PLUS
3-pin
TRENCHSTOP™ TRENCHSTOP™ 2 TRENCHSTOP™ 2
Single IGBT
8IGW08T120
15 IGW15T120
25 IGW25T120
40 IGW40T120
60 IGW60T120
DuoPack
8IKW08T120
15 IKW15T120 IKW15N120T2
25 IKW25T120 IKW25N120T2
40 IKW40T120 IKW40N120T2 IKQ40N120CT2
50 IKQ50N120CT2
75 IKQ75N120CT2
TRENCHSTOP™ IGBT6
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
6IKD06N65ET6
8IKA08N65ET6*
10 IKA10N65ET6*
15 IKA15N65ET6*
TRENCHSTOP™ IGBT6
1200 V fast speed IGBT product family
Continuous
collector current
@ Tc=100°C
[A]
TO-263
(D2PAK)
TO-220 TO-262
(I2PAK)
TO-220
FullPAK
TO-247 TO-247PLUS
3-pin
TO-247PLUS
4-pin
DuoPack
15 IKW15N120BH6
40 IKW40N120CS6 IKY40N120CS6
75 IKQ75N120CS6 IKY75N120CS6
www.infineon.com/igbt6
* Limited by maximum junction temperature. Applicable for TO-220 standard package.
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
154
155
TRENCHSTOP™ and RC-drives
600V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-247
advanced
isolation
TO-220
FullPAK
TO-247 TO-247PLUS/
Super 247
(TO247AA)
Single IGBT
4IGU04N60T
6IGD06N60T IGP06N60T
10 IGB10N60T IGP10N60T
15 IGB15N60T IGP15N60T
30 IGB30N60T IGW30N60T
IGW30N60TP
40 IGW40N60TP
50 IGB50N60T IGP50N60T IGW50N60T
IGW50N60TP
75 IGW75N60T
IGBT and diode
3IKD03N60RF
4IKD04N60RF
IKD04N60R
IKP04N60T
6
IKD06N60RF
IKD06N60R
IKD06N65ET6
IKB06N60T IKP06N60T IKA06N60T
10 IKD10N60RF
IKD10N60R
IKB10N60T IKP10N60T IKA10N60T
15 IKD15N60RF
IKD15N60R
IKB15N60T IKP15N60T IKA15N60T
20 IKB20N60T IKP20N60T IKW20N60T
30 IKW30N60T
IKW30N60DTP
40 IKW40N60DTP
50 IKFW50N60ET IKW50N60T
IKW50N60DTP
75 IKFW75N60ET IKW75N60T
100 IKQ100N60T
120 IKQ120N60T
Discrete IGBTs product portfolio
www.infineon.com/600V-1200V-trenchstop
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
155
TRENCHSTOP™
1200V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247PLUS
3-pin
TRENCHSTOP™ TRENCHSTOP™ 2 TRENCHSTOP™ 2
Single IGBT
8IGW08T120
15 IGW15T120
25 IGW25T120
40 IGW40T120
60 IGW60T120
DuoPack
8IKW08T120
15 IKW15T120 IKW15N120T2
25 IKW25T120 IKW25N120T2
40 IKW40T120 IKW40N120T2 IKQ40N120CT2
50 IKQ50N120CT2
75 IKQ75N120CT2
TRENCHSTOP™ IGBT6
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
6IKD06N65ET6
8IKA08N65ET6*
10 IKA10N65ET6*
15 IKA15N65ET6*
TRENCHSTOP™ IGBT6
1200 V fast speed IGBT product family
Continuous
collector current
@ Tc=100°C
[A]
TO-263
(D2PAK)
TO-220 TO-262
(I2PAK)
TO-220
FullPAK
TO-247 TO-247PLUS
3-pin
TO-247PLUS
4-pin
DuoPack
15 IKW15N120BH6
40 IKW40N120CS6 IKY40N120CS6
75 IKQ75N120CS6 IKY75N120CS6
www.infineon.com/igbt6
* Limited by maximum junction temperature. Applicable for TO-220 standard package.
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
157
TRENCHSTOP™ 5 F5, H5 and S5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT
20 IGB20N65S5 IGP20N65F5/H5
30 IGB30N65S5 IGP30N65F5/H5
40 IGP40N65F5/H5 IGW40N65F5/H5
50 IGB50N60H5 IGW50N65F5/H5 IGZ50N65H5
IGB50N60S5
75 IGW75N65H5 IGZ75N65H5
100 IGZ100N65H5
DuoPack
8IKP08N65F5/H5 IKA08N65F5/H5
15 IKB15N65EH5 IKP15N65F5/H5 IKA15N65F5/H5
20 IKB20N65EH5 IKP20N65H5/F5
28 IKP28N65ES5
30 IKB30N65EH5 IKP30N65H5/F5 IKW30N65H5
IKB30N65ES5
39 IKP39N65ES5
40
IKB40N65ES5
IKP40N65F5/H5 IKW40N65F5/H5
IKB40N65EH5
IKB40N65EF5
50 IKW50N65F5/H5 IKZ50N65EH5
IKW50N65EH5 IKZ50N65NH5
75 IKW75N65EH5 IKZ75N65NH5
IKZ75N65EH5
Discrete IGBTs product portfolio
TRENCHSTOP™ 5 L5 low VCE(sat)
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT 30 lGW30N65L5
DuoPack
30 IKW30N65EL5
IKW30N65NL5
75 IKW75N65EL5 IKZ75N75EL5
TRENCHSTOP™ 5 WR5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
DuoPack
30 IKW30N65WR5
40 IKW40N65WR5
50 IKW50N65WR5
TRENCHSTOP™ 5 S5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251 TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
DuoPack
30 IKW30N65ES5
40 IKW40N65ES5
50 IKW50N65ES5
IKZ50N65ES5
75 IKW75N65ES5
IKZ50N65ES5
www.infineon.com/trenchstop5
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
156
157
Discrete IGBTs product portfolio
HighSpeed 3
600V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-247
advanced isolation
TO-220
FullPAK
TO-247
IGBT
20 IGB20N60H3 IGP20N60H3 IGW20N60H3
30 IGB30N60H3 IGP30N60H3 IGW30N60H3
40 IGW40N60H3
50 IGW50N60H3
60 IGW60N60H3
75 IGW75N60H3
100 IGW100N60H3
DuoPack
20 IKB20N60H3 IKP20N60H3 IKW20N60H3
30 IKW30N60H3
40 IKFW40N60DH3E IKW40N60H3
50 IKFW50N60DH3E
IKFW50N60DH3
IKW50N60H3
60 IKFW60N60DH3E
IKFW60N60EH3
IKW60N60H3
75 IKW75N60H3
90 IKFW90N60EH3
HighSpeed 3
1200V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247PLUS
3-pin
TO-247PLUS
4-pin
IGBT
15 IGW15N120H3
25 IGW25N120H3
40 IGW40N120H3
DuoPack
15 IKW15N120H3
25 IKW25N120H3
40 IKW40N120H3 IKQ40N120CH3 IKY40N120CH3
50 IKQ50N120CH3 IKY50N120CH3
75 IKQ75N120CH3 IKY75N120CH3
www.infineon.com/rch5
www.infineon.com/rc-e
www.infineon.com/advanced-isolation
Induction cooking series
650V, 1100V, 1200V, 1350V and 1600V product families
Continuous
collector current
@ Tc=100°C
[A]
TO-247
650V 1100V 1200V 1350V 1600V
15
IHW15N120E1
20
IHW20N65R5
IHW20N120R5 IHW20N135R5
25
IHW25N120E1
30
IHW30N65R5 IHW30N110R3 IHW30N120R5 IHW30N135R5 IHW30N160R2
40
IHW40N65R5 IHW40N120R5 IHW40N135R5
50
IHW50N65R5
NEW!
NEW!
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TRENCHSTOP™ 5 F5, H5 and S5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT
20 IGB20N65S5 IGP20N65F5/H5
30 IGB30N65S5 IGP30N65F5/H5
40 IGP40N65F5/H5 IGW40N65F5/H5
50 IGB50N60H5 IGW50N65F5/H5 IGZ50N65H5
IGB50N60S5
75 IGW75N65H5 IGZ75N65H5
100 IGZ100N65H5
DuoPack
8IKP08N65F5/H5 IKA08N65F5/H5
15 IKB15N65EH5 IKP15N65F5/H5 IKA15N65F5/H5
20 IKB20N65EH5 IKP20N65H5/F5
28 IKP28N65ES5
30 IKB30N65EH5 IKP30N65H5/F5 IKW30N65H5
IKB30N65ES5
39 IKP39N65ES5
40
IKB40N65ES5
IKP40N65F5/H5 IKW40N65F5/H5
IKB40N65EH5
IKB40N65EF5
50 IKW50N65F5/H5 IKZ50N65EH5
IKW50N65EH5 IKZ50N65NH5
75 IKW75N65EH5 IKZ75N65NH5
IKZ75N65EH5
Discrete IGBTs product portfolio
TRENCHSTOP™ 5 L5 low VCE(sat)
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
IGBT 30 lGW30N65L5
DuoPack
30 IKW30N65EL5
IKW30N65NL5
75 IKW75N65EL5 IKZ75N75EL5
TRENCHSTOP™ 5 WR5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251
(IPAK)
TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
DuoPack
30 IKW30N65WR5
40 IKW40N65WR5
50 IKW50N65WR5
TRENCHSTOP™ 5 S5
650V product family
Continuous
collector current
@ Tc=100°C
[A]
TO-251 TO-252
(DPAK)
TO-263
(D2PAK)
TO-220 TO-262
(I²PAK)
TO-220
FullPAK
TO-247 TO-247
4-pin
DuoPack
30 IKW30N65ES5
40 IKW40N65ES5
50 IKW50N65ES5
IKZ50N65ES5
75 IKW75N65ES5
IKZ50N65ES5
www.infineon.com/trenchstop5
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
NEW!
Infineon support for discrete IGBTs
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/igbt
www.infineon.com/igbtdiscretes
www.infineon.com/discrete-automotive-igbt
www.infineon.com/latest-discrete-packages
Evaluationboards and simulation models
www.infineon.com/eval-TO-247-4pin
www.infineon.com/igbtdiscrete-simulationmodels
Videos
www.infineon.com/mediacenter
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
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IGBT nomenclature
Nomenclature
IGBT (aer 03/2013)
IGBT (before 03/2013)
Company
I = Infineon
S
= Formerly Siemens
I K
Device
G
= Single IGBT
H
= Reverse conducting
K
= Duo pack
Package type
A
= TO-220-3 FullPAK
B
= TO-263-3 (D2PAK)
D
= TO-252-3 (DPAK)
P
= TO-220-3
U
= TO-251-3 (IPAK)
W
= TO-247-3
Y
= TO-247PLUS 4-pin
FW
= TO-247-3 advanced isolation
Q
= TO-247PLUS/Super 247 (TO247AA)
Z
= TO-247-4
F5 = Ultra fast IGBT
H5 = High speed IGBT
L5 = Low VCE(sat) IGBT
R5 = Reverse conducting IGBT
E1 = Reverse conducting IGBT
S5 = “Soft” high speed IGBT
T6 = TRENCHSTOP™ IGBT6
TP = TRENCHSTOP™ Performance
WR5 = RC TRENCHSTOP™ 5
S6 = 1200 V TRENCHSTOP™ IGBT6
H6 = 1200 V TRENCHSTOP™ IGBT6 fa
st
Diode (for duo pack only)
B = Emitter controlled half rated
C = Emitter controlled full rated
D = Rapid 1 half rated
E = Rapid 1 full rated
N = Rapid 2 full rated
W = Full rated hard switching
W 75 N65L5E
Nominal
current
[A] @ 100°C
Nominal voltage
Divided by 10 (650 V/10 = 65)
Technology
N
= N-channel
P
= P-channel
Company
I = Infineon
S
= Formerly Siemens
I K
Device
K
= IGBT + diode (normal drives)
H
= Optimized for so
switching applications
(e.g. induction heating)
G
= Single IGBT
D
= Diode
Package type
A
= TO-220 FullPAK
B
= TO-263 (D2PAK)
D
= TO-252 (DPAK)
P
= TO-220
U
= TO-251 (IPAK)
W
= TO-247
– = Fast IGBT (~20 kHz)
Hχ = HighSpeed generation (600 V - 1200 V)
Tχ = TRENCHSTOP™ generation (600 V IGBT 3) (1200 V IGB
T 4)
Rχ = Reverse conducting
RF = Reverse conducting fast
F = HighSpeed FAST 5
Rχ = Rapid diode generation
W 40 N 120 H3
Generation
Nominal current
(@ 100°C) [A]
Nominal voltage
Divided by 10 (1200 V/10 = 120)
Technology
N = N-channel
T = TRENCHSTOPTM
E = Emitter-controlled diodes (for diode only)
www.infineon.com/igbtdiscretes
Infineon support for discrete IGBTs
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/igbt
www.infineon.com/igbtdiscretes
www.infineon.com/discrete-automotive-igbt
www.infineon.com/latest-discrete-packages
Evaluationboards and simulation models
www.infineon.com/eval-TO-247-4pin
www.infineon.com/igbtdiscrete-simulationmodels
Videos
www.infineon.com/mediacenter
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Discrete IGBTs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
161
CrCM PFC ICs
Power factor correction and combo controller
Critical conduction mode PFC ICs
TDA4862G
Power factor controller (PFC) IC for high-power factor
and active harmonic filter
› IC for sinusoidal line current consumption
› Power factor approaching 1
› Controls boost converter as an active
harmonics filter
› Internal start-up with low current consumption
› Zero current detector for discontinuous
operation mode
› High current totem pole gate driver
› Trimmed ±1.4% internal reference
› Undervoltage lockout with hysteresis
› Very low start-up current consumption
› Pin compatible with world standard
› Output overvoltage protection
› Current sense input with internal low pass filter
› Totem pole output with active shutdown
during UVLO
› Junction temperature range -40°C to +150°C
› Available in DIP-8 and SO-8 packages
TDA4863G/TDA4863-2G
Power factor controller IC for high-power
factor and low THD additional features to TDA4862
› Reduced tolerance of signal levels
› Improved light load behavior
› Open loop protection
› Current sense input with leading edge blanking LEB
› Undervoltage protection
› SO-8 package
IRS2505LPBF
› Crticial conduction mode PFC control
› High power factor and ultralow THD
› Wide load and line range
› Regulated and programmable DC bus voltage
› No secondary winding required
› MOSFET cycle-by-cycle overcurrent protection
› DC bus overvoltage protection
› Low EMI gate drive
› Ultralow start-up current
› 20.8 V internal Zener clamp on VCC
› Excellent ESD and latch immunity
› RoHS compliant
› 5-pin SOT-23 package
TDA4862G
TDA4863G
TDA4863-2G
IRS2505LPBF
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161
Power management ICs
Power management ICs
Technology leadership in power supply
AC-DC power management ICs
PFC controller
Continuous conduction mode
(CCM) PFC
Critical conduction mode
(CrCM) PFC Combi (PFC+PWM)
Fixed frequency
ICE2PCS02G (65 kHz)
ICE2PCS03G (100 kHz)
Adjustable frequency
ICE2PCS01G (50 - 250 kHz)
ICE2PCS05G (20 - 250 kHz)
ICE3PCS01G (OVP+brown-out)
ICE3PCS02G (OVP)
ICE3PCS03G (Brown-out)
Stand-alone PWM
Fixed frequency (FF) CoolSET™
PWM controller
Fixed frequency
ICE5GSAG (125 kHz)
ICE5ASAG (100 kHz)
ICE3AS03LJG (100 kHz)
ICE3BS03LJG (65 kHz)
Quasi-resonant
ICE5QSAG
ICE2QS02G
ICE2QS03G
Half-bridge LLC resonant
ICE1HS01G-1
ICE2HS01G
TDA4862G
TDA4863G
TDA4863-2G
IRS2505LPBF
CrCM + LLC
XDP™ SMPS IDP2308 (DSO-14)
XDP™ SMPS IDP2303A (DSO-16)
650 V F3/F3R CoolSET™
ICE3Axx65ELJ
ICE3RBRxx65JZ
ICE3RBRxx65JG
700 V Gen5 CoolSET™
ICE5AR4770AG
ICE5AR4770BZS
800 V F3R CoolSET™
ICE5A/GRxx80AG
ICE5ARxx80BZS
ICE3A/BRxx80JZ
ICE3ARxx80CJZ
ICE3ARxx80VJZ
ICE3ARxx80JG
Quasi-resonant (QR) CoolSET™
650 V CoolSET™
ICE2QRxx65(Z)/(G)
700 V CoolSET™
ICE5QRxx70AZ/G
800 V CoolSET™
ICE2QRxx80Z/G
ICE5QRxx80AZ/G
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
161
CrCM PFC ICs
Power factor correction and combo controller
Critical conduction mode PFC ICs
TDA4862G
Power factor controller (PFC) IC for high-power factor
and active harmonic filter
› IC for sinusoidal line current consumption
› Power factor approaching 1
› Controls boost converter as an active
harmonics filter
› Internal start-up with low current consumption
› Zero current detector for discontinuous
operation mode
› High current totem pole gate driver
› Trimmed ±1.4% internal reference
› Undervoltage lockout with hysteresis
› Very low start-up current consumption
› Pin compatible with world standard
› Output overvoltage protection
› Current sense input with internal low pass filter
› Totem pole output with active shutdown
during UVLO
› Junction temperature range -40°C to +150°C
› Available in DIP-8 and SO-8 packages
TDA4863G/TDA4863-2G
Power factor controller IC for high-power
factor and low THD additional features to TDA4862
› Reduced tolerance of signal levels
› Improved light load behavior
› Open loop protection
› Current sense input with leading edge blanking LEB
› Undervoltage protection
› SO-8 package
IRS2505LPBF
› Crticial conduction mode PFC control
› High power factor and ultralow THD
› Wide load and line range
› Regulated and programmable DC bus voltage
› No secondary winding required
› MOSFET cycle-by-cycle overcurrent protection
› DC bus overvoltage protection
› Low EMI gate drive
› Ultralow start-up current
› 20.8 V internal Zener clamp on VCC
› Excellent ESD and latch immunity
› RoHS compliant
› 5-pin SOT-23 package
TDA4862G
TDA4863G
TDA4863-2G
IRS2505LPBF
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
163
CCM PFC ICs
3rd generation continuous conduction mode
PFC IC features
› Fulfills class D requirements of IEC 61000-3-2
› Integrated digital voltage loop compensation
› Boost follower function
› Bulk voltage monitoring signals, brown-out
› Multi protections such as double OVP
› Fast output dynamic response during load jump
› External synchronization
› Extra-low peak current limitation threshold
› SO-8 and SO-14
› Lead-free, RoHS compliant
3rd generation continuous conduction mode PFC IC product portfolio
Product Frequency – fSW Current drives Features Package
ICE3PCS01G
Adjustable
0.75 A OVP+brown-out SO-14
ICE3PCS02G 0.75 A OVP SO-8
ICE3PCS03G 0.75 A Brown-out SO-8
PFC CCM IC by feature ICE2PCS01G
ICE2PCS05G
ICE2PCS02G
ICE2PCS03G
ICE3PCS03G ICE3PCS02G ICE3PCS01G
Digital control voltage loop – ✓ ✓ ✓
Variable frequency ✓ – ✓ ✓ ✓
Synchronous frequency – ✓ ✓ ✓
Open loop protection ✓ ✓ ✓ ✓ ✓
Low peak current limit -1 V -1 V -0.4 V -0.4 V -0.2 V
Brown-out protection – ✓ ✓ – ✓
Overvoltage protection ✓ ✓ ✓ ✓ ✓
Second overvoltage protection – ✓ ✓
PFC enable function – ✓
Boost follower mode – ✓
5 V regulator – ✓
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162
163
CCM PFC ICs
ICE2PCS0xG
ICE3PCS0xG
Continuous conduction mode PFC ICs
2nd generation continuous conduction mode
PFC IC features
› Fulfills class D requirements of IEC 61000-3-2
› Lowest count of external components
› Adjustable and fixed switching frequencies
› Frequency range from 20 to 250 kHz
› Versions with brown-out protection available
› Wide input range supported
› Enhanced dynamic response during load jumps
› Cycle by cycle peak current limiting
› Integrated protections OVP, OCP
› DIP-8 and DSO-8
› Lead-free, RoHS compliant
2nd generation continuous conduction mode PFC IC product portfolio
Product Frequency – fSW Current drives Package
ICE2PCS01G 50-250 kHz 2.0 A
DSO-8
ICE2PCS02G 65 kHz 2.0 A
ICE2PCS03G 100 kHz 2.0 A
ICE2PCS05G 20-250 kHz 2.0 A
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Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
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163
CCM PFC ICs
3rd generation continuous conduction mode
PFC IC features
› Fulfills class D requirements of IEC 61000-3-2
› Integrated digital voltage loop compensation
› Boost follower function
› Bulk voltage monitoring signals, brown-out
› Multi protections such as double OVP
› Fast output dynamic response during load jump
› External synchronization
› Extra-low peak current limitation threshold
› SO-8 and SO-14
› Lead-free, RoHS compliant
3rd generation continuous conduction mode PFC IC product portfolio
Product Frequency – fSW Current drives Features Package
ICE3PCS01G
Adjustable
0.75 A OVP+brown-out SO-14
ICE3PCS02G 0.75 A OVP SO-8
ICE3PCS03G 0.75 A Brown-out SO-8
PFC CCM IC by feature ICE2PCS01G
ICE2PCS05G
ICE2PCS02G
ICE2PCS03G
ICE3PCS03G ICE3PCS02G ICE3PCS01G
Digital control voltage loop – ✓ ✓ ✓
Variable frequency ✓ – ✓ ✓ ✓
Synchronous frequency – ✓ ✓ ✓
Open loop protection ✓ ✓ ✓ ✓ ✓
Low peak current limit -1 V -1 V -0.4 V -0.4 V -0.2 V
Brown-out protection – ✓ ✓ – ✓
Overvoltage protection ✓ ✓ ✓ ✓ ✓
Second overvoltage protection – ✓ ✓
PFC enable function – ✓
Boost follower mode – ✓
5 V regulator – ✓
www.infineon.com/acdc
LLC half-bridge controller IC ICE1HS01G-1 ICE2HS01G
Package DSO-8 DSO-20
Switching frequency range up to 600 kHz up to 1 MHz
LLC sostart ✓ ✓
LLC burst mode ✓ ✓
Adjustable minimum frequency ✓ ✓
Overload/open loop protection ✓ ✓
Mains undervoltage protection with hysteresis ✓ ✓
Overcurrent protection 2-level 3-level
Drive signal for synchronous rectification – ✓
Adjustable dead time – ✓
External latch-oand OTP – ✓
Target application LCD-TV, audio, etc. Server, PC, LCD-TV, etc.
www.infineon.com/acdc
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
165
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165
Resonant LLC half-bridge controller IC
› Novel and simple design (12 components + HB driver)
› Minimum operating frequency is adjustable externally
› Burst mode operation for output voltage regulation
during no load and/or bus overvoltage
› Multiple protections in case of fault
› Input voltage sense for brown-out protection
› Open loop/overload fault detection by FB pin with
auto restart and adjustable blanking/restart time
› Frequency shi for overcurrent protection
› Lead-free, RoHS compliant package
› DSO-8 package
› Novel LLC/SR operation mode and controlled by
primary side controller
› Multiple protections for SR operation
› Tight tolerance control
› Accurate setting of switching frequency and dead time
› Simple system design
› Optimized system eiciency
› Multiple converter protections: OTP, OLP, OCP,
latch-o enable
› External disable for either SR switching or HB switching
› Lead-free, RoHS compliant package
› DSO-20 package
LLC resonant (no SR)
ICE1HS01G-1
Resonant LLC half-bridge controller IC
with integrated synchronized rectifier control
Product Frequency - fsw Dead time Current drives Package
ICE2HS01G 30 kHz~1 MHz 100~1000 ns 0.3 A DSO-20
LLC resonant + SR
ICE2HSO1G
LLC controller ICs
Product Frequency – fSW Dead time Current drives Package
ICE1HS01G-1 30 kHz~600 kHz 380 ns 1.5 A DSO-8
LLC half-bridge controller IC ICE1HS01G-1 ICE2HS01G
Package DSO-8 DSO-20
Switching frequency range up to 600 kHz up to 1 MHz
LLC so start ✓ ✓
LLC burst mode ✓ ✓
Adjustable minimum frequency ✓ ✓
Overload/open loop protection ✓ ✓
Mains undervoltage protection with hysteresis ✓ ✓
Overcurrent protection 2-level 3-level
Drive signal for synchronous rectification – ✓
Adjustable dead time – ✓
External latch-o and OTP – ✓
Target application LCD-TV, audio, etc. Server, PC, LCD-TV, etc.
www.infineon.com/acdc
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
165
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
167
Climate saver systems
www.infineon.com/pcpower
www.infineon.com/acdc
www.infineon.com/coolset
FF CoolSETTM
DC-DC
PFC PWM
DC-DC
5 V
3.3
V
12 V
5 V
Climate saver 80 PLUS® Gold Climate saver 80 PLUS® Platinum
Certification for Infineon's PC power reference design
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
QR CoolSET™
ICE5QR4780AZ
ICE2QR4780G
ICE5QR2280AZ
ICE2QR2280G-1
ICE5QR1680AG
ICE2QR1080G
ICE5QR0680AG
80 PLUS® Gold
80 PLUS® Platinum
Certification for Infineon's PC power reference design
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166
167
Climate saver systems
Climate saver 80 PLUS® and 80 PLUS® Bronze
Climate saver systems
Climate saver 80 PLUS® Silver
FF CoolSETTM
5 V
PFC
DC-DC
12 V
5 V
3.3
V
DC-DC
PWM
FF CoolSET
TM
PFC/PWM
12 V
5 V
3.3
V
5 V
PFC block ICE1CS02/G
PWM block
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
PFC block ICE2PCS01G
ICE2PCS02G
PWM block ICE1HS01G-1
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
80 PLUS® Silver
80 PLUS® and 80 PLUS® Bronze
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
167
Climate saver systems
www.infineon.com/pcpower
www.infineon.com/acdc
www.infineon.com/coolset
FF CoolSETTM
DC-DC
PFC PWM
DC-DC
5 V
3.3
V
12 V
5 V
Climate saver 80 PLUS® Gold Climate saver 80 PLUS® Platinum
Certification for Infineon's PC power reference design
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
FF CoolSET™
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG
ICE5AR0680AG
PFC block
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
PWM block ICE2HS01G
Standby block
QR CoolSET™
ICE5QR4780AZ
ICE2QR4780G
ICE5QR2280AZ
ICE2QR2280G-1
ICE5QR1680AG
ICE2QR1080G
ICE5QR0680AG
80 PLUS® Gold
80 PLUS® Platinum
Certification for Infineon's PC power reference design
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
169
5th generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
15 W 23 W 27 W 40 W
RDS(on) max 5.18 Ω 2.35 Ω 1.75 Ω 0.80 Ω
700 V DIP-7 ICE5AR4770BZS
DSO-12 ICE5AR4770AG
800 V DIP-7 ICE5AR4780BZS ICE5AR0680BZS
DSO-12 ICE5GR4780AG ICE5GR2280AG ICE5GR1680AG ICE5AR0680AG
3rd generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
10~15 W 19~21 W 23~26 W 30~34 W 37~41 W
RDS(on) max 11.1~5.44 Ω 3.42~2.62 Ω 1.96~1.71 Ω 1.11~1.05 Ω 0.75~0.71 Ω
650 V
DIP-7 ICE3RBR4765JZ ICE3RBR1765JZ ICE3RBR0665JZ
DIP-8 ICE3BR4765J ICE3A1065ELJ ICE3BR1765J ICE3A2065ELJ ICE3BR0665J
DSO-12 ICE3RBR4765JG ICE3RBR1765JG ICE3RBR0665JG
800 V DIP-7
ICE3AR4780JZ ICE3AR2280JZ ICE3AR1580VJZ ICE3AR1080VJZ ICE3AR0680JZ
ICE3AR4780VJZ ICE3BR2280JZ ICE3BR0680JZ
ICE3AR4780CJZ ICE3AR2280VJZ ICE3AR0680VJZ
ICE3AR10080CJZ ICE3AR2280CJZ
DSO-12 ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG
Isolated AC-DC
1) Calculated DCM maximum output power in an open-frame design based on Ta=50° C and Tj=125°C without copper area as heatsink
5th generation fixed frequency PWM IC and CoolSET™ features
› Integrated CoolMOS™ in both 700 V
and 800 V MOSFET
› Cascode configuration for brown-in
protection, fast and robust start-up
› Available in both 100 kHz and 125
kHz fixed switching frequency
› Frequency reduction in tandem
with load reduction to increase
eiciency
› Selectable active burst mode entry/
exit profile to optimize standby
power and ability to disable
› Support CCM flyback operation
with in-build slope compensation
› Integrated error amplifier for direct
feedback (e.g. non-isolated flyback)
› Adjustable line input overvoltage
protection (only ICE5xRxxxxAG)
› VCC and CS pin short-to-ground
protection
› Auto restart protection mode to
minimize interruption to operation
› DSO-8 package (standalone
controller), DIP-7 and DSO-12
package for CoolSET™
FF CoolSETTM
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
168
169
Isolated AC-DC
Isolated AC-DC
5th generation quasi-resonant PWM IC and CoolSET™ features
› Integrated CoolMOS™ in both 700 V
and 800 V MOSFET with cascode
configuration
› Digital frequency reduction with
reducing load
› Novel quasi-resonant to minimize
the spread of switching frequency
between low and high line AC input
› Selectable active burst mode
entry/exit profile
› Auto restart mode for line
overvoltage protection
› Auto restart mode for brown-out
protection
› Auto restart mode for VCC under-/
overvoltage protection
› Auto restart mode for open-loop
and output overload protection
› Auto restart mode for
overtemperature protection
with hysteresis
› Auto restart mode for output
overvoltage
› Auto restart mode for CS pin
short-to-ground protection
› Limited charging current during
VCC pin short-to-ground protection
› Peak power limitation with input
voltage compensation
› Minimum switching frequency
limitation (no audible noise on
power units on/o)
› DSO package (controller) and
DIP-7/DSO-12 (CoolSET™ )
5th generation quasi-resonant CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
15 W 22 W 27 W 32 W 41 W~42 W
RDS(on) max 5.18 Ω 2.35 Ω 1.75 Ω 1.25 Ω 0.80 Ω
700 V DIP-7 ICE5QR4770AZ ICE5QR2270AZ ICE5QR1070AZ
DSO-12 ICE5QR4770AG
800 V DIP-7 ICE5QR4780AZ ICE5QR2280AZ ICE5QR0680AZ
DSO-12 ICE5QR1680AG ICE5QR0680AG
2nd generation quasi-resonant CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
14 W~15 W 20 W~21 W 23 W~26 W 31 W 38 W~42 W
RDS(on) max 5.44 Ω ~ 5.18 Ω 2.62 Ω 1.96 Ω 1.11 Ω 0.75 Ω~0.71 Ω
650 V
DIP-7 ICE2QR4765Z ICE2QR1765Z ICE2QR0665Z
DIP-8 ICE2QR4765 ICE2QR1765 ICE2QR0665
DSO-12 ICE2QR4765G ICE2QR1765G ICE2QR0665G
800 V
DIP-7 ICE2QR2280Z ICE2QR0680Z
DSO-12 ICE2QR4780G ICE2QR2280G
ICE2QR2280G-1
ICE2QR1080G
1) Calculated maximum output power in an open frame design at Ta=50°C, Tj=125°C and without copper area as heat sink
QR CoolSETTM
zero crossing
detector
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
169
5th generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
15 W 23 W 27 W 40 W
RDS(on) max 5.18 Ω 2.35 Ω 1.75 Ω 0.80 Ω
700 V DIP-7 ICE5AR4770BZS
DSO-12 ICE5AR4770AG
800 V DIP-7 ICE5AR4780BZS ICE5AR0680BZS
DSO-12 ICE5GR4780AG ICE5GR2280AG ICE5GR1680AG ICE5AR0680AG
3rd generation fixed frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C
10~15 W 19~21 W 23~26 W 30~34 W 37~41 W
RDS(on) max 11.1~5.44 Ω 3.42~2.62 Ω 1.96~1.71 Ω 1.11~1.05 Ω 0.75~0.71 Ω
650 V
DIP-7 ICE3RBR4765JZ ICE3RBR1765JZ ICE3RBR0665JZ
DIP-8 ICE3BR4765J ICE3A1065ELJ ICE3BR1765J ICE3A2065ELJ ICE3BR0665J
DSO-12 ICE3RBR4765JG ICE3RBR1765JG ICE3RBR0665JG
800 V DIP-7
ICE3AR4780JZ ICE3AR2280JZ ICE3AR1580VJZ ICE3AR1080VJZ ICE3AR0680JZ
ICE3AR4780VJZ ICE3BR2280JZ ICE3BR0680JZ
ICE3AR4780CJZ ICE3AR2280VJZ ICE3AR0680VJZ
ICE3AR10080CJZ ICE3AR2280CJZ
DSO-12 ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG
Isolated AC-DC
1) Calculated DCM maximum output power in an open-frame design based on Ta=50° C and Tj=125°C without copper area as heatsink
5th generation fixed frequency PWM IC and CoolSET™ features
› Integrated CoolMOS™ in both 700 V
and 800 V MOSFET
› Cascode configuration for brown-in
protection, fast and robust start-up
› Available in both 100 kHz and 125
kHz fixed switching frequency
› Frequency reduction in tandem
with load reduction to increase
eiciency
› Selectable active burst mode entry/
exit profile to optimize standby
power and ability to disable
› Support CCM flyback operation
with in-build slope compensation
› Integrated error amplifier for direct
feedback (e.g. non-isolated flyback)
› Adjustable line input overvoltage
protection (only ICE5xRxxxxAG)
› VCC and CS pin short-to-ground
protection
› Auto restart protection mode to
minimize interruption to operation
› DSO-8 package (standalone
controller), DIP-7 and DSO-12
package for CoolSET™
FF CoolSETTM
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
171
2nd generation
ICE2QRxxxxZ/G
2nd generation
ICE2QRxx80G-1
5th generation
ICE5QRxxxxAZ/G
Switching scheme QR with 7 zero crossing counters Novel QR with 10 zero
crossing counters
Integrated MOSFET 650 V and 800 V 800 V 700 V and 800 V
High voltage start-up cell ✓ Cascode
Power saving during standby Active burst mode fSW @ 52 kHz 2 level selectable active burst
mode quasi-resonant
VCC on/othreshold (typ.) 18 V/10.5 V 18 V/9.85 V 16 V/10 V
Adjustable output overvoltage protection ✓ with latch ✓ with auto restart
VCC over/undervoltage protection ✓ with auto restart ✓ with auto restart
Overload/open loop protection ✓ with auto restart ✓ with auto restart
Overtemperature protection ✓ with auto restart ✓ (Auto restart with hysteresis)
Adjustable line input overvoltage protection
– ✓ with auto restart
Brown-out – ✓ with auto restart
CS pin short to ground – ✓ with auto restart
VCC pin short to ground – ✓ (No start-up)
Package DIP-7
DIP-8
DSO-12
DIP-7
DSO-12
DIP-7
DSO-12
Quasi-resonant CoolSET™
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
170
171
Isolated AC-DC
5th generation 3rd generation
FF PWM IC ICE5ASAG ICE5GSAG ICE3AS03LJG ICE3BS03LJG
Package DSO–8 DSO–8
Switching frequency 100 kHz 125 kHz 100 kHz 65 kHz
Operating temperature -40°C~129°C -25°C~130°C
Start-up cell Cascode ✓
VCC on/o threshold 16 V/10 V 18 V/10.5 V
So start time 12 ms 10 ms 20 ms
Frequency jittering ✓ ✓
Modulated gate drive ✓ ✓
Active burst mode ✓ (3 level selectable) ✓
Slope compensation for CCM ✓ –
Frequency reduction ✓ –
Integrated error amplifier for direct feedback ✓ –
Adjustable line Input overvoltage protection ✓ with auto restart –
Adjustable brown-in protection ✓ with auto restart –
CS pin short-to-ground protection ✓ with auto restart –
VCC pin short-to-ground protection ✓ (no start–up) –
VCC undervoltage protection ✓ with auto restart ✓ with auto restart
VCC overvoltage protection ✓ with auto restart ✓ with latch–up
Overload /open loop protection ✓ with auto restart ✓ with auto restart
Overtemperature protection ✓ with auto restart and hysteresis ✓ with latch–up
External blanking time extension – ✓ with auto restart
External protection enable pin – ✓ with latch–up
Feature ICE5QSAG ICE2QS02G ICE2QS03G
Package DSO-8 DSO-8 DSO-8
Switching scheme Novel QR with 10 zero crossing
counters
QR with 7 zero crossing counters QR with 7 zero crossing counters
Operating temperature -40°C~129°C -25°C~130°C -25°C~130°C
Startup cell Cascode – ✓
VCC on/o 16 V/10 V 12 V/11 V 18 V/10.5 V
Power saving during standby ✓ active burst mode in QR switching
2-level selectable burst mode
entry/exit level
– ✓ active burst mode 52 kHz
Digital frequency reduction for high
average eiciency ✓✓✓
OLP blanking time Fixed Adjustable Fixed
Auto restart timer Through VCC charging/discharging Setting with external components Through VCC charging/discharging
Maximum input power limitation Vin pin voltage dependent Adjustable through ZC resistor Adjustable through ZC resistor
VCC undervoltage protection ✓ with auto restart ✓ with latch ✓ with auto restart
Adjustable output overvoltage protection ✓ with auto restart ✓ with latch ✓ with latch
Adjustable line input
overvoltage protection
✓ – –
Brown-out feature ✓ ✓ –
VCC and CS pin short to ground protection ✓ – –
Target application Home appliances, set-top-box, AUX
SMPS
AUX power supply to VCC eg. LCD TV
multi/main, audio main,
PDP TV multi/address
Self-power supply to VCC eg. smart
meter, industrial applications
Fixed frequency PWM IC
Quasi-resonant PWM IC
www.infineon.com/acdc
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
171
2nd generation
ICE2QRxxxxZ/G
2nd generation
ICE2QRxx80G-1
5th generation
ICE5QRxxxxAZ/G
Switching scheme QR with 7 zero crossing counters Novel QR with 10 zero
crossing counters
Integrated MOSFET 650 V and 800 V 800 V 700 V and 800 V
High voltage start-up cell ✓ Cascode
Power saving during standby Active burst mode fSW @ 52 kHz 2 level selectable active burst
mode quasi-resonant
VCC on/o threshold (typ.) 18 V/10.5 V 18 V/9.85 V 16 V/10 V
Adjustable output overvoltage protection ✓ with latch ✓ with auto restart
VCC over/undervoltage protection ✓ with auto restart ✓ with auto restart
Overload/open loop protection ✓ with auto restart ✓ with auto restart
Overtemperature protection ✓ with auto restart ✓ (Auto restart with hysteresis)
Adjustable line input overvoltage protection
– ✓ with auto restart
Brown-out – ✓ with auto restart
CS pin short to ground – ✓ with auto restart
VCC pin short to ground – ✓ (No start-up)
Package DIP-7
DIP-8
DSO-12
DIP-7
DSO-12
DIP-7
DSO-12
Quasi-resonant CoolSET™
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
173
700 V CoolSET™ 650V CoolSET™
Gen5
ICE5ARxx70AG(BZS)
Gen3
ICE3Axx65ELJ
Gen3R
ICE3BRxx65J
Gen3R
ICE3RBRxx65JZ(G)
Package DIP-7, DSO-12 DIP-8 DIP-7, DSO-12
Output power range 15 W 19 W~34 W 15 W~41 W 14 W~39 W
Operating temperature range -40°C~129°C -25°C~130°C -40°C~130°C
Switching frequency 100 kHz 100 kHz 65 kHz 65 kHz
Frequency reduction ✓ –
Integrated error amplifier ✓ –
Slope compensation for CCM mode ✓ –
VCC on/othreshold 16 V/10 V 18 V/10.5 V
Sostart time 12 ms 20 ms
Active burst mode selection 3 level 1 level
CS pin short-to-ground protection Auto restart –
VCC pin short-to-ground protection No start-up –
VCC overvoltage protection Auto restart Latch Auto restart
Overtemperature protection Auto restart with hysteresis Latch Auto restart
External protection enable pin -Latch Auto restart
Adjustable brown-in/-out protection Brown-in only –
Adjustable line input overvoltage
protection Only ICE5ARxx70AG –
Fast AC reset –
Product available ICE5AR4770AG
ICE5AR4770BZS
ICE3A1065ELJ
ICE3A2065ELJ
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG
800V CoolSET™
Gen3R
ICE3A(B)Rxx80JZ
Gen3R
ICE3ARxx80CJZ
Gen3R
ICE3ARxx80JG
Gen3R
ICE3ARxx80VJZ
Gen5
ICE5ARxx80AG(BZS)
Gen5
ICE5GRxx80AG
DIP–7 DSO–12 DIP–7 DIP–7, DSO–12 DSO–12
10 W~40 W 11 W~23 W 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W
–25°C~130°C –40°C~130°C –40°C~129°C
100 kHz/65 kHz 100 kHz 100 kHz 100 kHz 125 kHz
– ✓
– ✓
– ✓ – ✓
17 V/10.5 V 16 V/10 V
10 ms 12 ms
4 level 3 level 4 level 3 level
– Auto restart
– No start–up
Auto restart
Auto restart with hysteresis
Auto restart Latch Auto restart –
Auto restart – Brown-in only
–Auto restart Only ICE5ARxx80AG Auto restart
– ✓ –
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
ICE3AR10080CJZ
ICE3AR4780CJZ
ICE3AR2280CJZ
ICE3AR4780JG
ICE3AR2280JG
ICE3AR1080JG
ICE3AR4780VJZ
ICE3AR2280VJZ
ICE3AR1580VJZ
ICE3AR1080VJZ
ICE3AR0680VJZ
ICE5AR0680AG
ICE5AR4780BZS
ICE5AR0680BZS
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
172
173
Isolated AC-DC
Fixed frequency CoolSET™
1) Calculated 85 VAC~300 VAC DCM maximum output power in an open-frame design based on Ta=50°C and Tj=125°C without copper area as heatsink
700 V CoolSET™ 650V CoolSET™
Gen5
ICE5ARxx70AG(BZS)
Gen3
ICE3Axx65ELJ
Gen3R
ICE3BRxx65J
Gen3R
ICE3RBRxx65JZ(G)
Package DIP-7, DSO-12 DIP-8 DIP-7, DSO-12
Output power range 15 W 19 W~34 W 15 W~41 W 14 W~39 W
Operating temperature range -40°C~129°C -25°C~130°C -40°C~130°C
Switching frequency 100 kHz 100 kHz 65 kHz 65 kHz
Frequency reduction ✓ –
Integrated error amplifier ✓ –
Slope compensation for CCM mode ✓ –
VCC on/o threshold 16 V/10 V 18 V/10.5 V
So start time 12 ms 20 ms
Active burst mode selection 3 level 1 level
CS pin short-to-ground protection Auto restart –
VCC pin short-to-ground protection No start-up –
VCC overvoltage protection Auto restart Latch Auto restart
Overtemperature protection Auto restart with hysteresis Latch Auto restart
External protection enable pin -Latch Auto restart
Adjustable brown-in/-out protection Brown-in only –
Adjustable line input overvoltage
protection Only ICE5ARxx70AG –
Fast AC reset –
Product available ICE5AR4770AG
ICE5AR4770BZS
ICE3A1065ELJ
ICE3A2065ELJ
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG
www.infineon.com/coolset
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
173
700 V CoolSET™ 650V CoolSET™
Gen5
ICE5ARxx70AG(BZS)
Gen3
ICE3Axx65ELJ
Gen3R
ICE3BRxx65J
Gen3R
ICE3RBRxx65JZ(G)
Package DIP-7, DSO-12 DIP-8 DIP-7, DSO-12
Output power range 15 W 19 W~34 W 15 W~41 W 14 W~39 W
Operating temperature range -40°C~129°C -25°C~130°C -40°C~130°C
Switching frequency 100 kHz 100 kHz 65 kHz 65 kHz
Frequency reduction ✓ –
Integrated error amplifier ✓ –
Slope compensation for CCM mode ✓ –
VCC on/o threshold 16 V/10 V 18 V/10.5 V
So start time 12 ms 20 ms
Active burst mode selection 3 level 1 level
CS pin short-to-ground protection Auto restart –
VCC pin short-to-ground protection No start-up –
VCC overvoltage protection Auto restart Latch Auto restart
Overtemperature protection Auto restart with hysteresis Latch Auto restart
External protection enable pin -Latch Auto restart
Adjustable brown-in/-out protection Brown-in only –
Adjustable line input overvoltage
protection Only ICE5ARxx70AG –
Fast AC reset –
Product available ICE5AR4770AG
ICE5AR4770BZS
ICE3A1065ELJ
ICE3A2065ELJ
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG
800V CoolSET™
Gen3R
ICE3A(B)Rxx80JZ
Gen3R
ICE3ARxx80CJZ
Gen3R
ICE3ARxx80JG
Gen3R
ICE3ARxx80VJZ
Gen5
ICE5ARxx80AG(BZS)
Gen5
ICE5GRxx80AG
DIP–7 DSO–12 DIP–7 DIP–7, DSO–12 DSO–12
10 W~40 W 11 W~23 W 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W
–25°C~130°C –40°C~130°C –40°C~129°C
100 kHz/65 kHz 100 kHz 100 kHz 100 kHz 125 kHz
– ✓
– ✓
– ✓ – ✓
17 V/10.5 V 16 V/10 V
10 ms 12 ms
4 level 3 level 4 level 3 level
– Auto restart
– No start–up
Auto restart
Auto restart with hysteresis
Auto restart Latch Auto restart –
Auto restart – Brown-in only
–Auto restart Only ICE5ARxx80AG Auto restart
– ✓ –
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
ICE3AR10080CJZ
ICE3AR4780CJZ
ICE3AR2280CJZ
ICE3AR4780JG
ICE3AR2280JG
ICE3AR1080JG
ICE3AR4780VJZ
ICE3AR2280VJZ
ICE3AR1580VJZ
ICE3AR1080VJZ
ICE3AR0680VJZ
ICE5AR0680AG
ICE5AR4780BZS
ICE5AR0680BZS
ICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
175
www.infineon.com/xdp-smps
GDO
ZCD
CSO
VS
V
AC
HV
HBFB
GND
VCC
CS1
GD1HSGNDHSVCCHSGD
IDP2308
UART
Vout_1
Vout_2
P
ower_on/
standby
Vbulk
Target applications
› LCD TV power supply
› General SMPS
› Power adapter
IDP2308 – embedded PSU
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
174
175
XDP™ digital power
XDP™ SMPS
IDP2308 and IDP2303A – digital multi-mode PFC+LLC combo controller
The IDP2303 and IDP2303A are high performance digital combo controllers with integrated drivers and 600 V depletion cell
designed for boost PFC and half-bridge LLC targeting switched mode power supplies (SMPS) from 75 W to 300 W.
› Support non-AUX operation with the lowest standby performance and start-up cell
› Support multi-mode PFC operation for optimized eiciency curve
› Configurable frequency setting for LLC so-start and normal operation
› Synchronous PFC and LLC burst mode control with so-start to prevent acoustic noise
› Excellent dynamic response by adaptive LLC burst mode
› Configurable and comprehensive protections for PFC/LLC/IC temp
› IEC62368-1 certified active X-cap discharge function
› Flexible IC parameter setting with digital UART interface supports
PSU platform approach
Key benefits
› Low BOM count due to high integration of digital control
› No auxiliary power supply needed
› Easy design of system schematic and PCB layout
› Small form factor design
› Higher system reliability
› Shorter development cycles and higher design and production flexibility
www.infineon.com/xdp-smps
IDP2303A – power adapter
GDO
ZCD
CSO
VS
V
AC
HV
HBFB
GND
VCC
CS1
GD1HSGNDHSVCCHSGD
IDP2303A
V
UART
SR IC
Vout
Product Target application Major dierence Package
IDP2308 TV embedded PSU 2nd redundant PFC output
overvoltage protection
DSO-14 (with enhanced HV creepage distance)
IDP2303A Adapter, general SMPS Constant output voltage DSO-16
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
175
www.infineon.com/xdp-smps
GDO
ZCD
CSO
VS
V
AC
HV
HBFB
GND
VCC
CS1
GD1HSGNDHSVCCHSGD
IDP2308
UART
Vout_1
Vout_2
P
ower_on/
standby
Vbulk
Target applications
› LCD TV power supply
› General SMPS
› Power adapter
IDP2308 – embedded PSU
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
177
70 A with exposed top for improved thermal performance
Infineon’s TDA21475 exposed-top power stage contains a low quiescent-current synchronous buck gatedriver IC
co-packaged with high-side and low-side MOSFETs. The package is optimized for PCB layout, heat transfer, driver/
MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The gate driver and
MOSFET combination enables higher eiciency at the lower output voltages required by cutting edge CPU, GPU and
DDR memory designs.
The TDA21475 internal MOSFET current sense algorithm with temperature compensation achieves superior current
sense accuracy versus best-in-class controller-based inductor DCR sense methods. Protection includes cycle-by-cycle
over current protection with programmable threshold, VCC/VDRV UVLO protection, bootstrap capacitor undervoltage
protection, phase fault detection, IC temperature reporting and thermal shutdown. The TDA21475 also features auto
replenishment of the bootstrap capacitor to prevent overdischarging. The TDA21475 features a deep-sleep power
saving mode, which greatly reduces the power consumption when the multiphase system enters PS3/PS4 mode.
Operation at switching frequency as high as 1.5 MHz enables high performance transient response, allowing reduction
of output inductance and output capacitance while maintaining industry-leading eiciency. The TDA21475 is
optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the
server market also makes the TDA21475 ideally suited for powering GPU and DDR memory designs.
Features
› Co-packaged driver, high-side and low-side MOSFETs
› 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting
› Input voltage (VIN) range of 4.25 to 16 V
› VCC and VDRV supply of 4.25 to 5.5 V
› Output voltage range from 0.25 up to 5.5 V
› Output current capability of 70 A
› Operation up to 1.5 MHz
› VCC/VDRV undervoltage lockout (UVLO)
› Bootstrap capacitor undervoltage protection
› 8 mV/°C temperature analog output
› Thermal shutdown and fault flag
› Cycle-by-cycle over current protection with programmable threshold and fault flag
› MOSFET phase fault detection and flag
› Auto replenishment of bootstrap capacitor
› Deep-sleep mode for power saving
› Compatible with 3.3 V tri-state PWM input
› Body-Braking™ load transient support
› Small 5 x 6 x 0.65 mm PQFN package
› Lead-free RoHS compliant package
› Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET
Part type Iout
[A]
Package
TDA21475 70 5 x 6 x 0.6 mm PQFN
www.infineon.com/integrated-powerstages
Non-isolated DC-DC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
176
177
Non-isolated DC-DC
Infineon’s integrated power stage family contains a synchronous buck gate driver IC which is co-packed with control
and synchronous MOSFETs and a Schottky diode to further improve eiciency. The package is optimized for PCB
layout, heat transfer, driver/MOSFET control timing and minimal switch node ringing when layout guidelines are
followed. The paired gate driver and MOSFET combination enables higher eiciency at lower output voltages required
by cutting edge CPU, GPU, ASIC and DDR memory designs. The TDA21472 integrated power stages internal MOSFET
current sense algorithm, with integrated temperature compensation, achieves superior current sense accuracy
versus best-in-class controller based inductor DCR sense methods. Up to 1.0 MHz switching frequency enables high
performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors,
while maintaining industry-leading eiciency. The TDA21472 is optimized for CPU core power delivery in server
applications. The ability to meet the stringent requirements of the server market also makes the TDA21472 ideally
suited for powering GPU, ASIC, DDR memory, and other high current designs.
Features
› Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET
› 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting
› Input voltage (Vin) range of 4.5 to 15 V
› VCC and VDRV supply of 4.5 to 7 V
› Output voltage range from 0.25 up to 5.5 V
› Output current capability of 70 A
› Operation up to 1.0 MHz
› VCC undervoltage lockout (UVLO)
› 8 mV/°C temperature analog output and thermal flag pull-up to 3.3 V
› Overtemperature protection (OTP)
› Cycle-by-cycle self-preservation overcurrent protection (OCP)
› MOSFET phase fault detection and flag
› Preliminary overvoltage protection (pre-OVP)
› Compatible with 3.3 V tri-state PWM input
› Body-Braking™ load transient support through PWM tri-state
› Diode emulation mode (DEM) for improved light load eiciency
› Eicient dual-sided cooling
› Small 5.0 x 6.0 x 0.9 mm PQFN package
Applications
› High frequency, high current, low profile DC-DC converters
› Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays
Part type Iout
[A]
Package
TDA21472 70 5 x 6 x 0.9 mm PQFN
TDA21462 60 5 x 6 x 0.9 mm PQFN
www.infineon.com/integrated-powerstages
Non-isolated DC-DC - integrated power stage
60 A and 70 A with integrated current sense
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
177
70 A with exposed top for improved thermal performance
Infineon’s TDA21475 exposed-top power stage contains a low quiescent-current synchronous buck gatedriver IC
co-packaged with high-side and low-side MOSFETs. The package is optimized for PCB layout, heat transfer, driver/
MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The gate driver and
MOSFET combination enables higher eiciency at the lower output voltages required by cutting edge CPU, GPU and
DDR memory designs.
The TDA21475 internal MOSFET current sense algorithm with temperature compensation achieves superior current
sense accuracy versus best-in-class controller-based inductor DCR sense methods. Protection includes cycle-by-cycle
over current protection with programmable threshold, VCC/VDRV UVLO protection, bootstrap capacitor undervoltage
protection, phase fault detection, IC temperature reporting and thermal shutdown. The TDA21475 also features auto
replenishment of the bootstrap capacitor to prevent overdischarging. The TDA21475 features a deep-sleep power
saving mode, which greatly reduces the power consumption when the multiphase system enters PS3/PS4 mode.
Operation at switching frequency as high as 1.5 MHz enables high performance transient response, allowing reduction
of output inductance and output capacitance while maintaining industry-leading eiciency. The TDA21475 is
optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the
server market also makes the TDA21475 ideally suited for powering GPU and DDR memory designs.
Features
› Co-packaged driver, high-side and low-side MOSFETs
› 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting
› Input voltage (VIN) range of 4.25 to 16 V
› VCC and VDRV supply of 4.25 to 5.5 V
› Output voltage range from 0.25 up to 5.5 V
› Output current capability of 70 A
› Operation up to 1.5 MHz
› VCC/VDRV undervoltage lockout (UVLO)
› Bootstrap capacitor undervoltage protection
› 8 mV/°C temperature analog output
› Thermal shutdown and fault flag
› Cycle-by-cycle over current protection with programmable threshold and fault flag
› MOSFET phase fault detection and flag
› Auto replenishment of bootstrap capacitor
› Deep-sleep mode for power saving
› Compatible with 3.3 V tri-state PWM input
› Body-Braking™ load transient support
› Small 5 x 6 x 0.65 mm PQFN package
› Lead-free RoHS compliant package
› Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET
Part type Iout
[A]
Package
TDA21475 70 5 x 6 x 0.6 mm PQFN
www.infineon.com/integrated-powerstages
Non-isolated DC-DC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
179
Non-isolated DC-DC
25 A, 35 A, 40 A power stages
Infineon’s TDA21240 powerstage is a multichip module that incorporates Infineon’s premier MOSFET technology for a single
high-side and a single low-side MOSFET coupled with a robust, high performance, high switching frequency gate driver in a
single PG-IQFN-30-2 package. The optimized gate timing allows for significant light load eiciency improvements over discrete
solutions. When combined with Infineon’s family of digital multi-phase controllers, the TDA21240 forms a complete core
voltage regulator solution for advanced micro and graphics processors as well as point-of-load applications.
Features
› For synchronous buck converter step down voltage applications
› Maximum average current of 40 A
› Input voltage range +4.5 V to +16 V
› Power MOSFETs rated 25 V
› Fast switching technology for improved performance at high switching frequencies (> 500 kHz)
› Remote driver disable function
› Includes bootstrap diode
› Undervoltage lockout
› Shoot through protection
› +5 V high side and low side MOSFETs driving voltage
› Compatible to standard +3.3 V PWM controller integrated circuits
› Tri-state PWM input functionality
› Small package: PG-IQFN-30-2 (4 x 4 x 1 mm)
› RoHS compliant
› Thermal warning
Applications
› Desktop and server VR buck converter
› Single Phase and multiphase POL
› CPU/GPU regulation in notebook, desktop graphics cards, DDR memory, graphic memory
› High power density voltage regulator modules (VRM)
› Qualified for DC-DC industrial applications based on JEDEC (JESD47, JESD22, J-STD20)
› General purpose POL DC-DC converters
Part type Iout
[A]
Package
TDA21242 25 4 x 4 x 1 mm PQFN
TDA21241 35 4 x 4 x 1 mm PQFN
TDA21240 40 4 x 4 x 1 mm PQFN
www.infineon.com/integrated-powerstages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
178
179
Non-isolated DC-DC
20 A with integrated current sense
Infineon’s IR35401 integrated power stage contains a synchronous buck gate driver IC, which is co-packaged with
control and synchronous MOSFETs and Schottky diode to further improve eiciency. The package is optimized for
PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are
followed. The paired gatedriver and MOSFET combination enables higher eiciency at lower output voltages required
by cutting edge CPU, GPU and DDR memory designs.
The IR35401 power stage features an integrated current sense amplifier to achieve superior current-sense accuracy
against best-in-class controller-based inductor DCR sense methods while delivering the clean and accurate current
report information. The protection features inside IR35401 include VCC UVLO and thermal flag. IR35401 also features
an auto replenishment of bootstrap capacitor to prevent the bootstrap capacitor from overdischarging. The IR35401
supports deep-sleep mode and consumes <100 µA VCC bias current when the EN pin is pulled low. Up to 1.5 MHz switching
frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input
and output capacitors while maintaining industry-leading eiciency. When combined with Infineon’s digital controllers,
the IR35401 incorporates the Body-Braking™ feature through PWM tri-state which enables reduction of output capacitors.
The IR35401 is optimized for low current CPU rails in server applications. The ability to meet the stringent requirements
of the server market also makes the IR35401 ideally suited for powering GPU and DDR memory rails.
Features
› Integrated driver, control MOSFET and synchronous MOSFET
› Integrated bootstrap synchronous PFET
› Inductor DCR current sensing with temperature compensation
› Input voltage (VIN) range from 4.25 to 16 V
› VCC supply of 4.25 to 5.5 V
› Output voltage range from 0.5 to 3 V or up to 5.5 V if the internal current sense amplifier is not used
› Local lossless inductor current sensing with improved noise immunity and accuracy
› Single reference based current reporting output
› Output current capability of 20 A
› Operation up to 1.5 MHz
› VCC undervoltage lockout
› Over-temperature and VCC UVLO fault communication to controller via TOUT pin
› Compatible with 3.3 V tri-state PWM Input
› Body-Braking™ load transient support through PWM tri-state
› Auto-replenishment on BOOST pin
› Low operating quiescent current and <100 µA when disabled
› Small 4 x 5 x 0.9 mm PQFN package
› Lead-free RoHS compliant package
Applications
› General purpose POL DC-DC converters
› Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays
Part type Iout
[A]
Package
IR35401 20 4 x 5 x 0.9 mm PQFN
www.infineon.com/integrated-powerstages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
179
Non-isolated DC-DC
25 A, 35 A, 40 A power stages
Infineon’s TDA21240 powerstage is a multichip module that incorporates Infineon’s premier MOSFET technology for a single
high-side and a single low-side MOSFET coupled with a robust, high performance, high switching frequency gate driver in a
single PG-IQFN-30-2 package. The optimized gate timing allows for significant light load eiciency improvements over discrete
solutions. When combined with Infineon’s family of digital multi-phase controllers, the TDA21240 forms a complete core
voltage regulator solution for advanced micro and graphics processors as well as point-of-load applications.
Features
› For synchronous buck converter step down voltage applications
› Maximum average current of 40 A
› Input voltage range +4.5 V to +16 V
› Power MOSFETs rated 25 V
› Fast switching technology for improved performance at high switching frequencies (> 500 kHz)
› Remote driver disable function
› Includes bootstrap diode
› Undervoltage lockout
› Shoot through protection
› +5 V high side and low side MOSFETs driving voltage
› Compatible to standard +3.3 V PWM controller integrated circuits
› Tri-state PWM input functionality
› Small package: PG-IQFN-30-2 (4 x 4 x 1 mm)
› RoHS compliant
› Thermal warning
Applications
› Desktop and server VR buck converter
› Single Phase and multiphase POL
› CPU/GPU regulation in notebook, desktop graphics cards, DDR memory, graphic memory
› High power density voltage regulator modules (VRM)
› Qualified for DC-DC industrial applications based on JEDEC (JESD47, JESD22, J-STD20)
› General purpose POL DC-DC converters
Part type Iout
[A]
Package
TDA21242 25 4 x 4 x 1 mm PQFN
TDA21241 35 4 x 4 x 1 mm PQFN
TDA21240 40 4 x 4 x 1 mm PQFN
www.infineon.com/integrated-powerstages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
181
Non-isolated DC-DC
Typical multiphase application circuit
CVIN1
Cboost1
L1
12 V
CVCC1
VGD
CVIN2
Cboost2
L2
12 V
CVIN3
L3
12 V
CVIN4
L4
12 V
V_CPU_L2
LOAD
CCS
RS2
1uF
3.3 V
10nF
1K
13K
12V
10nF
13K
13K
1uF
VIN_1
RVIN1_1
Rseries
RVIN1_2
10nF
1K
13K
12V
VIN_2 RVIN2_1
RVIN2_2
I2C Bus
If pin is configured
for SM_ALERT
VV
CPU Serial
Bus
3.3V
1K
VV
From
System
VV
Bus
CCS
RS2
Rseries
V_CPU_L1
LOAD
CVIN_L2
L4
12 V
10nF
1K
PWM
REFIN
ZCD_EN#
BOOST
SW
PGND
GATEL
TDA21472
LGND
CVDRV1
CVCC2
VGD
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV2
Cboost3
CVCC3
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV3
Cboost4
CVCC4
VGD
CVDRV4
Cboost5
CVCC5
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV5
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
RCSP
RCSM
VCC
VSEN
VRTN
TSEN
CFILT
VINSEN
SM_ALERT#/
VINSEN2/PSI#1
SV_ALERT#
SV_DIO
SV_CLK
VRHOT_ICRIT#
EN
EN_L2/INMODE/
CAT_FLT
SV_ADDR
SM_DIO
SM_CLK
RCSP_L2
RCSM_L2
VSEN_L2
VRTN_L2
GND
PWM1
ISEN1
IRTN1
PWM2
ISEN2
IRTN2
PWM3
ISEN3
IRTN3
PWM4
ISEN4
IRTN4
PWM1_L2
ISEN1_L2
IRTN1_L2
VRDY1
VRDY2
ADDR_PROT
IR3584
I2C
TDA21472
TDA21472
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
REFIN
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
VCC
VCC
VCC
VCC
VCC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
180
181
Digital controllers
Point-of-load power management
Infineon’s digital multiphase and multirail controllers provide power for today’s medium and high current POL
applications used in telecom/datacom, server, and storage environments. Infineon’s digital controller family enables
OEMs and ODMs to improve eiciency and total cost of ownership, while increasing power density and optimizing the
total system footprint of the voltage regulator. The products highlighted in the table below represent our fih generation
digital controller family and support up to two rails with 1-6 phases on individual rails. The I
2
C/PMBus™ interface
connects the digital controllers to the application system and provides real time telemetry information, monitoring and
control capabilities. The digital controllers are fully configurable through our PowerCode™ and PowerClient™ graphical
user interfaces that allows for easy to use and simplified design optimization.
Multi-phase configurations are supported for best power optimization
Advantages of a digital controller
Protection features include a set of sophisticated overvoltage, undervoltage, overtemperature, and overcurrent protections.
Each of the controllers in the table above also detect and protect against an open circuit on the remote sensing inputs.
These attributes provide a complete and advanced protection feature set for microprocessor, DSP, FPGA or ASIC power
systems. Accurate current sense telemetry is achieved through internal calibration that measures and corrects current
sense oset error sources upon start-up. Programmable temperature compensation provides accurate current sense
information even when using DCR current sense.
Feature Controller family
Configurable output rails Dual rail Dual rail Dual/single rail Dual/single rail Dual rail Dual/single rail Dual/single rail Dual rail
Part number PMBus™ PXE1610C IR35212 XDPE10280B XDPE10281B IR35204 IR35201 IR35223 XDPE132G5C
Phase
configuration
Main 7 ph 7 ph 8 ph 8 ph 4 ph 8 ph 10 ph 16 ph
Subconfigurations 6 + 1 6+1 8+0, 6+2, 4+4 8+0, 6+2, 4+4 3+1 8+0, 7+1, 6+2 10+0, 5+5 8+8
Vout_max 2.5 V 3.3 V 3.04 V 3.04 V 3.3 V 3.3 V 3.3 V 3.3 V
Switching frequency Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz
Operating temperature range - 5°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 85°C - 40°C to 120°C
VQFN package 48-lead
(6x6)
0.4 mm pitch
48-lead
(6x6)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
40-lead
(5x5)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
48-lead
(6x6)
0.4 mm pitch
56-lead
(7x7)
0.4 mm pitch
Typical application Intel server,
high end
desktop
Intel server,
workstation,
high end
desktop
Intel server,
workstation,
high end
desktop
AMD server,
workstation,
high end
desktop
AMD server,
memory and
SOC
AMD server,
CPU
Phase
redundant
based server
systems
AMD server,
GPU, ASIC,
networking
ASSP
www.infineon.com/digital-controller
Non-isolated DC-DC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
181
Non-isolated DC-DC
Typical multiphase application circuit
CVIN1
Cboost1
L1
12 V
CVCC1
VGD
CVIN2
Cboost2
L2
12 V
CVIN3
L3
12 V
CVIN4
L4
12 V
V_CPU_L2
LOAD
CCS
RS2
1uF
3.3 V
10nF
1K
13K
12V
10nF
13K
13K
1uF
VIN_1
RVIN1_1
Rseries
RVIN1_2
10nF
1K
13K
12V
VIN_2 RVIN2_1
RVIN2_2
I2C Bus
If pin is configured
for SM_ALERT
VV
CPU Serial
Bus
3.3V
1K
VV
From
System
V
V
Bus
CCS
RS2
Rseries
V_CPU_L1
LOAD
CVIN_L2
L4
12 V
10nF
1K
PWM
REFIN
ZCD_EN#
BOOST
SW
PGND
GATEL
TDA21472
LGND
CVDRV1
CVCC2
VGD
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV2
Cboost3
CVCC3
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV3
Cboost4
CVCC4
VGD
CVDRV4
Cboost5
CVCC5
VGD
TDA21472
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
CVDRV5
PWM
ZCD_EN#
BOOST
SW
PGND
GATEL
LGND
RCSP
RCSM
VCC
VSEN
VRTN
TSEN
CFILT
VINSEN
SM_ALERT#/
VINSEN2/PSI#1
SV_ALERT#
SV_DIO
SV_CLK
VRHOT_ICRIT#
EN
EN_L2/INMODE/
CAT_FLT
SV_ADDR
SM_DIO
SM_CLK
RCSP_L2
RCSM_L2
VSEN_L2
VRTN_L2
GND
PWM1
ISEN1
IRTN1
PWM2
ISEN2
IRTN2
PWM3
ISEN3
IRTN3
PWM4
ISEN4
IRTN4
PWM1_L2
ISEN1_L2
IRTN1_L2
VRDY1
VRDY2
ADDR_PROT
IR3584
I2C
TDA21472
TDA21472
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
IOUT
VDRV
VIN
TOUT /FLT
REFIN
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
IOUT
VDRV
VIN
TOUT /FLT
REFIN
VCC
VCC
VCC
VCC
VCC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
183
Typical application schematic
Order information for ICL5102
ICL5102 - High performance PFC + resonant controller for LCC and LLC
Features and benefits
›Small form factor LED driver and low BOM
T
he high level of integration assures a low count of external components, enabling small form factor designs and making
them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor and outdoor applications
›High performance, digital PFC and advanced HB driver
The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and DCM
mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1
percent of the nominal power without audible noise
›Fast time-to-light and low standby
With start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300 ms,
while standby the controller changes into active burst mode which reduces power consumption to less than 300 mW
›Safety first
The controller has a comprehensive set of protection features built in to increase the system safety. It monitors in the
run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC and/or inverter,
output overvoltage, overtemperature and capacitive load operation
LED driver ICs
www.infineon.com/icl5102
Type Description Ordering code
ICL5102 PFC and resonant controller for LCC and LLC SP002224374
EVAL-ICL5102-U130W-CC PFC/LLC-CC constant current evaluation board 130 W LED driver SP001667160
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
182
183
LED driver ICs
LED driver ICs for general lighting
Professional lighting
Infineon's innovative multi-mode LED driver ICs deliver high eiciency, high power factor and low harmonics to LED
lighting applications, while supporting dimming levels down to one percent. The high level of integration simplifies
designs by reducing the need for external components. The XDP™ digital power technology supports quick design and
simplifies logistics handling, hence saving eort and cost.
ICL5101– resonant controller with PFC for LED driver
The ICL5101 integrates a half-bridge controller with a PFC stage in a single package. The high level of integration
assures a low count of external components, enabling small form factor designs and making them ideal for compact
power supplies in lighting applications, such as LED driver. All operation parameters of the IC are adjustable by
simple resistors, which makes them a perfect choice for aordable and reliable configuration. A comprehensive set
of protection features including an adjustable external overtemperature protection and capacitive load protection,
ensures the detection of fault conditions to increase the system safety.
Features and benefits
› Secondary-side constant voltage or constant current control
› PFC in CrCM mode during nominal load and DCM mode
in low-load condition down to 0.1 percent
for operation without audible noise
› High-power quality with PF > 0.96, THD < 10 percent
› Highest eiciency of up to 95 percent due to
resonant topology
› Allows secondary-side IC dimming down to 1 percent
› PFC/LLC combo IC allows the best matching of PFC
stage and LLC stage timing control
› Supports a wide input voltage range from 90-305 V
› Ultrafast time to light < 200 ms
› Complete set of protection features including external
thermal protection
Typical application schematic
www.infineon.com/icl5101
Order information for ICL5101
Type Description Ordering code
ICL5101 Resonant controller with PFC SP001213622
EVALLEDICL5101E1 PFC/LLC evaluation board 110 W SP001296078
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
183
Typical application schematic
Order information for ICL5102
ICL5102 - High performance PFC + resonant controller for LCC and LLC
Features and benefits
›Small form factor LED driver and low BOM
T
he high level of integration assures a low count of external components, enabling small form factor designs and making
them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor and outdoor applications
›High performance, digital PFC and advanced HB driver
The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and DCM
mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1
percent of the nominal power without audible noise
›Fast time-to-light and low standby
With start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300 ms,
while standby the controller changes into active burst mode which reduces power consumption to less than 300 mW
›Safety first
The controller has a comprehensive set of protection features built in to increase the system safety. It monitors in the
run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC and/or inverter,
output overvoltage, overtemperature and capacitive load operation
LED driver ICs
www.infineon.com/icl5102
Type Description Ordering code
ICL5102 PFC and resonant controller for LCC and LLC SP002224374
EVAL-ICL5102-U130W-CC PFC/LLC-CC constant current evaluation board 130 W LED driver SP001667160
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
185
XDPL8210 – digital flyback constant current controller IC for
LED driver with 1 percent dimming
The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with high power factor and high precision
primary side controlled constant current output. The IC is available in a DSO-8 package and it provides a wide feature
set, which requires only a small number of external components. Sophisticated algorithms provide flicker-free
dimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves
functional safety, while configurable parameters allow last minute changes, shorten the product development and
reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure
safe, reliable and robust LED driver for a large set of use cases.
Features and benefits
› Constant current with primary side regulation
› Supports AC and DC input
› Nominal input voltage range 90-305 VAC
or 90-430 VDC
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over wide load range
› Standby power < 100 mW
› Internal temperature guard with adaptive thermal
management
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
– Output shorted
www.infineon.com/xdpl8210
Typical application schematic
LED driver ICs
Type Description Ordering code
XDPL81210* Digital flyback constant current controller IC SP001643692
REF-XDPL8210-U35W
35 W reference design with CDM10V isolated 0 V-10 V dimming interface
SP001886070
Order information for XDPL8210
XDPL8210
PWM
90
… 305 VAC
VCC
CS
GD
GND
ZCD
Output
HV
RCS
CVCC
Iout
Optional VCC
regulator
CoolMOS™
* coming Q1/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
184
185
LED driver ICs
XDP™ LED
The IC family XDP™ is the first all-in-one package solutions combining a digital controller with key power
peripherals. Such integration provides exceptional flexibility and performance. The XDP™ family addresses
essential features for advanced LED driver.
XDPL8105 – digital flyback controller IC for LED driver
The XDPL8105 is a digital, single-stage flyback controller with high power factor for constant current LED driver.
The device oers versatile functions for dierent indoor and outdoor lighting applications. The IC is available in a DSO-8
package and it provides a wide feature set, requiring a minimum of external components. The advanced control algorithms
in the digital core of the XDPL8105 provide multimode operation for high eiciency. Configurable parameters allow last
minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable
standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver device for diverse use cases.
Features and benefits
› Constant current with primary side regulation
› Supports AC and DC input
› Nominal input voltage range 90-305 VAC or
120-350 VDC
› Integrated 600 V start-up cell
› Power factor > 0.9 and THD < 15 percent over wide load range
› Highly accurate primary side control output current typ.
± 3 percent
› Reference board eiciency > 90 percent
› Internal temperature guard with adaptive thermal
management
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
– Output shorted
www.infineon.com/xdpl8105
Typical application schematic
Type Description Ordering code
XDPL8105 Digital flyback controller IC SP001639446
REF-XDPL8105-CDM10V
40 W reference design with CDM10V isolated 0 V-10 V dimming interface
SP001649474
Order information for XDPL8105
85
… 305 VAC
VCC
CS
GD
GND
ZCD
XDPL8105
Output
HV
R_CS
I
out
CoolMOS™
Optional VCC
regulator
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
185
XDPL8210 – digital flyback constant current controller IC for
LED driver with 1 percent dimming
The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with high power factor and high precision
primary side controlled constant current output. The IC is available in a DSO-8 package and it provides a wide feature
set, which requires only a small number of external components. Sophisticated algorithms provide flicker-free
dimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves
functional safety, while configurable parameters allow last minute changes, shorten the product development and
reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure
safe, reliable and robust LED driver for a large set of use cases.
Features and benefits
› Constant current with primary side regulation
› Supports AC and DC input
› Nominal input voltage range 90-305 VAC
or 90-430 VDC
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over wide load range
› Standby power < 100 mW
› Internal temperature guard with adaptive thermal
management
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
– Output shorted
www.infineon.com/xdpl8210
Typical application schematic
LED driver ICs
Type Description Ordering code
XDPL81210* Digital flyback constant current controller IC SP001643692
REF-XDPL8210-U35W
35 W reference design with CDM10V isolated 0 V-10 V dimming interface
SP001886070
Order information for XDPL8210
XDPL8210
PWM
90
… 305 VAC
VCC
CS
GD
GND
ZCD
Output
HV
RCS
CVCC
Iout
Optional VCC
regulator
CoolMOS™
* coming Q1/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
187
XDPL8220 - digital dual stage multi-mode flyback controller for CC, CV, LP
with primary side regulation
The XDPL8220 simplifies for the lighting industry to realize essential features for smart lighting and increases the
benefits to the end user and the luminaire manufacturers. The XDPL8220 is a digital, highly integrated, future-proof
device combining a quasi-resonant PFC plus a quasi-resonant flyback digital controller with primary side regulation.
The multi control features - constant voltage, constant current, and limited power - enable a highly versatile LED driver
(e.g. window LED driver). The main application field of the XDPL8220 is advanced dual stage LED driver for indoor or
outdoor lighting. The IC is available in a DSO-16 package.
Features and benefits
› Constant current, constant voltage, limited power
with primary side regulation
› PWM dimming input controls respective analog
output current
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over
wide load range
› Nominal input voltage range 100-305 VAC
or 90-430 VDC
› Standby power < 100 mW
› Internal temperature guard with adaptive
thermal management
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
www.infineon.com/xdpl8220
Type Description Ordering code
XDPL8220 Digital dual stage multimode flyback Controller for CC, CV, LP SP001398160
REF-XDPL8220-U30W 30 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630060
REF-XDPL8220-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630066
REF-XDPL8220-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630068
Order information for XDPL8220
LED driver ICs
Input
volt
age
L
N
GDF
CSF
XDPL8220
GN
PW M
UART GND
VVC
ZC
ART
Vsupply
SPFC
DPFC
S
LED-
LE
D+
PW M
EM P
R_NTC
CoolMOS™
CoolMOS™
Typical application schematic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
186
187
XDPL8218 – high power factor constant voltage flyback IC with secondary
side regulation
The XDPL8218 is a digital, highly integrated, future-proof device combining a constant voltage quasi-resonant flyback
controller with algorithms for high power factor and low THD. The main application field for XDPL8218 are dual stage
designs with a DC-DC stage at secondary side and XDPL8218 as primary side. The device manages wide load ranges and
reacts fast and stable to dynamic load changes. The digital core of the XDPL8218 enables high eiciency over full output
power range, multimode operation with quasi-resonant switching at high power, discontinuous conduction mode fre-
quency reduction at medium power and active burst mode at low power. The XDPL8218 is available in a DSO-8 package.
Wide input voltage range
› Constant voltage with secondary side regulation
› Supports AC and DC input
› Nominal input voltage range 100-305 VAC or
90-430 VDC
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over wide load
range
› Standby power < 100 mW
› Internal temperature guard with adaptive thermal
management
› Brown-out and brown-in protections
› Embedded digital filters
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
– Output shorted
www.infineon.com/xdpl8218
Type Description Ordering code
XDPL8218* Digital flyback CV-output controller IC SP001707258
REF-XDPL8218-U40W 40 W reference board with replaceable feedback circuit SP001710980
Order information for XDPL8218*
LED driver ICs
Feedback circuit
In
put
VCC
CS
GD
ZCD
Output
HV
FB
GND
CVCC
RCS
XDPL8218
CoolMOS™
Typical application schematic
* coming Q1/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
187
XDPL8220 - digital dual stage multi-mode flyback controller for CC, CV, LP
with primary side regulation
The XDPL8220 simplifies for the lighting industry to realize essential features for smart lighting and increases the
benefits to the end user and the luminaire manufacturers. The XDPL8220 is a digital, highly integrated, future-proof
device combining a quasi-resonant PFC plus a quasi-resonant flyback digital controller with primary side regulation.
The multi control features - constant voltage, constant current, and limited power - enable a highly versatile LED driver
(e.g. window LED driver). The main application field of the XDPL8220 is advanced dual stage LED driver for indoor or
outdoor lighting. The IC is available in a DSO-16 package.
Features and benefits
› Constant current, constant voltage, limited power
with primary side regulation
› PWM dimming input controls respective analog
output current
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over
wide load range
› Nominal input voltage range 100-305 VAC
or 90-430 VDC
› Standby power < 100 mW
› Internal temperature guard with adaptive
thermal management
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
www.infineon.com/xdpl8220
Type Description Ordering code
XDPL8220 Digital dual stage multimode flyback Controller for CC, CV, LP SP001398160
REF-XDPL8220-U30W 30 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630060
REF-XDPL8220-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630066
REF-XDPL8220-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface SP001630068
Order information for XDPL8220
LED driver ICs
Input
volt
age
L
N
GDF
CSF
XDPL8220
GN
PW M
UART GND
VVC
ZC
ART
Vsupply
SPFC
DPFC
S
LED-
LE
D+
PW M
EM P
R_NTC
CoolMOS™
CoolMOS™
Typical application schematic
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
189
60 V linear LED controller IC with voltage feedback loop to primary side
The BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor. The device
supports either NPN bipolar transistors or N-channel MOSFETs to cover a wide LED current and power range up to
several hundred milliamperes. The BCR601 provides feedback to the primary side via an optocoupler to control the
output voltage of the primary side converter, e.g. a flyback. The control loop minimizes the voltage overhead and
power dissipation of the external driver transistor. The voltage overhead can be adjusted by external configuration
according to applications needs.
Features and benefits
› Supports an optocoupler feedback loop to primary side minimizing power losses
› Suppresses the voltage ripple of the power supply driving a constant LED current for hight light quality
› The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs
› Supports wide current range depending on external driver transistor
› Supply voltage range up to 60 V
› Gate driver current 10 mA
› LED current can be adjusted by Rset functionality
› Overtemperature protection and adjustable overvoltage protection
Type Description Ordering code
BCR601 60 V linear LED controller IC with voltage feedback to primary side SP001681722
DEMO_BCR601_60V_IVCTRL Demonstration board BCR601 current and voltage control, 500 mA SP002798056
Order information for BCR601
Typical application schematic
Linear current regulators
N-channel MOSFETs
e.g. OptiMOS™ BSP716N
BCR601
Controller IC
e.g. XDPL8218
VS
OPTO
MFIO
DRV
OVP VDROP
GND
VSENSE
Cin
COVP
ROVP2
ROVP1
Rsense
RDROP
DAC/MCU
e.g. XMC1200
CDROP
Rset
RPI CPI
ROPTO
COPTO ZD1
R
ZENER
LED driver ICs
www.infineon.com/bcr601
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
188
189
LED driver ICs
XDPL8221 - digital dual stage multi-mode flyback controller for CC, CV, LP with
1 percent dimming and serial interface
The XDPL8221 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC with a quasi-resonant
flyback controller with primary side regulation. A serial communication interface supports direct communication with
an external microcontroller unit (MCU). The XDPL8221 is especially designed for advanced LED driver in smart lighting
or IoT applications, featuring flicker-free dimming down to 1 percent of nominal current. The device enables customiz-
able LED driver and simplifies the generation and maintenance of dierent variants without increasing the number of
stock keeping units. The IC is available in a DSO-16 package.
Features and benefits
› Nominal input voltage range 100-305 VAC
or 90-430 VDC
› Reference board eiciency > 90 percent
› Power factor > 0.9 and THD < 15 percent over
wide load range
› UART Interface for control and real-time monitoring
› Constant current, constant voltage, limited power
with primary side regulation
› 1 percent dimming
› Dim-to-o with low standby power < 100 mW
› Internal temperature guard with adaptive thermal
management
› The UART interface and the command set enable
to control the function of the XDPL8221 or inquire
status information
› Multimode operation
– QRM (quasi-resonant mode)
– DCM (discontinuous conduction mode)
– ABM (active burst mode)
› Digital parameters
› Relevant error conditions are monitored and protected
– Undervoltage
– Overvoltage
– Open load
– Output shorted
www.infineon.com/xdpl8221
Type Description Orderable part number
XDPL8221* Digital dual stage multimode flyback Controller for CC, CV, LP with 1 percent dimming XDPL8221XUMA1
REF-XDPL8221-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U50WTOBO1
REF-XDPL8221-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8221U100WTOBO1
Order information for XDPL8221*
Typical application schematic
Input
volt
age
XDPL8221
GDPFC
CSPFC
TEMP
HV
VS
UART PWM PWM
GND
ZCD
VCC
CSFB
GDFB
R_NTC
N
L
LE
D-
LE
D+
UART VsupplyGND
* coming Q1/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
189
60 V linear LED controller IC with voltage feedback loop to primary side
The BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor. The device
supports either NPN bipolar transistors or N-channel MOSFETs to cover a wide LED current and power range up to
several hundred milliamperes. The BCR601 provides feedback to the primary side via an optocoupler to control the
output voltage of the primary side converter, e.g. a flyback. The control loop minimizes the voltage overhead and
power dissipation of the external driver transistor. The voltage overhead can be adjusted by external configuration
according to applications needs.
Features and benefits
› Supports an optocoupler feedback loop to primary side minimizing power losses
› Suppresses the voltage ripple of the power supply driving a constant LED current for hight light quality
› The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs
› Supports wide current range depending on external driver transistor
› Supply voltage range up to 60 V
› Gate driver current 10 mA
› LED current can be adjusted by Rset functionality
› Overtemperature protection and adjustable overvoltage protection
Type Description Ordering code
BCR601 60 V linear LED controller IC with voltage feedback to primary side SP001681722
DEMO_BCR601_60V_IVCTRL Demonstration board BCR601 current and voltage control, 500 mA SP002798056
Order information for BCR601
Typical application schematic
Linear current regulators
N-channel MOSFETs
e.g. OptiMOS™ BSP716N
BCR601
Controller IC
e.g. XDPL8218
VS
OPTO
MFIO
DRV
OVP VDROP
GND
VSENSE
Cin
COVP
ROVP2
ROVP1
Rsense
RDROP
DAC/MCU
e.g. XMC1200
CDROP
Rset
RPI CPI
ROPTO
COPTO ZD1
R
ZENER
LED driver ICs
www.infineon.com/bcr601
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
191
LED driver ICs
BCR40x linear LED Driver ICs for low power LEDs
The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for
driving low power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in
automotive applications such as brake lights or interior.
The advantage over resistor biasing is:
› Long lifetime of LEDs due to constant current in each LED string
› Homogenous LED light output independent of LED forward
voltage binning, temperature increase and
supply voltage variations
The advantage versus discrete semiconductors is:
› Reduced part count and assembly eort
› Pretested output current
› Defined negative temperature co-eicient protection
Features and benefits:
› Output current from 10 to 100 mA (adjustable by external resistor)
› Supply voltage up to 18 V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U, BCR430U)
› Reduction of output current at high temperature, contributing to long lifetime LED systems
› Ease of use
› Very small form factor packages with up to 750 mW max. power handling capability
Low-power LED driver ICs (5-100 mA)
Type Group Topology Vs (min.)
[V]
Vs (max.)
[V]
Iout (typ.)
[mA]
Iout (max.)
[mA]
Dimming Package Ptot (max.)
[ mW]
BCR401U LED drivers for low-power LEDs Linear 1.4 40 10.0 65 PWM by ext. transistor SC74 750
BCR401W LED drivers for low-power LEDs Linear 1.2 18 10.0 60 PWM by ext. transistor SOT343 500
BCR402U LED drivers for low-power LEDs Linear 1.4 40 20.0 65 PWM by ext. transistor SC74 750
BCR402W LED drivers for low-power LEDs Linear 1.4 18 20.0 60 PWM by ext. transistor SOT343 500
BCR405U LED drivers for low-power LEDs Linear 1.4 40 50.0 65 PWM by ext. transistor SC74 750
BCR430U NEW LED driver for low-power LEDs Linear 6 42 Defined by Rset 100 PWM by ext. transistor SOT23 600
www.infineon.com/bcr
ILED [mA]
Vdrop [mV]
Rset = 9.1 kΩ
Rset = 6.2 kΩ
40
30
50
60
70
80
90
100
110
100150 200250 300350 40
0
The voltage drop at the integrated LED
driver stage can go down to 135 mV at
50 mA and less improving the overall
system eiciency and providing extra
voltage headroom to compensate for
tolerances of LED forward voltage or supply
voltage. With the BCR430U, additional LEDs
can be added to lighting designs without
changing the supply voltage.
LED current versus voltage drop (VS = 24 V)
NEW: Ultralow voltage drop version BCR430U with only 135 mV at 50 mA
Needing more details on
replacing resistors?
Take a look at the application note
"Driving low power LEDs from
10 to 65 mA LED driver ICs with
BCR401W and BCR402W family"
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
190
191
www.infineon.com/bcr602
60 V linear LED controller IC for dimmable LED applications
The BCR602 is a linear LED controller IC regulating the LED current with an external driver transistor. The BCR602
supports either NPN bipolar transistor or N-channel MOSFETs to cover a wide LED current and power range up to
several amperes. The LED current is fully scalable by dimensioning an external current sense resistor.
Features and benefits
› Suppresses the voltage ripple of the power supply dring a constant LED current for high light quality
› The LED current can be dimmed by resistors as well as analog or digital PWM voltages connected to the
multifunction input-output (MFIO) pin
› The embedded hot plug protection allows plug in and plug out of any LED load during operation without
damaging the LEDs
› Supports wide current range depending on external driver transistor
› Supply voltage range up to 60 V makes it ideal for 48 V designs
› Gate driver current 10 mA
› LED current can be adjusted by Rset functionality
› Overtemperature protection
Type Description Ordering code
BCR602 60 V linear LED controller IC SP001681730
DEMO_BCR602_60V_IVCTRL Demonstration board BCR602U current control, 200 mA SP002798054
Order information for BCR602
Typical application schematic
N-channel MOSFETs
e.g. OptiMOS™ BSP716N
Rpred
BCR602
DRV
GND
VSENSE
VS
MFIO
R1Rset
DAC
PWM
Controller IC
e.g. XDPL8218
Microcontroller
e.g. XMC1200
V
LED driver ICs
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
191
LED driver ICs
BCR40x linear LED Driver ICs for low power LEDs
The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for
driving low power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in
automotive applications such as brake lights or interior.
The advantage over resistor biasing is:
› Long lifetime of LEDs due to constant current in each LED string
› Homogenous LED light output independent of LED forward
voltage binning, temperature increase and
supply voltage variations
The advantage versus discrete semiconductors is:
› Reduced part count and assembly eort
› Pretested output current
› Defined negative temperature co-eicient protection
Features and benefits:
› Output current from 10 to 100 mA (adjustable by external resistor)
› Supply voltage up to 18 V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U, BCR430U)
› Reduction of output current at high temperature, contributing to long lifetime LED systems
› Ease of use
› Very small form factor packages with up to 750 mW max. power handling capability
Low-power LED driver ICs (5-100 mA)
Type Group Topology Vs (min.)
[V]
Vs (max.)
[V]
Iout (typ.)
[mA]
Iout (max.)
[mA]
Dimming Package Ptot (max.)
[ mW]
BCR401U LED drivers for low-power LEDs Linear 1.4 40 10.0 65 PWM by ext. transistor SC74 750
BCR401W LED drivers for low-power LEDs Linear 1.2 18 10.0 60 PWM by ext. transistor SOT343 500
BCR402U LED drivers for low-power LEDs Linear 1.4 40 20.0 65 PWM by ext. transistor SC74 750
BCR402W LED drivers for low-power LEDs Linear 1.4 18 20.0 60 PWM by ext. transistor SOT343 500
BCR405U LED drivers for low-power LEDs Linear 1.4 40 50.0 65 PWM by ext. transistor SC74 750
BCR430U NEW LED driver for low-power LEDs Linear 6 42 Defined by Rset 100 PWM by ext. transistor SOT23 600
www.infineon.com/bcr
ILED [mA]
Vdrop [mV]
Rset = 9.1 kΩ
Rset = 6.2 kΩ
40
30
50
60
70
80
90
100
110
100150 200250 300350 40
0
The voltage drop at the integrated LED
driver stage can go down to 135 mV at
50 mA and less improving the overall
system eiciency and providing extra
voltage headroom to compensate for
tolerances of LED forward voltage or supply
voltage. With the BCR430U, additional LEDs
can be added to lighting designs without
changing the supply voltage.
LED current versus voltage drop (VS = 24 V)
NEW: Ultralow voltage drop version BCR430U with only 135 mV at 50 mA
Needing more details on
replacing resistors?
Take a look at the application note
"Driving low power LEDs from
10 to 65 mA LED driver ICs with
BCR401W and BCR402W family"
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
193
LED driver ICs
DC-DC switch mode LED driver ICs
ILD8150/ILD8150E* – 80 V DC-DC buck LED driver IC for high-power LEDs
and high-performance hybrid dimming
The ILD8150 is 80 V DC-DC converter IC, designed to be used in LED applications to drive high power LEDs. For
applications operating close to safe extra low voltage (SELV) limits, it provides a high safety voltage margin. The buck
LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side
integrated switch. Several performance and protection features provide the right fit for professional LED lighting.
The hysteretic current control provides an extremely fast regulation and stable LED current combined with good EMI
performance. The eiciency of the LED driver IC is remarkably high, reaching more than 95 percent eiciency over a
wide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from
100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz.
Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for the use together
with microcontrollers. Precise output current accuracy from device to device under all loads and input voltages
conditions makes it perfect for tunable white and flat panel designs where current must be identical string to string.
Features and benefits
› Wide input voltage ranging from 8–80 VDC
› Up to 1.5 A average output current, adjustable
via shunt resistor
› Eiciency > 95 percent
› Up to 2 MHz switching frequency
› So-start
› PWM dimming input, with 250 Hz to 20 kHz PWM
dimming frequency
› Hybrid dimming for flicker free light down to 0.5 percent
– Analog dimming 100 percent – 12.5 percent
– PWM dimming 12.5 percent – 0.5 percent with 3.4
kHz flicker-free modulation, dim-to-o
› Typical 3 percent output current accuracy
› Overtemperature protection
› Pull-down transistor to avoid LED glowing in dim-to-o
› DSO-8 package to enable wave soldering
› DSO-8 with exposed pad for higher thermal performance
(ILD8150E)
BOOT
DIM SW
CS
VCC
GND
ILD8150/ILD8150E
SD
VIN
80
V
www.infineon.com/lowcostleddriver
Type Description Ordering code Package
ILD8150 80 V DC-DC buck LED driver IC SP001805682 DSO-8
ILD8150E 80 V DC-DC buck LED driver IC SP001805686 DSO-8 exposed pad
REF_ILD8150_DC_1.5A Reference design board 1.5 A SP002798058 Board with ILD8150E
* coming Q2/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
192
193
www.infineon.com/bcr
LED driver ICs
Type Group Topology Vs (min.)
[V]
Vs (max.)
[V]
Iout (typ.)
[mA]
Iout (max.)
[mA]
Dimming Package Ptot (max.)
[ mW]
BCR320U LED drivers for mid-power LEDs Linear 1.4 24 250 300 No SC74 1000
BCR321U LED drivers for mid-power LEDs Linear 1.4 24 250 300 Digital input SC74 1000
BCR420U LED drivers for mid-power LEDs Linear 1.4 40 150 200 No SC74 1000
BCR421U LED drivers for mid-power LEDs Linear 1.4 40 150 200 Digital input SC74 1000
BCR450 LED controller Linear 3.0 27 70 Ext. switch Digital input SC74 500
BCR601 LED controller Linear 8.0 60 Ext. switch Ext. switch Analog PG-DSO-8 360
BCR602 LED controller Linear 8.0 60 Ext. switch Ext. switch Analog/PWM PG-SOT23-6 360
BCR32x/BCR42x/BCR450/BCR601/BCR602 linear LED driver and controller ICs
for medium and high power LEDs
The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5 W LEDs with a maximum output current
of 250 mA. They are optimized in terms of cost, size and feature set for medium power LEDs in general lighting applications.
Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior.
Features and benefits
› Output current from 10 mA up to 300 mA for BCR32x (200 mA for BCR42xU), adjustable by external resistor
› Supply voltage up to 40V for BCR42x (24 V for BCR32x)
› Direct microcontroller interface for PWM dimming with BCR321U/BCR421U
› Reduction of output current at high temperature, contributing to long lifetime LED systems
› Ease of use
› Very small form factor packages with up to 1000 mW max. power handling capability
Medium- and high-power LED driver ICs
RSENSE
(optional)
VS
Von:
BCR320
BCR420
Von:
BCR321
BCR421
+
–
Microcontroller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
193
LED driver ICs
DC-DC switch mode LED driver ICs
ILD8150/ILD8150E* – 80 V DC-DC buck LED driver IC for high-power LEDs
and high-performance hybrid dimming
The ILD8150 is 80 V DC-DC converter IC, designed to be used in LED applications to drive high power LEDs. For
applications operating close to safe extra low voltage (SELV) limits, it provides a high safety voltage margin. The buck
LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side
integrated switch. Several performance and protection features provide the right fit for professional LED lighting.
The hysteretic current control provides an extremely fast regulation and stable LED current combined with good EMI
performance. The eiciency of the LED driver IC is remarkably high, reaching more than 95 percent eiciency over a
wide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from
100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz.
Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for the use together
with microcontrollers. Precise output current accuracy from device to device under all loads and input voltages
conditions makes it perfect for tunable white and flat panel designs where current must be identical string to string.
Features and benefits
› Wide input voltage ranging from 8–80 VDC
› Up to 1.5 A average output current, adjustable
via shunt resistor
› Eiciency > 95 percent
› Up to 2 MHz switching frequency
› So-start
› PWM dimming input, with 250 Hz to 20 kHz PWM
dimming frequency
› Hybrid dimming for flicker free light down to 0.5 percent
– Analog dimming 100 percent – 12.5 percent
– PWM dimming 12.5 percent – 0.5 percent with 3.4
kHz flicker-free modulation, dim-to-o
› Typical 3 percent output current accuracy
› Overtemperature protection
› Pull-down transistor to avoid LED glowing in dim-to-o
› DSO-8 package to enable wave soldering
› DSO-8 with exposed pad for higher thermal performance
(ILD8150E)
BOOT
DIM SW
CS
VCC
GND
ILD8150/ILD8150E
SD
VIN
80
V
www.infineon.com/lowcostleddriver
Type Description Ordering code Package
ILD8150 80 V DC-DC buck LED driver IC SP001805682 DSO-8
ILD8150E 80 V DC-DC buck LED driver IC SP001805686 DSO-8 exposed pad
REF_ILD8150_DC_1.5A Reference design board 1.5 A SP002798058 Board with ILD8150E
* coming Q2/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
195
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
194
195
DC-DC switch mode LED driver ICs
ILD series DC-DC switch mode LED driver ICs
The ILD series are switch mode LED driver ICs for high power LEDs. They combine protection features that contribute
to the lifetime of LEDs with the flexibility in output current range up to multiple amperes. The new ILD series include
LED driver ICs with integrated power stage, as well as with external MOSFET achieving up to 98 percent driver eiciency
across a wide range of general lighting applications.
Type V
s
(min.)
[V]
V
s
(max).
[V]
I
out
(typ.)
[mA]
I
out
(max.)
[mA]
Package Dimming Topology f
sw
Features
ILD1151 4.5 45 90 3.000 SSOP-14 Analog/digital
Boost,
buckboost
SEPIC
Adjustable
100 kHz-500
kHz
Multi topology controller, constant current
or constant voltage mode, overvoltage,
overcurrent, short on GND protection
ILD6070 4.5 60 Selectable
by resistor
700 DSO-8
exposed
pad
Digital output
Hysteretic
buck
1 MHz Integrated switch rated up to 700 mA,
PWM or analog dimming input, adjustable
overtemperature protection, overcurrent
protection
ILD6150 4.5 60 Selectable
by resistor
1.500 DSO-8
exposed
pad
Digital output
Hysteretic
buck
1 MHz Integrated switch rated up to 1.500 mA,
PWM or analog dimming input, adjustable
overtemperature protection, overcurrent
protection
ILD8150* 8
80
Selectable
by resistor
1.500
DSO-8 Hybrid (analog down to
12% and PWM down to
0,5%)dimming output
Hysteretic
buck
2 MHz Integrated 80 V switch rated up to 1.500
mA with low RDS(on), hybrid dimming down
to 0.5%, UVLO, thermal protection, digital
so-start, flicker-free operation
ILD8150E* 8
80
Selectable
by resistor
1.500 DSO-8
exposed
pad
Hybrid (analog down to
12% and PWM down to
0,5%) dimming output
Hysteretic
buck
2 MHz Integrated 80 V switch rated up to 1.500
mA with low RDS(on), hybrid dimming down
to 0.5%, UVLO, thermal protection, digital
so-start, flicker-free operation
Features and benefits
› Wide input voltage range up to 80 V
› Scalability in output current from 90 mA up to
multiple amperes
› Alternative dimming concepts: digital or analog
› Hybrid dimming: analog and digital output combined
for flicker free light down to 0.5 percent realized
with ILD8150
› Superior adjustable overtemperature protection for
ILD6150 and ILD6070 contributing to longer
LED lifetime
› Overvoltage and overcurrent protection
› ILD1151 supports boost, buck-boost and SEPIC
topologies
(op
tional for
so
start)
www.infineon.com/ild
LED driver ICs
* coming Q2/2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
195
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
197
Ballast control IC
Ballast control ICs
Infineon's solutions for fluorescent lamps
Ballast control ICs from Infineon integrate all functions required to operate FL lamps such as preheat, ignition and
run-mode and protection features.
› Integrated high performance PFC stage
› Intelligent digital/mixed signal power control
› Integrated high voltage half-bridge driver
› All parameters set using only resistors
› Highly accurate timing and frequency control over a wide temperature range
› Dierent types for single, series and parallel lamps
Features
› Able to handle lamp chokes with higher saturation
behavior
› Separate adjustable levels of lamp overload and
rectifier eect detection
› Adjustment of the preheat time
› No high voltage capacitor required for detection of
lamp removal (capacitive mode operation)
› Automatically restarts by surge and inverter
overcurrent events
› Self-adapting dead time adjustment of the
half-bridge driver
Benefits
› Optimized lamp choke size
› Dramatically reduced time for key tests such as end of
life detection, preheat/ignition timeout and pre-run
operation modes
› Suitable for dimming and multi-power ballasts
› Enables ballast compatibility with a wider range of
lamp types
› Flexible support of both current and voltage mode
preheating
› Reduced BOM costs
› Intelligent distinguishing between surge and
half-bridge overcurrent events
› Meets standards for emergency lighting (according to
DIN VDE 0108)
› Eases design of multi-power ballasts and reduces EMI
› Enhanced reliability of ballasts
PFC controller
Ballast controller
HV-driver
Function ICB2FL03G ICB2FL02G ICB2FL01G
Capacitive load protection Activated Deactivated Activated
Suitable for dimming ✓✓✓
Max. adjustable run frequency 140 kHz 140 kHz 120 kHz
Package SO-16 small body SO-19 wide body SO-19 wide body
Driver capability 650V 900V 900V
Lamp connection Single and series Single, series and parallel Single, series and parallel
www.infineon.com/lighting-ics
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
196
197
Dimming solution
CDM10V and CDM10VD –
most flexible dimming interface ICs for 0–10 V
Infineon’s fully integrated dimming solutions
Infineon’s CDM10V and CDM10VD are the industry’s first single-chip lighting interface ICs. They are capable of
transforming an analog 0–10 V input into a PWM or dimming input signal, required by a lighting controller IC. CDM10V
and CDM10VD devices are dedicated for commercial and industrial LED lighting applications. The compact and highly
integrated devices allow designers to replace up to 25 discrete components, used in conventional 0–10 V dimming
schemes, with a single device. Supplied in an ultra-miniature 6-pin SOT package, the CDM10Vx and CDM10VDx
perfectly match small PCBs with high component densities.
Key features
› Active dimming (0–10 V) and passive dimming (resistor)
› Embedded digital signal processing which maintains
› minimum variations from device to device
› PWM input
› One-time configurable device: CDM10V and
preconfigured devices with various feature set
s
Key benefits
› Single-device solution leading to low BOM and PCB savings
› Dimming ICs in small SOT-23 package for high power
density designs
› Granular portfolio for highest flexibility and easy design-in
› Wide input VCC range 11–25 V, extended range down to
6 V for CDM10V
› Attractive pricing and faster time to market
www.infineon.com/cdm10V
Product type Iout
[mA]
Min. duty cycle
[%]
PWM output
frequency [kHz]
Dimmer/resistor
bias current [μA]
Dimm-to-O OPN SP number
CDM10V 5 1/2/5/10 0.2/0.5/1/2 50/100/200/500 Disabled/enabled CDM10VXTSA1 SP001424754
CDM10V-2 5 n.a. 1 200 Enabled CDM10V2XTSA1 SP001684884
CDM10V-3 5 1 1 200 Disabled CDM10V3XTSA1 SP001715882
CDM10V-4 5 n.a. 2 100 Enabled CDM10V4XTSA1 SP001727960
CDM10VD 5 5 1 120 Enabled CDM10VDXTSA1 SP001619792
CDM10VD-2 5 10 1 120 Enabled CDM10V2DXTSA1 SP001619794
CDM10VD-3 1 5 1 120 Enabled CDM10V3DXTSA1 SP001619796
CDM10VD-4 1 10 1 120 Enabled CDM10V4DXTSA1 SP001630006
Board name Description SP number
COOLDIM_PRG_BOARD Configuration board for CDM10V only SP001493166
REF-XDPL8220-U30W 30 W two stage PFC FB digital power, eicient and flicker free reference design with CDM10V SP001630060
REF-XDPL8105-CDM10V 40 W single stage PFC FB digital power reference design with CDM10V SP001649474
› 0–10 V interface
› Resistor/potentiometer
› PWM-generator
ICL8105
CDM10V
VCC supply
11–25 V LDOVCC
Iout
GND
Rdim+
RxD
VFSS
OSC
Bandgap
UVLO
FSMeFuses
8-bit
PWM_gen
DigitalAnalog
UART
Current
source
DIM
ADC
8-bit
Current
source
PWM_out
85–
305 V AC
Linefilter
Typical application schematic using CDM10V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
197
Ballast control IC
Ballast control ICs
Infineon's solutions for fluorescent lamps
Ballast control ICs from Infineon integrate all functions required to operate FL lamps such as preheat, ignition and
run-mode and protection features.
› Integrated high performance PFC stage
› Intelligent digital/mixed signal power control
› Integrated high voltage half-bridge driver
› All parameters set using only resistors
› Highly accurate timing and frequency control over a wide temperature range
› Dierent types for single, series and parallel lamps
Features
› Able to handle lamp chokes with higher saturation
behavior
› Separate adjustable levels of lamp overload and
rectifier eect detection
› Adjustment of the preheat time
› No high voltage capacitor required for detection of
lamp removal (capacitive mode operation)
› Automatically restarts by surge and inverter
overcurrent events
› Self-adapting dead time adjustment of the
half-bridge driver
Benefits
› Optimized lamp choke size
› Dramatically reduced time for key tests such as end of
life detection, preheat/ignition timeout and pre-run
operation modes
› Suitable for dimming and multi-power ballasts
› Enables ballast compatibility with a wider range of
lamp types
› Flexible support of both current and voltage mode
preheating
› Reduced BOM costs
› Intelligent distinguishing between surge and
half-bridge overcurrent events
› Meets standards for emergency lighting (according to
DIN VDE 0108)
› Eases design of multi-power ballasts and reduces EMI
› Enhanced reliability of ballasts
PFC controller
Ballast controller
HV-driver
Function ICB2FL03G ICB2FL02G ICB2FL01G
Capacitive load protection Activated Deactivated Activated
Suitable for dimming ✓✓✓
Max. adjustable run frequency 140 kHz 140 kHz 120 kHz
Package SO-16 small body SO-19 wide body SO-19 wide body
Driver capability 650V 900V 900V
Lamp connection Single and series Single, series and parallel Single, series and parallel
www.infineon.com/lighting-ics
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
199
www.infineon.com/ipol
www.infineon.com/analog-ipol
IPOL
Point-of-load products – how to choose
DC-DC IPOL portfolio
DC-DC products
1 to 35 A
Analog voltage mode IPOL
3-35A
Flexibility/low jitter/low ripple/constant
frequency operations
IR389x/IR384x/IR344x/IR3823
› Programmable fsw up to 1.5 MHz
› Transient
› Tracking
› Remote sense
› Telemetry
› Margining
› Intel SVID Support
› Parallel VID
› IR3806x: 6-35 A with PMBus™
› I
R3816x: 15 A, 30 A with PMBus™ and Intel SVID
› IR38263: 30 A with PVID and PMBus™
› 50 mA light load eiciency = 75%
(12 Vin →1.2 Vout)
IPOL with digital interface
PMBus™ digital IPOL Constant on-time IPOL
Easy/light-load eiciency
IR3883: 3 A
V
EnFCCMPVIN
VIN
PGOOD PGOOD
Vo
4.5 V < V
in
< 54 V
EnFCCM
Boot
SW
PGND
Vo
Fb
Gnd PGnd OCSet
V
IN
PGOOD
SCL
SDA
SAlert
RS+
RS–
PV
IN
Boot
SW VO
Power
good
V
in
Inventory
Configuration
Control
Telemetry
Status
Device ID
On/o configuration
fault/warnings
Sequencing delay/ramp
fault response
V
out
, I
out
, power
temperature, peak values
Comms, data, temps
Digital mode: I2C/PMBus™ interface
Dierential remote sense for
optimum output accuracy
PMBus™ IC capabilities
90
85
80
75
70
65
60
55
50
0.01 0.1 1
Load current
Eiciency (12 Vin , 1.2 Vout , 800 kHz)
PGOOD
V/
LDO_out
PVIN
VIN
12 V
V
PGOOD
R1
Enable Comp
Fb
Vsns
ILIM
SW
Boot
GND PGND
Digital interface IPOL Analog interface IPOL
I²C PMBus™, telemetry, margin, faults, SVID PVID
Digital control/configuration, telemetry and diagnostic
Part num-
ber
Max. cur-
rent
[A]
Package
size
[mm]
Max.
Vin
Max. fsw Distinctive
features
IR38064 35 5 x 7 21 V 1500 KHz
PMBus™
IR38063 25 5 x 7 21 V 1500 KHz
IR38062 15 5 x 7 21 V 1500 KHz
IR38060 6 5 x 6 16 V 1500 KHz
IR38163 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38165 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38363 15 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38365 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38263 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
PVID + PMBus™
IR38265 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID
IR38164 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™,
enhanced Imon
IRPS5401
4+4+2+2+0.5
7 x 7 14 V 1500 KHz 5 output PMIC,
PMBus™
„Performace“ voltage mode PWM
Ultralow jitter and noise, high accuracy and low ripple
Part num-
ber
Max. cur-
rent
[A]
Package
size
[mm]
Max.
Vin
Max. fsw Distinctive
features
IR3883 3 3 x 3 14 V 800 KHz Constant-on-time
IR3823 3 3.5 x 3.5 21 V 1500 KHz 3 so start
IR3897 4 4 x 5 21 V 1500 KHz
DDR tracking and
analog voltage
margin/AVSO
IR3898 6 4 x 5 21 V 1500 KHz
IR3899 9 4 x 5 21 V 1500 KHz
IR3894 12 5 x 6 21 V 1500 KHz
IR3895 16 5 x 6 21 V 1500 KHz
IR3826 23 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3826A 16 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3448 16 5 x 6 21 V 1500 KHz True dierential
remote sensing for
accuracy and ther-
mally enhanced
Cu clip package
IR3847 25 5 x 6 21 V 1500 KHz
IR3846 35 5 x 7 21 V 1500 KHz
IR3891 4+4 5 x 6 21 V 1500 KHz Dual output for
density and
out-of-phase
for less input
capacitor
IR3892 6+6 5 x 6 21 V 1500 KHz
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
198
199
IPOL
T
he digital interface IPOL devices are easy-to-use, fully integrated and highly eicient DC-DC regulator oering
I2C/PMBus™, parallel VID, Intel SVID. The on-board PWM controller and MOSFETs make the family a space-eicient
solution, providing accurate power delivery for low output voltage and high current applications.
The IR3806x family of PMBus™ enabled IR MOSFET™ IPOL based SupIRBuck™ voltage regulators oers:
› Compactness of integrated controller, driver and MOSFETs
› High performance analog voltage mode engine
› Flexibility of a rich PMBus™ interface
The IR381(2/3)6x family features OptiMOS™ 5 for the highest eiciency and adds Intel SVID support (IR381(/3)6x) for
Intel based systems or parallel VID (IR3826x) for voltage scaling or 8 programmable output voltages booting options to
avoid programming at start up. Pin compatible options with and without PMBus™ are available to allow the flexibility
of using PMBus™ only during evaluation or easily upgrade a system to PMBus™ without re-layout.
Main features
› PMBus™ revision 1.2 compliant
› ≥ 66 PMBus™ commands
› Wide input voltage range and single
5 V – 16 V input operations
› Dierential remote sense
› Ultralow jitter voltage mode eingine
› Operation temp: -40° to 125° C
Main benefits
› Only single chip solution with extensive PMBus™,
parallel VID, Intel SVID support allows 50 percent
space saving versus external power competition
› Intel SVID support for Intel-based systems
› Parallel VID or PMBus™ for voltage setting and margining
› Telemetry status via digital bus
› Remote monitoring and update
› Parameter changes by register
› Flexible sequencing
› High accuracy low ripple
› Integrated sequencing, margin, current and
voltage monitoring
Analog IPOL voltage regulators
High eiciency and accuracy: Our point-of-load converters integrate a PWM controller, driver and MOSFETs into a small
PQFN package for ease-of-use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies
to deliver ultra compact layouts and smallest bill-of-materials. It features wide operating temperature ranging from
operating temperature from -40° to 125°C.
www.infineon.com/ipol
Integrated point-of-load converters
Digital interface IPOL voltage regulators
PQFN 5x7 mm
PQFN 5x6 mm
PQFN 4x5 mm
35 A Iout
PQFN 3.5x3.5 mm
PQFN 3x3 mm
1 A
~1 – 3 A
~2 – 10 A
~6 – 25 A
~20 – 35 A
Integrated POL portfolioMain benefits
› Enhanced voltage mode PWM devices oer high accuracy,
ultralow ripple and noise and higher control bandwidth
for less capacitors
› Scalable solutions from 3 to 35 A
› For designs requiring high density, low cost and easy design,
the family includes a 3 A device with enhanced stability
constant-on-time engine that does not require external
compensation enabling easy designs and fast time to marke
t
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
199
www.infineon.com/ipol
www.infineon.com/analog-ipol
IPOL
Point-of-load products – how to choose
DC-DC IPOL portfolio
DC-DC products
1 to 35 A
Analog voltage mode IPOL
3-35A
Flexibility/low jitter/low ripple/constant
frequency operations
IR389x/IR384x/IR344x/IR3823
› Programmable fsw up to 1.5 MHz
› Transient
› Tracking
› Remote sense
› Telemetry
› Margining
› Intel SVID Support
› Parallel VID
› IR3806x: 6-35 A with PMBus™
› I
R3816x: 15 A, 30 A with PMBus™ and Intel SVID
› IR38263: 30 A with PVID and PMBus™
› 50 mA light load eiciency = 75%
(12 Vin →1.2 Vout)
IPOL with digital interface
PMBus™ digital IPOL Constant on-time IPOL
Easy/light-load eiciency
IR3883: 3 A
V
EnFCCMPVIN
VIN
PGOOD PGOOD
Vo
4.5 V < V
in
< 54 V
EnFCCM
Boot
SW
PGND
Vo
Fb
Gnd PGnd OCSet
V
IN
PGOOD
SCL
SDA
SAlert
RS+
RS–
PV
IN
Boot
SW VO
P
ower
g
ood
V
in
Inventory
Configuration
Control
Telemetry
Status
Device ID
On/o configuration
fault/warnings
Sequencing delay/ramp
fault response
V
out
, I
out
, power
temperature, peak values
Comms, data, temps
Digital mode: I2C/PMBus™ interface
Dierential remote sense for
optimum output accuracy
PMBus™ IC capabilities
90
85
80
75
70
65
60
55
50
0.01 0.1 1
Load current
Eiciency (12 Vin , 1.2 Vout , 800 kHz)
PGOOD
V/
LDO_out
PVIN
VIN
12 V
V
PGOOD
R1
Enable Comp
Fb
Vsns
ILIM
SW
Boot
GND PGND
Digital interface IPOL Analog interface IPOL
I²C PMBus™, telemetry, margin, faults, SVID PVID
Digital control/configuration, telemetry and diagnostic
Part num-
ber
Max. cur-
rent
[A]
Package
size
[mm]
Max.
Vin
Max. fsw Distinctive
features
IR38064 35 5 x 7 21 V 1500 KHz
PMBus™
IR38063 25 5 x 7 21 V 1500 KHz
IR38062 15 5 x 7 21 V 1500 KHz
IR38060 6 5 x 6 16 V 1500 KHz
IR38163 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38165 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38363 15 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™
IR38365 15 5 x 7 16 V 1500 KHz OptiMOS™ 5, SVID
IR38263 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
PVID + PMBus™
IR38265 30 5 x 7 16 V 1500 KHz OptiMOS™ 5, PVID
IR38164 30 5 x 7 16 V 1500 KHz OptiMOS™ 5,
SVID + PMBus™,
enhanced Imon
IRPS5401
4+4+2+2+0.5
7 x 7 14 V 1500 KHz 5 output PMIC,
PMBus™
„Performace“ voltage mode PWM
Ultralow jitter and noise, high accuracy and low ripple
Part num-
ber
Max. cur-
rent
[A]
Package
size
[mm]
Max.
Vin
Max. fsw Distinctive
features
IR3883 3 3 x 3 14 V 800 KHz Constant-on-time
IR3823 3 3.5 x 3.5 21 V 1500 KHz 3 so start
IR3897 4 4 x 5 21 V 1500 KHz
DDR tracking and
analog voltage
margin/AVSO
IR3898 6 4 x 5 21 V 1500 KHz
IR3899 9 4 x 5 21 V 1500 KHz
IR3894 12 5 x 6 21 V 1500 KHz
IR3895 16 5 x 6 21 V 1500 KHz
IR3826 23 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3826A 16 5 x 6 17 V 1500 KHz OptiMOS™ 5,
3-level OCP
IR3448 16 5 x 6 21 V 1500 KHz True dierential
remote sensing for
accuracy and ther-
mally enhanced
Cu clip package
IR3847 25 5 x 6 21 V 1500 KHz
IR3846 35 5 x 7 21 V 1500 KHz
IR3891 4+4 5 x 6 21 V 1500 KHz Dual output for
density and
out-of-phase
for less input
capacitor
IR3892 6+6 5 x 6 21 V 1500 KHz
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
201
IFX1051 key features
› Fully compatible to ISO 11898-2
› Wide common mode range for EMI
› Very low EME
› Excellent ESD robustness
› Guaranteed loop delay symmetry to support
CAN FD data frames up to 2 Mbit/s
› VIO input for voltage adaption to the
microcontroller supply
› Extended supply range on VCC and VIO supply
› CAN short-circuit proof to ground, battery and VCC
› TxD time-out function with very long TxD timeout timing
› Low CAN bus leakage current in power-down state
› Overtemperature protection
› Protected against transients
› Receive-only mode
› Green product (RoHS compliant)
› Two package options: tiny package PG-TSON-8 or
standard package PG-DSO-8
IFX1051 key benefits
› Cost eicient replacement to industry market
standard device *1051
› High-speed communication up to 2 Mbit/s
› Wide temperature range
CAN FD IFX1051 block diagram
=
VCC
VCC/2
Bus-biasing
TxD
Rx
D
INH
CANH
7
6
CANL
2
GND
3
1
V33
5
8
4
Output
stage Temperature
protection
Mode
control
Driver
Receiver
www.infineon.com/industrial-transceivers
CAN transceivers
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
200
201
CAN transceivers
CAN transceivers
Proven quality for power management applications
Our CAN transceivers provide proven quality, reliable track records and high robustness in automation applications.
They feature excellent electromagnetic performance and low levels of electromagnetic interference (EMI), and are
designed for ISO compliance. While our IFX1050G, IFX1050GVIO and IFX1040SJ devices are optimized for high-speed
CAN communication, the new IFX1051 transceiver family addresses the upcoming CAN FD (flexible data rate) markets
beyond 1 Mbit/s.
Key features
› Transmission rates up to 2 Mbit/s ISO11898 compliant
› Low-power modes
› Receive-only mode
› Standby/sleep mode
› Bus wake-up
› Thermal protection
› CAN FD compliance
Key benefits
› Low current consumption
› Thermal protection
› Low power modes
› Excellent EMI performance and EMI robustness
› Standby/sleep mode
› Pin-to-pin replacements for industry-standard parts
CAN FD transceiver
In addition to the classic CAN transceiver portfolio, Infineon is also oering a CAN FD transceiver. By using two reserved
bits in the protocol, CAN FD will boost the baudrate of CAN systems. The so-called “bit-rate-switch"(BRS) bit increases
the bit rate within the CAN data field from 1 to 2 Mbit/s whereas the so-called "extended-data-length" (EDL) bit
increased "payload" from 8 bytes to 64 bytes resulting in higher bandwith.
The Infineon CAN FD transceiver IFX1051, designed for HS CAN networks in industrial applications, acts as an interface
between the physical bus layer and the CAN protocol controller - it drives the signals to the bus and protects the
microcontroller against interferences generated within the network. Based on the high symmetry of the CANH and
CANL signals, the IFX1051 provides a very low level of electromagnetic emission (EME) within a wide frequency range.
Product number Package Transceiver type ISO compliance Transmission rate (max.)
IFX1050G PG-DSO-8 High-speed CAN ISO11898-2 1 Mbps
IFX1050GVIO PG-DSO-8 High-speed CAN ISO11898-2 1 Mbps
IFX1040SJ PG-DSO-8 High-speed CAN ISO11898-2, ISO11898-5 1 Mbps
IFX1051SJ PG-DSO-8 CAN FD ISO 11898-2 2 Mbps
IFX1051LE PG-TSON-8 CAN FD ISO 11898-2 2 Mbps
Product portfolio
www.infineon.com/industrial-transceivers
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
201
IFX1051 key features
› Fully compatible to ISO 11898-2
› Wide common mode range for EMI
› Very low EME
› Excellent ESD robustness
› Guaranteed loop delay symmetry to support
CAN FD data frames up to 2 Mbit/s
› VIO input for voltage adaption to the
microcontroller supply
› Extended supply range on VCC and VIO supply
› CAN short-circuit proof to ground, battery and VCC
› TxD time-out function with very long TxD timeout timing
› Low CAN bus leakage current in power-down state
› Overtemperature protection
› Protected against transients
› Receive-only mode
› Green product (RoHS compliant)
› Two package options: tiny package PG-TSON-8 or
standard package PG-DSO-8
IFX1051 key benefits
› Cost eicient replacement to industry market
standard device *1051
› High-speed communication up to 2 Mbit/s
› Wide temperature range
CAN FD IFX1051 block diagram
=
VCC
VCC/2
Bus-biasing
TxD
Rx
D
INH
CANH
7
6
CANL
2
GND
3
1
V33
5
8
4
Output
stage Temperature
protection
Mode
control
Driver
Receiver
www.infineon.com/industrial-transceivers
CAN transceivers
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
203
DC-DC converters
www.infineon.com/industrial-dcdc-converters
DC-DC converters
Robust range of converters for the widest application spectrum
Our high-eiciency switching regulators and controllers help to reduce energy consumption. In addition to extending
the operating time of battery powered systems, they also significantly improve the thermal budget of the application.
Overall, this translates into minimal operating costs. For your design flexibility, they are available as adjustable voltage
variants as well as with dedicated fixed output voltage values.
Key features
› Input voltage up to 60V
› Output currents going from 500 mA up to 10 A
› Switching frequencies ranging from 100 kHz to 2.2 MHz
› Shutdown quiescent current down to below 2 µA
› Current limitation and overtemperature protection
› Enable feature
Key benefits
› High-eiciency regulation
› Only a few external components needed for stable
regulation
› Perfectly suited for regulation in pre-/post-regulation
power supply architectures
So-start ramp
generator
Charge pump
Bandgap
reference
Overtemperature
shutdown
Enable
Buck
converter
Oscillator
Feed forward
7
EN
IFX91041
V
S
3
BUO
BDS
FB
1
2
8
5
COMP
SYNC
GND
6
4
45 V
≤1 A
≥2 A
>1 A
> 45 V … 60 V
Maximum input voltage
Output current
IFX90121
5 V
2.2 MHz
500 mA
IFX91041
Adj., 5 V, 3.3 V
370 kHz
1.8 A
IFX80471
Adj., 5 V
60 V, 360 kHz
2.3 A
IFX81481
Adj.
Synchronous
controller
10 A
Output current
IFX91041 block diagram Industrial DC-DC buck regulators (selection tree)
DC-DC converters
Part number VQ (multiple)
Output current
type
Output current
[A]
Product features Package
IFX81481ELV Adjustable
Buck controller
10.0 10 A synchronous DC-DC adjustable step down controller;
f = 100 kHz-700 kHz, N
PG-SSOP-14
IFX90121EL V50 5.0V
Buck converter
0.5 Vin up to 45 V, 2.2 MHz step-down regulator with low quiescent current PG-SSOP-14
IFX80471SK V Adjustable
Buck controller
2.3 Vin up to 60V; VQ adjustable from 1.25 V up to 15 V; external MOSFET PG-DSO-14
IFX80471SK V50 5.0V
Buck controller
2.3 Vin up to 60V; external MOSFET PG-DSO-14
IFX91041EJV Adjustable
Buck converter
1.8 VQ adjustable from 0.6 V up to 16 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V33 3.3 V
Buck converter
1.8 VQ fixed to 3.3 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V50 5.0V
Buck converter
1.8 VQ fixed to 5.0V; tolerance 2% up to 1000 mA PG-DSO-8
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
202
203
Voltage regulators
Voltage regulators
Energy-eicient voltage regulators and trackers
Our linear voltage regulators and trackers help to reduce energy consumption, extending operating time and minimizing
operating costs across all kinds of systems. The wide supply voltage range, low quiescent current, rich protective feature
set and choice of packages make our devices the perfect fit across a broad application spectrum, apart from automation
systems as well for heath care, traic, power tools, lighting and many other multi-market systems. Our trackers are ideal
as additional supplies for o-board loads to increase system reliability.
Key features
› Input voltage up to 60V
› Output current up to 1.5 A
› Output voltage adjustable or fixed to specific values
› Quiescent current down to 5 µA
› Overload, overtemperature, short circuit and
reverse-polarity protection
› Low current consumption
› Extended temperature range -40°C ... +125°C
Key benefits
› Pin-to-pin compatibility with
industry-standard parts
› Very low dropout voltage
› Trackers for optimized heat distribution and
external protection
› Trackers for maximum system cost reduction
› Small robust packages
Infineon's microcontroller families and industrial voltage regulators
Microcontroller family Input voltage [V] Input current (max.) [mA] Voltage regulator
XMC1000 family 1.8 … 5.5 <100 IFX54211/IFX2931/IFX4949/IFX25001/IFX544xx/ IFX30081
XMC4000 family 3.3 <500/300 IFX1763/IFX544xx/IFX1117/IFX30081
XC8xx 3.3 … 5.0 200 IFX20001/IFX30081/IFX21401/IFX4949/IFX544xx
XE166/XC2000 1.5 and 3.3 or 5.0 100 IFX25401/IFX24401/IFX2931/IFX4949/IFX1763/IFX54441
TriCore™  1.5 … 3.3 >400 IFX27001/IFX8117/IFX91041/IFX80471/IFX25001/IFX1117
20 V
≤500 mA ≥500 mA<500 mA>500 mA
> 20 V ... 60 V
23
3
3
4
5
6
7
2
Maximum input voltage
Output current
IFX54441EJ V
Adj., 3.3 V, 5 V
EN, rev. pol, 2%
300 mA
IFX1117
Adj., 3.3 V
2% accuracy
800 mA
IFX1763
Adj., 3.3 V, 5 V
EN, rev. pol, 2.5%
500 mA
1
Output current
Low quiescent current
2Low noise behavior
3Small package
4Tracker! High accuracy
5Ultra low quiescent current
6Dual output
7
Very low dropout
IFX1963
Adj.
EN, rev. pol, 1.5%
1500 mA
IFX20001
3.3 V, 5 V
EN, rev. pol, 4%
30 mA
IFX20002
3.3 V, 5 V
EN, rev. pol, 4%
30 mA
IFX54211
3.3 V
EN
150 mA
IFX24401
5 V
EN, 2%
300 mA
IFX25001
3.3 V, 5 V
45 V, rev. pol, 4%
400 mA
IFX21401
0.5%
50 mA
Output current
IFX21004
60 V
30/150 mA
IFX27001
Adj.,
3.3 V, 5 V
40 V, 3%
1000 mA
IFX25401
Adj., 5 V
EN, rev. pol, 2%
400 mA
IFX4949
RST, 1%
100 mA
IFX2931
3.3 V, 5 V
100 mA
IFX30081
Adj., 3.3 V
50 mA, 5 uA
Industrial linear voltage regulator (selection tree)
www.infineon.com/industrial-voltage-regulators
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
203
DC-DC converters
www.infineon.com/industrial-dcdc-converters
DC-DC converters
Robust range of converters for the widest application spectrum
Our high-eiciency switching regulators and controllers help to reduce energy consumption. In addition to extending
the operating time of battery powered systems, they also significantly improve the thermal budget of the application.
Overall, this translates into minimal operating costs. For your design flexibility, they are available as adjustable voltage
variants as well as with dedicated fixed output voltage values.
Key features
› Input voltage up to 60V
› Output currents going from 500 mA up to 10 A
› Switching frequencies ranging from 100 kHz to 2.2 MHz
› Shutdown quiescent current down to below 2 µA
› Current limitation and overtemperature protection
› Enable feature
Key benefits
› High-eiciency regulation
› Only a few external components needed for stable
regulation
› Perfectly suited for regulation in pre-/post-regulation
power supply architectures
So-start ramp
generator
Charge pump
Bandgap
reference
Overtemperature
shutdown
Enable
Buck
converter
Oscillator
Feed forward
7
EN
IFX91041
V
S
3
BUO
BDS
FB
1
2
8
5
COMP
SYNC
GND
6
4
45 V
≤1 A
≥2 A
>1 A
> 45 V … 60 V
Maximum input voltage
Output current
IFX90121
5 V
2.2 MHz
500 mA
IFX91041
Adj., 5 V, 3.3 V
370 kHz
1.8 A
IFX80471
Adj., 5 V
60 V, 360 kHz
2.3 A
IFX81481
Adj.
Synchronous
controller
10 A
Output current
IFX91041 block diagram Industrial DC-DC buck regulators (selection tree)
DC-DC converters
Part number VQ (multiple)
Output current
type
Output current
[A]
Product features Package
IFX81481ELV Adjustable
Buck controller
10.0 10 A synchronous DC-DC adjustable step down controller;
f = 100 kHz-700 kHz, N
PG-SSOP-14
IFX90121EL V50 5.0V
Buck converter
0.5 Vin up to 45 V, 2.2 MHz step-down regulator with low quiescent current PG-SSOP-14
IFX80471SK V Adjustable
Buck controller
2.3 Vin up to 60V; VQ adjustable from 1.25 V up to 15 V; external MOSFET PG-DSO-14
IFX80471SK V50 5.0V
Buck controller
2.3 Vin up to 60V; external MOSFET PG-DSO-14
IFX91041EJV Adjustable
Buck converter
1.8 VQ adjustable from 0.6 V up to 16 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V33 3.3 V
Buck converter
1.8 VQ fixed to 3.3 V; tolerance 2% up to 1000 mA PG-DSO-8
IFX91041EJ V50 5.0V
Buck converter
1.8 VQ fixed to 5.0V; tolerance 2% up to 1000 mA PG-DSO-8
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
205
Digital I/O ICs
Isolated digital input ICs Key features
› Integrated galvanic isolation (500V)
› Eight channels (IEC type 1/2/3)
› Up to 500 kHz sampling speed
› Programmable input filters
› Channel-specific diagnostics
(wire-break, undervoltage)
Key benefits
› Robust and reliable
› Compact system solution
› High-speed applications
› Superior EMI robustness
› System status feedback
› Valuable maintenance support
Product overview ISO1I811T ISO1I813T
Input characteristics IEC type: I, II, III ✓ ✓
Input status LED ✓ ✓
Max. sampling frequency 125 kHz 500 kHz
Deglitching filter setting Hard wired Soware, individual per channel
Synchronous data acquisition – ✓
µC interface 3.3 V/5 V ✓ ✓
Serial and parallel ✓ ✓
Safety features 500V isolation voltage ✓ ✓
Wire break, channel-specific – ✓
Vbb undervoltage – ✓
Support for external Vbb supply – ✓
Package TSSOP-48 (8x12.5 mm) ✓ ✓
Infineon ordering code SP000876494 SP000876504
Digital input switch block diagram
The automation board utilizes Infineon’s industry-leading
XMC™ ARM® Cortex®-M4 microcontroller in combination with Infineon
supply, interface, communication and safety products.
› Complete automation kit gateway
› Combined MCU with EtherCAT® slave application
› Isolated interfaces w/ diagnose
› Ethernet connectivity with soware examples available
› 24 V supply
› CAN connectivity
› Full soware DAVE™ examples
XMC4800 automation board V2
Ordering code: SP001632038
Digital
filter
Digital
filter
Serialize
Logic
Deserialize
Micro-
controller
e.g.
XE166
Parallel
or serial
interface
VFI
IN7
8 sensors
IN0 2 kΩ
330 nF
12 kΩ
GNDFI
I0H ERR
CS
Sync
GND
DC
ENA
I0L
TS
SW1SW2
Vbb VCC
WB
I7H
I7L
GNDBB
ISO1I813T
2 kΩ
12 kΩ
www.infineon.com/isoface
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
204
205
Digital I/O ICs
ISOFACE™
Galvanic isolated high-side switches and input ICs
Our ISOFACE™ product family provides robust and intelligent galvanic isolation for industrial control applications such
as programmable logic controllers, sensor input modules, control panels and general control equipment. The output
switches are compact in design, enabling robust and reliable operation at low system cost. Ideal for high-speed
applications, input ICs are equally robust, reliable and compact – also oering superior EMI robustness and diagnostics.
Isolated output switches Key features
› Integrated galvanic isolation (500V)
› Eight channels (0.6 or 1.2 A, each)
› Inductive load switching
› Diagnostic feedback
(overtemperature, overload)
› Serial and parallel MCU interface
Key benefits
› Robust and reliable
› Compact system solution
› Lower system cost
› System status feedback
› Directly interfacing with all
MPUs and MCUs
Product overview ISO1H801G ISO1H811G ISO1H812G ISO1H815G ISO1H816G
Switch
Vbb operational range: 11 V to 35 V ✓✓✓✓✓
Max. continuous load current per channel 0.6 A 0.6 A 0.6 A 1.2 A 1.2 A
Load current increase by using outputs in parallel ✓✓✓✓✓
Inductive clamping energy per channel: 1 Joule ✓✓✓✓✓
Microcontroller
interface
Type Parallel Parallel Serial Parallel Serial
Nominal voltages 5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V
Safety features
Isolation voltage: VISO = 500V
UL508 and EN 61131-2 certified
✓✓✓✓✓
Active current limitation ✓✓✓✓✓
Thermal shutdown ✓✓✓✓✓
Common output disable pin ✓✓✓✓✓
Diagnostics
feedback
Overtemperature ✓✓✓✓
Vbb undervoltage ✓✓✓✓
Package DSO-36 (16x14 mm) ✓✓✓✓✓
Infineon ordering code SP000722122 SP000413798 SP000413800 SP000555576 SP000555578
Isolated output switch block diagram
Control
and
protection
unit
Control
unit
Microcontroller
i.e.
XMC1xxx
XMC4xxx
Logic
Transmission
Transmission
Parallel or
serial
interface
V
bb
V
CC
VCC
DIAG
GND
Vbb
VCC
OUT0
DIS
CS
WR
D0
D7
DIAG
GNDCC GNDBB
OUT1
OUT7
ISO1H81xG
www.infineon.com/isoface
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
205
Digital I/O ICs
Isolated digital input ICs Key features
› Integrated galvanic isolation (500V)
› Eight channels (IEC type 1/2/3)
› Up to 500 kHz sampling speed
› Programmable input filters
› Channel-specific diagnostics
(wire-break, undervoltage)
Key benefits
› Robust and reliable
› Compact system solution
› High-speed applications
› Superior EMI robustness
› System status feedback
› Valuable maintenance support
Product overview ISO1I811T ISO1I813T
Input characteristics IEC type: I, II, III ✓ ✓
Input status LED ✓ ✓
Max. sampling frequency 125 kHz 500 kHz
Deglitching filter setting Hard wired Soware, individual per channel
Synchronous data acquisition – ✓
µC interface 3.3 V/5 V ✓ ✓
Serial and parallel ✓ ✓
Safety features 500V isolation voltage ✓ ✓
Wire break, channel-specific – ✓
Vbb undervoltage – ✓
Support for external Vbb supply – ✓
Package TSSOP-48 (8x12.5 mm) ✓ ✓
Infineon ordering code SP000876494 SP000876504
Digital input switch block diagram
The automation board utilizes Infineon’s industry-leading
XMC™ ARM® Cortex®-M4 microcontroller in combination with Infineon
supply, interface, communication and safety products.
› Complete automation kit gateway
› Combined MCU with EtherCAT® slave application
› Isolated interfaces w/ diagnose
› Ethernet connectivity with soware examples available
› 24 V supply
› CAN connectivity
› Full soware DAVE™ examples
XMC4800 automation board V2
Ordering code: SP001632038
Digital
filter
Digital
filter
Serialize
Logic
Deserialize
Micro-
controller
e.g.
XE166
Parallel
or serial
interface
VFI
IN7
8 sensors
IN0 2 kΩ
330 nF
12 kΩ
GNDFI
I0H ERR
CS
Sync
GND
DC
ENA
I0L
TS
SW1SW2
Vbb VCC
WB
I7H
I7L
GNDBB
ISO1I813T
2 kΩ
12 kΩ
www.infineon.com/isoface
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
207
Industrial PROFET™ evaluation board plus samples: Additional evaluation boards:
› ITS4060S-SJ-N, ITS4100S-SJ-N, ITS4200S-SJ-D,
ITS4300S-SJ-D, ITS4200S-ME-N, ITS4200S-ME-O,
ITS4200S-ME-P, ITS41K0S-ME-N
order: INDPROFETEVALBOARDTOBO1
› ITS42008, order: DEMOBOARDITS42008TOBO1
› ITS42K5D-LD-F, order: DEMOBOARDITS42K5DTOBO1
› ITS 4040D-EP-D, order: DEMO BOARD ITS 4040DTOB01
› ITS 4075Q-EP-D, order: DEMO BOARD ITS 4075QTOB01
› ITS 4090Q-EP-O, order: DEMO BOARD ITS 4090QTOB01
› ITS 4130Q-EP-D, order: DEMO BOARD ITS 4130QTOB01www.infineon.com/industrial-profet
High-side switches
PLC – programmable logic controller digital output modules
System benefits
› Suitable for all types of complex loads including high
inductances (EAS) as PLC manufacturers cannot predict
how the end customer will use the digital outputs
› Outstanding robustness and reliability as required by
industrial mission profiles
› Thermally optimized products with low RDS(on) to deal
with the high ambient temperatures within I/O mod-
ules with limited or even no cooling
› Diagnosis and protection for safe system operation
› Small and compact design for higher integration
› Addressing the I/O modules quasi standard currents
2A & 0.5A, but also lower currents as within micro-PLCs
Protection
diagnosis
Isolation
Protection
diagnosis
Multichannel
switch
Switch
Switch
Load 1
Load 2
Microcontroller
or
bus ASIC
Industrial PROFET™
Protected high-side
switches
Load 3
Load 4
Field levelControl level
Product Number of
channels
RDS(on)
(typ)
[mΩ]
Nominal load
current
[A]
EAS
[mJ]
Recommended
operating voltage range
[V]
IL(SC) (typ)
[A]
Diagnosis Package
ITS4060S-SJ-N 1 50 3.10 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ISP772T 1 50 2.60 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ITS428L2 1 60 7.00 190 @ 7.00 A 4.75 … 41.00 22.0 Digital TO252-5
ITS4100S-SJ-N 1 70 2.40 870 @ 1.00 A 5.00 … 34.00 10.0 n/a PG-DSO-8
ISP762T 1 70 2.00 870 @ 1.00 A 5.00 … 34.00 10.0 n/a DSO-8
ITS4200S-ME-O 1 150 1.10 700 @ 0.50 A 11.00 … 45.00 1.4 n/a SOT-223-4
ITS4141N 1 150 1.10 700 @ 0.50 A 12.00 … 45.00 1.4 n/a SOT-223-4
ITS4141D 1 150 1.10 12,000 @ 0.50 A 12.00 … 45.00 1.4 n/a TO-252-5
ITS4200S-ME-P 1 150 2.20 160 @ 1.00 A 11.00 … 45.00 3.0 n/a SOT-223-4
ITS4142N 1 150 2.20 160 @ 1.00 A 12.00 … 45.00 3.0 n/a SOT-223-4
ITS4200S-ME-N 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a DSO-8
ISP452 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a SOT-223-4
ITS4200S-SJ-D 1 150 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752R 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752T 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 n/a DSO-8
ITS4300S-SJ-D 1 250 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital DSO-8
ISP742RI 1 350 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital, inverted DSO-8
ITS41K0S-ME-N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4140N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4040D-EP-D 2 40 2 x 2.00 185* 5.00 … 45.00 4.1 Digital TSDSO-14
ITS5215L 2 90 2 x 2.00 178 @ 3.50 A 5.50 … 40.00 15.0 Digital DSO-12
ITS42K5D-LD-F 2 2500 2 x 0.25 Freewheeling 4.50 … 45.00 0.6 Digital TSON-10
ITS4075Q-EP-D 4 75 4 x 2.00 60* 5.00 … 45.00 4.1 Digital TSDSO-14
ITS4090Q-EP-D 4 100 4 x 0.50 410* 5.00 … 45.00 1.5 Digital TSDSO-14
ITS724G 4 90 4 x 2.00 120 @ 3.30 A 5.50 … 40.00 15.0 Digital DSO-20
ITS4130Q-EP-D 4 130 4 x 0.50 380* 5.00 … 45.00 1.25 Digital TSDSO-14
ITS716G 4 140 4 x 1.00 76 @ 2.30 A 5.50 … 40.00 9.0 Digital DSO-20
ITS711L1 4 200 4 x 1.00 150 @ 1.90 A 5.00 … 35.00 7.5 Digital DSO-20
ITS42008-SB-D 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
ITS4880R 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
* Per one channel
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
206
207
High-side switches
Industrial PROFET™
Protected high-side switches
The well-established high-side switch Industrial PROFET™ products were designed for targeting a variety of industrial
applications which include all types of resistive, inductive and capacitive loads. Due to their outstanding energy
robustness, they are perfectly suitable for switching even higher inductive loads and driving relays. Their main
application areas include high-voltage applications (VBAT up to 60 V), high-speed PWM applications (up to 1 kHz) and
they are most notably capable of switching higher inductances smoothly. Industrial PROFET™ can be applied to drive
any kind of sensor units, indicators, displays, LEDs, relays, valves and magnetic actuators or replace electromechanical
relays, fuses and discrete circuits. Industrial PROFET™ are also the perfect match for applications with long wiring or
any other kind of inductive loads or applications with space constraints.
Key applications
› Industrial automation
› Programmable logic controller (PLC)
› Digital I/O modules
› Robotics
› Building and home automation
› Set Home
› Solar applications
› Wind energy systems
› Smart grid
› Medical
› E-bikes and LEVs (light electric vehicles)
› Motor control and drives
› Power supplies
www.infineon.com/industrial-profet
Control
Control
Process
Power bus
Power
supply
unit
Motor
control
Motor
control
Robot
control
Motor
control
Motor
control
Sensor
module
Sensor
module
Security
module
Security
module
Security
module
Sensor
module
PLC/
micro-
controller
Digital
output
switch
Digital
input
Digital
output
switch
System benefits
› Right fit for digital output switches, motor or robot
control, protected switching of decentralized loads like
sensors or auxiliary supply
› Suitable for all types of complex loads including high
inductances (high EAS)
› Outstanding robustness and reliability as required by
industrial mission profiles
Industrial automation system diagram
› Thermally optimized products with low RDS(on) to deal with
the high ambient temperatures and limited or even no
cooling
› Diagnosis and protection for safe system operation
› Small and compact design for higher integration and
applications with space constraints
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
207
Industrial PROFET™ evaluation board plus samples: Additional evaluation boards:
› ITS4060S-SJ-N, ITS4100S-SJ-N, ITS4200S-SJ-D,
ITS4300S-SJ-D, ITS4200S-ME-N, ITS4200S-ME-O,
ITS4200S-ME-P, ITS41K0S-ME-N
order: INDPROFETEVALBOARDTOBO1
› ITS42008, order: DEMOBOARDITS42008TOBO1
› ITS42K5D-LD-F, order: DEMOBOARDITS42K5DTOBO1
› ITS 4040D-EP-D, order: DEMO BOARD ITS 4040DTOB01
› ITS 4075Q-EP-D, order: DEMO BOARD ITS 4075QTOB01
› ITS 4090Q-EP-O, order: DEMO BOARD ITS 4090QTOB01
› ITS 4130Q-EP-D, order: DEMO BOARD ITS 4130QTOB01www.infineon.com/industrial-profet
High-side switches
PLC – programmable logic controller digital output modules
System benefits
› Suitable for all types of complex loads including high
inductances (EAS) as PLC manufacturers cannot predict
how the end customer will use the digital outputs
› Outstanding robustness and reliability as required by
industrial mission profiles
› Thermally optimized products with low RDS(on) to deal
with the high ambient temperatures within I/O mod-
ules with limited or even no cooling
› Diagnosis and protection for safe system operation
› Small and compact design for higher integration
› Addressing the I/O modules quasi standard currents
2A & 0.5A, but also lower currents as within micro-PLCs
Protection
diagnosis
Isolation
Protection
diagnosis
Multichannel
switch
Switch
Switch
Load 1
Load 2
Microcontroller
or
bus ASIC
Industrial PROFET™
Protected high-side
switches
Load 3
Load 4
Field levelControl level
Product Number of
channels
RDS(on)
(typ)
[mΩ]
Nominal load
current
[A]
EAS
[mJ]
Recommended
operating voltage range
[V]
IL(SC) (typ)
[A]
Diagnosis Package
ITS4060S-SJ-N 1 50 3.10 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ISP772T 1 50 2.60 900 @ 1.50 A 5.00 … 34.00 17.0 n/a DSO-8
ITS428L2 1 60 7.00 190 @ 7.00 A 4.75 … 41.00 22.0 Digital TO252-5
ITS4100S-SJ-N 1 70 2.40 870 @ 1.00 A 5.00 … 34.00 10.0 n/a PG-DSO-8
ISP762T 1 70 2.00 870 @ 1.00 A 5.00 … 34.00 10.0 n/a DSO-8
ITS4200S-ME-O 1 150 1.10 700 @ 0.50 A 11.00 … 45.00 1.4 n/a SOT-223-4
ITS4141N 1 150 1.10 700 @ 0.50 A 12.00 … 45.00 1.4 n/a SOT-223-4
ITS4141D 1 150 1.10 12,000 @ 0.50 A 12.00 … 45.00 1.4 n/a TO-252-5
ITS4200S-ME-P 1 150 2.20 160 @ 1.00 A 11.00 … 45.00 3.0 n/a SOT-223-4
ITS4142N 1 150 2.20 160 @ 1.00 A 12.00 … 45.00 3.0 n/a SOT-223-4
ITS4200S-ME-N 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a DSO-8
ISP452 1 160 1.20 500 @ 0.50 A 5.00 … 34.00 1.5 n/a SOT-223-4
ITS4200S-SJ-D 1 150 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752R 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 Digital DSO-8
ISP752T 1 200 1.70 125 @ 1.00 A 6.00 … 52.00 6.5 n/a DSO-8
ITS4300S-SJ-D 1 250 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital DSO-8
ISP742RI 1 350 0.80 800 @ 0.30 A 5.00 … 34.00 1.2 Digital, inverted DSO-8
ITS41K0S-ME-N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4140N 1 1000 0.55 1000 @ 0.15 A 4.90 … 60.00 0.9 n/a SOT-223-4
ITS4040D-EP-D 2 40 2 x 2.00 185* 5.00 … 45.00 4.1 Digital TSDSO-14
ITS5215L 2 90 2 x 2.00 178 @ 3.50 A 5.50 … 40.00 15.0 Digital DSO-12
ITS42K5D-LD-F 2 2500 2 x 0.25 Freewheeling 4.50 … 45.00 0.6 Digital TSON-10
ITS4075Q-EP-D 4 75 4 x 2.00 60* 5.00 … 45.00 4.1 Digital TSDSO-14
ITS4090Q-EP-D 4 100 4 x 0.50 410* 5.00 … 45.00 1.5 Digital TSDSO-14
ITS724G 4 90 4 x 2.00 120 @ 3.30 A 5.50 … 40.00 15.0 Digital DSO-20
ITS4130Q-EP-D 4 130 4 x 0.50 380* 5.00 … 45.00 1.25 Digital TSDSO-14
ITS716G 4 140 4 x 1.00 76 @ 2.30 A 5.50 … 40.00 9.0 Digital DSO-20
ITS711L1 4 200 4 x 1.00 150 @ 1.90 A 5.00 … 35.00 7.5 Digital DSO-20
ITS42008-SB-D 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
ITS4880R 8 200 8 x 0.60
10,000 @ 625 mA
11.00 … 45.00 3.0 Digital DSO-36
* Per one channel
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
209
Low-side switches
Product type Product
family
Channels RDS(on) @ 25°C
[mW]
Nominal load
current
[A]
EAS
[mJ]
Operating
voltage range
[V]
IL(SD)
(typ)
[A]
IL(lim)
(typ)
[A]
IL(lim)_TRIGGER
(typ)
[A]
Diagnosis Package
BTS3011TE NEW! HITFET™+ 1 10.7 10 300 @ 5 A up to 28 - 35 70
Status pin
TO-252-5 (DPAK 5-leg)
BTS3035EJ HITFET™+ 1 28 5.00 105 @ 5 A up to 31 – 20.00 –
Status pin
TDSO-8
BTS3035TF HITFET™+ 1 30 5.00 106 @ 5 A up to 31 – 20.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3035EJ* NEW! HITFET™+ 1 28 5.00 95 @ 5 A up to 32 – 14.00 41.00
Status pin
TDSO-8
BTF3050TE HITFET™+ 1 40 3.00 120 @ 3 A up to 28 – 8.00 30.00
Through SRP pin
TO-252-5 (DPAK 5-leg)
BTS3050EJ HITFET™+ 1 40 4.00 62 @ 3 A up to 31 – 15.00 –
Status pin
TDSO-8
BTS3050TF HITFET™+ 1 44 4.00 64 @ 4 A up to 31 – 15.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3050EJ* NEW! HITFET™+ 1 40 4.00 62 @ 4 A up to 32 – 10.00 29.00
Status pin
TDSO-8
BTS3060TF HITFET™+ 1 50 3.00 55 @ 3 A up to 35 – 10.50 –
–
TO-252-3 (DPAK 3-leg)
BTS3080EJ HITFET™+ 1 64 3.00 35 @ 3 A up to 31 – 10.00 –
Status pin
TDSO-8
BTS3080TF HITFET™+ 1 69 3.00 38 @ 3 A up to 31 – 10.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3080EJ* NEW! HITFET™+ 1 64 3.00 33 @ 3 A up to 32 – 7.00 18.00
Status pin
TDSO-8
BTS3125EJ HITFET™+ 1 100 2.00 30 @ 2 A up to 31 – 7.00 –
Status pin
TDSO-8
BTS3125TF HITFET™+ 1 108 2.00 24 @ 2 A up to 31 – 7.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3125EJ* NEW! HITFET™+ 1 100 2.00 23 @ 2 A up to 32 – 5.00 12.00
Status pin
TDSO-8
BTS3018TC HITFET™ 1 14 6.00 1900 up to 36 – 30.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS141TC HITFET™ 1 25 5.10 4000 up to 36 – 25.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3028SDL HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3028SDR HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS133TC HITFET™ 1 40 3.80 2000 up to 36 – 21.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3046SDL HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3046SDR HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS117TC HITFET™ 1 80 3.50 1000 up to 36 – 7.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3104SDL HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3104SDR HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
AUIPS2041L HITFET™ 1 100 1.40 - up to 35 5.00 – –
–
SOT-223
AUIPS2051L HITFET™ 1 250 0.90 - up to 35 1.80 – –
–
SOT-223
AUIPS2052G HITFET™ 2 250 0.90 - up to 35 1.80 – –
–
SO-8 (DSO-8)
BTS3408G HITFET™ 2 480 0.55 800 up to 36 – 1.00 –
Through input pin
DSO-8
BSP75N HITFET™ 1 490 0.70 550 up to 36 – 1.00 –
Through input pin
SOT-223
Low-side switch shield with BTF3050TE
The low-side switch shield from Infineon consists out of three BTF3050TE low-side switches of the HITFET™+ family
providing three independent power channels that can be controlled via the input pins. The shield is compatible
with microcontroller boards using the Arduino form factor, for example the corresponding ARM® powered XMC™
microcontroller kits from Infineon and supports fast and easy prototyping of applications with BTF3050TE.
Key features
› PWM up to 14 kHz (10 percent duty cycle)
› Driver circuit with logic level inputs
› Fault feedback
› Protection e.g. against overtemperature
and overcurrent
› Able to switch all kinds of resistive, inductive and
capacitive loads
Operating conditions
› Nominal voltage range 8 V – 18 V
› Nominal current 3 A (typ.) DC
www.infineon.com/hitfet
www.infineon.com/shields-for-arduino
* Available in Q2 2018
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
208
209
Low-side switches
HITFET™
Protected low-side switches
HITFET™ stands for highly-integrated temperature-protected MOSFET. These well-established low-side switches oer
a compelling feature set with protection against overtemperature, short circuit and overload conditions as well as
ESD robustness. The HITFET™+ family is the new generation based on a new technology, enabling a significant shrink
compared to the existing HITFET™ portfolio (up to 50 percent shrink). This new generation consists of standard and
fully-featured protected low-side switches (35 to 125 mΩ) in the TO-252-3 DPAK/TO-252-5 DPAK and TDSO-8 packages.
HITFET™ and HITFET™+ devices address a wide range of applications including resistive, inductive and resistive loads.
Key features
› Low-side switches with integrated protection features
› Scalable in RDS(on) ranges from 490 mΩ down to 11 mΩ
› Adjustable slew rate control (BTFxxx)
› Thermal shutdown with auto restart or latch behavior
› Status feedback via
– Increased input current (HITFET™ 2nd gen.)
– Digital read out via SRP (BTF3050TE)
– Via status pin (BTF3xxxEJ)
Key applications
› Industrial automation*
› Programmable logic controller (PLC)**
› Digital I/O modules
› Building and home management
› All kind of solenoid or valve driving
› Power modules
› Solar power inverters
Application diagramm example for HITFET™
Key benefits
› High design flexibility with scalable RDS(on) and package
› Driving applications with high switching speed requirements up to 25 kHz (e.g. valve, solenoid)
› Easy to design-in
› Choice of packages to match individual application needs
www.infineon.com/hitfet
*See block diagram on page 204
** See block diagram on page 205
OUT
GND
STATUS
SRP
IN
ENABLE
VDD
Load
OUTPUT (PWM)
INPUT (feedback)/
OUTPUT (reset)
OUTPUT
OUT
Microcontroller
BTF3xxxEJ
GND
VDD
VBatt
IN
RSTATUS
RSRP
CVDD2)
CSRP1)
Voltage
regulator
5 V
1)
CSRP-GND < 100 pF – maximum permittet parasitic capacitance at the SRP-pin
2) Filter capacitor on supply, recommended 100 nF
V
ehicle
CAN bus
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
209
Low-side switches
Product type Product
family
Channels RDS(on) @ 25°C
[mW]
Nominal load
current
[A]
EAS
[mJ]
Operating
voltage range
[V]
IL(SD)
(typ)
[A]
IL(lim)
(typ)
[A]
IL(lim)_TRIGGER
(typ)
[A]
Diagnosis Package
BTS3011TE NEW! HITFET™+ 1 10.7 10 300 @ 5 A up to 28 - 35 70
Status pin
TO-252-5 (DPAK 5-leg)
BTS3035EJ HITFET™+ 1 28 5.00 105 @ 5 A up to 31 – 20.00 –
Status pin
TDSO-8
BTS3035TF HITFET™+ 1 30 5.00 106 @ 5 A up to 31 – 20.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3035EJ* NEW! HITFET™+ 1 28 5.00 95 @ 5 A up to 32 – 14.00 41.00
Status pin
TDSO-8
BTF3050TE HITFET™+ 1 40 3.00 120 @ 3 A up to 28 – 8.00 30.00
Through SRP pin
TO-252-5 (DPAK 5-leg)
BTS3050EJ HITFET™+ 1 40 4.00 62 @ 3 A up to 31 – 15.00 –
Status pin
TDSO-8
BTS3050TF HITFET™+ 1 44 4.00 64 @ 4 A up to 31 – 15.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3050EJ* NEW! HITFET™+ 1 40 4.00 62 @ 4 A up to 32 – 10.00 29.00
Status pin
TDSO-8
BTS3060TF HITFET™+ 1 50 3.00 55 @ 3 A up to 35 – 10.50 –
–
TO-252-3 (DPAK 3-leg)
BTS3080EJ HITFET™+ 1 64 3.00 35 @ 3 A up to 31 – 10.00 –
Status pin
TDSO-8
BTS3080TF HITFET™+ 1 69 3.00 38 @ 3 A up to 31 – 10.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3080EJ* NEW! HITFET™+ 1 64 3.00 33 @ 3 A up to 32 – 7.00 18.00
Status pin
TDSO-8
BTS3125EJ HITFET™+ 1 100 2.00 30 @ 2 A up to 31 – 7.00 –
Status pin
TDSO-8
BTS3125TF HITFET™+ 1 108 2.00 24 @ 2 A up to 31 – 7.00 –
–
TO-252-3 (DPAK 3-leg)
BTF3125EJ* NEW! HITFET™+ 1 100 2.00 23 @ 2 A up to 32 – 5.00 12.00
Status pin
TDSO-8
BTS3018TC HITFET™ 1 14 6.00 1900 up to 36 – 30.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS141TC HITFET™ 1 25 5.10 4000 up to 36 – 25.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3028SDL HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3028SDR HITFET™ 1 28 5.00 350 up to 36 – 18.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS133TC HITFET™ 1 40 3.80 2000 up to 36 – 21.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3046SDL HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3046SDR HITFET™ 1 46 3.60 140 up to 36 – 10.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS117TC HITFET™ 1 80 3.50 1000 up to 36 – 7.00 –
Through input pin TO-263-3-2 (TO-220-3 (SMD))
BTS3104SDL HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
BTS3104SDR HITFET™ 1 104 2.00 50 up to 36 – 6.00 –
Through input pin TO-252-3 (DPAK 3-leg)
AUIPS2041L HITFET™ 1 100 1.40 - up to 35 5.00 – –
–
SOT-223
AUIPS2051L HITFET™ 1 250 0.90 - up to 35 1.80 – –
–
SOT-223
AUIPS2052G HITFET™ 2 250 0.90 - up to 35 1.80 – –
–
SO-8 (DSO-8)
BTS3408G HITFET™ 2 480 0.55 800 up to 36 – 1.00 –
Through input pin
DSO-8
BSP75N HITFET™ 1 490 0.70 550 up to 36 – 1.00 –
Through input pin
SOT-223
Low-side switch shield with BTF3050TE
The low-side switch shield from Infineon consists out of three BTF3050TE low-side switches of the HITFET™+ family
providing three independent power channels that can be controlled via the input pins. The shield is compatible
with microcontroller boards using the Arduino form factor, for example the corresponding ARM® powered XMC™
microcontroller kits from Infineon and supports fast and easy prototyping of applications with BTF3050TE.
Key features
› PWM up to 14 kHz (10 percent duty cycle)
› Driver circuit with logic level inputs
› Fault feedback
› Protection e.g. against overtemperature
and overcurrent
› Able to switch all kinds of resistive, inductive and
capacitive loads
Operating conditions
› Nominal voltage range 8 V – 18 V
› Nominal current 3 A (typ.) DC
www.infineon.com/hitfet
www.infineon.com/shields-for-arduino
* Available in Q2 2018
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
211
Integrated multi-half-bridge driver ICs
The TLE94xyz are protected half-bridge drivers designed for 12 V motion control applications such as small DC motors
for heating, ventilation and air conditioning (HVAC), as well as automotive mirror adjustment and fold. The family
oers three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge driver. All devices can drive DC motor
loads up to 0.9 A per output in cascaded or parallel operation. They provide diagnosis of short circuit, open load,
power supply failure and overtemperature for each half-bridge to ensure safe operation in HVAC or other systems. The
TLE94xyz oers enhanced EMC performance, which in combination with the low quiescent current and a small package
makes the product attractive for a wide range of 12 V automotive and industrial applications.
Key features and benefits
› Three-, four-, six-, eight-, ten-,
and twelve-fold half-bridges with
integrated output stages and PWM
› 16-bit SPI or direct inputs for control
and diagnosis
› Voltage supply range: 5.5– 20 V
› Adjustable open load threshold for
two outputs
› Variable driving schemes for up to
11 motors
› OUT 1 and 2 optimized for driving
› HS loads (e.g. LED)
Key applications
› 12 V automotive and industrial
applications
› Flap motors in HVAC systems
› Mirror adjustment and fold
› Small DC motors (≤ 0.9 A/output)
› Bi-stable relays
Product
name
Configuration IL(NOM)
[A]
IL(lim)
[A]
Iq
[μA]
VS(OP)
[V]
Protection Diagnostic
interface
Highlights VCE(sat)/RDS(on) Package
TLE94003EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5…20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94103EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94004EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5…20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94104EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94106EL 6 x half-bridge 6 x 0.30 6 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back-
wards compatible to TLE84106EL
850 mΩ/switch SSOP-24
TLE94108EL 8 x half-bridge 8 x 0.30 8 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept 850 mΩ/switch SSOP-24
TLE94110EL 10 x half-bridge 10 x 0.30 10 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back-
wards compatible to TLE84106EL
850 mΩ/switch SSOP-24
TLE94112EL 12 x half-bridge 12 x 0.30 12 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + 12
outputs in one package
850 mΩ/switch SSOP-24
www.infineon.com/dc-motor-bridges
Low voltage drives
Overload
detection
Overtemp.
detection
Open-load
detection
PWM
generator
Charge pump
Undervoltage and
overvoltage monitor
Overload
detection
Overtemp.
detection
Open-load
detection
Temperature
sensor
Logic control and
latch SPI interface
Error
detection
V
DD
V
S1
V
S2
CSN
GND GND GND GND
EN
12-fold
half-bridge driver
SPI interface
SCLK
SDI
SDO
Power driver
OUT3
OUT2
OUT1
12x
driver
stage
High-side
driver
Low-side
driver
OUT4
OUT5
OUT6
OUT9
OUT8
OUT7
OUT10
OUT11
OUT12
Bias and
monitor
Block diagram TLE94112EL
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
210
211
Low voltage drives
Half- and H-bridges
Motor control design made easy
Half-bridges
The NovalithIC™ provides a complete, low-ohmic protected half-bridge in a single package (typ. path resistance at
25°C down to 10 mΩ). It can also be combined with an additional NovalithIC™ to create a H-bridge or three-phase
bridge. The NovalithIC™ family has the capability to switch high-frequency PWM while providing overcurrent, overvolt-
age and overtemperature protection. The NovalithIC™ family oers cost-optimized, scalable solutions for protected
high-current PWM motor drives with very restrictive board space. Due to the P-channel high-side switch the need for a
charge pump is eliminated thus minimizing EMI. The latest addition to the NovalithIC™ family is the IFX007T, which is
optimized for industrial applications.
Basic features
› Low quiescent current
› Capable for high PWM frequency
› Logic level input
› Adjustable slew rate
› Cross-current protection
Protection features
› Overtemperature shutdown
› Overvoltage (lockout or
smart clamp)
› Undervoltage
› Overcurrent
Diagnostic features
› Overtemperature
› Overvoltage
› Overcurrent
› Current sense and status
Product
number
Operating
range
[V]
RDS(on) path
(typ.)
[mΩ]
ID(lim) (typ.)
[A]
Iq (typ.)
[µA]
Switch time
(typ.)
[µs]
Diagnosis Protection Package Qualification
IFX007T 5.5 ... 40.0 10.0 70 7 0.25 OT, OC, CS UV, OT, OC PG-TO-263-7 JESD471
CS = Current sense OC = Overcurrent OT = Overtemperature
www.infineon.com/novalithic
Application example for high-current PWM motor drives
IFX007T
VSVS
GND
OUT
GND
OUT
SR
IS
IN
INH
SR
IS
IN
INH
I/OI/OI/OI/OI/O
Reset
I/O I
VDD
VSS
WO
RO
Q
D
GND
Microcontroller Voltage
regulator
Reverse polarity
protection
IFX007T
M
VS
High current H-bridge
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
211
Integrated multi-half-bridge driver ICs
The TLE94xyz are protected half-bridge drivers designed for 12 V motion control applications such as small DC motors
for heating, ventilation and air conditioning (HVAC), as well as automotive mirror adjustment and fold. The family
oers three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge driver. All devices can drive DC motor
loads up to 0.9 A per output in cascaded or parallel operation. They provide diagnosis of short circuit, open load,
power supply failure and overtemperature for each half-bridge to ensure safe operation in HVAC or other systems. The
TLE94xyz oers enhanced EMC performance, which in combination with the low quiescent current and a small package
makes the product attractive for a wide range of 12 V automotive and industrial applications.
Key features and benefits
› Three-, four-, six-, eight-, ten-,
and twelve-fold half-bridges with
integrated output stages and PWM
› 16-bit SPI or direct inputs for control
and diagnosis
› Voltage supply range: 5.5– 20 V
› Adjustable open load threshold for
two outputs
› Variable driving schemes for up to
11 motors
› OUT 1 and 2 optimized for driving
› HS loads (e.g. LED)
Key applications
› 12 V automotive and industrial
applications
› Flap motors in HVAC systems
› Mirror adjustment and fold
› Small DC motors (≤ 0.9 A/output)
› Bi-stable relays
Product
name
Configuration IL(NOM)
[A]
IL(lim)
[A]
Iq
[μA]
VS(OP)
[V]
Protection Diagnostic
interface
Highlights VCE(sat)/RDS(on) Package
TLE94003EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5…20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94103EP
3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94004EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5…20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94104EP
4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept
+ small package
850 mΩ/switch TSDSO-14-EP
TLE94106EL 6 x half-bridge 6 x 0.30 6 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back-
wards compatible to TLE84106EL
850 mΩ/switch SSOP-24
TLE94108EL 8 x half-bridge 8 x 0.30 8 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept 850 mΩ/switch SSOP-24
TLE94110EL 10 x half-bridge 10 x 0.30 10 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + back-
wards compatible to TLE84106EL
850 mΩ/switch SSOP-24
TLE94112EL 12 x half-bridge 12 x 0.30 12 x 0.90 0.6 5.5…20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + 12
outputs in one package
850 mΩ/switch SSOP-24
www.infineon.com/dc-motor-bridges
Low voltage drives
Overload
detection
Overtemp.
detection
Open-load
detection
PWM
generator
Charge pump
Undervoltage and
overvoltage monitor
Overload
detection
Overtemp.
detection
Open-load
detection
Temperature
sensor
Logic control and
latch SPI interface
Error
detection
V
DD
V
S1
V
S2
CSN
GND GND GND GND
EN
12-fold
half-bridge driver
SPI interface
SCLK
SDI
SDO
Power driver
OUT3
OUT2
OUT1
12x
driver
stage
High-side
driver
Low-side
driver
OUT4
OUT5
OUT6
OUT9
OUT8
OUT7
OUT10
OUT11
OUT12
Bias and
monitor
Block diagram TLE94112EL
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
213
Low voltage drives
Application example H-bridge
with error flag
SO
GND
Microcontroller
IFX9201SG
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
3.3 or 5 V
Digital supply
VBat
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
M
+
–
+
–
+
–
+
–
PWM_2
XMC1300
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS) IFX9202ED
PWM_1
PWM_2 OUT2_2
OUT2_1
OUT1_2
OUT1_1
GND GND
Application example H-bridge
with SPI interface
SO
GND
Microcontroller
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
VBat
M
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
3.3 or 5 V
Digital supply IFX9201SG
+
–
+
–
+
–
+
–
PWM_2
IFX9201
XMC1300
IFX9201
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS)
www.infineon.com/dc-motor-bridges
Integrated H-bridges
IFX9201SG and IFX9202ED* are general purpose 6 A H-bridges designed for the control of small DC motors and
inductive loads. The outputs can be pulse width modulated at frequencies up to 20 kHz, which enables operation
above the human sonic range by means of PWM/DIR control. While the signal at the DIR input defines the direction
of the DC motor, the PWM signal controls the duty cycle. For load currents above the current limitation threshold
(8 A typically), the H-bridges switch into chopper current limitation mode.
Key features and benefits
› Up to nominal 36 V supply voltage
› Short circuit, overtemperature protection and
undervoltage shutdown
› Detailed SPI diagnosis or simple error flag
› Simple design with few external components
› Small and robust DSO-12-17 (IFX9201SG) and
DSO-36-72 (IFX9202ED) packages
Product number Current limit (min.)
[A]
Quiescent current (typ.)
[µA]
Operating range
[V]
RDS(on) (typ./switch)
[mΩ]
Package RthJC (max.)
[K/W]
IFX9202SG 2 x 6.0 A 19.0 5…36 2 x 100 DSO-36 2 x 0.5
Applications examples
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
212
213
Low voltage drives
www.infineon.com/shields-for-arduino
www.infineon.com/makers
DC motor control shield with IFX007T for Arduino
DC motor shield with TLE94112EL for Arduino
The DC motor control shield is capable of driving two uni-directional DC motors (half-bridge configuration) or one
bidirectional DC motor (H-bridge configuration). The implemented half-bridge NovalithIC™ IFX007T can be controlled
by a PWM via the IN pin. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic
level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against
overtemperature, undervoltage, overcurrent and short circuit.
The DC motor shield is a small evaluation board equipped withTLE94112EL for use with Arduino. The TLE94112EL is
capable to drive up to 6 small DC motors in parallel mode or up to 11 DC motors in cascaded mode. All outputs can
drive up to 0.9 A. The outputs can be used stand-alone or combined to increase driving capability up to 3.6 A.
Infineon's shields for Arduino are compatible with
microcontroller boards using the Arduino-compatible
form factor, e.g. Infineon's XMC™ microcontroller kits.
Features
› Capable of high frequency PWM, e.g. 30 kHz
› Adjustable slew rates for optimized EMI by changing
external resistor
› Driver circuit with logic level inputs
› Diagnosis with current sense
Target applications
› Brushed DC motor control up to 250 W continuous load
› 24 V nominal input voltage (max. 6 V–40 V)
› Average motor current 30 A restricted due to PCB
(IFX007T current limitation @ 55 A min.)
Features
› Driver with 12 half-bridge outputs to drive DC motors,
resistive or inductive loads
› Driver is protected against overtemperature,
overcurrent, overvoltage, undervoltage and enables
diagnosis of overcurrent, overvoltage, undervoltage
› SPI interface with zero clock diagnosis
› Enhanced EMC performance
› Integrated PWM generator with three dierent
frequencies (80 Hz, 100 Hz, 200 Hz)
Target applications
› Multi-motor applications
› DC motors and voltage controlled bipolar
stepper motors
› Toys
› HVAC systems
DC motor control with half-bridge IFX007T
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
213
Low voltage drives
Application example H-bridge
with error flag
SO
GND
Microcontroller
IFX9201SG
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
3.3 or 5 V
Digital supply
VBat
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
M
+
–
+
–
+
–
+
–
PWM_2
XMC1300
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS) IFX9202ED
PWM_1
PWM_2 OUT2_2
OUT2_1
OUT1_2
OUT1_1
GND GND
Application example H-bridge
with SPI interface
SO
GND
Microcontroller
SI
SCK
CSN
DIR
PWM
DIS
VSO
VS
OUT1
OUT2
VBat
M
< 33 nF
100 nF100 µFVS < 40 V
< 33 nF
3.3 or 5 V
Digital supply IFX9201SG
+
–
+
–
+
–
+
–
PWM_2
IFX9201
XMC1300
IFX9201
PWM_1
Step
2-phase
stepper motor
Direction (DIR)
Disable (DIS)
www.infineon.com/dc-motor-bridges
Integrated H-bridges
IFX9201SG and IFX9202ED* are general purpose 6 A H-bridges designed for the control of small DC motors and
inductive loads. The outputs can be pulse width modulated at frequencies up to 20 kHz, which enables operation
above the human sonic range by means of PWM/DIR control. While the signal at the DIR input defines the direction
of the DC motor, the PWM signal controls the duty cycle. For load currents above the current limitation threshold
(8 A typically), the H-bridges switch into chopper current limitation mode.
Key features and benefits
› Up to nominal 36 V supply voltage
› Short circuit, overtemperature protection and
undervoltage shutdown
› Detailed SPI diagnosis or simple error flag
› Simple design with few external components
› Small and robust DSO-12-17 (IFX9201SG) and
DSO-36-72 (IFX9202ED) packages
Product number Current limit (min.)
[A]
Quiescent current (typ.)
[µA]
Operating range
[V]
RDS(on) (typ./switch)
[mΩ]
Package RthJC (max.)
[K/W]
IFX9202SG 2 x 6.0 A 19.0 5…36 2 x 100 DSO-36 2 x 0.5
Applications examples
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
215
Low voltage drives
www.infineon.com/dc-motor-bridges
Stepper drivers
Cost-eicient, durable and reliable
The TLE4726G, TCA3727G and TLE8444SL are designed to drive bipolar stepper motors, DC motors and other inductive
loads that operate on a constant current. The TLE4726G and TCA3727G have integrated control logic and power output
stages for two bipolar windings.
Key features
› Full to half-step operation
› Protected bipolar power stages
› Implemented current control
› Error flag for diagnosis
› Overtemperature protection
Applications
› ATM
› Franking machines
› Vending machine
› Idle speed control
› Printer
› Toys
Product
number
IL(NOM) IL(lim) Iq
[µA]
VS(op) Step
operations
Protection Diagnostic
interface
Highlights Package
TCA3727G 2x0.75 2x1.5 200 5–50 Full to mini-step OT – High operating voltage, low
quiescent current with inhibit
PG-DSO-24
TLE4726G 2x0.75 2x1.5 200 5–50 Full to mini-step OT – High operating voltage, low
quiescent current with inhibit
PG-DSO-24
TLE8444SL 4x0.50 4x0.90 1 1–18 Full to half-step SC, OT, OV, UV, OL Status flag Open-load detection in
on-state
SSOP-24-7
CS = Current sense
OC = Overcurrent
OT = Overtemperature
SC = Short circuit
UV = Undervoltage
OL = Open-load
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
214
215
Low voltage drives
H-bridge Kit 2Go with IFX9201SG
Stepper motor control shield with IFX9201SG and XMC1300 for Arduino
Build your own DC motor control with the H-bridge Kit 2GO, a ready-to-use evaluation kit. It is fully populated with all
electronic components equipped with the H-bridge IFX9201 combined with XMC1100 microcontroller based on ARM®
Cortex®-M0 CPU. It is designed for the control of DC motors or other inductive loads up to 6 A or up to 36 V of supply.
Target applications
› DC motor control for industrial applications
› Home and building automation
› Power tools battery management
› Industrial robotic applications
› Electric toys applications
The stepper motor control shield from Infineon is one of the first high current stepper motor control boards being
compatible to Arduino as well as to Infineon’s XMC1100 boot kit. The stepper motor control shield is
capable to drive the two coils in a stepper motors featuring dual-half bridge configuration. The implemented
integrated IFX9201 half-bridges can be controlled by a STEP-signal via the STEP pin. Interfacing to a microcontroller is
made easy by the integrated XMC1300 microcontroller that holds the peripherals to allow high-speed current control.
Microstepping of the stepper motor can be achieved using the internal comparators, while operational amplifiers are
installed to adapt the motor current sense signal to the microcontroller’s input levels.
Features
› Compatible with microcontroller boards using the
Arduino form factor, e.g. Infineon's XMC™
microcontroller kits
› Capable of high frequency PWM, e.g. 30 kHz
› Adjustable slew rates for optimized EMI by changing
external resistor
› Driver circuit with logic level inputs
› Diagnosis with current sense
Target applications
› Stepper motors up to 5 A phase current
› 24 V nominal input voltage for the power stage
› Average motor current 3 A without additional cooling
eort, 5 A possible with proper cooling
Benefits
› Fast and inexpensive prototyping of stepper
motor control
› Simple testing of microstepping algorithms
› Diagnose pin to allow hardware feedback during
development
› Overtemperature shutdown with latch behavior and
undervoltage shutdown of the power section
www.infineon.com/h-bridge-kit-2go
www.infineon.com/IFX9201SG-stepper-motor-shield
www.infineon.com/makers
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
215
Low voltage drives
www.infineon.com/dc-motor-bridges
Stepper drivers
Cost-eicient, durable and reliable
The TLE4726G, TCA3727G and TLE8444SL are designed to drive bipolar stepper motors, DC motors and other inductive
loads that operate on a constant current. The TLE4726G and TCA3727G have integrated control logic and power output
stages for two bipolar windings.
Key features
› Full to half-step operation
› Protected bipolar power stages
› Implemented current control
› Error flag for diagnosis
› Overtemperature protection
Applications
› ATM
› Franking machines
› Vending machine
› Idle speed control
› Printer
› Toys
Product
number
IL(NOM) IL(lim) Iq
[µA]
VS(op) Step
operations
Protection Diagnostic
interface
Highlights Package
TCA3727G 2x0.75 2x1.5 200 5–50 Full to mini-step OT – High operating voltage, low
quiescent current with inhibit
PG-DSO-24
TLE4726G 2x0.75 2x1.5 200 5–50 Full to mini-step OT – High operating voltage, low
quiescent current with inhibit
PG-DSO-24
TLE8444SL 4x0.50 4x0.90 1 1–18 Full to half-step SC, OT, OV, UV, OL Status flag Open-load detection in
on-state
SSOP-24-7
CS = Current sense
OC = Overcurrent
OT = Overtemperature
SC = Short circuit
UV = Undervoltage
OL = Open-load
Package overview
Key applications
› Small home appliances
› Hair driers
› Air purifiers
› Fans
› Motor drives
› Battery management
› Water pumps
› CPAP
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
217
QFN 12x12
12 x 12 x 0.9 mm
QFN 8x9
8 x 9 x 0.9 mm
QFN 7x8
7 x 8 x 0.9 mm
www.infineon.com/ipm
IPM
CIPOS™ Nano is a family of highly integrated, ultracompact IPMs for high eiciency appliance and light industrial
applications including rectifiers, converters, inverters in power management circuits and motor drives for hair dryers,
air purifiers, ceiling fans, circulation pumps and ventilators. By utilizing an innovative packaging solution, these IPMs
delivers a new benchmark in device size, oering up to a 60 percent smaller footprint than existing three-phase motor
control power IPMs.
The family is comprised of a series of fully integrated three-phase or half-bridge surface-mount motor control circuit
solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module, providing cost
savings through a smaller package design and even eliminating the need for an external heat sink.
CIPOS™ Nano
Three-phase or half-bridge driver with MOSFETs
Key features
› Motor drive-optimized fast recovery FETs
› Heat sink-less operation
› Smallest modules on the market
› Wide range of footprint compatible parts
› Integrated bootstrap functionality
› Untervoltage lockout for all channels
Key benefits
› Cost savings from smaller footprint
and reduced PCB space
› Easy implementation of two or three-phase
motor drives with half-bridge IPMs
› IPMs distribute heat dissipation
and enable elimination of heat sink
› Same PCB footprint to address multiple
application markets (100-230 VAC)
Performance IPM
CIPOS™ IPM family
Control integrated power system (CIPOS™) intelligent power modules (IPM)
Key benefits
› Shorter time-to-market
› Increased reliability
› Reduced system design complexity
› Improved manufacturability
CIPOS™ product overview
Depending on the level of integration and power to be handled, Infineon oers a variety of IPMs, with dierent
semiconductors in dierent packages and dierent voltage and current classes.
CIPOS™ IPMs are families of highly integrated, compact power modules designed to drive motors in applications
ranging from home appliances to fans, pumps, and general purpose drives.
Infineon’s energy-eicient IPMs integrate the latest power semiconductor and control IC technology leveraging Infineon’s
advanced IGBTs, MOSFETs, next-generation gate driver ICs and state-of-the-art thermo-mechanical technology.
CIPOS™ Nano CIPOS™ Micro CIPOS™ Mini CIPOS™ Maxi
All MOSFET
40/100/250/500 V
250/500 V
MOSFET: 250/500 V
IGBT: 600 V, 3/4/6 A
IGBT: 600 V, 4-30 A
MOSFET: 600 V
IGBT: 1200 V, 5-10 A
7 x 8 x 0.9 mm
8 x 9 x 0.9 mm
12 x 12 x 0.9 mm 29 x 12 x 2.9 mm 36 x 21 x 3.1 mm 36 x 23 x 3.1 mm
Standard IPMCompact IPM
Motor current
0.1 Arms 20 Arms
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
216
217
IPM
www.infineon.com/ipm
Package overview
Key applications
› Small home appliances
› Hair driers
› Air purifiers
› Fans
› Motor drives
› Battery management
› Water pumps
› CPAP
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
217
QFN 12x12
12 x 12 x 0.9 mm
QFN 8x9
8 x 9 x 0.9 mm
QFN 7x8
7 x 8 x 0.9 mm
www.infineon.com/ipm
IPM
CIPOS™ Nano is a family of highly integrated, ultracompact IPMs for high eiciency appliance and light industrial
applications including rectifiers, converters, inverters in power management circuits and motor drives for hair dryers,
air purifiers, ceiling fans, circulation pumps and ventilators. By utilizing an innovative packaging solution, these IPMs
delivers a new benchmark in device size, oering up to a 60 percent smaller footprint than existing three-phase motor
control power IPMs.
The family is comprised of a series of fully integrated three-phase or half-bridge surface-mount motor control circuit
solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module, providing cost
savings through a smaller package design and even eliminating the need for an external heat sink.
CIPOS™ Nano
Three-phase or half-bridge driver with MOSFETs
Key features
› Motor drive-optimized fast recovery FETs
› Heat sink-less operation
› Smallest modules on the market
› Wide range of footprint compatible parts
› Integrated bootstrap functionality
› Untervoltage lockout for all channels
Key benefits
› Cost savings from smaller footprint
and reduced PCB space
› Easy implementation of two or three-phase
motor drives with half-bridge IPMs
› IPMs distribute heat dissipation
and enable elimination of heat sink
› Same PCB footprint to address multiple
application markets (100-230 VAC)
Key applications
› Fan motors
› Low-power general purpose
drives (GPI, servo drives)
› Pumps
› Blowers
› Active filter (active power
factor correction) for HVAC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
219
IPM
www.infineon.com/ipm
CIPOS™ Mini IPMs integrate various power and control components to increase reliability, and to optimize
PCB size and system costs. This simplifies the power design and reduces significantly time-to-market.
The IPMs are designed to control AC motors in variable speed drives for applications from 4 A up to 30 A such as air
conditioning, washing machines, refrigerators, vacuum cleaners, compressors, and industrial drives up to 3 kW.
The package concept is specially adapted to power applications that need good thermal conduction and electrical
isolation, EMI-safe control, innovative fault indication, and overload protection. The feature of Infineon’s reverse
conducting IGBTs or TRENCHSTOP™ IGBTs are used with a new optimized Infineon SOI gate driver IC for excellent
electrical performance.
CIPOS™ Mini
Broad range of applications from PFC to inverter
Key features
› Dual-in-line transfer molded package with DCB substrate
› Current rating from 4 A to 30 A, power rating up to 3 kW
› Optimized for home appliances and motor drives
› Rugged SOI gate driver IC technology
› Advanced protection features
› UL1577 certified
Key benefits
› High integration (bootstrap circuit, thermistor) for easy
design and system space saving
› Single platform possible from 4 A to 30 A
› Enhanced robustness of the advanced IGBT and gate
driver IC technology
› High power density
› Two kinds of substrates provide cost eicient solution for
home appliances
› UL-certified thermistor
Package overview
DIP 36x21
36 x 21 x 3.1 mm
DIP 36x21D
36 x 21 x 3.1 mm
DIP 29x12
29 x 12 x 3.1 mm
DIP 29x12F
29 x 12 x 3.1 mm
SOP 29x12
29 x 12 x 3.1 mm
SOP 29x12F
29 x 12 x 3.1 mm
CIPOS™ Micro is a family of compact IPMs for low power motor drive applications including fans, pumps, air purifiers
and refrigerator compressor drives.
These IPMs oer cost-eective power solutions by leveraging industry standard footprints and processes compatible
with various PCB substrates. The advanced IPMs feature rugged and eicient high voltage MOSFETs and IGBTs
specifically optimized for variable frequency drives with voltage ratings of 250~600 V IGBTs. The IPMs oer DC current
ratings ranging up to 6 A to drive motors up to 100 W without heatsink and up to 300 W with heatsink, and are available
in both through-hole and surface mount package options.
CIPOS™ Micro
Solution for low power motor drive applications
Key features
› Integrated bootstrap functionality
› Undervoltage lockout for all channels
› Matched propagation delay for all channels
› Optimized dV/dt for loss and EMI trade-o
› Advanced input filter with shoot-through protection
› Separate low-side emitter pins for single- or leg-shunt current sensing
› 3.3 V logic compatible
› UL certified NTC thermistor for temperature feedback available
› Various lead forms available including through-hole
and surface mounted
Key benefits
› Ease of design and short time-to-market
› Compact package with multi lead
form options available
› Wide range of current and voltage
ratings in the same package
› Wide range of modules for 110 VAC or
230 VAC applications in the same footprint
› Lower losses than similar modules in the market
Key applications
› Fan motors
› Low-power general purpose
drives (GPI, servo drives)
› Pumps
› Blowers
› Active filter (active power
factor correction) for HVAC
Package overview
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
218
219
IPM
www.infineon.com/ipm
Key applications
› Fan motors
› Low-power general purpose
drives (GPI, servo drives)
› Pumps
› Blowers
› Active filter (active power
factor correction) for HVAC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
219
IPM
www.infineon.com/ipm
CIPOS™ Mini IPMs integrate various power and control components to increase reliability, and to optimize
PCB size and system costs. This simplifies the power design and reduces significantly time-to-market.
The IPMs are designed to control AC motors in variable speed drives for applications from 4 A up to 30 A such as air
conditioning, washing machines, refrigerators, vacuum cleaners, compressors, and industrial drives up to 3 kW.
The package concept is specially adapted to power applications that need good thermal conduction and electrical
isolation, EMI-safe control, innovative fault indication, and overload protection. The feature of Infineon’s reverse
conducting IGBTs or TRENCHSTOP™ IGBTs are used with a new optimized Infineon SOI gate driver IC for excellent
electrical performance.
CIPOS™ Mini
Broad range of applications from PFC to inverter
Key features
› Dual-in-line transfer molded package with DCB substrate
› Current rating from 4 A to 30 A, power rating up to 3 kW
› Optimized for home appliances and motor drives
› Rugged SOI gate driver IC technology
› Advanced protection features
› UL1577 certified
Key benefits
› High integration (bootstrap circuit, thermistor) for easy
design and system space saving
› Single platform possible from 4 A to 30 A
› Enhanced robustness of the advanced IGBT and gate
driver IC technology
› High power density
› Two kinds of substrates provide cost eicient solution for
home appliances
› UL-certified thermistor
Package overview
DIP 36x21
36 x 21 x 3.1 mm
DIP 36x21D
36 x 21 x 3.1 mm
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
221
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
220
221
IPM
DIP36x23D
36 x 23 x 3.1 mm
CIPOS™ Maxi IPMs integrate various power and control components to increase reliability, optimize PCB size and
system costs. It is designed to control three-phase AC motors and permanent magnet motors in variable speed drives
applications, such as low-power motor drives, pumps, fan drives and active filters for HVAC (heating, ventilation, and
air conditioning). The existing portfolio oers 5 A and 10 A in 1200 V class up to 1.8 kW power rating. The smallest
package in 1200 V IPM class oers highest power density and best performance in its class.
IM818 is the first 1200 V IPM that integrated an optimized 6-channel SOI gate driver to provide built-in dead time that
prevents damage from transients. The product concept is especially adapted to power applications, which require
excellent thermal performance and electrical isolation as well as meeting EMI requirements and overload protection.
CIPOS™ Maxi
Solutions for high reliability and performance application
Key features
› Fully isolated dual in-line molded module with DCB
› 1200 V TRENCHSTOP™ IGBT 4
› Rugged 1200 V SOI gate driver technology
› Integrated booststrap functionality
› Overcurrent shutdown
› Undervoltage lockout at all channels
› All of six switches turn-o during protection
› Cross-conduction prevention
› Programmable fault clear timing
› Allowable negative VS potential up to -11 V for signal transmission at VBS of 15 V
› Low side emitter pins accessible for all phase current monitoring (open emitter)
Key benefits
› The smallest package size in 1200 V IPM class with high power density and
best performance
› Enhanced robustness of gate driver technology for excellent protection
› Adapted to high switching application with lower power loss
› Simplified design and manufacturing
Package overview
www.infineon.com/ipm
Key applications
› Fan motors
› Low-power general purpose
drives (GPI, servo drives)
› Pumps
› Blowers
› Active filter (active power
factor correction) for HVAC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
221
Further information, datasheets and documents
www.infineon.com/acdc
www.infineon.com/coolset
www.infineon.com/integrated-powerstages
www.infineon.com/digital-controller
www.infineon.com/lighting-ics
www.infineon.com/isoface
www.infineon.com/eicedriver
www.infineon.com/industrial-transceivers
www.infineon.com/industrial-voltage-regulators
www.infineon.com/industrial-dcdc-converters
www.infineon.com/industrial-profet
www.infineon.com/novalithic
www.infineon.com/dc-motor-bridges
www.infineon.com/shields-for-arduino
www.infineon.com/ipol
www.infineon.com/analog-ipol
www.infineon.com/xdp
www.infineon.com/ipm
www.infineon.com/madk
Videos and eLearnings
www.infineon.com/mediacenter
Infineon support for power ICs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Power ICs support
CIPOS™ IPM product portfolio
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
222
IPM
www.infineon.com/ipm
MOSFET based CIPOS™ IPMs
Product family Voltage [V] Configuration RDS(on) max.
[Ω]
Package Product name
CIPOS™ Nano 40 Half-bridge 0.05 QFN 7x8 IRSM005-800MH
100 Half-bridge 0.02 QFN 7x8 IRSM005-301MH
250 Half-bridge 0.15 QFN 8x9 IRSM808-204MH
3-phase inverter 0.45. ~ 2.20 QFN 12x12 IRSM836-084MA/IRSM836-044MA
IRSM836-024MA
500 Half-bridge 0.80/1.70 QFN 8x9 IRSM807-105MH/IRSM808-105MH
IRSM807-045MH
3-phase inverter 1.70 ~ 6.00 QFN 12x12 IRSM836-045MA/IRSM836-035MA/IRSM836-035MB
IRSM836-025MA/IRSM836-015MA
CIPOS™ Micro 250 3-phase inverter 0.45. ~ 2.20 DIP 29x12F IRSM5y5-084DA/IRSM5y5-044DA 1)
IRSM5y5-024DA 1)
0.45. ~ 2.20 SOP 29x12F IRSM5y5-084PA/IRSM5y5-044DPA 1)
IRSM5y5-024PA 1)
500 1.30 ~ 6.00 DIP 29x12F IRSM5y5-065DA/IRSM5y5-055DA 1)
IRSM5y5-035DA/IRSM5y5-025DA 1)
IRSM5y5-015DA 1)
1.30 ~ 6.00 SOP 29x12F IRSM5y5-065PA/IRSM5y5-055PA 1)
IRSM5y5-035PA/IRSM5y5-025PA 1)
IRSM5y5-015PA 1)
CIPOS™ Mini 600 2/3-phase inverter 0.33 DIP 36x21 IM512-L6A/IM513-L6A
IGBT based CIPOS™ IPMs
Product family Voltage [V] Configuration Rated
current [A]
Package Product name
CIPOS™ Micro 600 3-phase inverter 3.0/4.0 DIP 29x12F
IM240-S6Y1B/IM240-S6Y2B
IM240-M6Y1B/IM240-M6Y2B/IRSM5y6-076DA 1)
4.0/6.0 DIP 29x12
IM231-M6T2B/IM231-L6T2B
3.0/4.0 SOP 29x12F
IM240-S6Z1B
IM240-M6Z1B/IRSM5y6-076PA 1)
4.0/6.0 SOP 29x12
IM231-M6S1B/IM231-L6S1B
CIPOS™ Mini 600 PFC integrated 10.0/15.0 DIP 36x21D
IFCM10S60GD/IFCM10P60GD
IFCM15S60GD/IFCM15P60GD
3-phase inverter 4.0 ~30.0 DIP 36x21
IGCM04F60yA/IGCM04G60yA 2)
IGCM06F60yA/IGCM06G60yA 2)
IGCM10F60yA/IKCM10H60yA/IKCM10L60yA 2)
IGCM15F60yA/ICM15L60yA/IKCM15F60yA/IKCM15H60yA 2)
IGCM20F60yA/IKCM20L60yA
2)
IKCM30F60yA
2)
15.0 ~30.0 DIP 36x21D
IKCM15L60yD/IKCM20L60yD/IKCM30F60yA
2)
650 3-phase interleaved PFC 20 DIP 36x21D
IFCM20T65GD/IFCM20U65GD
2-phase interleaved PFC 30 DIP 36x21D
IFC30T65GD/IFCM30U65GD
CIPOS™ Maxi 1200 3-phase inverter 5.0/10.0 DIP 36x23D IM818-SCC/IM818-MCC
1) y = 0 (with NTC), y = 1 (without NTC)
2) y = G (with NTC), y = H (without NTC)
Further information, datasheets and documents
www.infineon.com/acdc
www.infineon.com/coolset
www.infineon.com/integrated-powerstages
www.infineon.com/digital-controller
www.infineon.com/lighting-ics
www.infineon.com/isoface
www.infineon.com/eicedriver
www.infineon.com/industrial-transceivers
www.infineon.com/industrial-voltage-regulators
www.infineon.com/industrial-dcdc-converters
www.infineon.com/industrial-profet
www.infineon.com/novalithic
www.infineon.com/dc-motor-bridges
www.infineon.com/shields-for-arduino
www.infineon.com/ipol
www.infineon.com/analog-ipol
www.infineon.com/xdp
www.infineon.com/ipm
www.infineon.com/madk
Videos and eLearnings
www.infineon.com/mediacenter
Infineon support for power ICs
Useful links and helpful information
Simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Power ICs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
225
EiceDRIVER™
Product features
› 4 A source/8 A sink current
› 6 ns rise/5 ns fall times
› ± 5 ns propagation delay precision
› True rail-to-rail low impedance output stages
› 4 V and 8 V UVLO options
› 19 ns propagation delay
› -10 V robustness of inputs
› 5 A reverse output current robustness
› Industry standard pinout and packages
Product benefits
› Fast Miller plateau transition
› Precise timing
› Low power dissipation in driver IC
› Fast and reliable MOSFET turn-o,
independent of control IC
› Increased GND-bounce robustness
› Saving switching diodes
› Straight forward design upgrades
Application benefits
› High power eiciency
– in hard switching PFC with SiC diode
– in half-bridges and synchronous rectifications
› Cooler driver IC operation
› Higher MOSFET drive capability
› Instant MOSFET protection during start-up and
under abnormal operation
› Crucial safety margin to drive pulse transformer
› Increases power density
› BOM savings
› Short time-to-market
PFC controller
L
GND
N
+12
V
Isolation
1EDN
gate driver
1EDN
gate driver
2EDN
gate
driver
Pulse
transformer
PWM controller
1EDN
gate driver
Synchronous rectification
LLC
PFC
CoolSiC™
Schottky diode G6
OptiMOS™ 5OptiMOS™ 5
CoolMOS™
CFD7 or P7
CoolMOS™
CFD7 or P7
CoolMOS™
C7 or P7
Application overview: 800 W switched mode power supply
Package UVLO Product name
Orderable part number Pinout
SOT-23 6-pin
4 V 1EDN7511B 1EDN7511BXUSA1 1
1EDN
VDD
2
3
IN+
GND
6
IN-
5
4
OUT_SNK
OUT_SRC
8 V 1EDN8511B 1EDN8511BXUSA1
SOT-23 5-pin 4 V 1EDN7512B 1EDN7512BXTSA1
1
1EDN
VDD
2
3
OUT
IN-
5
4
IN+
GND
WSON 6-pin 4 V 1EDN7512G 1EDN7512GXTMA1
1
1EDN
IN-
2
3
IN+
OUT
VDD
6
5
4
GND
GND
www.infineon.com/1edn
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
224
225
EiceDRIVER™
Industrial and general purpose gate driver ICs
The expert's choice
Leveraging the application expertise and advanced technologies of Infineon, the industrial and general purpose gate
driver ICs are well suited for many applications such as industrial motor drives, solar inverters, UPS, switch mode
power supplies, lighting and major home appliances. Infineon oers a comprehensive portfolio of industrial and
general purpose gate driver ICs with a variety of configurations, voltage classes, isolation levels, protection features,
and package options. These flexible gate driver ICs are complementary to Infineon IGBTs, MOSFETs, SiC MOSFET,
GaN HEMTs and other power switches in discrete gate drive applications, or as a part of integrated power modules.
EiceDRIVER™ 1EDN family
Rugged, cool and fast, single-channel low-side 4/8 A gate driver ICs
EiceDRIVER™ 1EDN family
Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching
devices. Gate driver ICs enable high system level eiciencies, excellent power density and consistent system robustness.
EiceDRIVER™ 1EDN family: fast, precise, strong and compatible
› Highly eicient SMPS enabled by 5 ns short slew rates and ± 5 ns propagation delay precision for fast MOSFET and
GaN switching
› Separate source and sink outputs simplify the application design
› Industry standard packages and pinout ease system design upgrades
EiceDRIVER™ 1EDN family: the new reference in ruggedness and low power dissipation
› -10 V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
› 5 A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in
TO-220 and TO-247 packages
› Cool driver ICs thanks to true rail-to-rail low impedance output stages
› 4 V and 8 V UVLO (undervoltage lockout) options for instant MOSFET protection during start-up and under
abnormal conditions
Applications
› PFC
› Synchronous rectification
› DC-DC converters
› Telecom bricks
› Power tools
› Industrial SMPS
› Motor control
› Wireless charging
www.infineon.com/1edn
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
225
EiceDRIVER™
Product features
› 4 A source/8 A sink current
› 6 ns rise/5 ns fall times
› ± 5 ns propagation delay precision
› True rail-to-rail low impedance output stages
› 4 V and 8 V UVLO options
› 19 ns propagation delay
› -10 V robustness of inputs
› 5 A reverse output current robustness
› Industry standard pinout and packages
Product benefits
› Fast Miller plateau transition
› Precise timing
› Low power dissipation in driver IC
› Fast and reliable MOSFET turn-o,
independent of control IC
› Increased GND-bounce robustness
› Saving switching diodes
› Straight forward design upgrades
Application benefits
› High power eiciency
– in hard switching PFC with SiC diode
– in half-bridges and synchronous rectifications
› Cooler driver IC operation
› Higher MOSFET drive capability
› Instant MOSFET protection during start-up and
under abnormal operation
› Crucial safety margin to drive pulse transformer
› Increases power density
› BOM savings
› Short time-to-market
PFC controller
L
GND
N
+12
V
Isolation
1EDN
gate driver
1EDN
gate driver
2EDN
gate
driver
Pulse
transformer
PWM controller
1EDN
gate driver
Synchronous rectification
LLC
PFC
CoolSiC™
Schottky diode G6
OptiMOS™ 5OptiMOS™ 5
CoolMOS™
CFD7 or P7
CoolMOS™
CFD7 or P7
CoolMOS™
C7 or P7
Application overview: 800 W switched mode power supply
Package UVLO Product name
Orderable part number Pinout
SOT-23 6-pin
4 V 1EDN7511B 1EDN7511BXUSA1 1
1EDN
VDD
2
3
IN+
GND
6
IN-
5
4
OUT_SNK
OUT_SRC
8 V 1EDN8511B 1EDN8511BXUSA1
SOT-23 5-pin 4 V 1EDN7512B 1EDN7512BXTSA1
1
1EDN
VDD
2
3
OUT
IN-
5
4
IN+
GND
WSON 6-pin 4 V 1EDN7512G 1EDN7512GXTMA1
1
1EDN
IN-
2
3
IN+
OUT
VDD
6
5
4
GND
GND
www.infineon.com/1edn
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
227
EiceDRIVER™
www.infineon.com/TDI
1EDN7550 driving CoolMOS™ SJ MOSFET on single-layer PCB
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
CoolMOS™
P7
Rbias
RG1
RG2
12 V
Cbias
PWM
controller
GND
PWM
Parasitic
source
inductance
1EDN
7550
OUT source
RCM2
RCM1
CS
Parasitic
GND
Inductance
Type Ground shi robustness UVLO Package Orderable part
number
dynamic static
1EDN7550B +/- 150 V +/- 70 V 4 V SOT-23 6-pin 1EDN7550BXTSA1
1EDN8550B +/- 150 V +/- 70 V 8 V SOT-23 6-pin 1EDN8550BXTSA1
1EDN8550 driving Kelvin source CoolMOS™ SJ MOSFET in boost PFC
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
Rbias
RG1
RG2
12 V
Cbias
Kelvin-source contact
PFC
controller
CS
GND
Rcurrent sense
Parasitic
source
inductance
OUT source
RCM2
RCM1
CoolMOS™
P7, C7 or G7
CS IN -
IN +
OUT
1EDN
8550
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
226
227
EiceDRIVER™
EiceDRIVER™ 1EDN7550 and 1EDN8550
Single-channel low-side gate driver family with truly dierential inputs
prevents false triggering of power MOSFETs
Overview
The input signal levels of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver
IC. If in the application, the ground potential of the gate driver IC shis excessively false triggering of the gate driver IC
can occur.
The 1EDN7550/1EDN8550 gate driver ICs have truly dierential inputs. Their control signal inputs are largely independent
from the ground potential. Only the voltage dierence between its input contacts is relevant. This prevents false
triggering of power MOSFETs.
Applications
› Server
› Telecom
› DC-DC converters
› Telecom bricks
› Power tools
› Industrial SMPS
› Wireless charging
› Solar micro inverter
www.infineon.com/1EDN-TDI
Product features
› Truly dierential inputs
› 4 A source current
› 8 A sink current
› Separate source/sink outputs
› Low-ohmic output stage
› 29 ns input minimum pulse width
› 7 ns propagation delay accuracy
› 5 A reverse current robustness
of the outputs
› 4 V and 8 V UVLO versions
› SOT-23 package, 6 pins
Product benefits
› Control inputs independent
from gate driver GND
› Fast Miller plateau transition
› Fast shut-o
› No diode voltage drop → near zero
gate voltage at turn-o
› Low power dissipation within gate driver IC
› Up to 15 MHz switching speed
› Precise
› No Schottky clamping diodes required
› Fast and reliable MOSFET turn-o
› Small
Application benefits
› Robust against ground shis
from power MOSFET switching
› Low MOSFET switching losses
› Robust against false
MOSFET triggering
› Highest eective MOSFET
driving power
› Eiciency gains
› Increased power density and BOM savings
› Instant MOSFET protection under abnormal
operation
› High power density
Pinout
1
1EDN7511B
1EDN8511B
VDD
2
3
IN+
GND
6
IN-
5
4
OUT_SNK
OUT_SRC
OUT_SNK
OUT_SRC
VDD
IN+
GND
IN-
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
227
EiceDRIVER™
www.infineon.com/TDI
1EDN7550 driving CoolMOS™ SJ MOSFET on single-layer PCB
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
CoolMOS™
P7
Rbias
RG1
RG2
12 V
Cbias
PWM
controller
GND
PWM
Parasitic
source
inductance
1EDN
7550
OUT source
RCM2
RCM1
CS
Parasitic
GND
Inductance
Type Ground shi robustness UVLO Package Orderable part
number
dynamic static
1EDN7550B +/- 150 V +/- 70 V 4 V SOT-23 6-pin 1EDN7550BXTSA1
1EDN8550B +/- 150 V +/- 70 V 8 V SOT-23 6-pin 1EDN8550BXTSA1
1EDN8550 driving Kelvin source CoolMOS™ SJ MOSFET in boost PFC
in +
VDD
in - OUT sink
Cbulk
CoolSiC™
Rbias
RG1
RG2
12 V
Cbias
Kelvin-source contact
PFC
controller
CS
GND
Rcurrent sense
Parasitic
source
inductance
OUT source
RCM2
RCM1
CoolMOS™
P7, C7 or G7
CS IN -
IN +
OUT
1EDN
8550
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
229
EiceDRIVER™
Application overview 800W 130kHz switched mode power supply
110
VAC - 240 VAC
2EDN
Gate driver
PFC controller
Isolation
PWM controller
2EDN
Gate driver
2EDN
Gate
driver
Pulse
transformer
GND
GND
+12
V
CoolMOS™
CFD7 or P7
CoolSiC™
Schottky diode G6
CoolMOS™
C7 or P7
LLC Sync. rec.PFC
CoolMOS™
CFD7 or P7
ICE3PCS01G
ICE2HS01G
or
XMC4000
OptiMOS™ 5
OptiMOS™ 5
Package UVLO Inputs Product name
Orderable part number
Current
DSO 8-pin
4 V
Direct 2EDN7524F 2EDN7524FXTMA1 5 A
Inverted 2EDN7523F 2EDN7523FXTMA1
Direct 2EDN7424F 2EDN7424FXTMA1 4 A
8 V Direct 2EDN8524F 2EDN8524FXTMA1
5 A
Inverted 2EDN8523F 2EDN8523FXTMA1
TSSOP 8-pin
4 V
Direct 2EDN7524R 2EDN7524RXUMA1
Inverted 2EDN7523R 2EDN7523RXUMA1
Direct 2EDN7424R 2EDN7424RXUMA1 4 A
8 V Direct 2EDN8524R 2EDN8524RXUMA1
5 A
Inverted 2EDN8523R 2EDN8523RXUMA1
WSON 8-pin 4 V Direct 2EDN7524G 2EDN7524GXTMA1
Inverted 2EDN7523G 2EDN7523GXTMA1
Industry standard pinout configuration
www.infineon.com/2edn
1
2EDN7524
ENA
2INA
3
GND
4
ENB
OUT
A
VDD
OUTB
8
7
6
5INB
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
228
229
EiceDRIVER™
EiceDRIVER™ 2EDN family
Rugged, cool and fast, dual-channel low-side 4 A/5 A driver IC
EiceDRIVER™ 2EDN family overview
Dual-channel driver ICs are the crucial link between digital control ICs and powerful MOSFET and GaN switching
devices. Driver ICs enable high system level eiciencies, excellent power density and consistent system robustness.
EiceDRIVER™ 2EDN family: fast, precise, strong and compatible
› Highly eicient SMPS enabled by 5 ns short slew rates and 10 ns propagation delay precision
for fast MOSFET and GaN switching
› Numerous deployment options due to two 4 A/5 A channels. 1 ns channel-to-channel accuracy
to use two channels in parallel
› Industry standard packages and pinout ease system design upgrades
EiceDRIVER™ 2EDN family: the new reference in ruggedness and low power dissipation
› 4 V and 8 V UVLO (undervoltage lockout) options for instant MOSFET protection under abnormal conditions
› -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers or
driving MOSFETs in TO-220 and TO-247 packages
› 5 A reverse output current robustness eliminates the need for Schottky switching diodes and reduces bill-of-material
› Cool driver ICs from true rail-to-rail low impedance output stages
Applications
› Server
› Telecom
› DC-DC converters
› Bricks
› Power tools
› Industrial SMPS
› Motor control
› Solar
Product features
› 5 A souce/sink current
› 5 ns rise/fall times
› <10 ns propagation delay precision
› True rail-to-rail low impedance output stages
› 4 V and 8 V UVLO options
› 19 ns propagation delay for both control and
enable inputs
› -10V robustness of control and enable inputs
› 5 A reverse output current robustness
› 2 independent channels
› Excellent 1 ns channel-to-channel accuracy
› Industry standard pinout and packages
Product benefits
› Fast Miller plateau transition
› Precise timing
› Low power dissipation in driver IC
› Fast and reliable MOSFET turn-o, independent
of control IC
› Increased GND-bounce robustness
› Saves switching diodes
› Option to increase drive current by truly
concurrent switching of 2 channels
› Straight forward design upgrades
Application benefits
› High power eiciency
– in hard switching PFC with SiC diode
– in half-bridges and synchronous rectifications
› Cooler driver IC operation
› Higher MOSFET drive capability
› Instant MOSFET protection under abnormal
operation
› Crucial safety margin to drive pulse transformer
› Increases power density
› BOM savings
› One IC covering many applications
› Short time to market
www.infineon.com/2edn
Package overview
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
229
EiceDRIVER™
Application overview 800W 130kHz switched mode power supply
110
VAC - 240 VAC
2EDN
Gate driver
PFC controller
Isolation
PWM controller
2EDN
Gate driver
2EDN
Gate
driver
Pulse
transformer
GND
GND
+12
V
CoolMOS™
CFD7 or P7
CoolSiC™
Schottky diode G6
CoolMOS™
C7 or P7
LLC Sync. rec.PFC
CoolMOS™
CFD7 or P7
ICE3PCS01G
ICE2HS01G
or
XMC4000
OptiMOS™ 5
OptiMOS™ 5
Package UVLO Inputs Product name
Orderable part number
Current
DSO 8-pin
4 V
Direct 2EDN7524F 2EDN7524FXTMA1 5 A
Inverted 2EDN7523F 2EDN7523FXTMA1
Direct 2EDN7424F 2EDN7424FXTMA1 4 A
8 V Direct 2EDN8524F 2EDN8524FXTMA1
5 A
Inverted 2EDN8523F 2EDN8523FXTMA1
TSSOP 8-pin
4 V
Direct 2EDN7524R 2EDN7524RXUMA1
Inverted 2EDN7523R 2EDN7523RXUMA1
Direct 2EDN7424R 2EDN7424RXUMA1 4 A
8 V Direct 2EDN8524R 2EDN8524RXUMA1
5 A
Inverted 2EDN8523R 2EDN8523RXUMA1
WSON 8-pin 4 V Direct 2EDN7524G 2EDN7524GXTMA1
Inverted 2EDN7523G 2EDN7523GXTMA1
Industry standard pinout configuration
www.infineon.com/2edn
1
2EDN7524
ENA
2INA
3
GND
4
ENB
OUT
A
VDD
OUTB
8
7
6
5INB
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
231
EiceDRIVER™
System application diagram
For further latest device information, configurations and application notes visit www.infineon.com/2EDi
www.infineon.com/2edi
DSO 16-pin
Narrow body
1.27 mm lead pitch
Functional isolation
LGA 13-pin 5x5 mm
0.65 mm lead pitch
Functional isolation
DSO 16-pin
Wide body
1.27 mm lead pitch
Reinforced isolation
4 mm 8 mm
Part number Orderable part
number (OPN) Package PWM
Input type
Driver
source/
Sink
current
Gate
driver
UVLO
Input to output isolation Dead-time
control
Isolation class Rating Surge testing Safety
certification
2EDF7275F 2EDF7275FXUMA1 NB-DSO16
10 x 6 mm
Dual Mode
(IN_A, IN_B)
4 A/8 A
4 V Functional VIO =1.5 kVDC n.a. n.a.
no
2EDF7175F 2EDF7175FXUMA1 1 A/2 A
2EDF7275K 2EDF7275KXUMA1 LGA13
5.0 x 5.0 mm 4 A/8 A
2EDF7235K 2EDF7235KXUMA1 yes
2EDS8265H 2EDS8265HXUMA1 WB-DSO16
10.3 x 10.3 mm 8 V Reinforced
VIOTM = 8 kVpeak
(VDE0884-1x)
VISO = 5.7 kVrms
(UL1577)
VIOSM = 10 kVpeak
(IEC60065)
VDE0884-10
UL1577
IEC60950
IEC62368
CQC
no
2EDS8165H 2EDS8165HXUMA1 1 A/2 A
PFC
EMI
Filter
Primary
stage
Sync
Rec
Isolated
DC-DC
Non-isolated
DC-DC Brick
2EDF7275F 4 A/8 A
2EDF7175F 1 A/2 A
2EDS8265H 4 A/8 A
2EDS8165H 1 A/2 A
2EDF7275K 4 A/8 A
2EDF7235K 4 A/8 A w. DTC
TCOM supplies
TCOM PDU
CPU (VRM)
POL power
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
230
231
EiceDRIVER™
EiceDRIVER™ 2EDi product family
Fast, robust, dual-channel, functional and reinforced isolated
MOSFET gate drivers with accurate and stable timing
2EDi family overview
The EiceDRIVER™ 2EDi product family is designed for use in high-performance power conversion applications.
Very strong 4 A/8 A source/sink dual-channel gate drivers increase eiciency in CoolMOS™ and OptiMOS™ MOSFET
half-bridges. The low propagation delay of 37 ns, combined with highly accurate and stable timing overtemperature
and production, enables further eiciency gains within and across galvanically isolated power stages or in multi-phase/
multi-level topologies. The availability of functional and reinforced isolated drivers in dierent packages makes these
a perfect fit for both primary side and (safe) secondary side control. Gate driver outputs come with a high 5 A reverse
current capability and 150 V/ns CMTI robustness for high dv/dt power loops. For slower switching or driving smaller
MOSFETs, 1 A/2 A peak current product variants are available as well.
Device overview
EiceDRIVER™ 2EDi product familiy device diagram
Product key features Product benefits System benefits
Fast power switching with accurate timing
› Available with 4 A/8 A and 1 A/2 A source/sink
currents
› Propagation delay typ. 37 ns with 3 ns
channel-to-channel mismatch
› Max. delay variation ~14 ns
Eiciency gain and lower losses
› Lower switching losses in half-bridges due to fast
and accurate turn on/o
› Perfect for new digital, fast high resolution PWM
control including light load optimization
Enabling higher system eiciency and higher
power density designs
Optimized for area and system BOM
› Isolation and driver in one package
› Low power dissipation due to low on-resistance
› Output stages with 5A reverse current capability
Improved thermal behavior at smaller form factor
› LGA with 1 mm, DSO with 2.3 mm package height
versus volume > 1 cm3 for pulse transformers
› Eliminates two costly protection diodes on the
gate driver outputs
Improving long term competitive cost position,
integration and mass manufacturability
Robust design against switching noise
› Floating drivers are able to handle large
inductive voltage over- and undershoots
› Very good common mode transient immunity
CMTI >150 V/ns
› Undervoltage lockout function for switch
protection
Protection and safe operation
› Ideal for use in high power designs with fast
switching transients
› Reliable CT coreless transformer PWM signal
chain to turn on high side MOSFETs
Extending end-product lifetime
by improving safe operation of power switches in
normal and abnormal field (grid) conditions
Output- to -output channel isolation
› Functional level galvanic isolation Flexible configurations
› HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS
Lower EMI by ground isolation, driver
proximity to MOSFETs or the use of 4-pin
Kelvin source MOSFETs
Input- to output channel isolation
› Functional and reinforced galvanic isolation Regulatory safety
› Functional for primary-side control
› Reinforced for secondary-side control
Simplified safety approval through component
(VDE884-x, UL1577) and system (IEC60950,
IEC62386) certificates
INB
GNDI
VDDI
VDDB
OUTB
GNDB
TX RX
UVLO
Logic
Input- to-output
isolation
VDDA
OUTA
GNDA
RX
UVLO
Logic
TX
INA
SLDON
SLDOP SLDO
NC
DTC
Channel-to-channel
isolation
Dead time
control
DISABLE
ENABLE
UVLO
Control
logic
www.infineon.com/2edi
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
231
EiceDRIVER™
System application diagram
For further latest device information, configurations and application notes visit www.infineon.com/2EDi
www.infineon.com/2edi
DSO 16-pin
Narrow body
1.27 mm lead pitch
Functional isolation
LGA 13-pin 5x5 mm
0.65 mm lead pitch
Functional isolation
DSO 16-pin
Wide body
1.27 mm lead pitch
Reinforced isolation
4 mm 8 mm
Part number Orderable part
number (OPN) Package PWM
Input type
Driver
source/
Sink
current
Gate
driver
UVLO
Input to output isolation Dead-time
control
Isolation class Rating Surge testing Safety
certification
2EDF7275F 2EDF7275FXUMA1 NB-DSO16
10 x 6 mm
Dual Mode
(IN_A, IN_B)
4 A/8 A
4 V Functional VIO =1.5 kVDC n.a. n.a.
no
2EDF7175F 2EDF7175FXUMA1 1 A/2 A
2EDF7275K 2EDF7275KXUMA1 LGA13
5.0 x 5.0 mm 4 A/8 A
2EDF7235K 2EDF7235KXUMA1 yes
2EDS8265H 2EDS8265HXUMA1 WB-DSO16
10.3 x 10.3 mm 8 V Reinforced
VIOTM = 8 kVpeak
(VDE0884-1x)
VISO = 5.7 kVrms
(UL1577)
VIOSM = 10 kVpeak
(IEC60065)
VDE0884-10
UL1577
IEC60950
IEC62368
CQC
no
2EDS8165H 2EDS8165HXUMA1 1 A/2 A
PFC
EMI
Filter
Primary
stage
Sync
Rec
Isolated
DC-DC
Non-isolated
DC-DC Brick
2EDF7275F 4 A/8 A
2EDF7175F 1 A/2 A
2EDS8265H 4 A/8 A
2EDS8165H 1 A/2 A
2EDF7275K 4 A/8 A
2EDF7235K 4 A/8 A w. DTC
TCOM supplies
TCOM PDU
CPU (VRM)
POL power
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
233
GaN EiceDRIVER™ family
GaN EiceDRIVER™ ICs evaluation environment
High frequency (1 MHz) half-bridge evaluation board EVAL_1EDF_G1_HB_GAN
Key components:
GaN switches: 2x CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
GaN drivers: 2x GaN EiceDRIVER™ (1EDF5673K)
Order code: EVAL_1EDF_G1_HB_GAN
High power SMPS application example
www.infineon.com/gan-eicedriver
Package
LGA 13-pin 5x5 mm DSO 16-pin 150 mil DSO 16-pin 300 mil
Product 1EDF5673K 1EDF5673F 1EDS5663H
OPN 1EDF5673KXUMA1 1EDF5673FXUMA1 1EDS5663HXUMA1
Isolation (input to output) VIO = 1500 VDC VIO = 1500 VDC VIOTM = 8000 Vpk (VDE0884-10 pending)
Source/sink output resistance 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω
UVLO 4.5 V / 5.0 V 4.5 V / 5.0 V 4.5 V / 5.0 V
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
EiceDRIVER™
2EDF7275
GaN EiceDRIVER™
1EDF5673*
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
232
233
GaN EiceDRIVER™ family
GaN EiceDRIVER™ family
Single-channel isolated gate driver ICs for high voltage GaN switches
CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H.
They ensure robust and highly eicient high voltage GaN switch operation whilst concurrently minimizing R&D eorts
and shortening time-to-market.
www.infineon.com/gan-eicedriver
Key advantages of designing with the GaN EiceDRIVER™ family
Positive and negative gate drive currents:
› Fast turn-on/turn-o GaN switch slew-rates
Firmly hold gate voltage at zero, during o-phase:
› Avoids spurious GaN switch turn-on
› Up to 50% lower dead time losses
Configurable and constant GaN switching slew-rates, across wide
range of switching frequency and duty-cycle:
› Robust and energy eicient SMPS designs
› Short time to market
Integrated galvanic isolation:
› Robust operation in hard-switching applications
› Safe isolation where needed
Key features
Low ohmic outputs:
› Source: 0.85 Ω
› Sink: 0.35 Ω
› Single-channel galvanic isolation:
Functional:
› VIO= 1500 VDC
VIOWM = 510 Vrms (DSO 16-pin)
VIOWM = 460 Vrms (LGA 5x5)
Reinforced:
› VIOTM = 8000 Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
› CMTI min: 200 V/ns
Timing:
› Minimum output pulse width: 18 ns
› Propagation delay accuracy: 13 ns
Key applications
Charger
Key use cases
› Totem pole PFCs
› Vienna rectifiers
› Multilevel topologies
› Resonant LLC
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
233
GaN EiceDRIVER™ family
GaN EiceDRIVER™ ICs evaluation environment
High frequency (1 MHz) half-bridge evaluation board EVAL_1EDF_G1_HB_GAN
Key components:
GaN switches: 2x CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
GaN drivers: 2x GaN EiceDRIVER™ (1EDF5673K)
Order code: EVAL_1EDF_G1_HB_GAN
High power SMPS application example
www.infineon.com/gan-eicedriver
Package
LGA 13-pin 5x5 mm DSO 16-pin 150 mil DSO 16-pin 300 mil
Product 1EDF5673K 1EDF5673F 1EDS5663H
OPN 1EDF5673KXUMA1 1EDF5673FXUMA1 1EDS5663HXUMA1
Isolation (input to output) VIO = 1500 VDC VIO = 1500 VDC VIOTM = 8000 Vpk (VDE0884-10 pending)
Source/sink output resistance 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω 0.85 Ω/0.35 Ω
UVLO 4.5 V / 5.0 V 4.5 V / 5.0 V 4.5 V / 5.0 V
CoolMOS™
CoolMOS™
OptiMOS™
OptiMOS™
OptiMOS™
OptiMOS™
AC
LINE
EMI
filter
EiceDRIVER™
2EDF7275
LLC
controller
Totem pole
Full-bridge PFC Resonant LLC Synchronous
rectifier
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
High voltage
CoolGaN™
*GaN EiceDRIVER™ ICs are single-channel products
EiceDRIVER™
2EDF7275
GaN EiceDRIVER™
1EDF5673*
GaN EiceDRIVER™
1EDS5663H*
PFC
controller
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
235
SOI gate driver ICs
6ED2230S12T - 1200 V three-phase gate driver with overcurrent protection
and integrated bootstrap diode (BSD)*
The 6ED2230S12T is a 1200 V three-phase SOI gate driver with an integrated bootstrap diode
and overcurrent protection, with typical 0.35 A source and 0.65 A sink currents in a DSO-24
package (DSO-28 with 4 pins removed) for driving IGBTs. Proprietary HVIC and latch-immune
CMOS technologies enable a robust monolithic design. A current-trip function which terminates
all six outputs can also be derived from this resistor. An open-drain FAULT signal is provided
to indicate that an overcurrent or undervoltage shutdown has occurred. Fault conditions are
cleared automatically aer a delay programmed externally via an RC network. The output
drivers feature a high-pulse current buer stage designed for minimum driver cross conduction.
Propagation delays are matched to simplify the HVIC’s use in high-frequency applications.
Product features
› Infineon thin-film SOI technology
› Fully operational to +1200 V
› Floating channel designed for bootstrap operation
› Output source/sink current capability +0.35 A/-0.65 A
› Integrated ultrafast, low RDS(ON) bootstrap diode
› Tolerant to negative transient voltage up to -100 V
(pulse width is up 700 ns) given by SOI technology
› Undervoltage lockout for both channels
› 3.3 V, 5 V, and 15 V input logic compatible
› Overcurrent protection (ITRIP ±5% reference)
› Fault reporting, automatic fault clear and enable func-
tion on the same pin (RFE)
› Matched propagation delay for all channels
› Integrated 460 ns dead time protection
› Shoot-through (cross-conduction) protection
› 2.5kV HBM ESD protection
Typical applications
› Industrial drives, motor control, general purpose inverters
› Commercial air-conditioning (CAC)
Typical application diagram
Negative VS transient robustness of Infineon SOI
* Coming soon
DC BUS+
To load
DC BU
S–
VCC
HIN 1, 2, 3
FLT/EN/RCIN
ITRIP
VSSCOM
LO 1, 2, 3
VS 1, 2, 3
HO 1, 2, 3
VB 1, 2, 3
LIN 1, 2, 3
Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T
-20
-100
-120
-40
-60
-80
0
PW (ns)
Minus Vs (V)
0 200 400 600 800 1000
SOA
Evaluation board available:
EVAL-M1-6ED2230-B1
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
234
235
SOI gate driver ICs
Level-shi silicon-on-insulator (SOI) gate driver ICs
2ED2304S06F - 650 V half-bridge gate driver with integrated bootstrap diode (BSD)
The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides
excellent ruggedness and noise immunity. The output drivers feature a high pulse current buer
stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V.
Additionally, the oline clamping function provides an inherent protection of the parasitic
turn-on by floating gate conditions when IC is not supplied.
Product features
› Infineon thin-film SOI technology
› Fully operational to +650 V
› Floating channel designed for bootstrap operation
› Output source/sink current capability +0.36 A/-0.7 A
› Integrated ultrafast, low RDS(ON) bootstrap diode
› Tolerant to negative transient voltage up to -50 V (pulse
width is up 500 ns) given by SOI technology
› 10 ns typ., 60 ns max. propagation delay matching
› dV/dt immune ±50 V
› Gate drive supply range from 10 to 20 V
› Undervoltage lockout for both channels
› 3.3 V, 5 V and 15 V input logic compatible
› RoHS compliant
Potential applications
› Motor drives, general purpose inverters
› Refrigeration compressors
› Half-bridge and full-bridge converters in oline AC-DC
power supplies for telecom and lighting
Typical application diagram
Power dissipation of Infineon SOI
DC = 300 V; CoolMOS™ P7 in D-Pak; 300 kHz switching frequency
120.3°
20.4°
Infineon SOI HS+LS driver
Max. temperature 66.6°
Standard HS+LS driver
Max. temperature 122.2°
www.infineon.com/2ED2304
LIN
VS
LO
GND
to Load
HIN
VCC
DC-Bus
-DC-Bus
HO
to Opamp/ comparato
r
VB
VCC
µC
PWM_H
PWM_L
GND
+5 V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
235
SOI gate driver ICs
6ED2230S12T - 1200 V three-phase gate driver with overcurrent protection
and integrated bootstrap diode (BSD)*
The 6ED2230S12T is a 1200 V three-phase SOI gate driver with an integrated bootstrap diode
and overcurrent protection, with typical 0.35 A source and 0.65 A sink currents in a DSO-24
package (DSO-28 with 4 pins removed) for driving IGBTs. Proprietary HVIC and latch-immune
CMOS technologies enable a robust monolithic design. A current-trip function which terminates
all six outputs can also be derived from this resistor. An open-drain FAULT signal is provided
to indicate that an overcurrent or undervoltage shutdown has occurred. Fault conditions are
cleared automatically aer a delay programmed externally via an RC network. The output
drivers feature a high-pulse current buer stage designed for minimum driver cross conduction.
Propagation delays are matched to simplify the HVIC’s use in high-frequency applications.
Product features
› Infineon thin-film SOI technology
› Fully operational to +1200 V
› Floating channel designed for bootstrap operation
› Output source/sink current capability +0.35 A/-0.65 A
› Integrated ultrafast, low RDS(ON) bootstrap diode
› Tolerant to negative transient voltage up to -100 V
(pulse width is up 700 ns) given by SOI technology
› Undervoltage lockout for both channels
› 3.3 V, 5 V, and 15 V input logic compatible
› Overcurrent protection (ITRIP ±5% reference)
› Fault reporting, automatic fault clear and enable func-
tion on the same pin (RFE)
› Matched propagation delay for all channels
› Integrated 460 ns dead time protection
› Shoot-through (cross-conduction) protection
› 2.5kV HBM ESD protection
Typical applications
› Industrial drives, motor control, general purpose inverters
› Commercial air-conditioning (CAC)
Typical application diagram
Negative VS transient robustness of Infineon SOI
* Coming soon
DC BUS+
To load
DC BU
S–
VCC
HIN 1, 2, 3
FLT/EN/RCIN
ITRIP
VSSCOM
LO 1, 2, 3
VS 1, 2, 3
HO 1, 2, 3
VB 1, 2, 3
LIN 1, 2, 3
Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T
-20
-100
-120
-40
-60
-80
0
PW (ns)
Minus Vs (V)
0 200 400 600 800 1000
SOA
Evaluation board available:
EVAL-M1-6ED2230-B1
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
237
Non-isolated gate driver ICs
Key features
› Integrated overcurrent protection comparator
with accurate OCP threshold
› Single pin for fault output and enable function
› Programmable fault clear time
› Low quiescent supply current
› Separate logic ground and gate driver return
› Undervoltage lockout (UVLO) protection
Key specifications
› 0.5 V overcurrent threshold with accurate ±5
percent tolerance
› Internal Schmitt trigger comparator for the
enable function
› External capacitor (CF LT C ) sets the length of the
fault clear time
› Max IQCC: 750 µA
› VSS and COM pins
› Specific UVLO level for IGBTs
(typ. on/o = 11.9 V / 11.4 V)
System benefits
› Potential space savings up to 50 percent and
cost savings up to 20 percent compared to the
discrete solution
› Flexible fault clear time set-up for dierent
microcontroller processing speeds
› Minimizes power consumption
› Avoids noise coupling from output to input
which improves noise immunity
› Eliminates switching loss at low
VCC supply voltage
Non-isolated low-side gate driver ICs
1ED44176N01F - 25 V low-side gate driver with integrated overcurrent protection
and fault/enable function
The 1ED44176N01F is a low-voltage, non-inverting gate driver designed for ground-referenced applications such as digitally
controlled power-factor correction (PFC) circuits requiring overcurrent protection (OCP). OCP is typically implemented using
a current measurement circuit with a comparator such as LM293 and a network of resistors and capacitors. 1ED44176N01F
provides up to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate current-
sensing threshold tolerance of ±5%. 1ED44176N01F also integrates fault-output reporting to the controller and driver enable
functionality on the same pin. The driver IC also has separate logic and power ground pins for operational robustness.
Product features
› Overcurrent detection with positive voltage input
› +0.8 A/-1.75 A output source/sink current capability
› +0.5 V overcurrent threshold with ±5% tolerance
› Single pin for fault output and enable function
› Programmable fault clear time
› CMOS Schmitt-triggered inputs
› 3.3 V, 5 V and 15 V input logic-compatible
› Output in phase with input
› Separate logic and power ground
› 2 kV ESD HBM
Potential applications
› General purpose low-side gate driver for single-ended
topologies (e.g. digitally controlled PFC or digital
power supplies)
› Residential and commercial air conditioners
› Home appliances
› Industrial applications
Simplified application diagram
Application note, PSPICE or SiMetrix
models, and evaluation board,
EVAL-1ED44176N01F are available at
www.Infineon.com/1ED44176
www.Infineon.com/1ED44176
FLTC
IN
1ED44176N01F
Microcontroller
VCC
OUT
VSS
COM
GND
I/O2
I/O1
VDD
OCP
EN/FLT
VCC
VOUT
CFLTC
VIN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
236
237
JI gate driver ICs
www.infineon.com/gatedriver
Product portfolio
Simplified application diagram
IRS2008S
Simplified application diagram
Part num-
ber
Voltage
class [V]
Configuration Channels Source/sink
current typ.
[mA]
Deadtime
typ. [ns]
Typ. propagation delay
[ns]
Control
inputs
UVLO typ.
[V]
Package MSL
on o
IRS2008S 200 Half-bridge 2 290/600 520 680 150 IN, SD +8.9/-8.2 8-lead SOIC 2
IRS2007S 200 Half-bridge 2 290/600 520 160 150 HIN, LIN +8.9/-8.2 8-lead SOIC 2
IRS2005S 200 High- and low-side 2 290/600 – 160 150 HIN, LIN +8.9/-8.2 8-lead SOIC 2
IRS2005M 200 High- and low-side 2 290/600 – 160 150 HIN, LIN +8.9/-8.2 14-lead 4x4 MLPQ 2
Up to 200 V
to lo
ad
V
CC
VCC VB
VS
IN
IN HO
COMLO
SD
SD
IRS2005 replaces IRS2001 (IRS2001 is not recommended for new designs) / IRS2007 can replace IRS2003 / IRS2008 can replace IRS2004
Infineon oers 200 V ICs tailored for low-voltage (24 V, 36 V, and 48 V) and mid-voltage (60 V, 80 V, and 100 V) motor drive
applications. TheseMOSFETdrivers provide full driver capability with extremely fast switching speeds, designed-in
ruggedness and low power dissipation. The 200 V driver ICs are oered in standard packages and pinout configurations
with various logic input options for high design flexibility and fast time-to-market. Low side supply voltage (VCC) and floating
channel supply (VBS) undervoltage lockout (UVLO) ensures reliable start-up operation.
Level-shi junction isolation (JI) gate driver ICs
New IRS200 x 200 V half-bridge, high and low-side gate driver family
with VCC and VBS UVLO
Product features
› Advanced input filter
› Deadtime and cross-conduction prevention logic
› Fully operational to +600 V oset voltage
› Logic operational for VS* of -8 V
› Operational for transient negative VS -50 V with a
50 ns pulse width
› Integrated bootstrap FET
› Integrated comparator (with 0.5 V ± 5 %
reference) for overcurrent protection
› Fault and enable multifunction pin
New 600 V half-bridge gate driver with overcurrent protection (OCP)
The new IRS2890DS half-bridge gate driver provides typical 0.22 A source
and 0.48 A sink currents in a 14-lead SOIC package for IGBT and MOSFETs.
The IRS2890DS integrates overcurrent protection, fault reporting and
bootstrap FET.
Product benefits
› Reliable switching
› Protection under abnormal operation
› Improved reliability
› High power capability
› Easy-to-use, straight-forward design
› Fast time-to-market
› BOM savings
DC BUS+
DC BUS–
VCC
HIN
LIN
RFE
COMITRIP
LO
VS
HO
VB
IRS2890DS
*High-side floating well supply oset voltage
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
237
Non-isolated gate driver ICs
Key features
› Integrated overcurrent protection comparator
with accurate OCP threshold
› Single pin for fault output and enable function
› Programmable fault clear time
› Low quiescent supply current
› Separate logic ground and gate driver return
› Undervoltage lockout (UVLO) protection
Key specifications
› 0.5 V overcurrent threshold with accurate ±5
percent tolerance
› Internal Schmitt trigger comparator for the
enable function
› External capacitor (CF LT C ) sets the length of the
fault clear time
› Max IQCC: 750 µA
› VSS and COM pins
› Specific UVLO level for IGBTs
(typ. on/o = 11.9 V / 11.4 V)
System benefits
› Potential space savings up to 50 percent and
cost savings up to 20 percent compared to the
discrete solution
› Flexible fault clear time set-up for dierent
microcontroller processing speeds
› Minimizes power consumption
› Avoids noise coupling from output to input
which improves noise immunity
› Eliminates switching loss at low
VCC supply voltage
Non-isolated low-side gate driver ICs
1ED44176N01F - 25 V low-side gate driver with integrated overcurrent protection
and fault/enable function
The 1ED44176N01F is a low-voltage, non-inverting gate driver designed for ground-referenced applications such as digitally
controlled power-factor correction (PFC) circuits requiring overcurrent protection (OCP). OCP is typically implemented using
a current measurement circuit with a comparator such as LM293 and a network of resistors and capacitors. 1ED44176N01F
provides up to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate current-
sensing threshold tolerance of ±5%. 1ED44176N01F also integrates fault-output reporting to the controller and driver enable
functionality on the same pin. The driver IC also has separate logic and power ground pins for operational robustness.
Product features
› Overcurrent detection with positive voltage input
› +0.8 A/-1.75 A output source/sink current capability
› +0.5 V overcurrent threshold with ±5% tolerance
› Single pin for fault output and enable function
› Programmable fault clear time
› CMOS Schmitt-triggered inputs
› 3.3 V, 5 V and 15 V input logic-compatible
› Output in phase with input
› Separate logic and power ground
› 2 kV ESD HBM
Potential applications
› General purpose low-side gate driver for single-ended
topologies (e.g. digitally controlled PFC or digital
power supplies)
› Residential and commercial air conditioners
› Home appliances
› Industrial applications
Simplified application diagram
Application note, PSPICE or SiMetrix
models, and evaluation board,
EVAL-1ED44176N01F are available at
www.Infineon.com/1ED44176
www.Infineon.com/1ED44176
FLTC
IN
1ED44176N01F
Microcontroller
VCC
OUT
VSS
COM
GND
I/O2
I/O1
VDD
OCP
EN/FLT
VCC
VOUT
CFLTC
VIN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
239
www.infineon.com/gatedriver
www.infineon.com/1EDcompact
EiceDRIVER™ 1ED Compact
EiceDRIVER™ 1ED Compact gate driver IC family
1200 V galvanically isolated single-channel gate driver ICs
Infineon’s new EiceDRIVER™ 1EDC Compact 300 mil family is recognized under UL 1577 with an
insulation test voltage of
V
ISO = 2500 V(rms) for 1 min. The functional isolated EiceDRIVER™ 1EDI
Compact 150 mil and 300 mil families are also available. The EiceDRIVER™ 1ED Compact family
is the perfect driver for superjunction MOSFETs such as CoolMOS™, IGBTs, silicon carbide (SiC)
MOSFETs such as CoolSiC™, and IGBT modules.
Product features
› Provide DSO-8 300 mil wide body package with 8 mm creepage distance
› Up to 10 A typical peak rail-to-rail output
› Suitable for operation at high ambient temperature
› Separate source and sink outputs or active miller clamp
› More than 100 kV/μs CMTI
› Optimized pinout for low inductance power supply
1EDI Compact 150 mil 1EDI60I12AF 1EDI40I12AF 1EDI20I12AF 1EDI05I12AF 1EDI60N12AF 1EDI20N12AF 1EDI30I12MF 1EDI20I12MF 1EDI10I12MF
1EDI Compact 300 mil 1EDI60I12AH 1EDI40I12AH 1EDI20I12AH 1EDI05I12AH 1EDI60H12AH 1EDI20H12AH 1EDI30I12MH 1EDI20I12MH 1EDI10I12MH
1EDC Compact 300 mil 1EDC60I12AH 1EDC40I12AH 1EDC20I12AH 1EDC05I12AH 1EDC60H12AH 1EDC20H12AH 1EDC30I12MH 1EDC20I12MH 1EDC10I12MH
Typ. output current [A] 10/-9.4 7.5/-6.8 4/-3.5 1.3/-0.9 10/-9.4 4/-3.5 5.9/-6.2 4.4/-4.1 2.2/-2.3
Output configuration Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Active Miller
clamp
Active Miller
clamp
Active Miller
clamp
Typ. propagation delay [ns]
300 300 300 300 125 125 300 300 300
UVLO Input [V] 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75
Output [V] 12/11.1 12/11.1 12/11.1 12/11.1 12/11.1 (H)
9.1/8.5 (N)
12/11.1 (H)
9.1/8.5 (N)
11.9/11 11.9/11 11.9/11
Simplified application diagram
Separate sink/source outputs Active Miller clamp
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
3R3
OUT-
VCC2
GND2
GND1
IN+
IN-
IN
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
CLAMP
VCC2
GND2
GND1
IN+
IN-
IN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
238
239
EiceDRIVER™ Enhanced
www.infineon.com/gatedriver
www.infineon.com/gdisolated
EiceDRIVER™ Enhanced gate driver IC family
1200 V galvanically isolated enhanced gate driver ICs
The EiceDRIVER™ 1ED Enhanced gate
driver ICs are galvanic isolated single-
channel IGBT and SiC MOSFET drivers
in DSO-16 package that provide
output current capabilities of typically
2 A. The precision DESAT function for
IGBT is also an excellent solution for
SiC MOSFET short-circuit protection.
All logic pins are 5 V CMOS
compatible. 2ED020I12-F2 is
the dual-channel version of
1ED020I12-F2 in DSO-36 package.
2ED020I12-FI is a high voltage, high
speed power MOSFET and IGBT
driver with interlocking high and
low side referenced outputs.
Product features
› Available in wide body package
with 8 mm creepage distance
› Suitable for operation at high
ambient temperature
› Active miller clamp
› Short circuit clamping and
active shutdown
› ≥ 100 kV/μs CMTI
› Precision DESAT protection
EiceDRIVER™ Enhanced 1ED020I12-F2 2ED020I12-F2 1ED020I12-FT 1ED020I12-B2 1ED020I12-BT 2ED020I12-FI
Configuration Single Dual Single Single Single Half Bridge
Package (all 300 mil) DSO-16 DSO-36 DSO-16 DSO-16 DSO-16 DSO-18
Galvanic isolation Functional Functional Functional Basic
(VDE 0884-10)
Basic
(VDE 0884-10)
Functional
on high side
Protection function DESAT, UVLO DESAT, UVLO DESAT, UVLO,
two-level turn-o DESAT, UVLO DESAT, UVLO,
two-level turn-o
UVLO, OPAMP,
comparator
UVLO Input [V] 4.1/3.8 4.1/3.8 4.1/3.8 4.1/3.8 4.1/3.8 12/11
Output [V] 12/11 12/11 12/11 12/11 12/11 12/11
DESAT charge current [μA] 500 500 500 500 500 –
Bipolar output supply ✓✓✓✓✓–
Active miller clamp ✓✓✓✓✓–
Inverting and non-inverting
inputs ✓✓✓✓✓–
Combinable enable/shutdown
and fault feedback signals ✓✓✓✓✓–
TLSET ––✓–✓–
Typical propagation delay [ns] 170 170 170 + TLTO 170 170 + TLTO 85
Isolation definitions
Functional isolation Isolation between conductive parts which is necessary only for the proper functioning of the equipment
Basic isolation (VDE 0884-10) Isolation applied to live parts to provide basic protection against electric shock
Simplified application diagram
+15 V+5 V
RDY
FLT
RST
SGND
10k
10k
100n
1ED020I12-F2
VCC1
1μ
10R
220p
1k
VEE2
VCC2
GND2
NC
OUT
CLAMP
DESAT
GND1
IN+
RDY
/FLT
/RST
IN-
IN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
239
www.infineon.com/gatedriver
www.infineon.com/1EDcompact
EiceDRIVER™ 1ED Compact
EiceDRIVER™ 1ED Compact gate driver IC family
1200 V galvanically isolated single-channel gate driver ICs
Infineon’s new EiceDRIVER™ 1EDC Compact 300 mil family is recognized under UL 1577 with an
insulation test voltage of
V
ISO = 2500 V(rms) for 1 min. The functional isolated EiceDRIVER™ 1EDI
Compact 150 mil and 300 mil families are also available. The EiceDRIVER™ 1ED Compact family
is the perfect driver for superjunction MOSFETs such as CoolMOS™, IGBTs, silicon carbide (SiC)
MOSFETs such as CoolSiC™, and IGBT modules.
Product features
› Provide DSO-8 300 mil wide body package with 8 mm creepage distance
› Up to 10 A typical peak rail-to-rail output
› Suitable for operation at high ambient temperature
› Separate source and sink outputs or active miller clamp
› More than 100 kV/μs CMTI
› Optimized pinout for low inductance power supply
1EDI Compact 150 mil 1EDI60I12AF 1EDI40I12AF 1EDI20I12AF 1EDI05I12AF 1EDI60N12AF 1EDI20N12AF 1EDI30I12MF 1EDI20I12MF 1EDI10I12MF
1EDI Compact 300 mil 1EDI60I12AH 1EDI40I12AH 1EDI20I12AH 1EDI05I12AH 1EDI60H12AH 1EDI20H12AH 1EDI30I12MH 1EDI20I12MH 1EDI10I12MH
1EDC Compact 300 mil 1EDC60I12AH 1EDC40I12AH 1EDC20I12AH 1EDC05I12AH 1EDC60H12AH 1EDC20H12AH 1EDC30I12MH 1EDC20I12MH 1EDC10I12MH
Typ. output current [A] 10/-9.4 7.5/-6.8 4/-3.5 1.3/-0.9 10/-9.4 4/-3.5 5.9/-6.2 4.4/-4.1 2.2/-2.3
Output configuration Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Separate sink/
source outputs
Active Miller
clamp
Active Miller
clamp
Active Miller
clamp
Typ. propagation delay [ns]
300 300 300 300 125 125 300 300 300
UVLO Input [V] 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75 2.85/2.75
Output [V] 12/11.1 12/11.1 12/11.1 12/11.1 12/11.1 (H)
9.1/8.5 (N)
12/11.1 (H)
9.1/8.5 (N)
11.9/11 11.9/11 11.9/11
Simplified application diagram
Separate sink/source outputs Active Miller clamp
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
3R3
OUT-
VCC2
GND2
GND1
IN+
IN-
IN
+5 V
+15 V
SGND
100n
VCC1 OUT+ 10R
1μ
CLAMP
VCC2
GND2
GND1
IN+
IN-
IN
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
241
SRC EiceDRIVER™ family
Simplified application diagram
RSOFF
ROFF
VCC2
T1
Control unit
5V
5V
GND
RS
RPRB2
T2
RDESAT
DDESAT
RF
CDESAT
CF
C3 C2
VCC2
RD
CD
C1
DESAT
RDY2
RDY1
CS
/FLT
GATE
ON
GND2
VZ
VCC2
OFF
CZ
RSENSE
VEE2
SOFF
OCOFF
INP
SPEED
SIGI
SIGO
VCC1
INN
PADP
EN
PADN
GND1
PRB
RPRB1
Feature – real-time gate current control
Eect – gate turn-on tunable across a very large dV/dt range:
Time
I
GATE
[A]
Adjustable gate current
Preboost phase
SRC controlled
gate current in 11 levels
Evaluation board available: EVAL-1EDS20I12SV
www.infineon.com/SRC
-1.5
-1
-0.5
-3.5
0
-2
-2.5
-3
-4
2000
IC [A]
dV/dt [kV/µs]
400 600 800 1000
dV/dt = f(IC, 25°C, VSPEED)
Adjustable
dV/dt range
Minimum speed
Maximum speed
1EDS-SRC driver board with EconoDUAL™ 3 power module
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
240
241
SRC EiceDRIVER™ family
Evaluation board available: EVAL-1EDS20I12SV
www.infineon.com/SRC
The new SRC EiceDRIVER™ family, which includes 1EDS20I12SV, 1EDU20I12SV, and 1EDI20I12SV, is addressing the latest
generation of highly eicient low-EMI electric drive systems, with lower EMI and improved eiciency. Based on the
Infineon's coreless transformer technology, it is the first high voltage isolated gate driver on the market with dynamic
slew-rate control (SRC), which allows on-the-fly dV/dt control of electric drives through precise gate current control,
providing the best trade-o between minimum power dissipation and minimum EMI depending on operating conditions.
To turn on the IGBT, the driver works as an adjustable current source in conjunction with an external PMOS transistor
and a sense resistor. To turn o the IGBT, the driver uses a 2 A MOSFET output stage. Several important and advanced
protection functions are integrated. The driver includes desaturation protection for IGBTs and overcurrent protection for
sense IGBTs via the fault status output pin. Two ready-state output pins indicate proper driver power supply level and
normal driver operation. Two-level turn-o with adjustable timing and voltage protects against excessive overvoltage in
case of the IGBT operating at overcurrent or a short circuit.
The 1EDx20I12SV family is tailored for industrial drive applications such as those using 1200 V power modules for current
up to 900 A like the EconoDUAL™ 3. The driver meets today’s long-term stability requirements for industrial applications.
It is oered in a DSO-36 package with a package width of 300 mil. It is RoHS compliant, green, and halogen-free.
1200 V single-channel slew-rate control (SRC)
gate driver family with reinforced isolation
Product features
› Real-time adjustable gate current control
› DESAT
› Overcurrent protection
› So turn-o shut down
› Two-level turn-o
› Drive power modules up to 900 A
› Drive 1200 V single-channel IGBT driver
› Unique: NPC1 short circuit protection for
three-level inverters
› Low EMI during low load conditions and high eiciency
during high load conditions
› Reduction or elimination of dV/dt filter
Potential applications
› AC and brushless DC motor drives
› High-voltage DC-DC converters
› UPS systems, servo drives
Part Number Isolation rating
1EDS20I12SV Reinforced isolation according VDE 0884-10 (VIORM= 1420 V) and UL 1577 certified with VISO= 5 kV (rms) for 1 min
1EDU20I12SV UL 1577 certified with VISO= 5 kV (rms) for 1 min
1EDI20I12SV Functional isolation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
241
SRC EiceDRIVER™ family
Simplified application diagram
RSOFF
ROFF
VCC2
T1
Control unit
5V
5V
GND
RS
RPRB2
T2
RDESAT
DDESAT
RF
CDESAT
CF
C3 C2
VCC2
RD
CD
C1
DESAT
RDY2
RDY1
CS
/FLT
GATE
ON
GND2
VZ
VCC2
OFF
CZ
RSENSE
VEE2
SOFF
OCOFF
INP
SPEED
SIGI
SIGO
VCC1
INN
PADP
EN
PADN
GND1
PRB
RPRB1
Feature – real-time gate current control
Eect – gate turn-on tunable across a very large dV/dt range:
Time
IGATE [A]
Adjustable gate current
Preboost phase
SRC controlled
gate current in 11 levels
Evaluation board available: EVAL-1EDS20I12SV
www.infineon.com/SRC
-1.5
-1
-0.5
-3.5
0
-2
-2.5
-3
-4
2000
IC [A]
dV/dt [kV/µs]
400 600 800 1000
dV/dt = f(IC, 25°C, VSPEED)
Adjustable
dV/dt range
Minimum speed
Maximum speed
1EDS-SRC driver board with EconoDUAL™ 3 power module
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
243
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Product overview
To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to
by application topology.
* Coming soon
1) Please contact sales team for additional information
Half-bridge gate driver ICs
Voltage
class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Comparator
Operational amplifier
Desaturation protection
Enable
Fault reporting
Integrated bootstrap diode
Overcurrent protection
Programmable dead time
Programmable shutdown
Self-oscillating (oscillator)
Separate pin for logic ground
Shoot-through protection
Shutdown
So overcurrent shutdown
DSO-8
DSO-14
DSO-16
DSO-16 WB
DSO-18
DIP-8
DIP-14
SSOP-24
VDSON-8
VQFN-14
CHIP1
Features Package
1200 1500/2500 12.2/11.2 85/85 2ED020I12-FI CT ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2214 JI ✓ ✓ ✓ ✓ ✓ ✓
650
2500/2500
9.1/8.2 200/200
2ED2182S06* SOI ✓ ✓ ✓ ✓
2ED21824S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2183S06* SOI ✓ ✓ ✓ ✓
2ED21834S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2184S06* SOI ✓ ✓ ✓ ✓ ✓
2ED21844S06* SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
290/700
2ED2108S06* SOI ✓ ✓ ✓ ✓
2ED21084S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2109S06* SOI ✓ ✓ ✓ ✓ ✓
2ED21094S06* SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2ED21091S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
360 / 700 9.1 / 8.3 300/310 2ED2304S06F NEW SOI ✓ ✓ ✓ ✓
1500/2500 12.2/11.2 85/85 2ED020I06-FI CT ✓ ✓ ✓
600
78/169 8.9/8.2 220/220 IR2304 JI ✓ ✓ ✓
8.9/8.2 IR25601 JI ✓ ✓
180/260
9/8
N.A.
IR21531 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR21531D JI ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR25603 JI ✓ ✓ ✓ ✓ ✓ ✓
11/9 IRS2153(1)D JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
200/350 8.9/8.2
200/220
IR2108 JI ✓ ✓ ✓
IR21084 JI ✓ ✓ ✓ ✓ ✓
IR2308 JI ✓ ✓ ✓
IR25606 JI ✓ ✓
200/750
IR2109 JI ✓ ✓ ✓ ✓
IR21091 JI ✓ ✓ ✓ ✓ ✓
IR21094 JI ✓ ✓ ✓ ✓ ✓ ✓
4.1/3.8 IR2302 JI ✓ ✓ ✓ ✓
210/360
8.9/8.2
150/680
IR2103 JI ✓ ✓ ✓
8.9/8.2 IR2104 JI ✓ ✓ ✓ ✓
8.9/8.2 IR25602 JI ✓ ✓ ✓
220/480 8.9/7.7 500/500 IRS2890D NEW JI ✓ ✓ ✓ ✓ ✓
250/500 8.6/8.2 150/750 IR2111 JI ✓ ✓ ✓
290/600
8.9/8.2 150/150 IRS2304 JI ✓ ✓ ✓ ✓
8.9/8.2 150/680 IRS2103 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS2104 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 150/750 IRS2111 JI ✓ ✓ ✓ ✓
8.9/8.2 200/220 IRS2(1,3)08 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21084 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2
200/750
IRS2109 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21091 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21094 JI ✓ ✓ ✓ ✓ ✓ ✓
360/700 9.1/8.3 300/310 2EDL05N06P SOI ✓ ✓ ✓ ✓
12.5/11.6 400/420 2EDL05I06P SOI ✓ ✓ ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2183 JI ✓✓✓✓
8.9/8.2 IR2183 JI ✓ ✓ ✓
8.9/8.2 IR(S)21834 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2
270/680
IRS2184 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IR2184 JI ✓ ✓ ✓ ✓
8.9/8.2 IR21844 JI ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21844 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2114 JI ✓ ✓ ✓ ✓ ✓ ✓
2300/2800 9.1/8.3 300/310 2EDL23N06P SOI ✓✓✓✓ ✓✓ ✓
12.5/11.6 400/420 2EDL23I06P SOI ✓✓✓✓ ✓✓ ✓
200 290/600 8.9/8.2 150/160 IRS2007 NEW JI ✓ ✓ ✓
150/680 IRS2008 NEW JI ✓ ✓ ✓ ✓
120
2000/6000
7/6.5 47/47
2EDL8112* JI ✓ ✓ ✓
3000/6000 2EDL8113* JI ✓ ✓ ✓
4000/6000 2EDL8114* JI ✓ ✓ ✓
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
242
243
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Industrial and general purpose gate driver ICs
Infineon's gate driver IC solutions are the expert's choice. With more than 500 reliable and eicient gate driver solutions,
we provide a comprehensive portfolio for virtually any application. Addressing various application requirements,
Infineon delivers solutions with an assortment of gate driver topologies, voltage classes, drive capability, features and
package options to optimize performance, minimize size and reduce cost. Some discrete gate driver ICs are also available
in bare die. The table below shows additional gate driver IC features available in the current portfolio.
Infineon's industrial and general purpose gate driver ICs utilize the following technologies:
› (1) Coreless transformer technology (CT)
› (2) Level-shiing silicon-on-insulator technology (SOI)
› (3) Level-shiing junction-isolation technology (JI)
› (4) Non-isolated technology (N-ISO)
Features Abbreviation Benefits
Active Miller clamp M-CLAMP Protection against inadvertent dynamic turn-on because of parasitic Miller eects
Active shutdown SD-ACT
Ensures a safe IGBT o-state in case the output chip is not connected to the power supply or an undervoltage lockout is in eect
Brake chopper BRAKE Integrated brake IGBT driver with protection
Comparator CMP General purpose comparator included
Current sense CS
Senses the motor phase current through an external shunt resistor, converts from analog to digital signal, and transfers the signal to the low side
Dedicated JFET control JFETDRIVE Optimized to drive SiC JFET
Desaturation protection DESAT Protects the IGBT at short circuit
Enable EN Dedicated pin terminates all outputs
Fault reporting FAULT-RPT Indicates an overcurrent or undervoltage shutdown has occurred
Fault reset FAULT-RST Dedicated pin resets the DESAT-FAULT-state of the chip
High-voltage start-up HVSTART Provides easy and fast circuit start-up while enabling low circuit standby losses
Integrated bootstrap diode BSD Integrated bootstrap reduces BOM
Operational amplifier OPAMP An independent op-amp for current measurement or overcurrent detection
Self-oscillating (oscillator) OSC Integrated front end oscillator
Overcurrent protection (ITRIP) OCP Ensures safe application operation in case of overcurrent
Overtemperature shutdown SD-OT Internal overtemperature protection circuit protects the IC against excessive power loss and overheating
Programmable dead time DT-PROG Dead time is programmable with external resistor for flexible design
Programmable fault clear time F LTC The length of the fault clear time period (tF LT C ) is programmed by external capacitor which connected between FLTC and VSS (CFLTC).
Programmable shutdown SD-PROG A shutdown feature has been designed into a pin
Separate pin for logic ground SEP-GND Dedicated pin or logic ground for improved noise immunity
Separate sink/source outputs SEP-OUT Simplifies gate resistor selection, reduces BOM, and improves dV/dt control
Shoot-through protection STP Additional shoot-through protection logic such as interlock
Short-circuit clamping SC-CLAMP During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit
connected to OUT+ limits this voltage to a value slightly higher than the supply voltage.
Shutdown SD Dedicated pin disables the IC outputs
So overcurrent shutdown SD-SOFT Dedicated pin turns o the desaturated transistor, preventing overvoltages
Truly dierential inputs TDI ±70 VDC and ±150 VAC ground-shi robustness of low-side gate driver ICs
Two-level turn-o T LTO Lowers VCE overshoots at turn-o during short circuits or overcurrent events
UL 1577 UL Double galvanic isolation certification
Undervoltage lockout UVLO Ensures safe application operation by avoiding unexpected driver behavior at low voltages
VDE 0884-10 or VDE 0884-11 VDE Reinforced galvanic isolation certifications for non-optical couplers
Infineon gate driver IC technologies
Non-isolated Level-shi Galvanic isolation
Low voltage Junction isolation Silicon on insulator Coreless transformer
›Comprehensive families
of single- and dual-low-side
drivers with flexible output
current, logic configurations,
and UVLOs
›Rugged technology of the high-
voltage gate drivers, and the
state-of-the-art 130-nm process
›20 years proven technology
›Largest portfolio of 200 V, 600 V,
700 V and 1200 V industry stan-
dard gate drivers using rugged
proprietary HVIC process
›Infineon SOI technology
for high-voltage applications
with inherent integrated
bootstrap diode capability
and lower level-shi losses
› Industry best-in-class
robustness against negative
VS transient spikes
›Magnetically-coupled isolation
technology provides galvanic
isolation (functional, basic and
reinforced)
›Strongest gate-drive output
currents (up to 10 A) reducing
need for external booster circuits
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
243
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Product overview
To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to
by application topology.
* Coming soon
1) Please contact sales team for additional information
Half-bridge gate driver ICs
Voltage
class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Comparator
Operational amplifier
Desaturation protection
Enable
Fault reporting
Integrated bootstrap diode
Overcurrent protection
Programmable dead time
Programmable shutdown
Self-oscillating (oscillator)
Separate pin for logic ground
Shoot-through protection
Shutdown
So overcurrent shutdown
DSO-8
DSO-14
DSO-16
DSO-16 WB
DSO-18
DIP-8
DIP-14
SSOP-24
VDSON-8
VQFN-14
CHIP1
Features Package
1200 1500/2500 12.2/11.2 85/85 2ED020I12-FI CT ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2214 JI ✓ ✓ ✓ ✓ ✓ ✓
650
2500/2500
9.1/8.2 200/200
2ED2182S06* SOI ✓ ✓ ✓ ✓
2ED21824S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2183S06* SOI ✓ ✓ ✓ ✓
2ED21834S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2184S06* SOI ✓ ✓ ✓ ✓ ✓
2ED21844S06* SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
290/700
2ED2108S06* SOI ✓ ✓ ✓ ✓
2ED21084S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
2ED2109S06* SOI ✓ ✓ ✓ ✓ ✓
2ED21094S06* SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2ED21091S06* SOI ✓ ✓ ✓ ✓ ✓ ✓
360 / 700 9.1 / 8.3 300/310 2ED2304S06F NEW SOI ✓ ✓ ✓ ✓
1500/2500 12.2/11.2 85/85 2ED020I06-FI CT ✓ ✓ ✓
600
78/169 8.9/8.2 220/220 IR2304 JI ✓ ✓ ✓
8.9/8.2 IR25601 JI ✓ ✓
180/260
9/8
N.A.
IR21531 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR21531D JI ✓ ✓ ✓ ✓ ✓ ✓
9/8 IR25603 JI ✓ ✓ ✓ ✓ ✓ ✓
11/9 IRS2153(1)D JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
200/350 8.9/8.2
200/220
IR2108 JI ✓ ✓ ✓
IR21084 JI ✓ ✓ ✓ ✓ ✓
IR2308 JI ✓ ✓ ✓
IR25606 JI ✓ ✓
200/750
IR2109 JI ✓ ✓ ✓ ✓
IR21091 JI ✓ ✓ ✓ ✓ ✓
IR21094 JI ✓ ✓ ✓ ✓ ✓ ✓
4.1/3.8 IR2302 JI ✓ ✓ ✓ ✓
210/360
8.9/8.2
150/680
IR2103 JI ✓ ✓ ✓
8.9/8.2 IR2104 JI ✓ ✓ ✓ ✓
8.9/8.2 IR25602 JI ✓ ✓ ✓
220/480 8.9/7.7 500/500 IRS2890D NEW JI ✓ ✓ ✓ ✓ ✓
250/500 8.6/8.2 150/750 IR2111 JI ✓ ✓ ✓
290/600
8.9/8.2 150/150 IRS2304 JI ✓ ✓ ✓ ✓
8.9/8.2 150/680 IRS2103 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS2104 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 150/750 IRS2111 JI ✓ ✓ ✓ ✓
8.9/8.2 200/220 IRS2(1,3)08 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21084 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2
200/750
IRS2109 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21091 JI ✓ ✓ ✓ ✓
8.9/8.2 IRS21094 JI ✓ ✓ ✓ ✓ ✓ ✓
360/700 9.1/8.3 300/310 2EDL05N06P SOI ✓ ✓ ✓ ✓
12.5/11.6 400/420 2EDL05I06P SOI ✓ ✓ ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2183 JI ✓ ✓ ✓ ✓
8.9/8.2 IR2183 JI ✓ ✓ ✓
8.9/8.2 IR(S)21834 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2
270/680
IRS2184 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IR2184 JI ✓ ✓ ✓ ✓
8.9/8.2 IR21844 JI ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS21844 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
2000/3000 10.2/9.3 440/440 IR2114 JI ✓ ✓ ✓ ✓ ✓ ✓
2300/2800 9.1/8.3 300/310 2EDL23N06P SOI ✓✓✓✓ ✓✓ ✓
12.5/11.6 400/420 2EDL23I06P SOI ✓✓✓✓ ✓✓ ✓
200 290/600 8.9/8.2 150/160 IRS2007 NEW JI ✓ ✓ ✓
150/680 IRS2008 NEW JI ✓ ✓ ✓ ✓
120
2000/6000
7/6.5 47/47
2EDL8112* JI ✓ ✓ ✓
3000/6000 2EDL8113* JI ✓ ✓ ✓
4000/6000 2EDL8114* JI ✓ ✓ ✓
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
245
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
SRC=Turn on slew rate control
1) Please contact sales team for additional information
Single high-side gate driver ICs
Voltage
class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Active Miller clamp
Dedicated control for JFET
Desaturation protection
Enable
Fault reporting
Fault reset
Overcurrent protection
Separate pin for logic ground
Separate sink/source outputs
So overcurrent shutdown
Two-level turn-o
UL 1577
VDE 0884-10
DSO-8
DSO-8 300mil
DSO-16
DSO-16 WB
DSO-19
DSO-36
DIP-8
SOT23-6
TFLGA-13
CHIP1
Features Package
1200
1300/900 12/11.1 300/300 1EDI05I12A CT ✓ ✓ ✓ ✓
1EDC05I12AH NEW CT ✓ ✓ ✓ ✓
2000/2000 12/11
165/170 1ED020I12-F2 CT ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-B2 CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1750/1750 1ED020I12-FT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-BT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
2200/2300 12/11.1 300/300 1EDI10I12M CT ✓ ✓ ✓ ✓
1EDC10I12M NEW CT ✓ ✓ ✓ ✓
4000/3500
9.1/8.5 120/115 1EDI20N12A CT ✓ ✓ ✓
12/11.1
125/120 1EDI20H12A CT ✓ ✓ ✓
1EDC20H12A NEW CT ✓ ✓ ✓ ✓
300/300
1EDI20I12A CT ✓ ✓ ✓ ✓
1EDC20I12A NEW CT ✓ ✓ ✓ ✓
4400/4100 1EDI20I12M CT ✓ ✓ ✓ ✓
1EDC20I12M NEW CT ✓ ✓ ✓ ✓
4000/4000 16.9/16.4 80/80 1EDI30J12C CT ✓ ✓ ✓
5900/6200
12/11.1 300/300
1EDI30I12M CT ✓ ✓ ✓ ✓
1EDC30I12M NEW CT ✓ ✓ ✓ ✓
7500/6800 1EDI40I12A CT ✓ ✓ ✓ ✓
1EDC40I12A NEW CT ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDI20I12SV NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDU20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓ ✓
SRC/2000 11.9/11 460/460 1EDS20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓✓ ✓
10000/9400 12/11.1
125/120 1EDI60H12A CT ✓ ✓ ✓ ✓
1EDC60H12A NEW CT ✓ ✓ ✓
300/300 1EDI60I12A CT ✓ ✓ ✓ ✓
1EDC60I12A NEW CT ✓ ✓ ✓ ✓
600
160/240 9/8 215/140 IRS25752 JI ✓
250/500
8.6/8.2 105/125 IR2117 JI ✓ ✓ ✓
IR2118 JI ✓ ✓
10.3/9 150/200 IR212(7,8) JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IR21271 JI ✓ ✓ ✓ ✓
290/600
8.6/8.2 105/125 IRS211(7,8) JI ✓ ✓ ✓
10.3/9 150/150 IRS2127 JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IRS21271 JI ✓ ✓ ✓ ✓ ✓
500 1600/3300 9.2/8.3 200/170 IR2125 JI ✓ ✓ ✓ ✓
200 160/240 9/8 215/140 IRS20752 JI ✓
100 IRS10752 JI ✓
650 4000/8000 4.5/5.0 41/37 1EDS5663H NEW CT ✓ ✓ ✓
4000/8000 4.5/5.0 41/37 1EDF5673F NEW CT ✓
250 4000/8000 4.5/5.0 41/37 1EDF5673K NEW CT ✓
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
244
245
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Three-phase gate driver ICs
Voltage
class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Brake chopper
Operaltional amplifier
Desaturation protection
Enable
Fault reporting
Integrated bootstrap diode
Overcurrent protection
Programmable dead time
Separate pin for logic ground
Shoot-through protection
Shutdown
DSO-20 WB
DSO-24
DSO-28 WB
DIP-28
LCC-32
MQFP-64
TSSOP-28
VQFN-28
VQFN-34
CHIP1
Features Package
1200
350/650 11.4/10.4 600/600 6ED2230S12* SOI ✓✓✓✓✓ ✓ ✓
250/500 8.6/8.2 700/750 IR2233 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 IR2235 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
350/540 11.2/10.2 550/550 IR2238 JI ✓✓✓✓✓✓ ✓
600
165/375
11.7/9.8 490/530 6ED003L06-F2 SOI ✓ ✓ ✓ ✓ ✓ ✓
11.7/9.8 6EDL04I06(N,P) SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
9/8.1 530/530 6EDL04N06P SOI ✓ ✓ ✓ ✓ ✓ ✓ ✓
200/350
8.9/8.2
400/425
IR2136 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9 IR21363 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9 IR21365 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 IR21368 JI ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 530/500 IR21364 JI ✓ ✓ ✓ ✓ ✓ ✓
11.1/10.9
530/530
IRS2334 JI ✓ ✓
8.9/8.2 IRS2336 JI ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS2336D JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS23364D JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.9/8.2 IRS23365D JI ✓ ✓ ✓ ✓ ✓ ✓
250/500
9/8.7 425/675 IR213(0,2) JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.7/8.3 600/1300 IR2131 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓
8.6/8.2 700/750 IR2133 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
10.4/9.4 IR2135 JI ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
200 165/375 11.7/9.8 490/530 6ED003L02-F2 SOI ✓ ✓ ✓ ✓ ✓
9/8.1 530/530 6EDL04N02P SOI ✓ ✓ ✓ ✓ ✓ ✓
* Coming soon
1) Please contact sales team for additional information
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
245
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
SRC=Turn on slew rate control
1) Please contact sales team for additional information
Single high-side gate driver ICs
Voltage
class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Active Miller clamp
Dedicated control for JFET
Desaturation protection
Enable
Fault reporting
Fault reset
Overcurrent protection
Separate pin for logic ground
Separate sink/source outputs
So overcurrent shutdown
Two-level turn-o
UL 1577
VDE 0884-10
DSO-8
DSO-8 300mil
DSO-16
DSO-16 WB
DSO-19
DSO-36
DIP-8
SOT23-6
TFLGA-13
CHIP1
Features Package
1200
1300/900 12/11.1 300/300 1EDI05I12A CT ✓ ✓ ✓ ✓
1EDC05I12AH NEW CT ✓ ✓ ✓ ✓
2000/2000 12/11
165/170 1ED020I12-F2 CT ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-B2 CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
1750/1750 1ED020I12-FT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓
1ED020I12-BT CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
2200/2300 12/11.1 300/300 1EDI10I12M CT ✓ ✓ ✓ ✓
1EDC10I12M NEW CT ✓ ✓ ✓ ✓
4000/3500
9.1/8.5 120/115 1EDI20N12A CT ✓ ✓ ✓
12/11.1
125/120 1EDI20H12A CT ✓ ✓ ✓
1EDC20H12A NEW CT ✓ ✓ ✓ ✓
300/300
1EDI20I12A CT ✓ ✓ ✓ ✓
1EDC20I12A NEW CT ✓ ✓ ✓ ✓
4400/4100 1EDI20I12M CT ✓ ✓ ✓ ✓
1EDC20I12M NEW CT ✓ ✓ ✓ ✓
4000/4000 16.9/16.4 80/80 1EDI30J12C CT ✓ ✓ ✓
5900/6200
12/11.1 300/300
1EDI30I12M CT ✓ ✓ ✓ ✓
1EDC30I12M NEW CT ✓ ✓ ✓ ✓
7500/6800 1EDI40I12A CT ✓ ✓ ✓ ✓
1EDC40I12A NEW CT ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDI20I12SV NEW CT ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
SRC/2000 11.9/11 460/460 1EDU20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓ ✓
SRC/2000 11.9/11 460/460 1EDS20I12SV NEW CT ✓✓✓ ✓✓ ✓✓✓✓ ✓
10000/9400 12/11.1
125/120 1EDI60H12A CT ✓ ✓ ✓ ✓
1EDC60H12A NEW CT ✓ ✓ ✓
300/300 1EDI60I12A CT ✓ ✓ ✓ ✓
1EDC60I12A NEW CT ✓ ✓ ✓ ✓
600
160/240 9/8 215/140 IRS25752 JI ✓
250/500
8.6/8.2 105/125 IR2117 JI ✓ ✓ ✓
IR2118 JI ✓ ✓
10.3/9 150/200 IR212(7,8) JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IR21271 JI ✓ ✓ ✓ ✓
290/600
8.6/8.2 105/125 IRS211(7,8) JI ✓ ✓ ✓
10.3/9 150/150 IRS2127 JI ✓ ✓ ✓ ✓ ✓
7.2/6.8 IRS21271 JI ✓ ✓ ✓ ✓ ✓
500 1600/3300 9.2/8.3 200/170 IR2125 JI ✓ ✓ ✓ ✓
200 160/240 9/8 215/140 IRS20752 JI ✓
100 IRS10752 JI ✓
650 4000/8000 4.5/5.0 41/37 1EDS5663H NEW CT ✓ ✓ ✓
4000/8000 4.5/5.0 41/37 1EDF5673F NEW CT ✓
250 4000/8000 4.5/5.0 41/37 1EDF5673K NEW CT ✓
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
247
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
High-side and low-side gate driver ICs
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Integrated bootstrap diode
Separate pin for logic ground
Shutdown
DSO-8
DSO-14
DSO-16 WB
DIP-8
DIP-14
VQFN-14
CHIP1
Features Package
1200 2000/2500 10.2/9.3 225/280 IR2213 JI ✓ ✓ ✓ ✓ ✓
650
290/700
9.1/8.2 200/200
2ED2106S06* SOI ✓ ✓ ✓
2ED21064S06* SOI ✓ ✓ ✓
2500/2500 2ED2181S06* SOI ✓ ✓ ✓
2ED21814S06* SOI ✓ ✓ ✓
600
200/350
8.9/8.2
200/220
IR2106 JI ✓ ✓
8.9/8.2 IR21064 JI ✓ ✓ ✓
4.1/3.8 IR2301 JI ✓ ✓
8.9/8.2 IR25604 JI ✓
4.1/3.8 IRS2301 JI ✓
210/360 8.9/8.2 150/160 IR2101 JI ✓✓✓
IR2102 JI ✓ ✓
250/500 8.6/8.2 105/125 IR2112 JI ✓ ✓ ✓
290/600
8.6/8.2 130/135 IRS2112 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 150/160 IRS2101 JI ✓✓✓
8.9/8.2 200/220 IRS2106 JI ✓✓✓
8.9/8.2 IRS21064 JI ✓ ✓ ✓
360/700 12.5/11.6 400/420 2EDL05I06BF SOI ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2181 JI ✓✓✓
8.9/8.2 IR2181 JI ✓ ✓
8.9/8.2 IR21814 JI ✓ ✓ ✓
8.9/8.2 IRS21814 JI ✓ ✓ ✓ ✓
2500/2500
8.6/8.2 94/120 IR2113 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 IR25607 JI ✓ ✓ ✓
8.5/8.2 120/130 IRS2113 JI ✓ ✓ ✓ ✓ ✓ ✓
4000/4000
8.9/8.2
170/170
IRS2186 JI ✓✓✓
8.9/8.2 IRS21864 JI ✓ ✓ ✓
6/5.5 IRS21867 JI ✓
500 2500/2500 8.6/8.2 94/120 IR2110 JI ✓ ✓ ✓ ✓
8.5/8.2 120/130 IRS2110 JI ✓ ✓ ✓ ✓ ✓
200
290/600 8.9/8.2 150/160 IRS2005 NEW JI ✓ ✓
1000/1000 9/8.2 60/60 IRS2011 JI ✓✓✓
9/8.2 75/80 IR2011 JI ✓ ✓
3000/3000 8.6/8.2 65/95 IR2010 JI ✓ ✓ ✓ ✓
* Coming soon
1) Please contact sales team for additional information
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
246
247
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Dual high-side/half-bridge
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Active Miller clamp
Deadtime control
Desaturation protection
Disable
Fault reporting
Fault reset
Separate pin for logic ground
UL 1577
VDE 0884-10
DSO-16
DSO-16 WB
DSO-36 (w/o 4 pins)
TFLGA-13
Features Package
1200 2000/2000 12/11 165/170 2ED020I12-F2 CT ✓ ✓ ✓ ✓ ✓ ✓
650
4000/8000 4.2/3.9
37 / 37
2EDF7275F NEW CT ✓ ✓
1000/2000 2EDF7175F NEW CT ✓ ✓
4000/8000 8/7 2EDS8265H NEW CT ✓ ✓ ✓ ✓
1000/2000 2EDS8165H NEW CT ✓ ✓ ✓ ✓
250 4000/8000 4.2/3.9 2EDF7235K NEW CT ✓ ✓
2EDF7275K NEW CT ✓ ✓ ✓
Single low-side gate driver ICs
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Automatic minimum on time protection
Enable
Fault reporting
Overcurrent protection
Programmable fault clear time
Programmable minimum on time
Separate sink/source outputs
Synchronous rectification
Truly dierential inputs
DSO-8
DIP-8
SOT23-5
SOT23-6
WSON-6
Features Package
200
1000/4000 10.55/9 50/60 IR11662 N-ISO ✓ ✓ ✓ ✓ ✓
2000/7000 10.55/9 50/60 IR11672A N-ISO ✓ ✓ ✓ ✓ ✓
1000/2500 4.5/4.4 50/50 IR1161 N-ISO ✓ ✓ ✓ ✓
80 4000/8000 4.2/3.9 45 / 45 1EDN7550 NEW N-ISO ✓ ✓
8/7 45 / 45 1EDN8550 NEW N-ISO ✓ ✓
25 800/1750 11.9/11.4 50/50 1ED44176N01F NEW N-ISO ✓✓✓✓ ✓
1500/1500 10.2/9.2 50/50 IRS44273 N-ISO ✓
20
300/550 5/4.15 50/50 IR44252 N-ISO ✓
1700/1500 5/4.15 50/50 IR44272 N-ISO ✓ ✓
5/4.15 IR44273 N-ISO ✓
4000/8000
4.2/3.9
19/19
1EDN7511 N-ISO ✓
8/7 1EDN8511 N-ISO ✓
4.2/3.9 1EDN7512 N-ISO ✓ ✓
5 1600/3300 8.9/8 200/150 IR2121 N-ISO ✓ ✓ ✓
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
247
Gate driver ICs portfolio
www.infineon.com/gatedriver
www.infineon.com/gdfinder
High-side and low-side gate driver ICs
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Integrated bootstrap diode
Separate pin for logic ground
Shutdown
DSO-8
DSO-14
DSO-16 WB
DIP-8
DIP-14
VQFN-14
CHIP1
Features Package
1200 2000/2500 10.2/9.3 225/280 IR2213 JI ✓ ✓ ✓ ✓ ✓
650
290/700
9.1/8.2 200/200
2ED2106S06* SOI ✓ ✓ ✓
2ED21064S06* SOI ✓ ✓ ✓
2500/2500 2ED2181S06* SOI ✓ ✓ ✓
2ED21814S06* SOI ✓ ✓ ✓
600
200/350
8.9/8.2
200/220
IR2106 JI ✓ ✓
8.9/8.2 IR21064 JI ✓ ✓ ✓
4.1/3.8 IR2301 JI ✓ ✓
8.9/8.2 IR25604 JI ✓
4.1/3.8 IRS2301 JI ✓
210/360 8.9/8.2 150/160 IR2101 JI ✓✓✓
IR2102 JI ✓ ✓
250/500 8.6/8.2 105/125 IR2112 JI ✓ ✓ ✓
290/600
8.6/8.2 130/135 IRS2112 JI ✓ ✓ ✓ ✓ ✓
8.9/8.2 150/160 IRS2101 JI ✓✓✓
8.9/8.2 200/220 IRS2106 JI ✓✓✓
8.9/8.2 IRS21064 JI ✓ ✓ ✓
360/700 12.5/11.6 400/420 2EDL05I06BF SOI ✓ ✓
1900/2300
8.9/8.2
220/180
IRS2181 JI ✓✓✓
8.9/8.2 IR2181 JI ✓ ✓
8.9/8.2 IR21814 JI ✓ ✓ ✓
8.9/8.2 IRS21814 JI ✓ ✓ ✓ ✓
2500/2500
8.6/8.2 94/120 IR2113 JI ✓ ✓ ✓ ✓ ✓
8.6/8.2 IR25607 JI ✓ ✓ ✓
8.5/8.2 120/130 IRS2113 JI ✓ ✓ ✓ ✓ ✓ ✓
4000/4000
8.9/8.2
170/170
IRS2186 JI ✓✓✓
8.9/8.2 IRS21864 JI ✓ ✓ ✓
6/5.5 IRS21867 JI ✓
500 2500/2500 8.6/8.2 94/120 IR2110 JI ✓ ✓ ✓ ✓
8.5/8.2 120/130 IRS2110 JI ✓ ✓ ✓ ✓ ✓
200
290/600 8.9/8.2 150/160 IRS2005 NEW JI ✓ ✓
1000/1000 9/8.2 60/60 IRS2011 JI ✓✓✓
9/8.2 75/80 IR2011 JI ✓ ✓
3000/3000 8.6/8.2 65/95 IR2010 JI ✓ ✓ ✓ ✓
* Coming soon
1) Please contact sales team for additional information
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
249
Gate driver ICs portfolio
Complementary: current sense ICs
Voltage class [V] Base PN
Technology
Current sense
Overcurrent protection
DSO-8
DSO-16 WB
DIP-8
SOT23-5
Features Package
600 IR2175 JI ✓ ✓ ✓ ✓
IR25750 JI ✓ ✓
Complementary: high-voltage start-up IC
Voltage class [V] Base PN
Technology
Enable
High voltage start-up
Overtemperature shutdown
SOT23-5
Features Package
480 IRS25751 N-ISO ✓ ✓ ✓ ✓
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
248
249
Gate driver ICs portfolio
Full bridge gate driver ICs
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Overcurrent protection
Programmable dead time
Self-oscillating (oscillator)
PG-DSO-16
Features Package
100 1200/1200 7.25/6.8 40/60 IR2086S JI ✓ ✓ ✓ ✓
Dual low-side gate driver ICs
Voltage class
[V]
IO+/IO-
typ.
[mA]
UVLO on/o
typ.
[V]
Prop delay
o/on typ.
[ns]
Base PN
Technology
Automatic minimum on time protection
Enable
Programmable minimum on time
Synchronous rectification
DSO-8
DIP-8
WSON-8
TSSOP-8
Features Package
200
1000/4000 8.1/7.6 70/60 IR1168 N-ISO ✓ ✓ ✓
1000/4000 8.1/7.6 80/100 IR11682 N-ISO ✓ ✓ ✓
1000/4000 4.55/4.35 60/250 IR11688 N-ISO ✓ ✓ ✓ ✓
25 2300/3300
10.2/9.2
50/50
IRS44262 N-ISO ✓
N.A.
IRS4426 N-ISO ✓
IRS4427 N-ISO ✓ ✓
65/85 IR25600 N-ISO ✓ ✓
IR442(6,7) N-ISO ✓ ✓
20 5000/5000 4.2/3.9 19/19 2EDN752(3,4) N-ISO ✓ ✓ ✓ ✓
8/7 2EDN852(3,4) N-ISO ✓✓✓
4000/4000 4.2/3.9 19/19 2EDN7424 N-ISO ✓✓✓
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
249
Gate driver ICs portfolio
Complementary: current sense ICs
Voltage class [V] Base PN
Technology
Current sense
Overcurrent protection
DSO-8
DSO-16 WB
DIP-8
SOT23-5
Features Package
600 IR2175 JI ✓ ✓ ✓ ✓
IR25750 JI ✓ ✓
Complementary: high-voltage start-up IC
Voltage class [V] Base PN
Technology
Enable
High voltage start-up
Overtemperature shutdown
SOT23-5
Features Package
480 IRS25751 N-ISO ✓ ✓ ✓ ✓
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Further information, datasheets and documents
www.infineon.com/gatedriver
www.infineon.com/gdapplication
www.infineon.com/gdiso
www.infineon.com/ifxdesigner
www.infineon.com/crs
www.infineon.com/eicedriver
www.infineon.com/1edn
www.infineon.com/2edn
www.infineon.com/gdbrochure
www.infineon.com/gdfinder
www.infineon.com/SiC-GD
www.infineon.com/TDI
www.infineon.com/200vhvic
www.infineon.com/1EDcompact
www.infineon.com/700vhvic
www.infineon.com/microhvic
www.infineon.com/gan-eicedriver
www.infineon.com/2edi
Videos
www.infineon.com/gdvideointro
www.infineon.com/gdvideo1EDN
www.infineon.com/gdvideo2EDL
www.infineon.com/mediacenter
Infineon support for gate driver ICs
Useful links and helpful information
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Gate driver ICs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
250
Gate driver ICs support
www.infineon.com/gatedriver
www.infineon.com/gdfinder
Gate driver selection tool
To simplify the gate driver selection process, Infineon oers an online easy-to-use gate driver selection tool.
By selecting a few key parameters, the tool quickly guides you in finding the right driver for your application.
Scan to find the right driver
Access the gate driver selection tool at
www.infineon.com/gdfinder
For recommended gate drivers by application, visit www.infineon.com/gdapplication to download the
PDF version of the gate driver application matrix.
Home
Appliances
General Air Conditioner
(Residential)
Commercial
Lighting
Electric Tools
(Battery)
Hood Fan/
Ceiling Fan/
Freezer Fan
Power Tools
(AC)
Refrigerator/
Washer/
Dryer
Vacuum
Cleaner
PFC
IRS4427S
IRS44273L
2EDN8524F
IRS44273L
2EDN8524F
1EDN8511B
IRS4427S
IRS44273L
2EDN8524F
SMPS ICE5QR4770AZ
(CoolSET™)
2EDN8524F
IRS4427S
IRS2153(1)D
DC-DC 1EDI20N12AF
Inverter
(<1 kW)
6EDL04I06PT
IR2136S
IRS2890DS
2ED2304S06F
6EDL04N02PR
IRS2007S
IRS2301S
6EDL04I06PT
IR2136S
2ED2304S06F
6EDL04I06PT
IR2136S
2EDL05I06PF
6EDL04I06PT
IRS2890DS
2ED2304S06F
Inverter
(<3 kW)
IR2235
2EDL23I06PJ
IR2214SS
SR Motor
Inverter
2EDL05I06PF
IRS2181(4)
IRS2890DS
Half-bridge
Topology
2EDL05N06PF
2ED2304S06F
IRS2153(1)D
HS-Buck
IRS2117
IRS25752L
IRS20752L
Sync-Buck 2EDL05N06PF
2ED2304S06F
Recommended Gate Drivers
Home Appliances
Discover the next level of power and eiciency
Infineon’s gate driver ICs utilize level-shi silicon-on-insulator technology (SOI), and level-shi junction isolation
technology (JI) to meet the high performance requirements in home appliance applications.
Charger
Mobility &
Battery Driven
Drones/ E-Bike/
E-Scooter
EV Charger/
Battery Charger
General Traction Light Electric
Vehicle (LEV)
Lawn Mower/ Vacuum/
Service Robotics
Inverter
6EDL04N02PR
IRS2334
IRS2007S
IRS2186S
1EDI60I12AF
IR2214SS
IR2213
6EDL04N02PR
IR2136S
2EDL05N06PF
IRS2183
6EDL04N02PR
DC-DC
1EDI20I12AF
1EDI40I12AF
IR2214SS
PFC
IRS4427S
IRS44273L
2EDN7524F
HB (LLC) 1EDI60I12AF
1EDU20I12SV
Sync-Buck IR2010S
BLDC
6EDL04N02PR
IR2136S
IRS2007S
Recommended Gate Drivers
Mobility & Battery Driven
Full range of best-in-class components
From EV charger and light electric vehicle (LEV) to service robotics and drones, Infineon’s family of configurable
half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide the
required power and eiciency. Automotive-specific gate drivers qualified according to AEC-Q100 are also available.
For battery-driven applications, saving battery power is the key. Infineon oers an excellent selection of gate
driver ICs providing thehighest-possible energy eiciency and top precision.
Charger
Industrial Air Conditioner
(Commercial)
Automatic Door
Opening Systems
Building Fans &
Pumps
Commercial
Sewing Machine
Drives Forkli Truck/
CAV
UPS
Compressor/
Fan/CAC
1ED020I12-F2
1EDI10I12MF
2ED020I12-F2
Inverter
(<5 kW)
6EDL04I06PT
IR2136S
IRS2103
6EDL04(I,N)06PT
2EDL23I06PJ
IR2214SS
6EDL04I06PT
IR2136S
IRS2334
6EDL04I06PT
IR2133
2EDL23I06PJ
1EDI60I12AF
2EDL23I06PJ
IR7106S
Inverter
(<30 kW)
1EDI30I12MF
1EDI60I12AF
1EDU20I12SV
1EDI40I12AF
1ED020I12-BT
2ED020I12-FI
1EDI60N12AF
2EDL23I06PJ
IRS2127(1)
Inverter
(<200 kW)
1EDI60I12AF
1ED020I12-B2
1EDU20I12SV
1EDU20I12SV
1ED020I12-B2
1EDI60I12AF
1EDI60I12AF
1ED020I12-F2
1EDU20I12SV
PFC
IRS4427S
IRS44273L
2EDN8524F
IRS4427S
IRS44273L
2EDN8524F
DC-DC
(1 kW - 100 kW)
2EDL05N06PJ
2EDL23N06PJ
1EDI20N12AF
1EDI60N12AF
SMPS
2EDN8524F
IR7106S
IRS2186(4)
IRS4427S
IRS44273L
2EDN7524F
Brake Chopper
1EDI05I12AF
1EDI10I12MF
IRS44273L
Active Bridge
Rectifier
2ED020I12-F2
1ED020I12-F2
1ED020I12-FT
Recommended Gate Drivers
Industrial
Reliable, high quality solutions for the most rugged situations
Infineon’s gate driver ICs are the expert’s choice. With the breadth and depth of the portfolio, customers can quickly
design and build eicient and robust systems for every industrial application.
Automatic
opening system
Renewable Energy Heat Pump Solar Inverter
Inverter (<2 kW)
6EDL04I06PT
IR2136S
2ED2304S06F
Inverter (>2 kW)
IR2214SS
IR2213
IR2235
1EDI20I12AF
µInverter Boost
IRS4427S
2EDN7524F
IRS44273L
µInverter DC-AC
2ED2304S06F
IR2114SS
2EDL05N06PJ
String Boost
2EDN8524F
IRS4427S
1EDI20N12AF
String Inverter
1ED020I12-F2
IR7106S
1EDI60N12AF
Central Boost/SMPS 2EDN8524F
1EDI60I12AF
Central Inverter
1EDI60I12AF
1ED020I12-F2
IR2214SS
Recommended Gate Drivers
Renewable Energy
Powering an energy-smart world
Improving eiciency is the number one objective in the field of photovoltaics. Eiciency gains of as little as one percent
can still yield enormous returns in renewable energy segment.
Infineon provides a comprehensive portfolio of high-performance gate driver ICs for photovoltaic inverters. By combining
EiceDRIVER™ with super-junction MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiC™,
as well as IGBT and SiC modules, Infineon enables solutions that maximizing uptime and energy production.
Further information, datasheets and documents
www.infineon.com/gatedriver
www.infineon.com/gdapplication
www.infineon.com/gdiso
www.infineon.com/ifxdesigner
www.infineon.com/crs
www.infineon.com/eicedriver
www.infineon.com/1edn
www.infineon.com/2edn
www.infineon.com/gdbrochure
www.infineon.com/gdfinder
www.infineon.com/SiC-GD
www.infineon.com/TDI
www.infineon.com/200vhvic
www.infineon.com/1EDcompact
www.infineon.com/700vhvic
www.infineon.com/microhvic
www.infineon.com/gan-eicedriver
www.infineon.com/2edi
Videos
www.infineon.com/gdvideointro
www.infineon.com/gdvideo1EDN
www.infineon.com/gdvideo2EDL
www.infineon.com/mediacenter
Infineon support for gate driver ICs
Useful links and helpful information
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Gate driver ICs support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
253
Wide range of power boards
M1
EVAL-M1-36-84A
CIPOS™ Nano-power board
IRSM836-084MA ~110 V/80 W
EVAL-M1-05F310
CIPOS™ Nano-power board
IRSM005-310MH -100 V/300 W
EVAL-M1-IM818-A
CIPOS™-Maxi power board
IM818-MCC -1200 V/2600 W
iMOTION™ Modular Application Design Kit
Infineon‘s motor control evaluation platform
The iMOTION™ modular application design kit (MADK) evaluation platform covers motor drive applications up to 2 kW.
The platform oers a modular and scalable system solution with dierent control board options and a wide range of
power boards. While the M1 platform provides control of a permanent magnet synchronous motor (PMSM), the M3
platform also integrates the power factor correction (PFC) implemented as a boost or totem pole PFC.
Using the iMOTION™ MADK standardized platform interface, dierent control and power boards can be combined in
a system that perfectly matches the requirements of the application. This modular approach allows developers the
maximum flexibility and scalability during evaluation and development phase at aordable cost.
Get a motor running in less than an hour!
www.infineon.com/iMOTION
www.infineon.com/MADK
iMOTION™ MADK
Motor control boards
M1
EVAL-M1-101T
IMC101T-T038
Control card
EVAL-M1-099M
IRMCK099
Control card
EVAL-M1-183
IRMCF183
Control card
EVAL-M1-101TH
IMC101T-F048
Control card
Motor + PFC control boards
M3
EVAL-M3-102T
IMC102T-F064
Control card
EVAL-M3-302
IMC302A-F064
Control card
Power boards with PFC
M3
EVAL-M3-CM615PN
CIPOS™ mini with boost PFC
IFCM15S60GD ~220 V/800 W
EVAL-M3-CM615TN
CIPOS™ mini with totem pole PFC
IKCM15H60GA ~220 V/800 W
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
252
253
iMOTION™
iMOTION™
Flexible and scalable platform for motor control solutions
iMOTION™ products are highly integrated devices used to control variable speed drives. By integrating both the required
hardware and algorithms to perform control of permanent magnet synchronous motors (PMSM), they provide the
shortest time to market for inverterized motor systems at the lowest system and development cost.
Key features
› Ready-to-use and field-proven motor control solution
› Various integration levels - from motor controller to SmartIPM
› Multiple integrated protection features
› Functional safety acc. IEC/UL 60335-1 supported
Key benefits
› Easy to use – no motor control coding required
› High performance and energy optimized solution
› Reduced cost of ownership due to R&D and BOM savings
› Fastest time to market
MCEWizard
SW tool to generate initial drive
control parameters
MCEDesigner
SW tool to test, monitor and fine-tune
the motor drive – including trace features
for live monitoring the drive status
iMOTION™ Link
Isolated debug interface to
iMOTION™ devices
iMOTION™ MADK Platform
Modular and scalable application
kit platform for variable
speed drives
Tools and soware
Get the necessary soware here:
iMOTION™ ecosystem
PC tools and evaluation kits available to configure, test and fine-tune
the drive inverter.
www.infineon.com/iMOTION
www.infineon.com/iMOTION-soware
Our markets
› Air conditioners
› Home appliances
› Fans
› Pumps
› Cooling compressors
› Motor control
M
Motion Control Engine (MCE)
built-in sinusoidal FOC algorithm
IMC100T
iMOTION™ Controller iMOTION™ SmartIPM
MCE + additional MCU
Cortex-M0 core available for
system/application code
IMC300A
Full inverter system
very compact PQFN 12x12 mm2 package
up to ~80 W
IMM100A/IMM100T
Gate driver
iMOTION™ 3-phase inverter
ARM®
Cortex®-M0
(optional)
› MCE supervision
› Sensors
› Communication
› Custom functions
› Motor control
› PFC control
› Protection
› Safety functions
› Scripting
Motion Control
Engine
(MCE)
iMOTION™
M
Gate driver 3-phase inverter
› Motor control
› PFC control
› Protection
› Safety function
› Scripting
› Communication
Motion Control
Engine
(MCE)
iMOTION™ product oering
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
253
Wide range of power boards
M1
EVAL-M1-36-84A
CIPOS™ Nano-power board
IRSM836-084MA ~110 V/80 W
EVAL-M1-05F310
CIPOS™ Nano-power board
IRSM005-310MH -100 V/300 W
EVAL-M1-IM818-A
CIPOS™-Maxi power board
IM818-MCC -1200 V/2600 W
iMOTION™ Modular Application Design Kit
Infineon‘s motor control evaluation platform
The iMOTION™ modular application design kit (MADK) evaluation platform covers motor drive applications up to 2 kW.
The platform oers a modular and scalable system solution with dierent control board options and a wide range of
power boards. While the M1 platform provides control of a permanent magnet synchronous motor (PMSM), the M3
platform also integrates the power factor correction (PFC) implemented as a boost or totem pole PFC.
Using the iMOTION™ MADK standardized platform interface, dierent control and power boards can be combined in
a system that perfectly matches the requirements of the application. This modular approach allows developers the
maximum flexibility and scalability during evaluation and development phase at aordable cost.
Get a motor running in less than an hour!
www.infineon.com/iMOTION
www.infineon.com/MADK
iMOTION™ MADK
Motor control boards
M1
EVAL-M1-101T
IMC101T-T038
Control card
EVAL-M1-099M
IRMCK099
Control card
EVAL-M1-183
IRMCF183
Control card
EVAL-M1-101TH
IMC101T-F048
Control card
Motor + PFC control boards
M3
EVAL-M3-102T
IMC102T-F064
Control card
EVAL-M3-302
IMC302A-F064
Control card
Power boards with PFC
M3
EVAL-M3-CM615PN
CIPOS™ mini with boost PFC
IFCM15S60GD ~220 V/800 W
EVAL-M3-CM615TN
CIPOS™ mini with totem pole PFC
IKCM15H60GA ~220 V/800 W
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
255
XMC™ ecosystem, enablement and partners
Infineon enablement for XMC™ MCUs
› DAVE™ – www.infineon.com/dave
Professional and free-of-charge development platform
› XMC™ library for Embedded Coder® – www.infineon.com/matlab
Model-based design from MATLAB® and Simulink® environment,
download free of charge
› IEC60730 class B library for XMC™ – www.infineon.com/iec60730
Available for XMC™ industrial microcontrollers free of charge
› Microcontroller/Probe™ XMC™ – www.infineon.com/ucprobexmc
Free-of-charge version of microcontroller/Probe™ for XMC™ MCUs
to build user interfaces for visualizing, observing, and control of the
internals of XMC™ MCUs
› XMC™ link – www.infineon.com/xmclink
Functional isolated debug probe, based on SEGGER J-Link technology
In addition to a rich third party ecosystem and enablement
landscape, which support the entire development cycle from
evaluation to production.
For more www.infineon.com/xmc-ecosystem
From evaluation to production
Third parties
Hand-in-hand with third party tools
DAVE™ Apps
Graphical-
configurable
application-
oriented
soware
components
XMC™ Lib
Low-level
driver library/
APIs for
peripherals
Ide
aP
roduct
DAVE™
Professional free-of-charge IDE
XMC™ 32-bit industrial microcontroller portfolio
Examples
XMC™ Lib and
DAVE™ Apps
composed to
create more
complex
applications
DAVE™ SDK
Modify, enhance, and
develop DAVE™ Apps
A comprehensive set of tools, products, components, and services are available for fast and eicient design with
XMC™ microcontrollers.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
254
255
XMC™ microcontrollers
XMC™
One microcontroller platform – countless solutions
Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for eiciency and demanding industrial applications.
XMC™ MCU portfolio
› RAM: 8 kB up to 352 kB
› Flash: 16 kB up to 2 MB
› Accurate analog mixed-signal
peripherals
› Fast timer/PMW peripherals
› Rich communication interfaces
› 16-pin to 196-pin count packages
XMC1000 family
› ARM® Cortex®-M0 up to 48 MHz
› Peripherals up to 96 MHz
› One-time event request unit (ERU)
› VDD: 1.8 to 5.5 V
› TAmbient: -40°C to 105°C
XMC4000 family
› ARM® Cortex®-M4 up to 144 MHz
› Built-in DSP, SFPU
› Peripherals up to 144 MHz
› Event request unit (ERU)
› TAmbient: -40°C to 125°C
www.infineon.com/xmc
XMC1000
ARM® Cortex®-M0
up to 48 MHz core/
96 MHz peripheral
8-200 KB flash
up to 105°C
1.8-5.5 V
XMC4000
ARM® Cortex®-M4F
up to 144 MHz core
64 kB-2 MB Flash
up to 125°C
XMC1100
Basic control and
connectivity
TSSOP-16/38
VQFN-24/40
XMC4100
Basic control and
connectivity
VQFN-48
LQFP-64
XMC™ entry
XMC1200, XMC1300
Flicker-free,
4-Ch LED, SMPS,
connectivity
TSSOP-16/28/38
VQFN-24, -40
XMC1400
Flicker-free,
4-Ch LED, SMPS,
connectivity
VQFN-40/64
LQFP-64
LED lighting
XMC1300
SMPS control,
connectivity,
TSSOP-16/38
VQFN-24/40
XMC1400
SMPS control,
connectivity
VQFN-40/64
LQFP-64
XMC4200
Server power
150 ps HRPWM
LQFP-64/100
Digital power
XMC1300
Hall and encoder I/F,
MATH co-processor,
TSSOP-16/38
VQFN-24/40
XMC1400
Hall and encoder I/F,
MATH co-processor,
CAN
VQFN-40/64
LQFP-64
XMC4100/XMC4400
Industrial drives,
Hall and encoder I/F,
ΔΣ demodulator,
LQFP-64/100/144
LFBGA-144
XMC4700/4800
Industrial drives,
Hall and encoder I/F,
ΔΣ demodulator,
LQFP-100/144
LFBGA-196
Motor control
XMC1400
Multi CAN - 2 nodes
VQFN-48/64
LQFP-64
XMC4500
MultiCAN - 3 nodes,
Ethernet, +drives
ext. memory, SD/MMC
LQFP-100/144
LFBGA-144
XMC4800, XMC4300
EtherCAT, +drives
MultiCAN - 6 nodes
LQFP-100/144
LFGBGA-196
Industrial I/O
XMC1000
ARM® Cortex®-M0
CPU up to 48 MHz
Flash: 8–200 kB
Package: 16–64 pins
XMC4000
ARM® Cortex®-M4F
CPU up to 144 MHz
Flash: 64 kB–2 MB
Package: 48–196 pins
AURIX™ TC2x1)
TriCore™
Up to 3x multicore
CPU up to 300 MHz
Flash: 0.5–8 MB
Package: 80–516 pins
AURIX™ TC3x1)
TriCore™
Up to 6x multicore
CPU up to 300 MHz
Flash: 1–16 MB
Package: 100–516 pins
AURIX™ 2nd generation
AURIX™ 1st generation
XMC4000
XMC1000
1) AURIX™ devices add safety and CAN FD
XMC1000
XMC4000
AURIX™
1st generation
AURIX™
2nd generation
Integration
Performance
Consumer and industrial
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
255
XMC™ ecosystem, enablement and partners
Infineon enablement for XMC™ MCUs
› DAVE™ – www.infineon.com/dave
Professional and free-of-charge development platform
› XMC™ library for Embedded Coder® – www.infineon.com/matlab
Model-based design from MATLAB® and Simulink® environment,
download free of charge
› IEC60730 class B library for XMC™ – www.infineon.com/iec60730
Available for XMC™ industrial microcontrollers free of charge
› Microcontroller/Probe™ XMC™ – www.infineon.com/ucprobexmc
Free-of-charge version of microcontroller/Probe™ for XMC™ MCUs
to build user interfaces for visualizing, observing, and control of the
internals of XMC™ MCUs
› XMC™ link – www.infineon.com/xmclink
Functional isolated debug probe, based on SEGGER J-Link technology
In addition to a rich third party ecosystem and enablement
landscape, which support the entire development cycle from
evaluation to production.
For more www.infineon.com/xmc-ecosystem
From evaluation to production
Third parties
Hand-in-hand with third party tools
DAVE™ Apps
Graphical-
configurable
application-
oriented
soware
components
XMC™ Lib
Low-level
driver library/
APIs for
peripherals
Ide
aP
roduct
DAVE™
Professional free-of-charge IDE
XMC™ 32-bit industrial microcontroller portfolio
Examples
XMC™ Lib and
DAVE™ Apps
composed to
create more
complex
applications
DAVE™ SDK
Modify, enhance, and
develop DAVE™ Apps
A comprehensive set of tools, products, components, and services are available for fast and eicient design with
XMC™ microcontrollers.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
257
XMC™ digital power explorer kit
The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps
into digital power control with XMC™ microcontrollers. It showcases both XMC™ families Cortex®-M microcontrollers:
XMC4000 and XMC1000, 30V dual N-channel OptiMOS™ MOSFETs and IRS2011S gate drivers. The kit includes two dierent
control card options, XMC1300 control card (ARM® Cortex®-M0) and XMC4200 control card (ARM® Cortex®-M4F), which allow
designers to evaluate both XMC™ microcontroller families and make the right price/performance choice for their application.
Key features
› Synchronous buck converter evaluation kit controlled
with XMC4200 or XMC1300 ARM® Cortex®-M MCUs
› Onboard resistive load banks
› Featuring BSC0924NDI dual N-channel OptiMOS™
and IRS2011S high- and low-side gate driver
› Dierent control schemes possible
– Voltage mode control
– Peak current mode control (with slope compensation)
Customer benefits
› Easy entry in digital power control applications
› Understand the details of voltage/peak current
control and how to extract the maximum of XMC™ devices
› DAVE™ v4 APPs for buck converter and many
more examples
XMC™ digital power explorer kit
Specification Infineon components
Vin 12 VDC MCU XMC4200 or XMC1300
Vout_nom 3.3 VDC MOSFETs OptiMOS™
BSC0924NDI
Iout 2 A MOSFET half-bridge driver IRS2011S
Pout 6 W
www.infineon.com/xmc
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
256
257
XMC™ microcontrollers
Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for system cost and eiciency for demanding
industrial applications. It comes with the most advanced peripheral set in the industry. Fast and largely autonomous
peripherals can be configured to support individual needs.
Highlights include analog mixed-signal, timer/PWM and communication peripherals powered by either an ARM®
Cortex®-M0 core (XMC1000 family) or a Cortex®-M4 core with a floating point unit (XMC4000 family).
Memory Analog Timer/PWM Connectivity Package
ARM®
Cortex®-M0
Frequency [MHz]
ADC1 2-bit/S&H
Number of channels
DAC1 2-bit
CCU4 (4 ch)
CCU8 (4 ch)
HRPWM (150 ps)
POSIF
∑ Demodulator
US IC
CAN 2.0B
USB
Ethernet
EtherCAT®
XMC41x 80 Flash 64-128 kB 2/2 Up to 9 2 ch 2x 1x 1x 1x - 4x Up to 2 - - - VQFN 48
TQFP 64
RAM 20 kB
XMC42x 80 Flash 256 kB 2/2 Up to 9 2 ch 2x 1x 4 ch 1x - 4x 2x 1x - - VQFN 48
TQFP 64
RAM 40 kB
XMC43x 144 Flash 256 kB 2/2 Up to 14 2 ch 2x 1x - - - 4x 2x 1x 1x 1x LQFP 100
RAM 128 kB
XMC44x 120 Flash 256-512 kB 4/4 Up to 18 2 ch 4x 2x 4 ch 2x 4ch 4x 2x 1x 1x - TQFP 64
LQFP 100
RAM 80 kB
XMC45x 120 Flash 512 MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 4x Up to 3 1x 1x - LQFP 100/144
LFBGA 144
RAM 128-160 kB
XMC47x 144 Flash 1.5-2 MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x 1x 1x - LQFP 100/144
LFBGA 196
RAM 276-352 kB
XMC48x 144 Flash 1-2 MB 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x 1x 1x 1x LQFP 100/144
LFBGA 196
RAM 200-352 kB
Supply voltage range 3.1-3.6 V
Temperature range -40°C … 85°C/125°C
Clocks Memory Analog Timer/PWM Connectivity Package
ARM®
Cortex®-M0
Co-processor
Frequency
Peripherals
ADC1 2-bit/S&H
Number of channels
Analog comparators
CCU4 (4 ch)
CCU8 (4 ch)
POS IF
BCCU
US IC
CAN 2.0B
XMC11x - 32 64 Flash 8-64 kB 1/1 Up to
12 - 1x - - - 2x - VQFN 24/40
TSSOP 16/38
RAM 16 kB
XMC12x - 32 64 Flash 16-200 kB 1/2 Up to
12 Up to 3 1x - - 1x 2x - VQFN 24/40
TSSOP 16/28/38
RAM 16 kB
XMC13x ☑ 32 64 Flash 8-200 kB 1/2 Up to
12 Up to 3 1x 1x 1x 1x 2x - VQFN 24/40
TSSOP 16/38
RAM 16 kB
XMC14x ☑ 48 96 Flash 32-200 kB 1/2 Up to
12 Up to 4 2x 2x 2x 1x 4x Up
to 2
VQFN 40/48/64
LQFP 64
RAM 16 kB
Supply voltage range 1.8-5.5 V
Temperature range -40°C … 85°C/105°C
www.infineon.com/xmc
www.infineon.com/dave
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
257
XMC™ digital power explorer kit
The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps
into digital power control with XMC™ microcontrollers. It showcases both XMC™ families Cortex®-M microcontrollers:
XMC4000 and XMC1000, 30V dual N-channel OptiMOS™ MOSFETs and IRS2011S gate drivers. The kit includes two dierent
control card options, XMC1300 control card (ARM® Cortex®-M0) and XMC4200 control card (ARM® Cortex®-M4F), which allow
designers to evaluate both XMC™ microcontroller families and make the right price/performance choice for their application.
Key features
› Synchronous buck converter evaluation kit controlled
with XMC4200 or XMC1300 ARM® Cortex®-M MCUs
› Onboard resistive load banks
› Featuring BSC0924NDI dual N-channel OptiMOS™
and IRS2011S high- and low-side gate driver
› Dierent control schemes possible
– Voltage mode control
– Peak current mode control (with slope compensation)
Customer benefits
› Easy entry in digital power control applications
› Understand the details of voltage/peak current
control and how to extract the maximum of XMC™ devices
› DAVE™ v4 APPs for buck converter and many
more examples
XMC™ digital power explorer kit
Specification Infineon components
Vin 12 VDC MCU XMC4200 or XMC1300
Vout_nom 3.3 VDC MOSFETs OptiMOS™
BSC0924NDI
Iout 2 A MOSFET half-bridge driver IRS2011S
Pout 6 W
www.infineon.com/xmc
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
259
XMC™ power conversion kits
3 kW dual-phase LLC converter using XMC4400
The 3 kW dual-phase LLC demonstration board is an example of a high eiciency isolated DC-DC converter using the
state-of-the-art Infineon components, both power devices and controller/driver ICs. The use of an advanced digital
control using the XMC4400 microcontroller, together with the latest generation of CoolMOS™ and OptiMOS™ devices,
allows achieving a very flat eiciency curve in the entire load range. The demonstration board is targeting the
high voltage DC-DC stage of high-end telecom rectifiers.
Key features
› Full digital control by XMC4400 on the secondary side
› Digital current sharing with phase shedding
› Accurate algorithm able to prevent hard commutation
and capacitive load mode in LLC operation
Customer benefits
› Full digital control by XMC4400 on the secondary side
› Eiciency peak 98.5% and more than 97.2% in the
entire load range
› Easy monitoring and parameter setting via a graphic
user interface
3 kW dual-phase LLC converter using XMC4400
Specification Infineon components
Vin 350-410VDC MCU XMC4400 (LQFP64)
Vout_nom 54.3 VDC SR MOSFET OptiMOS™
BSC093N15NS5
Iout_max 55 A Drivers 1EDI60N12AF
2EDN7524R
Pout 3000 W LLC
Half-bridge MOSFET
CoolMOS™ P6
IPW60R041P6
frange 90-200 kHz Auxiliary PSU ICE2QR2280Z
Peak eiciency >98.4%
RGB LED lighting shield with XMC1202 for Arduino
The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and is able to drive up to three
LED
channels with constant current. The shield itself is powered by a programmable XMC™ 32-bit ARM® MCU with
embedded brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control.
Features
› Compatible with Arduino Uno R3 and XMC1100
boot kit from Infineon
› Easily configurable for various light engines and
any input voltage (within operating conditions)
› Wide DC input voltage range
› Simple I2C interface
Operating conditions
› Nominal: 12-48 V input voltage (max. 6-60V)
› Average LED current up to 700 mA (max. peak current 1 A)
The Infineon shields mentioned above are hardware
compatible with Arduino and Infineon’s XMC™ boot and
relax kits.
www.infineon.com/shields-for-arduino www.infineon.com/3kw-llc-eval-p7-to247
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
258
259
XMC™ power conversion kits
600 W half-bridge LLC evaluation board with 600 V CoolMOS™ C7 SJ MOSFET
with digital control
The 600 W LLC digital control evaluation board shows how to design the half-bridge LLC stage of a server SMPS with
the target to meet 80+ Titanium standard eiciency requirements. For this purpose, the latest CoolMOS™ technologies,
600V CoolMOS™ C7 or P6 superjunction MOSFETs have been used on the primary side, and OptiMOS™ low voltage
power MOSFET in SuperSO8, BSC010N04LS, in the synchronous rectification secondary stage in combination with
QR CoolSET™ ICE2QR2280Z, high- and low-side driver 2EDL05N06PF, low-side gate driver 2EDN7524F and a
XMC4200 microcontroller.
Key features:
› 600 W LLC half-bridge stage with synchronous
rectification (SR)
› All controlled with XMC4200 including:
– Start up (PWM to PFM) and burst-mode algorithms
– Adaptive dead time and capacitive-mode detection
– No hard commutation at any condition
Customer benefits
› Learn LLC topology with a complete system solution
from Infineon
– HW and SW available
› Close to customer solution
– High eiciency → 97.8%
– Reliability and power density
600 W LLC digital control Specification Infineon components
Vin 350-410VDC MCU XMC4200 (VQFN48)
Vout_nom 12 VDC MOSFET SR BSC010N04LS
Iout 50 A HB driver 2EDL05N06PF
Pout 600 W LLC HB MOSFET CoolMOS™ IPP60R190P6
fres 157 kHz Auxiliary PSU ICE2QR2280Z
www.infineon.com/xmc www.infineon.com/800w-pfc-eval www.infineon.com/600w-llc-eval
High power density 800 W 130 kHz platinum server design with XMC1300
The 800 W PFC CCM evaluation board demonstrates the design and practical results of an 800 W 130 kHz platinum server
PFC evaluation board based on Infineon devices, in terms of power semiconductors, non-isolated gate drivers, analog
and digital controllers for the PFC converter, as well as flyback controller for the auxiliary supply. This evaluation board
verifies the performance of the latest 600V CoolMOS™ C7 superjunction MOSFET technology working at 130 kHz in a
PFC CCM boost converter along with EiceDRIVER™ ICs and CoolSiC™ Schottky diode 650 V G5 using digital control.
Key features
› Classic PFC boost stage digitally controlled with
XMC1302 including voltage and current loops
› Protections, including cycle-by-cycle current
protection
› Run time debug with isolated UART to PC interface
and PC soware
Customer benefits
› High eicient PFC stage with a complete system
solution from Infineon
› HW and SW available
› Higher switching frequency permits higher
power density
800 W PFC CCM with XMC1300 Specification Infineon components
Vin 90-265 VAC MCU XMC1302 (TSSOP38)
Vout_nom 380VDC MOSFET 600 V CoolMOS™ C7
Iout 2 A MOSFET driver EiceDRIVER™ 2EDN7524F non-isolated
PWM frequency 130 kHz Diode CoolSiC™ Schottky diode 650 V G5
THD <10% Auxiliary PSU ICE2QR4780Z
Power factor >0.9 from 20% load
Eiciency 97% (peak)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
259
XMC™ power conversion kits
3 kW dual-phase LLC converter using XMC4400
The 3 kW dual-phase LLC demonstration board is an example of a high eiciency isolated DC-DC converter using the
state-of-the-art Infineon components, both power devices and controller/driver ICs. The use of an advanced digital
control using the XMC4400 microcontroller, together with the latest generation of CoolMOS™ and OptiMOS™ devices,
allows achieving a very flat eiciency curve in the entire load range. The demonstration board is targeting the
high voltage DC-DC stage of high-end telecom rectifiers.
Key features
› Full digital control by XMC4400 on the secondary side
› Digital current sharing with phase shedding
› Accurate algorithm able to prevent hard commutation
and capacitive load mode in LLC operation
Customer benefits
› Full digital control by XMC4400 on the secondary side
› Eiciency peak 98.5% and more than 97.2% in the
entire load range
› Easy monitoring and parameter setting via a graphic
user interface
3 kW dual-phase LLC converter using XMC4400
Specification Infineon components
Vin 350-410VDC MCU XMC4400 (LQFP64)
Vout_nom 54.3 VDC SR MOSFET OptiMOS™
BSC093N15NS5
Iout_max 55 A Drivers 1EDI60N12AF
2EDN7524R
Pout 3000 W LLC
Half-bridge MOSFET
CoolMOS™ P6
IPW60R041P6
frange 90-200 kHz Auxiliary PSU ICE2QR2280Z
Peak eiciency >98.4%
RGB LED lighting shield with XMC1202 for Arduino
The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and is able to drive up to three
LED
channels with constant current. The shield itself is powered by a programmable XMC™ 32-bit ARM® MCU with
embedded brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control.
Features
› Compatible with Arduino Uno R3 and XMC1100
boot kit from Infineon
› Easily configurable for various light engines and
any input voltage (within operating conditions)
› Wide DC input voltage range
› Simple I2C interface
Operating conditions
› Nominal: 12-48 V input voltage (max. 6-60V)
› Average LED current up to 700 mA (max. peak current 1 A)
The Infineon shields mentioned above are hardware
compatible with Arduino and Infineon’s XMC™ boot and
relax kits.
www.infineon.com/shields-for-arduino www.infineon.com/3kw-llc-eval-p7-to247
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
261
XMC™ power conversion kits
www.infineon.com/wirelesscharging
XMC™ wireless power controller – enabling wireless charging transmitter applications
Infineon's XMC™ wireless power controller, based on the ARM® Cortex®-M0 core, provides a powerful and cost-eective
platform for high performance, smart and safe wireless charging applications. The XMC™ wireless power controller
helps the next-generation wireless charging systems to meet strict safety, environmental and regulatory requirements,
while still enabling industry-leading charging performance and eiciency. This controller works seamlessly with
Infineon's power devices in a scalable architecture to provide a complete charging solution for everything from a
fast-charge smartphone, to a 20 W robot, or a 60 W drone and beyond.
For a detailed overview of Infineon's wireless charging solutions, check pages 60 to 64.
Key features
› Supports in
ductive and resonant charging methods
› Power levels up to 60 W
› Multiple industry standard and custom charging profiles using the same hardware architecture
› Single- and multi-coil transmitters
› Half- and full-bridge support
› Variable and fixed frequency transmitter types
› Buck and boost topologies
› Integrated flash for parameter storage
› Voltage supply 1.8-5.5 V
› Space savin
g VQFN-40 package
Customer benefits
› Supports 15 W charging and existing standards, including fast charging of smartphones
› Full power 15 W without exotic thermal management
› Achieves charging rates equivalent to wired charging
› Supports custom-charging profiles and industry standards on the same hardware
› Foreign object detection (FOD) with improved accuracy quality-factor monitoring
› Foreign object detection capability can be extended beyond existing standards to improve detection
› Supports custom coils, and greater than three coils
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
260
261
XMC™ power conversion kits
www.infineon.com/automationkit
3 kW dual-phase LLC converter
XMC4800 automation board V2 – explore XMC4800 microcontroller based on
ARM® Cortex®-M4
The XMC4800 automation board V2 uses Infineon’s industry leading XMC™ ARM® Cortex®-M4 microcontroller in
combination with Infineon's supply, interface, communication and safety products. The XMC4800 automation board V2
is designed to evaluate the capabilities of the XMC4800 microcontroller especially in EtherCAT® slave applications and
can be used with a wide range of development tools including Infineon’s free-of-charge Eclipse based IDE, DAVE™.
XMC4800 automation board V2 Type Description OPN
KIT_XMC48_AUT_BASE_V2 The XMC4800 automation board V2 utilizes Infineon’s industry leading
XMC ARM® Cortex®-M4 microcontroller in combination with Infineon's
supply, interface/communication and safety products.
KITXMC48AUTBASEV2TOBO1
XMC4800-E196K2048 ARM® Cortex®-M4 microcontroller XMC4800E196K2048AAXQMA1
ISO2H823V2.5 24 V 8-channel isolated output ISO2H823V25XUMA1
ISO1I813T 24 V 8-channel isolated input ISO1I813TXUMA1
SLS 32AIA020A4 USON10 OPTIGA™ Trust E – embedded security solution SLS32AIA020A4USON10XTMA2
TLE6250GV33 Infineon CAN transceiver TLE6250GV33XUMA1
IFX54441LDV Infineon voltage regulator IFX54441LDVXUMA1
Key features
› XMC4800-E196 MCU based on ARM® Cortex®-M4 at 144 MHz
› EtherCAT® slave controller, 2 MB flash and 352 kB RAM
› OPTIGA™ Trust E embedded security solution (CC EAL6+)
› Real time clock crystal
› SPI FRAM (64 kB non-volatile memory)
› EtherCAT® slave node (2 EtherCAT® PHY and RJ45 Jacks)
› 24 V ISOFACE™ 8-channel inputs and 8-channel outputs CAN transceiver
› CAN transceiver
Customer benefits
› Complete automation kit gateway
› Combined MCU with EtherCAT slave application
› Isolated interfaces with diagnose
› Ethernet connectivity with soware examples available
› 24 V supply
› CAN connectivity
› Full soware DAVE™ examples
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
261
XMC™ power conversion kits
www.infineon.com/wirelesscharging
XMC™ wireless power controller – enabling wireless charging transmitter applications
Infineon's XMC™ wireless power controller, based on the ARM® Cortex®-M0 core, provides a powerful and cost-eective
platform for high performance, smart and safe wireless charging applications. The XMC™ wireless power controller
helps the next-generation wireless charging systems to meet strict safety, environmental and regulatory requirements,
while still enabling industry-leading charging performance and eiciency. This controller works seamlessly with
Infineon's power devices in a scalable architecture to provide a complete charging solution for everything from a
fast-charge smartphone, to a 20 W robot, or a 60 W drone and beyond.
For a detailed overview of Infineon's wireless charging solutions, check pages 60 to 64.
Key features
› Supports in
ductive and resonant charging methods
› Power levels up to 60 W
› Multiple industry standard and custom charging profiles using the same hardware architecture
› Single- and multi-coil transmitters
› Half- and full-bridge support
› Variable and fixed frequency transmitter types
› Buck and boost topologies
› Integrated flash for parameter storage
› Voltage supply 1.8-5.5 V
› Space savin
g VQFN-40 package
Customer benefits
› Supports 15 W charging and existing standards, including fast charging of smartphones
› Full power 15 W without exotic thermal management
› Achieves charging rates equivalent to wired charging
› Supports custom-charging profiles and industry standards on the same hardware
› Foreign object detection (FOD) with improved accuracy quality-factor monitoring
› Foreign object detection capability can be extended beyond existing standards to improve detection
› Supports custom coils, and greater than three coils
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
263
AURIX™ microcontroller
AURIX™ – 32-bit microcontrollers
32-bit multicore TriCore™ – safety joins performance
AURIX™ is Infineon’s family of microcontrollers serving the needs of industrial applications in terms of performance and
safety. Its innovative multicore architecture, based on up to six independent 32-bit TriCore™ CPUs at 300 MHz, has been
designed to meet the highest safety standards while increasing the performance at the same time. Using the
AURIX™ scalable platform, developers will be able to implement applications such as motor control and drives, PLC or any
other automa tion application. Developments using AURIX™ require less eort to achieve the SIL/ IEC61508 standard based
on its innovative safety concept and multiple HW safety features. Furthermore, AURIX™ has enhanced communication
capabilities to support communication between CAN, LIN, FlexRay and Ethernet buses.
Key features
› TriCore™ with DSP functionality
› Best-in-class real-time performance: up to six TriCore™
with up to 300 MHz per core
› Supporting floating point and fix point with all cores
› Up to 6.9 MB of internal RAM, up to 16 MB of flash
› Innovative single supply 5 V or 3.3 V
› IEC61508 conformance to support safety requirements
up to SIL 3
› Embedded EEPROM
› Advanced communication peripherals: CAN FD, LIN, SPI,
FlexRay, Ethernet
Key benefits
› High scalability gives the best cost-performance fit
› High integration leads to significant cost savings
› High integration leads to reduced complexity
› Innovative supply concept leads to best-in-class power
consumption
AURIX™ family package scalability
Upgrade/downgrade with pin-compatible packages
9x series
up to 8 MB
max. SRAM 2.75 MB
triple-core
TQFP-80 LQFP-144
TQFP-144
TQFP-100 LQFP-176 LFBGA-292 BGA-416 LFBGA-516
TC297 TC298 TC299
7x series
up to 4 MB
max. SRAM 472 kB
triple-core
TC275 TC277
TC267
TC237
6x series
up to 2.5 MB
max. SRAM 752 kB
dual-core
TC264 TC265
3x series
up to 2 MB
max. SRAM 708 kB
lockstep-core
TC233 TC234
2x series
up to 1 MB
max. SRAM 96 kB
lockstep-core
TC223 TC224
TC214
1x series
up to 512 kB
max. SRAM 56 kB
lockstep-core
TC213
TC222
TC212
www.infineon.com/aurix
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
262
263
XMC™ peripherals
www.infineon.com/xmc
Supporting the XMC1xxx and XMC4xxx families
In collaboration with the consultancy Hitex, Infineon developed the IEC60730 – class B soware library for XMC™
industrial microcontrollers for household electrical appliances. This is a dedicated soware library for XMC™ MCUs
with routines for internal supervisory functions and for self-diagnostics.
Extended documentation and pre-certified soware libraries to XMC™ Cortex® ARM® based controllers are free of charge.
For more information, please check: www.hitex.com/classb
Documentation Consultancy
› Safety application note
› Failure mode report
› FMEDA tool
by Infineon, revised in workshops by TÜV Süd Implementation support by Hitex
Embedded security for XMC™ MCUs
Infineon and its partners provide solutions which support support with data protection, allowing authentication and
encryption and securing firmware file updates to prevent cloning and downtimes.
Security solutions
Soware Hardware
Secure bootloader
by Infineon, XMC1000
OPTIGA™ family by Infineon
Hardware-based security solutions
CodeMeter µEmbedded
by WIBU, XMC4000 exclusive
OPTIGA™ Trust family
Turnkey and programmable security solutions
OPTIGA™ TPM family
Standardized certified turnkey solution
KMS/CycurKEYS
by ESCRYPT, XMC4000
emSecure
by SEGGER
XMC™ peripherals
IEC60730 class B library for XMC™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
263
AURIX™ microcontroller
AURIX™ – 32-bit microcontrollers
32-bit multicore TriCore™ – safety joins performance
AURIX™ is Infineon’s family of microcontrollers serving the needs of industrial applications in terms of performance and
safety. Its innovative multicore architecture, based on up to six independent 32-bit TriCore™ CPUs at 300 MHz, has been
designed to meet the highest safety standards while increasing the performance at the same time. Using the
AURIX™ scalable platform, developers will be able to implement applications such as motor control and drives, PLC or any
other automa tion application. Developments using AURIX™ require less eort to achieve the SIL/ IEC61508 standard based
on its innovative safety concept and multiple HW safety features. Furthermore, AURIX™ has enhanced communication
capabilities to support communication between CAN, LIN, FlexRay and Ethernet buses.
Key features
› TriCore™ with DSP functionality
› Best-in-class real-time performance: up to six TriCore™
with up to 300 MHz per core
› Supporting floating point and fix point with all cores
› Up to 6.9 MB of internal RAM, up to 16 MB of flash
› Innovative single supply 5 V or 3.3 V
› IEC61508 conformance to support safety requirements
up to SIL 3
› Embedded EEPROM
› Advanced communication peripherals: CAN FD, LIN, SPI,
FlexRay, Ethernet
Key benefits
› High scalability gives the best cost-performance fit
› High integration leads to significant cost savings
› High integration leads to reduced complexity
› Innovative supply concept leads to best-in-class power
consumption
AURIX™ family package scalability
Upgrade/downgrade with pin-compatible packages
9x series
up to 8 MB
max. SRAM 2.75 MB
triple-core
TQFP-80 LQFP-144
TQFP-144
TQFP-100 LQFP-176 LFBGA-292 BGA-416 LFBGA-516
TC297 TC298 TC299
7x series
up to 4 MB
max. SRAM 472 kB
triple-core
TC275 TC277
TC267
TC237
6x series
up to 2.5 MB
max. SRAM 752 kB
dual-core
TC264 TC265
3x series
up to 2 MB
max. SRAM 708 kB
lockstep-core
TC233 TC234
2x series
up to 1 MB
max. SRAM 96 kB
lockstep-core
TC223 TC224
TC214
1x series
up to 512 kB
max. SRAM 56 kB
lockstep-core
TC213
TC222
TC212
www.infineon.com/aurix
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
265
www.infineon.com/aurix
AURIX™ microcontroller
AURIX™ 2nd generation – TC3xx
AURIX™ TC3xx architecture evolution from TC2xx to TC3xx
Checker core
Checker core
Checker core
CPU5
CPU4
CPU3
CPU2
CPU1
EVADC
FCOMP
Secondary ADC
Primary ADC
E0S A0C
GTM
CCU6
GPT
STM
ERAY
CAN FD
ASC LIN
QSPI
I2C
PSI5
PSI5S
SENT
LMUDAM Large
MEM
Mini
MCDS
SPU
RIF
SPU
RIF
Dflash Pflash
0 … 5
ETH
MAC DMA SFI
bridge
HSSL
HSCT
eMMC/SDIO
StdBy ctrl
HSM
FCE
MSC
HSDPM
SCU
IOM
Port
Checker core
TC 1.6P
CPU0
FPU
PSPR, PCACHE
DSPR, DCACHE
System resource interconnect
System
peripheral
bus
Memories
› Larger SRAM
› SRAM/flash ratio increased
› Enhanced MPU
Stand-by control unit
› Low-power modes
ADAS
› New HW accelerator concept -
SPU (signal processing unit)
ADC
› Improvement of existing ADC
› Reduction of capacitive load
Delta-sigma
› Enhanced concept
Performance
› New TriCore™ 162 generation
› New instructions
› Up to 6 CPUs at 300 MHz
› New direct flash access path
IO pads
all 5 V/3.3 V
Ethernet
› 1 Gbit/s ETH
› QoS services
› Remote DMA
HSM: full EVITA compliance
› New accelerators ECC256/SHA256
› Available on all devices
Safety
› LBIST
› MBIST upgrade
eMMC/SDIO
› External NAND flash IF
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
264
265
AURIX™ microcontroller
www.infineon.com/aurix
AURIX™ TC2xx portfolio
Product type
Max. clock frequency [MHz]
Program memory [kB]
SRAM (incl. cache) [kB]
Co-processor 1)
Cores/lockstep
Timed I/O
Number of ADC channels
External bus interface
CAN nodes
Communication interfaces 2)
Temperature ranges 3)
Packages
Additional features/remarks 4)
TC299TX 300 8000
2728
FPU
3/1 263 84/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LFBGA-516 EVR, STBU, HSM
TC299TP 300 8000
728
FPU
3/1 263 84/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LFBGA-516 EVR, STBU, HSM
TC298TP 300 8000
728
FPU
3/1 232 60/10 DS yes 6
4xASCLIN, 6xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LBGA-416 EVR, STBU, HSM
TC297TA 300 8000
2728
FPU, FFT, CIF
3/1 169 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LFBGA-292 EVR, STBU, HSM
TC297TX 300 8000
2728
FPU
3/1 263 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LFBGA-292 EVR, STBU, HSM
TC297TP 300 8000
728
FPU
3/1 169 60/10 DS no 6
4xASCLIN, 4xQSPI, 3xMSC, 2xIC, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD
K
LFBGA-292 EVR, STBU, HSM
TC277TP 200 4000
472
FPU
3/2 169 60/6 DS no 4
4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xIC, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD
K
LFBGA-292 EVR, WUT, HSM
TC275TP 200 4000
472
FPU
3/2 112 60/6 DS no 4
4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xIC, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD
K
LQFP-176 EVR, WUT, HSM
TC267D 200 2500
240
FPU
2/1 169 50/3 DS no 5
4xASCLIN, 4xQSPI, 2xMSC, 2xIC, 10xSENT, 3xPSI5, HSSL, FlexRay, Ethernet, CAN FD
K
LFBGA-292 EVR, STBU
TC265D 200 2500
240
FPU
2/1 112 50/3 DS no 5
4xASCLIN, 4xQSPI, 2xMSC, 2xIC, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD
K
LQFP-176 EVR, STBU
TC264DA 200 2500
752
FPU, FFT, CIF
2/1 88 40/3 DS no 5
4xASCLIN, 4xQSPI, 2xMSC, 2xIC, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD
K
LQFP-144 EVR, STBU
TC264D 200 2500
240
FPU
2/1 88 40/3 DS no 5
4xASCLIN, 4xQSPI, 2xMSC, 2xIC, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD
K
LQFP-144 EVR, STBU
TC237LP 200 2000
192
FPU
1/1 120 24 no 6
2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD
K
LFBGA-292 EVR, WUT, HSM
TC234LA 200 2000
704
FPU, FFT
1/1 120 24 no 6
2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet
K
TQFP-144 EVR, WUT, HSM
TC234LX 200 2000
704
FPU
1/1 120 24 no 6
2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet
K
TQFP-144 EVR, WUT, HSM
TC234LP 200 2000
192
FPU
1/1 120 24 no 6
2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD
K TQFP-144 EVR, WUT, HSM
TC233LP 200 2000
192
FPU
1/1 78 24 no 6
2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD
K TQFP-100 EVR, WUT, HSM
TC224L 133 1000
96
FPU
1/1 120 24 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-144 EVR, WUT
TC223L 133 1000
96
FPU
1/1 78 24 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-100 EVR, WUT
TC222L 133 1000
96
FPU
1/1 59 24 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-80 EVR, WUT
TC214L 133 500
96
FPU
1/1 120 14 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-144 EVR, WUT
TC213L 133 500
96
FPU
1/1 78 24 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-100 EVR, WUT
TC212L 133 500
96
FPU
1/1 59 24 no 3
2xASCLIN, 4xQSPI, 4xSENT, CAN FD
K TQFP-80 EVR, WUT
1) CIF = camera and external ADC Interface, FFT = fast fourier transform accelerator, FPU = floating point unit, PCP = peripheral control processor
2) ASC = asynchronous serial channel, ASCLIN = asyn/synchronous local interconnect network, HSSL= high-speed serial link, I2C = inter-integrated circuit,
LIN = local interconnect network, MLI = micro link interface, MSC = micro second channel, PSI5 = peripheral sensor interface 5, QSPI = queued serial peripheral interface,
SENT = single edge nibble transmission, SSC = synchronous serial channel, CAN FD ISO11898-1:2015
3) Ambient temperature range: A = -40°C ... 140°C, B = 0°C ... 70°C, F = -40°C ... 85°C, H = -40°C ... 110°C, K = -40°C ... 125°C, L = -40°C ... 150°C, X = -40°C ... 105°C
4) EVR = embedded voltage regulator, HSM = hardware security module, STBU = stand-by control unit, WUT = wake-up timer
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
265
www.infineon.com/aurix
AURIX™ microcontroller
AURIX™ 2nd generation – TC3xx
AURIX™ TC3xx architecture evolution from TC2xx to TC3xx
Checker core
Checker core
Checker core
CPU5
CPU4
CPU3
CPU2
CPU1
EVADC
FCOMP
Secondary ADC
Primary ADC
E0S A0C
GTM
CCU6
GPT
STM
ERAY
CAN FD
ASC LIN
QSPI
I2C
PSI5
PSI5S
SENT
LMUDAM Large
MEM
Mini
MCDS
SPU
RIF
SPU
RIF
Dflash Pflash
0 … 5
ETH
MAC DMA SFI
bridge
HSSL
HSCT
eMMC/SDIO
StdBy ctrl
HSM
FCE
MSC
HSDPM
SCU
IOM
Port
Checker core
TC 1.6P
CPU0
FPU
PSPR, PCACHE
DSPR, DCACHE
System resource interconnect
System
peripheral
bus
Memories
› Larger SRAM
› SRAM/flash ratio increased
› Enhanced MPU
Stand-by control unit
› Low-power modes
ADAS
› New HW accelerator concept -
SPU (signal processing unit)
ADC
› Improvement of existing ADC
› Reduction of capacitive load
Delta-sigma
› Enhanced concept
Performance
› New TriCore™ 162 generation
› New instructions
› Up to 6 CPUs at 300 MHz
› New direct flash access path
IO pads
all 5 V/3.3 V
Ethernet
› 1 Gbit/s ETH
› QoS services
› Remote DMA
HSM: full EVITA compliance
› New accelerators ECC256/SHA256
› Available on all devices
Safety
› LBIST
› MBIST upgrade
eMMC/SDIO
› External NAND flash IF
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
267
AURIX™ microcontroller
www.infineon.com/aurix
TriCore™ microcontroller portfolio
Product type
Cores/lockstep
Max clock
frequency
[MHz]
Program
memory
[kB]
SRAM (incl.
cache) [kB]
Radar
accelerator/
radar interface 1)
CAN/CAN FD
nodes
Ethernet
100/1000Mbit
External bus
interface 2)
Communication
interfaces
HSM
Temperature
ranges
Packages
Additional
features/
remarks 3)
AURIX™ TC3xx family
TC399XX 6/4 300 16000 6912 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4xMSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC399XP 6/4 300 16000 2816 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC397XX 6/4 300 16000 6912 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XP 6/4 300 16000 2816 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XA 6/4 300 16000 6912 2x SPU/
8x 400Mbit/s LVDS
12 1 2x HSSL 6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC389QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25xSENT, 4xPSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC387QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25xSENT, 4xPSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TX 3/3 300 6000 4208 no 12 2 eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC375TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC367DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC366DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC365DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x
SENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC357TA 3/2 300 4000 3664 2x SPU/
8x 400Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC356TA 3/2 300 4000 3664 2x SPU/
8x 400Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337DA 2/1 200 2000 1568 1x SPU/
4x 400Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336DA 2/1 200 2000 1568 1x SPU/
4x 400Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC334LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC333LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC332LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
TC327LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC324LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC323LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC322LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
1) SPU – Signal processing unit
2) HSSL – High-speed serial link
3) 8-bit SCR – Standby controller for low power modes
4) EVR – Embedded voltage regulator
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
266
267
AURIX™ microcontroller
www.infineon.com/aurix
› Advanced package technologies deliver the best price/performance ratio
› Customers can choose between dierent devices in the same pin-compatible package
AURIX™ TC3xx package scalability
L – Single locks
tep core D – Dual core T – Triple core Q – Quadruple core X – Sextuple core
TQFP-100TQFP-80
Package
Flash LQFP-176T/LQFP-144 LFBGA-196LFBGA-292 LFBGA-516
TC397Xx
TC397Qx
300 MHz
TC387Qx
300 MHz
TC387Q
300 MHz
TC399Xx
300 MHz
TC389Q
300 MHz
TC377TX
300 MHz
TC377T
300 MHz
TC367D
300 MHz
TC375T
300 MHz
TC365D
300 MHz
TC357TA
300 MHz
TC356TA
300 MHz
TC337DA
200 MHz
TC337L
200 MHz
TC366D
300 MHz
TC336DA
200 MHz
TC336L
200 MHz
TC327L
160 MHz
TC364D
300 MHz
TC334L
200 MHz
TC324L
160 MHz
TC333L
200 MHz
TC332L
200 MHz
TC323L
160 MHz
TC322L
160 MHz
8x series
up to 10 MB
7x A series
up to 6 MB
7x series
up to 6 MB
6x series
up to 4 MB
5x A series
up to 4 MB
3x A series
up to 2 MB
3x series
up to 2 MB
2x series
up to 1 MB
9x series
up to 16 MB
8x series
up to 12 MB
MCU scalability Safety/security concept
AURIX™ TC3xx
› Performance and flash
› Pin compatibility
› Binary-compatible cores
Power consumption
› On-chip SC DC-DC high-eiciency power supply
› Integrated standby controller
› ISO 26262 compliance
› Hardware security support
› IEC61508 compliant
Connectivity
› Ethernet: up to 2x1 GB
› CAN FD: up to 12 channels
› LIN: up to 24 channels
› eMMC IF
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
267
AURIX™ microcontroller
www.infineon.com/aurix
TriCore™ microcontroller portfolio
Product type
Cores/lockstep
Max clock
frequency
[MHz]
Program
memory
[kB]
SRAM (incl.
cache) [kB]
Radar
accelerator/
radar interface 1)
CAN/CAN FD
nodes
Ethernet
100/1000Mbit
External bus
interface 2)
Communication
interfaces
HSM
Temperature
ranges
Packages
Additional
features/
remarks 3)
AURIX™ TC3xx family
TC399XX 6/4 300 16000 6912 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4xMSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC399XP 6/4 300 16000 2816 no 12 1 EBU, eMMC,
2x HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC397XX 6/4 300 16000 6912 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XP 6/4 300 16000 2816 no 12 1 eMMC, 2x
HSSL
6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC397XA 6/4 300 16000 6912 2x SPU/
8x 400Mbit/s LVDS
12 1 2x HSSL 6x SPI, 2x FlexRay, 12x LIN,
25xSENT, 4xPSI5, 2x I2C, 4x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC389QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25xSENT, 4xPSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-516 5 V/3.3 V EVR,
8-bit SCR
TC387QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN,
25xSENT, 4xPSI5, 2x I2C, 3x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TX 3/3 300 6000 4208 no 12 2 eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC377TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC375TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN,
15xSENT, 2xPSI5, 1x I2C, 2x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC367DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC366DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC365DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-176 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x
SENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN,
10xSENT, 2xPSI5, 1x I2C, 1x MSC
EVITA
full
K, L LQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC357TA 3/2 300 4000 3664 2x SPU/
8x 400Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC356TA 3/2 300 4000 3664 2x SPU/
8x 400Mbit/s LVDS
8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337DA 2/1 200 2000 1568 1x SPU/
4x 400Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336DA 2/1 200 2000 1568 1x SPU/
4x 400Mbit/s LVDS
8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC337LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC336LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L LFBGA-196 5 V/3.3 V EVR,
8-bit SCR
TC334LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC333LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC332LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN,
6xSENT
EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
TC327LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L LFBGA-292 5 V/3.3 V EVR,
8-bit SCR
TC324LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-144 5 V/3.3 V EVR,
8-bit SCR
TC323LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-100 5 V/3.3 V EVR,
8-bit SCR
TC322LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA
full
K, L TQFP-80 5 V/3.3 V EVR,
8-bit SCR
1) SPU – Signal processing unit
2) HSSL – High-speed serial link
3) 8-bit SCR – Standby controller for low power modes
4) EVR – Embedded voltage regulator
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
269
AURIX™ microcontroller
ACT is a powerful tool that helps engineers to jump-start
the programming of Infineon microcontrollers.
Key feature
› Altium TASKING VX TriCore™ lite version
including built-in
– AURIX™ pin mapping incl. interactive package view
– AURIX™ iLLD (low-level driver)
– AURIX™ OSEK
For further information on TriCore™ tools,
visit www.infineon.com/aurix-tools
ACT– AURIX™ configuration tool
GUI
Pinning data
Driver configuration data
OS configuration data
Generation of configuration files
Selected drivers source files
Various configuration .c and .h files
Driver files
+ OS
OS source files
Free TriCore™ entry tool chain
This free-of-charge entry tool chain provides all the features required to develop and test soware for TriCore™ and
AURIX™. The tool can be used with all available TriCore™ and AURIX™ starter kits and application boards.
Key features
› Eclipse-based IDE
› Project wizard to easily define the project properties
for device and board support
› High-performance GNU C compiler
› Integrated source-level debugger
› On-chip flash programming support
For further information on TriCore™ tools, visit www.infineon.com/aurix-tools
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
268
269
www.infineon.com/aurix-kits
AURIX™ microcontroller
AURIX™ starter and application kits
Infineon starter kits – 32-bit microcontrollers
TriBoards
Infineon TriCore™ family starter kits are powerful evaluation
systems that enable evaluation and development well
before the target hardware is available. They oer a solid
platform for both hardware and soware engineers to
evaluate and prototype designs that are closely aligned
with their final applications.
Application kits
To simplify the development of your own application, the
kit comes with a variety of onboard components, including
a highly integrated soware development environment
that gives you everything you need to compile, debug, and
flash your AURIX™ multicore application, such as radar,
Arduino, gateway and safety.
System application kits
The system application kits provide a quick jump-start to
typical microcontroller applications, such as motor
control, radar etc. These reference design kits enable
faster design-in support for end applications by providing
a reference board, application soware, tooling and
documentation.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
269
AURIX™ microcontroller
ACT is a powerful tool that helps engineers to jump-start
the programming of Infineon microcontrollers.
Key feature
› Altium TASKING VX TriCore™ lite version
including built-in
– AURIX™ pin mapping incl. interactive package view
– AURIX™ iLLD (low-level driver)
– AURIX™ OSEK
For further information on TriCore™ tools,
visit www.infineon.com/aurix-tools
ACT– AURIX™ configuration tool
GUI
Pinning data
Driver configuration data
OS configuration data
Generation of configuration files
Selected drivers source files
Various configuration .c and .h files
Driver files
+ OS
OS source files
Free TriCore™ entry tool chain
This free-of-charge entry tool chain provides all the features required to develop and test soware for TriCore™ and
AURIX™. The tool can be used with all available TriCore™ and AURIX™ starter kits and application boards.
Key features
› Eclipse-based IDE
› Project wizard to easily define the project properties
for device and board support
› High-performance GNU C compiler
› Integrated source-level debugger
› On-chip flash programming support
For further information on TriCore™ tools, visit www.infineon.com/aurix-tools
Further information, datasheets and documents
www.infineon.com/xmc
www.infineon.com/xmc1000
www.infineon.com/xmc4000
www.infineon.com/aurix
www.infineon.com/makers
Videos
www.infineon.com/xmc-mediacenter
XMC SC Wireless power controller:
www.infineon.com/xmcscwirelesspowercontrollers
Infineon support for
industrial microcontrollers
One platform, countless solutions
XMC™ MCUs ecosystem and enablement –
kits, board, tools and so ware
Boards and kits:
www.infineon.com/xmc-dev
www.infineon.com/connectivitykit
www.infineon.com/ethercat
Ecosystem and tools:
www.infineon.com/xmc-ecosystem
DAVE™ IDE:
www.infineon.com/dave
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Microcontroller support
Further information, datasheets and documents
www.infineon.com/xmc
www.infineon.com/xmc1000
www.infineon.com/xmc4000
www.infineon.com/aurix
www.infineon.com/makers
Videos
www.infineon.com/xmc-mediacenter
XMC SC Wireless power controller:
www.infineon.com/xmcscwirelesspowercontrollers
Infineon support for
industrial microcontrollers
One platform, countless solutions
XMC™ MCUs ecosystem and enablement –
kits, board, tools and so ware
Boards and kits:
www.infineon.com/xmc-dev
www.infineon.com/connectivitykit
www.infineon.com/ethercat
Ecosystem and tools:
www.infineon.com/xmc-ecosystem
DAVE™ IDE:
www.infineon.com/dave
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
270
AURIX™ microcontroller
www.infineon.com/aurix
Preferred Design Houses (PDH) and soware resellers
Optimized open market customer support set up for systems using AURIX™ and XMC™, including soware and other Infineon's
products, such as power products, sensor products and modules. Our partners are trained to use AURIX™ and XMC™.
› 1st level customer support covering
Infineon products/solutions
› Technical interface and support
to the customer
› Driving design at customer
› Basic training for design teams at customer
› 24 h response time to the customer
› Project management and project-specific
application support
› Specification of general soware architecture,
defining required layers, control and
data flow structure etc.
› Specification and implementation of
custom device drivers
› Optimization of soware components
with regard to speed/code size
Classic
(Free of charge)
Premium
(Consultancy mode)
To be agreed between
customers and PDH
› Soware testing
› Support for project-specific
functional safety engineering
› Project-specific support for
security solution
› Safety support
› Security support
› Multicore support
AURIX™ and XMC™ PDH partners
Optimized regional and application-specific presence
EMEA
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•• • • ••••••
• • • ••••• •
•••• • • • •• •
• •
••
Support capabilities
Autosar
Motor control
Lighting
PFC/power conversion
AURIX™ general support HW
AURIX™ general support SW
Safety support IEC61508
Safety support ISO26262
Security support/SHE+
XMC™ general support HW
XMC™ general support SW
Class B certification
Capacitive sensing with XMC™
Secure boot for XMC™
24 GHz radar
77 GHz radar
Support capabilities
Autosar
Motor control
Lighting
PFC/power conversion
AURIX™ general support HW
AURIX™ general support SW
Safety support IEC61508
Safety support ISO26262
Security support/SHE+
XMC™ general support HW
XMC™ general support SW
Class B certification
Capacitive sensing with XMC™
Secure boot for XMC™
24 GHz radar
77 GHz radar
•
•
•
•
•
•
•
•
•
•
•
•
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•
AmericasChina
•• • •
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• • •
••••
• • ••
•
Basic
Advanced
Expert
Extensive knowledge and
ability to fully support development
High-level project-specific application
support/consulting
Essential principles and elementary
know-how to support a customer;
provision of basic training for design teams
Further information, datasheets and documents
www.infineon.com/xmc
www.infineon.com/xmc1000
www.infineon.com/xmc4000
www.infineon.com/aurix
www.infineon.com/makers
Videos
www.infineon.com/xmc-mediacenter
XMC SC Wireless power controller:
www.infineon.com/xmcscwirelesspowercontrollers
Infineon support for
industrial microcontrollers
One platform, countless solutions
XMC™ MCUs ecosystem and enablement –
kits, board, tools and so ware
Boards and kits:
www.infineon.com/xmc-dev
www.infineon.com/connectivitykit
www.infineon.com/ethercat
Ecosystem and tools:
www.infineon.com/xmc-ecosystem
DAVE™ IDE:
www.infineon.com/dave
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Microcontroller support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
273
XENSIV™
Infineon XENSIV™ –
sensing the world
Infineon XENSIV™ sensors are exceptionally precise thanks to industry-leading
technologies. They are the perfect fit for various customer applications in
automotive, industrial and consumer markets.
From the world leader in sensing technology, XENSIV™ sensors simplify lives
by enabling “things” to “see”, “hear”, “feel” and intuitively “understand”
their environment. As a result of proven quality and outstanding reliability,
customers can rely on XENSIV™ for system stability, durability and integrity.
Providing high accuracy and best-in-class measurement performance,
XENSIV™ sensors add great value to customer applications. More than
40 years’ experience in sensing solutions and a deep-rooted system
understanding result in the broadest portfolio of ready-to-use sensor
solutions on the market. Ecosystem partners and our customers partner with
us for leading technologies, perfect-fit solutions and continuous innovation.
With a proven track record in IoT innovation, we continue to seamlessly
and securely connect people and machines. Many IoT trends, such as smart
devices and wearables, electromobility and connected cars, smart factories
and homes, and energy intelligence are being driven by technologies that
develop with XENSIV™ sensors families as one of their key elements. Today,
we are already inspiring the next generation of smart environments, capable
of understanding and responding to human communication.
Infineon's semiconductors are at the very heart of machine-to-machine
(M2M), human-machine interface (HMI), mobile and wireless infrastructure
technologies. As the technological boundary between humans and machines
gradually disappears, these devices need even more advanced intelligence,
enriched with voice assistance capabilities and the latest sensor fusion
innovations, not to mention robust security technologies to protect personal
data. Infineon’s sensors and microphones are already delivering this
intelligent functionality and inspiring the next step in mobile connectivity.
www.infineon.com/sensors
XENSIV™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
272
273
XENSIV™
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
273
XENSIV™
Infineon XENSIV™ –
sensing the world
Infineon XENSIV™ sensors are exceptionally precise thanks to industry-leading
technologies. They are the perfect fit for various customer applications in
automotive, industrial and consumer markets.
From the world leader in sensing technology, XENSIV™ sensors simplify lives
by enabling “things” to “see”, “hear”, “feel” and intuitively “understand”
their environment. As a result of proven quality and outstanding reliability,
customers can rely on XENSIV™ for system stability, durability and integrity.
Providing high accuracy and best-in-class measurement performance,
XENSIV™ sensors add great value to customer applications. More than
40 years’ experience in sensing solutions and a deep-rooted system
understanding result in the broadest portfolio of ready-to-use sensor
solutions on the market. Ecosystem partners and our customers partner with
us for leading technologies, perfect-fit solutions and continuous innovation.
With a proven track record in IoT innovation, we continue to seamlessly
and securely connect people and machines. Many IoT trends, such as smart
devices and wearables, electromobility and connected cars, smart factories
and homes, and energy intelligence are being driven by technologies that
develop with XENSIV™ sensors families as one of their key elements. Today,
we are already inspiring the next generation of smart environments, capable
of understanding and responding to human communication.
Infineon's semiconductors are at the very heart of machine-to-machine
(M2M), human-machine interface (HMI), mobile and wireless infrastructure
technologies. As the technological boundary between humans and machines
gradually disappears, these devices need even more advanced intelligence,
enriched with voice assistance capabilities and the latest sensor fusion
innovations, not to mention robust security technologies to protect personal
data. Infineon’s sensors and microphones are already delivering this
intelligent functionality and inspiring the next step in mobile connectivity.
www.infineon.com/sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
275
XENSIV™ MEMS microphone
Infineon's dual backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as
utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of
105 dB. The microphone noise floor is at 25 dB[A] (69 dB[A] SNR) and distortion does not exceed 1 percent even at sound
pressure levels of 128 dB SPL (AOP 130 dB SPL). The flat frequency response (28 Hz low-frequency roll-o) and tight
manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone
(array) applications.
Devices with voice user interface
TV, laptop and set top box
+ Highest beam-forming precision + Best speech recognition
+ Sensitive to soest audio signals
+ Extended voice pickup distance
+ Best noise attenuation
+ Smallest pattern deviation detection
+ Best audio quality
Audio
Digital voice assistance and robots
Security
Smart home appliances
Headsets Industry 4.0
+ Ultraclear voice pickup
Conference
www.infineon.com/microphones
Product portfolio
Maximum noise rejection
Ultra precise corner frequency
< +/- 7Hz
Ultralow distorsion
(<1% THD)
IM69D130: 128dBSPL
IM69D120: 118dBSPL
AIN(+)
AIN(-)
Class leading
dynamic range
IM69D130: 105dB
IM69D120: 95dB
Phase matched microphones
+/- 2deg @1kHz
Product OPN Package Current consumption Sensitivity Signal to noise Supply voltage
IM69D130 IM69D130V01XTSA1 LLGA-5-1 980 µA -36 dBFS 69 dB 1.62-3.6 V
IM69D120 IM69D120V01XTSA1 LLGA-5-1 980 µA -26 dBFS 69 dB 1.62-3.6 V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
274
275
XENSIV™ MEMS microphone
XENSIV™ MEMS microphone
Time to debottleneck your audio chain
The popularity of voice user interfaces and the usage of audio recording to share information and experiences are
increasing dramatically. However, the performance of microphones oen limits the potential of today’s cutting edge
devices. Not anymore!
Infineon's XENSIV™ MEMS microphones introduce a new performance class for digital MEMS microphones that
overcome existing audio chain limitations. IM69D130 is designed for applications where low self-noise (high SNR),
wide dynamic range, low distortions and a high acoustic overload point are required.
Features
› 69 dB(A) signal-to-noise ratio (SNR)
› Below 1 percent distortions at 128 dBSPL (130 dBSPL AOP)
› Digital (PDM) interface with 6 µs group delay at 1 kHz
› Tight sensitivity (-36 ±1 dB) and phase (± 2 deg) tolerances
› 28 Hz low frequency roll-o
› 4.0 x 3.0 x 1.2 mm package
Benefits
› High fidelity and far field audio recording
› Matched, noise and distortion free audio signals for
advanced audio processing
› Ultralow group delay for latency-critical applications
› No analog components required
Don’t miss a single thing!
With XENSIV™ MEMS microphones, you can create a new user
experience benchmark in audio recording.
Talk to tomorrow and be heard!
With XENSIV™ MEMS microphones, you can define the benchmark in
speech recognition for a new user experience.
Hear nothing but your favorite beats!
With XENSIV™ MEMS microphones, you can create headsets oering
users a benchmark noise cancellation experience.
www.infineon.com/microphones
Typical applications
› High quality audio capturing: e.g. cameras, camcorders, conference systems
› Voice user interface: e.g. smart speaker, home automation and IoT devices
› Active noise cancellation: headphones and earphones
› Audio pattern detection: predictive maintenance, security or safety applications
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
275
XENSIV™ MEMS microphone
Infineon's dual backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as
utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of
105 dB. The microphone noise floor is at 25 dB[A] (69 dB[A] SNR) and distortion does not exceed 1 percent even at sound
pressure levels of 128 dB SPL (AOP 130 dB SPL). The flat frequency response (28 Hz low-frequency roll-o) and tight
manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone
(array) applications.
Devices with voice user interface
TV, laptop and set top box
+ Highest beam-forming precision + Best speech recognition
+ Sensitive to soest audio signals
+ Extended voice pickup distance
+ Best noise attenuation
+ Smallest pattern deviation detection
+ Best audio quality
Audio
Digital voice assistance and robots
Security
Smart home appliances
Headsets Industry 4.0
+ Ultraclear voice pickup
Conference
www.infineon.com/microphones
Product portfolio
Maximum noise rejection
Ultra precise corner frequency
< +/- 7Hz
Ultralow distorsion
(<1% THD)
IM69D130: 128dBSPL
IM69D120: 118dBSPL
AIN(+)
AIN(-)
Class leading
dynamic range
IM69D130: 105dB
IM69D120: 95dB
Phase matched microphones
+/- 2deg @1kHz
Product OPN Package Current consumption Sensitivity Signal to noise Supply voltage
IM69D130 IM69D130V01XTSA1 LLGA-5-1 980 µA -36 dBFS 69 dB 1.62-3.6 V
IM69D120 IM69D120V01XTSA1 LLGA-5-1 980 µA -26 dBFS 69 dB 1.62-3.6 V
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
277
XENSIV™ pressure sensors
Functional block diagram
Application circuit example (in IC configuration)
Pin configuration (top view)
DPS422 package drawingDPS310 package drawing DPS368 package drawing
www.infineon.com/pressuresensor
SCK
INT
SDA
I2C serial interface
C
SDO
SCK
SDI
CSB
GND
GND
VDD
VDDIO
Pressure sensor
Processor
VDDIO
1.7 … 3.6 V
1.2 … 3.6 V
C
R
VDDIO
R
N.C.
Interrupt (optional)
I2
C/SPI
VDDIO
VDD
Temperature
sensor Digital signal
processing
Calibration
coefficients
FIFO
Capacitive
pressure sensor
Digital core
Memory
interface
Voltage
regulators
Digital interface
MUX ADC
4
3
2
1
5
6
7
8
GND
CSB
SDI
SCK
VDD
GND
V
DDIO
SDO
Vent hole
Pin Name Function
1 GND Ground
2CSB Chip select
3 SDI Serial data in/out
4 SCK Serial clock
5 SDO Serial data out
6 VDDIO Digital interface supply
7 GND Ground
8 VDD Analog supply
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
276
277
XENSIV™ pressure sensors
XENSIV™ digital barometric pressure sensor
For mobile and wearable devices
Infineon’s digital barometric pressure sensor family is the best choice for mobile and wearable devices due to its small form
factor, high precision and low power consumption. Pressure sensing is based on capacitive technology which guarantees
ultrahigh precision (±2/±5 cm) and relative accuracy (±0.6 hPa) over a wide temperature range. The sensor’s internal signal
processor converts the output from the pressure and temperature sensor elements to 24-bit results. Each pressure sensor
has been calibrated individually and contains calibration coeicients. The coeicients are used in the application to convert
the measurement results to true pressure and temperature values. All sensors have a FIFO that can store the latest 32
measurements. Since the host processor can remain in a sleep mode for a longer period between readouts, a FIFO can reduce
the system power consumption. Sensor measurements and calibration coeicients are available via the serial I2C/SPI interface.
DPS310
Barometric pressure sensor with very low power consumption, recommended for applications where power
consumption is critical and highest precision in pressure metering is required.
DPS422
Monolithic chip solution that has an ultrasmall critical area and a very thin package (0.73 mm typ.). Beneath high preci-
sion pressure metering, DPS422 oers also highly accurate absolute temperature sensing (±0.4ºC), which is required
in applications like weather stations, thermostats, etc. It can be used in applications such as weather stations / smart
thermostats and oers additional features by pressure sensing (e.g. intruder detection, weather forecast).
DPS368*
DPS368 oers the best-in-class resolution (±2 cm), a very fast read-out speed and a low current consumption. The sensor can
be used in harsh environment, as it is robust against water (IPx8 - 50 m under water for 1 hour), dust and humidity. The small
package size saves up to 80 percent of the space and makes the DPS368 ideal for mobile applications and wearable devices.
Typical applications
› Drones: altitude detection and height stability
› Health and fitness: accurate elevation gain and step counting (e.g. for smart watches)
› Outdoor navigation: GPS start-up time/accuracy improvement; dead reckoning (e.g. in tunnels)
› Indoor navigation: floor detection e.g. in shopping malls and parking garages
› Smart home: micro weather forecasting; room temperature control; intruder detection
› Air flow control: Smart filter replacement alarm (e.g. in home appliances); predictive maintenance
› Health care: fall detection; respiratory devices; smart inhalers
Key product features DPS310 DPS422 DPS368*
Package size
LGA 8-pin: 2.0 x 2.5 x 1.0 mm LGA 8-pin: 2.0 x 2.5 x 0.73 mm LGA 8-pin: 2.0 x 2.5 x 1.1 mm
Operating pressure range
300 … 1200 hPa
Operating temperature range
-40 … 85°C
Pressure level precision
± 0.005 hPa (or ±0.05 m) ± 0.002 hPa (or ±0.02 m)
Relative accuracy
± 0.06 hPa (or ±0.5 m)
Absolute accuracy
± 1 hPa (or ±8 m)
Temperature accuracy
0.5°C < 0.4°C 0.5°C
Pressure temperature sensitivity
0.5 Pa/K
Measurement time
3.6 ms (low precision); 27.6 ms (standard mode)
Average current consumption
@ 1 Hz sampling rate
1.7 μA pressure measurement, 1.5 μA temp.
measurement, standby 0.5 μA
1.7 μA pressure measurement, 2.0 μA temp.
measurement, standby < 1 μA
1.7 μA pressure measurement, 1.5 μA temp.
measurement, standby 0.5 μA
Supply voltage
VDDIO: 1.2 – 3.6 V; VDD: 1.7 – 3.6 V
Operating modes
Command (manual), background (automatic), standby
Interface
I2C and SPI, both with optional interrupt
www.infineon.com/pressuresensor
* Environmentally protected pressure sensor, available Q2 2019
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
277
XENSIV™ pressure sensors
Functional block diagram
Application circuit example (in IC configuration)
Pin configuration (top view)
DPS422 package drawingDPS310 package drawing DPS368 package drawing
www.infineon.com/pressuresensor
SCK
INT
SDA
I2C serial interface
C
SDO
SCK
SDI
CSB
GND
GND
VDD
VDDIO
Pressure sensor
Processor
VDDIO
1.7 … 3.6 V
1.2 … 3.6 V
C
R
VDDIO
R
N.C.
Interrupt (optional)
I2
C/SPI
VDDIO
VDD
Temperature
sensor Digital signal
processing
Calibration
coefficients
FIFO
Capacitive
pressure sensor
Digital core
Memory
interface
Voltage
regulators
Digital interface
MUX ADC
4
3
2
1
5
6
7
8
GND
CSB
SDI
SCK
VDD
GND
V
DDIO
SDO
Vent hole
Pin Name Function
1 GND Ground
2CSB Chip select
3 SDI Serial data in/out
4 SCK Serial clock
5 SDO Serial data out
6 VDDIO Digital interface supply
7 GND Ground
8 VDD Analog supply
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
279
XENSIV™ pressure sensors
KP275
Media robust MAP sensor with digital interface
Features
› Media robustness for current automotive requirements
› Digital single edge nibble transmission (SENT) interface
› Excellent accuracy of ±0.77 percent FFS
› Green SMD package
› Temperature range -40 to +170°C
› Integrated NTC temperature sensor functionality
Block diagram
Integrated pressure sensor ICs for manifold and barometric air pressure
Pressure
cells
Voltage
regulator
Analog
Normal mode/
Digital
diagnosis mode
E2PROM
interface E2PROM
Temperature
compensation ROM
Reset
VDDA
MUX
Digital
signal
processing
(interface driver)
Buer amplifier
NTC conditioning
ADC
Digital
core
(iSM)
SPI
interface
V
DD
NCS
NTC
IN
CLK
SDI
SDO
GND
SENTOU
T
VDDD
Product Pressure range [kPa] Max. accuracy [kPa] Max. operating temperature [°C] Automotive Industrial
KP21x 10 ... 150 1.0 140 ✓ ✓
KP22x 10 ... 400 2.5 140 ✓ ✓
KP23x 15 ... 115 1.0 125 ✓ ✓
KP236N6165 60 ... 165 1.0 125 ✓ ✓
KP253 60 ... 165 1.0 125 ✓ ✓
KP254 40 ... 115 1.5 125 ✓ ✓
KP255 10 ... 125 1.4 140 ✓ ✓
KP256 60 ... 165 1.0 125 ✓ ✓
KP275 10 ... 400 3.0 170 ✓ ✓
www.infineon.com/pressure
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
278
279
XENSIV™ pressure sensors
Absolute pressure sensors (MAP and BAP)
KP21x/KP22x
Analog manifold air pressure sensor IC family (MAP + turbo MAP)
KP23x
Analog barometric air pressure (BAP) sensor IC family
Infineon's pressure sensors are ideal for a wide range of applications in the automotive and industrial sectors.
Typical applications in automotive include side airbag, engine control and seat comfort with high quality, highly
accurate products adhering to ISO26262 standard. Infineon oers the ideal portfolio for these systems.
The analog and digital interfaces of Infineon's pressure sensors provide customers with a high degree of design
flexibility and enable manufacturers to meet evolving market
demands.
Features
› Manifold air pressure measurement – MAP and
turbo MAP
› Excellent accuracy of up to 1.0 kPa over a large
temperature range
› Ratiometric analog voltage output proportional
to the applied pressure
› Output signal fully compensated over pressure and
temperature
› Pressure range from 10 to 400 kPa
› Temperature range from -40 to +140°C
› Output clamping (optional)
› Complete product family available with multiple
transfer function
› Reverse polarity protection
› Green SMD package
Features
› Absolute air pressure measurement
› Excellent accuracy of 1.0 kPa over a large temperature
range
› Ratiometric analog voltage output proportional
to the applied pressure
› Output signal fully compensated across pressure and
temperature range
› Pressure range from 40 to 115 kPa
› Temperature range from -40 to +125°C
› Serial service interface
› Open bond detection (OBD) for supply and GND
› Inverse polarity protection
› Green SMD package
www.infineon.com/pressure
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
279
XENSIV™ pressure sensors
KP275
Media robust MAP sensor with digital interface
Features
› Media robustness for current automotive requirements
› Digital single edge nibble transmission (SENT) interface
› Excellent accuracy of ±0.77 percent FFS
› Green SMD package
› Temperature range -40 to +170°C
› Integrated NTC temperature sensor functionality
Block diagram
Integrated pressure sensor ICs for manifold and barometric air pressure
Pressure
cells
Voltage
regulator
Analog
Normal mode/
Digital
diagnosis mode
E2PROM
interface E2PROM
Temperature
compensation ROM
Reset
VDDA
MUX
Digital
signal
processing
(interface driver)
Buer amplifier
NTC conditioning
ADC
Digital
core
(iSM)
SPI
interface
V
DD
NCS
NTC
IN
CLK
SDI
SDO
GND
SENTOU
T
VDDD
Product Pressure range [kPa] Max. accuracy [kPa] Max. operating temperature [°C] Automotive Industrial
KP21x 10 ... 150 1.0 140 ✓ ✓
KP22x 10 ... 400 2.5 140 ✓ ✓
KP23x 15 ... 115 1.0 125 ✓ ✓
KP236N6165 60 ... 165 1.0 125 ✓ ✓
KP253 60 ... 165 1.0 125 ✓ ✓
KP254 40 ... 115 1.5 125 ✓ ✓
KP255 10 ... 125 1.4 140 ✓ ✓
KP256 60 ... 165 1.0 125 ✓ ✓
KP275 10 ... 400 3.0 170 ✓ ✓
www.infineon.com/pressure
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
281
24GHz radar sensor ICs
www.infineon.com/24GHz
Infineon BGT24M/L family of MMIC chips
Infineon's range of 24 GHz industrial radar chips provides four configurations of transmit and receiver channels,
ensuring that there is a chip to support your specific application. From basic applications such as motion detection
in security systems, which only requires one transmit and one receive channel, to more complex applications like 3D
positioning, which requires two or more receive channels, our range of radar chips supports all of your requirements.
Features Infineon MMIC Benefits
› 24 GHz ISM band operation for
motion, speed, direction move-
ment and distance measurements
› 4 MMIC chips available
› Highly integrated
› Long range distance detection of
moving objects up to 30 m
› Wide range speed detection
up to ±100 km/h
› Lower BOM costs
2.4 mm
2.4 mm
5.5 mm
4.5 mm
The BGT24LTR11N16 key features
› 24 GHz transceiver MMIC
› Fully integrated low phase noise VCO
› Built in temperature compensation circuit for
VCO stabilization, no PLL needed
› Low power consumption
› Fully ESD protected device
› Single ended RF and IF terminals
› 200 GHz bipolar SiGe:C technology B7HF200
› Single supply voltage 3.3 V
› Divider output for PLL operation
› Smallest 24 GHz transceiver in the market
Product Configuration Features
BGT24MTR11 1Tx + 1Rx › Measures not just motion, but also speed, direction, and distance
› Small form factor
› Resistance to moisture, dirt and temperature
› Increased area coverage
› Discrete design
› Energy savings
› Privacy protection
› Adaptable to dierent application requirements
› Highly integrated chips eliminating costly external components
BGT24MR2 2Rx
BGT24MTR12 1Tx + 2Rx
BGT24LTR11 1Tx + 1Rx
Balun
Balun
Balun
Balun
Balun
filter
Polyphase
Balun
MPA
V
CC
VTUNE
VEE
VCC _DIV DIV
Tx
VEE
VEE
R_TUNE V_PTATV
CC
RFIN
VEE
Tx_ON
LNA
90°
IFI IFQ
0°
f-div PTAT
_PTAT
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
280
281
24GHz radar sensor ICs
www.infineon.com/24GHz
XENSIV™ 24 GHz radar sensor ICs
Infineon oers a wide portfolio of mmWave radar sensors to address dierent customer requirements. The BGT24M/L
family is the largest and highest integrated 24 GHz radar transceiver family currently on the market, saving ~30 percent
board space compared to discrete lineups. Infineon provides a total of four 24 GHz industrial radar chips, providing a
range of dierent transmitter and receiver channel configurations, supporting dierent application requirements.
In addition to the BGT24M/L family of MMIC chips, Infineon provides a continuously expanding range of evaluation
and demonstration boards to support the testing and development of radar in multiple applications. All boards are
provided with base level soware to support the ease of use and faster time-to-market integration.
Utilizing our strong network of partners, the radar portfolio is extended to include a range of easy-to-integrate
modules. Each of them contains Infineon's 24 GHz MMIC.
Applications
› Building and smart home (IoT)
› Indoor/outdoor lighting
› Security
› UAV/multicopters
› Robotics
› Smart street lighting
Key benefits
› Direction, proximity and speed detection
› Hidden mounting capability
› Maintains operation through harsh weather conditions
› Motion tracking
› Sensitive enough to capture breathing and heartbeat
› Target positioning
› Adaptable to dierent application requirements
Intrusion detection
Air flight control
Streetlighting
Collision avoidance in
multicopters and robotics
People tracking and occupancy
detection in IoT/smart home
Gesture control on TV
Indoor and outdoor
lighting systems
Collision
avoidance
proximity sensor to
activate appliances BSD (blind spot detection) in the car
Intruder alarm/presence
detection in surveillance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
281
24GHz radar sensor ICs
www.infineon.com/24GHz
Infineon BGT24M/L family of MMIC chips
Infineon's range of 24 GHz industrial radar chips provides four configurations of transmit and receiver channels,
ensuring that there is a chip to support your specific application. From basic applications such as motion detection
in security systems, which only requires one transmit and one receive channel, to more complex applications like 3D
positioning, which requires two or more receive channels, our range of radar chips supports all of your requirements.
Features Infineon MMIC Benefits
› 24 GHz ISM band operation for
motion, speed, direction move-
ment and distance measurements
› 4 MMIC chips available
› Highly integrated
› Long range distance detection of
moving objects up to 30 m
› Wide range speed detection
up to ±100 km/h
› Lower BOM costs
2.4 mm
2.4 mm
5.5 mm
4.5 mm
The BGT24LTR11N16 key features
› 24 GHz transceiver MMIC
› Fully integrated low phase noise VCO
› Built in temperature compensation circuit for
VCO stabilization, no PLL needed
› Low power consumption
› Fully ESD protected device
› Single ended RF and IF terminals
› 200 GHz bipolar SiGe:C technology B7HF200
› Single supply voltage 3.3 V
› Divider output for PLL operation
› Smallest 24 GHz transceiver in the market
Product Configuration Features
BGT24MTR11 1Tx + 1Rx › Measures not just motion, but also speed, direction, and distance
› Small form factor
› Resistance to moisture, dirt and temperature
› Increased area coverage
› Discrete design
› Energy savings
› Privacy protection
› Adaptable to dierent application requirements
› Highly integrated chips eliminating costly external components
BGT24MR2 2Rx
BGT24MTR12 1Tx + 2Rx
BGT24LTR11 1Tx + 1Rx
Balun
Balun
Balun
Balun
Balun
filter
Polyphase
Balun
MPA
V
CC
VTUNE
VEE
VCC _DIV DIV
Tx
VEE
VEE
R_TUNE V_PTATV
CC
RFIN
VEE
Tx_ON
LNA
90°
IFI IFQ
0°
f-div PTAT
_PTAT
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
283
24GHz radar sensor
24 GHz modules
Partnering with the leading radar solution providers enables Infineon to connect our customers looking for turnkey
solutions and design support for a complete range of applications.
By integrating Infineon's 24GHz MMIC chip into the partners easy-to-use and simple-to-integrate modules the
complexity and time to market for a range of applications such as home automation, multicopter, robotics and
street lighting, are reduced.
Lighting
Security
Touch free switches
Door automation
New application or simple PIR replacement? Radar has it covered.
Radar, used in motion detection applications, increases accuracy when compared to passive infrared (PIR) technology,
allowing a more precise measurement of object detection, and providing new capabilities such as the detection of
speed and the direction of moving objects. Radar is also superior to camera-based systems by allowing detection of
the objects while keeping identities anonymous.
Visit the link below to view our network of partners who provide modules and design support for all 24GHz industrial
applications: www.infineon.com/24GHzpartners
› Complete module, including
radar MMIC, antenna options,
MCU signal processing options,
and SW options (Doppler, FSK
and FMCW versions available)
› Ease of design
› Turnkey solution, no need for
test and certification
Features Partner modules using
Infineon chips Benefits
www.infineon.com/24GHz
Module (RF module; RF module
+ MCU including SW)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
282
283
24GHz radar sensor
www.infineon.com/24GHz
24 GHz evaluation and demonstration boards
Infineon's range of 24 GHz evaluation and demo boards continues to expand to support the needs of our customers
and the increasing number of innovative ways radar is being incorporated into new applications.
› Three system boards available
› All include 24 GHz radar and XMC™
microcontroller
› Kit contains user manual, GUI,
MATLAB compiler and Gerber files
› Requires soware
› Capability to detect motion, speed
and direction of movement
(approaching or retreating)
distance and angle of arrival based
on hardware
› Firmware/soware available for
each radar mode
Features Infineon development kit Benefits
Sense2GOL (BGT24LTR11 + XMC1300) Distance2Go (BGT24MTR11 + XMC4200) Position2Go (BGT24MTR12 + XMC4700)
› Capability to detect motion, speed and
direction of movement (approaching or
retreating)
› Precise measurement of object detection
compared to PIR
› Operates in harsh environments and detects
through non-metallic materials
› Low power mode for enhanced battery life
› One of the world’s smallest complete
radar + MCU development kit
› BGT24LTR11 – 24 GHz highly integrated
RF MMIC
› XMC1300 ARM® Cortex®-M0 –32-bit industrial
microcontroller
› Debug over Cortex 10 pin debug connector
› Integrated multiple element patch antennas
› Capability to detect distance of multiple
targets
› Capability to detect motion, speed and
direction of movement (approaching or
retreating)
› Operates in harsh environments and detects
through non-metallic materials
› BGT24MTR11 – 24 GHz highly integrated
RF MMIC
› XMC4200 ARM® Cortex®-M4 –32-bit industrial
microcontroller
› Debug over Cortex 10 pin debug connector
› Integrated multiple element patch antennas
› Capability to detect and track position of
multiple targets
› Capability to detect distance of multiple
targets
› Capability to detect motion, speed and
direction of movement (approaching or
retreating)
› Operates in harsh environments and detects
through non-metallic materials
› BGT24MTR12 – 24 GHz highly integrated
RF MMIC
› XMC4700 ARM® Cortex®-M4 –32-bit industrial
microcontroller
› Debug over Cortex 10 pin debug connector
› Integrated multiple element patch antennas
Main applications
› Security
› Lighting control
› Automatic door opener
› Vital sensing
Main applications
› Drone: so landing/obstacle avoidance
› Smart toilets
› Tank level sensing
› Intelligent switches
Main applications
› Drone/robots: obstacle avoidance
› Security
› People tracking (IoT, smart home)
› Vital sensing
Board dimensions
› 25 mm x 25 mm (pictured with the Segger
debugger break-o board for reprogram-
ming)
Board dimensions
› Board 36 mm x 45 mm
Board dimensions
› Board 50 mm x 45 mm
Kit contents
› User manual
› Demonstration board
› SW GUI to operate kit
› Schematic and bill-of-materials of module
Kit contents
› User's manual
› Demonstration board
› Corner reflector
› SW GUI to operate kit
› FMCW FW and SW 1)
› Doppler FW and SW 1)
› Schematic and bill-of-materials of module
Kit contents
› User's manual
› Demonstration board
› Corner reflector
› SW GUI to operate kit
› FMCW FW and SW
› Doppler FW and SW
› Schematic and bill-of-materials of module
Demokit with SW, reference design
+ Soware
1) Usage of the FMCW and/or Doppler FW and SW requires agreeing to Infineon’s user’s agreement and licensing terms.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
283
24GHz radar sensor
24 GHz modules
Partnering with the leading radar solution providers enables Infineon to connect our customers looking for turnkey
solutions and design support for a complete range of applications.
By integrating Infineon's 24GHz MMIC chip into the partners easy-to-use and simple-to-integrate modules the
complexity and time to market for a range of applications such as home automation, multicopter, robotics and
street lighting, are reduced.
Lighting
Security
Touch free switches
Door automation
New application or simple PIR replacement? Radar has it covered.
Radar, used in motion detection applications, increases accuracy when compared to passive infrared (PIR) technology,
allowing a more precise measurement of object detection, and providing new capabilities such as the detection of
speed and the direction of moving objects. Radar is also superior to camera-based systems by allowing detection of
the objects while keeping identities anonymous.
Visit the link below to view our network of partners who provide modules and design support for all 24GHz industrial
applications: www.infineon.com/24GHzpartners
› Complete module, including
radar MMIC, antenna options,
MCU signal processing options,
and SW options (Doppler, FSK
and FMCW versions available)
› Ease of design
› Turnkey solution, no need for
test and certification
Features Partner modules using
Infineon chips Benefits
www.infineon.com/24GHz
Module (RF module; RF module
+ MCU including SW)
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
285
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Automotive Industrial Consumer Package
TLE4961-1M/L Latch 2.0 -2.0 4.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-2M Latch 5.0 -5.0 10.0 ✓ ✓ ✓ SOT23
TLE4961-3M/L Latch 7.5 -7.5 15.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4964-1M Switch 18.0 12.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-2M Switch 28.0 22.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-3M Switch 12.5 9.5 3.0 ✓ ✓ ✓ SOT23
TLE4964-5M Switch 7.5 5.0 2.5 ✓ ✓ ✓ SOT23
TLE4968-1M/L Bipolar 1.0 -1.0 2.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-5M Latch 15.0 -15.0 30.0 ✓ ✓ ✓ SOT23
TLE4961-4M Latch 10.0 -10.0 20.0 ✓ ✓ ✓ SOT23
TLE4964-4M Switch 10.0 8.5 1.5 ✓ ✓ ✓ SOT23
TLE4964-6M Switch 3.5 2.5 1.0 ✓ ✓ ✓ SOT23
TLV4964-1M Switch 18.0 12.5 5.5 – – ✓ SOT23
TLV4964-2M Switch 28.0 22.5 5.5 – – ✓ SOT23
TLI4961-1M/L Latch 2.0 -2.0 4.0 – ✓ ✓ SOT23/SSO-3-2
TLV4961-3M Latch 7.5 -7.0 15.0 – – ✓ SOT23
XENSIV™ magnetic position sensors
Hall switches
The energy-saving option with excellent accuracy and robustness
TLE/TLI/TLV4961/64/6: Energy-eicient Hall switch family for up to 32 V
The TLE/TLI/TLV496x-xM/L family of Hall switches saves energy and enables designers to create precise, compact
systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut energy
consumption by up to 50 percent compared with similar competitor products. Thanks to its small magnetic hysteresis,
the family paves the way for precise switching points in systems. The integrated temperature profile compensates
magnetic dris and enables stable performance over temperature and lifetime.
TLE/TLI/TLV496x-xM products come in the smallest SOT23 package, thus reducing height by 10 percent compared with
predecessor products. The sensors also feature an integrated functionality test for better system control.
www.infineon.com/Hall-switches
Features
› Current consumption of just 1.6 mA
› 3 to 32 V supply voltage range (over voltage up to 42 V)
› 7 kV ESD protection (HBM)
› Overtemperature and overcurrent protection
› Temperature compensation
› Smallest SOT23 package
› Dedicated products for industrial applications (TLI496x)
› AEC-Q100 qualified
› Electrical drives
Applications
› Window lier (index counting)
› Power closing (index counting)
› Gear stick (position detection)
› Seat belt (position detection)
› BLDC commutation
(e.g. wiper seat belt pretentioner, pump, seating)
› Service robots
› Power tools
› White goods
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
284
285
XENSIV™ magnetic current sensors
High-precision current sensor for industrial
applications - based on Hall technology
TLI4970: the miniaturization advantage
TLI4970 is a high-precision current sensor for industrial applications, based on our proven Hall technology. The
coreless concept significantly reduces footprint compared with existing solutions. Infineon's current sensor is an
easy-to-use, fully-digital solution, which does not require external calibration or additional parts such as A/D
converters, 0 pAmps or reference voltage. It thus significantly reduces overall implementation eort, as well as PCB
space and cost. The dierential measurement principle integrated in the TLI4970 sensor suppresses interference
caused by external magnetic fields. Accordingly, the sensor achieves an extremely low oset of just 25 mA. With
conventional current measurement principles, the measuring accuracy is always governed by the ambient conditions
(e.g. the temperature).
TLI4970 is more accurate than existing open-loop and comparable to closed-loop systems. It also provides additional
functions such as fast overcurrent detection and programmable filter, yet it has a significantly smaller footprint and
lower power consumption.
Infineon's sensor is extremely robust against external magnetic fields thanks to implemented stray field suppression,
and is also suitable for fast overcurrent detection at a pre-configurable level. This allows the control unit to switch o
independently of the main measurement path and protect power consumers from damage.
www.infineon.com/current-sensor
Product Accuracy1) Current range [A] Bandwidth [kHz] Resolution
[mA/LSB]
Automotive Industrial Package
TLI4970-D050T4 ±1.6 ±50 18 12.5 – ✓ TISON-8
TLI4970-D050T5 ±3.5 ±50 18 12.5 – ✓ TISON-8
TLI4970-D025T4 ±1.6 ±25 18 6.25 – ✓ TISON-8
TLI4970-D025T5 ±3.5 ±25 18 6.25 – ✓ TISON-8
1) Total error over lifetime and temperature
Features
› Fully calibrated digital output
› High accuracy over life time due to on-chip
temperature and stress compensation
› Programmable low-pass filter for measuring
current (0 to 18 kHz)
› Fast, configurable overcurrent detector (< 1.8 µs typ.)
› Inherent magnetic stray field suppression
› Small package size and weight for SMD mounting
Applications (AC and DC current measurement)
› Photovoltaic and general purpose inverters
› Power supplies (SMPS)
› Battery chargers
› Lighting applications
› Electrical drives
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
285
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Automotive Industrial Consumer Package
TLE4961-1M/L Latch 2.0 -2.0 4.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-2M Latch 5.0 -5.0 10.0 ✓ ✓ ✓ SOT23
TLE4961-3M/L Latch 7.5 -7.5 15.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4964-1M Switch 18.0 12.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-2M Switch 28.0 22.5 5.5 ✓ ✓ ✓ SOT23
TLE4964-3M Switch 12.5 9.5 3.0 ✓ ✓ ✓ SOT23
TLE4964-5M Switch 7.5 5.0 2.5 ✓ ✓ ✓ SOT23
TLE4968-1M/L Bipolar 1.0 -1.0 2.0 ✓ ✓ ✓ SOT23/SSO-3-2
TLE4961-5M Latch 15.0 -15.0 30.0 ✓ ✓ ✓ SOT23
TLE4961-4M Latch 10.0 -10.0 20.0 ✓ ✓ ✓ SOT23
TLE4964-4M Switch 10.0 8.5 1.5 ✓ ✓ ✓ SOT23
TLE4964-6M Switch 3.5 2.5 1.0 ✓ ✓ ✓ SOT23
TLV4964-1M Switch 18.0 12.5 5.5 – – ✓ SOT23
TLV4964-2M Switch 28.0 22.5 5.5 – – ✓ SOT23
TLI4961-1M/L Latch 2.0 -2.0 4.0 – ✓ ✓ SOT23/SSO-3-2
TLV4961-3M Latch 7.5 -7.0 15.0 – – ✓ SOT23
XENSIV™ magnetic position sensors
Hall switches
The energy-saving option with excellent accuracy and robustness
TLE/TLI/TLV4961/64/6: Energy-eicient Hall switch family for up to 32 V
The TLE/TLI/TLV496x-xM/L family of Hall switches saves energy and enables designers to create precise, compact
systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut energy
consumption by up to 50 percent compared with similar competitor products. Thanks to its small magnetic hysteresis,
the family paves the way for precise switching points in systems. The integrated temperature profile compensates
magnetic dris and enables stable performance over temperature and lifetime.
TLE/TLI/TLV496x-xM products come in the smallest SOT23 package, thus reducing height by 10 percent compared with
predecessor products. The sensors also feature an integrated functionality test for better system control.
www.infineon.com/Hall-switches
Features
› Current consumption of just 1.6 mA
› 3 to 32 V supply voltage range (over voltage up to 42 V)
› 7 kV ESD protection (HBM)
› Overtemperature and overcurrent protection
› Temperature compensation
› Smallest SOT23 package
› Dedicated products for industrial applications (TLI496x)
› AEC-Q100 qualified
› Electrical drives
Applications
› Window lier (index counting)
› Power closing (index counting)
› Gear stick (position detection)
› Seat belt (position detection)
› BLDC commutation
(e.g. wiper seat belt pretentioner, pump, seating)
› Service robots
› Power tools
› White goods
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
287
XENSIV™ magnetic position sensors
TLE4966
Two-in-one double Hall sensor
Features
› Two Hall probes
› Excellent matching between the two Hall probes
› Hall plate distance of 1.45 mm
› Industry standard
› Outstanding quality
› Information on direction and speed
› TSOP6 package
› AEC-Q100 qualified
Applications
› Window lier
› Sunroof
› Automatic tailgate
› Automated doors
› Sun blinds
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Automotive Package
TLE4966K/L Double Hall, speed and direction output 7.5 -7.5 15 ✓ TSOP6/SSO-4-1
TLE4966-2K Double Hall, two independent outputs 7.5 -7.5 15 ✓ TSOP6
TLE4966-3K Double Hall, speed and direction output 2.5 -2.5 5 ✓ TSOP6
TLE4966V-1K Vertical double Hall, speed and direction output 2.5 -2.5 5 ✓ TSOP6
www.infineon.com/Hall-switches
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
286
287
XENSIV™ magnetic position sensors
TLE/TLI4963/65-xM
5 V high-precision automotive/industrial Hall-eect sensors
By oering an excellent magnetic behavior Infineon’s switches are ideally suited for:
› Index counting application with a pole wheel
› Rotor position detection (BLDC motors)
› Open/close detection
TLV496x-xTA/B
Precision Hall-eect sensor for consumer applications in leaded package
Features
› 3.0 to 5.5 V operating supply voltage
› Low current consumption 1.4 mA
› ESD protection 4 kV HBM
› Active error compensation (chopped)
› High stability of magnetic thresholds
› Low jitter (typ. 0.35 μs)
› Operating temperature range:
– from -40 to +170°C (TLE496x-xM)
– from -40 to +125°C (TLI496x-xM)
› Small SMD package SOT23
› TLE: AEC-Q100 qualified
› TLI: JESD47 qualified
Features
› 3.0 to 26 V operating supply voltage
› Low current consumption 1.6 mA
› ESD protection 4 kV HBM
› Operating temperature range from -40 to +125 °C
› Leaded package TO92S
Applications
› BLDC motor commutation for consumer
devices (e.g. e-bikes, fans, aircons)
› Position detection e.g. flaps and
control buttons
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Automotive Industrial Package
TLE4963-1M Latch 2.0 -2.0 4.0 ✓ – SOT23
TLE4963-2M Latch 5.0 -5.0 10.0 ✓ – SOT23
TLE4965-5M Unipolar switch 7.5 5.0 2.5 ✓ – SOT23
TLI4963-1M Latch 2.0 -2.0 4.0 – ✓ SOT23
TLI4963-2M Latch 5.0 -5.0 10.0 – ✓ SOT23
TLI4965-5M Unipolar switch 7.5 5.0 2.5 – ✓ SOT23
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Consumer Industrial Package
TLV4961-1TA Latch 2.0 -2.0 4.0 ✓ TO92S-3-1 TO92S-3-1
TLV4961-1TB Latch 2.0 -2.0 4.0 ✓ TO92S-3-2 TO92S-3-2
TLV4961-3TA Latch 7.5 -7.5 15.0 ✓ TO92S-3-1 TO92S-3-1
TLV4961-3TB Latch 7.5 -7.5 15.0 ✓ TO92S-3-2 TO92S-3-2
TLV4964-4TA Unipolar switch 10.0 8.5 1.5 ✓ TO92S-3-1 TO92S-3-1
TLV4964-4TB Unipolar switch 10.0 8.5 1.5 ✓ TO92S-3-2 TO92S-3-2
TLV4964-5TA Unipolar switch 7.5 5.0 2.5 ✓ TO92S-3-1 TO92S-3-1
TLV4964-5TB Unipolar switch 7.5 5.0 2.5 ✓ TO92S-3-2 TO92S-3-2
TLV4968-1TA Latch 1.0 -1.0 2.0 ✓ TO92S-3-1 TO92S-3-1
TLV4968-1TB Latch 1.0 -1.0 2.0 ✓ TO92S-3-2 TO92S-3-2
www.infineon.com/Hall-switches
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
287
XENSIV™ magnetic position sensors
TLE4966
Two-in-one double Hall sensor
Features
› Two Hall probes
› Excellent matching between the two Hall probes
› Hall plate distance of 1.45 mm
› Industry standard
› Outstanding quality
› Information on direction and speed
› TSOP6 package
› AEC-Q100 qualified
Applications
› Window lier
› Sunroof
› Automatic tailgate
› Automated doors
› Sun blinds
Product Type Operating point BOP Release point BRP Hysteresis ΔBHY Automotive Package
TLE4966K/L Double Hall, speed and direction output 7.5 -7.5 15 ✓ TSOP6/SSO-4-1
TLE4966-2K Double Hall, two independent outputs 7.5 -7.5 15 ✓ TSOP6
TLE4966-3K Double Hall, speed and direction output 2.5 -2.5 5 ✓ TSOP6
TLE4966V-1K Vertical double Hall, speed and direction output 2.5 -2.5 5 ✓ TSOP6
www.infineon.com/Hall-switches
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
289
XENSIV™ magnetic position sensors
Dual linear Halls
Two sensors in one SMD package
The SMD package (TDSO) includes two independent sensors with separate power supply and separate signal outputs.
Due to special mounting technology, Infineon is able to keep dual-sensor package size very small to enable compact
PCB layouts and small magnet sizes.
Infineon oers a wide range of Hall sensors in the TDSO package. The combination of two sensors in one package
oers sensors redundancy, a feature which is especially interesting for new generation EPS steering systems with
increased ISO26262 requirements and other safety critical applications. All sensors are automotive qualified.
Features
› Two sensors in one package
› Separate power supply and signal output
› AEC-Q100 qualified
› Temperature range from -40 to +125°C
› Outstanding quality
› Single-sensor versions available
› 16-pin and 8-pin versions available
› ISO26262 ready
Automotive applications
› Steering torque systems
› Pedal position
› Any other safety critical application
www.infineon.com/linear-hall
Product Interface Dual-/single-sensor available Package
TLE4997A8D Analog Yes/yes TDSO-8
TLE4998P8D PWM Yes/yes TDSO-8
TLE4998S8D SENT Yes/yes TDSO-8
TLE4998C8D SPC Yes/yes TDSO-8
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
288
289
XENSIV™ magnetic position sensors
Linear Halls
TLE499x family: programmable analog/digital linear Hall sensor family
www.infineon.com/linear-hall
Product Programmable Number of pins Sensitivity Magnetic oset Supply voltage
(extended range)
Automotive Interface Package
TLE4997 EEPROM 3/
Single die SMD 8
±12.5 to ±300 < ±400 µT 5 V ±10% (7 V) ✓Analog SSO-3-10 TDSO-8
TLE4998P EEPROM 3/4/
Single die SMD 8
±0.2 to ±6%/mT < ±400 µT 5 V ±10% (16 V)
✓
PWM SSO-3-10 SSO-4-1
SSO-3-9 (2 capacitors)
TDSO- 8
TLE4998S EEPROM 3/4/
Single die SMD 8
±8.2 to ±245 LSB/mT < ±400 µT 5 V ±10% (16 V)
✓
SENT SSO-3-10 SSO-4-1
SSO-3-9 (2 capacitors)
TDSO-8
TLE4998C EEPROM 3/4/
Single die SMD 8
±8.2 to ±245 LSB/mT < ±400 µT 5 V ±10% (16 V)
✓
SPC SSO-3-10 SSO-4-1
SSO-3-9 (2 capacitors)
TDSO-8
Features
› Best-in-class accuracy with low dri of output
signal temperature range lifetime (including stress
compensation in TLE4998)
› Programmable transfer function (gain, oset),
clamping, bandwidth and temperature characteristics
› AEC-Q100 qualified
› Available in various packages including SSO-3-9
with two integrated capacitors to improve ESD and
ESC behavior
› Dual-die SMD package
› ISO26262 ready
Applications
› Detecting linear and angular position
› Detecting pedal and throttle position
› Steering torque measurement
› Headlight leveling
› High-current sensing
› Seat position and occupant detection
› Suspension control
› Detecting gear stick/lever positions
› Detecting liquid levels in fuel tanks
› Current sensing e.g. for battery management
Infineon’s family of TLE499x linear Hall ICs is tailored to the needs of highly accurate angular and linear position
detection and current measurement applications. Each product measures the vertical component of a magnetic field
and outputs a signal that is directly proportional to the magnetic field. These programmable linear Hall sensors come
with dierent interface options: TLE4997 features ratiometric analog output, while TLE4998P comes with pulse width
modulation (PWM), TLE4998S with single edge nibble transmission (SENT) and TLE4998C with short PWM codes (SPC).
These high-precision 12-bit resolution linear Hall sensors feature EEPROM memory for flexible programming across a
wide range of parameters.
Thanks to digital signal processing based on a 20-bit DSP architecture plus digital temperature compensation,
these sensors deliver outstanding temperature stability compared with similar compensation methods. TLE4998 also
includes stress compensation to withstand stress eects from the package, such as moisture, thus ensuring best-in-class
accuracy over the device’s lifetime.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
289
XENSIV™ magnetic position sensors
Dual linear Halls
Two sensors in one SMD package
The SMD package (TDSO) includes two independent sensors with separate power supply and separate signal outputs.
Due to special mounting technology, Infineon is able to keep dual-sensor package size very small to enable compact
PCB layouts and small magnet sizes.
Infineon oers a wide range of Hall sensors in the TDSO package. The combination of two sensors in one package
oers sensors redundancy, a feature which is especially interesting for new generation EPS steering systems with
increased ISO26262 requirements and other safety critical applications. All sensors are automotive qualified.
Features
› Two sensors in one package
› Separate power supply and signal output
› AEC-Q100 qualified
› Temperature range from -40 to +125°C
› Outstanding quality
› Single-sensor versions available
› 16-pin and 8-pin versions available
› ISO26262 ready
Automotive applications
› Steering torque systems
› Pedal position
› Any other safety critical application
www.infineon.com/linear-hall
Product Interface Dual-/single-sensor available Package
TLE4997A8D Analog Yes/yes TDSO-8
TLE4998P8D PWM Yes/yes TDSO-8
TLE4998S8D SENT Yes/yes TDSO-8
TLE4998C8D SPC Yes/yes TDSO-8
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
291
iTMR based angle sensors
Tunneling Magneto Resisitive (iTMR) technology is oering high sensing sensitivity with a high output voltage,
reducing the need for an internal amplifier. Thus, the sensor can be connected directly to the microcontroller without
any further amplification. In addition, iTMR technology shows a very low temperature dri, reducing external
calibration and compensation eorts. The iTMR technology is also well known for its low current consumption.
www.infineon.com/angle-sensors
TLE5501
With the TLE5501 products, Infineon is currently launching the first angle sensor products based on
iTMR technology.
TLE5501 is available in two versions.
TLE5501 - product versions with dierent pin out:
› TLE5501 E0001: pin-compatible to TLE5009
automotive qualified acc. AEC-Q100
› TLE5001 E0002: decoupled bridges for redundant external
angle calculation and highest diagnostic coverage,
realizing ISO26262-compliant development ASIL D
Features
› Large output signals of up to 0.37 V/V for direct microcontroller connection
› Discrete bridge with dierential sine and cosine output
› Very low supply current: ~2 mA
› Magnetic field range (20-100 mT)
› Typ. angle error ~ 1.0 ° (overtemperature and lifetime)
› DSO-8 package
› AEC-Q100, grade 0: TA = -40°C to 150°C (ambient temperature)
› For TLE5501 E0002:
– Reaching ASIL D with just one single sensor chip
– ISO26262-compliant development ASIL D
Applications
› Steering angle sensor
› BLDC motor commutation (e.g. wipers, pumps and actuators)
› Angular position sensing for e.g. robotics or gimbal
› Electric motors
› Industrial automation
› Safety applications
XENSIV™ magnetic position sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
290
291
Angle sensors
Compact designs in small outline packages
Highest variety - low end to high end, standardized and specialized in all four magnetic
technologies: Hall, GMR, AMR and TMR
Infineon's new magnetic sensor products TLE5501, are fast analogue TMR-based angle sensors dedicated to automotive
applications. Their fields of use range from steering angle applications, with the highest functional safety requirements,
to motors for wipers, pumps and actuators and electric motors in general. They are also ready to be used in industrial
and consumer applications like robotics or gimbal. Angle sensors detect the orientation of an applied magnetic field by
measuring sine and cosine angle components with monolithically integrated magneto resistive elements.
Infineon's iGMR sensors are ideal for applications with a wide angle range, such as BLDC motors or steering sensors.
They are pre-calibrated and ready-to-use. Dierent levels of signal processing integration enable designers to optimize
system partitioning. The XENSIV™ iAMR sensors also perfectly fit applications with the highest accuracy requirements,
as they oer best performance over temperature, lifetime and magnetic field range.
SPI = Serial peripheral interface
IIF = Incremental interface
PWM = Pulse width modulation
www.infineon.com/angle-sensors
Product Technology Die configuration ISO26262 Sin/cos output Angle output Second interface Accuracy Package
TLE5009 GMR Single die Ready Analog sin/cos – – 0.9° DSO-8
TLE5009A16(D) GMR Dual die Ready Analog sin/cos – – 1.0° TDSO-16
TLE5011 GMR Single die Ready SSC (SPI) – – 1.6° DSO-8
TLI5012B GMR Single die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.9° DSO-8
TLE5012B(D) GMR Single and dual die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.0° DSO-8/ TDSO-16
TLE5014C16(D) GMR Single and dual die Compliant – SPC – 1.0° TDSO-16
TLE5014P16(D) GMR Single and dual die Compliant – PWM – 1.0° TDSO-16
TLE5014S16(D) GMR Single and dual die Compliant – SENT – 1.0° TDSO-16
TLE5014SP16(D) GMR Single and dual die Compliant – SPI – 1.0° TDSO-16
TLE5109A16(D) AMR Single and dual die Ready Analog sin/cos – – 0.5° TDSO-16
TLE5309D AMR + GMR Dual die Ready Analog sin/cos SSC (SPI) – AMR 0.5°, GMR 1.0° TDSO-16
TLE5501 TMR Single die Compliant Analog sin/cos – – 1.0° DSO-8
iGMR, iAMR and iTMR based angle sensors
Diverse redundant sensor with analog and digital interface
XENSIV™ magnetic position sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
291
iTMR based angle sensors
Tunneling Magneto Resisitive (iTMR) technology is oering high sensing sensitivity with a high output voltage,
reducing the need for an internal amplifier. Thus, the sensor can be connected directly to the microcontroller without
any further amplification. In addition, iTMR technology shows a very low temperature dri, reducing external
calibration and compensation eorts. The iTMR technology is also well known for its low current consumption.
www.infineon.com/angle-sensors
TLE5501
With the TLE5501 products, Infineon is currently launching the first angle sensor products based on
iTMR technology.
TLE5501 is available in two versions.
TLE5501 - product versions with dierent pin out:
› TLE5501 E0001: pin-compatible to TLE5009
automotive qualified acc. AEC-Q100
› TLE5001 E0002: decoupled bridges for redundant external
angle calculation and highest diagnostic coverage,
realizing ISO26262-compliant development ASIL D
Features
› Large output signals of up to 0.37 V/V for direct microcontroller connection
› Discrete bridge with dierential sine and cosine output
› Very low supply current: ~2 mA
› Magnetic field range (20-100 mT)
› Typ. angle error ~ 1.0 ° (overtemperature and lifetime)
› DSO-8 package
› AEC-Q100, grade 0: TA = -40°C to 150°C (ambient temperature)
› For TLE5501 E0002:
– Reaching ASIL D with just one single sensor chip
– ISO26262-compliant development ASIL D
Applications
› Steering angle sensor
› BLDC motor commutation (e.g. wipers, pumps and actuators)
› Angular position sensing for e.g. robotics or gimbal
› Electric motors
› Industrial automation
› Safety applications
XENSIV™ magnetic position sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
293
The TLV493D-A1B6 sensor realizes an accurate three-dimensional sensing with extremely low power consumption in
a small 6-pin package. Capable of detecting the magnetic field in the x, y, and z-direction, the sensor is ideally suited
for the measurement of linear, rotation or 3 dimensional movements. Thanks to its small package and low power
consumption, the TLx493D-AxB6 can be used in new applications, replacing potentiometer and optical solutions.
Featuring contactless position sensing and high temperature stability of the magnetic threshold, the sensor allows
systems getting smaller, more accurate and more robust.
While the TLV493D-A1B6 just supports a typical value for the linear magnetic range of ±130 mT, the TLI493D-A2B6
specification
includes also a minimum value of ±160 mT.
With the TLI493D-A2B6,s a broader microcontroller compatibility as well an enhanced feature set is included.
1) Half range mode
Features
› 3D magnetic sensing
› Integrated temperature sensing
› Low current consumption
– 7 nA in power-down mode
– 10 μA in ultralow power mode
› 2.8 to 3.5 V operating supply voltage
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement up to ±160 mT
› JESD47 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 65 μT/LSB to 130 μT
› Operating temperature range from -40 to +125°C
New features
› Sensor address read back
› Short mode range setting, focusing on the half of the
magnetic
range, ensuring higher accuracy
› Higher update frequency allows for an application
field that requires faster update speed
› Angular mode (for x and y read-out only)
Applications
› Anti tempering protection in smart meters
› Joysticks e.g. for medical equipment, cranes,
CCTV-control, game consoles
› Control elements e.g. white goods multifunction knobs
XENSIV™ magnetic position sensors
3D magnetic sensors
TLV493D-A1B6/TLI493D-A2B6 for consumer and industrial market
www.infineon.com/3dmagnetic
Rotation movement 3D movement Linear movement
Product Temperature
range
Qualification Linear magnetic
range
Resolution IDD Update rate Package Ordering code
TLV493D-A1B6 -40 … 125°C JESD47 ±130 mT (typ) 98 μT/LSB 7 nA – 3.7 mA 10 Hz – 3.3 kHz TSOP6 SP001286056
TLI493D-A2B6 -40 … 105°C JESD47 ±160 mT (min)
±100 mT (min)
130 μT/LSB
(65 μT/LSB)1)
7 nA – 3.3 mA 10 Hz – 8.4 kHz TSOP6 SP001689844
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
292
293
TLE5014(D)
Digital iGMR sensor with an easy-to-use plug-and-play concept for highest functional safety applications
All XENSIV™ TLE5014 angle sensors are available as single and dual die products. The products come pre-configured
and pre-calibrated as plug-and-play sensors and are easy to use. Customers can choose between the interfaces SENT,
PWM, SPC an SPI. On top of those protocol options, the sensors can be adapted to any kind of application setup via
their programmable E²PROM interfaces. TLE5014 magnetic angle sensors meet ISO26262 ASIL C for the single die
and ISO26262 ASIL D for the dual die versions. All products are ready for applications with the highest functional
safety requirements. The sensors show an extremely small angle error of less than 1° across the entire temperature
profile and lifetime. This is particularly helpful in applications with the need for very accurate position sensing such
as steering angle sensing or motor commutation. Further application areas range from rotor position measurement,
electric power steering (EPS), pedal position to any other kind of position measurement.
Features
› Easy-to-use, plug-and-play sensors, pre-configured and pre-calibrated
› Oering high flexibility:
– Available as single and dual die products
– 12bit digital interface with protocol options PWM, SENT, SPC and SPI
– E2 PROM and look-up table for customer configuration and calibration
› High angle accuracy: max. 1.0° over temperature and lifetime
› High voltage capability up to 26 V
› Development fully compliant with ISO26262
– Developed acc. ASIL D level
– Dual die sensors reaching ASIL D, single die sensors ASIL-C metrics
› Safety manual and safety analysis summary report available on request
Applications
› Steering angle sensing (SAS)
› Motor commutation
› Rotor position measurement
› Pedal position
› Safety applications
› Any other kind of high-accuracy position measurement
TLE5109A16(D)
Analog iAMR sensor with temperature compensation
Features
› Features a dierential or single-ended analog interface for sine and cosine values
› Internal temperature dri compensation for gain and oset
› Also available as a dual-sensor package
› ISO26262 ready
› Typical 0.1” angle error over lifetime and temperature range aer compensation (max 0.5”)
› Available as single and dual die product
S
N
X SPI
Y
CORDIC
A/D
A/D
co
s
sin
X
Y
S
N
XENSIV™ magnetic position sensors
www.infineon.com/angle-sensors
*Giant Magneto resistance
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
293
The TLV493D-A1B6 sensor realizes an accurate three-dimensional sensing with extremely low power consumption in
a small 6-pin package. Capable of detecting the magnetic field in the x, y, and z-direction, the sensor is ideally suited
for the measurement of linear, rotation or 3 dimensional movements. Thanks to its small package and low power
consumption, the TLx493D-AxB6 can be used in new applications, replacing potentiometer and optical solutions.
Featuring contactless position sensing and high temperature stability of the magnetic threshold, the sensor allows
systems getting smaller, more accurate and more robust.
While the TLV493D-A1B6 just supports a typical value for the linear magnetic range of ±130 mT, the TLI493D-A2B6
specification
includes also a minimum value of ±160 mT.
With the TLI493D-A2B6,s a broader microcontroller compatibility as well an enhanced feature set is included.
1) Half range mode
Features
› 3D magnetic sensing
› Integrated temperature sensing
› Low current consumption
– 7 nA in power-down mode
– 10 μA in ultralow power mode
› 2.8 to 3.5 V operating supply voltage
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement up to ±160 mT
› JESD47 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 65 μT/LSB to 130 μT
› Operating temperature range from -40 to +125°C
New features
› Sensor address read back
› Short mode range setting, focusing on the half of the
magnetic
range, ensuring higher accuracy
› Higher update frequency allows for an application
field that requires faster update speed
› Angular mode (for x and y read-out only)
Applications
› Anti tempering protection in smart meters
› Joysticks e.g. for medical equipment, cranes,
CCTV-control, game consoles
› Control elements e.g. white goods multifunction knobs
XENSIV™ magnetic position sensors
3D magnetic sensors
TLV493D-A1B6/TLI493D-A2B6 for consumer and industrial market
www.infineon.com/3dmagnetic
Rotation movement 3D movement Linear movement
Product Temperature
range
Qualification Linear magnetic
range
Resolution IDD Update rate Package Ordering code
TLV493D-A1B6 -40 … 125°C JESD47 ±130 mT (typ) 98 μT/LSB 7 nA – 3.7 mA 10 Hz – 3.3 kHz TSOP6 SP001286056
TLI493D-A2B6 -40 … 105°C JESD47 ±160 mT (min)
±100 mT (min)
130 μT/LSB
(65 μT/LSB)1)
7 nA – 3.3 mA 10 Hz – 8.4 kHz TSOP6 SP001689844
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
295
www.infineon.com/magnetic-sensors
Magnetic speed sensors
Easy-to-use, robust and cost-eective sensors for speed measurement
Infineon's Hall- and GMR-based magnetic speed sensors are designed to measure speed in safety and powertrain
applications such as speedometers, ABS, camshas/crankshas and automatic transmissions. They are also used
in similar applications in the industrial sector. The sensors use a ferromagnetic gear tooth or encoder structure to
measure linear or rotational speed and position. Hall sensor measuring rotational speed with a gear tooth and a
magnetic encoder wheel. The majority of sensors also feature additional benefits such as integrated capacitors (C-
types) for high EMC robustness and the highest levels of ESD protection.
Modern powertrain systems rely on magnetic speed sensors, along with automotive pressure sensors, to achieve the
required CO2 targets and smart powertrain solutions. Infineon oers a broad variety of magnetic speed sensors for
camsha, cranksha and transmission applications.
This sensor is specially designed to provide an easy-to-use, robust and cost-eective solution for vehicle or industrial
speed sensing applications. The TLE4922 can, therefore, be back-biased using a simple, low-cost bulk magnet, while
providing a good air gap performance and switching accuracy. Its hidden adaptive hysteresis and calibration algorithm
enable good accuracy over air gap jumps and immunity to vibration and run-out events.
TLE4922
Highly robust, easy-to-use mono-Hall speed sensor with twist-independent mounting
Features
› Large operating air gap capability
› Twist-independent mounting
› Hidden adaptive hysteresis
› Low current consumption
› Reverse magnetic polarity capability
› Advanced protection technology
– Reverse voltage protection at VS-pin
– Short-circuit protection
– Overtemperature protection
› Wide operating temperature ranges of -40°C ≤ Tj ≤ ±150°C
› High ESD robustness up to ±4 kV HBM
› 3-wire PWM voltage interface
Applications
› Two-wheeler
› Automotive vehicle speed
XENSIV™ magnetic speed sensors
3D magnetic sensors
25
Product Temperature
range
Qualification
Linear
magnetic
range
Resolution IDD Update rate Wake-
up
Package
Ordering
code
TLE493D-A2B6
-40 … 125°C
AEC-Q100 ±160 mT (min) 130 µT/LSB
(65µT/LSB)1)
7 nA – 3.3 mA 10 Hz – 8.4 kHz No TSOP6 SP001689848
TLE493D-W2B6 A0
TLE493D-W2B6 A1
TLE493D-W2B6 A2
TLE493D-W2B6 A3
-40 … 125°C
AEC-Q100 ±160 mT (min)
±100 mT (min)
130 µT/LSB
(65µT/LSB)1) 7 nA – 3.3 mA 0.05 Hz – 8.4 kHz Yes TSOP6
SP001655334
SP001655340
SP001655344
SP001655348
1) Half range mode
TLE493D-A2B6/W2B6
3D magnetic sensors for automotive low-power applications
The TLE493D-x2B6 enables for all kind of automotive control
element applications within the passenger compartment
or under the hood with a temperature range of -40 to +125°C
with linear magnetic range requirements up to ±160 mT.
www.infineon.com/3Dmagnetic
Features
› 3D magnetic sensing
› Integrated temperature sensing
› 2.8 to 3.5 V operating supply voltage
› Low current consumption
– 0.007 µA in power-down mode
– 10 µA in ultra-low power mode
– Up to 10 power modes
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement ±160 mT
› AEC-Q100 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 67 µT/LSB to 134 µT
› Operating temperature range up to -40 to +125°C
The TLE493D-A2B6 features include a sensor address read back feature for additional communication verification, a half
range mode focusing to half of the magnetic range ensuring higher accuracy and an angular mode (for x and y read out only).
With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature.
Four pre-programmed address options (A0-A3) will be available, enabling for a fast start up initialization, when used in I2C
bus configurations. It also includes enhanced test options and a safety documentation is available to enable the usage of
this sensor in the context of ASIL B systems.
Applications
› Control elements for infotainment/navigation systems, air
conditions, multifunctional steering wheels, seat controls
› Top column modules e.g. direction indicator,
wiper control
› Gear stick position sensing
Sensor_Solutions_BR-2018.indb 25 23.07.2018 15:55:49
The XENSIV™ sensor TLE493D-A2B6 features include a sensor address read-back feature for additional communication
verification, a half range mode focusing to half of the magnetic range, ensuring higher accuracy and an angular mode (for x
and y readout only).
With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature. Four
pre-programmed address options (A0-A3) will be available, enabling for a fast start-up initialization, when used in I
2
C bus
configurations. It also includes enhanced test options, and a safety documentation is available to enable the usage of this
sensor in the context of ASIL B systems.
Applications
› Control elements for infotainment/navigation systems, air conditions, multifunctional steering wheels, seat controls
› Top column modules e.g. direction indicator, wiper control
› Gear stick position sensing
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
294
295
www.infineon.com/3dmagnetic
3D magnetic sensors
TLE493D-A2B6/W2B6 for automotive low power applications
Infineon's TLE493D-x2B6 enables for all kind of automotive control
element applications within the passenger compartment
or under the hood with a temperature range of -40 to +125°C,
with linear magnetic range requirements up to ±160 mT.
XENSIV™ magnetic position sensors
Features
› 3D magnetic sensing
› Integrated temperature sensing
› 2.8 to 3.5 V operating supply voltage
› Low current consumption
– 0.007 μA in power-down mode
– 10 μA in ultralow power mode
– Up to 10 power modes
› Digital output via a 2-wire standard I2C interface
› Bx, By and Bz linear field measurement ±160 mT
› AEC-Q100 qualified
› 12-bit data resolution for each measurement direction
› Various resolution options from 67 μT/LSB to 134 μT
› Operating temperature range from -40 to +125°C
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
295
www.infineon.com/magnetic-sensors
Magnetic speed sensors
Easy-to-use, robust and cost-eective sensors for speed measurement
Infineon's Hall- and GMR-based magnetic speed sensors are designed to measure speed in safety and powertrain
applications such as speedometers, ABS, camshas/crankshas and automatic transmissions. They are also used
in similar applications in the industrial sector. The sensors use a ferromagnetic gear tooth or encoder structure to
measure linear or rotational speed and position. Hall sensor measuring rotational speed with a gear tooth and a
magnetic encoder wheel. The majority of sensors also feature additional benefits such as integrated capacitors (C-
types) for high EMC robustness and the highest levels of ESD protection.
Modern powertrain systems rely on magnetic speed sensors, along with automotive pressure sensors, to achieve the
required CO2 targets and smart powertrain solutions. Infineon oers a broad variety of magnetic speed sensors for
camsha, cranksha and transmission applications.
This sensor is specially designed to provide an easy-to-use, robust and cost-eective solution for vehicle or industrial
speed sensing applications. The TLE4922 can, therefore, be back-biased using a simple, low-cost bulk magnet, while
providing a good air gap performance and switching accuracy. Its hidden adaptive hysteresis and calibration algorithm
enable good accuracy over air gap jumps and immunity to vibration and run-out events.
TLE4922
Highly robust, easy-to-use mono-Hall speed sensor with twist-independent mounting
Features
› Large operating air gap capability
› Twist-independent mounting
› Hidden adaptive hysteresis
› Low current consumption
› Reverse magnetic polarity capability
› Advanced protection technology
– Reverse voltage protection at VS-pin
– Short-circuit protection
– Overtemperature protection
› Wide operating temperature ranges of -40°C ≤ Tj ≤ ±150°C
› High ESD robustness up to ±4 kV HBM
› 3-wire PWM voltage interface
Applications
› Two-wheeler
› Automotive vehicle speed
XENSIV™ magnetic speed sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
297
XENSIV™ - Sensor 2GO kits
www.infineon.com/sensors2go
3D magnetic sensor 2GO kit features
› We oer three dierent derivatives
– TLE493D-A2B6 (three dimensional magnetic sensor)
– TLE493D-W2B6 (three dimensional magnetic sensor)
– TLV493D-A1B6 (three dimensional magnetic sensor)
› XMC1100 (ARM® Cortex™-M0 based)
› Onboard J-Link Lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI for free download
Current sensor 2GO kit features
› TLI4970-D050T4 (current sensor with digital interface)
› XMC1100 (ARM® Cortex®-M0 based)
› Onboard J-link lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI for free download
Speed sensor 2GO kit features
› Budget-priced evaluation board for speed sensing
› Complete speed sensor incl. back-bias magnet, fixing and cable
› TLE4922 (active mono cell Hall sensor)
› XMC1100 (ARM® Cortex™-M0 based)
› Onboard J-Link Lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI based tool for real in-application evaluation for free download
Sensor 2GO kits
Infineon's solutions for quick evaluation
Smallest, fully featured sensor 2GO evaluation kits for current, low-cost rotational speed, 3D magnetic sensors and
angle sensors with optional joystick adapter, rotation knob, linear slider and out-of-sha adapter, as well as digital
barometric air pressure sensor and XENSIV™ MEMS microphones.
› Plug-and-measure evaluation board
› First measurements possible within minutes
› Various mechanical adapters for 3D magnetic sensor available for quick evaluation
Infineon's XENSIV™ sensor 2GO kits are budget-priced evaluation boards that are already equipped with a sensor
combined with an ARM® Cortex®-M0 CPU. The sensor 2GO kits provide a complete set of onboard devices, including
an onboard debugger. Build your own application and gadget with the sensor 2GO kits. Our 2GO kits are ready-to-use,
plug-and-play boards.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
296
297
www.infineon.com/magnetic-sensors
The TLE4929 is an active Hall sensor ideally suited for cranksha applications and similar industrial applications, such
as speedometer or any speed sensor with high accuracy and low jitter capabilities.
TLE4929
Fully programmable cranksha sensor
Features
› Dierential Hall speed sensor to measure speed and position of
tooth/pole wheels
› Switching point in the middle of the tooth enables backward compatibility
› Robustness over magnetic stray-field due to dierential sensing principle
› Digital output signal with programmable output-protocol including
diagnosis interface
› Direction detection and stop-start-algorithm
› High accuracy and low jitter
› High sensitivity enable large air gap
› End-of-line programmable to adapt engine parameters
› Can be used as a dierential camsha sensor
› Automotive operating temperature range
Product Automotive Industrial Sensor technology AEC-Q100 qualified RoHS HAL free Product status
TLE4922 ✓ ✓ Mono-Hall ✓ ✓ ✓ In production
TLE4929 ✓ ✓ Dierential Hall ✓ ✓ ✓ In production
XENSIV™ magnetic speed sensors
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
297
XENSIV™ - Sensor 2GO kits
www.infineon.com/sensors2go
3D magnetic sensor 2GO kit features
› We oer three dierent derivatives
– TLE493D-A2B6 (three dimensional magnetic sensor)
– TLE493D-W2B6 (three dimensional magnetic sensor)
– TLV493D-A1B6 (three dimensional magnetic sensor)
› XMC1100 (ARM® Cortex™-M0 based)
› Onboard J-Link Lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI for free download
Current sensor 2GO kit features
› TLI4970-D050T4 (current sensor with digital interface)
› XMC1100 (ARM® Cortex®-M0 based)
› Onboard J-link lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI for free download
Speed sensor 2GO kit features
› Budget-priced evaluation board for speed sensing
› Complete speed sensor incl. back-bias magnet, fixing and cable
› TLE4922 (active mono cell Hall sensor)
› XMC1100 (ARM® Cortex™-M0 based)
› Onboard J-Link Lite debugger (realized with XMC4200 microcontroller)
› Power over USB (micro USB), ESD and reverse current protection
› GUI based tool for real in-application evaluation for free download
Sensor 2GO kits
Infineon's solutions for quick evaluation
Smallest, fully featured sensor 2GO evaluation kits for current, low-cost rotational speed, 3D magnetic sensors and
angle sensors with optional joystick adapter, rotation knob, linear slider and out-of-sha adapter, as well as digital
barometric air pressure sensor and XENSIV™ MEMS microphones.
› Plug-and-measure evaluation board
› First measurements possible within minutes
› Various mechanical adapters for 3D magnetic sensor available for quick evaluation
Infineon's XENSIV™ sensor 2GO kits are budget-priced evaluation boards that are already equipped with a sensor
combined with an ARM® Cortex®-M0 CPU. The sensor 2GO kits provide a complete set of onboard devices, including
an onboard debugger. Build your own application and gadget with the sensor 2GO kits. Our 2GO kits are ready-to-use,
plug-and-play boards.
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
299
www.infineon.com/sensors2go
MEMS 2GO
The flex evaluation kit allows simple and easy evaluation of
XENSIV™ MEMS microphone IM69D130. The flex board can be easily
connected to audio testing setup. The evaluation kit includes five IM69D130
mounted on flex board and one adapter board.
Features
› Quick and easy evaluation of XENSIV™ MEMS microphones
› Flex dimensions: 25 x 4.5 mm
› Adapter dimensions: 20 x 15 mm
Getting Started Box IoT
For fast, flexible and easy prototyping - never been easier
A box consists of:
› XENSIV™ magnetic position sensor TLV493D-A1B6
› Rotate knob – add-on component for 3D magnetic Hall sensor
› Joystick - add-on component for 3D magnetic Hall sensor
› OPTIGA™ Trust E – hardware security chip
› XENSIV™ pressure sensor DPS310 for consumer
› XMC 1100 Bootkit – 32-bit microcontroller based on ARM® Cortex®-M
form factor compatible with Arduino Uno
› XMC2Go (qty 2) – 32-bit microcontroller based on ARM® Cortex®-M
in Shield2Go form factor
› XENSIV™ magnetic current sensor TLI4970-D050T4 with integrated
current rail
› XENSIV™ MEMS microphone IM69D130
› ESP32 – Wemos form factor including BLE and WIFI functionality
› Dual-adapter Trust X – adapter for Infineon Shield2Go board with
Wemos form factor equipped with OPTIGA™ Trust X
› Triple-adapter – adapter for Infineon Shield2Go board form factor
compatible with Arduino Uno (alternatively: Grove Base_Shield_V2)
› USB-cable and soldering connectors
XENSIV™ - Sensor 2GO kits
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
298
299
XENSIV™ - Sensor 2GO kits
www.infineon.com/sensors2go
Add on components for 3D magnetic sensor 2GO kit
Joystick adapter
Product information:
› Easy mounting on 3D magnetic sensor 2GO
› First magnetic joystick measurements within minutes
› The user manual in the download area explains usage,
mounting and functionality
Rotate knob
Product information:
› Rotate and push button control element
› Simulates rotational and angle sensing movements
› The user manual in the download area precisely explains usage,
mounting and functionality and functionality
Linear slider
› Easy mounting on 3D Magnetic Sensor 2GO
› First magnetic linear evaluations within minutes
› Flexible setup: adaptable airgaps, two dierent magnetic strengths/
materials and distance limiters
Out of sha adapter for angle measurements
Product information:
› Easy mounting on all 3D magnetic sensor 2GO kits
› First angle measurement in out-of-sha configuration
› Three dierent out-of-sha configurations possible
› Magnetic rotation bar with ring magnet included
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
299
www.infineon.com/sensors2go
MEMS 2GO
The flex evaluation kit allows simple and easy evaluation of
XENSIV™ MEMS microphone IM69D130. The flex board can be easily
connected to audio testing setup. The evaluation kit includes five IM69D130
mounted on flex board and one adapter board.
Features
› Quick and easy evaluation of XENSIV™ MEMS microphones
› Flex dimensions: 25 x 4.5 mm
› Adapter dimensions: 20 x 15 mm
Getting Started Box IoT
For fast, flexible and easy prototyping - never been easier
A box consists of:
› XENSIV™ magnetic position sensor TLV493D-A1B6
› Rotate knob – add-on component for 3D magnetic Hall sensor
› Joystick - add-on component for 3D magnetic Hall sensor
› OPTIGA™ Trust E – hardware security chip
› XENSIV™ pressure sensor DPS310 for consumer
› XMC 1100 Bootkit – 32-bit microcontroller based on ARM® Cortex®-M
form factor compatible with Arduino Uno
› XMC2Go (qty 2) – 32-bit microcontroller based on ARM® Cortex®-M
in Shield2Go form factor
› XENSIV™ magnetic current sensor TLI4970-D050T4 with integrated
current rail
› XENSIV™ MEMS microphone IM69D130
› ESP32 – Wemos form factor including BLE and WIFI functionality
› Dual-adapter Trust X – adapter for Infineon Shield2Go board with
Wemos form factor equipped with OPTIGA™ Trust X
› Triple-adapter – adapter for Infineon Shield2Go board form factor
compatible with Arduino Uno (alternatively: Grove Base_Shield_V2)
› USB-cable and soldering connectors
XENSIV™ - Sensor 2GO kits
Infineon support for sensors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/sensors
www.infineon.com/microphones
www.infineon.com/magnetic-sensors
www.infineon.com/current-sensor
www.infineon.com/hall-switches
www.infineon.com/angle-sensors
www.infineon.com/3dmagnetic
www.infineon.com/pressuresensor
www.infineon.com/24GHz
www.infineon.com/pressure
2GO evaluation kits
www.infineon.com/sensors2go
Online simulation tools
www.infineon.com/cms/en/product/sensor/#!simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Sensors support
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
300
XENSIV™ - Shield2Go
Shield2Go boards and My IoT adapter
Easy evaluation for shorter time to market
www.infineon.com/2go
www.infineon.com/sensors2go
Infineon’s Shield2Go boards oer a unique customer and evaluation experience. The boards are equipped with a fea-
tured Infineon’s XENSIV™ sensor and come with a ready-to-use soware library for Arduino. Customers can now devel-
op their own system solutions by combining Shield2Go boards with Infineon My IoT adapter, which serves as a gateway
to external hardware solutions and popular IoT evaluation platforms such as Arduino and Raspberry PI. All this enables
the fastest evaluation and development of an IoT system on the market.
DPS310 Pressure Shield2Go
Featured product: XENSIV™
pressure sensor DPS310
OPN: S2GOPRESSUREDPS310TOBO1
Interfaces:
I2CSPI INT
PWM
UART
Analog
TLI4970 Current Sense Shield2Go
Featured product: XENSIV™ magnetic
current sensor TLI4970-D050T4
OPN: S2GOCURSENSETLI4970TOBO1
Interfaces:
I2C
SPI INT
UART
Analog
PWM
IM69D130 Microphone Shield2Go
Featured product: XENSIV™ MEMS
microphone IM69D130
OPN: S2GOMEMSMICIM69DTOBO1
Interfaces:
I2C
SPI
INT
PWM
UART
Analog
The My IoT adapter board enables designers to combine the Shield2Go
boards into a system. Infineon’s flexible evaluation boards are compatible
with the existing solutions on the market. My IoT adapters act as gateways
to external hardware solutions such as Arduino, one of the most common
IoT evaluation and prototyping platforms.
OPN: MYIOTADAPTERTOBO1
TLV493D 3DSense Shield2Go
Featured product: XENSIV™ magnetic
position sensor TLV493D-A1B6
OPN: S2GO3DSENSETLV493DTOBO1
Interfaces:
I2C
SPI
INT
PWM
UART
Analog
Infineon support for sensors
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/sensors
www.infineon.com/microphones
www.infineon.com/magnetic-sensors
www.infineon.com/current-sensor
www.infineon.com/hall-switches
www.infineon.com/angle-sensors
www.infineon.com/3dmagnetic
www.infineon.com/pressuresensor
www.infineon.com/24GHz
www.infineon.com/pressure
2GO evaluation kits
www.infineon.com/sensors2go
Online simulation tools
www.infineon.com/cms/en/product/sensor/#!simulation
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Sensors support
All products are RoHS Compliant.
IQFN-27-2 IQFN-30 (DrMOS 4x4) IQFN-31 (DrMOS 5x5) IQFN-36 IQFN-39 IQFN-40
27 3.3 x 6.0 x 0.9 30 4.0 x 4.0 x 1.0 31 5.0 x 5.0 x 0.8 36 7.5 x 6.0 x 0.9 39 5.0 x 6.0 x 0.9 40 6.0 x 6.0 x 0.8
SO-8/SO-8 dual SO-16/12 SO-14 SO-16 SO-18 DSO-12
8 5.0 x 6.0 x 1.75 12 10.0 x 6.0 x 1.75 14 8.75 x 6.0 x 1.75 16 10.0 x 6.0 x 1.75 18 12.8 x 10.3 x 2.65 12 10.3 x 7.8 x 2.6 (max)
DSO-16-30 (300 mil) DSO-24 SSOP-24 TDSO-16 SO-19 SO-20
16 10.3 x 7.5 x 2.35 24
10.5 x 15.6 x 2.65 (max)
24 6 x 8.65 x 1.75 (max) 16 5.0 x 6.0 x 1.2 19 12.8 x 10.3 x 2.65 20 12.8 x 10.3 x 2.65
DSO-28 SO-36 TSSOP-28 TSSOP-48 LFBGA-516-5 LFBGA-292-6
28 18.1 x 10.3 x 2.65 36 15.9 x 11.0 x 3.5 28 9.7 x 6.4 x 1.2 48 12.5 x 6.1 x 1.1 516 25.3 x 25.3 x 2.8 292 17.3 x 17.3 x 2.35
BGA-416-26 TFLGA-13-1 LQFP-176-22 LQFP-144-22 TQFP-144-27 TQFP-100-23
416 27.3 x 27.3 x 3.2 13 5 x 5 x 0.96 176 26.7 x 26.7 x 2.1 144 22.4 x 22.4 x 2.2 144 18.7 x 18.7 x 1.6 100 14.5 x 14.5 x 1.5
TQFP-80-7 VQFN-40-13 VQFN-48-60 VQFN-48-78 (LTI) VQFN-56-5/-6 Package (JEITA-code)
80 12.6 x 12.6 x 1.5 40 5 x 5 x 0.85 48 6 x 6 x 0.85 48 7 x 7 x 0.85 56 7 x 7 x 0.9 X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
www.infineon.com/packages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
303
Package overview
Packages
All products are RoHS Compliant.
DPAK (TO-252-2) DPAK (TO-252)
DPAK 5-pin (TO-252)
HDSOP-10-1 HDSOP-22-1 D2PAK (TO-263)
2 9.9 x 6.5 x 2.3 3 9.9 x 6.5 x 2.3 5 9.9 x 6.5 x 2.3 10 20.96 x 6.5 x 2.3 22 20.96 x 15.0 x 2.3 3 15.0 x 10.0 x 4.4
D2PAK (TO-263-2) TO263-7-11
TO263-7-12
TO263-7-13
D
2
PAK 7-pin (TO-263)
TO-Leadless (TOLL)
215.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 7 15.0 x 10.0 x 4.4 8 11.68 x 9.9 x 2.3
SC59 SOT-23 SOT-23-5 SOT-23-6 SOT-89 SOT-223
3 3.0 x 2.8 x 1.1 3 2.9 x 2.4 x 1.0 5 2.9 x 1.6 x 1.3 6 2.9 x 1.6 x 1.3 3 4.5 x 4.0 x 1.5 4 6.5 x 7.0 x 1.6
SOT223-3-1 SOT-323 SOT-363 TSOP6 PQFN 2x2 PQFN 2x2 dual
3 6.5 x 7.0 x 1.6 3 2.0 x 2.1 x 0.9 6 2.0 x 2.1 x 0.9 6 2.9 x 2.5 x 1.1 6 2.0 x 2.0 x 0.9 6 2.0 x 2.0 x 0.9
PQFN 3.3x3.3 SuperSO8 SuperSO8 dual SuperSO8 fused leads TDSON-8-47 TDSON-10-2
8 3.3 x 3.3 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 8 5.15 x 6.15 x 1.0 10 3.0 x 3.0 x 0.9
TDSON-10-7 TSDSON-8-25 fused leads TISON-8
TISON-8 (power stage 5x6)
TISON-8-4 (Power Block) TSON-8-1
10 3.0 x 3.0 x 0.9 8 3.3 x 3.3 x 1.0 8 7.0 x 7.0 x 1.0 8 5.0 x 6.0 x 1.0 8 5.0 x 6.0 x 1.0 8 3.0 x 3.0 x 1.0
TSON-8-3 ThinPAK 5x6 (TSON-8) TSON-10 TSNP-6-13 ThinPAK 8x8 (VSON-4) VDSON-8
8 5.0 x 6.0 x 1.0 8 5.0 x 5.0 x 1.0 10 3.3 x 3.3 x 1.0 6 1.5 x 1 x 0.375 4 8.0 x 8.0 x 1.0 8 4.0 x 4.0 x 0.9
WSON-6-1 WSON-8-3 WSON-10 DirectFET™ Small Can DirectFET™ Medium Can DirectFET™ Large Can
6 3 x 3 x 0.75 8 3 x 3 x 0.75 10 4.0 x 4.0 x 0.8 V 4.8 x 3.8 x 0.65 V 6.3 x 4.9 x 0.65 V 9.1 x 6.98 x 0.71
Package (JEITA-code)
X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
Surface mount device (SMD) technology
www.infineon.com/packages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
302
303
Package overview
All products are RoHS Compliant.
IQFN-27-2 IQFN-30 (DrMOS 4x4) IQFN-31 (DrMOS 5x5) IQFN-36 IQFN-39 IQFN-40
27 3.3 x 6.0 x 0.9 30 4.0 x 4.0 x 1.0 31 5.0 x 5.0 x 0.8 36 7.5 x 6.0 x 0.9 39 5.0 x 6.0 x 0.9 40 6.0 x 6.0 x 0.8
SO-8/SO-8 dual SO-16/12 SO-14 SO-16 SO-18 DSO-12
8 5.0 x 6.0 x 1.75 12 10.0 x 6.0 x 1.75 14 8.75 x 6.0 x 1.75 16 10.0 x 6.0 x 1.75 18 12.8 x 10.3 x 2.65 12 10.3 x 7.8 x 2.6 (max)
DSO-16-30 (300 mil) DSO-24 SSOP-24 TDSO-16 SO-19 SO-20
16 10.3 x 7.5 x 2.35 24
10.5 x 15.6 x 2.65 (max)
24 6 x 8.65 x 1.75 (max) 16 5.0 x 6.0 x 1.2 19 12.8 x 10.3 x 2.65 20 12.8 x 10.3 x 2.65
DSO-28 SO-36 TSSOP-28 TSSOP-48 LFBGA-516-5 LFBGA-292-6
28 18.1 x 10.3 x 2.65 36 15.9 x 11.0 x 3.5 28 9.7 x 6.4 x 1.2 48 12.5 x 6.1 x 1.1 516 25.3 x 25.3 x 2.8 292 17.3 x 17.3 x 2.35
BGA-416-26 TFLGA-13-1 LQFP-176-22 LQFP-144-22 TQFP-144-27 TQFP-100-23
416 27.3 x 27.3 x 3.2 13 5 x 5 x 0.96 176 26.7 x 26.7 x 2.1 144 22.4 x 22.4 x 2.2 144 18.7 x 18.7 x 1.6 100 14.5 x 14.5 x 1.5
TQFP-80-7 VQFN-40-13 VQFN-48-60 VQFN-48-78 (LTI) VQFN-56-5/-6 Package (JEITA-code)
80 12.6 x 12.6 x 1.5 40 5 x 5 x 0.85 48 6 x 6 x 0.85 48 7 x 7 x 0.85 56 7 x 7 x 0.9 X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
www.infineon.com/packages
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
303
Package overview
Infineon support for packages
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/packages
Videos
www.infineon.com/mediacenter
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
Packages support
www.infineon.com/packages
IPAK (TO251) IPAK SL (TO251 SL) I2PAK (TO262) TO220 real 2-pin TO220 2-pin TO220 3-pin
3 15.5 x 6.5 x 2.3 3 10.7 x 6.5 x 2.3 3 25.1 x 10 x 4.4 2 29.15 x 10.0 x 4.4 2 29.1 x 9.9 x 4.4 3 29.15 x 10.0 x 4.4
TO220 FullPAK
TO220 FullPAK Narrow Lead
TO220 FullPAK Wide Creepage
TO220-6-46 TO220-6-47 TO247
3 29.6 x 10.5 x 4.7 3 29.6 x 10.5 x 4.7 3 28.85 x 11 x 4.7 6 21.7 x 9.9 x 4.4 6 26.1 x 9.9 x 4.4 3 40.15 x 15.9 x 5.0
TO247-3-AI TO247 4-pin DIP-7 DIP-8 DIP-14 DIP-20
3 41.3 x 10.9 x 5.18 4 40.15 x 15.9 x 5.0 7 9.52 x 8.9 x 4.37 8 9.52 x 8.9 x 4.37 14 19.5 x 8.9 x 4.37 20 24.6 x 9.9 x 4.2
Super220 Super247 SSO-3-9 SSO-3-10 SSO-4-1 TO92S-3-1
3 28.25 x 10.5 x 4.5 3 34.6 x 15.6 x 5 3 A: 3.71 x 5.34 x 1
B: 2.68 x 5.34 x 1.2 3 4.06 x 1.5 x 4.05 4 5.34 x 1.0 x 3.71 3 4.0 x 1.52 x 3.15
TO92S-3-2 Package (JEITA-code)
3 4.0 x 1.52 x 3.15 X L x W x H
pin-count
V = Variable number of pins
All dimensions in mm
Through-hole device (THD) technology
All products are RoHS Compliant.
A
B
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETsXENSIV™ sensors Applications
304
Package overview
Infineon support for packages
Useful links and helpful information
Further information, datasheets and documents
www.infineon.com/packages
Videos
www.infineon.com/mediacenter
Packages Microcontrollers Gate driver ICsMotor control ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs
XENSIV™ sensors Applications
Packages support
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Part of your life. Part of tomorrow.
A world leader
in semiconductor solutions
Our mission
We make life
easier, safer
and greener.
Our values
We commit
We partner
We innovate
We perform
Our vision
We are the link between the
real and the digital world.
Service hotline
Infineon oers its toll-free 0800/4001 service hotline as one central number,
available 24/7 in English, Mandarin and German.
› Germany .................... 0800 951 951 951 (German/English)
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Published by
Infineon Technologies Austria AG
9500Villach, Austria
© 2019 Infineon Technologies AG.
All Rights Reserved.
Order number: B131-I0773-V1-7600-EU-EC-P
Date: 02 / 2019
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
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WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
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