74LVT125
3.3V Quad buffer (3-State)
Product specification
Supersedes data of 1995 Nov 14
IC23 Data Handbook
1998 Feb 19
INTEGRATED CIRCUITS
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
2
1998 Feb 19 853–1743 18991
FEATURES
•Quad bus interface
•3-State buffers
•Output capability: +64mA/-32mA
•TTL input and output switching levels
•Input and output interface capability to systems at 5V supply
•Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
•Live insertion/extraction permitted
•No bus current loading when output is tied to 5V bus
•Power-up 3-State
•Latch-up protection exceeds 500mA per JEDEC Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
DESCRIPTION
The LVT125 is a high-performance BiCMOS product designed for
VCC operation at 3.3V.
This device combines low static and dynamic power dissipation with
high speed and high output drive.
The 74LVT125 device is a quad buffer that is ideal for driving bus
lines. The device features four Output Enables (OE0, OE1, OE2,
OE3), each controlling one of the 3-State outputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS
Tamb = 25°C; GND = 0V TYPICAL UNIT
tPLH
tPHL Propagation delay
An to Yn CL = 50pF; VCC = 3.3V 2.7
2.9 ns
CIN Input capacitance VI = 0V or 3.0V 4 pF
COUT Output capacitance Outputs disabled; VO = 0V or 3.0V 8 pF
ICCZ Total supply current Outputs disabled;
VCC = 3.6V 0.13 mA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic SO –40°C to +85°C74LVT125 D 74LVT125 D SOT108-1
14-Pin Plastic SSOP –40°C to +85°C74LVT125 DB 74LVT125 DB SOT337-1
14-Pin Plastic TSSOP –40°C to +85°C74LVT125 PW 74LVT125PW DH SOT402-1
PIN CONFIGURATION
8
1
2
3
4
5
6
7
9
10
11
12
13
14
OE0
A0
Y0
OE1
A1
Y1
GND Y2
A2
OE2
Y3
A3
OE3
VCC
SV00001
LOGIC SYMBOL
23Y0
OE01
56Y1
OE1 4
98Y2
OE210
12 11 Y3
OE3 13
A0
A1
A2
A3
SV00002
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 3
LOGIC SYMBOL (IEEE/IEC)
1
2
4
5
10
9
13
12
3
EN
6
8
11
1
SV00003
FUNCTION TABLE (EACH BUFFER)
INPUTS OUTPUTS
OEn An Yn
L L L
L H H
H X Z
H = High voltage level
L = Low voltage level
X = Don’t care
Z = High impedance “Off” state
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
2, 5, 9, 12 A0 – A3 Data inputs
3, 6, 8, 11 Y0 – Y3 Data outputs
1, 4, 10, 13 OE0 – OE3Output enables
7 GND Ground (0V)
14 VCC Positive supply voltage
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL PARAMETER CONDITIONS RATING UNIT
VCC DC supply voltage –0.5 to +4.6 V
VIDC input voltage3–0.5 to +7.0 V
VOUT DC output voltage3Output in Off or High state –0.5 to +7.0 V
IO
DC out
p
ut current
Output in Low state 128 mA
I
OUT
DC
o
u
tp
u
t
c
u
rrent
Out in High State –64 mA
IIK DC input diode current VI < 0 –50 mA
IOK DC output diode current VO < 0 –50 mA
Tstg Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 4
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
MIN MAX
UNIT
VCC DC supply voltage 2.7 3.6 V
VIInput voltage 0 5.5 V
VIH High-level input voltage 2.0 V
VIL Low-level input voltage 0.8 V
IOH High-level output current –32 mA
IOL
Low-level output current 32
mA
I
OL Low-level output current; current duty cycle ≤ 50%, f ≥ 1kHz 64
mA
∆t/∆vInput transition rise or fall rate; outputs enabled 10 ns/V
Tamb Operating free-air temperature range –40 +85 °C
DC ELECTRICAL CHARACTERISTICS LIMITS
SYMBOL PARAMETER TEST CONDITIONS Temp = -40°C to +85°C UNIT
MIN TYP1MAX
VIK Input clamp voltage VCC = 2.7V; IIK = –18mA –0.9 –1.2 V
VCC = 2.7 to 3.6V ; IOH = –100µA VCC-0.2 VCC-0.1
VOH High-level output voltage VCC = 2.7V ; IOH = –8mA 2.4 2.5 V
VCC = 3.0V ; IOH = –32mA 2.0 2.2
VCC = 2.7V ; IOL = 100µA 0.1 0.2
VCC = 2.7V ; IOL = 24mA 0.3 0.5
VOL Low-level output voltage VCC = 3.0V ; IOL = 16mA 0.25 0.4 V
VCC = 3.0V ; IOL = 32mA 0.3 0.5
VCC = 3.0V ; IOL = 64mA 0.4 0.55
VCC = 0 or 3.6V ; V I = 5.5V All inputs 1 10
II
In
p
ut leakage current
VCC = 3.6V ; V I = VCC or GND Control pins ±0.1 ±1
µA
I
I
In ut
leakage
current
VCC = 3.6V ; V I = VCC
Data
p
ins4
0.1 1
µA
VCC = 3.6V ; V I = 0
Data
ins4
–1 -5
IOFF Output off current VCC = 0V; VI or VO = 0 to 4.5V 1±100 µA
6
VCC = 3V ; VI = 0.8V 75 150
IHOLD Bus Hold current A inputs
6
VCC = 3V ; VI = 2.0V –75 –150 µA
VCC = 0V to 3.6V ; V CC = 3.6V ±500
IEX Current into an output in the
High state when VO > VCC VO = 5.5V ; V CC = 3.0V 60 125 µA
IPU/PD Power up/down 3-State
output current3VCC ≤ 1.2V ; VO = 0.5V to VCC; VI = GND or VCC;
OE/OE = Don’t care ±1±100 µA
IOZH 3-State output high current VCC = 3.6V; VO = 3.0V 1 5 µA
IOZL 3-State output low current VCC = 3.6V; VO = 0.5V –1 –5 µA
ICCH VCC = 3.6V ; Outputs High, VI = GND or VCC, IO = 0 0.13 0.19
ICCL Quiescent supply current VCC = 3.6V ; Outputs Low, VI = GND or VCC, IO = 0 2 7 mA
ICCZ VCC = 3.6V ; Outputs Disabled; VI = GND or VCC, IO = 050.13 0.19
∆ICC Additional supply current per
input pin2VCC = 3V to 3.6V ; One input at V CC-0.6V,
Other inputs at VCC or GND 0.1 0.2 mA
NOTES:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
2. This is the increase in supply current for each input at the specified voltage level other than VCC or GND
3. This parameter is valid for any VCC between 0V and 1.2V with a transition time of up to 10msec. From VCC = 1.2V to VCC = 3.3V ±0.3V a
transition time of 100µsec is permitted. This parameter is valid for Tamb = 25°C only.
4. Unused pins at VCC or GND.
5. ICCZ is measured with outputs pulled to VCC or GND.
6. This is the bus hold overdrive current required to force the input to the opposite logic state.
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 5
AC CHARACTERISTICS
GND = 0V ; tR = tF = 2.5ns; CL = 50pF; RL = 500Ω, Tamb = –40°C to +85°C.
LIMITS
SYMBOL PARAMETER WAVEFORM VCC = 3.3V ±0.3V VCC = 2.7V UNIT
MIN TYP1MAX MAX
tPLH
tPHL Propagation delay
An to Yn 11.0
1.0 2.7
2.9 4.0
3.9 4.5
4.9 ns
tPZH
tPZL Output enable time
OEn to Yn 21.0
1.1 3.4
3.4 4.7
4.7 6.0
6.5 ns
tPHZ
tPLZ Output disable time
OEn to Yn 21.8
1.3 3.7
2.6 5.1
4.5 5.7
4.0 ns
NOTE:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 2.7V
INPUT 1.5V
OUTPUT
tPLH tPHL
SA00028
1.5V
1.5V 1.5V
3 V
0 V
VOH
VOL
W aveform 1. Input (An) to Output (Yn) Propagation Delays
OE INPUT
tPZH tPHZ
Yn OUTPUT
VOH
Yn OUTPUT
VOL
tPZL tPLZ 3.0V
0V
VOL + 0.3V
VOH – 0.3V
2.7V
1.5V
1.5V
1.5V
1.5V
0V
SV00103
W aveform 2. 3-State Output Enable and Disable Times
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 6
TEST CIRCUIT AND WAVEFORMS
VMVM
tWAMP (V)
NEGATIVE
PULSE 10% 10%
90% 90%
0V
VMVM
tW
AMP (V)
POSITIVE
PULSE
90% 90%
10% 10% 0V
tTHL (tF)
tTLH (tR)t
THL (tF)
tTLH (tR)
VM = 1.5V
Input Pulse Definition
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value.
CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
RT = Termination resistance should be equal to ZOUT of
pulse generators.
INPUT PULSE REQUIREMENTS
FAMILY
74LVT
PULSE
GENERATOR
VIN
D.U.T.
VOUT
CL
VCC
RL
Test Circuit for 3-State Outputs
6.0V
RTRL
SV00092
Open
GND
SWITCH POSITION
TEST SWITCH
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
6V
GND
Amplitude Rep. Rate tWtRtF
2.7V 10MHz 500ns 2.5ns 2.5ns
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 7
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 8
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
1998 Feb 19 9
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
Philips Semiconductors Product specification
74LVT1253.3V Quad buffer (3-State)
yyyy mmm dd 10
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may af fect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print code Date of release: 05-96
Document order number: 9397-750-03514
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition [1]
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
Data sheet status
[1] Please consult the most recently issued datasheet before initiating or completing a design.
