MC100EPT22DR2 - Motorola / Freescale Semiconductor

 Semiconductor Components Industries, LLC, 1999

September, 1999 – Rev. 2.0 1Publication Order Number:

MC100EPT22/D

MC100EPT22

Dual LVTTL/LVCMOS to

Differential LVPECL Translator

The MC100EPT22 is a dual LVTTL/LVCMOS to differential

LVPECL translator. Because LVPECL (Positive ECL) levels are used

only +3.3V and ground are required. The small outline 8–lead SOIC

package and the single gate of the EPT22 makes it ideal for those

applications where space, performance, and low power are at a

premium. Because the mature MOSAIC 5 process is used, low cost

and high speed can be added to the list of features.

•420ps Typical Propagation Delay

•Differential LVPECL Outputs

•Small Outline SOIC Package

•PNP LVTTL Inputs for Minimal Loading

•Flow Through Pinouts

•Q Output will default HIGH with inputs open

•ESD Protection: 4.0 KV HBM, 200 V MM

•Maximum Frequency > 1.1 GHz

•Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.

For Additional Information, See Application Note AND8003/D

•Flammability Rating: UL–94 code V–0 @ 1/8”,

Oxygen Index 28 to 34

•T ransistor Count = 164 devices

GND

VCC

Figure 1. 8–Lead Pinout (Top View) and Logic Diagram

D1Q1

LVPECL LVTTL

ALYW

SO–8

D SUFFIX

CASE 751

PIN DESCRIPTION

Q0, Q1, Q0, Q1

D0, D1 LVTTL Inputs

FUNCTION

Diff. LVPECL Outputs

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VCC Positive Supply

GND Ground

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

MC100EPT22D SOIC 98 Units/Rail

MC100EPT22DR2 SOIC 2500 Tape & Reel

KPT22

A = Assembly Location

L = W afer Lot

Y = Year

W = Work Week

*For additional information, see Application Note

AND8002/D

MC100EPT22

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MAXIMUM RATINGS*

Symbol Parameter Value Unit

VCC Power Supply 6.0 to 0 VDC

VIInput Voltage (VI not more positive than VCC)6.0 to 0 VDC

Iout Output Current Continuous

Surge 50

100 mA

TAOperating Temperature Range –40 to +85 °C

Tstg Storage Temperature –65 to +150 °C

θJA Thermal Resistance (Junction–to–Ambient) Still Air

500lfpm 190

130 °C/W

θJC Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W

Tsol Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C

* Maximum Ratings are those values beyond which damage to the device may occur.

LVTTL INPUT DC CHARACTERISTICS (VCC = 3.3V ±0.3V; GND = 0V; TA = –40°C to +85°C)

Symbol Characteristic Min Typ Max Unit

IIH Input HIGH Current (V in = 2.7V) 20 µA

IIHH Input HIGH Current MAX (Vin = 6.0V) 100 µA

IIL Input LOW Current (Vin = 0.5V) –0.6 mA

VIK Input Clamp Voltage (Iin = –18mA) –1.0 V

VIH Input HIGH Voltage 2.0 V

VIL Input LOW Voltage 0.8 V

LVPECL OUTPUT DC CHARACTERISTICS (VCC = 3.3V ± 0.3V, GND = 0V) (Note 3.)

–40°C 25°C 85°C

Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit

ICC Power Supply Current HIGH

(Note 1.) 32 43 55 35 45 60 37 46 62 mA

VOH Output HIGH Voltage

(Note 2.) 2100 2240 2400 2100 2280 2400 2100 2350 2400 mV

VOL Output LOW Voltage

(Note 2.) 1350 1490 1600 1350 1555 1600 1350 1550 1600 mV

NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.

1. VCC = 3.3V, GND = 0V, all other pins floating.

2. All loading with 50 ohms to VCC–2.0 volts.

3. Output parameters vary 1:1 with VCC.

AC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V)

–40°C 25°C 85°C

Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit

fmax Maximum Toggle

Frequency (Note 4.) 0.8 1.1 0.8 1.1 0.8 1.1 GHz

tPLH,

tPHL Propagation Delay to

Output Differential 250 400 650 250 420 675 300 500 700 ps

tJITTER Cycle–to–Cycle Jitter TBD TBD TBD ps

tr &

tfOutput Rise/Fall T imes

(20% – 80%) Q, Q 50 110 200 60 120 220 70 140 250 ps

4. Fmax guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only.

MC100EPT22

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PACKAGE DIMENSIONS

SO–8

D SUFFIX

PLASTIC SOIC PACKAGE

CASE 751–06

ISSUE T

SEATING

PLANE

A0.25 MCBSS

0.25 MBM

X 45

DIM MIN MAX

MILLIMETERS

A1.35 1.75

A1 0.10 0.25

B0.35 0.49

C0.19 0.25

D4.80 5.00

E1.27 BSCe3.80 4.00

H5.80 6.20

0 7

L0.40 1.25

0.25 0.50

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. DIMENSIONS ARE IN MILLIMETER.

3. DIMENSION D AND E DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5. DIMENSION B DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS

OF THE B DIMENSION AT MAXIMUM MATERIAL

CONDITION.

0.10

MC100EPT22

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MC100EPT22/D