MBR1035-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2000

October, 2000 – Rev. 3 1Publication Order Number:

MBR1035/D

MBR1035, MBR1045

MBR1045 is a Preferred Device

SWITCHMODE

Power Rectifiers

. . . using the Schottky Barrier principle with a platinum barrier

metal. These state–of–the–art devices have the following features:

•Guardring for Stress Protection

•Low Forward Voltage

•150°C Operating Junction Temperature

•Epoxy Meets UL94, VO at 1/8″

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.9 grams (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Shipped 50 units per plastic tube

•Marking: B1035, B1045

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MBR1035

MBR1045

VRRM

VRWM

VR35

Average Rectified Forward Current

(Rated VR, TC = 135°C) IF(AV) 10 A

Peak Repetitive Forward Current,

(Rated VR, Square W ave,

20 kHz, TC = 135°C)

IFRM 20 A

Non–Repetitive Peak Surge Current

(Surge Applied at Rated Load

Conditions Halfwave, Single

Phase, 60 Hz)

IFSM 150 A

Peak Repetitive Reverse Surge

Current (2.0 s, 1.0 kHz)

See Figure 12.

IRRM 1.0 A

Storage Temperature Range Tstg –65 to +175 °C

Operating Junction Temperature TJ–65 to +150 °C

Voltage Rate of Change

(Rated VR)dv/dt 10,000 V/s

Device Package Shipping

ORDERING INFORMATION

MBR1035 TO–220

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TO–220AC

CASE 221B

PLASTIC

50 Units/Rail

SCHOTTKY BARRIER

RECTIFIERS

10 AMPERES

35 to 45 VOLTS

MBR1045 TO–220 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

31, 4

MARKING DIAGRAM

B10x5

B10x5 = Device Code

x = 3 or 4

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1.)

(iF = 10 Amps, TC = 125°C)

(iF = 20 Amps, TC = 125°C)

(iF = 20 Amps, TC = 25°C)

vF0.57

0.72

0.84

Volts

Maximum Instantaneous Reverse Current (Note 1.)

(Rated dc Voltage, TC = 125°C)

(Rated dc Voltage, TC = 25°C)

iR15

0.1

1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.

Figure 1. Maximum Forward Voltage

1.2

vF, INSTANTANEOUS VOLTAGE (VOLTS)

100

5.0

3.0

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0

0.60.2 0.4 0.8 1.0 1.4

2.0

0.1

0.5

0.7

7.0

0.3

TJ = 150°C

Figure 2. Typical Forward Voltage

0.2

1.2

vF, INSTANTANEOUS VOLTAGE (VOLTS)

100

5.0

3.0

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0

0.60.2 0.4 0.8 1.0 1.4

2.0

0.1

0.5

0.7

7.0

0.3

TJ = 150°C

0.2

100°C

25°C100°C

25°C

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5.0 150

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

NUMBER OF CYCLES AT 60 Hz

101.0

200

100

3.010

, REVERSE CURRENT (mA)IR

20 3025

100

2.0 10

IFSM, PEAK HALF-WAVE CURRENT (AMPS)

35 40 5045

Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability

7.05.0 3020 7050

TJ = 150°C

125°C

100°C

75°C

25°C

(CAPACITIVELOAD)

IPK

IAV

5

110

TC, CASE TEMPERATURE (°C)

5.0

TA, AMBIENT TEMPERATURE (°C)

800

8.0

4.0

2.0

40120

, AVERAGE FORWARD CURRENT (AMPS)IF(AV)

130 140

20 160

6.0

150 160

Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RJA = 16°C/W

60 120100 140

2.00

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

8.0

5.0

4.0

2.0

TA, AMBIENT TEMPERATURE (°C)

800

5.0

4.0

2.0

1.0

404.0

, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV)

6.0 108.0

20 160

3.0

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

12 1614

Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air

60 120100 140

, AVERAGE FORWARD CURRENT (AMPS)IF(AV)

3.0

1.0

9.0

7.0

6.0

TJ = 150°C

SINE WAVE

RESISTIVE LOAD

SQUARE

WAVE

(CAPACITIVELOAD)

IPK

IAV

5

RATED VOLTAGE APPLIED

SQUARE

WAVE

IPK

IAV

(RESISTIVELOAD)

(CAPACITIVELOAD)

IPK

IAV

20, 10, 5

RATED VOLTAGE APPLIED

SQUARE

WAVE

IPK

IAV

(RESISTIVELOAD)

SQUARE

WAVE

IPK

IAV

(RESISTIVELOAD)

(CAPACITIVELOAD)

IPK

IAV

20, 10, 5

RATED VOLTAGE APPLIED

RJA = 60°C/W

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r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01 0.1 1.0 10 100

0.05

0.03

0.02

0.01

0.1

t, TIME (ms)

0.5

0.3

0.2

1.0

Ppk Ppk

TIME

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak of an

equivalent square power pulse.

∆TJL = Ppk • RθJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:

∆TJL = the increase in junction temperature above the lead temperature.

r(t) = normalized value of transient thermal resistance at time, t, i.e.:

r(t1 + tp) = normalized value of transient thermal resistance at time,

t1 + tp.

1000

Figure 9. Thermal Response

0.07

0.7

HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of

majority carrier conduction, it is not subject to junction

diode forward and reverse recovery transients due to minor-

ity carrier injection and stored charge. Satisfactory circuit

analysis work may be performed by using a model consist-

ing o f an ideal diode in parallel with a variable capacitance.

(See Figure 10. )

Rectification efficiency measurements show that opera-

tion will be satisfactory up to several megahertz. For exam-

ple, relative waveform rectification efficiency is approxi-

mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to

RMS power in the load is 0.28 at this frequency, whereas

perfect rectification would yield 0.406 for sine wave inputs.

However, in contrast to ordinary junction diodes, the loss in

waveform efficiency is not indicative of power loss; it is

simply a result of reverse current flow through the diode c a -

pacitance, which lowers the dc output voltage.

VR, REVERSE VOLTAGE (VOLTS)

0.5

1500

1000

500

300

150

0.10.05 50

700

C, CAPACITANCE (pF)

Figure 10. Capacitance

0.2 2.01.0 5.0

200

MAXIMUM

TYPICAL

10 20

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UL RATED EPOXY

COPPER

ALUMINUM WIRE

ANODESCHOTTKY CHIP (See View A-A)

CATHODE

SOLDER DIPPED

COPPER LEADS

Motorola builds quality and reliability into its Schottky

Rectifiers.

First is the chip, which has an interface metal between the

barrier metal and aluminum–contact metal to eliminate any

possible interaction between the two. The indicated guar-

dring prevents dv/dt problems, so snubbers are not manda-

tory. The guardring also operates like a zener to absorb

over–voltage transients.

Second is the package. The Schottky chip is bonded to

the copper heat sink using a specially formulated solder.

This gives the unit the capability of passing 10,000 operat-

ing thermal–fatigue cycles having a TJ of 100°C. The

epoxy molding compound is rated per UL 94, V0 @ 1/8″.

Wire bonds are 100% tested in assembly as they are made.

Third i s the electrical testing, which includes 100% dv/dt

at 1600 V/s and reverse avalanche as part of device char-

acterization.

GUARDRING

PLATINUM BARRIER METAL OXIDE

PASSIVATION

ALUMINUM CONTACT METAL

SCHOTTKY CHIP  View A-A

Figure 11. Schottky Rectifier

2.0 µs

1.0 kHz

12 V 100

VCC 12 Vdc

2N2222

CURRENT

AMPLITUDE

ADJUST

0-10 AMPS

100

CARBON

2N6277

1.0 CARBON

1N5817

D.U.T.

2.0 kΩ

+150 V, 10 mAdc

4.0 µF

Figure 12. Test Circuit for dv/dt and

Reverse Surge Current

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PACKAGE DIMENSIONS

TO–220

PLASTIC

CASE 221B–04

ISSUE D

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.595 0.620 15.11 15.75

B0.380 0.405 9.65 10.29

C0.160 0.190 4.06 4.82

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.190 0.210 4.83 5.33

H0.110 0.130 2.79 3.30

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.14 1.39

T0.235 0.255 5.97 6.48

U0.000 0.050 0.000 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

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Notes

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MBR1035/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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