{}
MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC2.0 A
Peak Collector Current (tp< 0.3ms) ICM 5.0 A
Continuous Base Current IB1.0 A
Power Dissipation (TA=25°C) PD1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES VCE=90V 10 μA
ICES VCE=50V (TC=150°C) 500 μA
ICEO VCE=40V 50 μA
IEBO VEB=4.0V 1.0 μA
IEBO VEB=6.0V 100 μA
BVCEO IC=30mA 80 V
VCE(SAT) IC=1.0A, IB=100mA 0.45 V
VCE(SAT) IC=2.0A, IB=400mA 1.0 V
VBE(ON) VCE=4.0V, IC=2.0A 1.5 V
hFE VCE=4.0V, IC=1.0A 30 120
hFE VCE=4.0V, IC=2.0A 10
hfe VCE=10V, IC=1.0A, f=1KHz 30
fTVCE=10V, IC=1.0A 30 MHz
ton IC=1.0A, IB1=IB2=100mA 150 ns
toff VBE(OFF)=3.7V, RL=20Ω 450 ns
2N5333
PNP SILICON POWER TRANSISTOR
TO-39 CASE
Central
Semiconductor Corp.
TM
R0 (25-September 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5333 is
a PNP Silicon Power Transistor manufactured
by the epitaxial planar process, mounted in a
hermetically sealed metal case, designed for
amplifier and switching applications.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
2N5333
NPN SILICON POWER TRANSISTOR
R0 (25-September 2008)
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR (case)
MARKING: FULL PART NUMBER
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
REQUESTING PRODUCT PLATING
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when ordering (example: 2N2222A PBFREE).
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