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IRFP260PbF
PD- 95915
9/27/04
Lead-Free
IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
IRFP260PbF
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/04
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
ASSEMBLED ON WW 3 5 , 2 000
LO T COD E 5657
WITH ASSEMBL Y
THIS IS AN IRFPE3 0
IN THE ASSEMBLY LINE "H" 035H
LOGO
INTERNATIONAL
RECTIFIER IRFPE30
LOT CODE
AS S E MBL Y
56 57
PART NUMBER
DATE CODE
YEAR 0 = 20 0
0
WE E K 35
LINE H
Note: "P" in ass embly line
position indicates "Lead-Free"