AP0903GMA Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 30V Low Gate Charge RDS(ON) 9m D Fast Switching Speed ID 60A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S SS G APAK-5 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ 10V 60 A ID@TA=100 Continuous Drain Current, VGS @ 10V 38 A 195 A 45 W 0.36 W/ 29 mJ 24 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation Linear Derating Factor 4 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Value Units Max. 2.8 /W Max. 85 /W Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 200401053-1/4 AP0903GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 m VGS=4.5V, ID=20A - - 18 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=33A - 35 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=20V - - 100 nA ID=33A - 17 26 nC VGS(th) Gate Threshold Voltage gfs o IDSS Drain-Source Leakage Current (T j=25 C) o IGSS 2 VGS=0V, ID=250uA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10.3 - nC VDS=15V - 8.2 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=33A - 105 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 21.4 - ns tf Fall Time RD=0.45 - 8.5 - ns Ciss Input Capacitance VGS=0V - 1485 2400 pF Coss Output Capacitance VDS=25V - 245 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 1.5 2.3 Min. Typ. IS=60A, VGS=0V - - 1.3 V IS=30A, VGS=0V, - 29 - ns dI/dt=100A/s - 12 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 2/4 AP0903GMA 120 120 10V 7.0V ID , Drain Current (A) T C =25 C 10V 7.0V o T C =150 C ID , Drain Current (A) o 5.0V 80 4.5V 40 90 5.0V 4.5V 60 30 V G = 3.0 V V G = 3.0 V 0 0 0 2 4 0 6 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6 Fig 2. Typical Output Characteristics 24 1.7 I D =33A V G =10V Normalized RDS(ON) I D =20A T C =25 20 RDS(ON) (m) 4 V DS , Drain-to-Source Voltage (V) 16 1.3 0.9 12 8 0.5 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.7 T j =150 o C 10 Normalized VGS(th) (V) IS(A) 15 T j =25 o C 5 0 1.2 0.7 0.2 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP0903GMA f=1.0MHz 12 10000 V DS =16V V DS =20V V DS =24V 9 C (pF) VGS , Gate to Source Voltage (V) I D =33A 6 C iss 1000 3 C oss C rss 0 100 0 5 10 15 20 25 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 ID (A) 100 100us 1ms 10 T C =25 o C Single Pulse 10ms 100ms DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 90 VG ID , Drain Current (A) V DS =5V o QG o T j =25 C 60 T j =150 C 4.5V QGS QGD 30 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4