Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BVDSS 30V
▼ Low Gate Charge RDS(ON) 9mΩ
▼ Fast Switching Speed ID60A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=100℃A
IDM A
PD@TA=25℃W
W/℃
EAS Single Pulse Avalanche Energy4mJ
IAR Avalanche Current A
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient3Max. 85 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 45
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.36
Continuous Drain Current, VGS @ 10V 38
Pulsed Drain Current1195
Gate-Source Voltage ±20
Continuous Drain Current, VGS @ 10V 60
Parameter Rating
Drain-Source Voltage 30
200401053-1/4
AP0903GMA
Pb Free Plating Product
29
24
G
D
S
SSSG
D
APAK-5
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 mΩ
VGS=4.5V, ID=20A - - 18 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs VDS=10V, ID=33A - 35 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=33A - 17 26 nC
Qgs Gate-Source Charge VDS=20V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10.3 - nC
td(on) Turn-on Delay Time2VDS=15V - 8.2 - ns
trRise Time ID=33A - 105 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 21.4 - ns
tfFall Time RD=0.45Ω- 8.5 - ns
Ciss Input Capacitance VGS=0V - 1485 2400 pF
Coss Output Capacitance VDS=25V - 245 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF
RgGate Resistance f=1.0MHz - 1.5 2.3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=60A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=30A, VGS=0V, - 29 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
2/4
AP0903GMA
AP0903GM
A
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0
30
60
90
120
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
40
80
120
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0.5
0.9
1.3
1.7
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=33A
VG=10V
0.2
0.7
1.2
1.7
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
8
12
16
20
24
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=20A
TC=25
℃
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=150oCT
j=25oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
AP0903GMA
0
3
6
9
12
0 5 10 15 20 25
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=33A
VDS =16V
VDS =20V
VDS =24V
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0
30
60
90
02468
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
