VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-11 1Document Number: 93206
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Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-11DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
Package DO-204AL (DO-41)
IF(AV) 1.1 A
VR50 V, 60 V
VF at IFSee Electrical table
IRM max. 11.0 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 2.0 mJ
Cathode Anode
DO-204AL
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.1 A
VRRM 50/60 V
IFSM tp = 5 μs sine 150 A
VF1 Apk, TJ = 125 °C 0.53 V
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-11DQ05 VS-11DQ05-M3 VS-11DQ06 VS-11DQ06-M3 UNITS
Maximum DC reverse voltage VR50 50 60 60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV) 50 % duty cycle at TC = 84 °C, rectangular waveform 1.1
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied
150
10 ms sine or 6 ms rect. pulse 25
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-11 2Document Number: 93206
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1 A TJ = 25 °C 0.58
V
2 A 0.76
1 A TJ = 125 °C 0.53
2 A 0.64
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
1.0 mA
TJ = 125 °C 11
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 55 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to ambient RthJA
DC operation
Without cooling fin 100
°C/W
Typical thermal resistance,
junction to lead RthJL
DC operation
See fig. 4 81
Approximate weight 0.33 g
0.012 oz.
Marking device Case style DO-204AL (DO-41) 11DQ05
11DQ06
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-11 3Document Number: 93206
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
IF - Instantaneous Forward Current (A)
93206_01 VFM - Forward Voltage Drop (V)
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
T = 150 °C
T = 125 °C
T = 25 °C
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
93206_02
0.0001
0.001
0.01
0.1
1
10
100
0 10 20 30 40 50 60 70
TJ = 150° C
TJ = 125° C
TJ = 25° C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
93206_03
T
10
100
0 10 20 30 40 50 60 70
TJ = 25 °C
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
93206_04
0
20
40
60
80
100
120
140
160
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
DC
Square wave (D = 0.50)
80 % Rated VR applied
see note (1)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93206_05
0
0.2
0.4
0.6
0.8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
93206_06
10
100
1000
10 100 1000 10 000
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
TJ = 25 °C
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-11 4Document Number: 93206
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-11DQ05 1000 1000 Bulk
VS-11DQ05TR 5000 5000 Tape and reel
VS-11DQ05-M3 1000 1000 Bulk
VS-11DQ05TR-M3 5000 5000 Tape and reel
VS-11DQ06 1000 1000 Bulk
VS-11DQ06TR 5000 5000 Tape and reel
VS-11DQ06-M3 1000 1000 Bulk
VS-11DQ06TR-M3 5000 5000 Tape and reel
1
- 11 = 1.1 A (axial and small packages - current is x 10)
2
- D = DO-41 package
3
- Q = Schottky Q.. series
4
- 06 = Voltage ratings
5
- TR = Tape and reel package
None = Bulk package
05 = 50 V
06 = 60 V
Device code
6
243 5
11 D Q 06 TRVS- -M3
17
- Vishay Semiconductors product
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
- Environmental digit
6
7
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95241
Part marking information www.vishay.com/doc?95304
Packaging information www.vishay.com/doc?95338
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 95241
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Axial DO-204AL (DO-41)
DIMENSIONS in millimeters (inches)
2.70 (0.106)
2.29 (0.090) DIA.
2.70 (0.106)
2.29 (0.090) DIA.
0.86 (0.034)
0.72 (0.028)
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
27.0 (1.06) MIN.
(2 places)
1.27 (0.050) MAX.
Flash (2 places)
DIA.
0.86 (0.034)
0.72 (0.028)
(2 places)
DIA.
Cathode band
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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