VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES * Low profile, axial leaded outline * High frequency operation Cathode Anode * Very low forward voltage drop * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-204AL (DO-41) IF(AV) 1.1 A * Designed and qualified for commercial level * Halogen-free according to IEC 61249-2-21 definition (-M3 only) VR 50 V, 60 V VF at IF See Electrical table IRM max. 11.0 mA at 125 C TJ max. 150 C Diode variation Single die EAS 2.0 mJ DESCRIPTION The VS-11DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 1.1 A Rectangular waveform VRRM 50/60 V IFSM tp = 5 s sine 150 A VF 1 Apk, TJ = 125 C 0.53 V TJ Range - 40 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage Maximum working peak reverse voltage VRWM VS-11DQ05 VS-11DQ05-M3 VS-11DQ06 VS-11DQ06-M3 UNITS 50 50 60 60 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1 A, L = 4 mH 2.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Revision: 21-Sep-11 50 % duty cycle at TC = 84 C, rectangular waveform 1.1 5 s sine or 3 s rect. pulse 150 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 25 Document Number: 93206 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 2A 1A TJ = 125 C 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) TJ = 25 C VR = Rated VR TJ = 125 C CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C LS Measured lead to lead 5 mm from package body dV/dt Rated VR VALUES UNITS 0.58 0.76 V 0.53 0.64 1.0 mA 11 55 pF 8.0 nH 10 000 V/s VALUES UNITS - 40 to 150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ (1), TStg Maximum thermal resistance, junction to ambient RthJA DC operation Without cooling fin 100 Typical thermal resistance, junction to lead RthJL DC operation See fig. 4 81 0.33 Approximate weight Marking device C/W g 0.012 Case style DO-204AL (DO-41) oz. 11DQ05 11DQ06 Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 21-Sep-11 Document Number: 93206 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors 160 Allowable Case Temperature (C) IF - Instantaneous Forward Current (A) 10 T = 150 C T = 125 C T = 25 C 1 0 0.2 0.4 0.6 0.8 1 100 80 40 20 see note (1) 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) 93206_04 Fig. 4 - Maximum Ambient Temperature vs. Average Forward Current, Printed Circuit Board Mounted 100 Average Power Loss (W) 0.8 10 TJ = 150 C 1 TJ = 125 C 0.1 0.01 0.001 TJ = 25 C D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.6 RMS Limit 0.4 DC 0.2 0 0.0001 0 10 20 30 40 50 60 0 70 VR - Reverse Voltage (V) 93206_02 TJ = 25 C 10 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage 70 0.4 0.6 0.8 1 1.2 1.4 1.6 Fig. 5 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) T (pF) CT - Junction Capacitance 100 0.2 Average Forward Current - IF(AV) (A) 93206_05 Fig. 2 - - Typical Values of Reverse Current vs. Reverse Voltage 93206_03 Square wave (D = 0.50) 80 % Rated VR applied 60 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics DC 120 0.1 93206_01 IR - Reverse Current (mA) 140 1000 At Any Rated Load Condition And With rated VRRM Applied Following Surge 100 TJ = 25 C 10 10 93206_06 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 21-Sep-11 Document Number: 93206 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 11 D Q 06 TR -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - 11 = 1.1 A (axial and small packages - current is x 10) 3 - D = DO-41 package 4 - Q = Schottky Q.. series 5 - 06 = Voltage ratings 6 - TR = Tape and reel package 05 = 50 V 06 = 60 V None = Bulk package 7 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-11DQ05 1000 1000 PACKAGING DESCRIPTION Bulk VS-11DQ05TR 5000 5000 Tape and reel VS-11DQ05-M3 1000 1000 Bulk VS-11DQ05TR-M3 5000 5000 Tape and reel VS-11DQ06 1000 1000 Bulk Tape and reel VS-11DQ06TR 5000 5000 VS-11DQ06-M3 1000 1000 Bulk VS-11DQ06TR-M3 5000 5000 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93206 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000