Rugged Power MOSFETs IRF450R, IRF451R, IRF452R, IRF453R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 13A, 450V-500V ros(on) = 0.4N and 0.52 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF450R, IRF451R, iRF452R and IRF453R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA metal package. Absolute Maximum Ratings File Number 2008 N-CHANNEL ENHANCEMENT MODE 0 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) GATE 92cs- 37801 JEDEC TO- 204AA Parameter IRF450R IRF451R IRF452R IRF453R Units Vos Drain - Source Voltage 500 450 500 450 Vv Voaa Drain - Gate Voltage (Res = 20 KQ) @ 500 450 500 450 Vv Ip @ Tc = 25C Continuous Drain Current 13 13 12 12 A Ip @ Tc = 100C Continuous Drain Current 8.0 8.0 7.0 7.0 A lom Pulsed Drain Current @ 52 52 48 48 A Vas Gate - Source Voitage +20 Vv Pp @ Tc = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) w/C Ens Single Pulse Avalanche Energy Rating @ 860 mj Toe Storage Temperature Flange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-72Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRF450R, IRF451R, IRF452R, IRF453R P. Type Min. Typ. Max. | Units Test Conditions BVoss_ Drain - Source Breakdown Voltage iIRF450R = IRF452R | 900 - - Vv Ves = OV (RF451R = IRF453R | 45 - _ Vv Jo = 250uA Voesum Gate Threshold Voltage ALL 2.0 = 4.0 Vos = Vas, lp = 250 A less Gate-Source Leakage Forward ALL - 100 nA Ves = 20V lass Gate-Source Leakage Reverse ALL _ = ~100 nA Ves = -20V loss Zero Gate Voltage Drain Current _ = 250 HA Vos = Max. Rating, Vas = 0V ALL _ [1000 | pA | Vos = Max. Rating x 0.8, Vos = OV, Te = 125C Ino == On-State Drain Current @ IRF450R| 1g _ _ A IRF451R Vos > loton X Rosen max. Ves = 10V - IRF452R | 45 _ _ A IRF453R Roston Static Drain-Source On-State IRF450R{ __ 03 04 Q Resistance @ : Rese Ves = 10V, lo = 7.0A IRFA53R{| | 94 | O85 | 2 | Gre Forward Transconductance @ ALL 6.0 11 = S(G)_| Vos > loion X Rosionmaxs Ip == 7.0A Crs Input Capacitance ALL = 2000 = pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 400 - pF See Fig..10 Cres Reverse Transfer Capacitance ALL 100 = pF taton Turn-On Delay Time ALL _ _ 35 ns Voo = 210V, Ip = 7.0A, Zo = 4.72 te Rise Time ALL _ =_ 50 ns See Fig. 17 tatomn Turn-Off Delay Time ALL _ _ 150 ns (MOSFET switching times are essentially th Fall Time ALL _ __ 70 ns independent of operating temperature.) Q, Total Gate Charge ALL _ B2 140 nc Ves = 10V, Ip = 16A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qe Gate-Source Charge ALL = 40 = nc este) of operating Osa Gate-Drain (Miller) Charge ALL _ 42 = nc PI Lo Internal Drain inductance ALL _ 5.0 _- nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device 5 source and gate pins inductances and center of die. Lo Ls Internal Source Inductance ALL 12.5 - nH Measured from the , source pin, 6mm Ls (0.25 in.) from header and source s bonding pad. 926s zee Thermal Resistance RnJC Junction-to-Case ALL =_ = 83 C/W RwCS _Case-to-Sink ALL 0.1 _ C/W _| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF450R |} __ _ 13 A Modified MOSFET symbol (Body Diode) IRF451R showing the integral 0 IRF452R 2 A reverse P-N junction rectifier. IRF453R | Ise Pulse Source Current IRF450R} _ 52 A (Body Diode) @ IRF451R 2 IRF452R a2cs-azesa inFA5aR| ~~ | ~ | 48 | A Vso Diode Forward Voltage @ ne ASOR _ _ 14 V To = 25C, Is = 13A, Vas = OV IRF452R = = = IRF453R| _ 1.3 Vv Te = 25C, Is = 12A, Vas = OV te Reverse Recovery Time ALL = 1300 = ns Ts = 150C, Ir = 13A, dle/dt = 100A/ys Qaa Reverse Recovered Charge ALL _ 7.5 _ uC Ty = 150C, Ie = 13A, die/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). Von = 25V, starting Ty = 25C, L. = 9.2MH, Ros = 259), Ipeak = 13A. See figures 15, 16. 6-73Rugged Power MOSFETs IRF450R, IRF451R, IRF452R, IRF453R Ty = -500C \ Ty = 250C 20 Vos > 'p(on) x Roston) max. ' 1 Ty = 1259 80 us PULSE TEST 80 us PULSE TEST g = = a < = e =< ~ 12 z a = Ty = 1250C = 2 J 2 z 3 z 8 = Ty = 260 =z o a 8 3 Ty = -50C ~ 4 40v 1 0 50 100 150 200 250 300 Q 1 2 3 4 5 6 7 8 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 10 - ! Vos= lov iRF4SOR, 1A AREA IS LIM! Rosi(on) IRF 452A, 3R 8 N\ _ JAF4SOR, 1R, z g < x (RF 462R, 3A = & = z 6 z z z a & a ac 3 3 z4 z a ft & a a Tp = 259C ~ Ty= 150C Max 2 Rinse = 0.83 K'W SINGLE PULSE al aA 3.6V { 0 1 2 3 4 5 19 2 5 10 20 50 00 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN TO SOURCE VOLTAGE IVOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area o wn o o ~N s nm pa 81m] ht - 4 1 DUTY FACTOR, D= . SINGLE PULSE (TRANSIENT - . FF THERMAL IMPEDANCE) 2. PER UNIT BASE = Rinyc = 083 DEG C/W o so a o 2 S 3. Tym - Te = Pom Ztnclt) Zenyclt!/Arnyc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT) o 0.01 2 5 10-4 2 1-3-2 5 10-2 2 5 10-1 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONOS) & Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-74Rugged Power MOSFETs aj. TRANSCONDUCTANCE (SIEMENS) 20 cx) - Ty = -80C Ty = 2500 Ty = 1269C Vos > !oion) * Roston) max. BO us PULSE TEST i 10 18 20 25 1g, ORAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current BV pss. DRAIN-TO-SOURCE @REAK DOWN VOLTAGE (NORMALIZED) 4000 3200 C, CAPACITANCE (pF) 2400 1600 1.28 wn o an o a 0.85 0.75 -40 0 40 80 Ty, JUNCTION TEMPERATURE (C) 120 160 Fig. 8 Breakdown Voltage Vs. Temperature 800 Cigg = Cys + Cog, Cas SHORTED Crs = Cog Co C, Cow" os Co Ce = Cas + Cog Ves 9 = 1 MHz Coss Coss 10 20 30 40 $0 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage ign, REVERSE DRAIN CURRENT (AMPERES) Ss ~ oa n o Nn IRF450R, IRF451RA, IRF452R, IRF453R Ty = 15090 Ty = 180C j 2 ~ 4 4 Vgp, SOURCE TO-DAAIN VOLTAGE (VOLTS) Fig. 7 -- Typical Source-Drain Diode Forward Voltage Roston). DRAIN TO SOURCE ON RESISTANCE (NDRMALIZED) 22 2 a6 02 Vgg = 10V 'pg = 5A -40 0 40 80 420 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature Vgs. GATE TO SQURCE VOLTAGE (VOLTS) 20 Vos = 100V 1 1 Vps = 250V +! ' Vos = 400V ip = 16A FOR TEST CIRCUIT SEE FIGURE 18 28 56 84 2 140 Oy. TOTAL GATE CHARGE nC} Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-75Rugged Power MOSFETs IRF450R, IRF451R, IRF452R, IRF453R 10 3 y z 0g 2 ey oe z Ss 08 3 Vgs = 20V wd oo Z o7p----}_-----4- --- -f-_}.. wa oO ec 2 B 06 f=. oO ee z = 05 4 fAA pe he TO = | = 2 Rosion) MEASURE D WITH CURRENT eas PULSE OF 2.0 us CURATION 4 INITIAL Ty = 25C (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) 03 a 1 1. 1 0 10 20 30 a0 50 60 70 \p, DRAIN CUARENT (AMP-.RES) Fig. 12 Typical On-Resistance Vs. Drain Current oP TN \ \ o 7 o 2 _t Pp, POWER DISSIPATION (WATTS) - o t Yo N Q 20 40 60 80 100 120 140 To CASE TEMPERATURE (C}) Fig. 14 Power Vs. Temperature Derating Curve ADJUST Ry TO OBTAIN SPECIFIED Ip Ves Pou LSE | GENE RATOR SOUACE J] ] IMPEDANCE Fig. 17 Switching Time Test Circuit 6-76 IRF450A, 451R 9 iRF452R, 453A \p, DRAIN CURRENT (AMPERES) Q 25 50 15 100 125 450 Tc, CASE TEMPERATURE (C} Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK I Veg? tov I Fe] 9208-42659 Fig. 15 Unclamped Energy Test Circuit - -- 92CS- 42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT MSOLATED REGULATOR SUPPLY SE SAME TYPE RV AS OUT J BATTERY | O 2a! Vos '5 a In CURRENT = CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 Gate Charge Test Circuit