11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
BUZ71
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features
• 14A, 50V
•r
DS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ71 TO-220AB BUZ71
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet June 1999 File Number 2418.2
12
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ71 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 50 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 50 V
Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID14 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 56 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD40 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω
Forward Transconductance (Note 2) gfs VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S
Turn-On Delay Time td(ON) VCC = 30V, ID≈ 3A, VGS = 10V, RGS = 50Ω,
RL = 10Ω-2030 ns
Rise Time tr-5585 ns
Turn-Off Delay Time td(OFF) -7090 ns
Fall Time tf- 80 110 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10) - 480 650 pF
Output Capacitance COSS - 280 450 pF
Reverse Transfer Capacitance CRSS - 160 280 pF
Thermal Resistance Junction to Case RθJC ≤ 3.1 oC/W
Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD TC = 25oC--14A
Pulsed Source to Drain Current ISDM TC = 25oC--56A
Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 28A, VGS = 0V, (Figure 12) - 1.6 1.8 V
Reverse Recovery Time trr TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs,
VR = 30V - 120 - ns
Reverse Recovery Charge QRR - 0.15 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 820µH, IPEAK = 14A. (See Figures 14 and 15).
BUZ71
13
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
00 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
8
6
4
2
00 50 100 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
12
10
VGS ≥ 10V
18
16
14
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
ZθJC, TRANSIENT THERMAL IMPEDANCE
1
0.1
0.01
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
0.5
0.2
0.1
0.05
0.02
0.01
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
101
ID, DRAIN CURRENT (A)
102
102
100
101
100
10-1 103
10µs
5µs
1ms
10ms
100µs
DC
100ms
TJ = MAX RATED
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
TC = 25oC
SINGLE PULSE
30
20
10
0012 6
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 20V 10V
PD = 40W
345
PULSE
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
VGS = 6.5V
VGS = 7.0V
VGS = 7.5V
VGS = 8.0V
DURATION = 80µs
DUTY
CYCLE = 0.5% MAX
BUZ71
14
FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0510
VGS, GATE TO SOURCE VOLTAGE (V)
15
10
5
0
IDS(ON), DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 80µs
VDS = 25V
TJ = 25oC
DUTY CYCLE = 0.5% MAX
010 3020
0.3
0.2
0.1
0
ID, DRAIN CURRENT (A)
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
0.4
10V
20V
VGS = 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
rDS(ON), DRAIN TO SOURCE
0.20
0.10
0-40 0 40
TJ, JUNCTION TEMPERATURE (oC)
120
0.30
80
VGS = 10V, ID = 9A
160
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-50 0 50 100 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
4
3
2
1
0
TJ, JUNCTION TEMPERATURE (oC)
ID = 1mA
VDS = VGS
010203040
VDS, DRAIN TO SOURCE VOLTAGE (V)
101
100
10-1
10-2
C, CAPACITANCE (nF)
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈CDS +CGS
VGS = 0, f = 1MHz 6
3
4
2
1
00 5 10 15
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
5
PULSE DURATION = 80µs
VDS = 25V
TJ = 25oC
DUTY CYCLE = 0.5% MAX
BUZ71
15
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0 0.5 1.0 1.5 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
101
100
10-1
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
TJ = 150oCTJ = 25oC
2.5 3.0
DUTY CYCLE = 0.5% MAX
15
10
5
0010
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 18A
VDS = 10V
VDS = 40V
20 30
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
BUZ71
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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Intersil Corporation
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
Ig(REF)
0
BUZ71
