BT151-500RT SCR 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring good bidirectional blocking voltage capability, high surge current capability, high junction temperature capability and high thermal cycling performance. 1.2 Features and benefits * Good bidirectional blocking voltage capability * High junction operating temperature capability * High surge current capability * High thermal cycling performance * Planar passivated for voltage ruggedness and reliability 1.3 Applications * Capacitive Discharge Ignition (CDI) * Crowbar protection * Inrush protection * Motor control * Voltage regulation 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 500 V VRRM repetitive peak reverse voltage - - 500 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 C; state current tp = 8.3 ms - - 132 A half sine wave; Tj(init) = 25 C; - - 120 A - - 150 C - - 12.5 A tp = 10 ms; Fig. 4; Fig. 5 Tj junction temperature IT(RMS) RMS on-state current half sine wave; Tmb 133 C; Fig. 1; Fig. 2; Fig. 3 Scan or click this QR code to view the latest information for this product BT151-500RT NXP Semiconductors SCR Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 6 - 2 15 mA Simplified outline Graphic symbol Static characteristics IGT gate trigger current 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode 3 G gate mb A mounting base; connected to anode mb A K G sym037 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package BT151-500RT Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 500 V VRRM repetitive peak reverse voltage - 500 V IT(AV) average on-state current half sine wave; Tmb 133 C - 8 A IT(RMS) RMS on-state current half sine wave; Tmb 133 C; Fig. 1; - 12.5 A - 132 A - 120 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 C; tp = 8.3 ms half sine wave; Tj(init) = 25 C; tp = 10 ms; Fig. 4; Fig. 5 BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 2 / 11 BT151-500RT NXP Semiconductors SCR Symbol Parameter Conditions Min Max Unit I t I t for fusing tp = 10 ms; SIN - 72 A s dIT/dt rate of rise of on-state current IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/ - 50 A/s 2 2 2 s IGM peak gate current - 4 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 1 W Tstg storage temperature -40 150 C Tj junction temperature - 150 C over any 20 ms period 003a a d205 30 I T(RMS ) (A) 25 003aad206 16 IT(RMS) (A) 133 C 12 20 8 15 10 4 5 0 10-2 10-1 0 -50 1 10 s urge duratio n (s ) f = 50 Hz; Tmb = 133 C Fig. 1. Fig. 2. RMS on-state current as a function of surge duration; maximum values BT151-500RT Product data sheet 50 100 150 Tmb (C) RMS on-state current as a function of mounting base temperature; maximum values All information provided in this document is subject to legal disclaimers. 27 July 2012 0 (c) NXP B.V. 2012. All rights reserved 3 / 11 BT151-500RT NXP Semiconductors SCR 003aad202 15 Tmb(max) (C) a = 1.57 Ptot (W) 1.9 2.2 2.8 10 130.5 137 4.0 5 0 0 2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 4 143.5 6 8 IT(AV) (A) 150 = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of average on-state current; maximum values 003aad203 160 ITSM (A) 120 80 IT ITSM 40 0 t tp Tj(init) = 25 C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 4 / 11 BT151-500RT NXP Semiconductors SCR 003aad204 103 ITSM (A) (1) 102 IT ITSM t tp Tj(init) = 25 C max 10 10-5 10-4 10-3 10-2 tp (s) tp 10 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W Conditions Min Typ Max Unit 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 6 - 2 15 mA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 C; Fig. 7 - 10 40 mA IH holding current VD = 12 V; Tj = 25 C; Fig. 8 - 7 20 mA VT on-state voltage IT = 23 A; Tj = 25 C; Fig. 11 - 1.4 1.75 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 9 - 0.6 1.5 V VD = 500 V; IT = 0.1 A; Tj = 150 C; 0.25 0.4 - V Fig. 9 ID off-state current VD = 500 V; Tj = 150 C - 0.5 2.5 mA IR reverse current Tj = 125 C; VR = 500 V - 0.1 0.5 mA Tj = 150 C; VR = 500 V - 0.1 0.5 mA BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 5 / 11 BT151-500RT NXP Semiconductors SCR Symbol Parameter Conditions Min Typ Max Unit VDM = 335 V; Tj = 150 C; (VDM = 67% - 300 - V/s Dynamic charateristics dVD/dt rate of rise of off-state voltage of VDRM); gate open circuit; exponential waveform; Fig. 10 tgt gate-controlled turn-on ITM = 40 A; VD = 500 V; IG = 0.1 A; dIG/ time dt = 5 A/s; Tj = 25 C - 2 - s tq commutated turn-off time - 70 - s VDM = 335 V; Tj = 150 C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/s; dVD/ dt = 50 V/s; RGK = 100 ; (VDM = 67% of VDRM) 003aab824 3 IGT IGT(25C) IL IL(25C) 2 2 1 1 0 -50 Fig. 6. 0 50 100 Tj (C) 0 -50 150 Normalized gate trigger current as a function of Fig. 7. junction temperature 003aab826 3 2 1.2 1 0.8 Fig. 8. 50 100 Tj (C) 0.4 -50 150 Normalized holding current as a function of junction temperature BT151-500RT Product data sheet 50 100 Fig. 9. 150 0 50 100 Tj (C) 150 Normalized gate trigger voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 27 July 2012 Tj (C) 003aab823 1.6 VGT VGT(25C) 0 0 Normalized latching current as a function of junction temperature IH IH(25C) 0 -50 003aab825 3 (c) NXP B.V. 2012. All rights reserved 6 / 11 BT151-500RT NXP Semiconductors SCR 003aab827 104 dVD/dt (V/s) 103 102 10 0 50 100 Tj (C) 150 gate open circuit Fig. 10. Critical rate of rise of off-state voltage as a function of junction temperature; typical values 003a a f776 25 IT (A) 20 15 10 (1) (2) 5 0 (3) 0 1 VT (V) 2 Vo = 0.825 V; Rs = 0.41 (1) Tj = 150C; typical values (2) Tj = 150C; maximum values (3) Tj = 25C; maximum values Fig. 11. On-state current as a function of on-state voltage BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 7 / 11 BT151-500RT NXP Semiconductors SCR 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. TO-220AB (SOT78) BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 8 / 11 BT151-500RT NXP Semiconductors SCR In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 8. Legal information 8.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 8.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. 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NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 9 / 11 BT151-500RT NXP Semiconductors SCR grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 8.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation. BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 10 / 11 BT151-500RT NXP Semiconductors SCR 9. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Limiting values .......................................................2 5 Thermal characteristics .........................................5 6 Characteristics ....................................................... 5 7 Package outline ..................................................... 8 8 8.1 8.2 8.3 8.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 (c) NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 July 2012 BT151-500RT Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 (c) NXP B.V. 2012. All rights reserved 11 / 11