TOSHIBA TLN113 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN113 INFRARED LED FOR PHOTOSENSORS Unit : mm OPTO-ELECTRONIC SWITCHES 3.040.3 TAPE AND CARD READERS = ROTARY ENCODERS 3 FDD (FLOPPY DISK DRIVE) DETECTION = = 2-90.6 max 3 2 @ High radiant intensity 270.4501 Hh @ Ideal for use in combination TPS613 with phototransistor 3 , _ MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current Ip 40 mA Forward Current Derating ( ): Reference value 6 Alg/C 0.53 mA /C (Ta > 25C) B TOSHIBA _4-3G1 Pulse Forward Current (Note) IFp 400 mA Weight : 0.08 g (typ.) Reverse Voltage VR 5 Vv Operating Temperature Range Topr 20~75 C PIN CONNECTION Storage Temperature Range Tstg 30~100 C 1. Anode (Note) : Pulse width = 100 ys, repetitive frequency = 100 Hz 1opt 2 2. Cathode OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Min | Typ. | Max | UNIT Forward Voltage VE Ip = 10mA 1.15| 1.30 Vv Reverse Current IR VR=5V 10} uA TLN113 0.8) 4.8 . . _ TLN1138 (B) | 1.25) 3.0 Radiant Intensity) Iz Ip = 20mA TLN113 (C) a1 18 mW /sr TLN113 (BC)| 1.25) 4.8 Radiant Power Po Ip = 20mA 2.5/ mW Capacitance Cy Vr = 0, f= 1MHz 30); pF Peak Emission Wavelength AP Ip = 20mA 940; nm Spectral Line Half Width AA Ip = 20mA _ 50] nm Half Value Angle + Ip = 20mA | +40; 1 2002-03-20TOSHIBA TLN113 PRECAUTIONS Please be careful of the followings. 1. Soldering temperature : 260C max Soldering time : 3s max (Soldering must be performed under the stopper.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1:1. In (t) Pott) Ig (0) ~~ Pg (0) 2 2002-03-20TOSHIBA TLN113 If - Ta ALLOWABLE FORWARD CURRENT Iq (mA) 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AVF/ATa Ip FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) 0.1 0.3 1 3 10 30 FORWARD CURRENT Ip (mA) Ip IF (typ.) 3 s & 2 bo Et ww 4 & = Z & 4 PULSE WIDTH <= 100 BS 5 REPETITIVE Ss FREQUENCY = 100 Hz Ta = 25C 1 3 10 30 100 300 FORWARD CURRENT Ip (mA) FORWARD CURRENT Ip (mA) PULSE FORWARD CURRENT Ipp (mA) RELATIVE INTENSITY If VE (typ.) 0.1 0.6 0.8 1.0 1.2 1.4 16 FORWARD VOLTAGE VR (V) Irp VFP (typ.) PULSE WIDTH = 100 ys REPETITIVE FREQUENCY = 100 Hz Ta = 25C 0.8 1.2 1.6 2.0 2.4 2.8 PULSE FORWARD VOLTAGE Vprp (V) WAVELENGTH CHARACTERIISTIC (typ.) Ip = 20 mA Ta = 25C 820 860 900 940 980 1020 1060 WAVELENGTH A (m) 2002-03-20TOSHIBA TLN113 COLLECTOR CURRENT Ic (mA) RADIATION PATTERN (typ.) (Ta = 25C) 0 02 04 06 08 10 RELATIVE INTENSITY COUPLING CHARACTERISTIC WITH 3 Ta = 25C Ip = 1.9mW/sr 1 TPS613 USING SAMPLE Tr, = 100 wA at VCR =3V E = 0.1 mW / cm? 0.3 D Go Ee 0.1 1 3 5 10 30-50 100 DISTANCE d (nm RELATIVE RADIANT INTENSITY. ALLOWABLE PULSE FORWARD CURRENT Ipp (nA) - RELATIVE Ig Ta (typ.) 0.1 -40 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) Irp Pw 10 kHz 2 kHz 500 5 kHz 1kHz 200 Hz 5 104 30 50 100% 300500 1m 3 5 10m PULSE WIDTH Pw (3) 2002-03-20TOSHIBA TLN113 RESTRICTIONS ON PRODUCT USE 000707EAC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 5 2002-03-20