SIEMENS DEVICE TYPES PartNo. CTR,% Min. Part No. CTR % Min. 4N25 20 MCT2 20 : 4N26 20 MCT2E 20 4N27 10 MCT270 50 4N28 10 MCT271 45-90 4N35 100 MCT272 78-150 4N36 100 MCT273 125-250 4N37 100 MCT274 225-400 4N38 10 MCT275 70-90 HITA1 50 MCT276 15-60 H11A2 20 MCT277 100 H11A3 20 H11A4 10 H11A5 30 FEATURES interfaces with Common Logic Families * input-output Coupling Capacitance < 0.5 pF * industry Standard Dual-in-tine 6-pin Package | * Fleid Effect Stable by TRIOS ... * 5300 VACpg Isolation Test Voltage Recognized under Underwriters Laboratory Flie #E52744 VDE #0884 Approval Available with Option -001 APPLICATIONS AC Mains Detection Reed Relay Driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground isolation Logic Coupting with High Frequency Noise Rejection Notes: 1. TRIOS=TRansparent lOn Shield 2. Designing with data sheat is covered in Application Note 45, Application Notes section of Data Book: PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupter Dimensions in Inches (mm) inone iD 8m / Anode ac Hs1Base oe es } Cathode [Z] u HI Cotector. { nc BI [4 JEmitter lal Tpl tei , 335 (B:50) 343 (8.70) b' t 039... (1.00) [7.022 (0.55) | typ. Min jy 430 (4.22) 4 082 (1.32) typ Wy fp 2 ' 4 ' |: 8 = 44 (2.90) .031 (0.80) min. 3e-gel 30 (3.0) ||) -031 0.80) o10(29. et t |] 035 (0.00) 00-247 .100 (2.54) typ. 018 1o4sy_| 022 (0.55) (762-861) DESCRIPTION This data sheet presents five families of Siemens Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ AS/A4/AS, the MCT2/2E, and MCT270/27 1/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. All coupters are Underwriters Laboratories (UL) listed to comply with a 7500 Vacipx) fsolation Test Voltage. This isolation performance is accomplished through Siemens double moiding isolation manufac- turing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option -001. Phototransistor gain stability, in the presence of high isolation volt- ages, is insured by incorporating a TRansparent IOn Shield (TRIOS ) on the phototransistor substrate. These isolation processes and the Siemens 1S09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. | The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. 5-27senddensasecsendaensnestevnsvensessdeenaseasesdevsasedsentenaaene 6V 60 mA Surge Curent (t10 pis). wb A Power Dfssipiation. se pasvevecetsenstanessenssaneseeseesnesessesacassesticaseetasasseasees 100 mw Detector - * Collector-Emitter Breakdown Voitage.. .70V Emitter-Base Breakdown Voltage ..... wl Collector Current .............000. 50 mA _ Collector Current (t <1 ms). . 100 mA Power Dissipation... cccccssscsscesssstensssetensseessesnsetseossasereatsneptessseasenees 150 mW Isolation Test Voltage... ccsscessestseseesnrsserensseevenssseatencnee san 800 VACaug CHOCP AGO oes eee c csc teasectsseccessccnecessenessnerscasacssnenscesesecseatanscesessporsesssnsnesses 27 mm ClOSrFANCE oo eee ee 27 mm Isolation Thickness between Emitter and Detector................... 20.4 mm Comparative Tracking Index per DIN JEC 112A/DE0303, part 1... 175. isolation Resistance Vig=500 V, Ty= 25C oo ceessseeteee eseeestsneseensuseseesancoseesees usterssetnanestetsases 100 Vig=S00 V; Ts 100C oon seccseieescssstsecessensssessesssssvessersssuesesssssssseeeceusanseses 10g Storage Temprature... Operating Temperature .. Junction Temperature... Soldering Temperature (max. 10s, dip soldering: distance to Seating plane 21.5 MM)... es cesses teneeeeeaeessteteeeenenees 260C 4N25/26/27/28-Characteristics T,=25C . was Emitter Symbol..| Min..| Typ. | Max. | lini |.Condition . Forward Voltage Ve: 13 [15 |v ip=50 mA Reverse Current* a for | 100. [uA | vasd0V Capacitance . Co 25 pF V_=0 Breakdown Voltage Collector-Emitter | Bcge | 30 v Io=t mA Emitter-Coltlector | BVgco , | 7 Ig=100 pA Collector-Bas | BVcpp | 70. Ip=100 pA Icgo(dark)" 4n25i26/e7 | 5 |50 |nA_ | Vog=10 V, (base open) . 4N28 10 100 , lopo(dark)* 2 20 | nA | Vog=10V, (emitter open) | Capacitance, Collector-Emitter Cog pF Voge=0 Package DC Current Transfer Ratio* =| 4N25/26 CTR 20 =| 50 % Vog=10 V, p= 10 mA . 4N27/28 10 | 30 Isolation Voltage* 4N25 Vio 2500 v Peak, 60 Hz 4N26/27 1500 4N28 500 Saturation Voltage, Collector-Emitter VoE(sat) 05 |V Iog=2.0 mA, |Ip=50 mA Resistance, input to Output" Rio 100 GQ | Vig=500 V Coupling Capacitance Clo 0.5 pF f=1 MHz Rise and Fall Times tp. te us (p=10 mA Vog=10 V, Ag=1002 * Indicates JEDEC registered values 5-28 Phototransistor, Single Channel, industry Standard4N35/36/37/38Characteristics T,=25C ae . 4 Pea Uni } Condition Forward Voltage* : Ve 139:.)15 |V ie=10 mA . 0.9 17 \p=10 mA, Ta=-55C Reverse Current* i) 0.1 10 pA Va=6.0V Capacitance Co 25 pF | V_=0, f=1 MHz Breakdown Voltage, Collector-Emitter* | 4N35/36/37 | BVceq | 30 Vv Ig=1 mA 4N38 80 Breakdown Voltage, Emitter-Collactor* BYeco | 7 Vv te=100 pA Breakdown Voltage, Collector-Base* 4N35/36/37 | BVepo | 70 V | tg=100 pA, ig=1 pA 4N38: 80 , Leakage Current, Collector-Emitter* 4N35/36/37 | IcEO 5 50 nA Voe=10 V, Ip=0 : 4N38 50 Vog=60 V, Ip=0 Leakage Current,Collector-Emitter* 4N35/36/37 | IceD 500 | pA Voe=30 V, Ipe0, Ta= 100C 4N36 : 6 Voe=60 V, tp=0, Ta= 100C Capacitance, Collector-Emitter Cor 6 pF Vog=0 Package . DC Current Transfer Ratio* : ANS5/36/37 |,CTR | 100 % Vog=10 V, ip=10 mA, 4Nn38 20 Voe=t V, Ip=20 mA DC Current Transfer Ratio* | 4N35/36/37 | CTR 40 | 50 % Vog=10 V, Ip=10 mA, anea 30 Ta=-55 to 100C Resistance, input to Output" Rio 1074 WT Vi9=500V Coupling Capacitance* Cio 0.6 pF | f=1 MHz Switching Time* ton: torr 40. ps \o=2 mA, Re=100 Q, Veo=10 V * Indicates JEDEC. registered value ' H11A1 through H11A5Characteristis T,=25C Emitter Symbol | Min. | Typ. | Max. | Unit | Condition Forward Voltage HI1A1-H11A4 | Ve 11 [15 |v ip=10 mA H11A5 11 [47 Reverse Current tp 10 pA | Va_=3V Capacitance Co 50 pF Vp=0, f= 1 MHz Detector Breakdown Voltage, Collector-Emitter BVceo | 30 v Io=1 mA, ip=0 mA Breakdown Voltage, Emitter-Callector BYgeco | 7 v te=100 pA, Ip=0 mA Breakdown Voltage, Collector-Base BVcag | 70 Vv Ig=10 pA, Ip=0 mA Leakage Current, Collector-Emitter lcEeo 5 | 50 nA | Vog=10V, ip=O mA Capacitance, Collector-Emitter Coe 6 pF | Vog=0 Package DC Current Transfer Ratio H11A4 CTR 50 % Vog=10 V, lp=10 mA HINA 20 H11A4 10 H11A5 30 Saturation Voltage, Collector-Emitter Voesat 04 |V {og=0.5 MA, Ip=10 MA Capacitance, Input to Output Cio 0.5 pF Switching Time ton. torr 3.0 pS Io=2 MA, Re=100 Q, Vog=10 V 5-20 Phoiotransistor, Single Channel, industry StandardMCT2AACT2ECharacteristica Ty=25C Emitter Loon, pus an] Symbol | iin. | Typ. | Max. | Unit Condition Forward Voltage , Ve 1.1 15 1V ig=20 mA Reverse Current In 10 pA Vaj=3 V Capacitance | g 26 pF Vp=0, f= 1 MHz Breakdown Voltage Collector-Emitter | BVceq [ 30 Vv Ig=1 MA, tp=0 mA Emitter-Collector [BVeco | 7 _ : | 1g=100 pA, ip=0 mA Collector-Base | BVggo | 70: Ig=10 pA, Ip=0 mA Leakage Current Collector-Emitter | logo 5 50 | nA Vegei0 V, Ip=0, Collector-Base | logo 2 mons Capacitance, Collector-Emitter Cog 10 pF Vog=0 Package : OC Current Transfer Ratio CTR 20 60 % Voe=10 V, fp=10 mA Capacitance, Input to Output Cro 0.6 pF Resistance, Input to Output Rio 100 GA. Switching Time ton torr 3.0 ps ig=2 MA, Ag=100 Q, Vog=10 V MCT270 through MCT277Characteristics T,=25C _ Emitter ar Symbol | Min. | Typ. | Max. | Uni Condition Forward Voltage Ve J15 [Vv lp=20 mA Reverse Current Ip 10 pA VR=3 V Capacitance Co 25 pF Va=0, f=1 MHz Detector : Breakdown Voltage Coliector-Em*itter | BVgeq |. 30 v io=10 pA, Ie=0 mA Emitter-Cotlector | BVecq) |.7 Ie=10 pA, Ip=O MA - Collector-Base | BVggo | 70 lo=t0 pA, Ip=0 mA Leakage Current, Callector-Emitter \cEO 450. | nA, NVoe=t0V, [p=O.mA Package OC Current Transfer Ratio MCT270 cTA 50 . |% Vce= 0 V, Ip=10 mA MGT271 45 $0. MCT272 75 150 MCT273 125 250 MCT274 225 400 MCT275 70 210 MCT276 15 60 _| MCT277 100 a Current Transfer-Ratio, Collector-Emitter, | MCT27 1-276 CTRoe . | 12.5 % Vcge=0.4.V, lp=16 mA : MCT277 40 Collector-Emitter Saturation Voltage Voesat 0.4 |v Iog=2 MA, |p=16 MA Capacitance, input to Output Cio 0.5 pF Resistance, input to Output Rio 101? Ww Vio=500 VDC Switching Time MCT270/272 ton: torr 10 | ps Io=2 MA, Re=100 , MCT271 7 Voe=5V MCT273 20 MCT274 25 MCT275/277 16 MCT276 3.5 Phototransistor, Single Channel, industry StandardFigure 1. Forward voltage-ve: forwar-current wt 1.4 > 1.3 5 12 S11 z 1.0 Ta = 25C Teo" IF - Forward Current - mA Figure 2. Normatized non-atutated sh saturated CTR, Taser we: LED cxirrwnt 18 oe 5 Normalized to: Vee = 10V, IF =|tomA, Ta = 26C} sg CTRee(sat) Ved = 0.4V wt Normitzed CTR 5 05 st aE ~ | NCTRISAT) _NCTR 0.0 i 0 1 10 _HF-LED Current: mA Figufe 3. Normalized non-eaturated and saturated cTR Taz50r ve. LED current: a: > PNonmallzedito: Vee = 10V;1IF.= 10mA, Tq = 26C 3 CTRee(satVce=0.4V |. 10 faa z Tas 50C Ds & of z . : x 05 | ~ a E , eINCTR(SAT) an | TarjNCTR 0.0 aies os = ; 4 10 e405 > IF- LED Current - mi Figure 4:Nermatized norventunited and sekurstet . cTRA, TARTOG v vs. LED current $6 To: F [Vee = 10V] IF = toma Wa a 5 10 f- 7 : 05 f : 1 r =70O . @: 5 c _INCTA(SAT) | - NCTR . | A gh ee AO "400 IF - LED Current - m Figure 5. Normalized rion-saturated atid saturated 5 CTA, Tax85C vs. LED current " oF at 18! . j NCTR ~ iF - LED Current - mA _ Figure 8. Cotectanramitter current vs. temperature and LED current 2: - # I: 8 0 10 20 aS8a ss ao a weg 7 at 30 40 50 60 (F-LED Current- mA Phototransistor, Single Channel, Industry StandardFigure 7. Collector-emitter leakage:current ve. temp. Saas cers ite. GT ~ 10 "a4 10 Z 10 104 10! 10 3 1071 10% 20 0 Ta- Ambient Temperature -C Figure 8. Normalized CTRichb vs. LED current and temp. Normalized to: IF =10 mA Veb=9.3V - 1.0. F-~Ta = 26C 05 LW : ac Fie 50C oo 710 0.0 pt i ptt 1. AQ 100 IF + LED Gurrent- mA Figure 9. Normalized photocurrent va. if and temperature 10 ___ : F Normalized y {f= 10ma, ao 25;C Y 1 Tas: fot Nb, Tan25/C : e y siite| Nib,TasS0j\C .. bone p Nib;Tas70i6 01 he i 4 Semeatilbehis 4 1 / hte 100 #-LED + mA Figure 13. Switching timing ip fou Figure 10. Normatizad nor-saturated HFE.vs. base 12 3 f pn 20C -Nornalized to: 5 Ib = 20pA 10 = 2503 rVce = 10 V7 : [aetna if Ta = 25C 20C 08 ' 06 5 04 are Ib - Base Current - pA Figure 11. Normalized HFE vs. base current and temp. . T_| Normalized to: _ Vee = 10V to = 20pA Ta =,25C = [ Vee = 0.4V hn, 0.0 4 Loot ii rT a_aaeees deh 1 10 100 1000 lb - Base Current - pA Figure 12. Propagation delay vs. collector load resistor 1000 Fas 25C, IF = 10m F Voc =5V, Vih=1.5 i O A oj pj 5 3 oS vew co tpLH TTT a te 10, 100 RL - Collector Load Resisior- KO Figure 14, Switching schematic Voc =5V F = 10 KHz, Re OF = 90% Ir = one Vo Phototransistor, Single Channel, Industry Standard