ICs for Mobile Communication
1
Publication date: December 2001 SDM00002BEB
AN6091SA
Quadrature modulation IC for mobile communications
■Overview
The AN6091SA is a quadrature modulation IC
for 1.5 GHz band digital cellular telephone, and
incorporates a phase shifter, up-mixer and APC
function as well as a quadrature modulator.
■Features
•Low current consumption: 27 mA at VCC = 3 V
•APC built-in
•Excellent modulation precision characteristic
■Applications
•Cellular telephone
SSOP016-P-0225A
Unit: mm
■Block Diagram
18
0.50±0.20
(1.0)
0° to 10°
16
5.00±0.20
4.40±0.20
6.40±0.30
1.20±0.200.10±0.10
9
0.65
(0.225)
0.22
+0.10
–0.05
0.15
+0.10
–0.05
Seating plane
Lo2R
APC/BC
GND
GND
GND
P
O
16
15
14
13
12
11
10
9
V
CC
1
V
CC
2
3
Q
Q
4
I
I
6
5
GND
LPF
7
Lo1
8
GND
φ
Note) The package of this product will be changed to lead-free type
(SSOP016-P-0225E). See the new package dimensions section
later of this datasheet.
AN6091SA
2SDM00002BEB
■Pin Descriptions
Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: Ta = 80°C.
■Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply voltage VCC 4.2 V
Supply current ICC 60 mA
Power dissipation *2PD252 mW
Operating ambient temperature *1Topr −30 to +80 °C
Storage temperature *1Tstg −55 to +125 °C
■Recommended Operating Range
Parameter Symbol Range Unit
Supply voltage VCC 2.7 to 4.0 V
Pin No. Description
1V
CC (MOD)
2 Q input
3Q input
4 I input
5I input
6 GND
7 Lo1
8 GND
Pin No. Description
9 Lo2R
10 Lo2
11 APC/BS
12 GND
13 GND
14 GND
15 RF ouput
16 VCC (up-mixer)
■Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Outout level 1 PO1 Lo1 = 178 MHz, −15 dBm −16 −13 −10 dBm
Lo2 = 1
607 MHz, −20 dBm
VAPC = 2.3 V
Outout level 2 PO2 Lo1 = 178 MHz, −15 dBm −16 −13 −10 dBm
Lo2 = 1
631 MHz, −20 dBm
VAPC = 2.3 V
Current consumption ICC Lo1 = 178 MHz, −15 dBm 27 35 mA
Lo2 = 1
619 MHz, −20 dBm
VAPC = 2.3 V
Sleep current ISL No signal 010µA
VAPC = 0 V
AN6091SA
3
SDM00002BEB
■Electrical Characteristics at Ta = 25°C (continued)
Parameter Symbol Conditions Min Typ Max Unit
Minimum output level PMIN Lo1 = 178 MHz, −15 dBm −50 −43 dBm
Lo2 = 1
619 MHz, −20 dBm
VAPC = 1.0 V
Note) VCC = 3.0 V
IQ signal amplitude: 0.5 V[p-p] (single phase), DC bias: 1.7 V, π/4 QPSK-modulated
PO1 output frequency: 1
429.0025 MHz
PO2 output frequency: 1
453.0025 MHz
PMIN output frequency: 1
441.0025 MHz
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter Symbol Conditions Min Typ Max Unit
Carrier leak suppression CL Lo1 = 178 MHz, −15 dBm −35 dBc
(fLO2 − fLO1) Lo2 = 1
619 MHz, −20 dBm
VAPC = 2.3 V, IQ: DC offset adjustment
Image leak suppression IL Lo1 = 178 MHz, −15 dBm −40 dBc
Lo2 = 1
619 MHz, −20 dBm
VAPC = 2.3 V, IQ: Level adjustment
Proximity spurious suppression DU Lo1 = 178 MHz, −15 dBm −70 −65 dBc
Lo2 = 1
619 MHz, −20 dBm
VAPC = 2.3 V
Base band distortion suppression BD ditto −40 dBc
Adjacent channel leak power BL1 ditto −45 −38 dBc
suppression (30 kHz detuning)
Adjacent channel leak power BL2 ditto −70 −60 dBc
suppression (50 kHz detuning)
Adjacent channel leak power BL3 ditto −65 dBc
suppression (100 kHz detuning)
APC variable width LAPC Lo1 = 178 MHz, −15 dBm 30 37 dB
Lo2 = 1
619 MHz, −20 dBm
VAPC = 1.0 V to 2.3 V
APC output level control SAPC Lo1 = 178 MHz, −15 dBm 46
dB/0.1 V
sensitivity Lo2 = 1
619 MHz, −20 dBm
VAPC = 1.0 V/1.6 V
In-band output level deviation ∆P Lo1 = 178 MHz, −15 dBm −1.5 +1.5 dB
Lo2 =
1
607 MHz to 1
631 MHz, −20 dBm
VAPC = 2.3 V
Modulation precision EVM Lo1 = 178 MHz, −15 dBm 2.0 %[rms]
Lo2 = 1
619 MHz, −20 dBm
VAPC = 2.3 V
Note) Unless otherwise specified, VCC = 3.0 V
IQ signal: 0.5 V[p-p] (single phase), DC bias: 1.7 V
BL1, BL2, BL3, EVM: π/4 QPSK-modulated
CL, IL, DU, BD, LAPC , SAPC , ∆P: PN9 stages
AN6091SA
4SDM00002BEB
■Technical Data
APC control voltage characteristics
01
APC control voltage (V)
Output level
PO (dBm)
Adjacent channel leak power suppression ACP 30 kHz, 50 kHz
(dBc)
Proximity spurious suppression DU (dBc)
−80
−50
−80
−90
−70
−40
−30
−70
−60
−50
−40
−30
−20
−10
0
23
Circuit off
PO
Ta = 80°C
Ta = 80°C
Ta = 25°C, 80°C
Ta = −30°C, 25°C
Ta = −30°C
ACP 30 kHz
Ta = 25°C
Ta = 80°C
−60
DU
ACP 50 kHz
Ta = 25°C, 80°C
Ta = −30°C
Ta = −30°C
Ta = −30°C, 25°C
Ta = −30°CTa = 25°C, 80°C
Test circuit: "■ Application Circuit Example"
VCC = 3.0 V
Ta = −30°C, 25°C, 80°C
Lo1: 178 MHz, −15 dBm
Lo2: 1
619 MHz, −20 dBm
IQ: 0.5 V[p-p] (single phase), 1.7 VDC
π/4, using PN9 stage continuous wave
Note) 1. Unless otherwise specified, the test conditions are same as the electrical characteristics.
2. The above characteristics are theoretical values based on the IC design and are not guaranteed.
AN6091SA
5
SDM00002BEB
■Application Circuit Example
Lo2
VAPC/BS
VCC
PO
1
000 pF
330 pF
10 µF
QQI I
Lo1
100 pF
2
200 pF
1
000 pF 1 pF
47 Ω
47 Ω
1.0 kΩ
100 pF
EHAFD1611
Matsushita Electronic
Components Co., Ltd.
330 pF 330 pF 330 pF 100 pF
16
15
14
13
12
11
10
9
1
2
3
4
6
5
LPF
7
8
φ
■New Package Dimensions (Unit: mm)
•SSOP016-P-0225E (Lead-free package)
4.40
±0.20
6.40
±0.20
1.20
±0.20
0.10
±0.10
5.00
±0.20
0.50
±0.20
0.22
+0.10
-
0.05
0.15
+0.10
-
0.05
0° to 10°
9
16
8
1
(1.00)
Seating plane Seating plane
(0.225) 0.65
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2001 MAR
