A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45 V
BVCEO IC = 5.0 mA 20 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 35 V 1.0 mA
hFE VCE = 5.0 V IC = 100 mA 20 120
GP
POUT
η
ηη
η
VCE = 35 V PIN = 400 mW f = 1025 to 1150 MHz
PULSE WIDTH = 10 µS DUTY CYCLE = 1.0%
10
4.0
35
dB
W
%
NPN SILICON RF MICROWAVE TRANSISTOR
MSC80917
DESCRIPTION:
The ASI MSC80917 is low level
Class-C, Comm on Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
• Omnigold™ Metalization System
• POUT 4.0 W Min.
• GP = 10 dB
MAXIMUM RATINGS
IC 1.0 A
VCE 37 V
PDISS 7.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 35 °C/W
PACKAGE STYLE .280 2L FL (B)
1 = COLLECTOR 2 = BASE 3 = EMITTER
1
2
3
