SIEMENS PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features Product Summary * Overload protection Overvoltage protection Voniaz) 63. OV * Current limitation . * Short circuit protection Operating voltage Vop(on) 4.5...34 V Overtemperature protection On-state resistance RON 3.6 mQ * Overvoltage protection (including load dump) * Fast deenergizing of inductive loads Load current (ISO) ; A(Iso) 108 A * Low ohmic inverse current operation Short circuit current limitation A.(SCp) 450 A * Reverse battery protection Current sense ratio h: hs 25 000 * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbp protection) * Electrostatic discharge (ESD) protection TO-218AB/5 Application Oo * Power switch with current sense diagnostic 5 feedback for 12V and 24V DC grounded loads * Most suitable for loads with high inrush current like Lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits 1 Straight leads Standard General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. | I eee +ip E ' Voltage Overvoltage Current Gate %e _ ' | source protection lirnit protection hk | i | Lele] | our) 1,5 | S Voltage Charge pump unclarped { | 7 sensor ind, foads L . Levet shifter Ind. 10% Current | Rectifier Output Sense | 2 gin Voltage = fF Load | ESD F-{ Logic detection | I | IN ' ' Temperature ' | sensor | 4 ' sts PROFET 2 ee a eee ee ee Lees end Vin l Ys t "ts Logic GND i 1) Additional external diode required for energized inductive loads (see page 659). Semiconductor Group 653 02.97Si EM ENS Target Data Sheet BTS 555 P Pin Symboi Function { OUT Oo Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!*) 2 IN | Input, activates the power switch in case of short to ground 3 Vbb + Positive power supply voltage, the tab is shorted to this pin. In high current applications the tab should be used for Vpp connection. 4 Is s Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 658) 5 OUT Oo Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!*) ) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at 7j = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 655) Von 52 Vv Supply voltage for full short circuit protection Voo 34 Vv Ti stat =-40 ...+150C: Load current (short circuit current, see page 656) A self-limited A Load dump protection Vicadpump = Uat Vs, Ug =13.5V RAH=2Q, RAL =0.13Q, fy=200ms, Vicad dump? 80 Vv IN, 1S= open or grounded Operating temperature range Tj -40 ...4150 C Storage ternperature range Tstg -55 ...+150 Power dissipation (DC), Tc < 25 C Prot 310 Ww Inductive load switch-off energy dissipation, single pulse Vpp = 12V, Tistart = 150C, To = 150C const. I, =20A, 2, =tbdmH, 02 Eas tbd J see diagrarris on page 660 Electrostatic discharge capability (ESD) Vesp 2.0 kV (Human Bocly Model) Current through input pin (DC) fin +15, -250| mA Current through current sense status pin (DC) hs +15, -250 see internal circuit diagrams on page 658 and 659 Thermal! resistance chip - case: | Rnuc <0.40| K/W junction - ambient (free air): | Rina <45 2) A, = internal resistance of the load dump test pulse generator. 3) Vioad duma is setup without the DUT connected to the generator per [SO 7637-1 and DIN 40839. Semiconductor Group 654SIEMENS Electrical Characteristics Target Data Sheet BTS 555 P Parameter and Conditions Symbol Values Unit at 7}=25C, Vbb = 12V unless otherwise specified min | typ | max Load Switching Capabilities and Characteristics On-state resistance (Pin 3 to pins 1,5) Vin =0, 1. =20A F=25C: | Aon - 3.1 3.6} mQ = 150C: 5.6 6.5 Nominal load current (Tab to pins 1,5) faso) 98 108 -- A ISO proposal: Von =0.5V, Te =85C Maximum Icad current in resistive range (Tab to pins 1,5) Von =2.5V, Te =25C: | fimaxs 400 -- -- A Von =4.5V, Te =150C: 400 - -- see diagram on page 661 Turn-on time*) lin 7 to 90% Vour: | ton 130 --| 550] us Turn-off time IIN Le to 10% Vour: | tor 60 --| 240 R.=1.5Q, Tj =-40...4150C Slew rate on*) (10 to 30% Vour) dWidton -- 0.8 --| Vis AL =1.5Q, (not tested, specified by design) Slew rate off*) (70 to 40% Vour) -dVidtor ~~ 0.8 --| Vus R_=1.5Q, (not tested, specified by design) Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) Vin =O, 4. =-20A F=25C: | Ronny _ 3.1 3.6 | mQ see diagram on page 660 W= 150C: 5.6 6.5 Nominal inverse load current (Pins 1,5 to Tab) hin 98] 108 -- A Von =-0.5V, Te =85C Operating Parameters) Operating voltage (Vin =0) Tj =-40...4150C: | Voojon) 4.0 - 34 Vv Undervoltage threshold ) Tj =-40...4150C: | Vana tn - -| 4.0 V Undervoltage start of charge pump see diagram page 663 Tj =-40...4150C: | Voin(ucp) -- 5 6.5 Vv Overvoltage protection) Fj =-40C: | Vow 60 - -- Vv fob = 40 MA Tj =25...+150C: 63 67 -- Standby current Tj =-40...425C: | hypioty -- 12 25| WA in =0 Tj =150C: - 18 60 4) See timing diagram on page 662. 5) Voi = Veb- Vin see diagram on page 658. 8) When Vin increases up to Vpin(ucp) = 5 V (typ.) the charge pump is not active and Vout =Vbb -3V. 7 See also Von(cl) in circuit diagram on page 659. Semiconductor Group 655SIEMENS Target Data Sheet BTS 555 P Parameter and Conditions Symbol Values Unit at T}=25C, Vbb = 12 V unless otherwise specified min | typ | max Protection Functions Short circuit current limit (Tab to pins 1,5) Von =12V, time until limitation max. 300 us Tc =-40C: | hsp) - 520 -- A Te =25C: tbd| 450 tbd Te =+150C: thd] 320 tbd Short circuit shutdown delay after input current positive slope, Von > Vonsc) Tj =-40..4150C: | fascy 80 --| 300| ys min. value valid only if input low" time exceeds 30 ps Output clamp (inductive load switch off) at Vout = Vob - Von(cL). i= 40 mA VoncL) 52 7 V Short circuit shutdown detection voltage (pin 3 to pins 1,5): Vonisc) -- 6 ~ Vv Thermal overload trip temperature Tht 150 - -- C Thermal hysteresis ATi -- 10 -- K Reverse Battery Reverse battery voltage ) -Voo - - 16; Vv On-state resistance (Pins 1,5 to pin 3) Rontrev) -| 3.6 --} mQ Vop=-12V, Vin=0, t.=-20A, Aig=1kQ, F=25C: Drain-source diode voltage (Vout > Vbb, IIN = 0) - Von -- tbd --| mV i. =-20A, Tj) =+150C Integrated resistor in Vbb line Pop --| 120 -- Q Diagnostic Characteristics Current sense ratio (static on-condition, Von <1V, Vis =0...5V) Kus =/L: his, Venton =6.5 ...34V%, Tj = -40...+150C 20A< i. <180A: | Kits 20.9k| 25k) 31k 10A< f <20A: 19.3k) 25k] 35.3k fin = 0: -- 0 - see diagram on page 661 Von>1V: -- x10) -- Sense current saturation Tj =-40...4150C: | Assim 6.5 -- --| mA Current sense leakage current lin =0, Vig=0 Tj =-40...4150C: fis) ~~ -- 1 uA Vin=0, Vs =0, 1. SO Tj =-40...4150C: | fsiny -- 50 -- 8) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (lIN =l!S =0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 659. 9) The voltage difference Vpp - Vig must exceed 2V! 10) Sense current is no longer proportional to the load current due to sense current saturation, see As,im . Semiconductor Group 656SIEMENS Target Data Sheet BTS 555 P Parameter and Conditions Symbol Values Unit at Tj=25C, Vbb = 12 V unless otherwise specified min | typ | max Current sense settling time after positive input slopa (90% of fis static) h.=0/20A: | bontis) -- tbd| 500) us (not tested, specified by design) Current sense settling time after negative input slope (10% of fis static) f, =20/0A: | torts) - tbd} 500 ps (not tested, specified by design) Current sense settling time after change of load current (60% to 90%) 1.=15/25A: | fects) -- thd); 500] us {not tested, specified by design) Input Required current capability of input switch") Tj =-40...4150C: | Axcony 3 - --| mA Input current for turn-off'2) T =-40...4150C: | fncoit ~ - 40/ WA 11) Choose the resistance between IN and GND iow enough so that the voltage Vpn exceeds 10V (typ., see Ron-diagram on page 661). 12) We recommend the resistance between IN and GND to be less than 3302 for turn-on and more than 850 kQ for turn-off. Consider that when the device is switched off (iy =0) the voltage between IN and GND reaches nearby Vpb. Semiconductor Group 657SIEMENS Target Data Sheet BTS 555 P Truth Table Input | Output Current current Sense level level is Normal L L 0 operation H H nominal Current- L L 0 limitation H H <nominal'? Short circuit to L L 0 GND H L 0 Over- L L 0 temperature H L iy Short circuit to L H Vbb H H <nominal 14) Open load L Z'5) 0 H H 0 Negative output L L 0 voltage clamp Inverse load L H 0 current H H 9 L = Low" Level H = High Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 663) Short circuit tc GND: Error signal latched until next turn on (see diagram on page 662) Terms | Voin Yop | bb Vp Von 1 IN PROFET OUT 15 is 4 _F} 's Your Input circuit (ESD protection) FT Tt Lal zD "op l l. 4s | 1 _ 1 [= | | | Le eit ee =n commen ae snl When the device is switched off (lin =0) the voltage between IN and GND reaches nearby Vbb. Vz.in = 67 V (typ). 13) Sense current is no longer proportiona! to the load current due to sense current saturation, see /js jim - 14) Low ohmic short to Von May reduce the output current /, and can thus be detected via the sense current 4s. 15) Power Transistor "OFF", potential defined by external impedance. Semiconductor Group 658SIEMENS Current sense status output | ky ' Rip as | Vas | i zD | Oz is Vz1s =67V (typ.), Aig = 1kQ nominal. Note: For large values of Ajg the voltage Vis can reach nearby Vbb. Short circuit detection Fauit Condition: Voy > 6V typ.; Vin =0 t | - Zs | Von 1 ' 7 y 4 | { [ow i Short circuit Logic | wt ~ detection aT ee [== {oo mtr ae =] + Yep t ok . | Y lh aw | Von | Tear [PROF Von clamped to Von(ch = 52 V typ. Semiconductor Group Target Data Sheet BTS 555 P Overvoltage protection of logic part ree se aa | 1 Vou Vois t pe Al4 Bs | {7} + Loglc | _ Vout tosh __PROFET | i Bs Signal GND Rbb = 120Q typ., Vzin = Vzis = 67V typ., Ais = 1kQ nominal. Note that when overvoltage exceeds 72 V typ. a voltage above 5V can occur between IS and GND. Reverse battery protection ignas GND Ay 21kQ, Aig =1kQ nominal. Add Ain for reverse battery protection in applications with Vbp above 16 V9); recommended value: Fin =(|Vbb|/12V -1)x 120Q. To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parailet to the input switch, by using a MOSFET input switch or by proper adjusting the current through Ais and Ry. Vbb disconnect with energized inductive load ~ IN PROFET OUT is az wr R wy s 1%. vi Provide a current path with load current capability by using a diode, a Z-diode or a varistor (Vz <52V)! a 659SIEMENS pe) v Vbb IN PROFET OUT Note that there is no reverse battery protection when using a diode between Vbb and ground. Inverse load current operation Pe] Vbb It Vv +] bb IN PROFET OUT . Is Vout v 1 nf ve | ns The device is specified for inverse load current operation (VOUT > Vib > OV). In this case, the power transistor is "ON" with VIN=0 (specifications see page 655). With lIN=0 only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. The current sense feature is not available during this kind of operation (lig = 0). Note: Temperature protection during inverse load current operation is not possible! o NS Semiconductor Group Target Data Sheet BTS 555 P inductive load switch-off energy dissipation Ebb 6 TT TL Ris PROFET OUT is | Energy stored in load inductance: B= lig-L-P White demagnetizing load inductance, the energy dissipated in PROFET is Eas= Epp + Ex - Ee f Vonycry* ip(t) at, with an approximate solution for Ry > 02: Ie Re .) Ik Vee EaS= 3p, (Yeo + Mouricy)) In (1+ ocr Maximum allowable load inductance for a single switch off Lsf(tp); Tj, start = 150C, Vpp = 12 V, Ry = 02 L [mH] 40000 1000 12.5 15 I {Al 660SIEMENS Characteristics Current sense vergus foad current: 6.0 5 ima] 5 5.0 + 454 4.0 4 3.5 | 3.0 + 25 4 2.0 4 1.5 - 1.0 4 O5+4Y | L ppuiit 0.0 Aap ys 0 20 40 60 80 100 120 140 [A] 180 Current sense ratio: 50000 +E 40000 4 20000 + 10000 -f E O Pepe pep 0 20 40 60 80 100 120 140 160 [A] Semiconductor Group 661 Target Data Sheet BTS 555 P Typ. current limitation characteristic TL =f (VON, Tj) A TA} 1000 900 800 700 600 500 400 300 200 100 10 45 Von [V] Typ. on-state resistance Ron =f (Vbb, Tj); t= 204; Vin =0 Ron [mOhmj 10 Voo [V]SIEMENS Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: tot | a EK r tsle(Is) } | | tsle(ts) | HP Ge Bee | | i | Load1 ;} Load2 | | | i Ta | tson(IS) I l 0 t l< soff(ls}>|fe The sense signal is not valid during a settling time after tum-orvoff and after change of oad current. lis Figure 2a: Switching motors and lamps: L lis [\ ; Sense current saturation can occur at very high inrush currents (see 11S,lim on page 656). Semiconductor Group Target Data Sheet BTS 555 P Figure 2b: Switching an inductive load: Figure 3a: Short circuit: shut down by short circuit detection, reset by lin =O. Error signal stays latched until next tum on 662SIEMENS Target Data Sheet BTS 555 P Figure 4a: Overtemperature Reset if Tj<Tj Abn | | | | | | | ay 3 - Los lis | | I | | > | Vour | | | | ! | | t a Figure 6a: Undervoltage restart of charge pump, overvoltage clamp Vout a Q z 6 > Semiconductor Group 663SIEMENS Target Data Sheet BTS 555 P Package and Ordering Code All dimensions in mm Standard TO-218AB/5 TO-218AB/5 Option E3146 Ordering code | pTssssP | Q67060-tbd-bd _||[_BTSsssP E3146 | Q67060-tbd-tbd I 15 ey K- 14.8 | jm 14.8 oJ +i 10.8 5 FY 10.8 : [ei ffi. 4.04 zh iT | : 1 h | fe Loe ; aT s ~ 2 oO | n > 2 y 1 i th { = | 1. at fara al = T7 - 4 Ht 23 it | 4 | ot HUHUA os 1 s s|LUi he | fst (yu tia * | e254 ~ Ce o54 hensds 108 | 2) dip linning 1) punch direction, burr max. 0.04 3) mox. 15 by dip tinning press burr mex. 0.05 412.54510.16 1) punch direction, burr max. 0.04 2) dip finning 3) max. 15.5 by dip tinning prass burr mex. 0.05 Semiconductor Group 664