MCM6206DJ20 - Motorola / Freescale Semiconductor

MCM6206D

MOTOROLA FAST SRAM

32K x 8 Bit Fast Static RAM

The MCM6206D is fabricated using Motorola’s high–performance silicon–gate

CMOS technology. Static design eliminates the need for external clocks or timing

strobes, while CMOS circuitry reduces power consumption and provides for

greater reliability.

This device meets JEDEC standards for functionality and pinout, and is avail-

able in plastic dual–in–line and plastic small–outline J–leaded packages.

•Single 5 V ±10% Power Supply

•Fully Static — No Clock or Timing Strobes Necessary

•Fast Access Times: 12, 15, 20, and 25 ns

•Equal Address and Chip Enable Access Times

•Output Enable (G) Feature for Increased System Flexibility and to

Eliminate Bus Contention Problems

•Low Power Operation: 125 – 140 mA Maximum AC

•Fully TTL Compatible — Three State Output

BLOCK DIAGRAM

A0 A2 A5 A10 A12 A13 A14

A11

MEMORY MATRIX

256 ROWS x

128 x 8 COLUMNS

ROW

DECODER

INPUT

DATA

CONTROL

COLUMN I/O

COLUMN DECODER

DQ0

DQ7

VCC

VSS

Order this document

by MCM6206D/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PIN ASSIGNMENT

MCM6206D

A12

A13

A11

DQ0 DQ6

A14

A10

DQ7

DQ4

DQ5

DQ1

DQ2

DQ3

A0 – A14 Address Input. . . . . . . . . . . . .

DQ0 – DQ7 Data Input/Data Output. . .

W Write Enable. . . . . . . . . . . . . . . . . . . .

GOutput Enable. . . . . . . . . . . . . . . . . . .

EChip Enable. . . . . . . . . . . . . . . . . . . . . .

VCC Power Supply (+ 5 V). . . . . . . . . . .

VSS Ground. . . . . . . . . . . . . . . . . . . . . . .

P PACKAGE

300 MIL PLASTIC

CASE 710B–01

J PACKAGE

300 MIL SOJ

CASE 810B–03

PIN NAMES

REV 1

5/95

 Motorola, Inc. 1994

MCM6206D

2MOTOROLA FAST SRAM

TRUTH TABLE (X = Don’t Care)

EG W Mode VCC Current Output Cycle

H X X Not Selected ISB1, ISB2 High–Z –

L H H Output Disabled ICCA High–Z –

L L H Read ICCA Dout Read Cycle

L X L Write ICCA High–Z Write Cycle

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage VCC – 0.5 to + 7.0 V

Voltage Relative to VSS For Any Pin

Except VCC Vin, Vout – 0.5 to VCC + 0.5 V

Output Current Iout ±20 mA

Power Dissipation PD1.0 W

Temperature Under Bias Tbias – 10 to + 85 °C

Operating Temperature TA0 to + 70 °C

Storage Temperature—Plastic Tstg – 55 to + 125 °C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for ex-

tended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ±10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Typ Max Unit

Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V

Input High Voltage VIH 2.2 — VCC + 0.3** V

Input Low Voltage VIL – 0.5*— 0.8 V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)

**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20 ns)

DC CHARACTERISTICS

Parameter Symbol Min Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) —±1µA

Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC) Ilkg(O) —±1µA

Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V

Output Low Voltage (IOL = 8.0 mA) VOL — 0.4 V

POWER SUPPLY CURRENTS

Parameter Symbol – 12 – 15 – 20 – 25 Unit

AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) ICCA 140 135 130 125 mA

AC Standby Current (E = VIH, VCC = Max, f = fmax) ISB1 40 35 35 30 mA

CMOS Standby Current (VCC = Max, f = 0 MHz, E ≥ VCC – 0.2 V

Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V) ISB2 20 20 20 20 mA

CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically sampled rather than 100% tested)

Characteristic Symbol Max Unit

Address Input Capacitance Cin 6 pF

Control Pin Input Capacitance (E, G, W) Cin 8 pF

I/O Capacitance CI/O 8 pF

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.

This CMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear

feet per minute is maintained.

MCM6206D

MOTOROLA FAST SRAM

AC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ±10%, TA = 0 to + 70°C, Unless Otherwise Noted)

Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .

Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input Rise/Fall Time 5 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . .

Output Load Figure 1A Unless Otherwise Noted. . . . . . . . . . . . . . . .

READ CYCLE (See Note 1)

– 12 – 15 – 20 – 25

Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes

Read Cycle Time tAVAV 12 — 15 — 20 — 25 — ns 2

Address Access Time tAVQV — 12 — 15 — 20 — 25 ns

Enable Access Time tELQV — 12 — 15 — 20 — 25 ns 3

Output Enable Access Time tGLQV — 6 — 8 — 10 — 12 ns

Output Hold from Address Change tAXQX 4 — 4 — 4 — 4 — ns 4,5,6

Enable Low to Output Active tELQX 4 — 4 — 4 — 4 — ns 4,5,6

Enable High to Output High–Z tEHQZ 0 7 0 8 0 9 0 10 ns 4,5,6

Output Enable Low to Output Active tGLQX 0 — 0 — 0 — 0 — ns 4,5,6

Output Enable High to Output High–Z tGHQZ 0 6 0 7 0 8 0 10 ns 4,5,6

Power Up Time tELICCH 0 — 0 — 0 — 0 — ns

Power Down Time tEHICCL — 12 — 15 — 20 — 25 ns

NOTES:

1. W is high for read cycle.

2. All timings are referenced from the last valid address to the first transitioning address.

3. Addresses valid prior to or coincident with E going low.

4. At any given voltage and temperature, tEHQZ (max) is less than tELQX (min), and tGHQZ (max) is less than tGLQX (min), both for a

given device and from device to device.

5. Transition is measured ±500 mV from steady–state voltage with load of Figure 1B.

6. This parameter is sampled and not 100% tested.

7. Device is continuously selected (E = VIL, G = VIL).

AC TEST LOADS

OUTPUT

Z0 = 50

Ω

VL = 1.5 V

Figure 1A Figure 1B

5 pF

+5 V

OUTPUT

255

Ω

480

Ω

TIMING LIMITS

The table of timing values shows either a

minimum or a maximum limit for each param-

eter. Input requirements are specified from

the external system point of view. Thus, ad-

dress setup time is shown as a minimum

since the system must supply at least that

much time (even though most devices do not

require it). On the other hand, responses from

the memory are specified from the device

point of view . Thus, the access time is shown

as a maximum since the device never pro-

vides data later than that time.

MCM6206D

4MOTOROLA FAST SRAM

READ CYCLE 1 (See Note 7)

Q (DATA OUT)

A (ADDRESS)

DATA VALIDPREVIOUS DATA VALID

tAVAV

tAXQX

tAVQV

READ CYCLE 2 (See Note 3)

ISB

ICC

tEHQZ

tEHICCL

DATA VALID

tGHQZ

tAVAV

tELQX

tELQV

E (CHIP ENABLE)

Q (DATA OUT)

A (ADDRESS)

tELICCH

tAVQV

tGLQX

tGLQV

G (OUTPUT ENABLE)

VCC

SUPPLY CURRENT

HIGH–Z HIGH–Z

MCM6206D

MOTOROLA FAST SRAM

WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)

– 12 – 15 – 20 – 25

Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes

Write Cycle Time tAVAV 12 — 15 — 20 — 25 — ns 3

Address Setup Time tAVWL 0 — 0 — 0 — 0 — ns

Address Valid to End of Write tAVWH 10 — 12 — 15 — 20 — ns

Write Pulse Width tWLWH,

tWLEH 10 — 12 — 15 — 20 — ns

Write Pulse Width,

G High tWLWH,

tWLEH 10 — 10 — 12 — 15 — ns 4

Data Valid to End of Write tDVWH 6 — 7 — 8 — 10 — ns

Data Hold Time tWHDX 0 — 0 — 0 — 0 — ns

Write Low to Output High–Z tWLQZ 0 6 0 7 0 8 0 10 ns 5,6,7

Write High to Output Active tWHQX 4 — 4 — 4 — 4 — ns 5,6,7

Write Recovery Time tWHAX 0 — 0 — 0 — 0 — ns

NOTES:

1. A write occurs during the overlap of E low and W low.

2. If G goes low coincident with or after W goes low, the output will remain in a high impedance state.

3. All timings are referenced from the last valid address to the first transitioning address.

4. If G ≥ VIH, the output will remain in a high impedance state.

5. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.

6. Transition is measured ±500 mV from steady–state voltage with load of Figure 1B.

7. This parameter is sampled and not 100% tested.

WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)

DATA VALID

tDVWH

tAVWL

tAVWH

tAVAV

tWHAX

tWLWH

tWHDX

tWLQZ tWHQX

HIGH–Z HIGH–Z

A (ADDRESS)

W (WRITE ENABLE)

E (CHIP ENABLE)

Q (DATA OUT)

D (DATA IN)

tWLEH

MCM6206D

6MOTOROLA FAST SRAM

WRITE CYCLE 2 (E Controlled, See Note 1)

– 12 – 15 – 20 – 25

Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes

Write Cycle Time tAVAV 12 — 15 — 20 — 25 — ns

Address Setup Time tAVEL 0 — 0 — 0 — 0 — ns

Address Valid to End of Write tAVEH 10 — 12 — 15 — 20 — ns

Enable to End of Write tELEH,

tELWH 9 — 10 — 12 — 15 — ns 3,4

Data Valid to End of Write tDVEH 6 — 7 — 8 — 10 — ns

Data Hold Time tEHDX 0 — 0 — 0 — 0 — ns

Write Recovery Time tEHAX 0 — 0 — 0 — 0 — ns

NOTES:

1. A write occurs during the overlap of E low and W low.

2. All timings are referenced from the last valid address to the first transitioning address.

3. If E goes low coincident with or after W goes low, the output will remain in a high impedance state.

4. If E goes high coincident with or before W goes high, the output will remain in a high impedance state.

WRITE CYCLE 2 (E Controlled, See Note 1)

tWLEH

tEHDX

tDVEH

tEHAX

tELWH

tELEH

tAVEL

tAVEH

DATA VALID

tAVAV

HIGH–Z

A (ADDRESS)

W (WRITE ENABLE)

E (CHIP ENABLE)

Q (DATA OUT)

D (DATA IN)

ORDERING INFORMATION

(Order by Full Part Number)

Motorola Memory Prefix

Part Number

Package (P = 300 mil Plastic DIP, J = 300 mil SOJ)

Shipping Method (R2 = Tape and Reel, Blank = Rails)

Speed (12 = 12 ns, 15 = 15 ns, 20 = 20 ns,

25 = 25 ns)

MCM 6206D X XX XX

Full Part Numbers — MCM6206DP12 MCM6206DJ12 MCM6206DJ12R2

MCM6206DP15 MCM6206DJ15 MCM6206DJ15R2

MCM6206DP20 MCM6206DJ20 MCM6206DJ20R2

MCM6206DP25 MCM6206DJ25 MCM6206DJ25R2

MCM6206D

MOTOROLA FAST SRAM

PACKAGE DIMENSIONS

CASE 710B–01

300 MIL PDIP

28 LEAD

0.25 (0.010) T B

0.25 (0.010) T A

MIN MINMAX MAX

MILLIMETERS INCHES

DIM

34.55

7.12

3.81

0.39

1.15

0.21

3.18

0.51

34.79

7.62

4.57

0.53

1.39

0.30

3.42

1.01

1.360

0.280

0.150

0.015

0.045

0.008

0.125

0.020

1.370

0.300

0.180

0.021

0.055

0.012

0.135

0.040

1.27 BSC

2.54 BSC

7.62 BSC

0.050 BSC

0.100 BSC

0.300 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

4. DIMENSION A AND B DOES NOT INCLUDE MOLD

FLASH. MAXIMUM MOLD FLASH 0.25 (0.010).

14 -B-

-A-

28 PL

-T-

SEATING

PLANE

CASE 810B–03

300 MIL SOJ

28 LEAD

MIN MINMAX MAX

MILLIMETERS INCHES

DIM

1.27 BSC

0.64 BSC

0.050 BSC

0.025 BSC

18.29

7.50

3.26

0.39

2.24

0.67

—

0.89

0.76

8.38

6.60

0.77

18.54

7.74

3.75

0.50

2.48

0.81

0.50

1.14

8.64

6.86

1.01

0.720

0.295

0.128

0.015

0.088

0.026

—

0.035

0.030

0.330

0.260

0.030

0.730

0.305

0.148

0.020

0.098

0.032

0.020

0.045

0.340

0.270

0.040

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. DIMENSION A & B DO NOT INCLUDE MOLD

PROTRUSION. MOLD PROTRUSION SHALL NOT

EXCEED 0.15 (0.006) PER SIDE.

3. CONTROLLING DIMENSION: INCH.

4. DIM R TO BE DETERMINED AT DATUM -T-.

5. 810B-01 AND -02 OBSOLETE, NEW STANDARD

810B-03.

KDETAIL Z

DETAIL Z

S RAD

-B-

-A- P

0.10 (0.004)

SEATING PLANE

-T-

0.25 (0.010) T S

0.18 (0.007) MTS

0.18 (0.007) T S

24 PL

H BRK

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

MCM6206D

8MOTOROLA FAST SRAM

Literature Distribution Centers:

USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MCM6206D/D

*MCM6206D/D*

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