ZXGD3112N7
400V ACTIVE OR-ING MOSFET CONTROLLER IN SO7
Description
The ZXGD3112N7 is a 400V active ORing MOSFET controller
designed for driving a very low RDS(ON) power
MOSFET as an ideal
diode. This replaces the standard rectifier
to reduce the forward
voltage drop and overall increase the power transfer eff ici ency.
The ZXGD3112N7 can be used on both high-side and low-
side power
supply units (PSU) with rails up to ±400V. It enables very low RDS(ON)
MOSFETs to operate as ideal diodes as the turn-off threshold
is
only -3mV with ±2mV tolerance. In the typical 48V
configuration, the
standby power consumption is <50
mW as the low quiescent supply
current is <1mA. During PSU fault condition, the ORing c
ontroller
detects the power reduction and rapidly turns off the MOSFET in
<600ns to block reverse current flow
and avoid the common bus
voltage dropping.
Applications
Active ORing Controller in:
• (N + 1) Redundant Power Supplies
• Telecom and Networking
• Data Centers and Servers
Features
• Active OR-ing MOSFET Controller for High- or Low-Side PSU
• Ideal Diode to Reduce Forward Voltage Drop
• -3mV Typical Turn-Off Threshold with ±2mV Tolerance
• 400V Drain Voltage Rating
• 25V VCC Rating
• <50mW Standby Power with Quiescent Supply Current <1mA
• <600ns Turn-Off Time to Minimize Reverse Current
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SO-7
• Case Material: Molded Pl ast ic. “Green” Molding Com pound.
UL Flammabilit y Rating 94V-0
• Moisture Sensitivi t y: Level 1 per J-STD-020
• Terminals: Finish—Matte Tin Plated Leads, Sol derabl e per
MIL-STD-202, Method 208
• Weight: 0.074 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantit y per Reel
ZXGD3112N7TC
ZXGD3112
13
12
2500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes I ncorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SO-7
Top View
Pin-Out
GATE
GND
PGND
GND
Vcc
PGND
DRAIN
1
2
3
4
5
6
7
ZXGD = Product Type Marking Code, Line 1
3112 = Product Type Marking Code, Line 2
YY = Year (ex: 1
8 = 2018)
WW = Week (01
to 53)
ZXGD
3112
YY WW
ZXGD3112N7
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ZXGD3112N7
Pin Functions
Pin Number
Pin Name
Pin Function and Description
1, 2 GND
Ground
Connect this pin to the MOSFET source terminal and ground reference poi nt.
3 VCC
Power Supply
This supply pin should be closely decoupled to ground with a X7R type capacitor.
4 GATE
Gate Drive
This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. If VCC > 12V, then the GATE-to-GND
will clamp at 12V. The turn on time of the MOSFET can be programmed through an external gate resistor (RG).
5, 6 PGND
Power Ground
Connect this pin to the MOSFET source terminal and ground reference poi nt.
7 DRAIN
Drain Sense
Connect this pin to the MOSFET drain terminal to detect the change in drain-sourc e voltage.
Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25°C, unless otherwise speci f i ed.)
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
25
V
Drain Pin Voltage
V
D
-3 to 400
V
Gate Output Voltage**
VG
-3 to VCC + 3
V
Gate Driver P eak Source Current
ISOURCE
2
A
Gate Driver Peak Sink Current
ISINK
5
A
**Gate voltage is clamped to 12V.
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Fact or
(Note 5)
PD
490
3.92
mW
mW/°C
(Note 6)
655
5.24
(Note 7)
720
5.76
(Note 8)
785
6.28
Thermal Resistance, Junction to Ambient
(Note 5)
RϴJA
255
°C/W
(Note 6)
191
(Note 7)
173
(Note 8)
159
Thermal Resistance, Junction to Lead
(Note 9)
R
ϴJL
135
°C/W
Operating and Storage Tem perature Range
T
J
, T
STG
-50 to +150
°C
ESD Rating s (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge—Human Body Model
ESD HBM
2000
V
3A
Electrostat ic Discharge—Machine Model
ESD MM
200
V
B
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note 5, except pin 3 (VCC) and pins 5 & 6 (PGND) are both conne c ted to sep ar at e 5mm × 5mm 1oz copper heat-sinks.
7. Same as Note 6, except both heat-sinks are 10mm × 10mm.
8. Same as Note 6, except both heat-sinks are 15mm × 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 & 3 (GND) and pins 5 & 6 (VCC).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11.
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Thermal De rating Curve
020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 15mm x 15mm
5mm x 5mm
Minimum
Layout
Derating Curve
Jun ction Temperature (
O
C)
M ax Power Dissipation (W )
10mm x 10mm
Electrical Characteristics (@ VCC = 12V, TA = +25°C, unless otherwise specifi ed.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Supply
Operating Supply Voltage
VCC
4
—
20
V
—
Quiescent Current
IQ
—
260
400
µA
-0.6V ≤ VDRAIN ≤ 400V
Drain Low Input Current
IDL
-100
-15
—
nA
VD = -0.1V
Drain High Input Current
IDH
—
0.85
10
µA
VD = 400V
Gate Driver
Gate Peak Source Current
ISOURCE
—
0.66
—
A CL = 47nF
Gate Peak Sink Current
ISINK
—
3.3
—
Gate Peak Source Current (Note 11)
ISOURCE
1
—
—
A
VGATE = 5V & VDRAIN = -1V
Gate Peak Sink Current (Not e 11)
ISINK
1.8
—
—
A
VGATE = 5V & VDRAIN = 1V
Detector Under DC Condition
Turn-Off Threshold Voltage
VT
-5
-3
-1
mV
VG ≤1V
Load: 50nF capacitor
connect ed in parallel
with 50kΩ resistor
Gate Output Voltage
VG(OFF) — 0.1 0.3
V
V
DRAIN
≥ 0mV &
VCC = 12V
VG 10.5 10.85 — VDRAIN = -8mV &
VCC = 12V
VG(OFF) — 0.1 0.3
V
DRAIN
≥ 0mV &
VCC = 4V
VG 2.5 2.85 —
V
DRAIN
= -8mV &
VCC = 4V
VG(OFF) — 0.1 0.3
V
DRAIN
≥ 0mV &
VCC = 20V
VG 10.5 11.2 —
V
DRAIN
= -8mV &
VCC = 20V
Switching Performan ce
Turn-On Propagation Del ay
tD(RISE)
—
400
—
ns CL = 47nF
Rise and Fall Measured 10% to 90%
Refer to Applicati on Test Circuit Below
Gate Rise Time
tR
—
695
—
Turn-Off Propagation Delay
tD(FALL)
—
400
—
Gate Fall Time
tF
—
131
—
Note: 11. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
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Layout Considerations
The GATE pin must be close to the MOSFET gate to minimize trace resist ance and inductance to maximize switchi ng performance while the VCC to
GND pin requires an X7R type capacitor closely decoupling the supply. Trace widths must be maximized in the high current paths through the
MOSFET and ground return i n order to minimize the effects of circuit resistance and inductance. Also, the ground ret urn loop must be as short as
possibl e. For thermal cons ideration, the m ain heat path is from pin 3 (VCC) and pins 5 & 6 (PGND). For best thermal performance, the copper area
connect ed to pin 3 ( VCC) and pi ns 5 & 6 (PGND) must be max imized.
Active OR ing or (N+1) Redundanc y Application
PSU
(A)
OR-ing Rectifier
Common +ve Bus
OR-ing Rectifier
PSU
(B)
LOAD
+ve Rail
GND
Figure 1
Critical systems require fault-tolerant power supply that can be achieved by paralleling two or more PSUs into (N+1) redundancy configuration.
During normal operation, usually all PSUs equally share the load for maximum reliability. If one of the PSU is unplugged or fails, t he other PSUs
fully support the load. To avoid the faulty PSU from affecting the comm on bus, an ORing rectifier bloc ks the reverse current flow into the faulty PSU.
Likewise during hot-swapping, the ORing rectifiers isolate a PSU’s discharged output capacitors from the common bus.
As t h e load c urrent is in the tens of amps, a standard rectifier has a significant forward voltage drop. This both wastes power and significantly drops
the potential on low voltage rails. Hence, very low RDS(ON) power MOSFETs can replace the standard rectifiers, and the ZXGD3112 controls the
MOSFET as an ideal diode.
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ZXGD3112N7
Functional Bloc k Diagram
GATE
Vcc
GND
Driver
ZXGD3112
+
Differential
amplifier
-
Threshold
voltage
DRAIN
PGND
Figure 2
The device is comprised of a differential ampl ifier and high current driver. The dif ferential amplifier acts as a detector and monitors the DRAIN-to-
GND pin voltage difference. W hen this difference is less than the t hreshold voltage (VT), a po sit ive output voltage approaching VCC is given on the
GATE pin. If VCC > 12V, the GATE-to-GND clamps at 12V. Conversely, when the DRAIN-to-GND pin voltage difference is greater than VT, the
GATE pin voltage rapidly reduces towards the GND voltage.
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Typical Application Circuits
The focus applicati on of the ZXGD3112 ORing controller is for redundant low-side -200v power supply rail (see Figure 3). HV to 12V regulator or a
potential divider is recommended to power the VCC of ZXGD3112 from high voltage lines.
Figure 3
Figure 4 shows an example of the ZX GD3112 oring control l er in a redundant high-side +200V power supply rail using an additional VCC supply.
Figure 4
ZXGD3112N7
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ZXGD3112N7
Operation in Typical Application
The ZXGD3112 operation is described st ep-by-st ep with reference to the typical application circuits and the timing diagram is shown in Figure 5:
1. The ZXGD3112 differential amplifier monitors the MOSFET’s drain-source voltage (VDS).
2. At s ystem st art up, the MOSFET body diode is forced to conduct current from t he input PSU to the load and VDS is approximat ely -0.6V
as mea sured by the differential amplif i er between DRAIN-to-GND pins.
3. As V DS < VT (threshol d voltage), the diff erential amplifier outputs a positive voltage approaching VCC with res pect to GND. T his feeds the
driver stage from which the GATE pin voltage rises towards VCC. If VCC > 12V, the GATE -to-GND will clamp at 12V.
4. The sourcing current out of the GATE pin drives the MOSFET gate to enhance the channel and turn it on.
5. If a short condit i on occurs on the input PSU, i t c auses the MOSFET VDS to increase.
6. When VDS > VT, the diff erential amplifier’s output goes to GND and the driver stage rapidly pulls the GATE pin voltage to GND, turning off
the MOSFET channel. This prevents high reverse current flow from the load to the PSU, which can pull down the common bus voltage
causing catastrophi c s ystem f ailure.
MOSFET
Drain Voltage
V
DS
MOSFET
Gate Voltage
V
GS
MOSFET
Drain Current
t
D(RISE)
V
T
V
GND
t
R
t
F
t
D(FALL)
I
D
V
GND
V
CC
0A
-0.6V
Figure 5
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ZXGD3112N7
Typical Electrical Characteristics
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
0
2
4
6
8
10
12
14
16
18
20
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
0
2
4
6
8
10
-50 050 100 150
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
-50 -25 025 50 75 100 125 150
400
800
1200
1600
2000
020 40 60 80 100
0
100
200
300
400
500
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
0
2
4
6
8
10
12
14
16
18
20
V
CC
= 4V
Capacitive load and
50kΩ pull down resistor
V
CC
= 20V
V
CC
= 12V
V
CC
= 10V
Transfer Ch aracteristic
V
G
G ate V oltage (V)
V
D
Drain Voltage (mV)
TA = 150
O
C
T
A
= 25
O
C
TA = 85
O
C
T
A
= 125
O
C
T
A
= -50
O
C
Transfer Ch aracteristic
V
G
G ate V oltage (V)
V
D
Drain Voltage (mV)
VCC = 12V
50kΩ pull dow n
V
CC
= 12V
V
G
= 1V
50kΩ pull down
D rain S ense Vo ltage v s Tem perature
V
D
Drain Voltage (m V )
Tem perature (
O
C)
T
OFF
= t
D2
+ t
F
T
ON
= t
D1
+ t
R
Switching vs Tem perature
S witching Tim e (ns)
Tem perature (
O
C)
V
CC
= 12V
C
L
=47nF
VCC = 4V
V
CC
= 10V VCC = 12V
VCC = 20V
Supply C urrent vs Capacitive Load
Capacitan ce (nF)
S upply C urrent (m A)
f=250kHz
Capacitive load only
V
CC
= 4V
V
CC
= 20V
V
CC
= 12V
V
CC
= 10V
Transfer Ch aracteristic
V
G
G ate V oltage (V)
V
D
Drain Voltage (mV)
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ZXGD3112N7
-1.0 -0.5 0.0 0.5 1.0 1.5 2.0
-2
0
2
4
6
8
10
12
-1.0 -0.5 0.0 0.5 1.0 1.5 2.0
-2
0
2
4
6
8
10
12
110 100
300
600
900
1200
-1 012345
0.0
0.2
0.4
0.6
0.8
1.0
110 100
0
2
4
10 100 1000 10000 100000
0.1
1
10
100
-150
-100
-50
0
50
100
150
-150
-100
-50
0
50
100
150
54 53 52 51 50
0
-1
-2
-3
-4
-5
V=12V
C
L
=47nF
V
D
Switch O ff Speed
G ate V oltage (V)
Time (µs)
V
G
DrainVoltage (mV )
Drain Voltage (m V)
V=12V
C
L
=47nF
V
G
V
D
Switch O n Speed
G ateV oltage (V)
Time (µs)
V
CC
=12V
T
ON
= t
D1
+ t
R
T
OFF
= t
D2
+ t
F
Switch ing vs C apacitive Lo ad
Time (ns)
Capacitan ce (n F)
Sin k C urrent Time Scale (µs)
G ate Drive Sink Current (A)
V=12V
C
L
=47nF
I
SOURCE
I
SINK
G ate D rive C urrent
G ate Drive Source Current (A)
Sou rce C urrent Time Scale (µ
s)
V
CC
=12V
I
SINK
G ate C urren t vs C apacitive Load
P eak D rive Current (A )
Capacitan ce (n F)
-ISOURCE
C
L
=100nF
C
L
=47nF
C
L
=10nF
C
L
=4.7nF
C
L
=1nF
V
CC
=12V
Supply Current vs Frequency
Frequen cy (Hz)
S upply C urrent (m A)
ZXGD3112N7
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ZXGD3112N7
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-7
SO-7
Dim
Min
Max
Typ
A2
1.40
1.50
1.45
A1
0.10
0.20
0.15
b
0.30
0.50
0.40
c
0.15
0.25
0.20
D
4.85
4.95
4.90
E
5.90
6.10
6.00
E1
3.80
3.90
3.85
E1a
3.85
3.95
3.90
e
—
—
1.27
h
—
—
0.35
L
0.62
0.82
0.72
Q
0.60
0.70
0.65
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-7
Dimensions
Value
(in mm)
C
1.270
X
0.802
X1
4.612
Y
1.505
Y1
6.500
1
b
e
E
A2
A1
9° ( All sides)
4°±3°
c
Q
h
45°
R 0.1
7°
DE1a
E1
L
Seating Plane
Gauge Plane
CX
Y
Y1
X1
ZXGD3112N7
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark ri ghts, nor the rights of others. Any Customer or user of this document or products descri bed herein in such applicat ions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harml ess against all damages.
Diodes Incorporated does not warrant or acc ept any li ability whatsoever in respect of any products purchased t hrough unaut hori zed sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemni fy an d
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associat ed with such unintended or unauthorized appl i cation.
Products desc ribed herein may be covered by one or more United S tates, international or f oreign patents pending. Product names an d ma rkings
noted herein may also be covered by one or more United States, international or f orei gn trademarks.
This document is written in English but may be translated into multiple languages f or reference. Only the Englis h version of this doc ument is t he
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are s pecifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in signifi cant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectivenes s.
Customers represent that they have all nec essary expertise in the safety and regulat ory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safet y-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
Copyright © 2018, Diode s Incorporated
www.diodes.com
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