BUV11N Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)160 V(BR)CBO (V)220 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (oC)200o I(CBO) Max. (A)1.5m/ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.60 @I(C) (A) (Test Condition)8.0 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq8.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time.1.2u(R) t(r) Max. (s) Rise time t(on) Max. (s) On time.