Parameter Parameter Typical Value Units Conditions
Threshold voltage @ Id=1mA/mm, Vd=10V Vto -3.4 V 25°C
Breakdown voltage @ Id=1mA/mm VDG 160 V25°C
Drain-source current, Id @ Vd=10V, Vg=0 Idss 800 mA/mm 25°C
Operating Junction Temperature TJ225 °C
Storage Temperature TSTG -65, +150 °C
Thermal Resistance, Junction to Case (packaged) RθJC °C/W
Thermal Resistance, Junction to Case (die only) RθJC °C/W
Mounting Temperature (30 seconds) TS320 °C 30 seconds
Parameter Parameter Typical Value Units Conditions
DC Characteristics
Ohmic contact resistance RC 0.3 Ohm-mm 25°C
Maximum Drain-source current, Id @ Vd=10V, Vg=1V
(1X125μm device) Idmax 1000 mA/mm 25°C
Max. trans-conductance, @ Vd=10V, Vg=-4V ~ -1V
(1X125μm device) GM_PEAK 290 mS/mm 25°C
Maximum Drain-source current, Id @ Vd=10V, Vg=1V
(1X125μm device) Idmax 1000 mA/mm 25°C
RF Characteristics
Small Signal Gain GSS >12 dB VDD=48V, IDQ=600mA
Saturated Power Output PSAT 104 W VDD=48V, IDQ=600mA
Drain Efficiency η>60 % VDD=48V, IDQ=600mA
Intermodulation Distortion IM3 <-30 dBc VDD=48V, IDQ=600mA
Output Mismatch Stress VSWR 10:1 ψ
Absolute Maximum Ratings (not simultaneous) at 25˚C
Electrical Characteristics
((Frequency = 3.5 GHz unless otherwise stated; TC = 25˚C)
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Rev.2.0 Jan./2018