HMC864 v01.0110 Typical Applications Features The HMC864 is ideal for: Saturated Output Power: +31 dBm @ 18% PAE * Point-to-Point Radios High Output IP3: +40 dBm * Point-to-Multi-Point Radios High Gain: 27 dB * VSAT DC Supply: +6V @ 750mA * Military & Space No External Matching Required TE Die Size: 2.41 x 1.65 x 0.1 mm Functional Diagram General Description B SO LE The HMC864 is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 24 and 29.5 GHz. The HMC864 provides 27 dB of gain, and +31 dBm of saturated output power and 18% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750mA [1] O Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Parameter Min. Frequency Range Gain 24 Gain Variation Over Temperature Input Return Loss Output Return Loss Max. Min. 27 Saturated Output Power (Psat) (IP3)[2] Total Supply Current (Idd) 27 Typ. 27 - 29.5 22 Max. Units GHz 25 dB 0.021 0.027 dB/ C 27 25 dB 19 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Typ. 24 - 27 14 dB 29 dBm 30 dBm 39 40 dBm 750 750 mA 29 31 27 [1] Adjust Vgg between -2 to 0V to achieve Idd = 750mA typical. [2] Measurement taken at +6V @ 750mA, Pout / Tone = +19 dBm 3-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain vs. Temperature 34 20 32 0 GAIN (dB) S21 S11 S22 -10 28 26 24 TE -20 22 -30 +25C +85C -55C 20 -40 18 21 24 27 30 24 FREQUENCY (GHz) 25 27 28 29 30 LE Output Return Loss vs. Temperature 0 0 -5 +25C +85C -55C -5 -10 +25C +85C -55C -20 -25 -30 -40 24 B SO -15 -35 25 26 27 28 29 -10 -15 -20 -25 24 30 25 33 31 31 P1dB (dBm) 33 29 27 +25C +85C -55C 25 27 28 29 30 29 30 P1dB vs. Supply Voltage O P1dB vs. Temperature 26 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 26 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 3 30 10 29 27 6.0V 5.5V 5.0V 25 23 Amplifiers - Linear & Power - Chip 30 RETURN LOSS (dB) RESPONSE (dB) Broadband Gain & Return Loss vs. Frequency 23 24 25 26 27 28 FREQUENCY (GHz) 29 30 24 25 26 27 28 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Psat vs. Supply Voltage 33 31 31 Psat (dBm) 33 29 27 6.0V 5.5V 5.0V 25 23 23 24 25 26 27 28 29 30 24 25 27 28 29 30 29 30 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) Psat vs. Supply Current (Idd) 33 33 31 27 B SO 29 Psat (dBm) 31 700mA 750mA 800mA 25 23 24 25 26 27 28 29 29 700mA 750mA 800mA 27 25 23 30 24 25 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +19 dBm 26 27 28 FREQUENCY (GHz) O Output IP3 vs. Supply Current, Pout/Tone = +19 dBm 46 46 +25C +85C -55C 700mA 750mA 800mA 44 IP3 (dBm) IP3 (dBm) 26 LE FREQUENCY (GHz) 44 42 40 42 40 38 38 36 36 24 25 26 27 28 FREQUENCY (GHz) 3-3 29 TE +25C +85C -55C 27 25 P1dB (dBm) Amplifiers - Linear & Power - Chip 3 Psat (dBm) Psat vs. Temperature 29 30 24 25 26 27 28 29 30 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +19 dBm Output IM3 @ Vdd = +5V 46 60 6.0V 5.5V 5.0V 50 3 IM3 (dBc) IP3 (dBm) 40 42 40 30 24 GHz 26 GHz 28 GHz 29 GHz TE 20 38 10 36 0 24 25 26 27 28 29 30 12 FREQUENCY (GHz) 16 18 22 24 26 22 24 26 LE Output IM3 @ Vdd = +6V 60 60 50 50 40 24 GHz 26 GHz 28 GHz 29 GHz 10 0 12 14 16 18 20 22 24 IM3 (dBc) 30 B SO 40 20 30 24 GHz 26 GHz 28 GHz 29 GHz 20 10 0 26 12 14 16 18 Pout/TONE (dBm) 35 0 REVERSE ISOLATION (dB) 30 25 20 15 Pout Gain PAE 10 20 Pout/TONE (dBm) Reverse Isolation vs. Temperature O Power Compression @ 27 GHz Pout (dBm), GAIN (dB), PAE (%) 20 Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V IM3 (dBc) 14 5 0 Amplifiers - Linear & Power - Chip 44 -10 +25C +85C -55C -20 -30 -40 -50 -60 -15 -12 -9 -6 -3 0 INPUT POWER (dBm) 3 6 9 24 25 26 27 28 29 30 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain & Power vs. Supply Current @ 27 GHz Gain & Power vs. Supply Voltage @ 27 GHz GAIN (dB), P1dB (dBm), Psat (dBm) 35 Gain (dB) P1dB (dBm) Psat (dBm) 33 31 27 25 700 Gain (dB) P1dB (dBm) Psat (dBm) 33 31 29 TE 29 27 25 720 740 760 780 800 5 5.2 5.4 5.6 5.8 6 Vdd (V) LE Idd (mA) Power Dissipation 24 GHz 25 GHz 26 GHz 27 GHz 28 GHz 5.5 B SO POWER DISSIPATION (W) 6 5 4.5 4 -15 -12 -9 -6 -3 0 3 6 INPUT POWER (dBm) Absolute Maximum Ratings O Amplifiers - Linear & Power - Chip 3 Gain (dB), P1dB (dBm), Psat (dBm) 35 Drain Bias Voltage (Vd) +6.5V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +26 dBm +5.0 750 150 C +5.5 750 +6.0 750 Continuous Pdiss (T= 85 C) (derate 75 mW/C above 85 C) 4.85 W Thermal Resistance (channel to die bottom) 13.4 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 750mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3-5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] O [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size .002 Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vgg Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 100 pF, 0.1 F and 4.7 F are required. 3, 5 Vdd1, 2 Drain bias for amplifier. External bypass caps 100 pF, 0.1F and 4.7 F are required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Amplifiers - Linear & Power - Chip B SO LE TE 3 Interface Schematic Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 3-6 HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Assembly Diagram 3-7 TE LE B SO O Amplifiers - Linear & Power - Chip 3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC864 v01.0110 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Wire Bond 0.076mm (0.003") TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Figure 1. LE Handling Precautions 0.127mm (0.005") Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. B SO Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. O Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 Amplifiers - Linear & Power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 3-8