RFSW2042D RFSW2042D DC to 20GHz GaAs SP3T Switch DC TO 20GHz GaAs SP3T SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD's RFSW2042D is a reflective SP3T GaAs microwave monolithic integrated circuit (MMIC) switch designed using the RFMD FD05 0.5m switch process. The RFSW2042D is developed for broadband communications, instrumentation, and electronic warfare. RFSW2042D RF1 Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET RFC Applications V3 V1 RF2 InGaP HBT V5 V2 Si BiCMOS SiGe BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT V6 V4 Low Insertion Loss: 1.6dB at 20GHz High Isolation: 42dB at 20GHz Excellent Return Loss 19nS Switching Speed GaAs pHEMT Technology Broadband Communications Test Instrumentation Fiber Optics Military Aerospace RF3 GaN HEMT InP HBT RF MEMS LDMOS Parameter Operating Frequency Insertion Loss (0GHz to 5GHz) Insertion Loss (5GHz to 10GHz) Insertion Loss (10GHz to 15GHz) Insertion Loss (15GHz to 20GHz) Isolation (DC to 20GHz) Input Return Loss (DC to 20GHz) Output Return Loss (DC to 20GHz) IIP3 IIP2 Switching Speed Control Current Control Voltage Min. Specification Typ. DC 39 11 9 30 53 -3 1.4 1.3 1.5 1.6 42 14 12 34 59 19 30 -5 Max. 20 1.7 1.8 2 2.1 25 50 -8 Unit GHz dB dB dB dB dB dB dB dBm dBm ns uA VDC Condition ON State ON State ON State ON State ON State (Measured at Inactive Port) ON State ON State 100MHz spacing 2dBm input 100MHz spacing 2dBm input 50% control to 90% RF Sum of all control lines RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS110216 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 RFSW2042D Absolute Maximum Ratings Parameter Drain Bias Voltage (VCTRL) RF Input Power Rating Unit -10 VDC +30 dBm Storage Temperature -40 to +150 C Operating Temperature -40 to +85 C ESD JESD22-A114 Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1A (All Pads) Typical Electrical Performance Insertion Loss over Temperature (High = -5V, Low = 0V) Input Return Loss over Temperature (High = -5V, Low = 0V) 0 0 -0.3 -2.5 -0.6 -5 -0.9 -7.5 25C dB -1.2 85C -40C -1.5 dB -15 -2.1 -17.5 0 5 10 15 20 85C -40C -12.5 -1.8 -2.4 25C -10 -20 25 0 5 10 GHz 15 20 25 GHz Isolation over Temperature (High = -5V, Low = 0V) Output Return Loss over Temperature (High = -5V, Low = 0V) 0 0 -10 -3 -20 -6 -30 25C dB -40 85C -40C -50 -9 25C dB -12 85C -40C -15 -18 -60 -21 -70 -24 0 -80 0 5 10 15 20 25 5 10 15 20 25 GHz GHz 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110216 RFSW2042D IIP3 (Low = 0V, 25C, +2dBm input) IIP3 (High = -5V, Low = 0V, +2dBm input) 40 38 38.5 37 37 36 35.5 -8V dBm 34 -5V -3V 32.5 35 25C 85C 33 31 32 29.5 31 28 -40C dBm 34 30 0 5 10 15 20 25 0 5 10 GHz 15 20 25 GHz IIP2 (High = -5V, Low = 0V, +2dBm input) IIP2 (Low = 0V, 25C, +2dBm input) 65 63 63 62 61 61 59 -8V dBm 57 -5V -3V 55 60 -40C dBm 59 25C 85C 58 53 57 51 56 55 49 0 5 10 15 GHz DS110216 20 25 0 5 10 15 20 25 GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 RFSW2042D Die Layout V1 V2 V3 GND RF1 GND GND GND 1974 RFin GND GND 95 905 1205 1055 RF2 RFSW2042D V5 V6 GND RF3 GND 135 V4 142 502 854 RF bondpads are 150x88 All other bondpads are 88x88 All units are in um 4 of 6 1180 1330 1480 1808 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110216 RFSW2042D Pin 1 Function RFIN Description Interface Schematic 2 RF1, RF2, RF3 RF output. This pad is DC coupled and matched to 50 from DC to 20GHz. 3 V1, V2, V3, V4, V5, V6 DC control pad for switch operation. Nominal operating voltage is -5V. RF input. This pad is DC coupled and matched to 50 from DC to 20GHz. RFIN RFout 2kohm 5pF 4 GND Provides ground path for probe measurements. Truth Table Control Line RF Path V1 V2 V3 V4 V3 V4 0 -5 -5 -5 0 0 -5 0 0 -5 -5 0 RFIN - RF1 RFIN - RF2 -5 -5 0 0 0 -5 RFIN - RF3 -5 -5 0 -5 0 0 RFOFF (High Isolation) High=-3V to -8V (-5V nominal), Low=0, 0.2V Measurement Technique All specifications and typical performances reported in this document were based on data taken with the equipment listed in the stated manner. Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was 125um (5mil). The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire attachment. Therefore, all data represents the part and accompanying bondwires. Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA. IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA. DS110216 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 RFSW2042D Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Ordering Information 6 of 6 Part Number Description Delivery Method RFSW2042DSB Sample, DC to 20GHz GaAs SP3T Switch Gel Pak 2 pc RFSW2042DSQ Small Quantity, DC to 20GHz GaAs SP3T Switch Gel Pak 25 pc RFSW2042D DC to 20GHz GaAs SP3T Switch Gel Pak 10 pc 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Quantity DS110216