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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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Is Now Part of
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©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.7
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) c an reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
Internal Block Diagram
#3 VCC
32V
5
μ
A
9V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
27V
Thermal S/D
S
RQ
Power on reset
+
−
L.E.B
S
RQ
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
TO-220F-4L
1. GND 2. Drain 3. VCC 4. FB
1
KA5X03XX-SERIES
2
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13μH, starting Tj = 25°C
Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Gate Voltage (RGS=1MΩ)V
DGR 650 V
Gate-Source (GND) Voltage VGS ±30 V
Drain Current Pulsed (1) IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID3.0 ADC
Continuous Drain Current (TC=100°C) ID2.4 ADC
Single Pulsed Avalanche Energy (2) EAS 358 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation PD75 W
Derating 0.6 W/°C
Operating Junction Temperature. TJ+150 °C
Operating Ambient Temperature. TA-40 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Gate Voltage (RGS=1MΩ)V
DGR 800 V
Gate-Source (GND) Voltage VGS ±30 V
Drain Current Pulsed (1) IDM 12.0 ADC
Continuous Drain Current (TC=25°C) ID3.0 ADC
Continuous Drain Current (TC=100°C) ID2.1 ADC
Single Pulsed Avalanche Energy (2) EAS 95 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation PD75 W
Derating 0.6 W/°C
Operating Junction Temperature. TJ+150 °C
Operating Ambient Temperature. TA-40 to +85 °C
Storage Temperature Range. TSTG -55 to +150 °C
KA5X03XX-SERIES
3
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 650 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max. Rating, VGS=0V - - 50 μA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C- - 200 μA
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω
Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 720 -
pFOutput Capacitance Coss - 40 -
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 150 -
nS
Rise Time tr - 100 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 42 -
Total Gate Charge
(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is essentially
independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.3 -
Gate-Drain (Miller) Charge Qgd - 13.3 -
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 800 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max. Rating, VGS=0V - - 250 μA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C- - 1000 μA
Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω
Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input Capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 779 -
pFOutput Capacitance Coss - 75.6 -
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-40-
nS
Rise Time tr - 95 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 60 -
Total Gate Charge
(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.2 -
Gate-Drain (Miller) Charge Qgd - 12.1 -
S1
R
----
=
KA5X03XX-SERIES
4
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage VSTART VFB=GND 14 15 16 V
Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V
OSCILLATOR SECTION
Initial Accuracy FOSC KA5H0365R
KA5H0380R 90 100 110 kHz
Initial Accuracy FOSC KA5M0365R
KA5M0380R 61 67 73 kHz
Initial Accuracy FOSC KA5L0365R
KA5L0380R 45 50 55 kHz
Frequency Change With Temperature (2) --25°C≤Ta≤+85°C-±5±10 %
Maximum Duty Cycle Dmax KA5H0365R
KA5H0380R 62 67 72 %
Maximum Duty Cycle Dmax
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
72 77 82 %
FEEDBACK SECTION
Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 456μA
REFERENCE SECTION
Output Voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/ΔT-25°C≤Ta≤+85°C-0.30.6mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection VOVP VCC>24V 25 27 29 V
Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C
TOTAL STANDBY CURRENT SECTION
Start-up Current ISTART VCC=14V - 100 170 μA
Operating Supply Current
(Control Part Only) IOP VCC<28 - 7 12 mA
KA5X03XX-SERIES
5
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
110
0.1
1
10
@Notes:
1. 300
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
24681
0
0.1
1
10
@Not es:
1. V
DS
= 30V
2. 300
μ
s Pulse Test
-25
o
C
25
o
C
150
o
C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
012345
0
1
2
3
4
5
6
7
@ Note : Tj=25
℃
Vgs=10V
Vgs=20V
RDS( on) , [Ω]
Drain-Source On-Resistance
ID,Drain Current [A]
0.40.60.81.01.
2
0.01
0.1
1
@Notes :
1. VGS = 0 V
2. 300
μ
s Pulse Test
25
o
C150
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
Crss
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 2
5
0
2
4
6
8
10
V
DS
=520V
V
DS
=320V
V
DS
=130V
@ Note : I
D
=3.0A
V
GS
,Gate-Source Voltage[V]
Q
G
,Total Gate Charge [nC]
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
KA5X03XX-SERIES
6
Typical Performance Characteristics (Continued)
(KA5H0365R, KA5M0365R, KA5L0365R)
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
T
J
, Junction Temperature [
o
C]
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
- 50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes:
1. V
GS
= 10V
2. I
D
= 1.5 A
T
J
, Junction Temperature [
o
C]
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
100
μ
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limite d by R
DS(on)
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
JC
(t)
Z
θ
JC
(t) , Thermal Response
t
1
, Square Wav e Pulse Duration [sec]
Figure 7. Breakdown Voltage vs. Te mperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
KA5X03XX-SERIES
7
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
10
0
10
1
10
-1
10
0
10
1
@ N otes:
1. 300μs Pulse Test
2. T
C
= 25
o
C
V
GS
T op : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom :4.5V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
@ Notes:
1. V
DS
= 30 V
2. 30 0
μ
s Pulse Test
-25
o
C25
o
C
150
o
C
I
D
, Drain Current [A]
V
GS
, G a te -S o u rc e V o lta g e [V ]
0.4 0.6 0.8 1.0
0.1
1
10
@ Notes:
1. V
GS
= 0V
2. 3 00
μ
s Pulse Test
25
o
C
150
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
800
900
1000
C
rs s
C
oss
C
is s
C
is s
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rs s
= C
gd
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25 30
0
2
4
6
8
10
@ N ote : I
D
=3.0A
V
DS
= 640V
V
DS
=400V
V
DS
=160V
V
GS
,Gate-Source Voltage[V]
Q
G
,Total Gate C harge [nC]
01234
0
1
2
3
4
5
6
7
8
Vgs= 10V
Vgs= 20V
@ N ote : T j= 2 5
℃
Fig3. On-Resistance vs. D rain C urrent
R
D S(on)
, [Ω]
Drain-Source On-R esistance
I
D
,D ra in C u rre n t
Figure 1. Output Characteristics Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
KA5X03XX-SERIES
8
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
JC
(t)
Z
θ
JC
(t) , Thermal Response
t
1
, Square Wave Pulse Duration [sec]
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
T
J
, Junction Temperature [
o
C]
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
@ Notes:
1. V
GS
= 10V
2. I
D
= 1.5 A
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100
μ
s
DC
10
μ
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
ID , Drain Current [A]
VDS , Drain- Source Voltage [V]
40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
KA5X03XX-SERIES
9
Typical Performance Characteristics (Control Part) (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Figure 1. Operating Frequency Figure 2. Feedback Source Curre nt
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Fosc
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Ifb
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Iop
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Iover
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Istart
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Vstart
KA5X03XX-SERIES
10
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Vstop
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Dmax
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Vsd
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Idelay
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Vovp
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Vz
KA5X03XX-SERIES
11
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
0.00
0.50
1.00
1.50
2.00
2.50
3.00
-40 -25 0 25 50 75 100 125 150
Temperature [℃]
Rds(on)
Figure13. Static Drain-Source on Resist ance
KA5X03XX-SERIES
12
Package Dimensions
TO-220F-4L
KA5X03XX-SERIES
13
Package Dimensions (Continued)
TO-220F-4L(Forming)
KA5X03XX-SERIES
6/3/08 0.0m 001
Stock#DSxxxxxxxx
© 2003 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU :Non Forming Type
YDTU : Forming type
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0365RTU TO-220F-4L 5H0365R 650V 100kHz 3.6Ω
KA5H0365RYDTU TO-220F-4L(Forming)
KA5M0365RTU TO-220F-4L 5M0365R 650V 67kHz 3.6Ω
KA5M0365RYDTU TO-220F-4L(Forming)
KA5L0365RTU TO-220F-4L 5L0365R 650V 50kHz 3.6Ω
KA5L0365RYDTU TO-220F-4L(Forming)
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0380RTU TO-220F-4L 5H0380R 800V 100kHz 4.6Ω
KA5H0380RYDTU TO-220F-4L(Forming)
KA5M0380RTU TO-220F-4L 5M0380R 800V 67kHz 4.6Ω
KA5M0380RYDTU TO-220F-4L(Forming)
KA5L0380RTU TO-220F-4L 5L0380R 800V 50kHz 4.6Ω
KA5L0380RYDTU TO-220F-4L(Forming)
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a)
are intended for surgical implant into the body or (b) support or
sustain life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semic onductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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Definition of Terms
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change
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Preliminary First Production
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No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only. Rev. I57
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