Vishay Siliconix
SiA449DJ
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
•
Thermally Enhanced PowerPAK
®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
•100 % R
g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Providing low voltage drop in
Smart Phones, Tablet PCs,
Mobile Computing:
- Power Management
- Charger Switches
- Load Switches
- DC/DC Converters
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.)
- 30
0.020 at VGS = - 10 V - 12a
23.1 nC0.024 at VGS = - 4.5 V - 12a
0.038 at VGS = - 2.5 V - 12a
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
Ordering Information:
SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Marking Code
X X X
BWX
Lot Traceability
and Date code
Part # code
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 12a
A
TC = 70 °C - 12a
TA = 25 °C - 10.4b, c
TA = 70 °C - 8.3b, c
Pulsed Drain Current (t = 300 µs) IDM - 30
Continuous Source-Drain Diode Current TC = 25 °C IS
- 12a
TA = 25 °C - 2.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
19
W
TC = 70 °C 12
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t 5 s RthJA 28 36 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5
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Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
Vishay Siliconix
SiA449DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 µA - 30 V
VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 22 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ 3
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS - 5 V, VGS = - 10 V - 10 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 6 A 0.0155 0.0200
VGS = - 4.5 V, ID = - 5 A 0.0185 0.0240
VGS = - 2.5 V, ID = - 2 A 0.0264 0.0380
Forward Transconductanceagfs VDS = - 15 V, ID = - 6 A 31 S
Dynamicb
Input Capacitance Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
2140
pFOutput Capacitance Coss 168
Reverse Transfer Capacitance Crss 155
Total Gate Charge Qg
VDS = - 15 V, VGS = - 10 V, ID = - 10.4 A 48 72
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 10.4 A
23.1 35
Gate-Source Charge Qgs 2.5
Gate-Drain Charge Qgd 6.2
Gate Resistance Rgf = 1 MHz 0.6 3.3 6.6
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 1.8
ID - 8.3 A, VGEN = - 10 V, Rg = 1
816
ns
Rise Time tr10 20
Turn-Off Delay Time td(off) 39 60
Fall Time tf816
Tur n - O n D e l ay T im e td(on)
VDD = - 15 V, RL = 1.8
ID - 8.3 A, VGEN = - 4.5 V, Rg = 1
26 40
Rise Time tr28 42
Turn-Off Delay Time td(off) 44 66
Fall Time tf816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 12 A
Pulse Diode Forward Current ISM - 30
Body Diode Voltage VSD IS = - 8.3 A, VGS = 0 - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 8.3 A, dI/dt = 100 A/µs, TJ = 25 °C
19 30 ns
Body Diode Reverse Recovery Charge Qrr 12 20 nC
Reverse Recovery Fall Time ta12 ns
Reverse Recovery Rise Time tb7
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
www.vishay.com
3
Vishay Siliconix
SiA449DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
6
12
18
24
30
0 0.5 1 1.5 2
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS
= 10 V thru 3V
VGS = 2 V
0.010
0.016
0.022
0.028
0.034
0.040
0 6 12 18 24 30
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 2.5 V
VGS = 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS
= 15 V
VDS
= 9.6 V
VDS = 8 V
ID = 10.4 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0.2
0.4
0.6
0.8
1
0 0.45 0.9 1.35 1.8
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
700
1400
2100
2800
3500
0 3 6 9 12
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.6
0.82
1.04
1.26
1.48
1.7
- 50 - 25 0 25 50 75 100 125 150
RDS(on) - On-Resistance (Normalized)
TJ - Junction Temperature (°C)
VGS = 4.5 V, 5 A
VGS = 10 V, 6 A
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Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
Vishay Siliconix
SiA449DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
1.0
10.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS - Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
0.45
0.6
0.75
0.9
1.05
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ - Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
D
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
100 ms
Limited by RDS(on)*
1 ms
TA = 25 °C BVDSS Limited
10 ms
100 μs
10 s, 1s
DC
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
www.vishay.com
5
Vishay Siliconix
SiA449DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
7
14
21
28
0 25 50 75 100 125 150
ID - Drain Current (A)
TC - Case Temperature (°C)
Power Junction-to-Case
0
6
12
18
24
0 25 50 75 100 125 150
Power (W)
TC - Case Temperature (°C)
Power Junction-to-Ambient
0
0.5
1
1.5
2
0 25 50 75 100 125 150
Power (W)
TA - Ambient Temperature (°C)
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Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
Vishay Siliconix
SiA449DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62644.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2
10-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10-1
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
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Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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