Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package F 115 Watts device F Excellent safe operating area Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO Collector- Emitter Voltage 100 Vdc V CER V CB V EB IC IB Collector- Emitter Voltage Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Base Current 70 Vdc 100 Vdc 7 Vdc 15 Adc 7 Adc Thermal Characteristics : 1.52 C/W R thjc Thermal resistance junction to case PD Total Power Dissipation @ Tc = 25 C Derate above 25 C Operating and Storage Junction Temperature Range Tj & T Stg 115 Watta 0.657 W /C -65 C ....+ 200 C ELECTRICAL CHARACTERISTICS : [ Tc = 25 C unless otherwise noted ] Characteristic Symbol Min Typ Max Unit Off Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] Collector - Emitter Sustaining Voltage [ Ic = 200 mAdc , IB = 0 ] Collector - Emitter Sustaining Voltage [ Ic = 200 mAdc , RBE = 100 Ohms ] Collector Cutoff Current [ VCE = 30 Vdc , IB = 0 ] Collector Cutoff Current [ VCE = 100 Vdc , VBE(off) = 1.5 Vdc ] [ V CE = 100 V, VBE(off) = 1.5 Vdc , Tc = 150 C ] Emitter Base Leakage [ VEB = 7 Vdc , Ic = 0 ] VCEX(sus) 60 Vdc VCER(sus) 70 Vdc ICEO 0.7 mAdc 1 mAdc ICEX 5 IEBO 5 mAdc On Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] DC Current Gain [ Ic = 4 Adc , VCE = 4 Vdc ] [ Ic = 10 Adc , VCE = 4 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 4 Adc , IB = 400 mAdc ] [ Ic = 10 Adc , IB = 3.3 Adc ] Base-Emitter on Voltage [ Ic = 4 Adc , VCE = 4 Vdc ] hFE 20 5 70 VCE(sat) Vdc 1.1 3 VBE(on) Vdc 1.5 Dynamic Characteristics : Current Gain - Bandwidth Product [ I C = 0.5 Adc , VCE = 10 Vdc , f = 1 MHz ] Small signal current gain [ I C = 1 Adc , VCE = 4 Vdc , f = 1 KHz ] Small signal current gain cutoff frequency [ I C = 1 Adc , VCE = 4 Vdc , f = 1 KHz ] fT 2.5 MHz hfe 15 fhfe 10 KHz IS/b 2.87 Adc 120 Second Breakdown Characteristics : Second Breakdown Collector Current with Base Forward Biased t = 1 s [non-repetitive ] , VCE = 40 Vdc