IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 Boca Semiconductor Corp. BSC 2N6121, 6122, 6123 2N6124, 6125, 6126 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 B C E DIM MIN . A B C D E F G H J K L M N O 14.42 9.63 3.56 A O 3 K All dimin sions in mm. L N 1 2 O H F J D G M 3 MAX. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 1.5 A; VCE = 2 V VCBO VCEO IC Ptot Tj 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 4.0 max. 40 max. 150 V V A W C VCEsat max. 0.6 V hFE min. 25 max. 100 25 100 RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO http://www.bocasemi.com Continental Device India Limited Data Sheet 20 80 6121 6122 6123 6124 6125 6126 max. 45 60 80 max. 45 60 80 max. 5.0 V V V page: 1 Page 1 of 3 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 Collector current IC Collector current (Peak) ICM Base current IB Total power dissipation up to TC = 25C Ptot Derate above 25C Junction temperature Tj Storage temperature Tstg THERMAL RESISTANCE From junction to case max. max. max. max. max. max. A A A W mW/C C C 3.12 C/W Rth j-c CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 45 V IB = 0; VCE = 60 V IB = 0; VCE = 80 V VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 85 VEB(off) = 1.5 V; VCE = 45 VEB(off) = 1.5 V; VCE = 60 VEB(off) = 1.5 V; VCE = 80 mA IE = 0; VCB = 45 V IE = 0; VCB = 60 V IE = 0; VCB = 80 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1.5 A; IB = 0.15 A IC = 4 A; IB = 1.0 A Base-emitter on voltage IC = 1.5 A; VCE = 2 V D.C. current gain IC = 1.5 A; VCE = 2 V 4.0 7.0 1.0 40 320 150 -65 to +150 V V V V; V; V; 6121 6122 6123 6124 6125 6126 ICEO ICEO ICEO ICEX ICEX ICEX T C = 125C T C = 125C T C = 125C IC = 4 A; VCE = 2 V Small signal current IC = 0.1 A; VCE = 2 V; f = 1.0 KHz Transition frequency at f = 1 MHz IC = 1 A; VCE = 4 V max. 1.0 - max. - 1.0 max. - - max. 0.1 - max. - 0.1 max. - - ICEX max. 2.0 ICEX max. - ICEX max. - - - 1.0 - - 0.1 - 2.0 - ICBO ICBO ICBO max. 0.1 max. - max. - - 0.1 - - mA - mA 0.1 mA IEBO max. 1.0 mA VCEO(sus)* VCBO VEBO min. 45 min. 45 min. 60 60 5.0 VCEsat* VCEsat* max. max. 0.6 1.4 V V VBE(on)* max. 1.2 V hFE* min. 25 max. 100 25 100 20 80 hFE* min. 10 10 7.0 hfe min. 25 fT min. 2.5 80 80 mA mA mA mA mA mA - mA - mA 2.0 V V V MHz * Pulse test: pulse width 300 s; duty cycle 2%. http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3