Continental Device India Limited Data Sheet Page 1 of 3
2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS
2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector current ICmax. 4.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 1.5 A; IB = 0.15 A VCEsat max. 0.6 V
D.C. current gain
IC = 1.5 A; VCE = 2 V hFE min. 25 25 20
max. 100 100 80
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
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Boca Semiconductor Corp.
BSC
Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 4.0 A
Collector current (Peak) ICM max. 7.0 A
Base current IBmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Derate above 25°C max. 320
mW/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c 3.12 °C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 6121 6122 6123
6124 6125 6126
Collector cutoff current
IB = 0; VCE = 45 V ICEO max. 1.0 – – mA
IB = 0; VCE = 60 V ICEO max. – 1.0 – mA
IB = 0; VCE = 80 V ICEO max. – – 1.0 mA
VEB(off) = 1.5 V; VCE = 45 V ICEX max. 0.1 – – mA
VEB(off) = 1.5 V; VCE = 60 V ICEX max. – 0.1 – mA
VEB(off) = 1.5 V; VCE = 85 V ICEX max. – – 0.1 mA
V
EB(off)
= 1.5 V; V
CE
= 45 V; T
C
= 125°C
ICEXmax. 2.0 – – mA
V
EB(off)
= 1.5 V; V
CE
= 60 V; T
C
= 125°C
ICEXmax. – 2.0 – mA
V
EB(off)
= 1.5 V; V
CE
= 80 V; T
C
= 125°C
ICEXmax. – – 2.0
mAIE = 0; VCB = 45 V ICBO max. 0.1 – – mA
IE = 0; VCB = 60 V ICBO max. – 0.1 – mA
IE = 0; VCB = 80 V ICBO max. – – 0.1 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 45 60 80 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 1.5 A; IB = 0.15 A VCEsat* max. 0.6 V
IC = 4 A; IB = 1.0 A VCEsat* max. 1.4 V
Base-emitter on voltage
IC = 1.5 A; VCE = 2 V VBE(on)* max. 1.2 V
D.C. current gain
IC = 1.5 A; VCE = 2 V hFE* min. 25 25 20
max.100 100 80
IC = 4 A; VCE = 2 V hFE* min. 10 10 7.0
Small signal current
IC = 0.1 A; VCE = 2 V; f = 1.0 KHz hfe min. 25
Transition frequency at f = 1 MHz
IC = 1 A; VCE = 4 V fTmin. 2.5 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
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