NSD16F3T5G - ON Semiconductor

January, 2009 − Rev. 0

1Publication Order Number:

NSD16F3/D

NSD16F3T5G

Switching Diode

The NSD16F3T5G device is a spin−off of our popular SOT−23

three−leaded device. It is designed for switching applications and is

housed in the SOT−1123 surface mount package. This device is ideal

for low−power surface mount applications where board space is at a

premium.

Features

•Reduces Board Space

•This is a Halide−Free Device

•This is a Pb−Free Device

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR75 Vdc

Forward Current IF200 mAdc

Peak Forward Surge Current IFM(surge) 500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation, TA = 25°C

Derate above 25°C

(Note 1)

290

2.3

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

(Note 1)

432 °C/W

Total Device Dissipation, TA = 25°C

Derate above 25°C

(Note 2)

347

2.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

(Note 2)

360 °C/W

Thermal Resistance,

Junction−to−Lead 3

RYJL

(Note 2)

143 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. 100 mm2 1 oz, copper traces.

2. 500 mm2 1 oz, copper traces.

SOT−1123

CASE 524AA

STYLE 2

NSD16F3T5G

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping†

NSD16F3T5G SOT−1123

(Pb−Free)

8000/Tape & Reel

T = Device Code

M = Date Code

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

T M

ANODE

CATHODE

NSD16F3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 75 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

−

1.0

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR) 75 −Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD−2.0 pF

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR −1.75 Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr −6.0 ns

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)

QS−45 pC

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 W

0.1 mF

D.U.T.

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

NSD16F3T5G

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0.1

, FORWARD VOLTAGE (V)

0.01

VR, REVERSE VOLTAGE (V)

1.0

0.1

0.01

0.001

10 20 30 40 50

0.62

VR, REVERSE VOLTAGE (V)

0.60

0.56

0.50

0.48

CD, DIODE CAPACITANCE (pF)

246 8

IF, FORWARD CURRENT (mA)

Figure 2. VF vs. IFFigure 3. IR vs. VR

Figure 4. Capacitance

IR, REVERSE CURRENT (μA)

0.1

1.0

100

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

85°C

55°C

150°C

125°C

25°C

-40°C

-55°C

60 70

-40°C

150°C

125°C

85°C

55°C

25°C

0.52

0.54

0.58

1357

85°C

Cap

NSD16F3T5G

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PACKAGE DIMENSIONS

SOT−1123

CASE 524AA−01

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

DIM MIN NOM MAX

MILLIMETERS

A0.34 0.37 0.40

b0.15 0.20 0.25

c0.07 0.12 0.17

D0.75 0.80 0.85

E0.55 0.60 0.65

0.95 1.00 1.05

L0.05 0.10 0.15

0.013 0.015 0.016

0.006 0.008 0.010

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.037 0.039 0.041

0.002 0.004 0.006

MIN NOM MAX

INCHES

−Y−

−X−

0.08 (0.0032) XY

0.40

0.30

0.90

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

e0.35 0.014

b1 0.10 0.15 0.20 0.004 0.006 0.008

0.35

0.25

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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NSD16F3/D

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