1SS321
2017-10-26
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS321
Low-Voltage High-Spe ed Switching
AEC-Q101 Qualified (Note1)
Low forward voltage: VF(2) = 0.42 V (typ.)
Low reverse current: IR = 500 nA (max)
Small package: SC-59
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Maximum (peak) reverse voltage VRM 12 V
Reverse voltage VR 10 V
Maximum (peak) forward current IFM 150* mA
Average forward current IO 50* mA
Surge current (10 ms) IFSM 1000* mA
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to 125 °C
Note: Using continuously un der heavy loads (e.g. the applicat ion of high temperature/current/voltage and t he
significant c hange in temperature, etc.) may cause this product to decrease in the r eliability significantl y even
if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum
ratings.
Please design the appropriat e reliabilit y up on reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Conc ept and Methods”) and indivi dual reliabil i ty data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage
VF (1) IF = 1 mA ― 0.32 ―
V
VF (2) IF = 10 mA ― 0.42 ―
VF (3) IF = 50 mA ― 0.63 1.00
Reverse current IR VR = 10 V ― ― 500 nA
Total capacitance CT VR = 0 V, f = 1 MHz ― 3.2 4.5 pF
Marking
Unit: mm
JEDEC TO−236MOD
JEITA
SC−59
TOSHIBA
2-3F1S
Weight: 12 mg (typ.)
Start of commercial production
1987-10
1SS321
2017-10-26
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1SS321
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RESTRICTIONS ON PRODUCT USE
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