2SC2290 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2290 is a class A silicon NPN planar transistor, designed for SSB communications PACKAGE STYLE .500 4L FLG FEATURES: .112x45 * PG = 15 dB min. at 60 W/28.000 MHz * High linear power output * IMD = -30 dBc max. at 60 W(PEP) * OmnigoldTM Metalization System A E L C FULL R O.125 NOM. C B B E H E D G F MAXIMUM RATINGS I J IC 20 A VCBO 45 V VCEO 18 V VEBO 175 W @ TC = 25 C TJ -65 C to +175 C TSTG -65 C to +175 C JC 0.86 C/W SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E PDISS CHARACTERISTICS DIM B 4.0 V K F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .280 / 7.11 K .980 / 24.89 L 1.050 / 26.67 TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 100 mA 45 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V Cob VCB = 12.5 V GP C IMD IC = 10 A f = 1.0 MHz VCE = 12.5 V PIN = 2.5 W POUT = 60 W ICQ = 50 mA f1 = 28.000 MHz f2 = 28.001 MHz 10 150 --- --- 500 pF 11.8 13.8 dB 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. % -30 dBc REV. A 1/1