A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 18 V
BVCES IC = 100 mA 45 V
BVEBO IE = 1.0 mA 4.0 V
hFE VCE = 5.0 V IC = 10 A 10 150 ---
Cob VCB = 12.5 V f = 1.0 MHz --- 500 pF
GP
ηC
IMD
VCE = 12.5 V PIN = 2.5 W POUT = 60 W
ICQ = 50 mA f1 = 28.000 MHz f2 = 28.001 MHz
11.8
35
13.8
-30
dB
%
dBc
NPN SILICON RF POWER TRANSISTOR
2SC2290
DESCRIPTION:
The ASI 2SC2290 is a class A silicon NPN
planar transistor, designed for SSB
communications
FEATURES:
• PG = 15 dB min. at 60 W/28.000 MHz
• High linear power output
• IMD = -30 dBc max. at 60 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO 45 V
VCEO 18 V
VEBO 4.0 V
PDISS 175 W @ TC = 25 °C
TJ -65 °C to +175 °C
TSTG -65 °C to +175 °C
θJC 0.86 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18. 28
.125 / 3.18
.245 / 6.22
.970 / 24. 64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24. 89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
E
C
B
E
