CY7C271 CY7C274 32K x 8 PROM Power- Switched and Reprogrammable Features e CMOS for optimum speed/power e@ Windowed for reprogrammability e High speed 30 ns (commercial) 35 ns (military) Low power 660 mW (commercial) 715 mW (military) Super low standby power Less than 165 mW when deselected EPROM technology 100% programmable e Slim 300-mil package (7C271) Direct replacement for bipolar PROMs e Capable of withstanding >2001V static discharge Functional Description The CY7C271 and CY7C274 are high- performance 32,768-word by 8-bit CMOS PROMs. When disabled (CE HIGH), the 7C271/7C274 automatically powers down into a low-power stand-by mode. The CY7C271 is packaged in the 300-mil slim package. The CY7C274 is packaged in the industry standard 600-mil package. Both the 7C271 and 7C274 are available in a cerDIP package equipped with an erasure window to provide for reprogram- mability. When exposed to UV light, the PROM is erased and can be repro- grammed. The memory cells utilize prov- en EPROM floating gate technology and byte-wide intelligent programming algo- rithms. The CY7C271 and CY7C274 offer the ad- vantage of lower power, superior perform- ance, and programming yield. The EPROM cell requires only 12.5V for the super volt- age, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guar- antee that after customer programming, the product will meet DC and AC specifi- cation limits. Reading the 7C271 is accomplished by placing active LOW signals on CS; and CE, and an active HIGH on CS2. Reading the 7C274 is accomplished by placing ac- tive LOW signals on OF and CE. The contents of the memory location ad- dressed by the address lines (Ag Aj4q) will become available on the output lines (Op Ov). Logic Block Diagram 256 x 1024 PROGRAMABLE ARRAY CE (70271) CS, (7C271) CSp (70274) DE POWER-DOWN Pin Configurations 07 06 Os O%4 02 LCC/PLCC (Opaque Only) DIP/Flatpack DIP/Flatpack 281 Vcc Voc 2710 Ato Ana 260 An Aig 2510 Are Aa Aig Ag 2300 Arg An 2210 5, OE 2117] CS. Axa 20} TE ce 199) 0, 07 18[] Og Os 17P) Os Os 16D) 0,4 Og 15[) 03 03 c271-2 C271-4 LCC/PLCC (Opaque Only) - na, Q0 QB2F egiy S22 hy OF 200 mA not tested.) UV Exposure .0..0. 0.00.00 ccceeee eee ees 7258 Wsec/em2 Storage Temperature ................. 65C to +150C : Ambient Temperature with Operating Range Power Applied .................0.00. ~ 55C to +125C Ambient Supply Voltage to Ground Potential ....... 0.5V to +7.0V Range Temperature Yee DC Voltage Applied to Outputs Commercial OC to +70C SV 10% in High Z State ........ eee 0.5V to +7.0V Industriail!] ~40C to +85C 5V +10% DC Input Voltage ......0 000... ....00008 3.0V to +7.0V Military(2] 55C to +125C SV +10% DC Program Voltage ........... 00. e cece eee ceeees 13.0V Static Discharge Voltage ................0.0.0 008 >2001V (per MIL-STD-883, Method 3015) Electrical Characteristics Over the Operating Rangel) 7C271 30, 35, 45, 55 7C27430, 35, 45, 55 Parameter Description Test Conditions Min. Max. Unit Vou Output HIGH Voltage Vcc = Min., Iop = 2.0mA 2.4 v VoL Output LOW Voltage Vcc = Min., Io, = 8.0 mAl4] 0.4 Vv Vin Input HIGH Level Guaranteed Input Logical HIGH Voltage for 2.0 Vec Vv All Inputs VIL Input LOW Level Guaranteed Input Logical LOW Voltage for All 0.8 v Inputs Tix Input Current GND < Vin < Vcc -10 +10 pA loz Output Leakage Current GND < Vout < Vcc, Output Disabled -40 +40 pA Tog Output Short Circuit Currentl] | Voc = Max., Vour = GND 20 -90 mA Icc Power Supply Current Voc = Max., Vin = 2.09, Commercial 120 mA Jour = OmA, CE=Vip Military 130 Isp Standby Supply Current Vcc = Max., CE = Vy, Commercial 30 mA I =OmA our =0 Military 40 Vpp Programming Supply Voltage 12 13 v Ipp Programming Supply Current 50 mA Vinp Input HIGH Programming 3.0 Vv Voltage Vite Input LOW Programming 0.4 Vv Voltage Capacitancel| Parameter Description Test Conditions Max. Unit Cin Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout Output Capacitance Vec = 5.0V To pF Notes: 1. Contact a Cypress representative for information on industrial tem- perature range specifications. 2. Tx is the instant on case temperature. 3. See the last page of this specification for Group A subgroup testing in- formation. 4. 6.0 mA military 5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 6. See Introduction to CMOS PROMs in this Data Book for general in- formation on testing. 3-112 CYPRESS B SMICONDUCTOR CY7C271 CY7C274 AC Test Loads and Waveforms! R1 5002 R1 500Q 658 MIL 658 MIL 5V 5V ow ALL INPUT PULSES oT rn 3.0V 30 pF R2 339Q 5 pF R2 3332 GND L I (4032 MIL) I j (ose MIL) <5ns > INCLUDING = . 6] 7C271-30 | 7C271-35 | 7C27145 | 7C271-55 7C27430 | 7C274-35 | 7C27445 | 7C274-55 Parameter Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Unit taa Address to Output Valid 30 35 45 55 ns tuzcs Chip Select Inactive to High Z (CS, and CS2, 7C271 20 25 30 30 ns Only) tacs Chip Select Active to Output Valid (CS; and CS3, 20 25 30 30 ns 7C271 Only) tHz0E Output Enable Inactive to High Z (OE, 7C274 Only) 20 20 25 25 ns tog Output Enable Active to Output Valid (OE, 7C274 20 20 25 25 ns Only) tHZCE Chip Enable Inactive to High Z (CE Only) 35 40 50 60 ns tacg Chip Enable Active to Output Valid (CE Only) 35 40 50 60 ns tpu Chip Enable Active to Power Up 0 0 0 0 ns tpp Chip Enable Inactive to Power Down 35 40 50 60 ns tou Output Hold from Address Change 0 0 0 0 ns Switching Waveform tep tpy POWER-DOWN CONTROLLED BY CE Voc SUPPLY 50% 50% CURRENT Ao - Ai \ ADDRESS K cs \ OE, CE, 0S, A x x * tan (tuzoe) tou Ie tHzcse) - N Oo 07 PREVIOUS DATA VALID Kx DATA VALID 271-9 Note: 7. CSgand CS, are used on the 7C271 only. OE is used on the 7C274 only. 3-113WF ns = SEMICONDUCTOR CY7C271 CY7C274 Erasure Characteristics Wavelengths of light less than 4000 angstroms begin to erase the 7C271 and 7C274 in the windowed package. For this reason, an opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wave- length of 2537 angstroms for a minimum dose (UV intensity x exposure time) of 25 Wsec/cm?. For an ultraviolet lamp with a 12 mW/cm? power rating, the exposure time would be approximately 35 minutes. The 7C271 or 7C274 needs to be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm? is the recommended maximum dosage. Programming Modes Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed program- ming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. Table 1. CY7C271 Mode Selection Pin Functionl] Read or Output Disable | A14 Ao CE CS cs; O07 - Oo Mode Other A14 Ag VFY PGM Vpp D7 Do Read Ara Ag Vit Vin Vit O7 - Oo Power Down Aj4 Ag Vin x x High Z Output Disable Aya Ag Vit x High Z Output Disable Ai4 Ag xX Vin High Z Program Ata Ao Vip VILP Vpp D7 Do Program Verify Aig Ao VILP Vine/Vitp Vpp 07 Oo Program Inhibit Aig Ao Vinp VInP Vpp High Z Blank Check Aig Ao VILP Vinp/VILP Vpp O7 ~ Oo Table 2. CY7C274 Mode Selection Pin Function|] Read or Output Disable | Aj4 Ag OE CE Vpp 07 - Oo Mode | Other Aia Ao VFY PGM Vpp D7 Do Read Ay4 Ag Vit VIL Note 9 07 - Oo Output Disable A14 Ao Vin xX xX High Z Power Down Ay4 Ag Vin x High Z Program Aya Ao Vinp VILP Vpp D7 Do Program Verify Aa Ag Vitp Vinp/Vite Vpp O07 - Oo Program Inhibit Aig Ag Vinge Vie Vpp High Z Blank Check Aig Ag Vitp Vinp/VILp Vpp O7- Oo Notes: 8 Xcan be Vy (Vycp) or Vig (Vinp). 9. Vpp should be tied to Voc +5% in read mode. 3-114- CY7C271 icc CY7C274 SEMICONDUCTOR 271-11 271-10 LCC Top View c271-13 271-12 Figure 1. Programming Pinouts 3-115 PROMsCY7C271 CY7C274 =) CYPRESS = SEMICONDUCTOR Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE ys. SUPPLY VOLTAGE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.6 1.2 1.2 s A = 2 14 = ,! 8 B44 Q 1.0 a a Ww N 1.2 uw oO Zz S 1.0 2 08 = <- a 10 P = a oO x N 2 2 o9 z 08 Ta = 25C = 0. NJ] Z 06 : = x f = fax oO Ta = 25C 06 | 0.8 = 04 | 4.0 45 5.0 .5 6.0 5 25 125 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME OUTPUT SOURCE CURRENT TYPICAL ACCESS TIME CHANGE ys. TEMPERATURE _ .vs. VOLTAGE vs. OUTPUT LOADING 1.6 zt 40 w 2 b a 14 a 2 5 o 30 a Ww Cc Q 2 = | OQ 1.2 o s J 5 5 3 w S11 = a 2 49 z og 5 iv Veg = 4.5V S a Ta = 25C 4 5 0.6 Oo 0 0 | | 55 25 125 0 1.0 2.0 3.0 4.0 0 200 400 600 800 1000 AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) CAPACITANCE (pF} OUTPUT SINK CURRENT NORMALIZED SUPPLY CURRENT ys. OUTPUT VOLTAGE ys. CYCLE PERIOD ze 175 1.1 150 5 1.0 w 125 g \ 5 a 2 100 G 09 \ x N Z 75 z 08 N eC Voc = 5.0V z N\ 5 50 Ty = 25C 6 5 = 07 PS 2 3 ~~ 0 06 0.0 1.0 2.0 3.0 4.0 0 50 100 6150 200 250 OUTPUT VOLTAGE (V) CYCLE PERIOD (ns) 271-14 3-116a-_ CY7C271 5 Foes CY70274 & SEMICONDUCTOR Ordering Information!" Speed Package Operating (ns) Ordering Code Name Package Type Range 30 CY7C27130JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27130PC P21 28-Lead (300-Mil) Molded DIP CY7C271~30WC W22 28-Lead (300-Mil) Windowed CerDIP 35 CY7C27135IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C271-35PC P21 28-Lead (300-Mil) Molded DIP CY7C27135WC W22 28-Lead (300-Mil)} Windowed CerDIP CY7C271-35DMB D22 28-Lead (300-Mil) CerDIP Military CY7C271-35KMB K74 28-Lead Rectangular Cerpack CY7C271-35LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C271-35QMB Q55 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C27135WMB W22 28-Lead (300-Mil) Windowed CerDIP 45 CY7C27145IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27145PC P21 28-Lead (300-Mil) Molded DIP CY7C271 45WC W22 28-Lead (300-Mil) Windowed CerDIP CY7C27145DMB D22 28-Lead (300-Mil) CerDIP Military CY7C271-45KMB K74 28-Lead Rectangular Cerpack CY7C27145LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C271--45QMB Q55 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C27145TMB T74 28-Lead Windowed Cerpack CY7C27145WMB W22 28-Lead (300-Mil) Windowed CerDIP 55 CY7C271 55IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27155PC P21 28-Lead (300-Mil) Molded DIP CY7C271-55WC W22 28-Lead (300-Mil) Windowed CerDIP CY7C271-55DMB D22 28-Lead (300-Mil) CerDIP Military CY7C271SSKMB K74 28-Lead Rectangular Cerpack CY7C271 SSLMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C271-55QMB QS5 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C271-55STMB T74 28-Lead Windowed Cerpack CY7C271-55WMB W22 28-Lead (300-Mil) Windowed CerDIP Note: 10. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product avail- ability, 3-117CY7C271 Fes CY7C274 SEMICONDUCTOR Ordering Information! (continued) Speed Package Operating (ns) Ordering Code Name Package Type Range 30 CY7C27430IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27430PC P15 28-Lead (600-Mil) Molded DIP CY7C27430WC Wi16 28-Lead (600-Mil) Windowed CerDIP 35 CY7C27435IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27435PC P15 28-Lead (600-Mil) Molded DIP CY7C27435WC Wi16 28-Lead (600-Mil) Windowed CerDIP CY7C27435DMB D16 28-Lead (600-Mil) CerDIP Military CY7C274-35KMB K74 28-Lead Rectangular Cerpack CY7C27435LMB 155 32-Pin Rectangular Leadless Chip Carrier CY7C27435QMB QSS 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C27435TMB T74 28-Lead Windowed Cerpack CY7C27435WMB Wi6 28-Lead (600-Mil) Windowed CerDIP 45 CY7C27445JC 365 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27445PC P15 28-Lead (600-Mil) Molded DIP CY7C27445WC W16 28-Lead (600-Mil) Windowed CerDIP CY7C27445DMB D16 28-Lead (600-Mil) CerDIP Military CY7C27445KMB K74 28-Lead Rectangular Cerpack CY7C27445LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C27445QMB Q55 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C27445TMB 174 28-Lead Windowed Cerpack CY7C27445WMB Wi6 28-Lead (600-Mil) Windowed CerDIP 55 CY7C27455IC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C27455PC P1S 28-Lead (600-Mil} Molded DIP CY7C27455WC Wi16 28-Lead (600-Mil) Windowed CerDIP CY7C274-55DMB D16 28-Lead (600-Mil) CerDIP Military CY7C27455KMB K74 28-Lead Rectangular Cerpack CY7C2745SLMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C274-55QMB Q55 32-Pin Windowed Rectangular Leadless Chip Carrier CY7C27455TMB T74 28-Lead Windowed Cerpack CY7C27455WMB W16 28-Lead (600-Mil} Windowed CerDIP 3-118CY7C271 9 Fics CY7C274 #& SEMICONDUCTOR MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter Subgroups Vou 1,2,3 VoL 1, 2,3 Vin 1, 2,3 Vit 1, 2,3 Ix 1,2,3 loz 1, 2,3 Icc 1, 2,3 Isp 1, 2,3 Switching Characteristics Parameter Subgroups taa 7, 8,9, 10, 11 tacs HY) 7, 8,9, 10, 11 togl!4] 7, 8,9, 10, 11 CACE 7, 8,9, 10, 11 Notes: 11. 70274 and 7C271 (CS2, CS3 and CS, only). 12. 7C271 only. SMD Cross Reference SMD Cypress Number Suffix Number 5962-89817 OIXX = | CY7C271-55WMB 5962-89817 O1YX =| CY7C271-55TMB 5962-89817 O1ZX =| CY7C271-55QMB 5962-89817 02XX | CY7C271-45WMB 5962-89817 02YX = | CY7C27145TMB 5962-89817 02ZX =| CY7C27145QMB Document #: 3800068-G 3-119 PROMs |