Product Data Sheet 32 dBm Ku-Band Amplifier TGA2503-SM Key Features * * * * * * Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA (Id = 1200mA under RF drive) Package Dimensions: 4.0 x 4.0 x 0.9 mm * Primary Applications * * Ku-Band VSAT Point-to-Point Radio Product Description The TGA2503-SM typically provides 32 dBm of saturated output power with small signal gain of 32 dB. Evaluation Boards are available upon request. Lead-free and RoHS compliant 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 Gain Output Input 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) 34 Saturated Output Power (dBm) The TGA2503-SM is ideally suited for the VSAT ground terminal market and Pointto-Point Radio. 36 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 12.5 Return Loss (dB) Gain (dB) The TriQuint TGA2503-SM is a Ku-Band Packaged Power Amplifier. The TGA2503-SM operates from 12.5-16 GHz and is designed using TriQuint's proven standard 0.5-um power pHEMT production process. Measured Performance Bias Conditions: Vd = 6 V, Idq = 600 mA 32 30 28 26 24 22 20 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Datasheet is subject to change without notice. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 1 Product Data Sheet TGA2503-SM Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Parameter Value Notes Drain to Gate Voltage 13 V Vd Drain Voltage 8V Vg Gate Voltage Range -5 to 0 V Id Drain Current 1300 mA Ig Gate Current Range Pin Tchannel 2/ 2/ -18 to 18 mA Input Continuous Wave Power 21 dBm Channel Temperature 200 C 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter Value Vd Drain Voltage 6V Idq Drain Current 600 mA Drain Current under RF Drive 1200 mA Id_Drive Vg Gate Voltage -0.6 V TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 2 Product Data Sheet TGA2503-SM TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) Bias Conditions: Vd = 6V, Idq = 600mA SYMBOL Gain IRL ORL PARAMETER Small Signal Gain Input Return Loss Output Return Loss TEST CONDITION NOMINAL * UNITS f = 12.5 - 16 GHz 32 dB f = 12.5 - 16 GHz 10 dB f = 12.5 - 16 GHz 8 dB NF Noise Figure f = 12.5 - 16 GHz 9 dB Psat Saturated Output Power f = 12.5 - 16 GHz f = 13.75 - 14.5 GHz 31 32 dBm TOI Third Order Intercept @ Pin = -20dBm f = 12.5 - 16 GHz 36 dBm * Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 3 Product Data Sheet TGA2503-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 85 C Pd = 9.8 W Tchannel = 200 C Thermal Resistance, jc Vd = 6 V Id = 600 mA Pd = 3.6 W Tbaseplate = 85 C jc = 11.7 (C/W) Tchannel = 127 C Tm = 7.9E+6 Hrs Thermal Resistance, jc Under RF Drive Vd = 6 V Id = 1200 mA Pout = 31.8 dBm Pd = 5.7 W Tbaseplate = 85 C jc = 11.7 (C/W) Tchannel = 152 C Tm = 8.6E+5 Hrs Mounting Temperature 30 Seconds 260 C Storage Temperature -65 to 150 C Median Lifetime (Tm) vs. Channel Temperature 1.E+13 Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature ( C) TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 4 Product Data Sheet TGA2503-SM Measured Performance* 36 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 Gain Output Input 11 12 13 14 15 16 17 Return Loss (dB) Gain (dB) Bias Conditions: Vd = 6 V, Idq =600 mA 18 Frequency (GHz) 14 Noise Figure (dB) 13 12 11 10 9 8 7 6 12 13 14 15 16 17 18 Frequency (GHz) * Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 5 Product Data Sheet TGA2503-SM Measured Performance Bias Conditions: Vd = 6 V, Idq =600 mA 40 36 32 Gain (dB) 28 24 20 16 12 -40C 25C 70C 8 4 0 11 12 13 14 15 16 17 18 Frequency (GHz) 0 Input Return Loss (dB) -3 -6 Output Return Loss (dB) -40C 25C 70C -9 -12 -15 -18 -21 -24 -27 -30 11 12 13 14 15 16 17 18 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -40C 25C 70C 11 Frequency (GHz) 12 13 14 15 16 17 18 Frequency (GHz) * Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 6 Product Data Sheet TGA2503-SM Measured Performance Bias Conditions: Vd = 6 V, Idq = 600 mA 1400 1300 30 25 1200 Gain Pout 1100 20 1000 Id 15 900 800 10 700 @ 14 GHz 5 Drain Current (mA) Pout (dBm) & Gain (dB) 35 600 0 500 -16 -12 -8 -4 0 4 Input Power (dBm) 8 12 16 Saturated Output Power (dBm) 34 32 30 28 26 24 22 20 12 13 14 15 16 17 18 Frequency (GHz) * Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 7 Product Data Sheet TGA2503-SM Measured Performance Bias Conditions: Vd = 6 V, Idq =600 mA Output TOI (dBm) @ Pin/tone= -20dBm 38 36 34 32 30 28 26 24 22 20 12 13 14 15 16 17 18 IM3 (dBm) Frequency (GHz) 18 12 6 0 -6 -12 -18 -24 -30 -36 -42 -48 -54 -60 6 8 10 12 14 16 18 20 22 24 26 28 30 Output Power/tone (dBm) 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz * Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 8 Product Data Sheet TGA2503-SM Package Pinout Diagram 19 2503 Date Code 20 21 23 24 18 1 17 2 16 Lot Code 22 3 25 15 4 14 5 13 6 12 11 Top View 10 9 8 7 Bottom View Dot indicates Pin 1 Parts manufactured after date code 0637 will use the marking plan shown. Parts manufactured prior to this date use the marking plan shown in the prior revision of this data sheet (May 2006) Pin Description 1, 2, 4, 5, 6, 7, 9, 11, 13, 14, 15, 17, 18, 20, 22, 24 N/C 3 RF Input 8 Vg1 10 Vg2 12 Power Ref 16 RF Output 19 Vd2 21 Vd1 23 Ref 25 Gnd TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 9 Product Data Sheet TGA2503-SM Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 10 Product Data Sheet TGA2503-SM Recommended Board Layout Assembly * 4700 pF Vd = 6V 100 pF 0 3 18 26 43 Tuning Stub 54 29 0 100 pF 4700 pF Vg = ~-0.6V to obtain 600mA drain current 0 3 18 26 43 Tu 54 29 0 Units: mils * This layout shows the tuning configuration used to obtain the measured data. The layout configuration may vary depending on the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 11 Product Data Sheet TGA2503-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA2503-SM QFN 24L 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Nov 2008 (c) Rev - 12