MICROSEMI CORP/ MICRO MICR UALITY SEMICONDUCTOR, INC SBE D MM 6115907 0001459 774 MMOL TT 23-05 High Voltage Full Wave Bridge Rectifiers 1.5, 2, 4, 6, 8, and 10 KV Vary Ratings Fast Recovery Platinum Doped High Purity Epoxy Encapsulation Avalanche Grade Junctions LTR. INCHES MILLIMETERS A 1.85 46,99 F B 925 23,50 Cc 187 Dia, 4,75 Dia. | D 625 Dia. 15,88 Dia. NEG. E -189 4,80 a F 75 19,05 |. G 35 8,89 +4 H -032 813 4 | -250 6,35 7+? inch Tolerances + .005 AC POS. Terminals are .25 6,35mm Faston or Equivalent MAXIMUM RATINGS (At T, = 25C unless otherwise noted) RATINGS SYMBOL H1645 | Hi646 | H1647 | H1648 | H1649 | H1650 UNITS Repetitive Peak Reverse Voltage Van 1.50 2.00 4.00 6.00 8.00 10.00 kV RMS Reverse Voltage Veages) 1.0 1.4 2.8 4.2 5.6 7.0 kV Average Forward Current @ T, = 50C (Fig. 1) lo -90 65 45 33 30 .25 Amps Peak Surge Current, V2 cycle at 60 Hz (Non-Rep) lesa 35.00 | 30.00 | 25.00 | 20.00 | 20.00 | 15.00 Amps Storage Temperature Range Tete 30 to + 150 C Ambient Operating Temperature Range Ta 30 to + 125 C ELECTRICAL CHARACTERISTICS (At T, = 25C unless otherwise noted) CHARACTERISTICS SYMBOL H1645 | H1646 | H1647 | H1648 | H1649 | H1650 UNITS Mgoimum \netantaneous Forward Voltage Drop (per diode) Ven 4.00 7.00 40.00 | 16.00 16.00 | 20.00 V = 10m . . . . F . Maximum Reverse Current at Rated Vanu tam 1 pA Maximum Reverse Recovery Time at I; = 50mA, Ip = 100mA, te 250 ns & lan = 25mA (Fig 2) 175MICROSEMI CORP/ MICRO 5bE D MM 6115907 OOOL460 4b ME NaL T T ] o H1645 T~23 = 900 ~O5 = 4 800 | | 11646 es (an 3 700 [<4 me Cz 600 wo = Bs 500 & wn Oo oa ~ < 400 TT BS 2 iw 300 Bo ee g a 200 4+ 8 i 100 +- < 0 20 50 75 100 125 150 AMBIENT TEMPERATURE Ta, (C) FIGURE 1 RECOVERY WAVE FORM FORWARD CONDUCTION +L +50ma g Tre REVERSE RECOVERY TEST CIRCUIT TO HP2I4B 150n teF 352 + le GEN OR OT Faun (s)36 0 ae CURRENT 390n = $ 2w REGULATED > IN PARALLEL TIME > [ ~25mA SWITCHING TO TEXTRONIX 455 SCOPE OR EQUIV, W/ 50 LOAD 720 ALL RESISTORS ARE CARBON COMPOSITION 100mA 4 REVERSE RECOVERY CURRENT FIGURE 2 176