NMLU1210TWG - ON Semiconductor

December, 2011 − Rev. 0

1Publication Order Number:

NMLU1210/D

NMLU1210

Full Bridge Rectifier

Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x

4.0 x 0.5 mm mCool™ Package

Features

•Full−Bridge Rectifier Block

•Up to 3.2 A operation

•Low RDS(on) MOSFET to minimize conduction loss

•Low gate charge MOSFET

•Low VF Schottky diode

•Ultra Low Inductance Package

•This Device uses Halogen−Free Molding Compound

•These are Pb−Free Devices

Applications

•Wireless Charging

•AC−DC Rectification

•Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Input voltage between two MOSFET drain VLL 20 V

Bridge Operating Junction and Storage

Temperature

TJ, TSTG −55 to

125

°C

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL260 °C

Continuous Drain Current

R_JA (Note 1)

TA = 25°CIO2.2 A

TA = 85°C1.16

Power Dissipation

R_JA (Note 1)

TA = 25°CPD1.2 W

TA = 85°C0.47

Continuous Drain Current

R_JA t < 5 s (Note 1)

TA = 25°CIO3.2 A

TA = 85°C1.88

Power Dissipation

R_JA t < 5 s (Note 1)

TA = 25°CPD2.34 W

TA = 85°C0.94

Continuous Drain Current

R_JA (Note 2)

TA = 25°CIO1.16 A

TA = 85°C0.6

Power Dissipation

R_JA (Note 2)

TA = 25°CPD0.47 W

TA = 85°C0.185

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size

of 30 mm2, 2 oz. Cu.

Device Package Shipping†

ORDERING INFORMATION

UDFN

CASE 517BS

http://onsemi.com

20 V

17 mW @ 10 V

23 mW @ 4.5 V

0.45 V

RDS(on) TYP

3.2 A

ID MAXV(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

RECTIFIER

MARKING DIAGRAM

PIN CONNECTIONS

NMLU1210TWG UDFN

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Vout

L1_1

L1_2

Vout

L1_1

GND1

Vout

L1_2

GND2

(Top View)

4.0 4.0 mm mCool Pin Connections

(Top View)

1210

AYWWG

1210 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(*Note: Microdot may be in either location)

NMLU1210

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THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3) RθJA 82.5 °C/W

Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 42.5

Junction−to−Ambient – Steady State min Pad (Note 4) RθJA 209

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.

BRIDGE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

ON CHARACTERISTICS

Rectifying Forward Voltage (Note 5) Vfd2 Input voltage VLL = ±5 V;

The output current of Rectifier Iout = 2 A

0.45 .56 V

Rectifier leakage current Ileak Input voltage VLL = 16 V;

No Load on the Rectifier output

31 1000 uA

Rectifier Reverse leakage current Irleak Input voltage VLL = 0 V;

The output voltage of the Rectifier

Vout = 5 V

21 1000 uA

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 2.2 V

Negative Threshold Temperature

Coefficient

VGS(TH) /

TJ4 mV/°C

Drain−to−Source On Resistance

(Note 6) RDS(on)

VGS = 10 V, ID = 3.2 A 17 26

VGS = 4.5 V, ID = 3.2 A 23 32

Forward Transconductance gFS VDS = 10 V, ID = 2.0 A 3.5 S

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage (Note 6) VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.79 V

TJ = 125°C 0.65

6. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

Maximum Instantaneous Forward

Voltage (Note 7)

VFIF = 1.0 A 0.36 V

IF = 2.0 A 0.41

Maximum Instantaneous Reverse

Current

IRVR = 20 V 0.04 mA

7. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 100°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

Maximum Instantaneous Forward

Voltage (Note 8) VF

IF = 1.0 A 0.29 V

IF = 2.0 A 0.36

Maximum Instantaneous Reverse

Current

IRVR = 20 V 4 mA

8. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G.

The test on each individual die is limited to the system package.

NMLU1210

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Figure 1. Typical Application Circuit

GND1 and GND2 are not internally connected. The user should make the connection in the PCB design.

NMLU1210

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Figure 2. Bridge Typical Forward Voltage Drop

at Vin . 5 V

, INSTANTANEOUS FORWARD VOLTAGE (V)

, INSTANTANEOUS FORWARD

CURRENT (A)

25°C

125°C

−55°C

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Figure 3. Bridge Maximum Forward Voltage

Drop at Vin . 5 V

, INSTANTANEOUS FORWARD VOLTAGE (V)

, INSTANTANEOUS FORWARD

CURRENT (A)

25°C

125°C

−55°C

10k

25 35 45 55 65 75 85

Figure 4. Output Leakage at 5 V Bias vs.

Junction Temperature

TJ, TEMPERATURE JUNCTION (°C)

OUTPUT LEAKAGE (mA)

95 105 115 125

Maximum

Typical

100

0.1

0.01 25 35 45 55 65 75 85

Figure 5. Input Leakage at 16 V vs. Junction

Temperature

TJ, TEMPERATURE JUNCTION (°C)

ILEAK, OUTPUT LEAKAGE (mA)

95 105 115 125

Maximum

Typical

Figure 6. FET Typical On−Resistance vs.

Gate−to−Source Voltage ( from 3 V to 10 V)

ID = 2 A

TJ = 25°C

700

600

500

400

300

200

100

02.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VGS (V)

RDS(on) (mW)

100

0.1

0.01

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

Figure 7. FET Typical On−Resistance vs.

Gate−to−Source Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on) (mW)

ID = 2 A

TJ = 25°C

NMLU1210

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Figure 8. Schottky Typical Forward Current vs.

Forward Voltage

, INSTANTANEOUS FORWARD VOLTAGE (V)

, INSTANTANEOUS FORWARD

CURRENT (A)

25°C

125°C

−55°C

0 5 10 15 20 25

Figure 9. Schottky Typical Reverse Current vs.

Reverse Voltage

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

IR, INSTANTANEOUS REVERSE

CURRENT (mA)

125°C

25°C

100

1.0

0.1

0.01

0.001

NMLU1210

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PACKAGE DIMENSIONS

ÉÉÉ

UDFN8 4x4, 0.8P

CASE 517BS

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.25MM FROM TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

5. POSITIONAL TOLERANCE APPLIES TO ALL

OF THE EXPOSED PADS.

DIM MIN MAX

MILLIMETERS

A0.45 0.55

A1 0.00 0.05

A3 0.13 REF

b0.20 0.30

D4.00 BSC

D2 2.10 2.30

E4.00 BSC

E2 2.50 2.70

F3.55 BSC

L0.30 0.50

L1 0.00 0.15

C0.15

C0.15 TOP VIEW

SIDE VIEW

BOTTOM VIEW

ÇÇ

(A3)

A1 SEATING

PLANE

C0.08

C0.10

NOTE 3

88X

0.10 C

0.05 C

PIN ONE

REFERENCE

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.60

2.34

2.74

3.69

4.15

0.35

DETAIL A

ALTERNATE

CONSTRUCTIONS

ÉÉ

ÇÇ

ÉÉ

DETAIL B

MOLD CMPDEXPOSED Cu

ALTERNATE

CONSTRUCTIONS

L3 0.13 0.23

DETAIL B

NOTE 4

DETAIL A

DIMENSIONS: MILLIMETERS

PACKAGE

OUTLINE

D3 0.90 1.10

E3 1.00 1.20

e0.80 BSC

RECOMMENDED

1.14

1.24

DETAIL C

1.15

0.80

0.40

DETAIL C

0.10 BC

2X E3

D3 A

0.10 BC

F/2

e/2

NOTE 5

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NMLU1210/D

mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).

LITERATURE FULFILLMENT:

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

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Order Literature: http://www.onsemi.com/orderlit

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Sales Representative