S2381 to S2385, S5139, S8611, S3884, S4315 series
Features
l
Stable operation at low bias
l
High-speed response
l
High sensitivity and low noise
Applications
l
Spatial light transmission
l
Rangefinder
PHOTODIODE
Si APD
Low bias operation, for 800 nm band
1
■ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area *2
size
Effective active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *1
Package
(mm) (mm2) (°C) (°C)
S2381 φ0.2 0.03
S2382 ➀/K
S5139 ➁/L
S8611 ➂/L
φ0.5 0.19
S2383
S2383-10 *3➀/K
TO-18
φ1.0 0.78
S3884 ➃/K φ1.5 1.77
S2384 ➄/K TO-5 φ3.0 7.0
S2385 ➅/K TO-8 φ5.0 19.6
-20 to +85 -55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Breakdown
voltage
VBR
ID=100 µA
Dark
current *4
ID
Spectral
response
range
λ
Peak
*4
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Temp.
coefficient
of
VBR
Cut-off *
4
frequency
fc
RL=50 Ω
Terminal
*4
capacitance
Ct
Excess
Noise
figure *4
x
λ=800 nm
Gain
M
λ=800 nm
Type No.
(nm) (nm) (A/W) (%)
Typ.
(V)
Max.
(V) (V/°C)
Typ.
(nA)
Max.
(nA) (MHz) (pF)
S2381 0.05 0.5 1000 1.5
S2382
S5139
S8611
0.1 1 900 3
S2383
S2383-10 *30.2 2 600 6
S3884 0.5 5 400 10
100
S2384 1 10 120 40 60
S2385
400 to 1000
800 0.5 75 150 200 0.65
330 40 95
0.3
40
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
■ Spectral response ■ Quantum efficiency vs. wavelength
■ Dark current vs. reverse voltage ■ Gain vs. reverse voltage
KAPDB0020EB KAPDB0021EA
KAPDB0016EC KAPDB0017EC
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C, λ=800 nm)
200 400 600 800
1000
40
20
0
50
30
10
M=100
M=50
WAVELENGTH (nm)
QUANTUM EFFICIENCY (%)
60
200 400 600 800 1000
40
20
0
80
100 (Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
S2384
S3884
S2382, S5139,
S8611
S2381
S2383/-10
REVERSE VOLTAGE (V)
DARK CURRENT
0 50 100 150 200
1 pA
100 pA
1 nA
10 nA
10 pA
80 120100 140 160 180
1
10
100
1000
10000
REVERSE VOLTAGE (V)
GAIN
(Typ. λ=800 nm)
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
■ Terminal capacitance vs. reverse voltage ■ Excess noise factor vs. gain
(Typ. Ta=25 ˚C, f=1 MHz)
S2384 S2385
S3884
S2383/-10
S2382
S5139, S8611
S2381
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10 pF
100 pF
1 nF
50 100
1 pF 2000 150
GAIN
EXCESS NOISE FACTOR
110
1
10 (Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz)
100
M
0.5
λ=650 nm M
0.3
λ=800 nm
M
0.2
KAPDB0018EC KAPDB0022EA
2
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
2.54 ± 0.2
CASE
1.2 MAX.
13
4.5 ± 0.2
2.15 ± 0.3
0.45
LEAD
4.65 ± 0.1
5.4 ± 0.2
2.8
KAPDA0010EA
■ ■
■ ■
■ Dimensional outlines (unit: mm)
KAPDA0018EA
13
2.8
3.7 ± 0.2
0.45
LEAD
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CASE
PHOTOSENSITIVE
SURFACE
WINDOW
2.0 MIN.
1.2 MAX.
0.4 MAX.
0.65 ± 0.15
3.75 ± 0.2
4.65 ± 0.1
5.4 ± 0.2
PHOTOSENSITIVE
SURFACE
2.8
1.5 LENS
13
0.45
LEAD
2.54 ± 0.2
CASE
1.2 MAX.
0.4 MAX.
KAPDA0031EA
KAPDA0012EA KAPDA0013ED
(20) 4.2 ± 0.2
2.8
0.45
LEAD
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.08 ± 0.2
CASE
WINDOW
5.9 ± 0.1
0.4 MAX.
1.5 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
INDEX MARK
1.4
(15) 4.9 ± 0.2
3.1
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
CASE
0.5 MAX.
1.0 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
➀ S2381, S2382, S2383/-10 ➁ S5139
➂ S8611
➄ S2384 ➅ S2385
3
KAPDA0011EB
(20) 4.7 ± 0.2
2.8
PHOTOSENSITIVE
SURFACE
5.08 ± 0.2
CASE
0.4 MAX.
1.5 MAX.
0.45
LEAD
WINDOW
3.0 MIN.
9.1 ± 0.2
8.2 ± 0.1
➃ S3884
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believ ed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions .
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentativ e specifications or a suffix "(Z)"
which means dev elopmental specifications. ©2010 Hamamatsu Photonics K.K.
Si APD
S4315 series
Cat. No. KAPD1007E09
May 2010 DN
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 ± 0.2
14 ± 0.2
15.3 ± 0.2
1.9 ± 0.2
6.4 ± 0.212 MIN.
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
PHOTOSENSITIVE
SURFACE
KAPDA0020EB
■ ■
■ ■
■ Dimensional outline (unit: mm)
TE-cooled type APD S4315 series
4
■ Cooling characteristic of TE-cooler
KAPDB0098EA
20
0 0.4 0.8 1.2 1.6
CURRENT (A)
ELEMENT TEMPERATURE (˚C)
0
-40
-60
-20
40
(Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W)
■ Current vs. voltage characteristic of TE-cooler
KAPDB0100EA
1.2
VOLTAGE (V)
CURRENT (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
0.4
0.2
0 0.4 0.80.2 0.6 1.0 1.2
■ Thermistor temperature characteristic
KIRDB0116EA
ELEMENT TEMPERATURE (˚C)
RESISTANCE (Ω)
103
(Typ.)
104
105
106
-40 -20 0 20
Parameter Symbol Condition S4315 S4315-01 S4315-02 S4315-04 Unit
APD - S2381 S2382 S2383 S2384 -
Effective active area *5 - φ0.2 φ0.5 φ1.0 φ3.0 mm
Spectral response range λ 400 to 1000 nm
M=60 - 800
Peak sensitivity wavelength λp M=100 800 - nm
Cooling temperature ∆T 35 °C
Package - TO-8 -
*5: Active area in which a typical gain can be obtained.
We welcome
y
our re
q
uest for active areas different from those listed above.
