ALD114804APC - Advanced Linear Devices

EPAD

ADVANCED

LINEAR

DEVICES, INC.

ORDERING INFORMATION

*N/C pins are internally connected.

Connect to V- to reduce noise

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

VGS(th)= -0.4V

ALD114804/ALD114804A/ALD114904/ALD114904A

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

MATCHED PAIR MOSFET ARRAY

GENERAL DESCRIPTION

ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-

Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS

technology. These devices are intended for low voltage, small signal applica-

tions. They are excellent functional replacements for normally-closed relay appli-

cations, as they are normally on (conducting) without any power applied, but

could be turned off or modulated when system power supply is turned on. These

MOSFETS have the unique characteristics of, when the gate is grounded, oper-

ating in the resistance mode for low drain voltage levels and in the current source

mode for higher voltage levels and providing a constant drain current.

ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for

exceptional device electrical characteristics matching. As these devices are on

the same monolithic chip, they also exhibit excellent temperature tracking char-

acteristics. They are versatile as design components for a broad range of analog

applications, such as basic building blocks for current sources, differential ampli-

fier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual MOSFET also

exhibits well controlled parameters, enabling the user to depend on tight design

limits corresponding to well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are suitable for switching and amplifying applica-

tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems

where low input bias current, low input capacitance and fast switching speed are

desired. These devices exhibit well controlled turn-off and sub-threshold

charactersitics and therefore can be used in designs that depend on sub-thresh-

old characteristics.

The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in

precision applications which require very high current gain, beta, such as current

mirrors and current sources. A sample calculation of the DC current gain at a

drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is

recommended that the user, for most applications, connect V+ pin to the most

positive voltage potential (or left open unused) and V- and N/C pins to the most

negative voltage potential in the system. All other pins must have voltages within

these voltage limits.

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -0.4V +/- 0.02V

• Nominal RDS(ON) @VGS=0.0V of 5.4KΩ

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin 16-Pin 8-Pin 8-Pin

Plastic Dip SOIC Plastic Dip SOIC

Package Package Package Package

ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA

ALD114804 PC ALD114804SC ALD114904PA ALD114904SA

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage (<0.2V) analog and

digital circuits

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators

N/C*

314

413

512

N/C*

GN1

DN1

N/C*

DN4

N/C*

GN4

GN3

DN3

DN2

GN2

S34

S12

ALD114804

M 4 M 3

M 1 M 2

V-

N/C*

ALD114904

M 1 M 2

V-

N/C*

V-

www.aldinc.com

* Contact factory for industrial temp. range or user-specified threshold voltage values

FEATURES

ALD114804/ALD114804A/ALD114904/ALD114904A Advanced Linear Devices 2

Notes: 1 Consists of junction leakage currents

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS 10.6V

Gate-Source voltage, VGS 10.6V

Power dissipation 500 mW

Operating temperature range PA, SA, PC, SC package 0°C to +70°C

Storage temperature range -65°C to +150°C

Lead temperature, 10 seconds +260°C

ALD114808A / ALD114908A ALD110848 / ALD114908

Parameter Symbol Min Typ Max Min Typ Max Unit Test Condition

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Gate Threshold Voltage VGS(th) -0.42 -0.40 -0.38 -0.44 -0.40 -0.36 V IDS =1µA

VDS = 0.1V

Offset Voltage VOS 25 720mVI

DS =1µA

VGS1-VGS2

VGS1-VGS2 Tempco ∆VOS 55µV/ °CV

DS1 = VDS2

GateThreshold Tempco ∆VGS(th) -1.7 -1.7 mV/ °CI

D = 1µA

0.0 0.0 ID = 20µA, VDS = 0.1V

+1.6 +1.6 ID = 40µA

On Drain Current IDS (ON) 12.0 12.0 mA VGS = +9.1V

3.0 3.0 VGS = +3.6V

VDS = +5V

Forward Transconductance GFS 1.4 1.4 mmho VGS =+3.6 V

VDS = +8.6V

Transconductance Mismatch ∆GFS 1.8 1.8 %

Output Conductance GOS 68 68 µmho VGS =+3.6V

VDS = +8.6V

Drain Source On Resistance RDS (ON) 500 500 ΩVDS = 0.1V

VGS = +3.6V

Drain Source On Resistance RDS (ON) 5.4 5.4 KΩVDS = 0.1V

VGS = +0.0V

Drain Source On Resistance ∆RDS (ON) 10 10 %

Tolerance

Drain Source On Resistance ∆RDS (ON) 0.5 0.5 %

Mismatch

Drain Source Breakdown BVDSX 10 10 V IDS = 1.0µA

Voltage VGS = -1.4V

Drain Source Leakage Current1IDS (OFF) 10 100 10 100 pA VGS = -1.4V, VDS =+5V

44nAT

A = 125°C

Gate Leakage Current1IGSS 330 330pAV

DS = 0V VGS = +10V

11nAT

A =125°C

Input Capacitance CISS 2.5 2.5 pF

Transfer Reverse Capacitance CRSS 0.1 0.1 pF

Turn-on Delay Time ton 10 10 ns V+ = 5V RL= 5KΩ

Turn-off Delay Time toff 10 10 ns V+ = 5V RL= 5KΩ

Crosstalk 60 60 dB f = 100KHz