V
RRM
= 20 V - 100 V
I
F
= 120 A
Features
• High Surge Capability
Twin Tow
er Package
• Ty
pes up to 100 V V
RR
M
Parameter
Sy
mbol
MBR12045CT (R)
MBR12060CT (R)
Unit
Repetitive peak reverse
V
45
60
V
Silicon Pow
er
Schottk
y
Diode
Conditions
100
MBR12045CT thru MBR120100CT
R
MBR120100CT (R
)
80
MBR12080CT (R)
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise specif
ied ("R" devices hav
e leads reversed
)
voltage
V
RRM
45
60
V
RMS rev
erse voltage
V
RMS
32
42
V
DC blocking voltage
V
DC
45
60
V
Continuous forward
current
I
F
120
120
A
Operating temperature
T
j
-40 to 175
-40 to 175
°C
Storage temperature
T
stg
-40 to 175
-40 to 175
°C
Parameter
Sy
mbol
MBR12045CT (R
)
MBR12060CT (R)
Unit
Diode forward v
oltage
0.65
0.75
33
200
200
Thermal ch
aracteristics
Thermal resistance,
junction - case
R
thJC
0.8
0.8
°C/W
-40 to 175
-40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
100
70
100
80
-40 to 175
MBR120100CT (R
)
33
MBR12080CT (R)
0.8
V
R
= 20 V, T
j
= 125 °C
0.8
0.84
0.84
200
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤
140 °C
Conditions
80
56
800
800
-40 to 175
120
120
800
200
A
800
Electrical characteristics, at
Tj = 25 °C, unl
ess otherw
ise specified
Surge non-repetitive
forward current, Half
Sine W
ave
I
F,SM
Reverse current
I
R
V
F
www.genesicsemi.com
1
MBR12045CT thru MBR120100CT
R
www.genesicsemi.com
2
Suppliers Inquiry
Previous
Next
Link
Name *
Reason for Contact
General Inquiry
Place Order
Report Issue
Target Price (Option)
Email Address *
Message *
BOM / Attach Files (Option)
Maximum allowed file size is 10MB