V
RRM
= 20 V - 100 V
I
F
= 120 A
Features
• High Surge Capability Twin Tower Package
• Types up to 100 V V
RR
M
Parameter Symbol MBR12045CT (R) MBR12060CT (R) Unit
Repetitive peak reverse
V
45
60
V
Silicon Power
Schottk
y
Diode
Conditions
100
MBR12045CT thru MBR120100CTR
MBR120100CT (R
)
80
MBR12080CT (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
voltage
V
RRM
45
60
V
RMS reverse voltage V
RMS
32 42 V
DC blocking voltage V
DC
45 60 V
Continuous forward
current I
F
120 120 A
Operating temperature T
j
-40 to 175 -40 to 175 °C
Storage temperature T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBR12045CT (R) MBR12060CT (R) Unit
Diode forward voltage 0.65 0.75
33
200 200
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.8 0.8 °C/W
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
100
70
10080
-40 to 175
MBR120100CT (R
)
33
MBR12080CT (R)
0.8
V
R
= 20 V, T
j
= 125 °C
0.8
0.84 0.84
200 mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
80
56
800 800
-40 to 175
120 120
800
200
A800
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half
Sine Wave
I
F,SM
Reverse current I
R
V
F
www.genesicsemi.com 1
MBR12045CT thru MBR120100CTR
www.genesicsemi.com 2
