9338 901 90126 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Oct 16 2004 Nov 05

DISCRETE SEMICONDUCTORS

BC618

NPN Darlington transistor

ook, halfpage

M3D186

2004 Nov 05 2

Philips Semiconductors Product speciﬁcation

NPN Darlington transistor BC618

FEATURES

•Low current (max. 500 mA)

•Low voltage (max. 55 V)

•High DC current gain.

APPLICATIONS

•General purpose low frequency

•Relay drivers.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic

package.

PINNING

PIN DESCRIPTION

1 emitter

2 base

3 collector

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

handbook, halfpage

MAM302

TR2

TR1

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC618 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

2004 Nov 05 3

Philips Semiconductors Product speciﬁcation

NPN Darlington transistor BC618

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −80 V

VCES collector-emitter voltage VBE =0 V −55 V

VEBO emitter-base voltage open collector −12 V

ICcollector current (DC) −500 mA

ICM peak collector current −800 mA

IBbase current (DC) −200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −625 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 200 K/W

2004 Nov 05 4

Philips Semiconductors Product speciﬁcation

NPN Darlington transistor BC618

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 60 V; IE=0 A −−50 nA

ICES collector-emitter cut-off current VBE = 0 V; VCE =60V −−50 µA

IEBO emitter-base cut-off current VEB = 10 V; IC=0 A −−50 nA

hFE DC current gain VCE = 5 V; see Fig.2

IC= 1 mA 2000 −−

IC= 10 mA 4000 −−

IC= 200 mA 10000 −70000

VCEsat collector-emitter saturation voltage IC= 200 mA; IB= 0.2 mA −−1.1 V

VBEsat base-emitter saturation voltage IC= 200 mA; IB= 0.2 mA −−1.6 V

Cccollector capacitance VCB = 30 V; IE=0 A −3.5 −pF

fTtransition frequency VCE =5V; I

C= 500 mA; f = 100 MHz 155 −−MHz

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−11IC (mA)

hFE

10 102 103

Fig.2 DC current gain; typical values.

VCE =2V.

2004 Nov 05 5

Philips Semiconductors Product speciﬁcation

NPN Darlington transistor BC618

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 97-02-28

04-06-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2004 Nov 05 6

Philips Semiconductors Product speciﬁcation

NPN Darlington transistor BC618

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no license or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

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Printed in The Netherlands R75/05/pp7 Date of release: 2004 Nov 05 Document order number: 9397 750 13573