THIN FILM CHIP RESISTOR MSMR1 SERIES 0.009" 0.012" MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BONDING P ADS PADS 0.012" x 0.009" x 0.006" (0.001") (S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 A MINIMUM GOLD 10,000 A MINIMUM: ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL BACKSIDE SURF ACE SURFACE CHIP RESISTORS 0.006" ELECTRICAL DA TA DAT Layout varies with value RESIST ANCE RANGE RESISTANCE SILICON, QUARTZ, GLASS ALUMINA TOLERANCES NICHROME 2 TO 75K 75K 2 TO 15K 15K 0.01% TO 10% (Value Dependent) ALUM NITRIDE TANT ANTALUM 75K 2 TO 75K 2 TO 15K 15K 0.01% TO 10% (Value Dependent) T.C.R. 25ppm/C ST ANDARD STANDARD OPTIONAL TO 5ppm/C (S, Q, G) 150ppm/C ST ANDARD STANDARD OPTIONAL TO 10ppm/C (S, Q, G) OPTIONAL TO 25ppm/C (A) SERIES DA TA DAT 101 TO 250K : -40dB 101 250K 100 , 250K : -30dB 100 250K 400 V MIN.* 10 12 MIN. 100 V MAX. 50 mW (70C DERA TED LINEARL Y TO 150C) P = (E*R) DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25 C, 5 SEC., 0. 0.225% MAX. R/R: 0.1% MSI TYPICAL 03 % MSI TYPICAL 150C, 100 HRS., 0.25% 0.25% MAX. R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. R/R: 0.1% MSI TYPICAL 107F,, 0.25% MIL-STD 202, METHOD 106, 0. 0. 0.55% MAX. R/R: 0. 0.11% MSI TYPICAL 1000 HRS., 70 C, 12 0.5% MAX. R/R: 0.1% MSI TYPICAL 70C, 1255mW mW,, 0.5% -5 -555C TO +125C CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE TAGE OPERA TING VOL VOLT OPERATING POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ 2pF 0.06pF 0.02pF PART NUMBER DESIGNA TION DESIGNATION MSMR1 X X XXXXX X X SERIES SUBSTRA TE SUBSTRATE RESISTIVE FILM OHMIC V ALUE VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. TOLERANCE S = 0.01%* Q = 0.05%* B = 0.1% D = 0.5% F = 1% G = 2% J = 5% K = 10% OPTION TOR DESIGNATOR DESIGNA (If Required) A = 50ppm/C B = 25ppm/C C = 10ppm/C D = 5ppm/C E = Aluminum Bond Pads GB = Gold Backside F = 100ppm/C G = Gold Pads (always used when no other option is required) A= G= Q= S= Alumina Glass Quartz Silicon N = Nichrome T = Tantalum Nitride MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 146-B-0306 EXAMPLE: MSMR 1SN-50R00F-BGB = 0.012" x 0.009", Silicon Substrate, Nichrome Resistor , 1% TTol., ol., 25ppm/C, Gold Backside. Resistor,, 50 50 *Consult Sales for available values