SMD Schottky Barrier Rectifiers COMCHIP SMD DIODE SPECIALIST CDBC320-G Thru CDBC3100-G Reverse Voltage: 20 - 100 Volts Forward Current: 3.0 Amp RoHS Device Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Built-in strain relief Low forward voltage drop Mechanical data Case: JEDEC DO-214AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.21 gram _pl- SMC/DO-214AB 0.124(3.18) | | |o.z45(6.22) 0.108(2.75) |_[0.220(6.59) 0.280(7.11) 0.260(6.60) 0.012(0.31) 1 ,006(0.15) a F} (0.15) 0.103(2.62) 0.079(2.00) v (_ + ! 0.050(1.27 A 0.008(0.20) 0.030(0.76) 0.320(813) 0.0203(0.10) 0.305(7.75) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol | cpsc320-6 | cpac340-6 | coBc360-c | coBc380-G |cpBc3100-G| Unit Max. Repetitive Peak Reverse Voltage] VRRM 20 40 60 80 100 Vv Max. DC Blocking Voltage Vpc 20 40 60 80 100 Max. RMS Voltage VRMS 14 28 42 56 70 Peak Surge Forward Current 8.3ms single half sine-wave IFSM 80 A superimposed on rate load ( JEDEC method ) Max. Average Forward Current lo 3.0 A Max. Instantaneous Forward Current at3.0A VF 0.50 0.75 0.85 Vv Max. DC Reverse Current at Rated DC 0.5 Blocking Voltage Ta=25 IR . . mA Ta=100C 20 10 Max. Thermal Resistance (Note 1) RJA 50 5 c/w RJL 10 Max. Operating Junction Temperature | Tj 125 c Storage Temperature TsTG -65 to +150 c Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 inch? copper pad areas Rev.A QW-BB011 Page 1SMD Schottky Barrier Rectifiers COMCHIP pl- Rating and Characteristic Curves (CDBC320-G Thru CDBC3100-G) Fig. 1- Reverse Characteristics Fig.2 - Forward Characteristics 100 100 =< 10 = 10 E = 2 5 CDBC380-G-3100-G o 1 a 2 o a o = > o Ww oO 0.1 Tj=25C i= Pulse width 300uS T)=25C 4% duty cycle 0.01 0.01 0 20 40 60 80 100 120 140 160 180 200 0103 05 0.7 09 11 13 15 1.7 1.9 214 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3- Junction Capacitance Fig. 4 - Current Derating Curve 700 TOT TET TOT Tit N f =1MHz and applied 4VDC reverse voltage 600 ~ 30 S N < g 500 5 28 c N E 8 NN 5 % 400 N Oo 20 a N 3 a N S 300 N - 15 4 c Ny, S N uw 3 me 200 NI g 10 > N $ 100 N <= 05 0 0 0.01 0.1 1.0 10 100 20 40 60 80 100 120 140 160 Reverse Voltage (V) Ambient Temperature (C) Fig. 5- Non Repetitive Forward Surge Current _. 100 IT Poy TET < 8.3mS Single Half Sine ard Wave JEDEC methode 5 80 5 oO 2 o 60 2 \ e N Tj=25 C o 2 40 \ 0 N x NN @ o MN a2 20 = ms Pell 0 1 5 10 50 100 Reverse Voltage (V) Rev.A QW-BB011 Page 2